2010

Abrahamsen, A., Mijatovic, N., Seiler, E., Zirngibl, T., Traeholt, C., Norgard, P., Pedersen, N., Andersen, N., Ostergard, J., : Superconducting wind turbine generators,. Supercond. Sci Technol. 23 (2010) 034019. (Not IEE SAS).

Áč, V., Korytár, D., Zápražný, Z., Dobročka, E., : Thermally tuned x-ray V-shaped monochromator – simulations and experimental results. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 93-96.

Antošová, A., Šipošová, K., Koneracká, M., Závišová, V., Daxnerová, Z., Vávra, I., Fedunová, D., Bagelová, J., Kopčanský, P., Gažová, Z., : Magnetic fluid — a novel approach to treat amyloid-related diseases. Phys. Procedia 9 (2010) 262-265.

Babchenko, O., Ižák, T., Ukraintsev, E., Hruska, K., Rezek, B., Kromka, A., : Toward surface-friendly treatment of seeding layer and selected-area diamond growth. Phys. Status Solidi B 247 (2010) 3026-3029. (Not IEE SAS).

Balog, M., Kováč, J., Šatka, A., Haško, D., Zhang, J., Crimp, M., Vávra, O., Vávra, I., : SiC-based cermet with electrically conductive grain boundaries. Mater. Character. 61 (2010) 420-426.

Blagoev, B., Mateev, E., Štrbik, V., Nurgaliev, T., Uspenskaya, L., : Magnetron sputtering of polycrystalline LSMO/YBCO structures on sapphire substrates, J. Phys.: Conf. Series 223 (2010) 012015.

Boháček, P., Dubecký, F., Zaťko, B., Sekáčová, M., Huran, J., Šalát, T., Nečas, V., Mudroň, J., : Performance study of 2×64 pixel two-line monolithic x-ray detection chip on semi-insulating GaAs. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 244-247.

Boháček, P., Huran, J., Valovič, A., Kobzev, A., Shvetsov, V., Kučera, M., Malinovsky, L., : N-doped nanocrystalline silicon carbide films prepared by PECVD technology. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 81-84.

Brunner, K., Pinčík, E., Kobayashi, H., Kučera, M., Takahashi, M., Rusnák, J., : On photoluminescence properties of a-Si:H-based structures. Applied Surface Sci 256 (2010) 5596-5901.

Brunner, K., Pinčík, E., Kobayashi, H., Kučera, M., Takahashi, M., : Photoluminescence spectra of non-homogeneous a-Si: H layers, Metallurgical Analysis 30 Suppl. 1 (2010) 950-954.

Cambel, V., Eliáš, P., Gregušová, D., Martaus, J., Fedor, J., Karapetrov, G., Novosad, V., : Magnetic elements for switching magnetization magnetic force microscopy tips. J. Magnetism Magn. Mater. 322 (2010) 2715-2721.

Cambel, V., Eliáš, P., Gregušová, D., Fedor, J., Martaus, J., Karapetrov, G., Novosad, V., Kostič, I., : Novel magnetic tips developed for the switching magnetization magnetic force microscopy. J. Nanosci Nanotechnol. 10 (2010) 4477-4481.

Čičo, K., Gregušová, D., Gaži, Š., Šoltýs, J., Kuzmík, J., Carlin, J., Grandjean, N., Pogany, D., Fröhlich, K., : Optimization of the ohmic contact processing in InAlN/GaN high electron mobility transistors for lower temprerature of annealing, Phys. Status Solidi c 7 (2010) 108-111.

Danilewsky, A., Kováč, J., Šatka, A., Hess, A., Cröll, A., Allen, D., McNally, P., Vagovič, P., Cecilia, A., Li, Z., Baumbach, T., Gorostegui-Colinas, E., Elizalde, M., : Dislocation generation related to micro-cracks in Si wafers: High temperature in situ study with white beam X-ray topography. Nuclear Instr. Methods in Phys. Res. B 268 (2010) 399-402.

Davydova, M., Kromka, A., Rezek, B., Babchenko, O., Stuchlik, M., Hruska, K., : Fabrication of diamond nanorods for gas sensing applications. Applied Surface Sci 256 (2010) 5602-5605. (Not IEE SAS).

