Ing. Dubecký František, CSc.

Šagátová, A., Zaťko, B., Nečas, V., Dubecký, F., Tu, L.A., Sedlačková, K., Boháček, P., and Zápražný, Z.: From single GaAs detector to sensor for radiation imaging camera, Applied Surface Sci 461 (2018) 3-9.

1. Xu, L.: Materials 12 (2019) 1192.
2. Turkington, G.: J. Instrument. 14 (2019) P10018.
#     3. Xu, J.: Rengong Jingti Xuebao/J. Synthetic Crystals 48 (2019) 975.
4. Chen, J.: Precision Engn.-J. Inter. Soc for Precision Engn. Nanotechnol. 62 (2020) 71.
5. Turkington, G.: Inter. Nuclear Phys. Conf. – INPC2019 (2020) 1643.
6. Leyva-Fabelo, A.: Revista Cubana De Fisica 38 (2021) 4.
7. Zhang, H.L.: Crystal Res. Technol. 57 (2022) 2100247.
8. Karthieka, R.R.: Electron. Mater. Lett. 18 (2022) 304.
9. Zhu, Z.F.: Nuclear Sci Techniq. 33 (2022) 85.
10. Sun, X.: Acta Phys. Sinica 71 (2022) 178102.

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Zápražný, Z., Sedlačková, K., Sekáčová, M., Dubecký, F., Skuratov, V.A., Korytár, D., and Nečas, V.: Schottky barrier detectors based on high quality 4H-SIC semiconductor: electrical and detection properties, Applied Surface Sci 461 (2018) 276-280.

1. Zhou, Y.: Carbon 148 (2019) 387.
2. Dong, P.: IEEE Access 7 (2019) 170385.
3. Sarac, Y.: J. Alloys Comp. 824 (2020) 153899.

Dubecký, F., Kindl, D., Hubík, P., Mičušík, M., Dubecký, M., Boháček, P., Vanko, G., Gombia, E., Nečas, V., and Mudroň, J.: A comparative study of Mg and Pt contacts on semi-insulating GaAs: electrical and XPS characterization, Applied Surface Sci 395 (2017) 131-135.

1. Xiong, T.: Applied Surface Sci A427 (2018) 1107.
2. Zhou, Y.: Metals 9 (2019) 311.
3. Niu, Q.: Dalton Trans. 49 (2020) 11120.
4. Zhou, L.: J. Water Process Engn. 36 (2020) 101168.
5. Bendahmane, B.: Sensors 20 (2020) 2158.
6. Li, R.: Energy Storage Mater. 29 (2020) 223.
7. Aldawsari, A.M.: J. Alloys Comp. 857 (2021) 157551.
8. Yu, X.: Catalysts 11 (2021) 232.
9. Zhang, S.S.: ACS Omega 6 (2021) 25506.
10. Guo, S.: Vacuum 197 (2022) 110792.
11. Predoi, D.: Coatings 12 (2022) 702.
12. Hwang, Y.Y.: Energy Storage Mater. 51 (2022) 108.
13. Afzal, S.: Applied Surface Sci 600 (2022) 154026.

Šagátová, A., Zaťko, B., Dubecký, F., Ly Anh, T., Nečas, V., Sedlačková, K., Pavlovič, M., and Fulop, M.: Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons, Applied Surface Sci 395 (2017) 66-71.

1. Turkington, G.: Nuclear Instr. Methods in Phys. Res. A 911 (2018) 55.
2. Ni, W.: Radiation Phys. Chem. 152 (2018) 43.
3. Geremew, A.K.: Nanoscale 11 (2019) 8380.
4. Xu, Y.-C.: J. Phys. Chem. Solids 127 (2019) 76.
#     5. Turkington, G.: Proc. IEEE Nuclear Sci Symp. Medical Imag. Conf. NSS/MIC 2018, no. 8824504.
6. Kruchonak, U.: Nuclear Instr. Methods in Phys. Res. A  975 (2020) 164204.
7. Peng, J.: Nuclear Instr. Methods in Phys. Res. A  969 (2020) 164017.
8. Chen, J.: Precision Engn.-J. Inter. Soc for Precision Engn. Nanotechnol. 62 (2020) 71.
9. Shen, Y.: Nanomater. 10 (2020) 340.
10. He, J.: Optical Mater.‏ 111 (2021) 110611.
11. Singh, C. N.: Phys. Rev. Mater. 5 (2021) 073802.
12. Liu, X.T.: J. Phys. D 55 (2022) 295105.
13. Chakravorty, A.: J. Phys. D 55 (2022) 505301.

Dubecký, F., Osvald, J., Kindl, D., Hubík, P., Dubecký, M., Gombia, E., Šagátová, A., Boháček, P., Sekáčová, M., and Nečas, V.: Photocurrent spectra of semi-insulating GaAs M-S-M diodes: role of the contacts, Solid-State Electr. 118 (2016) 30-35.

#       1. Abdulkhaev, O.: Inter. Conf. Inf. Sci Comm. Techn. –  ICISCT 2020, art. no. 9351463.

Zaťko, B., Šagátová, A., Sedlačková, K., Nečas, V., Dubecký, F., Solard, M., and Granja, C.: Detection of fast neutrons from D-T nuclear reaction using 4H-SiC radiation detector, Inter. J. Modern Phys.: Conf. Ser. 44 (2016) 1660235.

1. Pavlovic, M.: AIP Conf. Proc. 1996 (2018) 020037.

Zaťko, B., Dubecký, F., Šagátová, A., Sedlačková, K., and Ryć, L.: High resolution alpha particle detectors based on 4H-SiC epitaxial layer, J. Instrument. 10 (2015) C04009.

 1. Torrisi, L.: J. Electronic Mater. 46 (2017) 4242.
2. Liu, L.Y.: Diamond Related Mater. 73 (2017) 177.
3. Chernykh, S.V.: Nuclear Instr. Methods in Phys. Res. A 845 (2017) 52.
4. Sciuto, A.: J. Electron. Mater. 46 (2017) 6403.
5. Zhao, S.: Nuclear Instr. Methods in Phys. Res. A 910 (2018) 35.
6. Chernykh, A.V.: Technical Phys. Lett. 44 (2018) 942.
7. Ye, X.: Chinese Phys. B 27 (2018) 087304.
8. Taylor, N.R.: J. Radioanalyt. Nuclear Chem. 320 (2019) 441.
9. Sandupatla, A.: Micromach. 11 (2020) 519.
10. Chaudhuri, S.K.: J. Applied Phys. 128 (2020) 114501.
11. Jia, Y.: Nuclear Instr. Methods in Phys. Res. A 997 (2021) 165166.
12. Kleppinger, J.W.: Applied Phys. Lett. 119 (2021) 063502.
13. Chaudhuri, S.K.: J. Applied Phys. 130 (2021) 074501.
14. Kleppinger, J.W.: J. Applied Phys. 129 (2021) no. 24.
15. Yang, T.: Mater. Adv. 2 (2021) 6744.
16. Capan, I.: Electronics 11 (2022) 532.
17. Karadavut, O.: Applied Phys. Lett. 121 (2022) 012103.
18. Napoli, M.D.: Front. Phys. 10 (2022) 898833.

