2012

Aarik, J., Hudec, B., Hušeková, K., Rammula, R., Kasikov, A., Arroval, T., Uustare, T., Fröhlich, K., : Atomic layer deposition of high-permittivity TiO2 dielectrics with low leakage current on RuO2 in TiCl4-based processes. Semicond. Sci Technol. 27 (2012) 074007. (APVV 0509-10). (VEGA 2-0147-11).

Azimi, H., Fournier, D., Wirix, M., Dobročka, E., Ameri, T., Machui, F., Rodman, S., Dennler, G., Scharber, M., Hingerl, K., Loos, J., Brabec, C., Morana, M., : Nano-morphology characterization of organic bulk heterojunctions based on mono and bis-adduct fullerenes. Organic Electr. 13 (2012) 1315-1321.

Babchenko, O., Verveniotis, E., Hruska, K., Ledinsky, M., Kromka, A., Rezek, B., : Direct growth of sub-micron diamond structures. Vacuum 86 (2012) SI 693-695. (Not IEE SAS).

Barth, C., Weiss, P., Vojenčiak, M., Schlachter, S., : Electro-mechanical analysis of Roebel cables with different geometries,. Supercond. Sci Technol. 25 (2012) 025007. (Not IEE SAS).

Brunner, K., Pinčík, E., Kobayashi, H., Kučera, M., Takahashi, M., : Photoluminescence spectra of non homogeneous a-Si:H layers. Metallurg. Anal. 32 (2012) 43.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Kobzev, A., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Kaminskii, V., Tuleushev, Y., Wozniak, J., : Measurement of astrophysical S factors and electron screening potentials for d(d,n)3He reaction in ZrD2, TiD2, D2D, and CD2 targets in the ultralow energy region using plasma accelerators. Phys. Atomic Nuclei 75 (2012) 53-62.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Kobzev, A., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Kaminskii, V., Tuleushev, Y., Wozniak, J., : Investigation of temperature dependence of neutron yield and electron screening potentials for d(d,n)3He reaction proceeding in deuterides ZrD2 and TiD2. Phys. Atomic Nuclei 75 (2012) 913-922.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Kobzev, A., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Kaminskii, V., Tuleushev, Y., Wozniak, J., : Measurement of astrophysical S-factors and electron screening potentials for View the MathML source reaction in ZrD2, TiD2 and TaD0.5 targets in the ultralow energy region using plasma accelerator. Nuclear Phys. A 889 (2012) 93-104.

Cambel, V., Karapetrov, G., : Micromagnetic simulations of pac-man-like nanomagnets for memory applications. J. Nanosci Nanotechnol. 12 (2012) 7422-7425. (CENTE II).

Cirák, J., Sokolský, M., Weis, M., Dobročka, E., : The Langmuir monolayer: an efficient model for studying interfacial properties of biomembranes. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 157-160. (not IEE SAS).

Čičo, K., Gregušová, D., Kuzmík, J., Jurkovič, M., Alexewicz, A., di Forte Poisson, M., Pogany, D., Strasser, G., Delage, S., Fröhlich, K., : Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation. Solid-State Electr. 67 (2012) 74-78. (MORGaN).

Dubecký, F., Gombia, E., Ferrari, C., Zaťko, B., Vanko, G., Baldini, M., Kováč, J., Baček, D., Kováč, P., Hrkút, P., Nečas, V., : Characterization of epitaxial 4H-SiC for photon detectors. J. Instrument. 7 (2012) P09005. (VEGA 2/0192/10). (VEGA 2/0153/10). (APVV 0450-10).

Dubecký, F., Hubík, P., Gombia, E., Kindl, D., Dubecký, M., Mudroň, J., Boháček, P., Sekáčová, M., : Metal/SI GaAs/Metal systems: Demonstration of unpinning of the Fermi level at the interface. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 143-146.

Dubecký, F., Dubecký, M., : Comment on “Simulation of Schottky and Ohmic contacts on CdTe” [J. Appl. Phys. 109, 014509 (2011)]. J. Applied Phys. 111 (2012) 026102. (APVV 0450-10).

Dubecký, F., Gombia, E., Vanko, G., Ferrari, C., Zaťko, B., Kováč, P., Baček, D., Baldini, M., Ryć, L., Nečas, V., : Surface barrier 4H-SiC soft X-ray detector for hot plasmas diagnostic. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 247-250.

Dubecký, F., Príbytný, P., Vanko, G., Zaťko, B., Gombia, E., Baldini, M., Hrkút, P., Nečas, V., Donoval, D., : Novel concepts of soft X-ray detector based on semi-insulating GaAs. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 29-32.

Dubecký, M., Su, H., : Magnetism in thiolated gold model junctions. J. Phys. Chem. C 116 (2012) 17714–17720.

Dzuba, J., Lalinský, T., Vanko, G., Vallo, M., Rýger, I., Kutiš, V., Královič, V., : Modeling and simulation of AlGaN/GaN piezoelectric MEMS pressure sensor. In: 13th Mechatronics Forum Inter. Conf. – Mechatronics 2012. Linz 2012. P. 773-778.

Edwards, M., Le Boulbar, E., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C., Allsopp, D., : Pressure and temperature dependence of GaN/AlGaN HEMT based sensors on a sapphire membrane,. Phys. Status Solidi c 9 (2012) 960-963. (MORGaN).

