Projects

National

Vysokoodolné polovodičové senzory ionizujúceho žiarenia pre využitie v radiačnom prostredí
Radiation resistant semiconductor sensors for utilization in harsh environment
Program: VEGA
Project leader: Mgr. Zaťko Bohumír PhD
Annotation: Recently, detectors of ionizing radiation are important part of many fields of science and research. The object of proposal is research of various semiconductor detector structures based on Si, GaAs, 4H-SiC and CdTe as a detector of ionizing radiation where 4H-SiC is wide bandgap semiconductor which is radiation resistant material suitable for long term work in harsh environment. This includes optimization of prepared sensor in term of utilization and also what type of radiation will be detected. Also passivation and encapsulation is important in long term word of prepared sensors. The contribution will be also in the simulation due to optimization of size and thickness of sensor contacts and passivation. The prepared structures will be characterized by electrical (curren-voltage and capacitance-voltage measurements) and spectrometric measurements using standartly used radioisotope sources. Also radiation hardness of samples will be tested (increased temperature, ionizing environment).
Duration: 1.1.2020 – 31.12.2023
Radiačne odolnejší senzor pre RTG zobrazovanie vyššej kvality
Radiation harder sensor for X-ray imaging of higher quality
Program: SRDA
Project leader: Mgr. Zaťko Bohumír PhD
Duration: 1.7.2019 – 30.6.2023
Výskum radiačne odolných polovodičových detektorov pre jadrovú energetiku
Research of radiation resistant semiconductor detector for nuclear energies
Program: SRDA
Project leader: Mgr. Zaťko Bohumír PhD
Duration: 1.7.2019 – 31.12.2022
Detekcia ionizujúcich častíc s využitím senzorov na báze semiizolačného GaAs a 4H-SiC pre fyziku vysokých energií
Detection of ionizing particles using sensors base on semi-insulating GaAs and 4H-SiC for high energy physics
Program: VEGA
Project leader: Mgr. Zaťko Bohumír PhD
Annotation: The submitted project concern with research of semiconductor detectors based on semi-insulating GaAs and high quality 4H-SiC epitaxial layer as a detectos of ions and fast neutrons, which includes: – the technology study of preparation optimized detection structures of ionizing radiation; – simulation of detection performance of structures and their optimization in term of area and thickness of used metalization contacts as well as whole detection volume of structures; – study of physical and electrical properties of prepared structures, measurement of detection performances of detector structures using alpha particles, high energy ions (40 MeV Xe+), fast neutrons; – investigation of radiation hardness of prepare structures against high energy ions (Kr+, Xe+ 167 MeV) and electrons (5 MeV), study of electrical and detection parameters; – optimization and desing of connected spectrometry chain, which includes modifying and adaption of preamplifier with the aim of reaching best energy resolution.
Duration: 1.1.2016 – 31.12.2019
Výskumno-vývojové centrum pre pokročilé rtg technológie
Research and development center for advanced X-ray technologies
Program: EU Structural Funds Research & Development
Project leader: Mgr. Zaťko Bohumír PhD
Duration: 1.6.2012 – 31.3.2016
Nové polovodičové detektory neutrónov
New semiconductor detectors of neutrons
Program: SRDA
Project leader: Mgr. Zaťko Bohumír PhD
Duration: 1.7.2012 – 31.12.2015
Pixelové senzory rtg. a gama žiarenia pre použitie najmä v digitálnej
Pixel sensors of X- and gamma rays for using primarily in digital imaging
Program: VEGA
Project leader: Mgr. Zaťko Bohumír PhD
Duration: 1.1.2013 – 31.12.2015
Polovodičové detektory pre diagnostiku horúcej plazmy
Semiconductor radiation detectors for hot plasmas diagnostics
Program: VEGA
Project leader: Mgr. Zaťko Bohumír PhD
Duration: 1.1.2010 – 31.12.2012