ALD Technology

The laboratory enables atomic layer deposition of Al2O3, TiO2, HfO2 and ZnO thin films. The films are grown using thermal, ozone and plasma assisted modes at temperatures between ambient up to 350 °C.



  • Gate insulation of GaN- and GaAs-based high electron mobility devices
  • TiO2– and HfO2-based structures for resistive switching
  • Metal-insulator-semiconductor photoanodes for water splitting

Contact: K. Fröhlich, Tel.: +421-2-5922-2641

Access: place an order

Price: 0 Eur/hour for SAS employees


Beneq TFS 200 Thin Film System