Zaťko, B., Sedlačková, K., Dubecký,  F., Šagátová, A., Boháček, P., and Nečas, V.: Semiconductor detector based on 4H-SiC and analysis of its active region thickness, J. Instrument. 9 (2014) C05041.

1. Raja, P. V.: J. Instrument. 12 (2017) P08006.

Šagátová, A., Zaťko, B., Pavlovič, M., Sedlačková, K., Hybler, P., Dubecký, F.,  and Nečas, V.: GaAs detectors irradiated by low doses of electrons, J. Instrument. 9 (2014) C04036.

1. Lioliou, G.: J. Applied Phys. 119 (2016) 124507.
2. Lioliou, G.: Nuclear Instr. Methods in Phys. Res. A  813 (2016) 1.
3. Lioliou, G.: Nuclear Instr. Methods in Phys. Res. A  836 (2016) 37.
4. Lioliou, G.: J. Applied Phys. 122 (2017) 244506.
5. Lioliou, G.: X-Ray Spectrometry 47 (2018) 201.
6. Lioliou, G.: J. Geophys. Res.-Space Phys. 123 (2018) 7568.
7. Torrisi, A.: Nuclear Instr. Methods in Phys. Res. A 922 (2019) 250.
8. Lioliou, G.: Nuclear Instr. Methods in Phys. Res. A  946 (2019) 162670.
9. Peng, J.: Nuclear Instr. Methods in Phys. Res. A 969 (2020) 164017.

Dubecký, M., Dubecký, F., : The work functions of Au/Mg decorated Au(100), Mg(001), and AuMg alloy surfaces: a theoretical studies. J. Chem. Phys. 141 (2014) 094705.

1. Arai, H.: J. Vacuum Sci Technol. B 34 (2016) 040607.
2. Cvetkovic, V.S.: Metals 7 (2017) 95.
3. Kawano, H.: Progress in Surface Sci 97 (2022) 100583.

Šagátová, A., Zaťko, B., Sedlačková, K., Nečas, V., Dubecký, F., Boháček, P., and Chodák, I.: Semi-insulating GaAs detectors optimized for fast neutron detection, J. Instrument. 8 (2013) C03016.

 1. Chernykh, A.V.: J. Instrument. 10 (2016) C01021.
2. Chernykh, A.V.: J. Instrument. 11 (2016) C12005.
3. Pavlovic, M.: AIP Conf. Proc. 1996 (2018) 020037.
4. Chernykh, S.V.: Instrum. Experiment. Techniq. 62 (2019) 312.

Dubecký, F., Dubecký, M., Hubík, P., Kindl, D., Gombia, E., Baldini, M., and Nečas, V.: Unexpected current lowering by a low work-function metal contact: Mg/SI–GaAs,. Solid-State Electr. 82 (2013) 72-76.

1. Chen, B.: Applied Phys. Lett. 110 (2017) 133504.
2. Chernykh, S.V.: Instrum. Experimen. Techniq. 61 (2018) 665.
3. Jiang, H.Y.: IEEE J. Photovolt. 12 (2022) 1102.

Dubecký, F., Gombia, E., Ferrari, C., Zaťko, B., Vanko, G., Baldini, M., Kováč, J., Baček, D., Kováč, P., Hrkút, P., and Nečas, V.: Characterization of epitaxial 4H-SiC for photon detectors. J. Instrument. 7 (2012) P09005.

1. Liu, L.-Y.: Sensors (2017) 2334.

Zaťko, B., Dubecký, F., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Nečas, V., : Detector of fast neutrons based on silicon carbide epitaxial layers. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 151-154.

       1. Liu, L.Y.: Diamond Related Mater. 73 (2017) 177.
#     2. Ouyang, X.: Yuanzineng Kexue Jishu/Atomic Energy Sci Technol. 53 (2019) 1999.
#     3. Liu, L.: Yuanzineng Kexue Jishu/Atomic Energy Sci Technol. 56 (2022) 1987.

Zaťko, B., Dubecký, F., Boháček, P., Huran, J., Nečas, V., and Ryc, L.: Development and evaluation of semi-insulating GaAs detectors in hot plasmas diagnostics, Nuclear Instr. Methods Phys. Res. A 633 (2011) S131-S133.

1. Chernykh, S.V.: Instrum. Experimen. Techniq. 61 (2018) 665.
2. Gao, R.L.: Sci China-Phys. Mechan. Astron. 62 (2019) 122012.

Zaťko, B., Sedlačková, K., Dubecký, F., Boháček, P., Sekáčová, M., and Nečas, V.: Detection of fast neutrons using detectors based on semi-insulating GaAs. J. Instrument. 6 (2011) C12047.

1. Chernykh, A.V.: J. Instrument. 10 (2016) C01021.
2. Chernykh, A.V.: J. Instrument. 11 (2016) C12005.
3. Hodgson, M.: Measurement Scie Technol. 28 (2017) 105501.
4. Chernykh, S.V.: Instrum. Experimen. Techniq. 62 (2019) 312.
5. Ozden, S.: Inter. J. Surface Sci Engn. 13 (2019) 79.

Dubecký, F., Zaťko, B., Hubík, P., Gombia, E., Boháček, P., Huran, J., : A new kind of quasi-ohmic metallization in semi-insulating GaAs: Study of electrical characteristics. Nuclear Instr. and Methods in Phys. Res. A 607 (2009) 132-134.

  1. Leau W.: Applied Surface Sci 257 (2011) 7286.

Ladzianský, M., Šagátová, A., Nečas, V., Dubecký, F., and Linhart, V.: Deep traps study of radiation-damaged semi-insulating GaAs detectors introduced by neutrons, Nuclear Instr. and Methods in Phys. Res. A 607 (2009) 135-137.

1. Meshkian, M.: Nuclear Instr. and Methods in Phys. Res. A 788 (2015) 73.
2. Lioliou, G.: Nuclear Instr. Methods in Phys. Res. A  813 (2016) 1.
3. Garnica, O.: IEEE Trans. Nuclear Sci 64 (2017) 1095.
4. Lioliou, G.: J. Applied Phys. 122 (2017) 244506.
5. Lioliou, G.: X-Ray Spectrom. 47 (2018) 201.
6. Lioliou, G.: J. Geophys. Res.-Space Phys. 123 (2018) 7568.
7. Lioliou, G.: Nuclear Instr. Methods in Phys. Res. A  946 (2019) 162670.

Zaťko, B., Dubecký, F., Přibil, J., Boháček, P., Frollo, I., Ščepko, P., Mudroň, J., Grybos, P., Nečas, V., : On the development of portable X-ray CT mini-system using semi-insulating GaAs radiation imaging detectors. Nuclear Instrum. Methods in Phys. Res. A 607 (2009) 67-70.

     1. Mouleeswaran, D.: J. Crystal Growth 362 (2013) 238.

Přibil, J., Zaťko, B., Frollo, I., Dubecký, F., Ščepko, P., Mudroň, J., : Quantum imaging X–ray CT systems based on GaAs radiation detectors using perspective imaging reconstruction techniques, Measurement Sci Rev. 9, Sec. 3 (2009) 27-32.

*    1. Avenel-Le Guerroue, M.L.: PhD Thesis. Grenoble: CEA – LETI – Direction de la Recherche Technologique 2012.
2. Wells, K.: Applied Radiat. Isotopes 70 (2012) 1729.
3. Jin, G.: Measurement Sci Rev. 12 (2012) 296.
4. D’Aillon, E.G.: Nuclear Instrum. Methods in Phys. Res. A 727 (2013) 126.

Šagátová-Perďochová, A., Dubecký, F., Zaťko, B., Chodák, I., Ladzianský, M., and Nečas, V.: Detectors of fast netrons based on semi-insulating GaAs with neutron converter layers, Nuclear Instr. and Methods in Phys. Res. A 576 (2007) 56-69.

1. Guo, J.M.: Nuclear Instr. and Methods in Phys. Res. A 605 (2009) 69.
2. Dizaji, H.: Chinese Phys. Lett. 31 (2014) 012901.
3. Chernykh, A.V.: J. Instrument. 10 (2015) C01021.
4. Kasani, H.: J. Electron. Mater. 46 (2017) 2548.
5. Chernykh, S.V.: Instrum. Experimen. Techniq. 62 (2019) 312.

Dubecký, F., Ferrari, C., Korytár, D., Gombia, E., Nečas, V., : Performance of semi-insulating GaAs-based radiation detectors: Role of key physical parameters of base mnaterials. Nuclear Instr. and Methods in Phys. Res. A 576 (2007) 27-31. (VEGA 2/7170/27).

      1. Celik, A.: X-Ray Spectrometry 37 (2008) 490.
*    2. Akimov, J.K.: Poluprovodnikovyje detektory jadernych izlučenij. Dubna: 2009. 277 s. ISBN 978-5-9530-0213-4.
*    3. Avenel-Le Guerroue, M.L.: PhD Thesis. Grenoble: CEA – LETI – Direction de la Recherche Technologique 2012.
4. Manifacier, J.C.: Solid-State Electr. 80 (2013) 45.
5. Mouleeswaran, D.: J. Crystal Growth 362 (2013) 238.
6. D’Aillon, E.G.: Nuclear Instrum. Methods in Phys. Res. A 727 (2013) 126.

Zaťko, B., Dubecký, F., Procházková, O., and Nečas, V.: Role of electrode metalllization in the performance of bulk semi-insulating InP radiation detectors, Nuclear Instr. and Methods in Phys. Res. A 576 (2007) 98-102.

*  1. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.
2. Bilgili, A.K.: J. Applied Phys. 125 (2019) 035704.

Zaťko, B., Dubecký, F., : Performance of a Schottky surface barrier radiation detector based on bulk undoped semi-insulating GaAs at reduced temperature. IEEE Trans. Nuclear Sci 53 (2006) 625-629.

      1. Sagatova-Perd’ochova, A.: Nuclear Instr. Methods Phys. Res. A 591 (2008) 98.

Dubecký, F., Hulicius, E., Frigeri, P., Šagátová-Perďochová, A., Zaťko, B., Hubík, P., Gombia, E., Boháček, P., Pangrác, J., Franchi, S., Nečas, V., : Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode. Nuclear Instr. and Methods in Phys. Res. A 563 (2006) 159-162.

      1. Manifacier, J.C.: Solid-State Electr. 54 (2010) 1511.
*    2. Avenel-Le Guerroue, M.L.: PhD Thesis. Grenoble: CEA – LETI – Direction de la Recherche Technologique 2012.

Dubecký, F., Šagátová-Perďochová, A., Ščepko, P., Zaťko, B., Sekerka, V., Nečas, V., Sekáčová, M., Hudec, M., Boháček, P., and Huran, J.: Digital X-ray portable scanner based on monolithic semi-insulating GaAs detectors: General description and first “quantum” images, Nuclear Instr. and Methods in Phys. Res. A 546 (2005) 118-124.

1. Iacobaeus, C.: IEEE Trans. Nuclear Sci 53 (2006) 554.
2. Zentai, G.: Proc. 2007 IEEE Inter. Workshop on Imaging Systems Techniques art. no. 4258788.
3. Jackson, J.B.: Measurement Sci Technol. 20 (2009) 075502.
*     4. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.
#     5. Prokopyev, D.G.: Proc. IFOST 2012 (2012) art. no. 6357750.
6. Veale, M. C.: Nuclear Instrum. Methods in Phys. Res. A 752 (2014) 6.
7. Turkington, G.: Nuclear Instr. Methods in Phys. Res. A 911 (2018) 55.

Zaťko, B., Dubecký, F., Ščepko, P., Melov, V., Herms, M., Haupt, L., : Performance study of monolithic line radiation detector based on semi-insulating GaAs using X-ray source. Nuclear Instr. and Methods in Phys. Res. A 551 (2005) 78-82.

      1. Paszkowicz, W.: Nuclear Instr. Methods Phys. Res. A 551 (2005) 162.
2. Sagatova-Perd’ochova, A.: Nuclear Instr. Methods Phys. Res. A 591 (2008) 98.
*     3. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.

Dubecký, F., Ščepko, P., Loukas, D., Zaťko, B., Sekerka, V., Nečas, V., Šagátová-Perďochová, A., Sekáčová, M., Boháček, P., Hudec, M., Huran, J., : Application of monolithic strip line radiation detector based on semi-insulating GaAs in X-ray portable scanner. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 314-320.

      1. Pino, R.: J. Crystal Growth 290 (2006) 29.
2. Zwerger, A.: Nuclear Instr. Methods A 576 (2007) 23.
*     3. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.

Šagátová-Perďochová, A., Nečas, V., Ly Anh, T., Dubecký, F., Boháček, P., Sekáčová, M., Pavlicová, V., :Influence of top contact topology on detection properties of semi-insulating GaAs detectors. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 103-110.

*     1. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.

Kaminskii, V., Pawlowski, M., Kozlowski, R., Surma, B., Dubecký, F., Yamada, M., Fukuzawa, M., :Investigation of compensation defect centres in semi-insulating InP crystals. Eur. Phys. J. Appl. Phys. 27 (2004) 171-175.

      1. Tan, X.M.: Zeitschrift Naturforschung A 61 (2006) 371.
2. Dogan, S.: J. Luminescence 128 (2008) 232.

Huran, J., Hotový, I., Dubecký, F., Balalykin, N., : N-doped a-SiC:H films deposited by PECVD annealed by pulse electron beam. In: SIMC-XIII-2004. Ed. Wang, Z. et al. Piscataway: IEEE, 2004. P. 93-97.

     1. Hong, R.D.: Spectroscopy Lett. 43 (2010) 298.

Dubecký, F., Boháček, P., Zaťko, B., Sekáčová, M., Huran, J., Šmatko, V., Fornari, R., Gombia, E., Mosca, R., Pelfer, P., : Role of electrode technology in radiation detector based on semi-insulating InP in development of detector array. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 181-191.

     1. Zavadil, J.: J Optoelectr. Advanced Mater. 9 (2007) 1221.
2. Kim, H.: J. Electrochem. Sci Technol. 9 (2018) 78.

Boháček, P., Korytár, D., Ferrari, C., Dubecký, F., Surma, B., Zaťko, B., Šmatko, V., Huran, J., Fornari, R., Sekáčová, M., Strzelecka, S., : Correlation of crystal defects and galvanomagnetic parameters of semi-insulating InP with performance of radiation detectors fabricated from characterised materials. Materials Sci Engn. B 91-92 (2002) 516-520.

*    1. Pelfer, P.G: SIMC-XII-2002. Piscataway: IEEE 2002. P. 273.
2. Gorodynskyy, V.: Nuclear Instr. Methods A 555 (2005) 288.
*    3. Perďochová, A.: PhD. Thesis. Bratislava: FEI STU 2005.
4. Zdansky, K.: IEEE Trans. Nuclear Sci 56 (2009) 2997.

Morvic, M., Boháček, P., Betko, J., Dubecký, F., Huran, J., Sekáčová, M., : Electrical properties of semi-insulating GaAs irradiated with neutrons. Nuclear Instr. Methods in Phys. Res. B 197 (2002) 240-246.

1. Ladziansky, M.: In: ASDAM 2008. Piscataway: IEEE 2008. P. 179.
2. Sagatova-Perd’ochova, A.: Nuclear Instr. Methods Phys. Res. A 591 (2008) 98.
3. Bialous, M.: Applied Physics B 96 (2009) 471.
*     4. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.
5. Sedlackova, K.: Nuclear Instrum. Methods Phys. Res. A 709 (2013) 63.
6. Aldemir, D.A.: Silicon 11 (2019) 2647.

Caria, M., Barberini, L., Cadeddu, S., Giannattasio, A., Rusani, A., Sesselego, A., Lai, A., D’Auria, S., and Dubecký, F.: Gallium arsenide photodetectors for imaging in the far ultraviolet region. Applied Phys. Lett. 81 (2002) 1506-1508.

1. Monroy, E.: Semicond. Sci Techn. 18 (2003) R33-R51.
2. Blank, T.V.: Semiconductors 37 (2003) 999.
3. Nayak, J.: Physica E 24 (2004) 227.
4. Khudaverdyan, S.K.: Solid-State Electron. 49 (2005) 634.
5. Khudaverdyan, S.: J. Physics D 38 (2005) 272.
6. Devika, M.: J. Electrochem. Soc. 154 (2007) H67.
7. Khudaverdyan, S.: J. Physics D 40 (2007) 7669.
8. Mokeev, D.: SIBCON-2009: Inter. Siberian Conf. Control and Comm. IEEE (2009) P. 162.
9. Chamekh, M.: European Phys. J. – Applied Phys. 52 (2010) 20502.
#    10. Legky, V.N.: Applied Phys. 2 (2011) 112.
11. Yuan, C.: Nanoscale 6 (2014) 1119.
12. Kumar, B.: Mater. Research Bull. 89 (2017) 108.
13. Oh, S.: ECS J. Solid State Sci Technol. 6 (2017) Q79.
14. Yuvaraja, S.: J. Mater. Sci-Mater. Electr. 30 (2019) 7618.
15. Hou, X.: J. Phys. D‏ 54 (2021)    043001.
16. Liao, Y.K.: Adv. Optic. Mater. 10 (2022) 2200062.
17. Zou, J.Y.: J. Nanoelectron. Optoelectron. 17 (2022) 702.
#    18. Ilik, S.: Proc. SMACD 2022, Code 180847.

Dubecký, F., Zaťko, B., Nečas, V., Sekáčová, M., Fornari, R., Gombia, E., Boháček, P., Krempasky, M., and Pelfer, P.: Recent improvements in detection performances of radiation detectors based on bulk semi-insulating InP, Nuclear Instrum. Methods in Phys. Research A 487 (2002) 27-32.

1. Gorodynskyy, V.: Nuclear Instr. Methods A 555 (2005) 288.
#     2.   Procházková, O.: J. Crystal Growth 275 (2005)  e959.
3. Pino, R.: J. Crystal Growth 290 (2006) 29.
4. Celik, A.: X-Ray Spectrometry 37 (2008) 490.
5. Yatskiv, R.: Nuclear Instr. Methods A 598 (2009) 759.
6. Zdansky, K.: IEEE Trans. Nuclear Sci 56 (2009) 2997.
7. Owens, A.: Compound Semicond. Radiation Detectors. CRC Press-Taylor 2012 ISBN:978-1-4398-7313-7. P. 287-368.
8. Mouleeswaran, D.: J. Crystal Growth 362 (2013) 238.
9. Lioliou, G.: J. Applied Phys. 124 (2018) 195704.

Owens, A., Peacock, A., Bavdaz, M., Brammertz, G., Dubecký, F., Gostilo, V., Gryaznov, D., Haack, N., Krumrey, M., and Loupilov, A.: The X-ray response of InP: Part B, synchrotron radiation measurements, Nuclear Instr. Methods in Phys. A 491 (2002) 444-451.

#     1. Wenzel, K.-P.: European Space Agency, Spec. Publ. ESA SP 1268 (2003) 1.
2. Gorodynskyy, V.: Nuclear Instr. Methods A 555 (2005) 288.
3. Yatskiv, R.: Nuclear Instr. Methods A 598 (2009) 759.
4. Zdansky, K.: IEEE Trans. Nuclear Sci 56 (2009) 2997.
5. Yatskiv, R.: J. Instrum. 7 (2012) C10005.
6. Butera, S.: Sci Rep.7 (2017) 10206.
7. Butera, S.: Nuclear Instr. Methods in Phys. Res. A 908 (2018) 277.

Nečas, V., Ly Anh, T., Sekáčová, M., Darmo, J., Dubecký, F., Šagátová-Perďochová, A., : Investigation of performance of semi-insulating GaAs detectors irradiated by high γ doses. Nuclear Instr. Methods in Phys. A 458 (2001) 348-351.

*     1. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.
2. Khamari, S.: Nuclear Instr. and Methods in Phys. Res. B 269 (2011) 272.
3. Abhirami, K.M.: Radiation Phys. Chem. 91 (2013) 35.
4. Kumari, M.: Nuclear Instrum. Methods in Phys. Res. A 753 (2014) 116.
5. Rana, P.: Nuclear Instr. and Methods in Phys. Res. B 349 (2015) 50.
6. Sadhasivam, S.: Mater. Res. Bull. 74 (2016) 117.
7. Chauhan, R. P.: Nuclear Instr. Methods in Phys. Res. B  379 (2016) 78.
8. Garnica, O.: IEEE Trans. Nuclear Sci 64 (2017) 1095.
9. Peng, J.: Nuclear Instrum. Methods in Phys. Res. A 969 (2020) 164017.
10. Oufi, A.M.: Radiation Phys. Chem. 170 (2020) 108494.

Dubecký, F., Darmo, J., Krempasky, M., Sekáčová, M., Zaťko, B., Nečas, V., Pelfer, P., Senderák, R., Somora, M., Haralabidis, N., Loukas, D., Misiakos, K., Hlaváč, S., Kolesár, F., Boháček, P., Ruček, M., : On technology and performance of SAMO:: X- and γ-ray 32-pixel line detector based on semi-insulating GaAs and InP. Nuclear Instr. & Methods in Phys. Res. A 458 (2001) 152-157.

      1. Šatka, D.: Materials Sci & Engn. B 91-92 (2002) 239.
*    2. Perďochová, A.: PhD. Thesis. Bratislava: FEI STU 2005.

Pelfer, P., Dubecký, F., Fornari, R., Pikna, M., Gombia, E., Darmo, J., Krempasky, M., Sekáčová, M., : Present status and perspectives of the radiation detectors based on InP materials. Nuclear Instr. Methods in Phys. A 458 (2001) 400-405.

*   1. Owens, A.: ESLAB Report No. 2001/018, p. 1-9.
*   2. Owens, A.: ESLAB Report No. 2002/052/ST, p. 1-12.
3. Owens, A.: Nuclear Instr. & Methods A 487 (2002) 435.
4. Mikulec, B.: Nuclear Instr. & Methods A 510 (2003) 1.
5. Sellin, P.J.: Nuclear Instr. & Methods A 513 (2003) 332.
*   6.  Owens, A.: Proc. SPIE 4851 (2003) 1059.
7. Zavadil, J.: In: ASDAM 2004. Piscataway: IEEE 2004. P. 247.
8. Laird, J.S.: Nuclear Instr. Methods A 541 (2005) 228.
9. Gorodynskyy, V.: Nuclear Instr. Methods A 555 (2005) 288.
10. Zdansky, K.: IEEE Trans. Nuclear Sci 53 (2006) 3956.
11. Prochazkova, O.: J. Material. Sci-Mater. Electr. 19 (2008) 770.
12. Gorodynskyy, V.: IEEE Trans. Nuclear Sci 55 (2008) 2785.
13. Yatskiv, R.: Nuclear Instr. Methods A 598 (2009) 759.
14. Zdansky, K.: IEEE Trans. Nuclear Sci 56 (2009) 2997.
15. Grym, J.: Mater. Sci Engn. B 165 (2009) 94.
16. Fukuda, Y.: Nuclear Instr. Methods in Phys. Res. A 623 (2010) 460.

Darmo, J., Dubecký, F., Zaťko, B., Boháček, P., Sekáčová, M., Kvitkovič, J., Nečas, V., Pelfer, P., : The semi-insulating GaAs-based particle detector at IEE SAS: first imaging results. Nuclear Instr. & Methods in Phys. Res. A 458 (2001) 418-421.

      1. Mikulec, B.: Nuclear Instr. & Methods A 510 (2003) 1.
*     2. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.

Zaťko, B., Dubecký, F., Darmo, J., Euthymiou, P., Nečas, V., Krempasky, M., Sekáčová, M., Korytár, D., Csabay, O., Harmatha, L., Pelfer, P., : Electrical and detection performance of radiation detector based on bulk semi-insulating InP: Role of detector volume. In: ASDAM 2000. Eds. J.Osvald et al. Piscataway: IEEE 2000. ISBN 0-7803-5939-9. P. 429-432.

       1. Zdansky, K.: Semicond. Sci Technol. 16 (2001) 1002.

Dubecký, F., Darmo, J., Krempasky, M., Sekáčová, M., Zaťko, B., Boháček, P., Bešše, I., Ruček, M., Nečas, V., Pelfer, P., Senderák, R., Pinčík, E., Somora, M., Kolesár, F., Hudek, P., Kostič, I., : Technology and performance of x-and γ-ray 32 pixel line detector based on semi-insulating GaAs, J. Electrical Engn. 51 (2000) 30-35.

     1. Kordyasz, A.J.: Nuclear Instr. Methods A 545 (2005) 716.

Dubecký, F., Darmo, J., Zaťko, B., Fornari, R., Nečas, V., Krempasky, M., Pelfer, P., Sekáčová, M., Boháček, P., : X-ray and gamma-ray detectors based on bulk semi-insulating GaAs&InP: Present status and prospects. In: SIMC-XI. Eds. C.Jagadish and N.J. Welham. Piscataway: IEEE 2000. P. 151-158.

     1. Causley, R.L.: Physica B 302 (2001) 327.

Pelfer, P.G., Dubecký, F., Fornari, R., Pikna, M., Gombia, E., Zaťko, B., Darmo, J., Krempaský, M., and Sekáčová, M.: Semi-insulating InP detectors for solar neutrino experiment. In: ASDAM 2000 : 3rd Int. EuroConf. on Advanced Semiconductor Devices and Microsystems. Piscataway, IEEE 2000. P. 99-104.

1. Lioliou, G.: J. Applied Phys. 124 (2018) 195704.

Ivančo, J., Dubecký, F., Darmo, J., Krempasky, M., Bešše, I., Senderák, R., : Semi-insulating GaAs-based Schottky contacts for detector of ionising radiation: An effect of the interface treatment Nuclear Instr. Methods in Phys. Research A 434 (1999) 158-163.

    1. Šatka, D.: Materials Sci Engn. B 91-92 (2002) 239.
2. Bourgoin, J.C.: Nuclear Instr. & Methods A 487 (2002) 47.
*   3. Sopko, V.: APCOM. Bratislava: FEI STU, 2010.  ISBN: 978-80-227-3307-6. P. 228.
*    4. Avenel-Le Guerroue, M.L.: PhD Thesis. Grenoble: CEA – LETI – Direction de la Recherche Technologique 2012.

Korytár, D., Ferrari, C., Strzelecka, S., Šatka, A., Darmo, J., Dubecký, F., Hruba, L., : Study of crystal defects in radiation detectors grade semi-insulating GaAs. In: SIMC-X. Eds.: Z.Liliental-Weber and C.Miner. Piscataway: IEEE 1999. P. 331-334.