Elschner, S., Kudymow, A., Brand, J., Fink, S., Goldacker, W., Grilli, F., Noe, M., Vojenčiak, M., Hobl, A., Bludau, M., Jänke, C., Krämer, S., Bock, J., : ENSYSTROB – Design, manufacturing and test of a 3-phase resistive fault current limiter based on coated conductors for medium voltage application,. Physica C 482 (2012) 98–104. (Not IEE SAS).

Florovič, M., Kováč, J., Sciana, B., Radcziewicz, D., Pucucki, D., Zborowska-Lindert, I., Tlaczala, M., Vávra, I., : Low temperature investigation of electrical and optical properties of InGaAsN/Gas QW Schottky barrier photodetectors. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 163-166.

Flükiger, R., Hossain, M., Kulich, M., Senatore, C., : Technical aspects of cold high pressure densification (CHPD) on long lengths of in situ MgB2 wires with enhanced j(c) values, Advan. Cryogenic Engn. 58 (2012) 353-362. (Not IEE SAS).

Fox, A., Mikulics, M., Winden, A., Hardtdegen, H., Gregušová, D., Adam, R., Sobolewski, R., Marso, M., Grützmacher, D., Kordoš, P., : Towards future III-nitride based THz OEICs in the UV range. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 191-194.

Fröhlich, K., Hudec, B., Ťapajna, M., Hušeková, K., Rosová, A., Eliáš, P., Aarik, J., Rammula, R., Kasikov, A., Arroval, T., Aarik, L., Murakami, K., Rommel, M., Bauer, A., : TiO2-based metal-insulator-metal structures for future DRAM storage capacitors ECS Transactions 50 (2012) 79-87.

Fröhlich, K., Mičušík, M., Dobročka, E., Šiffalovič, P., Gucmann, F., Fedor, J., : Properties of Al2O3 thin films grown by atomic layer deposition. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 171-174.

Frolek, L., Seiler, E., Šouc, J., Pardo, E., : Properties of impregnated superconducting coils made from YBCO coated conductor using different technology of impregnation. In: 12th CRYOGENICS 2012 IIR Inter. Conf. Dresden 2012. Praha: Icaris Ltd. 2012. ISSN: 0151-1637. CD-ROM.

Frolek, L., Šouc, J., : Comparison of AC transport current loss in different YBCO coated conductor tapes measured at 4.2K. Phys. Procedia 36 (2012) 1528-1533. (VEGA 2/0172/09).

Fuks, D., Kiv, A., Shapiro, D., Golovanov, V., Šmatko, V., Donchev, I., : Degradation processes in surface layers of indium oxide. IEEE Trans. Device Mater. Reliab. 12 (2012) 133-138.

Gömöry, F., : Electromagnetic modeling of high temperature superconductor (HTS) materials and applications. In: High temperature superconductors (HTS) for energy applications. Ed. Z. Melhem. Oxford: Woodhead Publ. Ltd. 2012. ISBN 978-0-85709-012-6. P. 216-256.

Gömöry, F., Soloviov, M., Šouc, J., Navau, C., Camps, J., Sanchez, A., : Experimental realization of a magnetic cloak. Science 335 (2012) 1466-1468.

Gömöry, F., Inanir, F., : AC losses in coil wound from round wire coated by a superconducting layer. IEEE Trans. Applied Supercond. 22 (2012) 4704704.

Grau, A., Baumbach, T., Casalbuoni, S., Gerstl, S., Hagelstein, M., Holúbek, T., de Jauregui, D., : Cryogen-free setup for local and integral magnetic field measurements of superconducting undulator coils,. IEEE Trans. Applied Supercond. 22 (2012) 9001504. (Not IEE SAS).

Gregušová, D., Kúdela, R., Stoklas, R., Blaho, M., Gucmann, F., Fedor, J., Kordoš, P., : The influence of an AlOx film in-situ deposited on the GaAs-based HFETs properties. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 107-110.

Grinenko, V., Fuks, D., Nenkov, K., Stiehler, C., Vojenčiak, M., Reis, T., Oswald, B., Holzapfel, B., : Transport AC losses of YBCO pancake coils wound from parallel connected tapes. Supercond. Sci Technol. 25 (2012) 075006. (NESPA).

Holúbek, T., Casalbuoni, S., Gerstl, S., Grau, A., de Jauregui, D., Klaeser, M., Schneider, T., Motowidlo, L., : Possible application of NbTi artificial pinning centers wire for insertion devices,. Phys. Procedia 36 (2012) 1098-1102. (Not IEE SAS).

Holúbek, T., Baumbach, T., Casalbuoni, S., Gerstl, S., Grau, A., Hagelstein, M., de Jauregui, D., Boffo, C., Walter, W., : A superconducting switch for insertion devices with variable period length,. Phys. Procedia 36 (2012) 1093-1097. (Not IEE SAS).

Huran, J., Kadlečíková, M., Zaťko, B., Feschenko, A., Kobzev, A., Vančo, L., Nozdrin, M., Kleinová, A., Kováčová, E., : Photocathodes based on diamond like carbon films prepared by reactive magnetron sputtering and PECVD technology. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 263-266.

Huran, J., Kučera, M., Boháček, P., Kobzev, A., Kleinová, A., Sekáčová, M., Kováčová, E., : Electron cyclotron resonance plasma technology of silicon carbon nitride thin films. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 267-270.

Huran, J., Valovič, A., Kučera, M., Kleinová, A., Kováčová, E., Boháček, P., Sekáčová, M., : Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: properties. J. Electr. Engn. 65 (2012) 333-335. (CENTE II). (APVV 0713-07). (VEGA 2/0192/10).

