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| Transit2D – Tranzistory na báze 2D kovových chalkogenidov pripravených teplom podporovanou konverziou | |
| Transistors based on 2D Metal Chalcogenides Grown via Thermally Assisted Conversion | |
| Program: | SRDA |
| Project leader: | Ing. Ťapajna Milan, PhD. |
| Annotation: | 2D materials can form one-atom-thick sheets with extraordinary properties. One of the most promising classes of2D materials is the transition metal dichalcogenides (TMDs). The transition from an indirect to a direct bandgap,when the bulk materials is thinned down to a monolayer, results in unique electrical and optical properties of 2DTMDs. Post-transition metal chalcogenides (PTMCs) represents another interesting group of 2D materials. Thesematerials have wide band gap and, depending on the structure of the material, show anisotropic electrical andoptical properties. The aim of this project is the fabrication of field-effect transistors with metal-oxide-semiconductorgate (MOSFETs) based on selected TMDs and PTMCs compounds and detail analysis of their transport properties.We will focus on large-area few-layer PtSe2 and GaS/GaSe films grown by thermal assisted conversion, i.e.sulfurization and selenization. Based on the existing experiences, structural, chemical and electrical properties ofhorizontally-aligned PtSe2 films prepared by selenization will be optimized, targeting mobilities similar to thoseprepared by mechanical exfoliation. Then, MOSFET technology using both, top-gate as well as bottom-gateapproach will be developed and optimized. Atomic layer deposition and metal-oxide chemical vapor deposition(MOCVD) will be employed for gate oxide growth. GaS/GaSe few-layer films will be prepared by chalcogenization |
| Duration: | 1.7.2022 – 30.6.2026 |
| Transport magnetických skyrmiónov v antidot mriežkach: Efekt teploty a kombinácie rôznych transportných mechanizmov | |
| Transport of magnetic skyrmions in antidot lattices: Effect of temperature and combination of transport mechanisms | |
| Program: | VEGA |
| Project leader: | Mgr. Feilhauer Juraj, PhD. |
| Duration: | 1.1.2021 – 31.12.2023 |
| Robustné spinové vlny pre budúce magnonické aplikácie | |
| Robust spin waves for future magnonic applications | |
| Program: | SRDA |
| Project leader: | Dr. Mruczkiewicz Michal |
| Annotation: | In this project we will focus on the theoretical and experimental investigation of spin wave dynamics at nanoscale. Spin wave is considered as candidate for an information carrier in ultrafast and energy efficient information processing devices. It is due the unique properties of spin waves, namely low heat dissipation, possible manipulation at nanoscale or reconfigurability. We are going to investigate specific spin wave systems, that can host robust, unidirectional and reprogrammable spin waves. Therefore, the results of this project will contribute to the field of modern magnetism, magnonics. |
| Duration: | 1.7.2020 – 30.6.2023 |
| Štúdium okrajových stavov a Landauových hladín v elektronickom umelom graféne | |
| Edge states and Landau levels in electronic artificial graphene | |
| Program: | VEGA |
| Project leader: | Mgr. Feilhauer Juraj, PhD. |
| Duration: | 1.1.2018 – 31.12.2020 |