Ing. Gucmann Filip, PhD.

Stoklas, R., Hasenőhrl, S., Dobročka, E., Gucmann, F., and Kuzmík, J.:  Electron transport properties in thin InN layers grown on InAlN, Mater. Sci  Semicond. Process. 155 (2023) 107250.

1. He, Z.: Vacuum 220 (2024) 112833.

Hrubišák, F., Hušeková, K., Zheng, X., Rosová, A., Dobročka, E., Ťapajna, M., Mičušík, M., Nádaždy, P., Egyenes, F., Keshtkar, J., Kováčová, E., Pomeroy, J.W., Kuball, M., and Gucmann, F.: Heteroepitaxial growth of Ga₂O₃ on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga₂O₃ power devices, J. Vacuum Sci Technol. A 41 (2023) 042708.

1. Woo, K.: J. Phys.-Mater. 7 (2024) 022003.
2. Vo, T.H.: Mater. Sci Semicond. Process. 173 (2024) 108130.
3. Akyol, F.: Mater. Sci Semicond. Process. 170 (2024) 107968.

Šimkovic, I., Gucmann, F., Hricovíni, M., Mendichi, R., Schieroni, A.G., Piovani, D., Zappia, S., Dobročka, E., Filip, J., and Hricovíni, M.: Properties of quaternized and crosslinked carboxymethylcellulose films, Cellulose 30 (2023) 2023-2036.

1. Shan, T.S.: Chem. Eng. J. 478 (2023) 147509.

Gucmann, F., Nádaždy, P., Hušeková, K., Dobročka, E., Priesol, J., Egyenes, F., Šatka, A., Rosová, A., and Ťapajna, M.: Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD, Mater. Sci Semicond. Process. 156 (2023) 107289.

1. Jewel, M.U.: Physica Status Solidi A 220 (2023) 2300036.
2. He, H.: Electronics 12 (2023) 4315.
3. Zhang, Y.F.: Nanotechnol. 35 (2024) 165502.
4. Vo, T.H.: Mater. Sci Semicond. Process. 173 (2024) 108130.

Dobročka, E., Gucmann, F., Hušeková, K., Nádaždy, P., Hrubišák, F., Egyenes, F., Rosová, A., Mikolášek, M., and Ťapajna, M.: Structure and thermal stability of ε/κ-Ga₂O₃ films deposited by liquid-injection MOCVD, Materials 16 (2023) 20.

1. Girolami, M.: J. Mater. Chem. C 11 (2023) 3759.

Kozak, A., Sojková, M., Gucmann, F., Bodík, M., Vegso, K., Dobročka, E., Píš, I., Bondino, F., Hulman, M., Šiffalovič, P., and Ťapajna, M.: Effect of the crystallographic c-axis orientation on the tribological properties of the few-layer PtSe₂, Applied Surface Sci 605 (2022) 154883.

1. Zeng, S.Y.: Adv. Function. Mater. 34 (2024) Iss. 6.

Mošková, A., Moško, M., Precner, M., Mikolášek, M., Rosová, A., Mičušík, M.,  Štrbík, V., Šoltýs, J., Gucmann, F., Dobročka, E., and Fröhlich, K.: Doping efficiency and electron transport in Al-doped ZnO films grown by atomic layer deposition, J. Applied Phys. 130 (2021) 035106.

1. Zhao, K.: Nanomater. 12 (2022) 172.
2. Goikhman, B.V.: J. Mater. Chem. A 10 (2022) 8413.
3. Singh, R.: J. Mater Sci-Mater. Electron. 33 (2022) 6969.
4. Fedorov, F.S.: Applied Surface Sci 606 (2022) 154717.

Šimkovic, I., Gucmann, F., Mendichi, R., Schieroni, A.G., Piovani, D., Dobročka, E., and Hricovíni, M.: Extraction and characterization of polysaccharide films prepared from Furcellaria lumbricalis and Gigartina skottsbergii seaweeds, Cellulose 28 (2021) 9567–9588.

1. Joshi, J.: Polymers 14 (2022) 1267.
2. Kulikova, Y.: Applied Sci-Basel 12 (2022) 3599.
3. Liu, J.: ACS Applied Polymer Mater. 4 (2022) 5608-.
4. Kruk, J.: Food Hydrocolloids 135 (2023) 108214.
5. Alvarez-Vinas, M.: Marine Drugs 21 (2023) 83.
6. Wang, H.T.: Foods 12 (2023) 1622.
7. Sonchaeng, U.: Polymers 15 (2023) 3342.

Gucmann, F., Pomeroy, J.W., and Kuball, M.: Scanning thermal microscopy for accurate nanoscale device thermography, Nano Today 39 (2021) 101206.

