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| ATOSENS – 3D tlač atomárnych vrstiev ako nová paradigma pre múdru senzoriku | |
| Atomic-layer 3D printing as a new paradigm for smart sensorics | |
| Program: | ERANET |
| Project leader: | Ing. Hudec Boris, PhD. |
| Annotation: | The goal of the project is adopting new rapid on-demand prototyping fab-less fabrication method of atomic-layer additive manufacturing (ALAM) to fabricate a matrix of non-identical microscopic TiO2-based hydrogen-sensing elements, arranged into pre-programmed hardware neural network (HNN). The first application is a fully ALAM-printed prototype of a smart Pt/TiO2-based low-power hydrogen sensor with low-level in-sensor data processing. Wider adoption of ALAM technology, which we will pursue through the open innovation hub framework, where rapid prototyping of various ALAM-printed HNN designs from stakeholders, will be encouraged. Project addresses the needs for novel process technologies considering circular economy with minimized waste and use of critical materials, and the need for new smart sensors with in-sensor data processing for the rising hydrogen energy infrastructure. |
| Duration: | 1.6.2023 – 31.5.2026 |
National
| Transit2D – Tranzistory na báze 2D kovových chalkogenidov pripravených teplom podporovanou konverziou | |
| Transistors based on 2D Metal Chalcogenides Grown via Thermally Assisted Conversion | |
| Program: | SRDA |
| Project leader: | Ing. Ťapajna Milan, PhD. |
| Annotation: | 2D materials can form one-atom-thick sheets with extraordinary properties. One of the most promising classes of2D materials is the transition metal dichalcogenides (TMDs). The transition from an indirect to a direct bandgap,when the bulk materials is thinned down to a monolayer, results in unique electrical and optical properties of 2DTMDs. Post-transition metal chalcogenides (PTMCs) represents another interesting group of 2D materials. Thesematerials have wide band gap and, depending on the structure of the material, show anisotropic electrical andoptical properties. The aim of this project is the fabrication of field-effect transistors with metal-oxide-semiconductorgate (MOSFETs) based on selected TMDs and PTMCs compounds and detail analysis of their transport properties.We will focus on large-area few-layer PtSe2 and GaS/GaSe films grown by thermal assisted conversion, i.e.sulfurization and selenization. Based on the existing experiences, structural, chemical and electrical properties ofhorizontally-aligned PtSe2 films prepared by selenization will be optimized, targeting mobilities similar to thoseprepared by mechanical exfoliation. Then, MOSFET technology using both, top-gate as well as bottom-gateapproach will be developed and optimized. Atomic layer deposition and metal-oxide chemical vapor deposition(MOCVD) will be employed for gate oxide growth. GaS/GaSe few-layer films will be prepared by chalcogenization |
| Duration: | 1.7.2022 – 30.6.2026 |
| Ultratenké homogénne povrchové vrstvy na štruktúrach komplexnej morfológie pre vylepšenie výkonu batérii využitím depozície po atómových vrstvách | |
| Ultra-thin conformal surface coatings of complex-morphology structures for improving battery performance using atomic layer deposition | |
| Program: | VEGA |
| Project leader: | Ing. Hudec Boris, PhD. |
| Annotation: | Project is focused on the development and optimization of method of 3D deposition of conformal ultra-thincoatings using ALD (atomic layer deposition) on structures of complex morphology, such as micro-porous layersand powders. The method will subsequently be applied in preparation of new generation Li-based batteries, bypassivation and modification of micro-porous surfaces of cathode layers. Effect of ultra-thin ALD coatingsconformality at the nano-scale will be systematically evaluated by correlation of electron microscopy analyseswith electrochemical measurements of prepared batteries. Next step will be the modification of surfaces ofdiscrete metal and ceramic micro-particles and powders with the aim of their subsequent application in fabrication of novel ceramic and metal materials and also new materials for experimental battery electrodes. |
| Duration: | 1.1.2022 – 31.12.2025 |
| PEGANEL – p-GaN elektronika pre úsporu energie a post-CMOS obvody | |
| p-GaN electronics for energy savings and beyond-CMOS circuits | |
| Program: | SRDA |
| Project leader: | Ing. Kuzmík Ján, DrSc. |
| Annotation: | III-N semiconductors are probably the most versatile and promising semiconductor family, consisted of artificialcompounds made of GaN, AlN and InN. In the project proposal we describe new technological concepts withsufficient freedom to solve main problems of the III-N post-beyond CMOS age: in transistors co-existence of theparasitic n-channel along with the p-channel, as well as low hole gas density and mobility. Similarly, we aim todemonstrate scalable threshold voltage in the enhancement-mode p-doped power transistors, which are needed bythe industry for efficient, energy-saving convertors. In these aspects, our laboratories already showed verypromising results proving the competence to reach described targets. If successfully implemented, results of ourproposed project would represent a significant step forward not only from the world-wide point of view but is also infull agreement with the RIS3 SK (perspective areas of specialization of the Slovak economy), particularly in thefield of semiconductors for electric cars of automotive industry, as well as in information and communicationsciences. |
| Duration: | 1.7.2022 – 30.6.2025 |
| Nová technológia prípravy senzorov, detektorov a memristorov pre inteligentnú mikroelektroniku v 21. storočí | |
| New technology for the preparation of sensors, detectors and memristors for intelligent microelectronics in the 21st century | |
| Program: | Európsky fond regionálneho rozvoja (EFRR) |
| Project leader: | RNDr. Cambel Vladimír, DrSc. |
| Annotation: | Project New fabrication technology of sensors, detectors and memristors for intelligent microelectronics in the 21st century features new approach to fabrication technology of these microelectronic devices. The goal is to study fabrication of sensors, detectors and memristors using new inovative controlled local ALD growth technology of gate, isolation and passivation oxide films using the atomic layer deposition (ALD) method. |
| Duration: | 1.3.2022 – 30.9.2023 |