ALD Technology

The laboratory enables atomic layer deposition of Al₂O₃, TiO₂, HfO₂ and ZnO thin films. The films are grown using thermal, ozone and plasma assisted modes at temperatures between ambient up to 350 °C.

Equipment:

• Beneq TFS 200, Thin Film System for Atomic Layer Deposition

Application:

• Gate insulation of GaN- and GaAs-based high electron mobility devices
• TiO₂– and HfO₂-based structures for resistive switching
• Metal-insulator-semiconductor photoanodes for water splitting

Contact: K. Fröhlich, Tel.: +421-2-5922-2641

Access: place an order

Price: 0 Eur/hour for SAS employees

Beneq TFS 200 Thin Film System