Dobročka, E., Jergel, M., : X-ray laboratory with rotating anode of the Consortium MULTIDISC of SAS – capabilities of the diffractometer Bruker D8 DISCOVER SSS, Materials Struct. 17 (2010) k12-k17.

Donoval, D., Chvála, A., Šramatý, R., Kováč, J., Carlin, J., Grandjean, N., Pozzovivo, G., Kuzmík, J., Pogany, D., Strasser, G., Kordoš, P., : Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes. Applied Phys. Lett. 96 (2010) 223501.

Donoval, D., Chvála, A., Pozzovivo, G., Šramatý, R., Carlin, J., Kováč, J., Kuzmík, J., Strasser, G., Grandjean, N., Kordoš, P., : Current transport in Ni/InAlN/GaN Schottky diodes. In: WOCSDICE 2010. Eds. D. Pavlidis et al. Darmstadt/Seeheim: TU Darmstadt 2010. ISBN: 978-3-00-030838-3. P. 45-56.

Dubecký, F., Kováč, J., Mudroň, J., Hubík, P., Dubecký, M., Gombia, E., : Photocurrent spectroscopy of semi-insulating GaAS with a new contact metallization: indication of 2DEG formed at the M-S interface. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 29-32.

Dubecký, F., Ladzianský, M., Kindl, D., Nečas, V., : Semi-insulating GaAs radiation detectors: PICTS study of neutroninduced defects. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 207-210.

Farinon, S., Fabbricatore, P., Gömöry, F., : Critical state and magnetization loss in multifilamentary superconducting wire solved through the commercial finite element code ANSYS. Supercond. Sci Technol. 23 (2010) 115004.

Florovič, M., Kováč, J., Škriniarová, J., Lalinský, T., Haščík, Š., Kordoš, P., Donoval, D., Kinder, R., Tomáška, M., : Electrical properties of Al0,3Ga0,7N/GaN heterostructure field effect transistor. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 205-209.

Gömöry, F., Vojenčiak, M., Pardo, E., Soloviov, M., Šouc, J., : AC losses in coated conductors. Supercond. Sci Technol. 23 (2010) 034012. (VEGA 2/0172/09).

Gong, Y., Ťapajna, M., Bakalova, S., Zhang, Y., Edgar, J., Dudley, M., Hopkins, M., Kuball, M., : Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device. Applied Phys. Lett. 96 (2010) 223506.(not IEE SAS).

Gregušová, D., Stoklas, R., Mizue, C., Hori, Y., Novák, J., Hashizume, T., Kordoš, P., : Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition. J. Applied Phys. 107 (2010) 106104. (APVV LPP-0162-09).

Gregušová, D., Gaži, Š., Sofer, Z., Stoklas, R., Dobročka, E., Mikulics, M., Greguš, J., Novák, J., Kordoš, P., : Oxidized Al film as an insulation layer in AlGaN/GaN Metal–Oxide–Semiconductor heterostructure field effect transistors Japan. J. Applied Phys. 49 (2010) art. no. 046504. (VEGA 2/0098/09).

Gregušová, D., Kúdela, R., Eliáš, P., Šoltýs, J., Kostič, I., Cambel, V., : GaAs/AlAs/InGaP heterostructure: a versatile material basis for cantilever designs. J. Micromech. Microeng. 20 (2010) 097001.

Gregušová, D., Mizue, C., Hori, Y., Stoklas, R., Novák, J., Hashizume, T., Kordoš, P., : Trapping effects in Al2O3/AlGaN/GaN MOS structures with gate oxide prepared by different deposition techniques. . In: 10th Expert Evaluation & Control Compound Semicond Mater. & Technol. – EXMATEC 2010. Eds. D. Pavlidis et al. Darmstadt/Seeheim: TU Darmstadt 2010. ISBN: 978-3-00-030837-6. P. 139-140.

Gregušová, D., Hori, Y., Mizue, C., Stoklas, R., Sugawara, K., Hashizume, T., Kordoš, P., : Density of trap states in Al2O3/AlGaN/GaN MOS structures with gate oxide prepared by atomic layer deposition. In: Inter. RCIQE/CREST Joint Workshop 2010. Hokkaido Univ. 2010. P. 34-35.

Grilli, F., Pardo, E., : Simulation of ac loss in Roebel coated conductor cables. Supercond. Sci Technol. 23 (2010) 115018.