Huran, J., Balalykin, N., Shirkov, G., Boháček, P., Kobzev, A., Valovič, A., Malinovsky, L., Sekáčová, M., : Characterization of nanocrystalline diamond/amorphous composite carbon films prepared by PECVD technology. Phys. Procedia 32 (2012) 875-879. (APVV 0713-07). (APVV 51-0459-06). (VEGA 2/0192/10).

Huran, J., Valovič, A., Kobzev, A., Balalykin, N., Kučera, M., Haščík, Š., Malinovsky, L., Kováčová, E., : Stuctural and physical characteristics of PECVD nanocrystalline silicon carbide thin films. Phys. Procedia 32 (2012) 303-307. (APVV 0713-07). (VEGA 2/0192/10).

Chand, S., Kaushal, P., Osvald, J., : Effect of inverse doped surface layer in Schottky barrier modification: a numerical study. J. Electr. Mater. 41 (2012) 3387-3392.

Chromik, Š., Lalinský, T., Dobročka, E., Gierlowski, P., Štrbik, V., Laurenčíková, A., Španková, M., : Mutual compatibility of AlGaN HEMT and HTS (YBCO) technology. Supercond. Sci Technol. 25 (2012) 035008. (VEGA 2-0164-11). (VEGA 2/0144/10). (VEGA-2-0163-09). (APVV 0450-10). (APVV 51-040605).

Ižák, T., Kromka, A., Babchenko, O., Ledinsky, M., Hruska, K., Verveniotis, E., : Comparative study on dry etching of polycrystalline diamond thin films. Vacuum 86 (2012) SI 799-802. (Not IEE SAS).

Ižák, T., Babchenko, O., Varga, M., Potocký, Š., Kromka, A., : Low temperature diamond growth by linear antenna plasma CVD over large area. Phys. Status Solidi B 249 (2012) 2600-2603. (Not IEE SAS).

Janovec, J., Skarba, M., Grgač, P., Gömöry, F., Kusý, M., Gogola, P., : Progresívne materiály a technológie Bratislava: STU 2012. ISBN 978-80-227-3648-0. 299 s..

Jurkovič, M., Gregušová, D., Haščík, Š., Blaho, M., Čičo, K., Palankovski, V., Carlin, J., Grandjean, N., Kuzmík, J., : Polarization engineered normally-off GaN/InAlN/AlN/GaN HEMT In: Inter. Workshop on Nitride Semicond. 2012 – IWN. Sapporo 2012..

Jurkovič, M., Gregušová, D., Haščík, Š., Blaho, M., Molnár, M., Palankovski, V., Donoval, D., Carlin, J., Grandjean, N., Kuzmík, J., : GaN/InAlN/AlN/GaN normally-off HEMT with etched access region. In: WOCSDICE-EXMATEC 2012.Eds. Y. Cordier and J.-Y. Duboz. Island of Porquerolles: CRHEA & CNRS 2012.

Kario, A., Haessler, W., Rodig, C., Schubert, M., Kováč, P., Melišek, T., Nast, R., Goldacker, W., Holzapfel, B., : High energy milled ex situ MgB2 as precursor for superconducting tapes without critical current anisotropy. J. Supercond. Novel Magn. 25 (2012) 2337-2341. (NESPA).

Kario, A., Grinenko, V., Kauffmann, A., Haessler, W., Rodig, C., Kováč, P., Melišek, T., Holzapfel, B., : Isotropic behavior of critical current for MgB2ex situ tapes with 5 wt.% carbon addition. Physica C 483 (2012) 222-224. (NESPA).

Kopera, Ľ., Kováč, P., Hušek, I., : Calculated and measured normal state resistivity of 19-filament MgB2/Ti/Cu/stainless steel wire. Supercond. Sci Technol. 25 (2012) 025021..

Kordoš, P., Škriniarová, J., Chvála, A., Florovič, M., Kováč, J., Donoval, D., : Electrical and optical characterization of Ni/Al0.3Ga0.7N/GaN Schottky barrier diodes. J. Electronic Mater. 41 (2012) 3017-3020.

Kordoš, P., Mikulics, M., Stoklas, R., Čičo, K., Dadgar, A., Grützmacher, D., Krost, A., : Thermally oxidized InAlN of different compositions for InAlN/GaN heterostructure field-effect transistors. J. Electronic Mater. 41 (2012) 3013-3016. (VEGA 2/0098/09). (APVV LPP-0162-09).

Kordoš, P., Fox, A., Kúdela, R., Mikulics, M., Stoklas, R., Gregušová, D., : GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD. Semicond. Sci Technol. 27 (2012) 115002. (VEGA 2/0081/09). (VEGA 2/0098/09). (APVV LPP-0162-09).

Kordoš, P., Kúdela, R., Stoklas, R., Čičo, K., Mikulics, M., Gregušová, D., Novák, J., : Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition. Applied Phys. Lett. 100 (2012) 142113. (APVV LPP-0162-09).

Kováč, J., Šatka, A., Chvála, A., Donoval, D., Kordoš, P., Delage, S., : Gate leakage current on GaN-based mesa- and planar-type heterostructure field-effect transistors. Microelectron. Reliability 52 (2012) 1323-1327. (MORGaN).

Kováč, P., Kulich, M., Haessler, W., Herrmann, M., Melišek, T., Reissner, M., : Properties of MgB2 wires made of oxidized powders. Physica C 477 (2012) 20-23. (APVV 0495-10).

