Projects

International

TRANSCOE – Vývoj nových vodivých priehladných elektród pre organickú elektroniku
Development of new designed transparent conductive electrodes for organic electronics
Program: Bilateral – other
Project leader: Ing. Fröhlich Karol DrSc.
Annotation: Subject of the proposed project is preparation of new transparent conductive electrodes with high transparency and low sheet resistance for organic photovoltaic\’s (OPVs) and organic light emitting diodes (OLEDs). The project will focus on five issues; i) electrode design ii) synthesis of conductive electrodes; iii) fabrication, characterization and optimization of transparent electrodes; iv) fabrication and characterization of OPVs and OLEDs to test the performance of the prepared transparent conductive electrodes; v) encapsulation. We will prepare OPVs and OLEDs with incorporated novel electrode design and test the performances of the devices when the electrode materials will be deposited on glass and/or flexible substrate. Transparent conductive electrodes will be based either on organic Ag-nanowire network -organic multilayered structure or on atomic layer deposited Al-doped ZnO films. The electrodes will be characterized and optimized by measuring the sheet resistance and light transmission. The sheet resistance of the electrode should be adjusted to below 12 Ω and 50 Ω sq−1 for organic and Al-doped ZnO films transparent electrodes, respectively. Finally, OPVs and OLEDs will be encapsulated using atomic layer deposited thin films and their performance will be examined. Proposed project includes two different approaches of transparent conducting electrodes preparation for OPVs and PLEDs. Evaluation of performance of these two types of electrodes presents important and unique output of the project. As a result of the project A step to commercialization of new transparent conductive electrodes, OPVs and OLEDs will be achieved through international collaboration. Funding of the proposed project will create seed for setting up a new research on flexible electronics, Organic Field Effect Transistors (OFETs), Organic Thin Film Transistors (OTFTs), and nanotechnology applications in electronic and photonics for both partners.
Duration: 1.2.2017 – 31.1.2020
HERALD – Zachytenie spoločného európskeho výskumu v nanášaní po atomárnych vrstvách
Hooking together European research in atomic layer deposition
Program: COST
Project leader: Ing. Fröhlich Karol DrSc.
Project webpage: http://www.cost.eu/COST_Actions/mpns/Actions/MP1402
Duration: 4.12.2014 – 4.12.2018
MORGaN – Materiály pre robustný nitrid gália
Materials for Robust Gallium Nitride
Program: FP7
Project leader: Ing. Fröhlich Karol DrSc.
Duration: 1.11.2008 – 31.10.2011
Výskum dielektrických vlastností a prenikanie prúdov vRu/high-k (Ta2O5,(Hf,Ti)-dotované Ta2O5) kondenzátormi pre pokročilé sub-90 nm technológie uzlové aplikácie
Investigation of dielectric properties and leakage currents in Ru/high-(Ta205,(hf,Ti)-doped Ta205)capacitors for advanced sub-90nm technology and applications
Program: Inter-institute agreement
Project leader: Ing. Fröhlich Karol DrSc.
Annotation: no description
Duration: 1.1.2006 – 31.1.2009
ULTRAGAN – Technológia InAlN(In)GaN heteroštruktúr pre mikrovlnný tranzistor s ultra vysokým výkonom
InAlN/(In)GaN heterostructure technology for ultra-high power microwave transistor
Program: FP6
Project leader: Ing. Fröhlich Karol DrSc.
Annotation: Next generation wireless network base stations, satellite communication systems and compact digital radar are just few examples where GaN-based devices can multiply the efficiency of amplifiers. However, improvements in GaN-based High Electron Mobility Transistors (HEMTs) are limited by the physics of already established AlGaN/GaN heterostructure system. ULTRAGAN project is aiming to explore new heterostructures using InAlN/(In)GaN alloys. The objective is to triple the HEMTs power density if compared to the state-of-the-art large periphery AlGaN/GaN HEMTs, InAlN/(In)GaN HEMTs are to demonstrate power densities of 30W/mm at 2 to 12 GHz. These parameters can be achieved primarily because of expected extremely high 2-dimensional electron gas density coupled with polarisation fields in the InAlN/(In)GaN heterojunction. The project gives to Europe an opportunity to come back at the edge of the microwave research, which is right now much stronger in the USA. and Japan. Research teams from pure academia to industrial application laboratories will be combined to secure high efficiency research. Molecular Beam Epitaxy (MBE) and Metallorganic Chemical Vapour Deposition (MOCVD) techniques will be explored to develop devices including InAlN/GaN single heterojunction (SH) and InAlN /(In)GaN/(In,Al)GaN double heterojunction (DH) systems. Better confinement in the DH is a very attractive approach to limit the role of deep electrical levels by reducing electron emission out of the channel. Moreover the chemistry of InAlN surface is expected to be different to GaN or AlGaN and more stable device surface might be discovered. A strong research will be carried out on the device passivation. In this way transistor I-V instabilities such as drain lags might be eliminated. The project also involves physical and thermal simulation, device processing and a full AC/DC HEMT characterization for a thorough device optimization. The Consortium team is composed of scientists from Austria, France, Germany, Greece, Slovakia and Switzerland.
