2016

Amaro, N., Šouc, J., Pardo, E., Murta-Pina, J., Martins, J., Ceballos, J., Gömöry, F., : AC losses in Bi-2223 single-pancake coils from 72 to 1152 Hz – modeling and measurements. IEEE Trans. Applied Supercond. 26 (2016) 8202207. (CENTE II).

Babchenko, O., Vanko, G., Dzuba, J., Ižák, T., Vojs, M., Lalinský, T., Kromka, A., : Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition process In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 157-160. (SASPRO 0068/01/01). (APVV 0455-12).

Babchenko, O., Kozak, H., Ižák, T., Stuchlik, M., Remes, Z., Rezek, B., Kromka, A., : Fabrication of diamond-coated germanium ATR prisms for IR-spectroscopy. Vibrational Spectroscopy 84 (2016) 67–73. (Not IEE SAS).

Balalykin, N., Minashkin, V., Nozdrin, M., Trubnikov, G., Shirkov, G., Gacheva, E., Katin, E., Khazanov, E., Luchinin, G., Poteomkin, A., Zelenogorskii, V., Huran, J., : JINR LHEP photoinjector prototype Phys. Particles Nuclei Lett. 13 (2016) 897-900.

Balalykin, N., Huran, J., Nozdrin, M., Feshchenko, A., Kobzev, A., Arbet, J., : Transmission photocathodes based on stainless steel mesh and quartz glass coated with n doped DLC thin films prepared by reactive magnetron sputtering. J. Phys.:Conf. Ser. 700 (2016) 012050.

Benko, P., Mikolášek, M., Harmatha, L., Fröhlich, K., : The influence of ozone pre-treatment in Hf2-based resistive switching memory structures In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 243-246. (APVV 0509-10).

Blaho, M., Gregušová, D., Haščík, Š., Seifertová, A., Ťapajna, M., Šoltýs, J., Šatka, A., Nagy, L., Chvála, A., Marek, J., Carlin, J., Grandjean, N., Konstantinidis, G., Kuzmík, J., : Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics. Semicond. Sci Technol. 31 (2016) 065011. (CENTE). (APVV 0367-11). (VEGA 2/0138/14).

Blaho, M., Gregušová, D., Haščík, Š., Seifertová, A., Ťapajna, M., Šoltýs, J., Šatka, A., Nagy, L., Chvála, A., Marek, J., Priesol, J., Kuzmík, J., : Post-deposition annealing and thermal stability of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 177-180. (APVV 15-0673).

Brunner, B., Reissner, M., Kulich, M., Kováč, P., : Magnetic studies of MgB2 prepared by internal magnesium diffusion with various doping. IEEE Trans. Applied Supercond. 26 (2016) 6201205. (VEGA 2-0121-12). (APVV 14-0522).

Brunner, R., Pinčík, E., Kučera, M., Mikula, M., : Photoluminescence investigation of thin film a-Si:H-based structures passivated in cyanide solution. J. Chinese Adv. Mater. Soc 4 (2016) 62-69.

Burkatovskaya, Y., Bystritsky, V., Dudkin, G., Krylov, A., Lysakov, A., Gaži, Š., Huran, J., Nechaev, B., Padalko, V., Sadovsky, A., Tuleushev, Y., Filipowicz, M., Philippov, A., : Investigation of the reaction D(4He, ᵧ)6Li at ultralow energies. Phys. Particles Nuclei Lett. 13 (2016) 190-197.

Bystritsky, V., Dudkin, G., Krylov, A., Gaži, Š., Huran, J., Nechaev, B., Padalko, V., Sadovsky, A., Tuleushev, Y., Filipowicz, M., Philippov, A., : A method for investigation of the D(4He, ᵧ)6Li reaction in the ultralow energy region under a high background. Nuclear Instr. Methods Phys. Res. A 825 (2016) 24-30.

Bystritsky, V., Dudkin, G., Filipowicz, M., Huran, J., Krylov, A., Nechaev, B., Padalko, V., Penkov, F., Philippov, A., Tuleushev, Y., : Effect of pd and dd reactions enhancement in deuterides TiD2, ZrD2 and Ta2D in the astrophysical energy range. Phys. Particles Nuclei Lett. 13 (2016) 79-97.

Drga, J., Korytár, D., Zápražný, Z., Jergel, M., Halahovets, Y., : Influence of tool rake angle used for nanomachining of germanium In: Transfer 2016 – 17th Inter. Sci Conf. Trenčín: TU A. Dubčeka, 2016. ISBN 978-80-8075-756-4.. (APVV 14-0745). (VEGA 2/0004/15). (COST MP1203). (COST MP1207). (ITMS 26220220170).

Dubecký, F., Vanko, G., Kindl, D., Hubík, P., Gombia, E., Boháček, P., Sekáčová, M., Zaťko, B., : Investigation of metal contacts on semi-insulating GaAs: physics, technology and applications In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 219-222. (VEGA 2/0167/13). (VEGA 2/0152/16). (APVV 0321-11). (ITMS 26220220170).