Haessler, W., Kováč, P., Eisterer, M., Abrahamsen, A., Herrmann, M., Rodig, C., Nenkov, K., Holzapfel, B., Melišek, T., Kulich, M., Zimmermann, M., Bednarcik, J., Grivel, J., : Anisotropy of the critical current in MgB2 tapes made of high energy milled precursor powder. Supercond. Sci Technol. 23 (2010) 065011.

Hotový, I., Tengeri, A., Řeháček, V., Haščík, Š., Lalinský, T., : Gas sensing micromachined structure based on gallium arsenide. In.: MME 2010. Eds. L. Abelmann et al. Enschede: Univ. Twente 2010. ISBN 978-90-816737-1-6. P. 72-75.

Hotový, I., Tengeri, A., Řeháček, V., Haščík, Š., Lalinský, T., : Gas sensing micromachined structure based on gallium arsenide. In.: MME 2010. Eds. L. Abelmann et al. Enschede: Univ. Twente 2010. ISBN 978-90-816737-1-6. P. 72-75.

Hudec, B., Hranai, M., Hušeková, K., Aarik, J., Tarre, A., Fröhlich, K., : Resistive switching in RuO2/TiO2/RuO2 MIM structures for non-volatile memory application. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 255-258.

Hudec, B., Hušeková, K., Aarik, J., Tarre, A., Kasikov, A., Fröhlich, K., : RuO2/TiO2 based MIM capacitors for DRAM application. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 341-344.

Hudec, B., Hušeková, K., Dobročka, E., Lalinský, T., Aarik, J., Aidla, A., Fröhlich, K., : High-permittivity metal-insulator-metak capacitors with TiO2 rutile dielectric and RuO2 bottom electrode IOP Conf. Series: Mater. Sci Engn. 8 (2010) 012024.

Huran, J., Zaťko, B., Boháček, P., Kobzev, A., Vincze, A., Malinovsky, L., Valovič, A., : Properties of hydrogenated amorphous/nanocrystalline carbon films prepared by plasma enhanced chemical vapour deposition. IoP Conf. Series: Mater. Sci Engn. 12 (2010) 012005. (APVV 0713-07). (APVV 51-0459-06). (VEGA 1/3095/27). (VEGA 2/7170/27).

Huran, J., Shindov, P., Šmatko, V., Valovič, A., Kobzev, A., : Electrical and optical characterization of PECVD silicon carbon nitride thin films, Annual J. Electr. 4 (2010) 94.

Huran, J., Balalykin, N., Shirkov, G., Boháček, P., Kobzev, A., Valovič, A., : Nanocrystalline diamond/amorphous composite carbon films prepared by PECVD technology for photocathode application. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 77-80.

Hušek, I., Kováč, P., : Mechanical properties, interface reactions and transport current densities of multi-core MgB2/Ti/Cu/SS wire. Supercond. Sci Technol. 23 (2010) 075012. (VEGA 2/0037/09).

Hušeková, K., Dobročka, E., Rosová, A., Šoltýs, J., Šatka, A., Fillot, F., Fröhlich, K., : Growth of RuO2 thin films by liquid injection atomic layer deposition. Thin Solid Films 518 (2010) 4701-4704.

Hušeková, K., Hušek, I., Kováč, P., Kulich, M., Dobročka, E., Štrbik, V., : Properties of MgB2 superconductor chemically treated by accetic acid. Physica C 470 (2010) 331-335. (VEGA 2/0037/09).

Chen, D., Pardo, E., Sanchez, A., : Numerical calculations of the driving force on an Abrikosov vortex. Physica C 470 (2010) 444-450.(not IEE SAS).

Chromik, Š., Gierlowski, P., Španková, M., Dobročka, E., Vávra, I., Štrbik, V., Lalinský, T., Sojková, M., Liday, J., Vogrinčič, P., Espinos, J., : Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate. Applied Surface Sci 256 (2010) 5618-5622.

Iavarone, M., Karapetrov, G., Fedor, J., Rosenmann, D., Nishizaki, T., Kobayashi, N., : The local effect of magnetic impurities on superconductivity in CoxNbSe2 and MnxNbSe2 single crystals. J. Phys.-Cond. Matter 22 (2010) 015501.

Iharagi, T., Gendiar, A., Ueda, H., Nishino, T., : Phase transition of the ising model on hyperbolic lattice J. Phys. Soc Japan 79 (2010) 104001.

