Ing. Dubecký František, CSc.

Šagátová, A., Zaťko, B., Nečas, V., Dubecký, F., Tu, L.A., Sedlačková, K., Boháček, P., and Zápražný, Z.: From single GaAs detector to sensor for radiation imaging camera, Applied Surface Sci 461 (2018) 3-9.

1. Xu, L.: Materials 12 (2019) 1192.
2. Turkington, G.: J. Instrument. 14 (2019) P10018.
#     3. Xu, J.: Rengong Jingti Xuebao/J. Synthetic Crystals 48 (2019) 975.
4. Chen, J.: Precision Engn.-J. Inter. Soc for Precision Engn. Nanotechnol. 62 (2020) 71.

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Zápražný, Z., Sedlačková, K., Sekáčová, M., Dubecký, F., Skuratov, V.A., Korytár, D., and Nečas, V.: Schottky barrier detectors based on high quality 4H-SIC semiconductor: electrical and detection properties, Applied Surface Sci 461 (2018) 276-280.

1. Zhou, Y.: Carbon 148 (2019) 387.
2. Dong, P.: IEEE Access 7 (2019) 170385.
3. Sarac, Y.: J. Alloys Comp. 824 (2020) 153899.

Dubecký, F., Kindl, D., Hubík, P., Mičušík, M., Dubecký, M., Boháček, P., Vanko, G., Gombia, E., Nečas, V., and Mudroň, J.: A comparative study of Mg and Pt contacts on semi-insulating GaAs: electrical and XPS characterization, Applied Surface Sci 395 (2017) 131-135.

1. Xiong, T.: Applied Surface Sci A427 (2018) 1107.
2. Zhou, Y.: Metals 9 (2019) 311.
3. Niu, Q.: Dalton Trans. 49 (2020) 11120.
4. Zhou, L.: J. Water Process Engn. 36 (2020) 101168.
5. Bendahmane, B.: Sensors 20 (2020) 2158.

Šagátová, A., Zaťko, B., Dubecký, F., Ly Anh, T., Nečas, V., Sedlačková, K., Pavlovič, M., and Fulop, M.: Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons, Applied Surface Sci 395 (2017) 66-71.

1. Turkington, G.: Nuclear Instr. Methods in Phys. Res. A 911 (2018) 55.
2. Ni, W.: Radiation Phys. Chem. 152 (2018) 43.
3. Geremew, A.K.: Nanoscale 11 (2019) 8380.
4. Xu, Y.-C.: J. Phys. Chem. Solids 127 (2019) 76.
#     5. Turkington, G.: Proc. IEEE Nuclear Sci Symp. Medical Imag. Conf. NSS/MIC 2018, no. 8824504.
6. Kruchonak, U.: Nuclear Instr. Methods in Phys. Res. A  975 (2020) 164204.
7. Peng, J.: Nuclear Instr. Methods in Phys. Res. A  969 (2020) 164017.
8. Chen, J.: Precision Engn.-J. Inter. Soc for Precision Engn. Nanotechnol. 62 (2020) 71.
9. Shen, Y.: Nanomater. 10 (2020) 340.

Zaťko, B., Šagátová, A., Sedlačková, K., Nečas, V., Dubecký, F., Solard, M., and Granja, C.: Detection of fast neutrons from D-T nuclear reaction using 4H-SiC radiation detector, Inter. J. Modern Phys.: Conf. Ser. 44 (2016) 1660235.

1. Pavlovic, M.: AIP Conf. Proc. 1996 (2018) 020037.

Zaťko, B., Dubecký, F., Šagátová, A., Sedlačková, K., and Ryć, L.: High resolution alpha particle detectors based on 4H-SiC epitaxial layer, J. Instrument. 10 (2015) C04009.

