Collaborations

Ferdinand-Braun-Institute, Berlin (Dr. J. Würfl)

Normally-off GaN HEMTs for inverters

Inst. of Quantum Electronics and Photonics,
EPFL Lausanne (Prof. N. Grandjean, Dr. J.-F. Carlin)

Technology of InAlN/GaN HEMTs

Research Center for Integrated Quantum Electronics,
Sapporo, Hokkaido University (Prof. T. Hashizume)

Highly safe normally-off GaN HEMTs

Research Center Jülich (Dr. M. Mikulics)

III-V nanostructures

University of Crete (Prof. A. Georgakilas)

InN-channel HEMTs

Epigan NV (Dr. M. Germain)

MOCVD of GaN heterostructures

Institute of Physics AS CR, v.v.i. (Prof. E. Hulicius)

GaN MOCVD

Wroclaw University of Technology, Wroclaw (Prof. M. Tlaczala)

III-V MOCVD

FEEIT STU Bratislava (Prof. A. Šatka)

GaN-based mixed-signal electronics