Dubecký, F., Hubík, P., Kindl, D., Gombia, E., Boháček, P., Sekáčová, M., Nečas, V., : Unexpected current lowering of Mg contact on SI-GaAs. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 188-192. (VEGA 2/0152/16). (VEGA 2/0167/13). (CENTE II). (EURATOM/CU).

Dubecký, F., Oswald, J., Kindl, D., Hubík, P., Dubecký, M., Gombia, E., Šagátová, A., Boháček, P., Sekáčová, M., Nečas, V., : Photocurrent spectra of semi-insulating GaAs M-S-M diodes: role of the contacts. Solid-State Electr. 118 (2016) 30-35. (VEGA 2/0062/13). (VEGA 2/0175/13). (APVV 0321-11). (EURATOM/CU). (CENTE).

Dumur, F., Reculusa, S., Mruczkiewicz, M., Perrin, M., Vignau, L., Fasquel, S., : Multilayer Langmuir-Blodgett films as diffractive external 3D photonic crystal in blue OLEDs,. Optics Express 24 (2016) 27184-27198. (Not IEE SAS).

Dzuba, J., Vanko, G., Babchenko, O., Lalinský, T., Horvát, F., Szarvas, M., Kováč, T., Hučko, B., : Strain induced response of AlGaN/GaN high electron mobility transistor located on cantilever and membrane In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 227-230. (APVV 14-0613). (APVV 0455-12). (VEGA 1/0712/14).

Florovič, M., Škriniarová, J., Gregušová, D., Kováč, J., Kordoš, P., : Trap analysis in GaN-based heterostructures using current transients measurements In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 185-188. (VEGA 2/0105/13).

Grilli, F., Vojenčiak, M., Kario, A., Zermeno, V., : HTS Roebel cables: self-field critical current and AC losses under simultaneous applications of transport current and magnetic field. IEEE Trans. Applied Supercond. 26 (2016) 4803005.

Gucmann, F., Gregušová, D., Válik, L., Ťapajna, M., Haščík, Š., Hušeková, K., Fröhlich, K., Pohorelec, O., Kuzmík, J., : DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric prepared by various techniques In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 9-12. (SAFEMOST). (APVV 15-0243). (APVV 15-0673).

Hopkins, S., Mitchell-Williams, T., Vanden Brussche, D., Calleja, A., Vlad, V., Vilardell, M., Granados, X., Puig, T., Obradors, X., Usoskin, A., Soloviov, M., Vojenčiak, M., Gömöry, F., Van Driessche, I., Bäcker, M., Glowacki, B., : Low AC loss inkjet-printed multifilamentary YBCO coated conductors. IEEE Trans. Applied Supercond. 26 (2016) 6602905. (EUROTAPES).

Hotový, I., Haščík, Š., Predanocy, M., Mikolášek, M., Řeháček, V., Kostič, I., Nemec, P., Benčurová, A., Rossberg, D., Spiess, L., : The effect of process parameters and annealing on the properties of Ti/Pt films for miniature temperature sensors In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 85-88.

Hrivňak, S., Uličný, J., Mikeš, L., Cecilia, A., Hamann, E., Baumbach, T., Švéda, L., Zápražný, Z., Korytár, D., Gimenez, E., Wagner, U., Rau, C., Greven, H., Vagovič, P., : Single-distance phase retrieval algorithm for Bragg Magnifier microscope. Optics Express 24 (2016) 27753-27762. (APVV 14-0745). (VEGA 2/0004/15). (ITMS 26220220170). (COST MP1203). (COST MP1207).

Hronec, M., Fulajtárová, K., Vávra, I., Soták, T., Dobročka, E., Micusik, M., : Carbon supported Pd-Cu catalysts for highly selective rearrangement of furfural to cyclopentanone. Applied Catal. B 181 (2016) 210-219.

Hudec, B., Wang, I., Lai, W., Chang, C., Jančovič, P., Fröhlich, K., Mičušík, M., Omastová, M., Hou, T., : Interface engineering HfO2-based 3D vertical ReRAM. J. Phys. D 49 (2016) 215102. (VEGA 2/0138/14).

Hudec, B., Hsu, C., Wang, I., Lai, W., Chang, C., Wang, T., Fröhlich, K., Ho, C., Lin, C., Hou, T., : 3D resistive RAM cell design for high-density storage class memory – a review. Sci China Infor. Sci 59 (2016) 061403. (VEGA 2/0138/14).

Huran, J., Boháček, P., Sasinková, V., Kleinová, A., Mikolášek, M., Kobzev, A., Hrubčín, L., Arbet, J., Sekáčová, M., : Silicon carbide thin films deposited by PECVD technology for applications in photoelectrochemical water splitting devices In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 215-219. (APVV 0443-12).

Huran, J., Balalykin, N., Haščík, Š., Feshchenko, A., Kobzev, A., Sasinková, V., Kleinová, A., Arbet, J., : Dry etching of phosphorus doped SiC thin films prepared by PECVD technology for transmission photocathode In: Proc. ADEPT. 4st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. J. Kováč,jr. et al. Žilina: Univ. Žilina 2016. ISBN 978-80-554-1226-9. P. 35-38. (APVV 0443-12).