1. Fujii, S.: J. Amer. Chem. Soc 143 (2021) 18777.
2. Li, Y.F.: J. Thermal Sci 31 (2022) SI976.
3. Sun, L.: Rev. Sci Instrum. 93 (2022) 114902.
4. Nam, K.: Nanotechnol. 34 (2023) 105202.
5. Ohayon-Lavi, A.: Applied Thermal Engn. 229 (2023) 120562.
6. Liu, Z.M.: Optics Express 31 (2023) 19453.
7. Moradi, A.: Small 19 (2023) Iss. 52.
8. Zhang, Q.Q.: Small 19 (2023) Iss. 32.
9. Alikin, D.: Small Methods 7 (2023) Iss. 4.

Chauhan, P., Hasenöhrl, S., Vančo, Ľ., Šiffalovič, P., Dobročka, E., Machajdík, D., Rosová, A., Gucmann, F., Kováč, J.jr., Maťko, I., Kuball, M., and Kuzmík, J.: A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: A complete depth-resolved investigation, CrystEngComm 22 (2020) 130-141.

1. Chen, W.C.: Surface Topography-Metrol. Propert. 11 (2023) 024002.

Egyenes-Pörsök, F., Gucmann, F., Hušeková, K., Dobročka, E., Sobota, M., Mikolášek, M., Fröhlich, K., and Ťapajna, M.: Growth of α- and β-Ga₂O₃ epitaxial layers on sapphire substrates using liquid-injection MOCVD, Semicond. Sci Technol. 35 (2020) 115002.

1. Tak, B.R.: J. Phys. D 54 (2021) 453002.
2. Zhou, J.G.: J. Mater. Res. 36 (2021) 4832.
3. Yang, D.: Electron. Mater. Lett. 18 (2022) 113.
4. Biswas, M.: APL Mater. 10 (2022) 060701.
5. Liu, Z.: J. Phys. D 56 (2023) 093002.
6. Jewel, M.U.: Physica Status Solidi A 220 (2023) 2300036.

Šichman, P., Hasenöhrl, S., Stoklas, R., Priesol, J., Dobročka, E., Haščík, Š., Gucmann, F., Vincze, A., Chvála, A., Marek, J., Šatka, A., and Kuzmík, J.: Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure, Mater. Sci Semicond. Process. 118 (2020) 105203.

1. Mochizuki, K.: Japan. J. Applied Phys. 60 (2021) 018002.
2. Pan, Y.: Inter. J. Energy Res. 45 (2021) 15512.
3. Qin, Y.: J. Phys. D 56 (2023) 093001.

Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., and Kuzmík, J.: Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs, Applied Surface Sci 528 (2020) 146824.

1. Tian, Y.: Inter. J. Electrochem. Sci 15 (2020) 12682.

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, Mater. Sci in Semicond Process.  91 (2019) 356-361.

1. Nguyen, D.D.: J. Applied Phys. 127 (2020) 094501.
2. Kim, H.: IEEE Access 10 (2022) 68724.
3. Hsieh, H.J.: Mater. Sci Semicond. Process. 169 (2024) 107908.

Kuball, M., Pomeroy, J. W., Gucmann, F., and Oner, B.: Thermal analysis of semiconductor devices and materials – Why should I not trust a thermal simulation?. In  IEEE BiCMOS and Compound Semicond. Integrated Circuits Technol. Symp. (BCICTS). Nashville 2019, pp. 1-5. (Not IEE SAS)

1. El Helou, A.: IEEE Trans. Electron Dev. 67 (2020) 5415.
2. El-Helou, A.: Semicond. Sci Technol. 36 (2021) 014008.
3. Jangra, P.: ECS J. Solid State Sci Technol. 12 (2023) 051001.

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, Mater. Sci in Semicond Process.  91 (2019) 356-361.

1. Duong, D.N.: J. Applied Phys. 127 (2020) 094501.

Liang, J., Zhou, Y., Masuya, S., Gucmann, F., Singh, M., Pomeroy, J., Kim, S., Kuball, M., Kasu, M., and Shigekawa, N.: Annealing effect of surface-activated bonded diamond/Si interface, Diamond Related Mater. 93 (2019) 187-192. (Not IEE SAS)