*     1. Avenel-Le Guerroue, M.L.: PhD Thesis. Grenoble: CEA – LETI – Direction de la Recherche Technologique 2012.

Darmo, J., Dubecký, F., Kordoš, P., Förster, A., : Annealing effect on concentration of EL-6like deep-level state in low-temperature-grown molecular beam epitaxial GaAs Applied Phys. Lett. 72 (1998) 590.

      1. Reddy, C.V.: Phys. Rev B 58 (1998) 1358.
2. Steinegger, T.: Physica B 308-310  (2001) 745.
#    3. Luo, Z.-J.: Gongneng Cailiao/J. Functional Mater. 42 (2011) 846.

Darmo, J., Dubecký, F., Hardtdegen, H., Hollfelder, M., Schmidt, R., : Deep-level states in MOVPE AlGaAs: The influence of carrier gas J. Crystal Growth 186 (1998) 13.

     1. Puron, E.: J. Applied Phys. 86 (1999) 418.
2. Bo, B.X.: J. Crystal Growth 268 (2004) 415.
3. Bo, B.X.: Japan. J. Applied Phys. 43 (2004) 3410.
4. Tang, X.: Inter. Conf. Comm., Circuits and Systems 1 (2004) 609.
5. Bo, B.: Proc. SPIE 6020 (2005) 60202T.
6. Dharmadasa, I.M.: Semicond. Sci Technol. 23 (2008) 035023.
7. Dharmadasa, I. M.: Adv. Thin-Film Solar Cells  (2013) 167.

Dubecký, F., Fornari, R., Darmo, J., Pikna, M., Gombia, E., Krempasky, M., Sekáčová, M., Hudek, P., Ruček, M., : Electrical and detection properties of the particle detectors based on LEC semi-insulating InP Nuclear Instr. Methods in Phys. Research A 408 (1998) 491.

     1. Gryaznov, D.V.: Instrum. Exp. Techn. 44 (2001) 462.
2. El-Abbassi, H.: Nuclear Instr. Methods A 466 (2001) 47.
3. Gorodynskyy, V.: Nuclear Instr. Methods A 555 (2005) 288.
4. Gorodynskyy, V.: IEEE Trans. Nuclear Sci 55 (2008) 2785.
5. Yatskiv, R.: Nuclear Instr. Methods A 598 (2009) 759.
6. Pekarek L.: 2008 IEEE 20th Inter. Conf. on Indium Phosphide and Related Materials (IPRM). IEEE (2008) P. 8.
7. Yatskiv, R.: 2008 IEEE 20th Inter. Conf. on Indium Phosphide and Related Materials (IPRM). IEEE (2008) P. 4.
8. Zdansky, K.: IEEE Trans. Nuclear Sci 56 (2009) 2997.
9. Yatskiv, R.: Nuclear Instr. Methods A 612 (2010) 334.
#   10. Yatskiv, R.: 12th Inter. Workshop on Radiation Imaging Detectors. Cambridge 2010. P. 161.
11. Yatskiv, R.: J. Instrum. 6 (2011) C01072.
*   12. Avenel-Le Guerroue, M.L.: PhD Thesis. Grenoble: CEA – LETI – Direction de la Recherche Technologique 2012.
13. Yatskiv, R.: J. Instrum. 7 (2012) C10005.

Mudroň, J., Müllerová, J., Dubecký, F., Huran, J., : Optical properties of InP:Fe irradiated by fast neutrons. In: ASDAM 98. Eds. J.Breza et al. Piscataway: IEEE 1998. ISBN 0-7803-4909-1. P. 235.

*      1. Niu, X.: US Patent 6,694,275, 2004.
#     2. Alhammade, H.T. B.: Nanosistemi, Nanomateriali, Nanotehnologii 20 (2022)  15.
3. Ben Arbia, M.: Mater. Sci Semicond. Process. 153 (2023) 107149.

Mudroň, J., Müllerová, J., Dubecký, F., : Optical properties of semi-insulating GaAs irradiated by neutrons Solid State Electron. 42 (1998) 243.

    1. Wang, C.W.: J. Vacuum Sci Technol. B 20 (2002) 1821.
#   2. Jiao, J.: J. Semicond. 33 (2012) 094006.

Pelfer, P., Dubecký, F., Fornari, R., Pikna, M., Krempasky, M., Gombia, E., Darmo, J., Mosca, R., Sekáčová, M., : Semi-insulating InP particle detectors for X- and gamma-ray detection, Mater. Res. Soc Symp. 487 (1998) 477.

      1. Gryaznov, D.V.: Instrum. Exp. Techn. 44 (2001) 462.
*    2. Owens, A.: ESLAB Report No. 2001/018. P. 1-9.
3. Zdansky, K.: Semicond. Sci Techn. 16 (2001) 1002.
4. Owens, A.: Nuclear Instr. Methods A 487 (2002) 435.
5. Gorodynskyy, V.: Nuclear Instr. Methods A 555 (2005) 288.
6. Zdansky, K.: IEEE Trans. Nuclear Sci 56 (2009) 2997.

Dubecký, F., Krempasky, M., Boháček, P., Sekáčová, M., Fornari, R., Gombia, E., Pikna, M., Pelfer, P., : Electrical and detection characteristics of improved particle detectors based on semi-insulating InP. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 269..

     1. Gorodynskyy, V.: Nuclear Instr. Methods A 555 (2005) 288.

Dubecký, F., Krempasky, M., Pelfer, P., Darmo, J., Pikna, M., Šatka, A., Sekáčová, M., Ruček, M., : GaAs detectors for hard X-ray astronomy Nuclear Phys. (Proc. Suppl.) B 54 (1997) 368.

     1. Kordyasz, A.J.: Nuclear Instr. Methods A 545 (2005) 716.
#   2. Lezhneva, G.M.: Russian Microelectr. 34 (2005) 229.

Darmo, J., Dubecký, F., Kordoš, P., Förster, A., : Annealing characteristics of native defects in low-temperature-grown MBE GaAs. In: 9th Conf. Semicond. Insul. Mater. 1996. Ed. Ch.Fontaine. IEEE Publ. 1996. P.67.

     1. Khirouni, K.: Solid-State Electron. 43 (1999) 589.

Dubecký, F., Darmo, J., Hlaváč, S., Benovič, M., Pikna, M., Pelfer, P., Förster, A., Kordoš, P., : Detection properties of LEC SI GaAs radiation detectors with the symmetrical contact configuration Nuclear Instr. Methods in Phys. A 377 (1996) 475.