Huran, J., Perný, M., Hrubčín, L., Skuratov, V., Šály, V., Mikolášek, M., Kobzev, A., Arbet, J., : Xe ion irradiation of heterojunction solar cell structures with ITO antireflection film In: Proc. ADEPT. 4st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. J. Kováč,jr. et al. Žilina: Univ. Žilina 2016. ISBN 978-80-554-1226-9. P. 151-154. (APVV 0443-12). (APVV 0321-11).

Ižák, T., Jirásek, V., Vanko, G., Dzuba, J., Kromka, A., : Temperature-dependent stress in diamond-coatewd AlGaN/GaN heterostructures. Mater. & Design 106 (2016) 305-312. (APVV 0455-12).

Kačmarčík, J., Pribulová, Z., Samuely, T., Szabó, P., Cambel, V., Šoltýs, J., Herrera, E., Suderow, H., Correa-Orellana, A., Prabhakaran, D., Samuely, P., : Single-gap superconductivity in ẞ-Bi2Pd. Phys. Rev. B 93 (2016) 144502. (APVV 0036-11).

Kalmbach, C., Ahlers, F., Schurr, J., Müller, A., Feilhauer, J., Kruskopf, M., Pierz, K., Hohls, F., Haug, R., : Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/ƒ noise in epitaxial graphene. Phys. Rev. B 94 (2016) 205430.

Kazimirova, A., Peikertová, P., Barancokova, M., Staruchova, M., Tulinska, J., Vaculík, M., Vávra, I., Kukutschová, J., Filip, P., Dusinska, M., : Automative airborne brake wear debris nanoparticles and cytokinesis-block micronucleus assay in peripheral blood lymphocytes: A pilot study,. Enviroment. Research 148 (2016) 443-449.

Kostiuk, D., Bodik, M., Šiffalovič, P., Jergel, M., Halahovets, Y., Hodas, M., Pelletta, M., Pelach, M., Hulman, M., Spitalsky, Z., Omastová, M., Majková, E., : Reliable determination of the few-layer graphene oxide thickness using Raman spectroscopy. J. Raman Spectrosc. 47 (2016) 391-394. (VEGA 2/0004/15). (VEGA 2/0178/15). (KCMTE). (COST CM1101).

Kováč, J., : AC losses in MgB2 wires In: MgB2 superconducting wires. Ed. R. Flückiger. New Jersey: World Sci Publ. 2016. ISBN 978-981-4725-58-3. P. 419-438.

Kováč, P., : Effect of mechanical load on Jc of MgB2 wires In: MgB2 superconducting wires. Ed. R. Flückiger. New Jersey: World Sci Publ. 2016. ISBN 978-981-4725-58-3. P. 439-454.

Kováč, P., Hušek, I., Kováč, J., Melišek, T., Kulich, M., Kopera, Ľ., : Filamentary MgB2 wires with low magnetization AC losses. IEEE Trans. Applied Supercond. 26 (2016) 6200705. (VEGA 2-0121-12). (APVV 14-0522). (CENTE). (SUPRAPOWER).

Kováč, P., Hušek, I., Pachla, W., Melišek, T., Kulich, M., Rosová, A., Kopera, Ľ., : Effect of cold isostatic pressing on the transport current of filamentary of MgB2 wire made by the IMD process. Supercond. Sci Technol. 26 (2016) 075004. (APVV 14-0522). (VEGA 2/0129/16).

Kováč, T., Horvát, F., Čekan, M., Hučko, B., Szarvas, M., Dzuba, J., Vanko, G., : Numerical solution of aluminum galium nitride membrane in finite element analysis In: APLIMAT 2016. Eds. D. Richtarikova et al. Bratislava: STU 2016. ISBN: 978-802274531-4. P. 700-710.

Kováč, P., Hušek, I., Melišek, T., Kulich, M., Kopera, Ľ., : Bending strain tolerance of a MgB2 superconducting wires. Supercond. Sci Technol. 29 (2016) 045002. (APVV 14-0522). (CENTE). (SUPRAPOWER).

Kováč, P., Hušek, I., Kulich, M., Melišek, T., Kováč, J., Kopera, Ľ., : MgB2 wires with Ti and NbTi barrier made by IMD process. Cryogenics 79 (2016) 74-78. (APVV 14-0522). (VEGA 2/0129/16). (CENTE).

Kováč, P., Hušek, I., Melišek, T., Kopera, Ľ., Kulich, M., : Fast creation of dense MgB2 phase in wires made by IMD process,. Supercond. Sci Technol. 26 (2016) 10LT01.. (APVV 14-0522). (VEGA 2/0129/16).

Kratka, M., Babchenko, O., Ukraintsev, E., Vachelova, J., Davidkova, M., Vandrovcova, M., Kromka, A., Rezek, B., : Gamma radiation effects on hydrogen-terminated nanocrystalline diamond bio-transistors. Diamond Related Mater. 63 (2016) 186-191. (Not IEE SAS).

