National
Výskum a vývoj kontaktov pre nové materiály a súčiastky | |
Contact engineering for advanced materials and devices | |
Program: | VEGA |
Project leader: | RNDr. Gregušová Dagmar, DrSc. |
Annotation: | Intensive research has so far been done into metallic contacts to semiconductors. However, new types ofconductivity, materials and devices, and new contact formation mechanisms require new insights into theformation of such contacts. Our aim is to determine the processes and physics behind metallization schemes fornormally-off InAlN-based heterostructure high electron mobility transistors with hole conductivity. InAlN with ahigh molar fraction of InN will be doped with Mg, and the ohmic and Schottky metallic stacks will be optimized. New transition metal dichalkogenide materials (TMDCs) are very promising for new device applications. However,metallization schemes for TMDCs are very challenging. TMDCs exhibit varying band gap widths in dependenceof their thickness. Our aim is to study metallization schemes for TMDCs, their topology, and explain differences between ex-foliated and grown samples, and differences between back-gated and top-gated devices in correlation with basic TMDCs properties. |
Duration: | 1.1.2021 – 31.12.2024 |
SENAD – Polovodičové nanomembrány pre hybridné súčiastky | |
Semiconductor nanomembranes for hybrid devices | |
Program: | SRDA |
Project leader: | Ing. Kúdela Róbert, CSc. |
Annotation: | The project deals with GaAs and GaN-based nanomembranes, including their preparation, study of physical properties, application in new hybrid devices that cannot be effectively prepared with present monolithic technologies. A "GaAs-based (or GaN-based) nanomembrane" can be defined as a monocrystalline structure that was released from its original substrate, is either free-standing or bonded to a host substrate, and its thickness is up to hundreds nanometers and lateral dimensions are more than two orders magnitude larger. Thin organic films, which can modify properties of nanomembranes, will be deposited on some samples. |
Duration: | 1.7.2016 – 31.12.2019 |