 1. Torrisi, L.: J. Electronic Mater. 46 (2017) 4242.
2. Liu, L.Y.: Diamond Related Mater. 73 (2017) 177.
3. Chernykh, S.V.: Nuclear Instr. Methods in Phys. Res. A 845 (2017) 52.
4. Sciuto, A.: J. Electron. Mater. 46 (2017) 6403.
5. Zhao, S.: Nuclear Instr. Methods in Phys. Res. A 910 (2018) 35.
6. Chernykh, A.V.: Technical Phys. Lett. 44 (2018) 942.
7. Ye, X.: Chinese Phys. B 27 (2018) 087304.
8. Taylor, N.R.: J. Radioanalyt. Nuclear Chem. 320 (2019) 441.
9. Sandupatla, A.: Micromach. 11 (2020) 519.

Zaťko, B., Sedlačková, K., Dubecký,  F., Šagátová, A., Boháček, P., and Nečas, V.: Semiconductor detector based on 4H-SiC and analysis of its active region thickness, J. Instrument. 9 (2014) C05041.

1. Raja, P. V.: J. Instrument. 12 (2017) P08006.

Šagátová, A., Zaťko, B., Pavlovič, M., Sedlačková, K., Hybler, P., Dubecký, F.,  and Nečas, V.: GaAs detectors irradiated by low doses of electrons, J. Instrument. 9 (2014) C04036.

1. Lioliou, G.: J. Applied Phys. 119 (2016) 124507.
2. Lioliou, G.: Nuclear Instr. Methods in Phys. Res. A  813 (2016) 1.
3. Lioliou, G.: Nuclear Instr. Methods in Phys. Res. A  836 (2016) 37.
4. Lioliou, G.: J. Applied Phys. 122 (2017) 244506.
5. Lioliou, G.: X-Ray Spectrometry 47 (2018) 201.
6. Lioliou, G.: J. Geophys. Res.-Space Phys. 123 (2018) 7568.
7. Torrisi, A.: Nuclear Instr. Methods in Phys. Res. A 922 (2019) 250.
8. Lioliou, G.: Nuclear Instr. Methods in Phys. Res. A  946 (2019) 162670.
9. Peng, J.: Nuclear Instr. Methods in Phys. Res. A 969 (2020) 164017.

Dubecký, M., Dubecký, F., : The work functions of Au/Mg decorated Au(100), Mg(001), and AuMg alloy surfaces: a theoretical studies. J. Chem. Phys. 141 (2014) 094705.

       1. Arai, H.: J. Vacuum Sci Technol. B 34 (2016) 040607.
2. Cvetkovic, V.S.: Metals 7 (2017) 95.

Šagátová, A., Zaťko, B., Sedlačková, K., Nečas, V., Dubecký, F., Boháček, P., and Chodák, I.: Semi-insulating GaAs detectors optimized for fast neutron detection, J. Instrument. 8 (2013) C03016.

 1. Chernykh, A.V.: J. Instrument. 10 (2016) C01021.
2. Chernykh, A.V.: J. Instrument. 11 (2016) C12005.
3. Pavlovic, M.: AIP Conf. Proc. 1996 (2018) 020037.
4. Chernykh, S.V.: Instrum. Experiment. Techniq. 62 (2019) 312.

Dubecký, F., Dubecký, M., Hubík, P., Kindl, D., Gombia, E., Baldini, M., and Nečas, V.: Unexpected current lowering by a low work-function metal contact: Mg/SI–GaAs,. Solid-State Electr. 82 (2013) 72-76.

1. Chen, B.: Applied Phys. Lett. 110 (2017) 133504.
2. Chernykh, S.V.: Instrum. Experimen. Techniq. 61 (2018) 665.

Dubecký, F., Gombia, E., Ferrari, C., Zaťko, B., Vanko, G., Baldini, M., Kováč, J., Baček, D., Kováč, P., Hrkút, P., and Nečas, V.: Characterization of epitaxial 4H-SiC for photon detectors. J. Instrument. 7 (2012) P09005.