Kratošová, G., Konvičková, Z., Vávra, I., Zapomělová, E., Mahendra, R., Schröfel, A., : Noble metal nanoparticles synthesis mediated by the genus dolichospermum: perspective of green approach in the nanoparticles preparation. Adv. Sci Lett. 22 (2016) 637-641.

Kratošová, G., Natšinová, M., Holišová, V., Obalová, L., Chromčáková, Ž., Vávra, I., : Transmission electron microscopy observation of bionanogold used for preliminary N2O decomposition testing. Adv. Sci Lett. 22 (2016) 631-636.

Kulich, M., Kováč, P., Hain, M., Rosová, A., Dobročka, E., : High density and connectivity of a MgB2 filament made using the internal magnesium diffusion technique. Supercond. Sci Technol. 29 (2016) 035004. (APVV 14-0522). (VEGA 2/0126/15). (CENTE).

Lalinský, T., Vanko, G., Dzuba, J., Kutiš, V., Gálik, G., Paulech, J., Držík, M., Chromik, Š., and Lobotka, P.: Thermo-mechanical analysis of uncooled La0.67Sr0,33MnO3 microbolometer made on circular SOI membrane, Procedia  Engn. 168 (2016) 733-736.

Laurenčíková, A., Lettrichová, I., Pudiš, D., Hasenöhrl, S., Šušlik, Ľ., Haščík, Š., Dérer, J., Novák, J., : Integration of fresnel structure on AlGaAs/GaAs led devices In: Proc. ADEPT. 4st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. J. Kováč,jr. et al. Žilina: Univ. Žilina 2016. ISBN 978-80-554-1226-9. P. 179-182.

Lettrichová, I., Pudiš, D., Laurenčíková, A., Gašo, P., Šušlik, Ľ., Jandura, D., Ďurišová, J., Novák, J., : LED with 1D and 2D Fresnel structure in the surface In: 19. Škola vák. techniky. Eds. M. Michalka, A. Vincze. Bratislava: SVS, 2016. P. 87-90. ISBN 978-80-971179-7-9.. (APVV 0395-12).

Matys, M., Stoklas, R., Kuzmík, J., Adamowicz, J., Yatabe, Z., Hashizume, T., : Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures. J. Applied Phys. 119 (2016) 205304.

Matys, M., Adamowicz, J., Domanowska, A., Michalewicz, A., Stoklas, R., Akazawa, M., Yatabe, Z., Hashizume, T., : On the origin of interface states at oxide/III-nitride heterojunction interfaces. J. Applied Phys. 119 (2016) 225305. (SAFEMOST).

Medvecká, Z., Klein, T., Cambel, V., Šoltýs, J., Karapetrov, G., Levy-Bertrand, F., Michon, B., Marcenat, C., Pribulová, Z., Samuely, P., : Observation of a transverse Meissner effect in CuxTiSe2 single crystals. Phys. Rev. B 93 (2016) 100501(R). (APVV 0036-11). (APVV 51-040605).

Michalcová, E., Gömöry, F., Frolek, L., Drienovský, M., Pekarčíková, M., Skarba, M., Mišík, J., Janovec, J., : Joining of CC tapes with lead-free solders. IEEE Trans. Applied Supercond. 26 (2016) 8801104. (VEGA 1-0162-11). (EURATOM FU-CT-2007-00051). (APVV 14-0438).

Mikolášek, M., Harmatha, L., Perný, M., Šály, V., Huran, J., : Development of silicon heterojunction solar cells with IZO and ITO antireflection coatings In: Proc. 6th Inter. Sci Conf. OZE 2016 „Renewable Energy Sources 2016“. Eds. J. Cirák et al. Bratislava: STU 2016. ISBN 978-80-89402-82-3. P. 104-109. (APVV 0443-12).

Mikolášek, M., Racko, J., Řeháček, V., Harmatha, L., Ťapajna, M., Fröhlich, K., : Silicon based metal-insulator-semiconductor structures for photoelectrochemical solar fuel generation In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 45-48. (VEGA 2/0138/14).

Mikula, P., Vrána, M., Šaroun, J., Woo, W., Em, V., Čapek, J., Korytár, D., : Comparison of double crystal (+n,-m) and (+n,+m) settings containing a fully asymmetric diffraction geometry of a bent perfect crystal with the output beam expansion,. J. Phys.: Conf. Ser. 746 (2016) 012029. (Not IEE SAS).

Mikulics, M., Arango, Y., Winden, A., Adam, R., Hardtdegen, A., Grützmacher, D., Plinski, E., Gregušová, D., Novák, J., Kordoš, P., Moonshiram, A., Marso, M., Sofer, Z., Lüth, H., Hardtdegen, H., : Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes. Applied Phys. Lett. 108 (2016) 061107. (VEGA 2/0105/13). (VEGA 2/0098/13). (APVV 14-0297).