Kováč, P., Hušek, I., Melišek, T., : Improved current density of filamentary MgB2 wire by two-stage formation. Physica C 475 (2012) 43-45. (APVV 0495-10).

Kováč, J., Šouc, J., Kováč, P., : Experimental study of the AC magnetization loss in MgB2 superconducting wires at different temperatures. Physica C 475 (2012) 1-4.

Kováč, P., Kopera, Ľ., : Electromechanical properties of filamentary MgB2 wires. IEEE Trans. Applied Supercond. 22 (2012) 8400106.

Kováč, P., Melišek, T., Kopera, Ľ., Kováč, J., Hušek, I., : Selected properties of GlidCop® sheathed MgB2 wires. Supercond. Sci Technol. 25 (2012) 095008.

Kováč, J., Čaplovičová, M., Búc, D., Brath, T., Kováč, J., Eliáš, P., Hasenöhrl, S., Novák, J., : Properties of GaP/ZnO heterostructures for photovoltaics. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 263-266.

Križanová, Z., Vávra, I., Hasenöhrl, S., Novák, J., : TEM analysis of InMnAs layers and dots prepared by low pressure MOVPE. Vacuum 86 (2012) 657-660. (VEGA 2/0081/09). (VEGA 2/6100/26).

Kromka, A., Babchenko, O., Ižák, T., Hruska, K., Rezek, B., : Linear antenna microwave plasma CVD deposition of diamond films over large areas. Vacuum 86 (2012) SI776-779. (Not IEE SAS).

Krupa, I., Cecen, V., Boudenne, A., Križanová, Z., Vávra, I., Srnánek, R., Radnóczi, G., : Mechanical properties and morphology of composites based on the EVA copolymer filled with expanded graphite,. Polymer-Plast. Technol. Engn. 51 (2012) 1388-1393. (APVV 0478-07).

Kubicová, I., Pudiš, D., Škriniarová, J., Kováč, J., Kováč, J., Jakabovič, J., Šušlik, Ľ., Novák, J., : LED with 2D irregular structure in the surface prepared by NSOM lithography. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 251-254.

Kučera, M., Kúdela, R., Novák, J., : Kučera, M., Kúdela R., and Novák, J.: Photoreflectance study of the role of a thin AlOx layer in a GaAs surface passivation and the Schottky barrier forming. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 231-234.

Kúdela, R., Gregušová, D., Stoklas, R., : Devices with Te-doped InGaP layers. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 111-114.

Kulha, P., Babchenko, O., Kromka, A., Husák, M., Haenen, K., : Design and fabrication of piezoresistive strain gauges based on nanocrystalline diamond layers. Vacuum 86 (2012) SI 689-692. (Not IEE SAS).

Kuliffayová, M., Krajči, Ľ., Janotka, I., Šmatko, V., : Thermal behaviour and characterization of cement composites with burnt kaolin sand. J. Thermal Anal. Calorimetry 108 (2012) 425-432.

Kunzo, P., Lobotka, P., Micusik, M., Kováčová, E., : Palladium-free hydrogen sensor based on oxygen-plasma-treated polyaniline thin film. Sensors Actuators B 171-172 (2012) 838-845. (COST MP0902). (ITMS 26240220041).

Kutiš, V., Dzuba, J., Paulech, J., Murín, J., Lalinský, T., : MEMS piezoelectric pressure sensor-modelling and simulation. Procedia Engn. 48 (2012) 338-345. (APVV 0450-10).

Kutiš, V., Gálik, G., Královič, V., Rýger, I., Mojto, E., Lalinský, T., : Modelling and simulation of SAW sensor using FEM. Procedia Engn. 48 (2012) 332-337. (APVV 0450-10).

Kuzma, A., Weis, M., Flickyngerová, S., Jakabovič, J., Šatka, A., Dobročka, E., Chlpík, J., Cirák, J., Donoval, M., Telek, P., Uherek, F., Donoval, D., : Influence of surface oxidation on plasmon resonance in monolayer of gold and silver nanoparticles. J. Applied Phys. 112 (2012) 103531. (VEGA 2-0147-11).

Kuzmík, J., : N-polarity InN/GaN/InAlN high-electron-mobility transistors. Applied Phys. Express 5 (2012) 044101. (VEGA 2-0147-11). (APVV 0104-10).

Kuzmík, J., Vitanov, S., Dua, C., Carlin, J., Ostermaier, C., Alexewicz, A., Strasser, G., Pogany, D., Gornik, E., Grandjean, N., Delage, S., Palankovski, V., : Buffer-related degradation aspects of single and double-heterostructure quantum well InAlN/GaN high-electron-mobility transistors. Japan. J. Applied Phys. 51 (2012) 054102.

Kuzmík, J., : Material and device issues of InAlN/GaN heterostructures. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 45-50.

Lalinský, T., Hudek, P., Vanko, G., Dzuba, J., Kutiš, V., Srnánek, R., Choleva, P., Vallo, M., Držík, M., Matay, L., Kostič, I., : Micromachined membrane structures for pressure sensors based on AlGaN/GaN circular HEMT sensing device. Microelectron. Engn. 98 (2012) 578–581. (APVV 0655-07). (APVV 0450-10). (APVV 0199-10). (VEGA-2-0163-09).

Lalinský, T., Vanko, G., Vallo, M., Dobročka, E., Rýger, I., Vincze, A., : AlGaN/GaN high electron mobility transistors with nickel oxide based gates formed by high temperature oxidation. Applied Phys. Lett. 100 (2012) 092105. (MORGaN). (APVV 0450-10). (APVV 0199-10). (APVV 0655-07). (VEGA-2-0163-09).