Project webpage: http://www.ultragan.eu/
Duration: 17.10.2005 – 16.10.2008
THIOX – Tenké vrstvy pre nové súčiastky na báze oxidov
Thin films for novel oxide devices
Program: European Science Foundation (ESF)
Project leader: Ing. Fröhlich Karol DrSc.
Annotation: no description
Project webpage: www.esf.org/esf_article.php?language=0&article=322&domain=1&activity=1
Duration: 1.6.2003 – 30.6.2008
Tenké oxidové vrstvy pre využitie v nanoelektronike
Thin oxide films for nanoelectric applications
Program: Inter-academic agreement
Project leader: Ing. Fröhlich Karol DrSc.
Annotation: no description
Duration: 1.1.2006 – 31.12.2007
INVEST – –
Integration of very high-k dielectrics with silicon CMOS technology
Program: FP5
Project leader: Ing. Fröhlich Karol DrSc.
Duration: 1.1.2001 – 31.12.2005
Príprava tenkých vrstiev nanášaním z chemických roztokov
Preparation of barriers, electrodes and oxide films for microelectronics
Program: COST
Project leader: Ing. Fröhlich Karol DrSc.
Annotation: no description
Duration: 1.3.2001 – 1.9.2005
MULTIMETOX – –
Metal oxide multilayers obtained by cost-effective new CVD technologies for magnetoelectronic microsystems and nanotechnologies
Program: FP5
Project leader: Ing. Fröhlich Karol DrSc.
Duration: 1.3.2000 – 28.2.2003

National

Tenkovrstvové štruktúry pre využitie v energetike
Thin film structures for energy applications
Program: VEGA
Project leader: Ing. Fröhlich Karol DrSc.
Annotation: The project is aimed at preparation of thin film structures for energy applications. We will focus on preparationand study of properties of transparent conducting electrodes for organic photovoltaic cells and organic lightemitting diodes as well as on encapsulation of these devices in the first part. We will concentrate also onpreparation and study of properties metal-insulator-semiconductor structures suitable as photoanodes for watersplitting under sun light. The next part of the project will be devoted to study of thin film electrodes for energystorage in batteries and ton preparation of structures for supercapacitors. Thin film in these devices will beprepared by atomic layer deposition and liquid injection metal organic chemical vapour deposition. Preparedstructures will constitute a base for new advanced devices for energy applications.
Duration: 1.1.2018 – 31.12.2021
Fotoluminescenčné keramické materiály na báze oxynitridov kremíka
Silicon oxynitride-based photoluminiscent ceramic materials
Program: SRDA
Project leader: Ing. Fröhlich Karol DrSc.
Duration: 1.7.2015 – 30.6.2019
Štruktúry odporového prepínania pre rozpoznávanie vzorov
Resistive switching structures for pattern recognition
Program: SRDA
Project leader: Ing. Fröhlich Karol DrSc.
Duration: 1.7.2015 – 30.6.2018
Príprava tenkých vrstiev technológiou nanášania po atómových vrstvách
Growth of thin films using Atomic Layer Deposition
Program: VEGA
Project leader: Ing. Fröhlich Karol DrSc.
Duration: 1.1.2014 – 31.12.2017
Kompetenčné centrum pre nové materiály, pokročilé technológie a energetiku
Center of competence for new materials, advanced technologies and energetics
Program: EU Structural Funds Research & Development
Project leader: Ing. Fröhlich Karol DrSc.
Duration: 1.8.2011 – 30.11.2015
ReSwitch – Štruktúry kov-oxid-kov pre nanorozmerné pamäťové bunky na báze odporového prepínania
Metal-oxide-metal structures for resistive switching based memory cells
Program: SRDA
Project leader: Ing. Fröhlich Karol DrSc.
