Publikačná činnosť

Gucmann, Filip

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Publikácie za rok 2022:
  • EGYENES, Fridrich** – GUCMANN, Filip – DOBROČKA, Edmund – MIKOLÁŠEK, M. – HUŠEKOVÁ, Kristína – ŤAPAJNA, Milan. Transport properties of Si-doped beta-Ga2O3 grown by liquid-injection MOCVD. In ASDAM 2022 : Conference Proceedings. Eds. J. Marek et al. – IEEE, 2022, p. 119-122. ISBN 978-1-6654-6977-7. (International Conference on Advanced Semiconductor Devices and Microsystems) Typ: AFD
  • HRUBIŠÁK, Fedor** – EGYENES, Fridrich – DOBROČKA, Edmund – GUCMANN, Filip – HUŠEKOVÁ, Kristína – KESHTKAR, Javad – ŤAPAJNA, Milan. Growth and properties of Ga2O3 on 4H-SiC using liquid-injection MOCVD. In Proceedings of ADEPT 2021 : 10th International Conference on Advances in Electronic and Photonic Technologies, Tatranská Lomnica, High Tatras, Slovakia. Eds. M. Feiler et al. – Žilina : University of Zilina in EDIS-Publishing Centre of UZ, 2022, p. 47-50. ISBN 978-80-554-1884-1. (APVV 20-0220. VEGA 2/0100/21) Typ: AFD
  • HRUBIŠÁK, Fedor** – HUŠEKOVÁ, Kristína – EGYENES, Fridrich – ROSOVÁ, Alica – KUBRANSKÁ, A. – DOBROČKA, Edmund – NÁDAŽDY, Peter – KESHTKAR, Javad – GUCMANN, Filip – ŤAPAJNA, Milan. Structural and electrical properties of Ga2O3 transistors grown on 4H-SiC substrates. In ASDAM 2022 : Conference Proceedings. Eds. J. Marek et al. – IEEE, 2022, p. 115-118. ISBN 978-1-6654-6977-7. (International Conference on Advanced Semiconductor Devices and Microsystems) Typ: AFD
  • KESHTKAR, Javad** – HOTOVÝ, I. – GUCMANN, Filip – HUŠEKOVÁ, Kristína – DOBROČKA, Edmund – NÁDAŽDY, Peter – EGYENES, Fridrich – MIKOLÁŠEK, M. – ŤAPAJNA, Milan. NiO thin films for solar-blind photodetectors: structure and electrical properties. In Proceedings of ADEPT 2021 : 10th International Conference on Advances in Electronic and Photonic Technologies, Tatranská Lomnica, High Tatras, Slovakia. Eds. M. Feiler et al. – Žilina : University of Zilina in EDIS-Publishing Centre of UZ, 2022, p. 113-116. ISBN 978-80-554-1884-1. (APVV 20-0220. VEGA 2/0100/21) Typ: AFD
  • KOZAK, Andrii** – SOJKOVÁ, Michaela – GUCMANN, Filip – BODIK, Michal – VÉGSO, Karol – DOBROČKA, Edmund – PÍŠ, I. – BONDINO, F. – HULMAN, Martin – ŠIFFALOVIČ, Peter – ŤAPAJNA, Milan**. Effect of the crystallographic c-axis orientation on the tribological properties of the few-layer PtSe2. In Applied Surface Science, 2022, vol. 605, no. 154883. (2021: 7.392 – IF, Q1 – JCR, 1.147 – SJR, Q1 – SJR). ISSN 0169-4332. Dostupné na: https://doi.org/10.1016/j.apsusc.2022.154883 Typ:
  • ROSOVÁ, Alica** – DOBROČKA, Edmund – ELIÁŠ, Peter – HASENÖHRL, Stanislav – KUČERA, Michal – GUCMANN, Filip – KUZMÍK, Ján. In(Ga)N 3D growth on GaN-buffered on-axis and off-axis (0001) sapphire substrates by MOCVD. In Nanomaterials-Basel, 2022, vol. 12, no. 3496. (2021: 5.719 – IF, Q1 – JCR, 0.839 – SJR, Q1 – SJR, karentované – CCC). (2022 – Current Contents, WOS, SCOPUS). ISSN 2079-4991. Dostupné na: https://doi.org/10.3390/nano12193496 (VEGA 2/0005/22) Typ: ADCA