Laurenčíková, A., Novotný, I., Kováč, J., Eliáš, P., Hasenöhrl, S., Novák, J., : GaP/ZnO nanowires with a radial pn heterojunction. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 115-118.

Mesárošová, M., Čiampor, F., Závišová, V., Koneracká, M., Ursínyová, M., Kozics, K., Tomašovičová, N., Hashim, A., Vávra, I., Križanová, Z., Hušeková, Z., Kubovčíková, M., Kopčanský, P., Timko, M., Gábelová, A., : The intensity of internalization and cytotoxicity of superparamagnetic iron oxide nanoparticles with different surface modifications in human tumor and diploid lung cells Neoplasma 59 (2012) 584-597.

Meško, M., Vretenár, V., Kotrusz, P., Hulman, M., Šoltýs, J., Skákalová, V., : Carbon nanowalls synthesis by means of atmospheric dcPECVD method. Phys. Status Solidi B 249 (2012) 2625–2628.

Mikolášek, M., Zhang, D., Vanko, G., Kováč, J., Zeman, M., Harmatha, L., : Impact of interface passivation on the band alignment of a-Si:H(n)/c-Si(p) heterostructure solar cells. In: Proc. 27th Europ. Photovoltaic Solar Energy Conf. and Exhibition. Frankfurt 2012. P. 1534-1537.

Mikulics, M., Hardtdegen, H., Gregušová, D., Sofer, Z., Šimek, P., Trellenkamp, S., Grützmacher, D., Lüth, H., Kordoš, P., Marso, M., : Non-uniform distribution of induced strain in gate recessed AlGaN/GaN structure evaluated by micro PL measurements. Semicond. Sci Technol. 27 (2012) 105008.

Mikulics, M., Fox, A., Marso, M., Grützmacher, D., Donoval, D., Kordoš, P., : Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate. Vacuum 86 (2012) 754-756.

Mikulics, M., Hardtdegen, H., Winden, A., Fox, A., Marso, M., Sofer, Z., Lüth, H., Grützmacher, D., Kordoš, P., : Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements. Phys. Status Solidi C 9 (2012) 911-914. (VEGA 2/0098/09).

Moereke, J., Ťapajna, M., Uren, M., Pei, Y., Mishra, U., Kuball, M., : Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability. Phys. Status Solidi A 209 (2012) 2646-2652.

Molnár, M., Donnarumma, G., Palankovski, V., Kuzmík, J., Donoval, D., Kováč, J., Selberherr, S., : Characterization, modeling and simulation of In0.12Al0.88N/GaN HEMTsP. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 190-194.

Molnár, M., Donnarumma, G., Palankovski, V., Kuzmík, J., Donoval, D., Kováč, J., Selberherr, S., : Electrothermal analysis of In0.12Al0.88N/GaN HEMTs. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 55-58.

Mruczkiewicz, M., Krawczyk, M., Mikhaylovskiy, R., Kruglyak, V., : Towards high-frequency negative permeability using magnonic crystals in metamaterial design. Phys. Rev. B 86 (2012) 024425. (Not IEE SAS).

Novák, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Stoklas, R., Laurenčíková, A., Mikulics, M., : Electrical and photoluminescence properties of individual GaP nanowires doped by zinc Phys. Status Solidi a 209 (2012) 2505-2509. (APVV 0301-10). (APVV LPP-0162-09). (VEGA 2/0081/09).

Novák, J., Novotný, I., Kováč, J., Eliáš, P., Hasenöhrl, S., Križanová, Z., Vávra, I., Stoklas, R., : Preparation of thin Ga-doped ZnO layers for core–shell GaP/ZnO nanowires. Applied Surface Sci 258 (2012) 7607-7611. (VEGA 2/0081/09). (APVV 0301-10).

Novák, J., Mikulics, M., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Vávra, I., Novotný, I., Kováč, J., : Photoluminescence of single GaP/ZnO core-shell nanowires. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 127-130.

Novotný, I., Tvarožek, V., Šutta, P., Netrvalová, M., Novák, J., Vávra, I., Eliáš, P., : Preparation of shell nanocrystalline Ga-doped ZnO ultra-thin films by sputtering. In: 28th Inter. Conf. Microelectr. Piscataway: IEEE, 2012. ISBN 978-1-4673-0235-7. P. 269-272.

Nurgaliev, T., Blagoev, B., Mateev, E., Štrbik, V., Beňačka, Š., Šmatko, V., Gaži, Š., Chromik, Š., : Planar homogeneity of the electrical properties of YBa2Cu3O7/La0.7Sr0.3MnO3 bi-layers. J. Phys.: Conf. Ser. 356 (2012) 012020. (VEGA 2/0144/10). (VEGA 2-0164-11).

Ondic, L., Babchenko, O., Varga, M., Kromka, A., Ctyroky, J., Pelant, I., : Diamond photonic crystal slab: Leaky modes and modified photoluminescence emission of surface-deposited quantum dots. Sci Rep. 2 (2012) 914. (Not IEE SAS).

Osvald, J., : Interface electron traps and capacitance characteristics of AlGaN/GaN. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 121-124.

Osvald, J., : Interface traps in insulator/AlGaN/GaN heterostructure capacitors. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 59-62.