Jurkovič, M., Hušeková, K., Čičo, K., Dobročka, E., Nemec, M., Fedor, J., Fröhlich, K., : Characterization of high permittivity GdScO3 films prepared by liquid injection MOCVD. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 247-250.

Kohn, E., Alomari, M., Denisenko, A., Dipalo, M., Maier, D., Medjoub, F., Pietzka, C., Delage, S., di Forte Poisson, M., Morvan, E., Sarazin, N., Jacquet, J., Dua, C., Carlin, J., Grandjean, N., Py, M., Gonschorek, M., Kuzmík, J., Pogany, D., Pozzovivo, G., Ostermaier, C., Tóth, L., Pecz, B., De Jaeger, J., Gaquiere, C., Čičo, K., Fröhlich, K., Georgakilas, A., Iliopoulos, E., Konstantinidis, G., Giessen, C., Heuken, M., Schineller, B., : InAlN/GaN heterostructures for microwave power and beyond. In: IEDM 2009. Piscataway: IEEE, 2010. ISBN 978-1-4244-5639-0. P. 173-176.

Kordoš, P., Stoklas, R., Gregušová, D., Gaži, Š., Novák, J., : Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurement. Applied Phys. Lett. 96 (2010) 013505. (VEGA 2/0098/09).

Kordoš, P., Mikulics, M., Fox, A., Gregušová, D., Čičo, K., Carlin, J., Grandjean, N., Novák, J., Fröhlich, K., : RF performance of InAlN/GaN HFETs and MOSHFETs with up to 21. IEEE Electron Dev. Lett. 31 (2010) 180-182.

Korytár, D., Ferrari, C., Mikulík, P., Vagovič, P., Dobročka, E., Áč, V., Konopka, P., Erko, A., Abrosimov, N., Zápražný, Z., : 1D X‐ray Beam Compressing Monochromators. AIP Conf. Proc. 1221 (2010) 59-62.

Korytár, D., Ferrari, C., Mikulík, P., Vagovič, P., Dobročka, E., Áč, V., Konopka, P., Erko, A., Abrosimov, N., : Linearly graded GeSi beam-expanding/compressing X-ray monochromator J. Applied Crystall. 43 (2010) 176-178.

Kováč, P., Hušek, I., Rosová, A., Melišek, T., Kopera, Ľ., : Fine-filamentary in situ MgB2 wires. Supercond. Sci Technol. 23 (2010) 105006. (VEGA 2/0037/09).

Kováč, P., Hušek, I., Kulich, M., Hušeková, K., Melišek, T., Dobročka, E., : Effects influencing the grain connectivity in ex-situ MgB2 wires. Physica C 470 (2010) 340-344. (VEGA 2/0037/09).

Kováč, P., Hušek, I., Melišek, T., Kopera, Ľ., Reissner, M., : Cu stabilized MgB2 composite wire with an NbTi barrier Supercond. Sci Technol. 23 (2010) 025014. (VEGA 2/0037/09).

Kováč, P., Hušek, I., Melišek, T., Kopera, Ľ., Reissner, M., : Stainless steel reinforced multi-core MgB2 wire subjected to variable deformations, heat treatments and mechanical stressing. Supercond. Sci Technol. 23 (2010) 065010. (VEGA 2/0037/09).

Kozak, H., Kromka, A., Babchenko, O., Rezek, B., : Directly grown nanocrystalline diamond field-effect transistor microstructures. Sensor Lett. 8 (2010) SI482-487. (Not IEE SAS).

Kucharík, M., Korenko, M., Janičkovič, D., Kadlečíková, M., Boča, M., Oboňa, J., : Rapid solidification of cryolite and cryolite–alumina melts Monatsh. Chem. 141 (2010) 7-13.

Kuzmík, J., Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Carlin, J., Gonschorek, M., Feltin, E., Grandjean, N., Douvry, Y., Gaquiere, C., DeJaeger, J., Čičo, K., Fröhlich, K., Škriniarová, J., Kováč, J., Strasser, G., Pogany, D., Gornik, E., : Proposal and performance analysis of normally off GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier. IEEE Trans. Electron Dev. 57 (2010) 2144-2154.