Mišík, J., Gömöry, F., Vávra, I., Soloviov, M., Vojenčiak, M., Girman, V., Skarba, M., Pekarčíková, M., Michalcová, E., Janovec, J., : Structural study of commercially produced (RE)BCO films. IEEE Trans. Applied Supercond. 26 (2016) 6600804. (APVV 14-0438). (CENTE II).

Moore, S., Plummer, G., Fedor, J., Pearson, J., Novosad, V., Karapetrov, G., Iavarone, M., : Doppler-scanning tunneling microscopy current imaging in superconductor-ferromagnet hybrids,. Applied Phys. Lett. 108 (2016) 042601..

Mruczkiewicz, M., Gruszecki, P., Zelent, M., Krawczyk, M., : Collective dynamical skyrmion excitations in a magnonic crystal. Phys. Rev. B 93 (2016) 174429. (SASPRO 1244/02/01).

Mruczkiewicz, M., Krawczyk, M., : Influence of the Dzyaloshinskii-Moriya interaction on the FMR spectrum of magnonic crystals and confined structures. Phys. Rev. B 94 (2016) 024434. (SASPRO 1244/02/01).

Neilinger (Sečianska), K., Šoltýs, J., Truchly, M., Dérer, J., Cambel, V., : Fabrication of double cantilever sensor for study of magnetic microstructures. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 61-64.. (CENTE II). (VEGA 2/0183/15).

Novák, J., Laurenčíková, A., Hasenöhrl, S., Novotný, I., : Young modulus and microhardness of ZnO nanolayers prepared by RF sputtering In: 19. Škola vák. techniky. Eds. M. Michalka, A. Vincze. Bratislava: SVS, 2016. P. 34-38. ISBN 978-80-971179-7-9.. (APVV 0395-12). (APVV 14-0297). (VEGA 2/0098/13).

Nurgaliev, T., Blagoev, B., Štrbik, V., Chromik, Š., Sojková, M., : Investigation of resistive properties of HTS/manganite bilayers. J. Phys.:Conf. Ser. 700 (2016) 012020. (VEGA 2/0173/13). (VEGA 2/0120/14).

Osvald, J., : Electrical properties of back-to-back metal/insulator/semiconductor diodes based on AlGaN/GaN heterostructure In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 231-234. (VEGA 2/0167/13). (APVV 14-0613). (CENTE II).

Osvald, J., : Properties of AlGaN/GaN varactor with two dimensional electron gas In: Proc. ADEPT. 4st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. J. Kováč,jr. et al. Žilina: Univ. Žilina 2016. ISBN 978-80-554-1226-9. P. 245-248.

Packa, J., Perný, M., Váry, M., Mikolášek, M., Šály, V., Huran, J., : Accelerated ageing of a-SiC:H/c-Si photovoltaic heterostructures. In: Proc. 17th Inter. Sci Conf. on Electric Power Engn. – EPE 2016. Eds. Z. Müller and M. Müller. IEEE 2016. ISBN 978-1-5090-0907-7. P. 1-5.

Pardo, E., : Modeling of screening currents in coated conductor magnets containing up to 40000 turns. Supercond. Sci Technol. 29 (2016) 085004. (EUROTAPES). (ASFEU ITMS 26240220088).

Pardo, E., Kapolka, M., Kováč, J., Šouc, J., Grilli, F., Piqué, A., : Three-dimensional modeling and measurement of coupling AC loss in soldered tapes and striated coated conductors, (Invited paper). IEEE Trans. Applied Supercond. 26 (2016) 4700607. (VEGA 2/0126/15). (CENTE). (EUROTAPES).

Perný, M., Šály, V., Mikolášek, M., Váry, M., Packa, J., Huran, J., : The influence of Xe-Ions irradiation on c-Si/a-SiC photovoltaic device. In: Proc. Diagnostic of Electric. Machines Insulating Systems in Electrical Engn. – DEMISEE 2016. Eds. M. Brandt and M. Váry. IEEE 2016. ISBN: 978-1-5090-1249-7. P. 11-15.

Perný, M., Váry, M., Šály, V., Mikolášek, M., Huran, J., : The influence of neutrons and Xe-ions flux on c-Si – a-SiC photovoltaic device In 32nd European Photovoltaic Solar Energy Conference and Exhibition – EU PVSEC 2016. Eds. M. Topič et al. Münich: WIP, 2016. P. 260-262. ISBN 3-936338-41-8. ISSN 2196-0992. (APVV 0443-12).

Perný, M., Šály, V., Mikolášek, M., Kujan, V., Váry, M., Huran, J., : Electrical properties of solar heterojunction a-SiC/c-Si irradiated by neutrons In: Proc. 6th Inter. Sci Conf. OZE 2016 „Renewable Energy Sources 2016“. Eds. J. Cirák et al. Bratislava: STU 2016. ISBN 978-80-89402-82-3. P. 151-154. (APVV 0443-12).

Pinčík, E., Kobayashi, H., Brunner, R., Imamura, K., Mikula, M., Kučera, M., Vojtek, P., Zábudlá, Z., Švec, P., Greguš, J., Švec, P., : Physical properties and light-related applications of black silicon structures. J. Mater. Sci Engn. B 6 (2016) 144-152..

