Publikačná činnosť

Hrubišák, Fedor

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Publikácie za rok 2022:
  • HRUBIŠÁK, Fedor**EGYENES, FridrichDOBROČKA, EdmundGUCMANN, FilipHUŠEKOVÁ, KristínaKESHTKAR, JavadŤAPAJNA, Milan. Growth and properties of Ga2O3 on 4H-SiC using liquid-injection MOCVD. In Proceedings of ADEPT 2021 : 10th International Conference on Advances in Electronic and Photonic Technologies, Tatranská Lomnica, High Tatras, Slovakia. Eds. M. Feiler et al. – Žilina : University of Zilina in EDIS-Publishing Centre of UZ, 2022, p. 47-50. ISBN 978-80-554-1884-1. (APVV 20-0220. VEGA 2/0100/21) Typ: AFD
  • HRUBIŠÁK, Fedor**HUŠEKOVÁ, KristínaEGYENES, FridrichROSOVÁ, AlicaKUBRANSKÁ, A.DOBROČKA, EdmundNÁDAŽDY, PeterKESHTKAR, JavadGUCMANN, FilipŤAPAJNA, Milan. Structural and electrical properties of Ga2O3 transistors grown on 4H-SiC substrates. In ASDAM 2022 : Conference Proceedings. Eds. J. Marek et al. – IEEE, 2022, p. 115-118. ISBN 978-1-6654-6977-7. (International Conference on Advanced Semiconductor Devices and Microsystems) Typ: AFD