III-V Semiconductors

Head: Ing. Kuzmík Ján, DrSc.

Deputy Head: Ing. Ťapajna Milan, PhD.;

The research at the department aims technology development, detail characterization, and application of III-V semiconductors for micro- and opto-electronics. The focus is given to quantum- and nano-structures based on InAlN/(In)GaN, AlGaN/GaN, AlGaAs/GaAs, InGaP/GaAs, and InGaP/GaP material systems. The department operates two MOCVD growth systems, one for III-N materials (CCS system), second for the III-As and III-P materials (horizontal system).

Research areas:

Current research focus:

  • Development of processing technology for switching HFETs based on III-N semiconductors featuring high Vth and low ON-state resistance
  • Feasibility study and development of HFETs with InN channel region
  • Development of processing technology towards surface states and gate leakage suppression in III-N and III-V MOS-HFETs
  • Development of compact anti-refractive layers covered by nanowires
  • Study of nanowire early growth phase using different seeding strategies
  • Growth of III-V heterostructures on non-planar substrates
  • Hetero-integration of III-N and III-V devices