1. Liu, L.-Y.: Sensors (2017) 2334.

Zaťko, B., Dubecký, F., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Nečas, V., : Detector of fast neutrons based on silicon carbide epitaxial layers. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 151-154.

       1. Liu, L.Y.: Diamond Related Mater. 73 (2017) 177.
#     2. Ouyang, X.: Yuanzineng Kexue Jishu/Atomic Energy Sci Technol. 53 (2019) 1999.

Zaťko, B., Dubecký, F., Boháček, P., Huran, J., Nečas, V., and Ryc, L.: Development and evaluation of semi-insulating GaAs detectors in hot plasmas diagnostics, Nuclear Instr. Methods Phys. Res. A 633 (2011) S131-S133.

1. Chernykh, S.V.: Instrum. Experimen. Techniq. 61 (2018) 665.
2. Gao, R.L.: Sci China-Phys. Mechan. Astron. 62 (2019) 122012.

Zaťko, B., Sedlačková, K., Dubecký, F., Boháček, P., Sekáčová, M., and Nečas, V.: Detection of fast neutrons using detectors based on semi-insulating GaAs. J. Instrument. 6 (2011) C12047.

1. Chernykh, A.V.: J. Instrument. 10 (2016) C01021.
2. Chernykh, A.V.: J. Instrument. 11 (2016) C12005.
3. Hodgson, M.: Measurement Scie Technol. 28 (2017) 105501.
4. Chernykh, S.V.: Instrum. Experimen. Techniq. 62 (2019) 312.
5. Ozden, S.: Inter. J. Surface Sci Engn. 13 (2019) 79.

Dubecký, F., Zaťko, B., Hubík, P., Gombia, E., Boháček, P., Huran, J., : A new kind of quasi-ohmic metallization in semi-insulating GaAs: Study of electrical characteristics. Nuclear Instr. and Methods in Phys. Res. A 607 (2009) 132-134.

  1. Leau W.: Applied Surface Sci 257 (2011) 7286.

Ladzianský, M., Šagátová, A., Nečas, V., Dubecký, F., and Linhart, V.: Deep traps study of radiation-damaged semi-insulating GaAs detectors introduced by neutrons, Nuclear Instr. and Methods in Phys. Res. A 607 (2009) 135-137.

1. Meshkian, M.: Nuclear Instr. and Methods in Phys. Res. A 788 (2015) 73.
2. Lioliou, G.: Nuclear Instr. Methods in Phys. Res. A  813 (2016) 1.
3. Garnica, O.: IEEE Trans. Nuclear Sci 64 (2017) 1095.
4. Lioliou, G.: J. Applied Phys. 122 (2017) 244506.
5. Lioliou, G.: X-Ray Spectrom. 47 (2018) 201.
6. Lioliou, G.: J. Geophys. Res.-Space Phys. 123 (2018) 7568.
7. Lioliou, G.: Nuclear Instr. Methods in Phys. Res. A  946 (2019) 162670.

Zaťko, B., Dubecký, F., Přibil, J., Boháček, P., Frollo, I., Ščepko, P., Mudroň, J., Grybos, P., Nečas, V., : On the development of portable X-ray CT mini-system using semi-insulating GaAs radiation imaging detectors. Nuclear Instrum. Methods in Phys. Res. A 607 (2009) 67-70.

     1. Mouleeswaran, D.: J. Crystal Growth 362 (2013) 238.

Přibil, J., Zaťko, B., Frollo, I., Dubecký, F., Ščepko, P., Mudroň, J., : Quantum imaging X–ray CT systems based on GaAs radiation detectors using perspective imaging reconstruction techniques, Measurement Sci Rev. 9, Sec. 3 (2009) 27-32.

