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Mošková, A., Moško, M., Precner, M., Mikolášek, M., Rosová, A., Mičušík, M., Štrbík, V., Šoltýs, J., Gucmann, F., Dobročka, E., and Fröhlich, K.: Doping efficiency and electron transport in Al-doped ZnO films grown by atomic layer deposition, J. Applied Phys. 130 (2021) 035106.

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3. Singh, R.: J. Mater Sci-Mater. Electron. 33 (2022) 6969.

Vidiš, M., Plecenik, T., Moško, M., Tomašec, S., Roch, T., Satrapinsky, L., Grančič, B., and Plecenik, A.: Gasistor: A memristor based gas-triggered switch and gas sensor with memory, Applied Phys. Lett. 115 (2019) 093504. (Not IEE SAS)

1. Weng, T.-F.: Applied Surface Sci 533 (2020) 147476.
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3. Erokhin, V.: BioNanoSci 10 (2020) 834.
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# 5. Gupta, V.: 33rd IEEE Inter. Symp. Defect Fault Tolerance in VLSI and Nanotechnol. Systems – DFT 2020, no. 9250843.
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7. Chen, X.T.: IEEE Trans. Nanotechnol. 20 (2021) 512.
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17. Zhang, Y.Q.: Acta Physica Sinica 71 (2022) 148502.
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Mošková, A. and Moško, M.: Note on the Coulomb blockade of a weak tunnel junction with Nyquist noise: Conductance formula for a broad temperature range. Phys. Status Solidi C 14 (2017) 1700029.

1. Foong, Y.W.: J. Phys. Chem. C 125 (2021) 4343.
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Krško, O., Plecenik, T., Moško, M., Haidry, A., Durina, P., Truchly, M., Grančič, B., Gregor, M., Roch, T., Satrapinsky, L., Mošková, A., Mikula, M., Kúš, P., and Plecenik, A.: Highly sensitive hydrogen semiconductor gas sensor operating at room temperature, Procedia Engn. 120 (2015) 618-622.

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Plecenik, T., Moško, M., Haidry, A., Durina, P., Truchly, M., Grančič, B., Gregor, M., Roch, T., Satrapinskyy, L., Mošková, A., Mikula, M., Kúš, P., and Plecenik, A.: Fast highly-sensitive room-temperature semiconductor gas sensor based on the nanoscale Pt-TiO2-Pt sandwich, Sensors Actuators B 207 (2015) 351-361.

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Plecenik, A., Haidry, A.A., Plecenik, T., Durina, P., Truchly, M., Moško, M., Grančič, B., Gregor, M., Roch, T., Satrapinsky, L., Mošková, A., Mikula, M., and Kúš, P.: Metal oxide gas sensors on the nanoscale, Proc. SPIE 9083 (2014) 9083OY.

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Feilhauer, J., Moško, M., : Coexistence of diffusive resistance and ballistic persistent current in disordered metallic rings with rough edges: possible origin of puzzling experimental values. Phys. Rev. B 88 (2013) 125424, also arXiv: 1203.6512v2 (2012).

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Mošková, A., Moško, M., Tóbik, J., : Theoretical study of persistent current in a nanoring made of a band insulator. Phys. Status Solidi B 250 (2013) 147-159.

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Feilhauer, J., Moško, M., : Conductance and persistent current in quasi-one-dimensional systems with grain boundaries: Effects of the strongly reflecting and columnar grains. Phys. Rev. B 84 (2011) 085454.

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Feilhauer, J., Moško, M., : Quantum and Boltzmann transport in a quasi-one-dimensional wire with rough edges. Phys. Rev. B 83 (2011) 245328.

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Moško, M., Németh, R., Krčmár, R., Indlekofer, K., : Luttinger liquid and persistent current in a continuous mesoscopic ring with a weak link. Phys. Rev. B 79 (2009) 245323.

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Németh, R., Moško, M., : One-dimensional ring with Kronig–Penney periodic potential: Persistent currents at full filling. Physica E 40 (2008) 1498.

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Feilhauer, J., Moško, M., : Persistent current in a disordered mesoscopic ring with many channels: Scattering-matrix based calculation. Physica E 40 (2008) 1582.

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Krčmár, R., Gendiar, A., Moško, M., Németh, R., Vagner, P., Mitas, L., : Persistent current of correlated electrons in mesoscopic ring with impurity. Physica E 40 (2008) 1507-1509.

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Moško, M., Vagner, P., Gendiar, A., Németh, R., : Coherent transport of interacting electrons through a single scatterer. Physica B 378-380 (2006) 908.

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Vagner, P., Moško, M., Németh, R., Wagner, L., and Mitas, L.: Hartree-Fock versus quantum Monte Carlo study of persistent current in a one-dimentional ring with single scatterer, Physica E 32 (2006) 350-353.

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Moško, M., Vagner, P., Bajdich, M., Schaepers, T., : Coherent „metallic“ resistance and medium localization in a disordered one-dimensional insulator. Phys. Rev. Lett. 91 (2003) 136803.

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Vagner, P., Markoš, P., Moško, M., Schaepers, T., : Coherent resistance of a disordered one-dimensional wire: Expressions for all moments and evidence for non-Gaussian distribution. Phys. Rev. B 67 (2003) 165316.

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Mošková, A. and Moško, M.: Phase-shift analysis of two-dimensional carrier-carrier scattering in GaAs and GaN: Comparison with Born and classical approximations, Phys. Rev. B 61 (2000) 3048.

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Moško, M. and Vagner, P.: Born approximation versus the exact approach to carrier-impurity collisions in a one-dimensional semiconductor: Impact on the mobility, Phys. Rev. B 59 (1999) R10445-R10448.

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Moško, M. and Kálna, K.: Carrier capture into a GaAs quantum well with a separate confinement region: comment on quantum and classical aspects, Semicond. Sci Technol. 14 (1999) 790-796.

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doc. RNDr. Moško Martin, DrSc.