Pitel, J., Melišek, T., Tropeano, M., Nardelli, D., Tumino, A., : Mathematical model to determine the dimensions of superconducting cylindrical coils with a given central field – the case study for MgB2 conductors with isotropic Ic(B) characteristic. Physica C 527 (2016) 104-113. (SUPRAPOWER). (APVV 0495-10).

Remes, Z., Babchenko, O., Varga, M., Stuchlík, J., Jirásek, V., Prajzler, V., Nekvindova, P., Kromka, A., : Preparation and optical properties of nanocrystalline diamond coatings for infrared planar waveguides,. Thin Solid Films 618 (2016) 130-133. (Not IEE SAS).

Ryć, L., Dobrzański, L., Dubecký, F., Jabłoński, S., Parys, P., Słysz, W., Rosiński, M., : Development of x-ray and ion diagnostics of plasma obtained with a 10-TW femtosecond laser. Physica Scripta 91 (2016) 074008.

Sedlačková, K., Šagátová, A., Zaťko, B., Nečas, V., Solar, M., Granja, C., : MCNPX simulations of the silicon carbide semiconductor detector response to fast neutrons from D-T nuclear reaction. Inter. J. Modern Phys.: Conf. Ser. 44 (2016) 1660226. (APVV 0321-11). (VEGA 2/0062/13).

Sedlačková, K., Zaťko, B., Šagátová, A., Nečas, V., : Simulation of the thermal neutron semiconductor detector response using MCNPX code. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 126-130. (APVV 0321-11). (VEGA 2/0152/16).

Seiler, E., Richter, D., Bordini, B., Bottura, L., Bessette, D., Vostner, A., Devred, A., : Hysteresis losses and effective Jc(B) scaling law for ITER Nb3Sn strands. IEEE Trans. Applied Supercond. 26 (2016) 8200307.

Senatore, C., Barth, C., Bonura, M., Kulich, M., Mondonico, G., : Field and temperature scaling of the critical current density in commercial REBCO coated conductors,. Supercond. Sci Technol. 29 (2016) 014002. (Not IEE SAS).

Sojková, M., Štrbik, V., Nurgaliev, T., Chromik, Š., Dobročka, E., Španková, M., Blagoev, B., Gál, N., : Fabrication of hybrid thin film structures from HTS and CMR materials. J. Phys.:Conf. Ser. 700 (2016) 012022. (APVV-0494-11). (APVV LPP-0078-07). (VEGA 2/0120/14). (VEGA 2/0173/13). (CENTE II).

Soloviov, M., Šouc, J., Kováč, J., Gömöry, F., Mikulášová, E., Ušáková, M., Ušák, E., : Design of magnetic cloak for experiments in AC regime, (Invited paper). IEEE Trans. Applied Supercond. 26 (2016) 0500206. (APVV 0623-12).

Soták, T., Hronec, M., Vávra, I., Dobročka, E., : Sputtering processed tungsten catalysts for aqueous phase reforming of cellulose. Inter. J. Hydrogen Energy 41 (2016) 21936-21944. (VEGA 2 /0129/13).

Stoklas, R., Gregušová, D., Fröhlich, K., Kuzmík, J., : Temperature-dependent of sub-threshold slope of AlGaN/GaN MOSHFETs with HfO2 gate oxide prepared by ALD In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 189-192. (VEGA 2/0105/13). (VEGA 2/0138/14). (CENTE). (APVV 15-0673).

Szundiová, B., Zaťko, B., Boháček, P., Sekáčová, M., Nečas, V., : Electrical and detection properties of bulk semi-insulating GaAs detectors. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 275-278. (VEGA 2/0152/16). (APVV 0321-11). (APVV 0443-12). (ITMS 26220220170).

Šagátová, A., Zaťko, B., Sedlačková, K., Pavlovič, M., Nečas, V., Fülöp, M., Solar, M., Granja, C., : Semi-insulating GaAs detectors with HDPE layer for detection of fast neutrons from D-T nuclear reaction. Inter. J. Modern Phys.: Conf. Ser. 44 (2016) 1660233. (VEGA 2/0062/13). (VEGA 2/0175/13). (APVV 0321-11).

Šagátová, A., Zaťko, B., Sedlačková, K., Nečas, V., Daráţová, Ľ., : Gallium arsenide detectors with 6LiF layer for thermal neutron detection. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 45-49. (APVV 0321-11). (VEGA 2/0152/16).

Šagátová, A., Zaťko, B., Sedlačková, K., Nečas, V., Boháček, P., : Optimization of SI GaAs detector for thermal neutron detection In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 23-26. (VEGA 2/0152/16). (APVV 0321-11). (ITMS 26220220170).

Šagátová, A., Kubanda, M., Zaťko, B., Sedlačková, K., Nečas, V., Solar, M., Granja, C., : Semi-insulating GaAs based detector of fast neutrons produced by D–T nuclear reaction. J. Instrument. 11 (2016) C12002. (VEGA 2/0152/16). (APVV 0321-11). (APVV 0443-12). (ITMS 26220220170).

Šagátová, A., Zaťko, B., Sedlačková, K., Boháček, P., Fülöp, M., Kubanda, M., Nečas, V., : Spectrometric properties of semi-insulating GaAs detectors irradiated by 5 MeV electrons at different dose rates. J. Instrument. 11 (2016) C12078.. (APVV 0321-11). (VEGA 2/0152/16).

Šiffalovič, P., Végsö, K., Hodas, M., Jergel, M., Halahovets, Y., Pelletta, M., Korytár, D., Zápražný, Z., Majková, E., : In situ x-ray reciprocal space mapping for characterization of nanomaterials In: X-ray and neutron techniques for nanomaterials characterization. Ed. C. S.S.R. Kumar. Berlin, Springer 2016. ISBN 978-3-662-48604-7. P. 507-544.

Šouc, J., Soloviov, M., Gömöry, F., : Hiding objects in AC magnetic fields of power grid frequency by two-shell ferromagnetic/superconducting cloak,. Applied Phys. Lett. 109 (2016) 033507.. (APVV 0623-12).

Španková, M., Štrbik, V., Dobročka, E., Chromik, Š., Sojková, M., Zheng, D., Li, J., : Characterization of epitaxial LSMO thin films with high Curie temperature prepared on different substrates. Vacuum 126 (2016) 24-28. (APVV-0494-11). (APVV LPP-0078-07). (APVV 14-0613). (VEGA 2/0120/14). (VEGA 2/0173/13). (CENTE).

Štrbik, V., Beňačka, Š., Gaži, Š., Španková, M., Šmatko, V., Chromik, Š., Gál, N., Knoška, J., Sojková, M., Pisarčík, M., : Transport properties of YBa2Cu3Ox/La0.67Sr0.33MnO3 nanostripes and YBa2Cu3Ox/La0.67Sr0.33MnO3/ YBa2Cu3Ox nanojunctions. J. Phys.:Conf. Ser. 700 (2016) 012021. (APVV-0494-11). (VEGA 2/0173/13). (VEGA 2/0120/14). (CENTE II).

Takács, S., : Time constant of round superconducting structures determined from the time development of the induced magnetic field. Cryogenics 80 (2016) 90-96. (VEGA 2/0126/15). (EURATOM FU-CT-2007-00051).

Ťapajna, M., Hilt, O., Bahat-Triedel, E., Würfl, H., Kuzmík, J., : Gate reliability investigation in normally-off p-type-gan cap/AlGaN/GaN HEMTs under forward bias stress. IEEE Electron Device Lett. 37 (2016) 385 – 388.

Ťapajna, M., Válik, L., Gregušová, D., Fröhlich, K., Gucmann, F., Hashizume, T., Kuzmík, J., : Treshold voltage instabilities in AlGaN/GaN MOS-HEMTs with ALD-grown Al2O3 gate dielectrics: relation to distribution of oxide/semiconductor interface state density In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 1-4.. (SAFEMOST). (APVV 15-0031). (VEGA 2/0138/14).

Ťapajna, M., Hušeková, K., Pohorelec, O., Válik, L., Haščík, Š., Gucmann, F., Fröhlich, K., Gregušová, D., Kuzmík, J., : Effect of HCl pretreatment on the oxide/semiconductor interface state density in AlGaN/GaN MOS-HEMT structures with MOCVD grown Al2O3 gate dielectric In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 207-211. (SAFEMOST). (APVV 15-0031). (VEGA 2/0138/14).

Tsindlekht, M., Genkin, V., Felner, I., Zeides, F., Katz, N., Gaži, Š., Chromik, Š., Dobrovolskiy, O., Sachser, R., Huth, M., : dc and ac magnetic properties of thin-walled Nb cylinders with and without a row of antidots. J. Phys.: Cond. Matter 28 (2016) 215701. (VEGA 2/0173/13). (VEGA 2/0120/14).

Tsindlekht, M., Genkin, V., Felner, I., Zeides, F., Katz, N., Gaži, Š., Chromik, Š., : Giant flux jumps through a thin superconducting nb film in a vortex free region. Physica C 529 (2016) 1-6. (VEGA 2/0173/13). (VEGA 2/0120/14).

Végsö, K., Jergel, M., Šiffalovič, P., Majková, E., Korytár, D., Zápražný, Z., Mikulík, P., Vagovič, P., : Towards high-flux X-ray beam compressing channel-cut monochromators. J. Applied Crystall. 49 (2016) 1885-1892.

Verdanova, M., Rezek, B., Broz, A., Ukraintsev, E., Babchenko, O., Artemenko, A., Ižák, T., Kromka, A., Kalbac, M., Kalbacova, M., : Nanocarbon allotropes-graphene and nanocrystalline diamond-promote cell proliferation. Small 12 (2016) 2499-2509. (Not IEE SAS)..