*    1. Avenel-Le Guerroue, M.L.: PhD Thesis. Grenoble: CEA – LETI – Direction de la Recherche Technologique 2012.
2. Wells, K.: Applied Radiat. Isotopes 70 (2012) 1729.
3. Jin, G.: Measurement Sci Rev. 12 (2012) 296.
4. D’Aillon, E.G.: Nuclear Instrum. Methods in Phys. Res. A 727 (2013) 126.

Šagátová-Perďochová, A., Dubecký, F., Zaťko, B., Chodák, I., Ladzianský, M., and Nečas, V.: Detectors of fast netrons based on semi-insulating GaAs with neutron converter layers, Nuclear Instr. and Methods in Phys. Res. A 576 (2007) 56-69.

1. Guo, J.M.: Nuclear Instr. and Methods in Phys. Res. A 605 (2009) 69.
2. Dizaji, H.: Chinese Phys. Lett. 31 (2014) 012901.
3. Chernykh, A.V.: J. Instrument. 10 (2015) C01021.
4. Kasani, H.: J. Electron. Mater. 46 (2017) 2548.
5. Chernykh, S.V.: Instrum. Experimen. Techniq. 62 (2019) 312.

Dubecký, F., Ferrari, C., Korytár, D., Gombia, E., Nečas, V., : Performance of semi-insulating GaAs-based radiation detectors: Role of key physical parameters of base mnaterials. Nuclear Instr. and Methods in Phys. Res. A 576 (2007) 27-31. (VEGA 2/7170/27).

      1. Celik, A.: X-Ray Spectrometry 37 (2008) 490.
*    2. Akimov, J.K.: Poluprovodnikovyje detektory jadernych izlučenij. Dubna: 2009. 277 s. ISBN 978-5-9530-0213-4.
*    3. Avenel-Le Guerroue, M.L.: PhD Thesis. Grenoble: CEA – LETI – Direction de la Recherche Technologique 2012.
4. Manifacier, J.C.: Solid-State Electr. 80 (2013) 45.
5. Mouleeswaran, D.: J. Crystal Growth 362 (2013) 238.
6. D’Aillon, E.G.: Nuclear Instrum. Methods in Phys. Res. A 727 (2013) 126.

Zaťko, B., Dubecký, F., Procházková, O., and Nečas, V.: Role of electrode metalllization in the performance of bulk semi-insulating InP radiation detectors, Nuclear Instr. and Methods in Phys. Res. A 576 (2007) 98-102.

*  1. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.
2. Bilgili, A.K.: J. Applied Phys. 125 (2019) 035704.

Zaťko, B., Dubecký, F., : Performance of a Schottky surface barrier radiation detector based on bulk undoped semi-insulating GaAs at reduced temperature. IEEE Trans. Nuclear Sci 53 (2006) 625-629.

      1. Sagatova-Perd’ochova, A.: Nuclear Instr. Methods Phys. Res. A 591 (2008) 98.

Dubecký, F., Hulicius, E., Frigeri, P., Šagátová-Perďochová, A., Zaťko, B., Hubík, P., Gombia, E., Boháček, P., Pangrác, J., Franchi, S., Nečas, V., : Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode. Nuclear Instr. and Methods in Phys. Res. A 563 (2006) 159-162.

      1. Manifacier, J.C.: Solid-State Electr. 54 (2010) 1511.
*    2. Avenel-Le Guerroue, M.L.: PhD Thesis. Grenoble: CEA – LETI – Direction de la Recherche Technologique 2012.

Dubecký, F., Šagátová-Perďochová, A., Ščepko, P., Zaťko, B., Sekerka, V., Nečas, V., Sekáčová, M., Hudec, M., Boháček, P., and Huran, J.: Digital X-ray portable scanner based on monolithic semi-insulating GaAs detectors: General description and first “quantum” images, Nuclear Instr. and Methods in Phys. Res. A 546 (2005) 118-124.

1. Iacobaeus, C.: IEEE Trans. Nuclear Sci 53 (2006) 554.
2. Zentai, G.: Proc. 2007 IEEE Inter. Workshop on Imaging Systems Techniques art. no. 4258788.
3. Jackson, J.B.: Measurement Sci Technol. 20 (2009) 075502.
*     4. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.
#     5. Prokopyev, D.G.: Proc. IFOST 2012 (2012) art. no. 6357750.
6. Veale, M. C.: Nuclear Instrum. Methods in Phys. Res. A 752 (2014) 6.
7. Turkington, G.: Nuclear Instr. Methods in Phys. Res. A 911 (2018) 55.

Zaťko, B., Dubecký, F., Ščepko, P., Melov, V., Herms, M., Haupt, L., : Performance study of monolithic line radiation detector based on semi-insulating GaAs using X-ray source. Nuclear Instr. and Methods in Phys. Res. A 551 (2005) 78-82.

      1. Paszkowicz, W.: Nuclear Instr. Methods Phys. Res. A 551 (2005) 162.
2. Sagatova-Perd’ochova, A.: Nuclear Instr. Methods Phys. Res. A 591 (2008) 98.
*     3. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.

Dubecký, F., Ščepko, P., Loukas, D., Zaťko, B., Sekerka, V., Nečas, V., Šagátová-Perďochová, A., Sekáčová, M., Boháček, P., Hudec, M., Huran, J., : Application of monolithic strip line radiation detector based on semi-insulating GaAs in X-ray portable scanner. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 314-320.

      1. Pino, R.: J. Crystal Growth 290 (2006) 29.
2. Zwerger, A.: Nuclear Instr. Methods A 576 (2007) 23.
*     3. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.

Šagátová-Perďochová, A., Nečas, V., Ly Anh, T., Dubecký, F., Boháček, P., Sekáčová, M., Pavlicová, V., :Influence of top contact topology on detection properties of semi-insulating GaAs detectors. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 103-110.

*     1. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.

Kaminskii, V., Pawlowski, M., Kozlowski, R., Surma, B., Dubecký, F., Yamada, M., Fukuzawa, M., :Investigation of compensation defect centres in semi-insulating InP crystals. Eur. Phys. J. Appl. Phys. 27 (2004) 171-175.

      1. Tan, X.M.: Zeitschrift Naturforschung A 61 (2006) 371.
2. Dogan, S.: J. Luminescence 128 (2008) 232.

Huran, J., Hotový, I., Dubecký, F., Balalykin, N., : N-doped a-SiC:H films deposited by PECVD annealed by pulse electron beam. In: SIMC-XIII-2004. Ed. Wang, Z. et al. Piscataway: IEEE, 2004. P. 93-97.

     1. Hong, R.D.: Spectroscopy Lett. 43 (2010) 298.

Dubecký, F., Boháček, P., Zaťko, B., Sekáčová, M., Huran, J., Šmatko, V., Fornari, R., Gombia, E., Mosca, R., Pelfer, P., : Role of electrode technology in radiation detector based on semi-insulating InP in development of detector array. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 181-191.

     1. Zavadil, J.: J Optoelectr. Advanced Mater. 9 (2007) 1221.
2. Kim, H.: J. Electrochem. Sci Technol. 9 (2018) 78.

Boháček, P., Korytár, D., Ferrari, C., Dubecký, F., Surma, B., Zaťko, B., Šmatko, V., Huran, J., Fornari, R., Sekáčová, M., Strzelecka, S., : Correlation of crystal defects and galvanomagnetic parameters of semi-insulating InP with performance of radiation detectors fabricated from characterised materials. Materials Sci Engn. B 91-92 (2002) 516-520.

*    1. Pelfer, P.G: SIMC-XII-2002. Piscataway: IEEE 2002. P. 273.
2. Gorodynskyy, V.: Nuclear Instr. Methods A 555 (2005) 288.
*    3. Perďochová, A.: PhD. Thesis. Bratislava: FEI STU 2005.
4. Zdansky, K.: IEEE Trans. Nuclear Sci 56 (2009) 2997.

