Publications

Kuzmík, Ján

Select year reporting publications:

Publications in 2020:
  • ADIKIMENAKIS, A.** – CHATZOPOULOU, P. – DIMITRAKOPULOS, G.P. – KEHAGIAS, Th. – TSAGARAKI, K. – ANDROULIDAKI, M. – DOUNDOULAKIS, G. – KUZMÍK, Ján – GEORGAKILAS, A. Correlation of threading dislocations with the electron concentration and mobility in InN heteroepitaxial layers grown by MBE. In ECS Journal of Solid State Science and Technology, 2020, vol. 9, no. 015006. (2019: 2.142 – IF, Q3 – JCR, 0.521 – SJR, Q2 – SJR). ISSN 2162-8769. Typ: ADCA
  • CHAUHAN, Prerna** – HASENÖHRL, Stanislav – MINJ, A. – CHAUVAT, M.-P. – RUTERANA, P. – KUZMÍK, Ján. Growth evolution of N-polar Indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer. In Applied Surface Science, 2020, vol. 502, no. 144086. (2019: 6.182 – IF, Q1 – JCR, 1.230 – SJR, Q1 – SJR). ISSN 0169-4332. Typ: ADCA
  • CHAUHAN, Prerna** – HASENÖHRL, Stanislav – VANČO, L. – ŠIFFALOVIČ, Peter – DOBROČKA, Edmund – MACHAJDÍK, Daniel – ROSOVÁ, Alica – GUCMANN, Filip – KOVÁČ, Jaroslav Jr. – MAŤKO, Igor – KUBALL, M. – KUZMÍK, Ján. A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: A complete depth-resolved investigation. In CrystEngComm, 2020, vol. 22, p. 130-141. (2019: 3.117 – IF, Q2 – JCR, 0.814 – SJR, Q1 – SJR). ISSN 1466-8033. Typ: ADCA
  • POHORELEC, Ondrej** – ŤAPAJNA, Milan – GREGUŠOVÁ, Dagmar – GUCMANN, Filip – HASENÖHRL, Stanislav – HAŠČÍK, Štefan – STOKLAS, Roman – SEIFERTOVÁ, Alena – PÉCZ, B. – TÓTH, L. – KUZMÍK, Ján. Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs. In Applied Surface Science, 2020, vol. 528, no. 146824. (2019: 6.182 – IF, Q1 – JCR, 1.230 – SJR, Q1 – SJR). ISSN 0169-4332.(VEGA 2/0109/17. VEGA 2/0012/18). Typ:
  • ŠICHMAN, Peter – HASENÖHRL, Stanislav – STOKLAS, Roman – PRIESOL, J. – DOBROČKA, Edmund – HAŠČÍK, Štefan – GUCMANN, Filip – VINCZE, A. – CHVÁLA, A. – MAREK, J. – ŠATKA, A. – KUZMÍK, Ján**. Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure. In Materials science in semiconductor processing, 200, vol. 118, no.105203. ISSN 1369-8001.(APVV 18-0054. VEGA 2/0012/18). Typ: