Projects

National

Pokročilé III-N súčiastky pre prenos informácie a energie
Advanced III-N devices for energy and information transfer
Program: VEGA
Project leader: Ing. Kuzmík Ján DrSc.
Annotation: Gallium Nitride (GaN) and related compounds commonly referred as III-N have significantly more flexible energy gap, higher breakdown electric field intensity, a large spontaneous polarization, high thermal and radiation resistance, but also the high mobility of electrons. Therefore there is an effort to develop III-N semiconductor devices, mainly HFETs, which have the potential to gradually replace Si, Si/SiGe, GaAs and InP devices in microwave and power applications, switches, switching amplifiers, logic circuits and mixed-signal electronics. Consequently, in this manner we aspire to develop HFETs with InN channel for ultra-fast information transfer, advanced GaN-based transistor switches for energy conversion, technology of GaN-based fast mixed-signal electronics, and GaN-based UV sensors for space applications.
Duration: 1.1.2018 – 31.12.2021
Opracovanie povrchu polovodiča ako cesta k novým III-As a III-N elektronickým súčiastkám
Surface processing of semiconductors as the way towards new III-As and III-N electronic devices
Program: VEGA
Project leader: RNDr. Gregušová Dagmar DrSc.
Annotation: Surfaces of III-V semiconductors exhibit large densisties of surface states that limit the use of the semicondutorsin electronics. Native oxides on III-V surfaces do not match the qualiy of oxides on the surface of silicon. Thesurface states have been studied and manipulated by many researchers with the aim to eliminate their infuence.Our aim is to find out how technology is used to eliminate or passivate the states. We intend to useheterostrucutres whose surface will be manipulated to allow for the preparation of high quality MOSHFETs.Manipulation with surface states leads to new types of device. It will thus be possible to integrate various types oftransistor on a single wafer. To explore properties of individual layers of heterostructure by optical measurementwill necessite their release from original substrates and transfer to host substrates. Procedures of heterostructurerelease and transfer will be used in the integration of other semiconductor devices on planar and non-planarsubstrates.
Duration: 1.1.2017 – 31.12.2020