Detection of ionizing radiation and X-ray crystal optics

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Detection of ionizing radiation

The ionizing radiation passing through the matter demonstrates various physical phenomena, which can be used for detection or measurement of its characteristics. The primary component of measurement set-up of ionizing radiation is detector or sensor. Sensitive part of the sensor is semiconductor material like silicon, galium arsenide, cadmium teluride, indium phospide and others. According to character or ionizing radiation (alphy, beta, X-rays, g-rays and others) and its parameters which we try to detect, it is necessary to match detector parameters (like sensitive area, thickness and others).

Fig.1 a) Photograph of „single“ detector on pad; b) Semiconductor wafer with many pixel senzors for X-ray imaging; c) Example of detected spectrum of alpha particles with different energies using „single“ detector.


Research and development of SiC, DLC, SiN thin film technologies for applications in thin film devices and solar cells

Thin films of silicon carbide (SiC), diamond-like carbon (DLC) and silicon nitride thin films are prepared by plasma techniques such as plasma enhanced chemical vapor deposition deposition (PECVD) dual-mode RF (radio frequency), ECR (electron cyclotron resonance), magnetron sputtering technique and attractive HWCVD- hot wire chemical vapour deposition. The techniques may be prepared quality layer at temperatures below 400 ° C that is required for compatibility with other microelectronic technologies. Prepared thin films are preferably amorphous and nanocrystalline. Individual amorphous and nanocrystalline films are characterized by several structural, electrical and optical methods such as RBS, ERD, XRD, I-V, C-V, PL, UV-Vis. The influence of the electromagnetic and nuclear radiation on the stability of the prepared films and experimental structures are also studied as well as the absorption capacity of silicon carbide thin films for the electromagnetic radiation.


Recent publications:

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Zápražný, Z., Sedlačková, K., Sekáčová, M., Dubecký, F., Skuratov, V.A., Korytár, D., and Nečas, V.: Schottky barrier detectors based on high quality 4H-SIC semiconductor: electrical and detection properties, Applied Surface Sci 461 (2018) 276-280.

Šagátová, A., Zaťko, B., Nečas, V., Dubecký, F., Tu, L.A., Sedlačková, K., Boháček, P., and Zápražný, Z.: From single GaAs detector to sensor for radiation imaging camera, Applied Surface Sci 461 (2018) 3-9.

Sedlačková, K., Zaťko, B., Šagátová, A., Nečas, V., Boháček, P., and Sekáčová, M.: Comparison of semi-insulating GaAs and 4H-SiC-based semiconductor detector covered by LiF film for thermal neutron detection, Applied Surface Sci 461 (2018) 242-248.

Korytár, D., Zápražný, Z., Ferrari, C., Frigeri, C., Jergel, M., Maťko, I., and Kečkeš, M.: Cross-sectional TEM study of subsurface damage in SPDT machining of germanium optics, Applied Optics 57 (2018) 1940-1943.

Šagátová, A., Zaťko, B., Nečas, V., Sedláčková, K., Boháček, P., Fülöp, M., and Pavlovič, M.: Radiation hardness study of semi-insulating GaAs detectors against 5 MeV electrons, J. Instrument. 13 (2018) C01006.

Zaťko, B., Zápražný, Z., Jakůbek, J., Šagátová, A., Boháček, P., Sekáčová, M Korytár, D., Nečas, V., Žemlička, J., Mora, Y., and Pichotka, M.: Imaging performance of Timepix detector based on semi-insulating GaAs, J. Instrument. 13 (2018) C01034.

Zaťko, B., Kubanda, D., Žemlička, J., Šagátová, A., Zápražný, Z., Boháček, P., Nečas, V., Mora, Y., Pichotka, M., and Dudák, J.: First tests of Timepix detectors based on semi-insulating GaAs matrix of different pixel size, J. Instrument. 13 (2018) C02013.

Jergel, M., Halahovets, Yu., Maťko, I., Korytár, D., Zápražný, Z., Hagara, J., Nádaždy, P., Šiffalovič, P., Kečkéš, J., and Majková, E.: Finishing of Ge nanomachined surfaces for X-ray crystal optics, Inter. J. Advanced Manufact. Technol. 96 (2018) 3603–3617.

Hrubčín, L., Gurov, J.B., Zaťko, B., Mitrofanov, S.V. Rozov, S.V., Sedlačková, K., Sandukovskij, V.G. Semin, V.A., Nečas, V., and Skuratov, V.A.: Characteristics of Si and SiC detectors at registration of Xe ions, J. Instrument. 13 (2018) P11005.

Dubecký, F., Kindl, D., Hubík, P., Mičušík, M., Dubecký, M., Boháček, P., Vanko, G., Gombia, E., Nečas, V., and Mudroň, J.: A comparative study of Mg and Pt contacts on semi-insulating GaAs: electrical and XPS characterization, Applied Surface Sci 395 (2017) 131-135.

Šagátová, A., Zaťko, B., Dubecký, F., Ly Anh, T., Nečas, V., Sedlačková, K., Pavlovič, M., and Fulop, M.: Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons, Applied Surface Sci 395 (2017) 66-71.