Publications

Hasenöhrl, Stanislav

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Publications in 2020:
  • CHAUHAN, Prerna** – HASENÖHRL, Stanislav – MINJ, A. – CHAUVAT, M.-P. – RUTERANA, P. – KUZMÍK, Ján. Growth evolution of N-polar Indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer. In Applied Surface Science, 2020, vol. 502, no. 144086. (2019: 6.182 – IF, Q1 – JCR, 1.230 – SJR, Q1 – SJR). ISSN 0169-4332. Typ: ADCA
  • CHAUHAN, Prerna** – HASENÖHRL, Stanislav – VANČO, L. – ŠIFFALOVIČ, Peter – DOBROČKA, Edmund – MACHAJDÍK, Daniel – ROSOVÁ, Alica – GUCMANN, Filip – KOVÁČ, Jaroslav Jr. – MAŤKO, Igor – KUBALL, M. – KUZMÍK, Ján. A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: A complete depth-resolved investigation. In CrystEngComm, 2020, vol. 22, p. 130-141. (2019: 3.117 – IF, Q2 – JCR, 0.814 – SJR, Q1 – SJR). ISSN 1466-8033. Typ: ADCA
  • POHORELEC, Ondrej** – ŤAPAJNA, Milan – GREGUŠOVÁ, Dagmar – GUCMANN, Filip – HASENÖHRL, Stanislav – HAŠČÍK, Štefan – STOKLAS, Roman – SEIFERTOVÁ, Alena – PÉCZ, B. – TÓTH, L. – KUZMÍK, Ján. Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs. In Applied Surface Science, 2020, vol. 528, no. 146824. (2019: 6.182 – IF, Q1 – JCR, 1.230 – SJR, Q1 – SJR). ISSN 0169-4332.(VEGA 2/0109/17. VEGA 2/0012/18). Typ:
  • ŠICHMAN, Peter – HASENÖHRL, Stanislav – STOKLAS, Roman – PRIESOL, J. – DOBROČKA, Edmund – HAŠČÍK, Štefan – GUCMANN, Filip – VINCZE, A. – CHVÁLA, A. – MAREK, J. – ŠATKA, A. – KUZMÍK, Ján**. Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure. In Materials science in semiconductor processing, 200, vol. 118, no.105203. ISSN 1369-8001.(APVV 18-0054. VEGA 2/0012/18). Typ: