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| Nanoelsen – Nanoštrukturované tenkovrstvové materiály vyznačujúce sa slabými väzbovými interakciami pre elektronické a senzorické aplikácie | |
| Nanostructured thin-film materials characterized by weak binding interactions for electronic and sensoric applications | |
| Program: | SRDA |
| Project leader: | RNDr. Gregušová Dagmar, DrSc. |
| Annotation: | The proposed project is focused on the basic research of the preparation processes and properties ofsemiconducting sulfides of transition metals such as Mo, W and Ni and selected combinations with their oxides inthe form of mixed sulfides and oxides, as well as the possibilities of their doping with noble metals (Pt, Au) for usein gas sensors as well as in supercapacitors. We also anticipate full utilization of semiconductormicroelectronic and micromechanical techniques and micro / nanotechnologies, which can significantly contributeto qualitatively improved detection properties, low operating power consumption of gas sensors as well asincreased energy efficiency and supercapacitor lifetime. |
| Duration: | 1.7.2022 – 30.6.2026 |
| Transit2D – Tranzistory na báze 2D kovových chalkogenidov pripravených teplom podporovanou konverziou | |
| Transistors based on 2D Metal Chalcogenides Grown via Thermally Assisted Conversion | |
| Program: | SRDA |
| Project leader: | Ing. Ťapajna Milan, PhD. |
| Annotation: | 2D materials can form one-atom-thick sheets with extraordinary properties. One of the most promising classes of2D materials is the transition metal dichalcogenides (TMDs). The transition from an indirect to a direct bandgap,when the bulk materials is thinned down to a monolayer, results in unique electrical and optical properties of 2DTMDs. Post-transition metal chalcogenides (PTMCs) represents another interesting group of 2D materials. Thesematerials have wide band gap and, depending on the structure of the material, show anisotropic electrical andoptical properties. The aim of this project is the fabrication of field-effect transistors with metal-oxide-semiconductorgate (MOSFETs) based on selected TMDs and PTMCs compounds and detail analysis of their transport properties.We will focus on large-area few-layer PtSe2 and GaS/GaSe films grown by thermal assisted conversion, i.e.sulfurization and selenization. Based on the existing experiences, structural, chemical and electrical properties ofhorizontally-aligned PtSe2 films prepared by selenization will be optimized, targeting mobilities similar to thoseprepared by mechanical exfoliation. Then, MOSFET technology using both, top-gate as well as bottom-gateapproach will be developed and optimized. Atomic layer deposition and metal-oxide chemical vapor deposition(MOCVD) will be employed for gate oxide growth. GaS/GaSe few-layer films will be prepared by chalcogenization |
| Duration: | 1.7.2022 – 30.6.2026 |
| Rast a optická charakterizácia 2D materiálov: MoTe2, WTe2, PtTe2 | |
| Growth and optical characterization of 2D materials: MoTe2, WTe2, PtTe2 | |
| Program: | VEGA |
| Project leader: | RNDr. Pribusová Slušná Lenka, PhD. |
| Annotation: | Research of thin-film materials noticed a significant increase, especially since the discovery of graphene, when a wide range of 2D materials began to study. A significant group of 2D materials is transition metal dichalcogenides(TMDs), including MoTe2, WTe2, and PtTe2. These materials have unique optoelectronic properties that varydue to the thickness of the layer and the crystal structure. Electrical properties vary depending on structures, fromsemiconducting to metallic. The preparation of films by tellurization of molybdenum, tungsten, and platinum ismore difficult than sulfurization or selenization due to the weaker redox properties of tellurium. The challenge in thin films is the controlled preparation of the required crystal structure of homogenous large-arealayers. This project aims to contribute to the solution of preparing these materials, characterize their structure and orientation of the films concerning the substrate, and determine the optical parameters and electrical properties. |
| Duration: | 1.1.2023 – 31.12.2025 |
| Optimalizácia rastu parametrov pre tenké vrstvy MoTe2 | |
| Oprimisation of growth parameters for MoTe2 | |
| Program: | DoktoGranty |
| Project leader: | Mgr. Vojteková Tatiana |
| Duration: | 1.1.2022 – 31.12.2022 |