Vojenčiak, M., Dutoit, B., Šouc, J., Gömöry, F., : Can resistive-type fault current limiter operate in cryogen-free environment?. IEEE Trans. Applied Supercond. 26 (2016) 5602504. (CENTE II). (SASPRO 0061/01/01).

Zani, L., Bayer, C., Biancolini, M., Bonifetto, R., Bruzzone, P., Brutti, C., Ciazynski, D., Coleman, M., Duran, I., Eisterer, M., Fietz, W., Gade, P., Gaio, E., Giorgetti, F., Goldacker, W., Gömöry, F., Granados, X., Heller, R., Hertout, P., Hoa, C., Kario, A., Lacroix, B., Lewandowska, M., Maistrello, A., Muzzi, L., Nijhuis, A., Nunio, F., Panin, A., Petrisor, T., Poncet, J., Prokopec, R., Sanmarti Cardona, M., Savoldi, R., Schlachter, S., Sedlak, K., Stepanov, B., Tiseanu, I., Torres, A., Turtú, S., Vallcorba, R., Vojenčiak, M., Weiss, K., Wesche, R., Yagotintsev, K., Zanino, R., : Overview of progress on the EU DEMO reactor magnet system design. IEEE Trans. Applied Supercond. 26 (2016) 4204505. (EUROfusion).

Zápražný, Z., Korytár, D., Jergel, M., Šiffalovič, P., Halahovets, Y., Keckes, J., Maťko, I., Ferrari, C., Vagovič, P., Mikloška, M., : Nano-machining for advanced x-ray crystal optics. AIP Conf. Proc. 1764 (2016) 020005. (ITMS 26220220170). (APVV 14-0745). (APVV 0308-11). (VEGA 2/0004/15). (COST MP1203). (COST MP1207).

Zasońska, B., Líšková, A., Kuricova, M., Tulinska, J., Pop-Georgievski, O., Čiampor, F., Vávra, I., Dusinska, M., Ilavská, S., Horvathova, M., Horák, D., : Functionalized porous silica&maghemite core-shell nanoparticles for applications in medicine: design, synthesis, and immunotoxicity,. Croat. Med. J. 57 (2016) 165-178.

Zaťko, B., Šagátová, A., Sedlačková, K., Nečas, V., Dubecký, F., Solar, M., Granja, C., : Detection of fast neutrons from D-T nuclear reaction using 4H-SiC radiation detector. Inter. J. Modern Phys.: Conf. Ser. 44 (2016) 1660235. (VEGA 2/0152/16). (APVV 0321-11). (ITMS 26220220170).

Zaťko, B., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Kohout, Z., Granja, C., Nečas, V., : Radiation detector based on 4H-SiC used for thermal neutron detection. J. Instrument. 11 (2016) C11022. (VEGA 2/0152/16). (APVV 0321-11). (APVV 0443-12). (ITMS 26220220170).

Zaťko, B., Šagátová, A., Boháček, P., Sekáčová, M., Arbet, J., Nečas, V., : The thermal neutron detection using 4H-SiC detectors with 6LiF conversion layer. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 37-41. (VEGA 2/0152/16). (APVV 0321-11). (CENTE II). (APVV 0443-12).

Zaťko, B., Šagátová, A., Boháček, P., Sedlačková, K., Sekáčová, M., Arbet, J., Nečas, V., : The influence of high-energy electrons irradiation on the electrical properties of Schottky barrier detectors based on semi-insulating GaAs. J. Instrument. 11 (2016) C01076. (VEGA 2/0062/13). (VEGA 2/0175/13). (APVV 0321-11). (APVV 0443-12). (ITMS 26220220170). (CENTE).

Zaťko, B., Hrubčín, L., Šagátová, A., Boháček, P., Dubecký, F., Sedlačková, K., Sekáčová, M., Arbet, J., Nečas, V., Skuratov, V., : Particle detectors based on 4H-SiC epitaxial layer and their properties In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 141-144. (VEGA 2/0152/16). (APVV 0321-11). (APVV 0443-12). (ITMS 26220220170).

Zehetner, J., Vanko, G., Dzuba, J., Lalinský, T., : Nanostructuring of bulk Si and SiC substrates by femtosecond laser ablation for membrane fabrication and surgace functionalization In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 223-226.

Zehetner, J., Vanko, G., Dzuba, J., Lalinský, T., Lucki, M., Kraus, S., : Micro structuring of bulk SiC substrates by femtosecond laser ablation. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 302-305. (SK-AT-0019-10). (APVV 0450-10).

Zehetner, J., Kraus, S., Lucki, M., Vanko, G., Dzuba, J., Lalinský, T., : Manufacturing of membranes by laser ablation in SiC, sapphire, glass and ceramic for GaN/ferroelectric thin film MEMS and pressure sensors. Microsyst. Technol. 22 (2016) 1883-1892. (SK-AT-0019-10). (APVV 0455-12).

Zemanová, M., Druga, J., Szúnyogh, J., Dobročka, E., : Ni-W alloys for hydrogen evolution. Mater. Sci Forum 844 (2016) 167-171.