Duration: 1.5.2011 – 30.4.2014
Tenké vrstvy oxidov a ich uplatnenie v pokročilých elektronických súčiastkach
Thin oxide films and their application in advanced electronic devices
Program: VEGA
Project leader: Ing. Fröhlich Karol DrSc.
Duration: 1.1.2011 – 31.12.2013
ENERGOZ – Efektívne riadenie výroby a spotreby energie z obnoviteľných zdrojov
Effective control of production and consumption of energy from renewable sources
Program: EU Structural Funds Research & Development
Project leader: Ing. Fröhlich Karol DrSc.
Project webpage: http://tisav.choma.sk/index.php?projekt=energoz&card=energoz
Duration: 1.4.2010 – 1.3.2013
CENTE II – Budovanie Centra Excelentnosti pre Nové Technológie v Elektrotechnike – II. etapa
Center of Excellence for New Technologies in Electrical Engineering II.
Program: EU Structural Funds Research & Development
Project leader: Ing. Fröhlich Karol DrSc.
Duration: 1.3.2010 – 28.2.2013
Vývoj univerzálnej HD video platformy pre aplikáciu v broadcastingu, vzdelávaní a výskume
Development of HD video universal platform for application in broadcasting, education and research (HD Video)
Program: EU Structural Funds Research & Development
Project leader: Ing. Fröhlich Karol DrSc.
Project webpage: http://www.monogram.sk/projekty0.html
Duration: 1.2.2010 – 31.1.2013
CEKOODUV – Centrum komercializácie poznatkov a ochrany duševného vlastníctva Slovenskej akadémie vied
Centre of knowledge commercialization and intellectual property rights management of the Slovak Academy of Sciences
Program: EU Structural Funds Research & Development
Project leader: Ing. Fröhlich Karol DrSc.
Project webpage: http://tisav.choma.sk/index.php?projekt=ceko
Duration: 1.10.2009 – 31.3.2012
Štruktúry kov-izolant-kov pre nanorozmerné pamäte typu DRAM
Structure metal-insulator-metal for nanoscale DRAM memories
Program: SRDA
Project leader: Ing. Fröhlich Karol DrSc.
Duration: 1.9.2008 – 30.6.2011
CENTE – Centrum excelentnosti pre nové technológie v elektrotechnike
Center of Excellence for New Technologies in Electrical Engineering
Program: EU Structural Funds Research & Development
Project leader: Ing. Fröhlich Karol DrSc.
Project webpage: http://www.elu.sav.sk/cente/intro_sk.html
Duration: 15.5.2009 – 14.5.2011
Mikroštruktúra veľmi tenkých vrstiev pre modernú mikroelektroniku
Microstructure of very thin films for advanced microelectronics
Program: VEGA
Project leader: Ing. Fröhlich Karol DrSc.
Duration: 1.1.2008 – 31.12.2010
MORGAN – Materiály pre robustný gálium nitrid
Materials for Robust Gallium Nitride
Program: Podpora MVTS z prostriedkov SAV
Project leader: Ing. Fröhlich Karol DrSc.
Duration: 16.7.2009 – 31.12.2009
Tenké oxidové vrstvy pre GaN heteroštruktúry
Thin oxide films for GaN heterostructures
Program: SRDA
Project leader: Ing. Fröhlich Karol DrSc.
Duration: 1.3.2007 – 30.11.2008
MatNet – Vybudovanie výskumno-vývojovej a inovačnej siete pre oblasť materiálov a technológií ich spájania
Creation of network for innovations, research & development in the field of advanced materials and technologies of their joining
Program: Európsky sociálny fond /ESF/ (MŠ SR, MPSVR SR)
Project leader: Ing. Fröhlich Karol DrSc.
Project webpage: http://www.matnet.sav.sk/
Duration: 1.4.2006 – 30.9.2008
Tenké vrstvy oxidov pre pokročilé MOS štruktúry
Program: SRDA
Project leader: Ing. Fröhlich Karol DrSc.
Duration: 1.2.2005 – 31.12.2007
THIOX – Tenké vrstvy pre nové súčiastky na báze oxidov
Thin oxide films for novel oxide devices
Program: Other projects
Project leader: Ing. Fröhlich Karol DrSc.
Duration: 1.1.2003 – 31.12.2007