Pal, S., Rana, B., Saha, S., Mandal, R., Hellwig, O., Romero-Vivas, J., Mamica, S., Klos, J., Mruczkiewicz, M., Sokolovskyy, M., Krawczyk, M., Barman, A., : Time-resolved measurement of spin-wave spectra in CoO capped [Co(t)/Pt(7 angstrom)](n-1) Co(t) multilayer systems. J. Applied Phys. 111 (2012) 07C507. (Not IEE SAS).

Palankovski, V., Donnarumma, G., Kuzmík, J., : Degradation study of single and double-heterojunction InAlN/GaN HEMTs by two-dimensional simulation ECS Transactions 50 (2012) 223-228.

Palankovski, V., Kuzmík, J., : A Promising new n++-GaN/InAlN/GaN HEMT concept for high-frequency applications ECS Transactions 50 (2012) 291-296.

Pardo, E., Šouc, J., Kováč, J., : AC loss in ReBCO pancake coils and stacks of them: modelling and measurement. Supercond. Sci Technol. 25 (2012) 035003. (ITMS 2624220028).

Pardo, E., Grilli, F., : Numerical simulations of the angular dependence of magnetication AC losses: coated conductors, Roebel cables and double pancake coils. Supercond. Sci Technol. 25 (2012) 014008. (CENTE II).

Perný, M., Šály, V., Mikolášek, M., Huran, J., : Characterization and electrical transport in a-SiC/c-Si heterojunction structure. EEA-Electrotehnica, Electronica, Automatica 60 (2012) 38 – 42.

Perný, M., Mikolášek, M., Šály, V., Huran, J., Országh, J., : Current transport mechanisms of amorphous n–doped silicon carbide/crystalline silicon heterostructure: impact of nitrogen dopation. In: 35th ISSE. Eds. M.Franz et al. Piscataway: IEEE 2012. ISBN 978-1-4673-2240-9. P. 25-30.

Pinčík, E., Kobayashi, H., Rusnák, J., Takahashi, M., Mikula, M., Kim, W., Kučera, M., Brunner, K., Jurečka, S., : Passivation of Si-based structures in HCN and KCN solutions. Applied Surface Sci 258 (2012) 8397-8405.

Pitel, J., Kováč, P., : Examination of an influence of winding geometry and operating temperature on basic parameters of superconducting coils made of MgB2 wire – theoretical analysis. Physica C 483 (2012) 101-108. (APVV 0495-10). (KCMTE).

Plecenik, T., Tomasek, M., Belogolovskij, M., Truchly, M., Gregor, M., Noskovic, J., Zahoran, M., Roch, T., Boylo, I., Španková, M., Chromik, Š., Kúš, P., Plecenik, A., : Effect of crystallographic anisotropy on the resistance switching phenomenon in perovskites. J. Applied Phys. 111 (2012) 056106.

Polák, M., Pardo, E., Mozola, P., Šouc, J., : Magnetic field in the winding of an YBCO pancake coil: experiments and calculations. IEEE Trans. Applied Supercond. 22 (2012) 6600204.

Potocký, Š., Babchenko, O., Hruska, K., Kromka, A., : Linear antenna microwave plasma CVD diamond deposition at the edge of no-growth region of C-H-O ternary diagram. Phys. Status Solidi B 249 (2012) 2612-2615. (Not IEE SAS).

Precner, M., Gregušová, D., Šoltýs, J., Fedor, J., Gucmann, F., Tóbik, J., Kúdela, R., Cambel, V., : Nucleation and annihilation of magnetic vortices in Pacman-like nanodots observed by micro-Hall probes. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 87-90.

Príbytný, P., Dubecký, F., Donoval, D., Chvála, A., Marek, J., Molnár, M., : Analysis and optimization of silicon detector supported by electro-physical modeling and simulation. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 349-352.

Pudiš, D., Šušlik, Ľ., Škriniarová, J., Kováč, J., Jakabovič, J., Kubicová, I., Kováč, J., Novák, J., Haščík, Š., : Effect of 2D PhC structure patterned in LED surface on emission properties. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 25-28.

Pudiš, D., Kubicová, I., Škriniarová, J., Kováč, J., Jakabovič, J., Novák, J., Šušlik, Ľ., Haščík, Š., : 2D irregular structures patterning and analysis of LED by NSOM. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 167-170.

Reissner, M., Proschofsky-Spindler, D., Hušek, I., Kulich, M., Kováč, P., : Activation energy distribution of MgB2 wires. Phys. Procedia 36 (2012) 1582-1587.

Rodière, P., Klein, T., Lemberger, L., Hasselbach, K., Demuer, A., Kačmarčík, J., Wang, Z., Luo, H., Lu, X., Wen, H., Gucmann, F., Marcenat, C., : Scaling of the physical properties in Ba(Fe,Ni)2As2 single crystals: Evidence for quantum fluctuations. Phys. Rev. B 85 (2012) 214506.

Roch, T., Dobročka, E., Mikula, M., Pidík, A., Durina, P., Haidry, A., Plecenik, T., Truchly, M., Grančič, B., Plecenik, A., Kúš, P., : Strong biaxial texture and polymorph nature in TiO2 thin film formed by ex-situ annealing on c-plane Al2O3 surface. J. Crystal Growth 338 (2012) 118-124.

Ryć, L., Calcagno, L., Dubecký, F., Margarone, D., Nowak, T., Parys, P., Pfeifer, M., Riesz, F., Tomisi, L., : Application of single-crystal CVD diamond and SiC detectors for diagnostics of ion emission from laser plasmas. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 255-258.

