The laboratory provides optical characterization of semiconductor materials and structures. Standard spectroscopic techniques – photoluminescence, photoreflectance, photoconductivity, photoresponsivity – can be applied at room as well as cryogenic temperatures. High sensitivity detectors are available from near-UV to near infrared. Signals are measured by a standard lock-in technique.
- Optical cryostat UTRECS with a precise temperature regulation in the 4-300 K range
- Argon-ion laser LGK 7872M (488 nm, 20 mW), LASOS Lasertechnik GmbH., THL lamp, housing LSH102 (100 W, spectral range 300-2500 nm), LOT-QuantumDesign GmbH
- Monochromators: Digikrom DK240 (f 240 mm, 500-2800 nm range), CVI Laser Corp., MSH-300 (f 300 mm, 200-2400 nm range), LOT-QuantumDesign GmbH, Shamrock SR500 (f 500 mm, 200-2500 range), Andor Technology Ltd.
- Detectors: PMT DH-30-TE (TE-cooled, 200-850 nm), Bentham Instruments Limited; Si photodiode (400-1100 nm), Photodyne Incorporated; Ge photodiode LN2-cooled G-050-E-LN6N (700-1500 nm), Electro-Optical Systems Inc.; InGaAs photodiode LN2-cooled J23D (700-2600 nm at RT, 700-2250 nm with LN2), Teledyne Judson Technologies LLC
- Lock-in amplifiers: model 5210, EG&G Princeton Applied Research Corp.
- Spectral responsivity of experimental structures and devices.
Contact: RNDr. Michal Kučera, PhD.
Access: Guided access, after agreement with contact person
Price: 0 Eur/hour for SAS employees