Kuzmík, J., Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Carlin, J., Gonschorek, M., Feltin, E., Grandjean, N., Douvry, Y., Gaquiere, C., De Jaeger, J., Strasser, G., Pogany, D., Gornik, E., : Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 163-166.

Lalinský, T., Rýger, I., Vanko, G., Tomáška, M., Kostič, I., Haščík, Š., Vallo, M., : AlGaN/GaN based SAW-HEMT structures for chemical gas sensors, Procedia Engn. 5 (2010) 152-155.

Laurenčíková, A., Sojková, M., Chromik, Š., Štrbik, V., Kostič, I., : Tl-based patterned superconducting structures: fabrication and study. Supercond. Sci Technol. 23 (2010) 045007.

Liday, J., Vogrinčič, P., Hotový, I., Bonanni, A., Sitter, H., Lalinský, T., Vanko, G., Řeháček, V., Breza, J., Ecke, G., : Ohmic contacts to p-GaN using Au/Ni-Mg-O metallization. J. Electr. Engn. 61 (2010) 378-381.

Maroldt, S., Wiegner, D., Vitanov, S., Palankovski, V., Quay, R., Ambacher, O., : Efficient AlGaN/GaN linear and digital-switch-mode power amplifiers for operation at 2 GHz IEICE Trans. Electr. E93C (2010) 1238-1244. (Not IEE SAS).

Martaus, J., Cambel, V., Gregušová, D., Kúdela, R., Fedor, J., : 50-nm local anodic oxidation technology of semiconductor heterostructures. J. Nanosci Nanotechnol. 10 (2010) 4448-4453.

Mészárosová, M., Kováčiková, Z., Závišová, V., Koneracká, M., Timko, M., Džarová, A., Kopčanský, P., Vávra, I., Čiampor, F., Gábelová, A., : Účinok magnetických nanočastíc na biologickú aktivitu ľudských alveolárnych buniek A549. In: Súťaž mladých onkológov. Bratislava: Nadácia Výskum rakoviny, 2010. ISBN 978-80-970403-6-9. S. 87-91.

Mijatovic, N., Abrahamsen, A., Traeholt, C., Seiler, E., Henriksen, M., Zermeno, V., Pedersen, N., : Superconducting generators for wind turbines: Design considerations,. J. Phys.: Conf. Series 234 (2010) 032038. (Not IEE SAS).

Mikulics, M., Stoklas, R., Dadgar, A., Gregušová, D., Novák, J., Grützmacher, D., Krost, A., Kordoš, P., : InAlN/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAlN. Applied Phys. Lett. 97 (2010) 173505.

Mitróová, Z., Tomašovičová, N., Lancz, G., Kováč, J., Vávra, I., Kopčanský, P., : Preparation and characterization of carbon nanotubes functionalized by magnetite nanoparticles. In: NANOCON 2010. Ostrava: TANGER Ltd., 2010. ISBN 978-80-87294-19-2. P. 88-392.

Mitróová, Z., Koneracká, M., Tomašovičová, N., Timko, M., Jadzyn, J., Vávra, I., Éber, N., Fodor-Csorba, K., Tóth-Katona, T., Vajda, A., Kopčanský, P., : Structural transitions in nematic liquid crystals doped with magnetite functionalized single walled carbon nanotubes. Phys. Procedia 9 (2010) 41-44.

Nemec, M., Jurkovič, M., Harmatha, L., Mokryš, P., Weber, B., Písečný, P., Fröhlich, K., : Characterization of MOS structures by conductance method. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 150-153.

Neubauer, E., Kitzmantel, M., Hulman, M., Angerer, P., : Potential and challenges of metal-matrix-composites reinforced with carbon nanofibers and carbon nanotubes. Comp. Sci Technol. 70 (2010) 2228–2236. (Not IEE SAS).

Novák, J., Vávra, I., Križanová, Z., Hasenöhrl, S., Šoltýs, J., Reiffers, M., Štrichovanec, P., : Dependence of Curie temperature on surface strain in InMnAs epitaxial structures. Applied Surface Sci 256 (2010) 5672-5675.

Novák, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Vávra, I., : Study of the growth and structural properties of InMnAs dots grown on high-index surfaces by MOVPE. Mater. Sci Semicond. Proc. 13 (2010) 167-172.