Rýger, I., Vanko, G., Kunzo, P., Lalinský, T., Vallo, M., Plecenik, A., Satrapinskyy, L., Plecenik, T., : AlGaN/GaN HEMT based hydrogen sensors with gate absorption layers formed by high temperature oxidation. Procedia Engn. 47 (2012) 518-521. (APVV 0450-10). (APVV 0199-10). (VEGA-2-0163-09).

Rýger, I., Tomáška, M., Vanko, G., Lalinský, T., : An AlGaN/GaN based GHz-range surface acoustic wave oscillator for sensor applications. . In: Proc. 22nd Inter. Conf. Radioelektronika 2012. Eds. R. Balada et al. Brno: Univ. Technol. 2012. ISBN 978-80-214-4468-3. P. 279-282.

Rýger, I., Vanko, G., Kunzo, P., Lalinský, T., Dzuba, J., Vallo, M., Satrapinskyy, L., Plecenik, T., Chvála, A., : Gates of AlGaN/GaN HEMT for high temperature gas sensing applications. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 23-26.

Sedlačková, K., Zaťko, B., Nečas, V., : Numerical study of the particle transport in fast neutron detectors with conversion layer. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 51-54.

Seiler, E., Abrahamsen, A., Kováč, J., Wichmann, M., Traeholt, C., : Measurement of AC losses in a racetrack superconducting coil made from YBCO coated conductor. Phys. Procedia 36 (2012) 980-984.

Shindov, P., Šmatko, V., Anastasova, T., Serbezov, V., : Nah modification of CdSSe layers properties by fast CW CO2 laser annealing Annual J. Electr. (2012) 109-112.

Soloviov, M., Šouc, J., Gömöry, F., : Investigation of superconductor uniformity in CC tapes by magnetic field mapping. Phys. Procedia 36 (2012) 617-622.

Srnánek, R., Jakabovič, J., Kováč, J., Kováč, J., Haško, D., Šatka, A., Dobročka, E., Donoval, D., : Identification of the crystalline-phases in thin pentacene layers by Raman spectroscopy. Vacuum 86 (2012) 627-629.

Sroková, I., Janíčková, J., Janek, L., Sasinková, V., Laurenčíková, A., : Hydrophobic CMS and its usage in the rubber blend Hutnické listy 65 (2012) 16-18.

Stoklas, R., Gregušová, D., Novák, J., Kordoš, P., Tajima, M., Hashizume, T., : Current instabilities and other reliability aspects in AlGaN/GaN MOS-HFETs with atomic layer deposited Al2O3 as gate oxide. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 36-40.

Šagátová, A., Zaťko, B., Dubecký, F., Boháček, P., Sedlačková, K., Nečas, V., : Semi-insulating GAAS detectors of fast neutrons. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 59-62.

Šagátová, A., Zaťko, B., Sedlačková, K., Dubecký, F., Boháček, P., Nečas, V., : Influence of active volume on detection efficiency of GaAs neutron detectors. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 147-150.

Ščepka, T., Gregušová, D., Gaži, Š., Haščík, Š., Fedor, J., Šoltýs, J., Kúdela, R., Cambel, V., : Detection elements for on-cantilever laboratory. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 91-94. (CENTE).

Šmatko, V., Donchev, I., Kováčová, E., Štrbik, V., Zyryn, S., : Surface modification for novel nanosensors creation. In: Nanodevices and Nanomaterials for Ecological Security, NATO Sci Peace and Security Series B: Physics and Biophysics. ISBN 978-94-007-4118-8. Dordrecht: Springer Science+Business Media 2012. P. 263.

Šouc, J., Gömöry, F., Vojenčiak, M., : Coated conductor arrangement for reduced AC losses in a resistive-type superconducting fault current limiter. Supercond. Sci Technol. 25 (2012) 014005. (VEGA 2/0172/09). (CENTE II).

Štrbik, V., Beňačka, Š., Šmatko, V., Gaži, Š., Chromik, Š., Mateev, E., Blagoev, B., Nurgaliev, T., : Properties of SFS heterostructures prepared by a focused-ion-beam technique. J. Phys.: Conf. Ser. 356 (2012) 012021. (VEGA 2/0144/10). (VEGA 2-0164-11).

Štrbik, V., Chromik, Š., : Characterization of electrical transport in LSMO with enhanced temperature of metal-insulator transition. J. Electr. Engn. 63 (2012) 270. (CENTE II).

Šušlik, Ľ., Pudiš, D., Škriniarová, J., Kováč, J., Kováč, J., Kubicová, I., Novák, J., Haščík, Š., : Emission and absorption properties of patterned LED with2D PhC. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 299-302.

Šušlik, Ľ., Pudiš, D., Škriniarová, J., Kováč, J., Kubicová, I., Martinček, I., Novák, J., Haščík, Š., : 2D photonic structure with square symmetry in the GaAs/AlGaAs LED surface. In: Elektro 2012. Žilina: EF ŽU, 2012. ISBN 978-1-4673-1178-6. P. 523-526.

Takács, S., : Determination of time constant at different positions above superconducting cables. Cryogenics 52 (2012) 478-481. (VEGA 2/0172/09). (EURATOM FU-CT-2007-00051).

Ťapajna, M. and Kuzmík, J.: A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors, Applied Phys. Lett. 100 (2012) 113509. (HiPoSwitch). (VEGA 2-0147-11). (APVV 0104-10).

Ťapajna, M., Jimenez, J., Kuball, M., : On the discrimination between bulk and surface traps in AlGaN/GaN HEMTs from trapping characteristics. Phys. Status Solidi A 209 (2012) 386-389.