Morvic, M., Boháček, P., Betko, J., Dubecký, F., Huran, J., Sekáčová, M., : Electrical properties of semi-insulating GaAs irradiated with neutrons. Nuclear Instr. Methods in Phys. Res. B 197 (2002) 240-246.

1. Ladziansky, M.: In: ASDAM 2008. Piscataway: IEEE 2008. P. 179.
2. Sagatova-Perd’ochova, A.: Nuclear Instr. Methods Phys. Res. A 591 (2008) 98.
3. Bialous, M.: Applied Physics B 96 (2009) 471.
*     4. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.
5. Sedlackova, K.: Nuclear Instrum. Methods Phys. Res. A 709 (2013) 63.
6. Aldemir, D.A.: Silicon 11 (2019) 2647.

Caria, M., Barberini, L., Cadeddu, S., Giannattasio, A., Rusani, A., Sesselego, A., Lai, A., D’Auria, S., and Dubecký, F.Gallium arsenide photodetectors for imaging in the far ultraviolet region. Applied Phys. Lett. 81 (2002) 1506-1508.

1. Monroy, E.: Semicond. Sci Techn. 18 (2003) R33-R51.
2. Blank, T.V.: Semiconductors 37 (2003) 999.
3. Nayak, J.: Physica E 24 (2004) 227.
4. Khudaverdyan, S.K.: Solid-State Electron. 49 (2005) 634.
5. Khudaverdyan, S.: J. Physics D 38 (2005) 272.
6. Devika, M.: J. Electrochem. Soc. 154 (2007) H67.
7. Khudaverdyan, S.: J. Physics D 40 (2007) 7669.
8. Mokeev, D.: SIBCON-2009: Inter. Siberian Conf. Control and Comm. IEEE (2009) P. 162.
9. Chamekh, M.: European Phys. J. – Applied Phys. 52 (2010) 20502.
#    10. Legky, V.N.: Applied Phys. 2 (2011) 112.
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12. Kumar, B.: Mater. Research Bull. 89 (2017) 108.
13. Oh, S.: ECS J. Solid State Sci Technol. 6 (2017) Q79.
14. Yuvaraja, S.: J. Mater. Sci-Mater. Electr. 30 (2019) 7618.

Dubecký, F., Zaťko, B., Nečas, V., Sekáčová, M., Fornari, R., Gombia, E., Boháček, P., Krempasky, M., and Pelfer, P.: Recent improvements in detection performances of radiation detectors based on bulk semi-insulating InP, Nuclear Instrum. Methods in Phys. Research A 487 (2002) 27-32.

1. Gorodynskyy, V.: Nuclear Instr. Methods A 555 (2005) 288.
#     2.   Procházková, O.: J. Crystal Growth 275 (2005)  e959.
3. Pino, R.: J. Crystal Growth 290 (2006) 29.
4. Celik, A.: X-Ray Spectrometry 37 (2008) 490.
5. Yatskiv, R.: Nuclear Instr. Methods A 598 (2009) 759.
6. Zdansky, K.: IEEE Trans. Nuclear Sci 56 (2009) 2997.
7. Owens, A.: Compound Semicond. Radiation Detectors. CRC Press-Taylor 2012 ISBN:978-1-4398-7313-7. P. 287-368.
8. Mouleeswaran, D.: J. Crystal Growth 362 (2013) 238.
9. Lioliou, G.: J. Applied Phys. 124 (2018) 195704.

Owens, A., Peacock, A., Bavdaz, M., Brammertz, G., Dubecký, F., Gostilo, V., Gryaznov, D., Haack, N., Krumrey, M., and Loupilov, A.: The X-ray response of InP: Part B, synchrotron radiation measurements, Nuclear Instr. Methods in Phys. A 491 (2002) 444-451.