Nurgaliev, T., Mateev, E., Blagoev, B., Miteva, S., Neshkov, L., Štrbik, V., Uspenskaya, L., Beňačka, Š., Chromik, Š., Nedkov, I., : YBCO and LSMO nano-films and sandwiches prepared by magnetron sputtering, J. Phys.: Conf. Ser. 234 (2010) 012029.

Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Schmid, M., Tóth, L., Pecz, B., Carlin, J., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., Kuzmík, J., : Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors. Applied Phys. Lett. 96 (2010) 263515.

Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Carlin, J., Gonschorek, M., Grandjean, N., Vincze, A., Tóth, L., Pecz, B., Strasser, G., Pogany, D., Kuzmík, J., : Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6 Japan. J. Applied Phys. 49 (2010) 116506.

Ostermaier, C., Ahn, S., Potzger, K., Helm, M., Kuzmík, J., Pogany, D., Strasser, G., Hahn, S., Lee, J., : Study of Si implantation into Mg-doped GaN for MOSFETs, Phys. Status Solidi C 7 (2010) 1964–1966.

Osvald, J., : Influence of interface states on C-V characteristics of AlGaN/GaN heterostructures. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 167-170.

Osvald, J., Lalinský, T., Vanko, G., Haščík, Š., Vincze, A., : C–V characterization of SF6 plasma treated AlGaN/GaN heterostructures. Microelectr. Engn. 87 (2010) 2208-2210. (VEGA-2-0163-09).

Osvald, J., Lalinský, T., Vanko, G., Haščík, Š., Vincze, A., : C–V analysis of rapidly thermal annealed SF6 plasma treated AlGaN/GaN heterostructures. Applied Surface Sci 257 (2010) 1254-1256.

Perný, M., Šály, V., Huran, J., : Elektrické vlastnosti nanokryštalického SiC tvoriaceho súčasť štruktúry MSM, Energetika 60 (2010) 654-657.

Perný, M., Šály, V., Huran, J., : Material properties of SiC and its application for photovoltaic devices. In: DISEE 2010. Ed. M. Váry. Bratislava: STU 2010. ISBN: 978-80-227-3366-3. P. 182-185.

Pinčík, E., Kobayashi, H., Rusnák, J., Kim, W., Brunner, K., Malinovsky, L., Matsumoto, T., Imamura, K., Jergel, M., Takahashi, M., Higashi, Y., Kučera, M., Mikula, M., : On ultra-thin oxide/Si and very-thin oxide/Si structures prepared by wet chemical process. Applied Surface Sci 256 (2010) 5757-5764.

Pinčík, E., Kobayashi, H., Brunner, K., Takahashi, M., Kučera, M., Rusnák, J., Jergel, M., : On electrical, optical and structural properties of different Si-based structures prepared on a-Si:H/c-Si, porous silicon/c-Si and c-Si, Metallurgical Analysis 30 Suppl. 1 (2010) 80-85.

Plecenik, A., Tomasek, M., Plecenik, T., Truchly, M., Noskovic, J., Zahoran, M., Roch, T., Belogolovskij, M., Španková, M., Chromik, Š., Kúš, P., : Studies of resistance switching effects in metal/YBa2Cu3O7−x interface junctions. Applied Surface Sci 256 (2010) 5684-5687.

Polák, M., Mozola, P., : A flat cable with resistively joined YBCO stripes. Supercond. Sci Technol. 23 (2010) 025025.

Rosová, A., Kováč, P., Hušek, I., Melišek, T., Kopera, Ľ., Šmatko, V., Vávra, I., : Difúzia materiálu v supravodivých kábloch analyzovaná pomocou zariadenia Quanta 3D, Technika 8 (2010) 48-49.

Rostila, L., Grasso, G., Demenčík, E., Tumino, A., Brisigotti, S., Kováč, P., : Low field critical current density of titanium sheathed magnesium diboride wires, J. Phys.: Conf. Series 234 (2010) 022029.

Rýger, I., Lalinský, T., Vanko, G., Tomáška, M., Kostič, I., Haščík, Š., Vallo, M., : HEMT-SAW structures for chemical gas sensors in harsh environment In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 131-134.

Safran, S., Gömöry, F., Gencer, A., : AC loss in stacks of Bi-2223/Ag tapes modified with ferromagnetic covers at the edges. Supercond. Sci Technol. 23 (2010) 105003.

