doc. RNDr. Moško Martin, DrSc.

Krško, O., Plecenik, T., Moško, M., Haidry, A., Durina, P., Truchly, M., Grančič, B., Gregor, M., Roch, T., Satrapinsky, L., Mošková, A., Mikula, M., Kúš, P., and Plecenik, A.: Highly sensitive hydrogen semiconductor gas sensor operating at room temperature, Procedia Engn. 120 (2015) 618-622.

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Plecenik, T., Moško, M., Haidry, A., Durina, P., Truchly, M., Grančič, B., Gregor, M., Roch, T., Satrapinskyy, L., Mošková, A., Mikula, M., Kúš, P., and Plecenik, A.: Fast highly-sensitive room-temperature semiconductor gas sensor based on the nanoscale Pt-TiO2-Pt sandwich, Sensors Actuators B 207 (2015) 351-361.

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#     23. Wu, T.: Gongneng Cailiao/J. Functional Mater. 49 (2018) 01197+01208.
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Plecenik, A., Haidry, A.A., Plecenik, T., Durina, P., Truchly, M., Moško, M., Grančič, B., Gregor, M., Roch, T., Satrapinsky, L., Mošková, A., Mikula, M., and Kúš, P.: Metal oxide gas sensors on the nanoscale, Proc. SPIE 9083 (2014) 9083OY.

1. Eom, N.S.A.: Sensors 17 (2017) 2750.
2. Shepa, I.: Ceramics Inter. 44 (2018) 17925.
3. Umar, A.: Sensors Actuators B 304 (2020) 127352.

Feilhauer, J., Moško, M., : Coexistence of diffusive resistance and ballistic persistent current in disordered metallic rings with rough edges: possible origin of puzzling experimental values. Phys. Rev. B 88 (2013) 125424, also arXiv: 1203.6512v2 (2012).

1. Dietz, O.: Phys. Rev. B 86 (2012) 201106.
2. Doppler, J.: New J. Phys. 16 (2014) 053026.

Mošková, A., Moško, M., Tóbik, J., : Theoretical study of persistent current in a nanoring made of a band insulator. Phys. Status Solidi B 250 (2013) 147-159.

1. Shyu, F.L.: Solid State Comm. 188 (2014) 53.
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3. Ribeiro, A.V.: Phys. Status Solidi B 253 (2016) 545.
4. Lavanya, C.U.: Physica E‏ 126 (2021) 114500.

Feilhauer, J., Moško, M., : Conductance and persistent current in quasi-one-dimensional systems with grain boundaries: Effects of the strongly reflecting and columnar grains. Phys. Rev. B 84 (2011) 085454.

1. Tamura, R.: Phys. Rev. B 86 (2012) 205416.
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3. Mil’nikov, G.: Phys. Rev. B 88 (2013) 155406.
4. Ying, L.: Phys. Rev. B 96 (2017) 165407.

Feilhauer, J., Moško, M., : Quantum and Boltzmann transport in a quasi-one-dimensional wire with rough edges. Phys. Rev. B 83 (2011) 245328.

1. Tamura, R.: Phys. Rev. B 86 (2012) 205416.
2. Xiao, X.-B.: Chinese Phys. Lett. 29 (2012) 087202.
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8. Doppler, J.: New J. Phys. 16 (2014) 053026.
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Moško, M., Németh, R., Krčmár, R., Indlekofer, K., : Luttinger liquid and persistent current in a continuous mesoscopic ring with a weak link. Phys. Rev. B 79 (2009) 245323.

1. Shakouri, Kh.: J. Phys.-Cond. Matter 23 (2011) 225801.
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Németh, R., Moško, M., : One-dimensional ring with Kronig–Penney periodic potential: Persistent currents at full filling. Physica E 40 (2008) 1498.

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Feilhauer, J., Moško, M., : Persistent current in a disordered mesoscopic ring with many channels: Scattering-matrix based calculation. Physica E 40 (2008) 1582.

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4. Luo, Z.-H.: Acta Phys. Sinica 61 (2012) 057303.

Krčmár, R., Gendiar, A., Moško, M., Németh, R., Vagner, P., Mitas, L., : Persistent current of correlated electrons in mesoscopic ring with impurity. Physica E 40 (2008) 1507-1509.

     1. Reboredo, F.A.: J. Chem. Phys. 136 (2012) 204101.

Moško, M., Vagner, P., Gendiar, A., Németh, R., : Coherent transport of interacting electrons through a single scatterer. Physica B 378-380 (2006) 908.

 1. Hinsche, N.F.: Phys. Rev. A 79 (2009) 023822.

Vagner, P., Moško, M., Németh, R., Wagner, L., and Mitas, L.: Hartree-Fock versus quantum Monte Carlo study of persistent current in a one-dimentional ring with single scatterer, Physica E 32 (2006) 350-353.

1. Mobini, A.: Physica E 101 (2018) 162.

Moško, M., Vagner, P., Bajdich, M., Schaepers, T., : Coherent „metallic“ resistance and medium localization in a disordered one-dimensional insulator. Phys. Rev. Lett. 91 (2003) 136803.

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Vagner, P., Markoš, P., Moško, M., Schaepers, T., : Coherent resistance of a disordered one-dimensional wire:  Expressions for all moments and evidence for non-Gaussian distribution. Phys. Rev. B 67 (2003) 165316.

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Mošková, A. and Moško, M.: Phase-shift analysis of two-dimensional carrier-carrier scattering in GaAs and GaN: Comparison with Born and classical approximations, Phys. Rev. B 61 (2000) 3048.

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Moško, M. and Vagner, P.: Born approximation versus the exact approach to carrier-impurity collisions in a one-dimensional semiconductor: Impact on the mobility, Phys. Rev. B 59 (1999) R10445-R10448.

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Moško, M. and Kálna, K.: Carrier capture into a GaAs quantum well with a separate confinement region: comment on quantum and classical aspects, Semicond. Sci Technol. 14 (1999) 790-796.

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Vagner, P., Munzar, L., and Moško, M.: Calculation of excitonic absorption spectrum of GaAs quantum wire free-standing in vacuum, Acta Physica Polonica A 92 (1997) 1038.

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Kálna, K., Moško, M., and Peeters, F.: Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering, Applied Phys. Lett. 68 (1996) 117.

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Kálna, K. and Moško, M.: Electron capture in quantum wells via scattering by electrons, holes and optical phonons, Phys. Rev. B 54 (1996) 17730.

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Moško, M., Mošková, A., and Cambel, V.: Carrier-carrier scattering in photoexcited intrinsic GaAs quantum wells and its effect on femtosecond plasma thermalization, Phys. Rev. B 51 (1995) 16860.

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