     1. Le, Y.: High Energy Phys. Nuclear Phys. 22 (1998) 1092.
2. Kordyasz, A.J.: Nuclear Instr. Methods A 545 (2005) 716.
3. Ly Anh, T.: Nuclear Phys. B 150 (2006) 402.
4. Ha, J.H.: J. Korean Phys. Soc 52 (2008) 576.

Dubecký, F., Betko, J., Morvic, M., Darmo, J., Bešše, I., Hrubčín, L., Benovič, M., Pelfer, P., Gombia, E., Mosca, R., : Neutron irradiated undoped LEC SI GaAs: I. Galvanomagnetic, I-V, PC and alpha detection study. In: Gallium Arsenide Related Comp. 1995. Ed. P.G.Pelfer. Singapore: World Sci 1996. P. 152-157.

*    1. Nečas, V.: APCOM 1999. Liptovský Mikuláš: Military Acad. 1999. P. 134.
2. Islam, N.E.: Ultra-Wideband, Short-Pulse Electromagn. 5 (2002) 461.

Darmo, J., Dubecký, F., Lalinský, T., : Neutron irradiated undoped LEC SI GaAs: II. C-V and deep-level state analysis. In: Gallium Arsenide Related Comp. 1995. Ed. P.G.Pelfer. Singapore: World Sci 1996. P. 158-163.

     1. Kavaliauskiene, G.: Applied Phys. A 69 (1999) 415.

Dubecký, F., Darmo, J., Krempasky, M., Betko, J., Pikna, M., Weber, E., Pelfer, P., : On relation between detection parameters of SI GaAs particle detectors and physical properties of starting materials. In: 9th Conf. Semicond. Insul. Mater. 1996. Ed. Ch.Fontaine. IEEE Publ. 1996. P. 71.

     1. Longeaud, C.: Semicond. Sci Technol. 14 (1999) 747.

Darmo, J., Dubecký, F., Kordoš, P., Förster, A., Lüth, H., : Electrical properties and deep-level states in MBE GaAs layer grown at 250 C Materials Sci Engn. B 28 (1994) 393.

     1.  Look,  D.C.:  In:  Properties  of  GaAs. EMIS
2. Lagadas, M.: J. Mater. Sci Engn B 44 (1997) 355.
*   3. Bury, P.: In: ACOUSTICS ’97. Zvolen: TU, 1997. ISBN 80-228-0632-3. P.
132.
*   4. Bury, P.: In: Využitie akustických metód pri hodnotení vlastností materiálov. Žilina: Žilinská univ., 1997.  ISBN 80-7100-435-9. S. 29.
5. Kozlowski, R.: Proc. SPIE 3725 (1999) 209.
6. Ueng, H.J.: J. Applied Phys. 90 (2001) 5637.
7. Bury, P.: Acta Phys Slovaca 53 (2003) 189.
*    8. Bury, P.: Komunikácie – vedecké listy ŽU 5 (2003) 5-13.
*    9. Bury, P.: In: Silicon – News in Sci Technol. SNTS 2004. Bratislava: FMFI UK, 2004. ISBN 80-89186-03-3. P. 13.

Dubecký, F., Darmo, J., Bešše, I., Pelfer, P., : I-V and C-V characteristics of the Schottky lanier radiation detectors based on LEC semiinsulating GaAs. In: Proc. Conf. on Semi-Insulating III-V Mater. Ed. M.Godlewski. Singapore: World Sci Ltd 1994. P. 183.

    1. Mares, J.J.: J. Applied Phys. 82 (1997) 3358.

Dubecký, F., Darmo, J., Betko, J., Mozolová, Ž., Pelfer, P., : On the C-V analysis of Schottky barrier in undoped semi-insulating GaAs Semicond. Sci Technol. 9 (1994) 1654.

*     1. Chen, J.W.: In: Proc. 3th Inter. Workshop „GaAs Related Compounds“. Singapore:  World Sci.  Publ. 1996. P. 84.
2. Castaldini, A.: IoP  Confer. Ser. 149 (1996) 55-60.
3. Rogalla, M.: Nuclear Instrum. Meth. Phys. Res. A 300 (1996) 14.
*     4. Rogalla, M.: Proc. IEEE SSIMC 9 (1996) 357.
5. Hu, Y.F.: J. Applied Phys. 82 (1997) 3891.
6. Castaldini, A.: Nuclear Instr. Methods A 388 (1997) 417.
7. Castaldini, A. : Nuclear Instr. Methods A 410 (1998)79.
#   8. Lezhneva, G.M.: Russian Microelectr. 34 (2005) 229.

Darmo, J., Dubecký, F., : On the defect model of low temperature MBE GaAs. In: Proc. Conf. on Semi-Insulating III-V Mater. Ed. M.Godlewski. Singapore: World Sci Ltd 1994. P. 355.

    1. Betko, J.: J. of Applied Physics 86 (1999) 6243.
2. Ruda, H.: Phys. Rev. B 63 (2001) 5203.

Dubecký, F., Novák, J., Kordoš, P., : An efficient and low cost optical excitation system: Application to deep-level spectroscopy Measurement Sci Technol. 4 (1993) 538.

*      1. Darmo, J.: Kandidátska dizertačná práca. Bratislava: ElÚ SAV 1996.

Dubecký, F., Darmo, J., Darviras, M., Förster, A., Kordoš, P., Lüth, H., : Investigation of deep-level states in bulk and low- temperature MBE semi-insulating GaAs by admitance transient spectroscopy. In: Proc. 7th Conf. III-V Semi-Insulating Materials. Ed. C.J.Miner. Bristol: IoP Publ. 1993. P. 265.

     1. Goo, Ch.: Applied Phys. Lett. 69 (1996) 2543.

Dubecký, F., Darmo, J., Betko, J., Papaioannou, G., Ioannou, V., Baumgartner, M., : Study of deep acceptor states in undoped semi-insulating GaAs with low carbon content by transient spectroscopy techniques. Proc. 7th Conf. III-V Semi-Insulating Materials. Ed. C.J.Miner. Bristol: IoP Publ. 1993. P. 247.

*    1. Koutzarov, I.P.: In: Proc. 8th Int. Conf. on Semi-Insul. III-V Materials. Varšava: World Sci. Publ. 1994. P. 213.

Dubecký, F., Olejníková, B., : C-V analysis of the Schottky barrier inmsemi-insulating semiconductors J. Applied Phys. 69 (1991) 1769.

    1. Abbate, A.: IEEE Trans. Electron Devices 40 (1993) 1830.
*   2. Jones, B.K.: Int. Conf. Advanced Technol. Particle Phys. DR8 Report, CERN 1994.
3. Castaldini, A.: IOP Confer. Ser. 149 (1996) 55-60.
*   4. Castaldini, A.: Proc. IEEE SSIMC 9 (1996) 361.
*   5. Darmo, J.: Kandidátska dizertačná práca. Bratislava: ElÚ SAV 1996.
6. Castaldini, A.: IOP Conf. Ser. 160 (1998) 233.
7. Fraboni, B.: Physica B 401 (2007) 278.
8. Fraboni, B.: J. Applied Phys. 102 (2007) 073711.
9. Shanmugam, M.: Nanoscale 4 (2012) 7399.