#     1. Wenzel, K.-P.: European Space Agency, Spec. Publ. ESA SP 1268 (2003) 1.
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3. Yatskiv, R.: Nuclear Instr. Methods A 598 (2009) 759.
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5. Yatskiv, R.: J. Instrum. 7 (2012) C10005.
6. Butera, S.: Sci Rep.7 (2017) 10206.
7. Butera, S.: Nuclear Instr. Methods in Phys. Res. A 908 (2018) 277.

Nečas, V., Ly Anh, T., Sekáčová, M., Darmo, J., Dubecký, F., Šagátová-Perďochová, A., : Investigation of performance of semi-insulating GaAs detectors irradiated by high γ doses. Nuclear Instr. Methods in Phys. A 458 (2001) 348-351.

*     1. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.
2. Khamari, S.: Nuclear Instr. and Methods in Phys. Res. B 269 (2011) 272.
3. Abhirami, K.M.: Radiation Phys. Chem. 91 (2013) 35.
4. Kumari, M.: Nuclear Instrum. Methods in Phys. Res. A 753 (2014) 116.
5. Rana, P.: Nuclear Instr. and Methods in Phys. Res. B 349 (2015) 50.
6. Sadhasivam, S.: Mater. Res. Bull. 74 (2016) 117.
7. Chauhan, R. P.: Nuclear Instr. Methods in Phys. Res. B  379 (2016) 78.
8. Garnica, O.: IEEE Trans. Nuclear Sci 64 (2017) 1095.
9. Peng, J.: Nuclear Instrum. Methods in Phys. Res. A 969 (2020) 164017.
10. Oufi, A.M.: Radiation Phys. Chem. 170 (2020) 108494.

Dubecký, F., Darmo, J., Krempasky, M., Sekáčová, M., Zaťko, B., Nečas, V., Pelfer, P., Senderák, R., Somora, M., Haralabidis, N., Loukas, D., Misiakos, K., Hlaváč, S., Kolesár, F., Boháček, P., Ruček, M., : On technology and performance of SAMO:: X- and γ-ray 32-pixel line detector based on semi-insulating GaAs and InP. Nuclear Instr. & Methods in Phys. Res. A 458 (2001) 152-157.

      1. Šatka, D.: Materials Sci & Engn. B 91-92 (2002) 239.
*    2. Perďochová, A.: PhD. Thesis. Bratislava: FEI STU 2005.

Pelfer, P., Dubecký, F., Fornari, R., Pikna, M., Gombia, E., Darmo, J., Krempasky, M., Sekáčová, M., : Present status and perspectives of the radiation detectors based on InP materials. Nuclear Instr. Methods in Phys. A 458 (2001) 400-405.

*   1. Owens, A.: ESLAB Report No. 2001/018, p. 1-9.
*   2. Owens, A.: ESLAB Report No. 2002/052/ST, p. 1-12.
3. Owens, A.: Nuclear Instr. & Methods A 487 (2002) 435.
4. Mikulec, B.: Nuclear Instr. & Methods A 510 (2003) 1.
5. Sellin, P.J.: Nuclear Instr. & Methods A 513 (2003) 332.
*   6.  Owens, A.: Proc. SPIE 4851 (2003) 1059.
7. Zavadil, J.: In: ASDAM 2004. Piscataway: IEEE 2004. P. 247.
8. Laird, J.S.: Nuclear Instr. Methods A 541 (2005) 228.
9. Gorodynskyy, V.: Nuclear Instr. Methods A 555 (2005) 288.
10. Zdansky, K.: IEEE Trans. Nuclear Sci 53 (2006) 3956.
11. Prochazkova, O.: J. Material. Sci-Mater. Electr. 19 (2008) 770.
12. Gorodynskyy, V.: IEEE Trans. Nuclear Sci 55 (2008) 2785.
13. Yatskiv, R.: Nuclear Instr. Methods A 598 (2009) 759.
14. Zdansky, K.: IEEE Trans. Nuclear Sci 56 (2009) 2997.
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