Safran, S., Vojenčiak, M., Gencer, A., Gömöry, F., : Critical current and AC loss of DI-BSCCO tape modified by the deposition of ferromagnetic layer on edges. IEEE Trans. Applied Supercond. 20 (2010) 2294-2300.

Seiler, E., Zirngibl, T., Mijatovic, N., Traeholt, C., Christensen, J., Abrahamsen, A., : AC loss in superconducting wires operating in a wind turbine like generator,. J. Phys.: Conf. Series 234 (2010) 032051.

Schlachter, S., Braun, U., Drechsler, A., Goldacker, W., Holúbek, T., Kling, A., Schmidt, C., : Cabling of thin MgB2 strands for high-current conductors with reduced AC losses, AIP Conf. Proc. 1219 (2010) 302-309. (Not IEE SAS).

Soloviov, M., Polák, M., Vojenčiak, M., Gömöry, F., : Improving the numerical model for high temperature coated conductors using the Hall-probe measurement. J. Phys.: Conf. Series 234 (2010) 022035.

Srnánek, R., Jakabovič, J., Dobročka, E., Irmer, G., Heinemeyer, U., Broch, K., Schreiber, F., Vincze, A., Machovic, V., Kováč, J., Donoval, D., : Evidence of pentacene bulk and thin film phase transformation into an orthorhombic phase by iodine diffusion. Chemical Phys. Lett. 484 (2010) 299-303.

Stenvall, A., Mikkonen, R., Kováč, P., : Comparison of 1D, 2D and 3D quench onset simulations. Physica C 470 (2010) 2047-2050.

Stoklas, R., Gregušová, D., Blaho, M., Kordoš, P., Tajima, M., Hashizume, T., : Preparation and properties of AlGaN/GaN MOS-HFETs with atomic layer deposited Al2O3 as gate oxide. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 155-158.

Stuchlíková, Ľ., Šebok, J., Rybár, J., Petruš, M., Nemec, M., Harmatha, L., Benkovská, J., Kováč, J., Škriniarová, J., Lalinský, T., Paszkiewicz, R., Tlaczala, M., : Investigation of deep energy levels in heterostructures based on GaN by DLTS. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 135-138.

Stuchlíková, Ľ., Šebok, J., Petruš, M., Harmatha, L., Benkovská, J., Kováč, J., Škriniarová, J., Lalinský, T., Paszkiewicz, R., Tlaczala, M., : Deep energy levels in Al0,19Ga0,81N/GaN single-quantum-well structures . In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 158-161.

Šmatko, V., Golovanov, V., Liu, C., Kiv, A., Fuks, D., Donchev, I., Ivanovskaya, M., : Structural stability of In2O3 films as sensor materials J. Mater. Sci: Mater. Electron. 21 (2010) 360-363.

Šouc, J., Vojenčiak, M., Gömöry, F., : Experimentally determined transport and magnetization ac losses of small cable models constructed from YBCO coated conductors. Supercond. Sci Technol. 23 (2010) 045029. (VEGA 2/0172/09).

Štrbik, V., Beňačka, Š., Mateev, E., Blagoev, B., Nurgaliev, T., Miteva, S., : Study of the long-range proximity effect in LSMO/YBCO bilayers, J. Phys.: Conf. Ser. 234 (2010) 012044.

Štrbik, V., Španková, M., Reiffers, M., Kováč, J., Beňačka, Š., : Transport and magnetic properties of epitaxial LSMO thin films grown on MgO single-crystal substrates, J. Phys.: Conf. Series 223 (2010) 012027.

Šušlik, Ľ., Pudiš, D., Škriniarová, J., Kováč, J., Kováč, J., Kubicová, I., Martinček, I., Jakabovič, J., Novák, J., : Light emitting diode with 2D PhC structure in the surface analysed by NSOM. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 21-24.

Takács, S., : AC losses in superconductors shielded by a normal metal or another superconductor. Supercond. Sci. Technol. 23 (2010) 065023. (VEGA 2/0172/09).

Ťapajna, M., Simms, R., Pei, Y., Mishra, U., Kuball, M., : On the identification of trap location in AlGaN/GaN HEMTs during electrical stress. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 119-122. (Not IEE SAS).