Dubecký, F., Olejníková, B., : Determination of the deep-state concentration in semi-insulating GaAs based on new capacitance and conductans DLTS. In: Defect Control in Semicond. Ed. K.Sumino. Amsterdam: Elsevier Sci Publ. 1990. P. 1599.

     1. Gmucová, K.: Phys. Status Solidi A 135 (1993) 315.
*   2. Darmo, J.: Kandidátska diz. práca. Bratislava: ElÚ SAV 1996.

Dubecký, F., : Investigation of deep states in semi-insulating GaAs by new capacitance techniques Acta Phys. Polonica A 77 (1990) 83.

*     1. Darmo, J.: Kandidátska diz. práca. Bratislava: ElÚ SAV 1996.

Dubecký, F., : Characterization of deep defects in semi-insulating GaAs by capacitance and conductance DLTS with electrical and optical excitations. In: Mater. Sci Forum Defects in Semicond. 38-41 (1989) 1301.

*     1. Darmo, J.: Kandidátska dizertačná práca. Bratislava: ElÚ SAV 1996.

Dubecký, F., Šafránková, J., Olejníková, B., Szentpali, B., : DLTS, ODLTS and MCTS study of deep traps in the VPE GaAs Schottky barriers. In: Gallium Arsenide. Proc. 2nd Conf. Phys. Technol. GaAs and other III-V Semicond. Ed. E.Lendway. Aedermannsdorf: Trans. Techn. Publ. 1987. P. 147.

    1. Siyaanbol, W.E.: Solid State Comm. 74 (1990) 209.
*   2. Stuchlíková, L.: Int. Workshop Characterization of Semicond. Substrates and Struct. Bratislava, 1992.
3. Stuchlíková, Ľ.: Phys. Status Solidi A 138 (1993) 241.
*   4. Harmatha, Ľ.: Proc. 9th Int. Sci. Conf. Žilina, VŠDS 1993, 103.
5. Stuchlíková, L.: Czechosl. J. of Phys. 44 (1994) 745.
*   6. Stuchlíková, L.: Proc. of the Electronic Devices and Systems  Conf. Brno, 1995. P. 142.
*   7. Bury, P.: In: 16th Inter. Congress on Acoustics and 135th Meeting Acoustical Soc America. Woodburg: Acoustical Soc. America, 1998. ISBN 1-56396-815-0. P. 431.
*   8. Bury, P.: In: ELEKTRO ’99. Žilina: Univ. Žilina, 1999. ISBN 80-7100-605-X. S. 31.
*   9. Jamnický, I.: In: APCOM 2000. Lipt. Mikulas: Military Acad., 2000. P. 128.
*   10. Bury, P.: In: Proc. 17th Inter. Congress on Acoustics. Roma: Univ. Roma, 2002. ISBN 88-88387-07-2. P. 158.
*   11. Bury, P.: In: 12. konf. slov. fyzikov. Košice: Slov. fyzik. spol., 2002. ISBN 80-968655-5-2. S. 98.
*   12. Bury, P.: Komunikácie – vedecké listy ŽU 5 (2003) 5-13.

Dubecký, F., Šafránková, J., : DLTS and ODLTS study of deep traps in GaAs Schottky barriers. In: Proc. 7th Inter. School „Defects in Crystals“ Szczyrk 1985. Ed. E.Mizera. Singapore: World Sci. Publ. Co. 1986.

   1. Hubík, P.: Crystal Prop. and Prep. (Spec. Issue) 12 (1987) 167.

Dubecký, F., : Základy kapacitnej spektroskopie. In: Experimentální metody fyziky pevních látek 6. Charakterizace polovodičových materiálú. Praha: UK 1986. S.79.

*    1. Harmatha, L.: Elektrotechnika 88. Bratislava, EF SVŠT 1978. S.78.
*    2. Šrank, P.: Diplomová práca. Bratislava: KME EF STU 1986.
*    3. Mišík, M.: Diplomová práca. Bratislava: KME EF STU 1987.
*    4. Pogányi, D.: Diplomová práca. Bratislava: KF EF STU 1987.
*    5. Demian, V.: Diplomová práca. Bratislava: KME EF STU 1990.

Thurzo, I., and Dubecký, F.: On the role of the back contacts in DLTS experiments with Schottky diodes Phys. Status Solidi A 89 (1985) 689.

     1. Dóža, F.: Phys. Status Solidi A 104 (1987) 111.
2. Landfeld, R.: Applied Phys. A 44 (1987) 107.
*    3. Schroder, D.K.: Semiconductor Material and Device Characterization. J.Wiley 1990. P. 357.
*    4. Gaži, M.: Kandidátska diz. práca. Bratislava: EF STU 1992.
*    5. Kopányi, E.: Diplomová práca. Bratislava: EF STU 1993.
6. Grillot, P.N.: J. Applied Phys. 77 (1995) 676.
*    7. Schroder, D.K.: Semicond. Material & Device Characterization. 3rd ed. New Jersey: J. Wiley 2006. Chapt. 5.
8. Lauwaert, J.: J. Applied Phys. 109 (2011) 063721.
9. Ivanov, P. A.: Semicond. 45 (2011) 1306.
10. Ding, Y. M.: J. Applied Phys. 120 (2016) 135704.
11. Werner, F.: Progress In Photovolt. 26 (2018) 911.

Dubecký, F., Novák, J., Kordoš, P., : Observation of deep traps in LPE(p)AlGaAs-(n)GaAs heterojunctions for avalanche photodiode applications. In: 4th Int. Conf. Deep Level Impurities in Semicond. Eger 1983. P. 90.

     1. Brehme, S.: Solid State Comm. 59 (1986) 469.
2. Brehme, S.: Semicond. Sci. Technol. 7 (1992) 467.

Hrivnák, L., Dubecký, F., : The temperature and compensation dependence of the threshold voltage for switching effect due to the Poole-Frenkel and screening effects with application to chromium doped GaAs structures Acta Physica Slovaca 30 (1980) 233.

     1. Karel, F.: Semicod. Sci Technol. 7 (1992) 203.

Měřínsky, K., Betko, J., Dubecký, F., : Magnetodiódový jav v kremíku, Slaboproudý obzor 37 (1976) 517.

*   1. Guldan, A.: Mikroelektronické senzory. Bratislava, Alfa 1987.

Červenák, J., Betko, J., Dubecký, F., Měřínsky, K., : Vplyv efektu poľa na elektrické vlastnosti kremíkových magnetidiód, Slaboproudý obzor 36 (1975) 165.

    1. Pfleiderer, H.: Nachrichtentechn. Zeitschrift 30 (1977) 330.