TRANSCOE – Vývoj nových vodivých priehladných elektród pre organickú elektroniku
Development of new designed transparent conductive electrodes for organic electronics
Program: Bilateral – other
Project leader: Ing. Fröhlich Karol DrSc.
Annotation: Subject of the proposed project is preparation of new transparent conductive electrodes with high transparency and low sheet resistance for organic photovoltaic\’s (OPVs) and organic light emitting diodes (OLEDs). The project will focus on five issues; i) electrode design ii) synthesis of conductive electrodes; iii) fabrication, characterization and optimization of transparent electrodes; iv) fabrication and characterization of OPVs and OLEDs to test the performance of the prepared transparent conductive electrodes; v) encapsulation. We will prepare OPVs and OLEDs with incorporated novel electrode design and test the performances of the devices when the electrode materials will be deposited on glass and/or flexible substrate. Transparent conductive electrodes will be based either on organic Ag-nanowire network -organic multilayered structure or on atomic layer deposited Al-doped ZnO films. The electrodes will be characterized and optimized by measuring the sheet resistance and light transmission. The sheet resistance of the electrode should be adjusted to below 12 Ω and 50 Ω sq−1 for organic and Al-doped ZnO films transparent electrodes, respectively. Finally, OPVs and OLEDs will be encapsulated using atomic layer deposited thin films and their performance will be examined. Proposed project includes two different approaches of transparent conducting electrodes preparation for OPVs and PLEDs. Evaluation of performance of these two types of electrodes presents important and unique output of the project. As a result of the project A step to commercialization of new transparent conductive electrodes, OPVs and OLEDs will be achieved through international collaboration. Funding of the proposed project will create seed for setting up a new research on flexible electronics, Organic Field Effect Transistors (OFETs), Organic Thin Film Transistors (OTFTs), and nanotechnology applications in electronic and photonics for both partners.
Duration: 1.2.2017 – 31.1.2020


CEMEA – Vybudovanie centra pre využitie pokročilých materiálov SAV
Building a centre for advanced material application SAS
Program: Štrukturálne fondy EÚ Výskum a inovácie
Project leader: Ing. Ťapajna Milan PhD.
Duration: 1.7.2019 – 30.6.2023
Vertikálny GaN MOSFET pre výkonové spínacie aplikácie
Vertical GaN MOSFET for power switching applications
Program: SRDA
Project leader: Ing. Kuzmík Ján DrSc.
Annotation: Owing the ever growing demand for the energy volume, energy attainability represents one of the most important issues of today’s society. However, there are great reserves in the energy savings available. According to available analyses, more than 10% of all electricity is ultimately lost in the form of conversion losses. Clearly, even partial improvement in the conversion efficiency can have strong economic impact. As the most of energy is now used for the electronics, corresponding scale of the losses forms at the end-user side, where the electricity is converted into a form suitable for a particular appliance. The main effort towards the conversion efficiency improvements therefore targets the area of power AC/DC and DC/DC converters for consumer and industrial electronics. Significant improvement in the conversion efficiency can be achieved by using GaN based transistors, as they are capable to operate at much higher frequencies with almost three times lower switching losses compared to Si devices.The main goal of the project is the research and development of vertical GaN MOSFET without using p-doping, and gaining the original knowledge on electrical and physical properties of the developed devices. From the quantitative point of view, our proof-of-concept device will target RON<2 mOhm/cm2 and VBD>600 V. An original feature of the proposed concept is utilization of the semi-insulating (SI) GaN as a channel layer (instead of p-type GaN), which blocks the current flow through the transistor at zero gate voltage. To open the transistor channel, positive voltage applied to the gate will be needed to induce down bend-bending in the SI GaN, allowing electron injection from the source to the drift region (along the side walls of SI GaN). This concept therefore represents a unipolar enhancement-mode transistor, while drift region is formed of un-doped GaN with extremely low density of dislocation grown directly on GaN substrate.
Duration: 1.7.2019 – 30.6.2022
Pokročilé III-N súčiastky pre prenos informácie a energie
Advanced III-N devices for energy and information transfer
Program: VEGA
Project leader: Ing. Kuzmík Ján DrSc.
Annotation: Gallium Nitride (GaN) and related compounds commonly referred as III-N have significantly more flexible energy gap, higher breakdown electric field intensity, a large spontaneous polarization, high thermal and radiation resistance, but also the high mobility of electrons. Therefore there is an effort to develop III-N semiconductor devices, mainly HFETs, which have the potential to gradually replace Si, Si/SiGe, GaAs and InP devices in microwave and power applications, switches, switching amplifiers, logic circuits and mixed-signal electronics. Consequently, in this manner we aspire to develop HFETs with InN channel for ultra-fast information transfer, advanced GaN-based transistor switches for energy conversion, technology of GaN-based fast mixed-signal electronics, and GaN-based UV sensors for space applications.
Duration: 1.1.2018 – 31.12.2021