Ťapajna, M., Simms, R., Faqir, M., Kuball, M., Pei, Y., Mishra, U., : Identification of electronic traps in AlGaN/GaN HEMTs using UV light-assisted trapping analysis. In: Inter. Reliability Phys. Symp. (2010) P. 152- 155. (Not IEE SAS).

Ťapajna, M., Paskaleva, A., Atanassova, E., Dobročka, E., Hušeková, K., Fröhlich, K., : Gate oxide thickness dependence of the leakage current mechanism in Ru/Ta2O5/SiON/Si structures Semicond. Sci Technol. 25 (2010) 075007.

Ťapajna, M., Mishra, U., Kuball, M., : Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress. Applied Phys. Lett. 97 (2010) 023503. (not IEE SAS).

Ťapajna, M., Simms, R., Pei, Y., Mishra, U., Kuball, M., : Integrated optical and electrical analysis: identifying location and properties of traps in AlGaN/GaN HEMTs during electrical stress. IEEE Electron Device Lett. 31 (2010) 662. (not IEE SAS).

Telek, P., Hasenöhrl, S., Šoltýs, J., Vávra, I., Držík, M., Novák, J., : Design, preparation and properties of spin-LED structures based on InMnAs. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 175-178.

Terzieva, S., Vojenčiak, M., Pardo, E., Grilli, F., Drechsler, A., Kling, A., Kudymow, A., Gömöry, F., Goldacker, W., : Transport and magnetization ac losses of ROEBEL assembled coated conductor cables: measurements and calculations. Supercond. Sci Technol. 23 (2010) 014023.

Ueda, H., Gendiar, A., Nishino, T., : A classical background for the wave function prediction in the infinite system density matrix renormalization group Method J. Phys. Soc Japan 79 (2010) 044001.

Vallo, M., Lalinský, T., Vanko, G., Držík, M., Haščík, Š., Rýger, I., Kostič, I., : AlGaN/GaN C-HEMT for piezoelectric MEMS stress sensor appliocations. In.: MME 2010. Eds. L. Abelmann et al. Enschede: Univ. Twente 2010. ISBN 978-90-816737-1-6. P. 56-59.

Vanko, G., Držík, M., Vallo, M., Lalinský, T., Kutiš, V., Stančík, S., Rýger, I., Kostič, I., : AlGaN/GaN C-HEMT structures for dynamic stress detection. Procedia Engn. 5 (2010) 1405-1408.

Viljamaa, J., Kováč, P., Hušek, I., Melišek, T., Štrbik, V., Dobročka, E., : Effect of fabrication route on density and connectivity of MgB2 filaments J. Phys.: Conf. Series 234 (2010) 022041.

Vitanov, S., Palankovski, V., Maroldt, S., Quay, R., : High-temperature modeling of AlGaN/GaN HEMTs. Solid-State Electr. 54 (2010) SI1105-1112. (Not IEE SAS).

Zápražný, Z., Korytár, D., Dubecký, F., Áč, V., Lekki, J., Stachura, Z., Bielecki, J., Mudroň, J., : First experience with imaging using microfocus x-ray source. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 240-243.

Zápražný, Z., Korytár, D., Dubecký, F., Áč, V., Stachura, Z., Lekki, J., Bielecki, J., Mudroň, J., : Experience with imaging by using of microfocus x-ray source, J. Electrical Engn. 61 (2010) 287-290.

Zaťko, B., Dubecký, F., Boháček, P., Nečas, V., Ryć, L., : Evaluation of semi-insulating GaAs detector in soft x-ray region. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 236-239.

Zaťko, B., Dubecký, F., Boháček, P., Nečas, V., Ryć, L., : Detection of soft X-rays using semi-insulating GaAs detector. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 219-222.

Závišová, V., Tomašovičová, N., Kováč, J., Koneracká, M., Kopčanský, P., Vávra, I., : Synthesis and characterisation of rod-like magnetic nanoparticles. In: NANOCON 2010. Ostrava: TANGER Ltd., 2010. ISBN 978-80-87294-19-2. P. 19-20.

Závišová, V., Tomašovičová, N., Kováč, J., Koneracká, M., Kopčanský, P., Vávra, I., : Synthesis and characterisation of rod-like magnetic nanoparticles In: NANOCON 2010. Ostrava: TANGER Ltd., 2010. P. 330-335. ISBN 978-80-87294-19-2..