Ťapajna, M., Killat, N., Chowdhury, U., Jimenez, J., Kuball, M., : The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability. Microelectr. Reliab. 52 (2012) 29-32.(not IEE SAS).

Ťapajna, M., Killat, N., Moereke, J., Paskova, T., Evans, K., Leach, J., Li, X., Ozgur, U., Morkoc, H., Chabak, K., Crespo, A., Gillespie, J., Fitch, R., Kossler, M., Walker, D., Trejo, M., Via, G., Blevins, J., Kuball, M., : Non-arrhenius degradation of AlGaN/GaN HEMTs grown on bulk GaN substrates. IEEE Electron Device Lett. 33 (2012) 1126-1128.

Ťapajna, M., Gregušová, D., Čičo, K., Fedor, J., Carlin, J., Grandjean, N., Killat, N., Kuball, M., Kuzmík, J., : Early stage degradation of InAlN/GaN HEMTs during electrical stress. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 7-10.

Tóbik, J., Cambel, V., Karapetrov, G., : Dynamics of vortex nucleation in nanomagnets with broken symmetry. Phys. Rev. B 86 (2012) 134433. (CENTE II). (Vega 2/0037/12).

Truchly, M., Plecenik, T., Krško, O., Gregor, M., Satrapinskyy, L., Roch, T., Grančič, B., Mikula, M., Laurenčíková, A., Chromik, Š., Kúš, P., Plecenik, A., : Studies of YBa2Cu3O6+x degradation and surface conductivity properties by scanning spreading resistance microscopy. Physica C 483 (2012) 61-66.

Tvarožek, V., Novotný, I., Šutta, P., Netrvalová, M., Vávra, I., Bruncko, J., Gaspierik, P., Flickyngerová, S., : Oblique angle sputtering of ZnO:Ga thin films. Phys. Procedia 32 (2012) 456-463.

Válik, L., Ťapajna, M., Gucmann, F., Fedor, J., Šiffalovič, P., Fröhlich, K., : Distribution of fixed charge in MOS structures with ALD grown Al2O3 studied by capacitance measurements. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 227-230.

Vanko, G., Vallo, M., Bruncko, J., Lalinský, T., : Laser ablated ZnO layers for ALGaN/GaN HEMT passivation. Vacuum 86 (2012) 672-674. (APVV 0655-07). (VEGA-2-0163-09).

Vanko, G., Zehetner, J., Choleva, P., Lalinský, T., Hudek, P., : Laser ablation: A supporting technique to bulk micromachining of SiC. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 259-262.

Vanko, G., Vallo, M., Rýger, I., Dzuba, J., Lalinský, T., : Conductive metal oxide based gates for self aligned technology of AlGaN/GaN HEMT. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 19-22.

Varga, M., Remes, Z., Babchenko, O., Kromka, A., : Optical study of defects in nano-diamond films grown in linear antenna microwave plasma CVD from H2/CH4/CO2 gas mixture. Phys. Status Solidi B 249 (2012) 2635-2639. (Not IEE SAS).

Vávra, I., Križanová, Z., Dérer, J., Humlíček, J., : Mo/SiO2 nanocomposite films for optical coatings prepared by vacuum magnetron sputtering. Vacuum 86 (2012) 742-744. (VEGA 2/6100/26).

Viljamaa, J., Kario, A., Dobročka, E., Reissner, M., Kulich, M., Kováč, P., Haessler, W., : Effect of heat treatment temperature on superconducting performance of B4C added MgB2/Nb conductors. Physica C 473 (2012) 34-40. (CENTE II).

Vincze, A., Držík, M., Michalka, M., Bruncko, J., Vallo, M., Vanko, G., Lalinský, T., : SIMS depth profiling of metallization contact layers for AlGaN/GaN heterostructures. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 231-234.

Vitanov, S., Palankovski, V., Maroldt, S., Quay, R., Murad, S., Rodle, T., Selberherr, S., : Physics-based modeling of GaN HEMTs. IEEE Trans. Electron Devices 59 (2012) 685-693. (Not IEE SAS).

Wang, Q., Kromka, A., Houdkova, J., Babchenko, O., Rezek, B., Li, M., Boukherroub, R., Szunerits, S., : Nanomolar hydrogen peroxide detection using horseradish peroxidase covalently linked to undoped nanocrystalline diamond surfaces. Langmuir 28 (2012) 587-592. (Not IEE SAS).

Woch, W., Laurenčíková, A., Przewoznik, ., Zalecki, R., Kolodziejczyk, A., Sojková, M., Chromik, Š., : Magnetization, susceptibility and critical currents of (Tl2-xRex)Ba2CaCu2Oy thin films Acta Phys. Polonica A 121 (2012) 845-849. (VEGA 2/0139/08). (VEGA 2/7125/27). (APVV LPP-0078-07).

Zápražný, Z., Korytár, D., Áč, V., Konopka, P., Bielecki, J., : Phase contrast imaging of lightweight objects using microfocus X-ray source and high resolution CCD camera. J. Instrum. 7 (2012) C03005. (CENTE II). (APVV 51-0459-06). (VEGA 2/0153/10). (VEGA 2/0192/10). .

Zaťko, B., Šagátová, A., Dubecký, F., Sedlačková, K., Boháček, P., Nečas, V., : Study of particle detector based on SiC epitaxial layer. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 55-58.

Zaťko, B., Dubecký, F., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Nečas, V., : Detector of fast neutrons based on silicon carbide epitaxial layers. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 151-154.