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Invited Speakers
| A. Bonanni | Univ. of Linz, Austria | MOVPE of Fe-doped GaN below and above the solubility limit: growth, in-situ characterization |
| H. Hardtdegen | IBN-1 Jülich, Germany | MOVPE growth optimization for AlGaN/GaN-HEMTs |
| M. Kappers | Univ. of Cambridge, UK | Growth of GaN-based quantum well structures: a comparison between polar, semi-polar and non-polar orientations |
| K. Leifer | Uppsala Univ., Sweden | Quantitative transmission electron microscopy for the analysis of interfaces and quantum nano-structures |
| T. Makimoto | NTT Laboratories, Kanagawa, Japan | Deep UV light emitting diodes by MOVPE |
| J.S. Roberts | Univ. of Sheffield, UK | Mid infra-red quantum cascade laser grown by MOVPE |
| K. Volz | Univ. of Marburg, Germany | Recent developments in dilute nitride III/V-semiconductors grown by MOVPE |
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