 1. Matsumae, T. Proc. 2019 6^th Inter. Workshop on Low Temp. Bonding for 3d Integration (LTB-3D), p. 70.
2. Matsumae, T.: Electron. Compon. Technol. Conf. 2020‏, pp. 1436-1441.
3. Liu, H.: Tribol. Inter. 148 (2020) 106298.
4. Matsumae, T.: Mater. Sci. Forum 1004 MSF (2020) 206.
5. Liu, H.: Comput. Mater. Sci 186 (2021) 110069.
6. Matsumae, T.: Scripta Mater. 191 (2021) 52.
7. Yang, S.: Mater. Res. Express 8 (2021) 085901.
8. Fukumoto, S.: Inter. Conf. Electron. Packaging – ICEP 2021, 9451935, p. 41.
9. Yuan, Z.H.:Proc. ASME – INTERPACK 2021. Art. No. V001T01A002.
10. Yang, S.: Materials 15 (2022) 3115.
11. Wang, H.C.: Diamond Related Mater. 127 (2022) 109213.
12. Wang, F.: Diamond Related Mater. 135 (2023) 109844.
13. Qu, Y.F.: Surface Topography-Metrol. Propert. 11 (2023) 025013.
14. Miyatake, T.: Japan. J. Applied Phys. 62 (2023) 096503.
15. Qu, Y.F.: Results in Phys. 52 (2023) 106827.

Liang, J.B., Zhou, Y., Masuya, S., Gucmann, F., Singh, M.,  Pomeroy, J., Kim, S.,  Kuball, M., Kasu, M., and Shigekawa, N.: Effect of annealing temperature on diamond/Si interfacial structure. In: Proc. 2019 6^th Inter. Workshop on Low Temp. Bonding for 3d Integration (LTB-3D), p. 3. (Not IEE SAS)

1. Li, M.: Forensic Sci Inter.-Genetics 44 (2020) 102169.
2. Ilyas, T.: Electronics 9 (2020) 383.
3. Pan, L.: IEEE Conf. Computer Vision Pattern Recog. (2020)‏ 1669.
4. Naveed, S.: Environment. Pollution 261 (2020) 114233.
5. French, M.A.: J. Infect. Diseases 221 (2020) 1232.
6. Naveed, S.: Ecotoxicol. Environment. Safety 206 (2020) 111200.
7. Zhang, P.: Electrochim. Acta 363 (2020) 137220.
8. Yang, J.: Environment. Res. 189 (2020) 109950.
9. Lin, J.-R.: Automat. Construct. 115 (2020) 103212.
10. Guo, J.F.: IEEE/CVF Conf. On Comp. Vision Pattern Recog., CVPR 2021, p. 14693.

Chauhan, P., Hasenöhrl, S., Dobročka, E., Chauvat, M.-P., Minj, A., Gucmann, F., Vančo, Ľ., Kováč, J.jr., Kret, S., Ruterana, P., Kuball, M., Šiffalovič, P., and Kuzmík, J.: Evidence of relationship between strain and In-incorporation: growth of N-polar In-rich InAlN buffer layer by OMCVD, J. Applied Phys. 125 (2019) 105304.

1. Biswas, D.: J. Applied Phys. 125 (2019) 225707.
2. Toprak, A.: Mater. Res. Express 8 (2021) 126302.
#     3. Wang, X.: Zhenkong Kexue yu Jishu Xuebao/J. Vacuum Sci Technol. 42 (2022) 151.

Gucmann, F., Ťapajna, M., Pohorelec, O., Haščík, Š., Hušeková, K., and Kuzmík, J.: Creation of two-dimesional electron gas and role of surface donors in III-N metal-oxide-semiconductor high-electron mobility transistors, Phys. Status Solidi A  215 (2018) 1800090.

1. Song, K.: J. Phys. D 53 (2020) 345107.
2. Shi, Y.: IEEE Trans. Electron Dev. 67 (2020) 2290.
3. Duong D.N.: J. Applied Phys. 127 (2020) 094501.
4. Kaushik, P.K.: Nanoscale Res. Lett. 16 (2021) 159.

Kúdela, R., Šoltýs, J., Kučera, M., Stoklas, R., Gucmann, F., Blaho, J., Mičušík, M., Pohorelec, O., Gregor, M., Brytavskyi, I.V., Dobročka, E., and Gregušová, D.: Technology and application of in-situ AlO_x layers on III-V semiconductors, Applied Surface Sci 461 (2018) 33-38.

1. Sa, Z.X.: Adv. Functional Mater. 33 (2023) Iss. 38.

Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Toth, L., Pecz, B., Micusik, M., Brunner, F., and Kuzmík, J.: Investigation of ‘surface donors’ in Al₂O₃/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties, Applied Surface Sci 426 (2017) 656-661.

1. Huang, H.: J. Phys. D 51(2018) 345102.
2. Jo, Y.J.: Electron. Mater. Lett. 15 (2019) 179.
3. Shi, Y.: IEEE Trans. Electron Dev. 66 (2019) 4164.
4. He, F.: Chinese J. Catal. 41 (2020) SI9.
5. Shi, Y.: IEEE Trans. Electron Dev. 67 (2019) 2290.
6. Asubar, J.T.: IEEE Electron Dev. Lett. 41 (2020) ‏ 693.
7. Cai, Y.: Japan. J. Applied Phys. 59 (2020) 041001.
8. Low, R.S.: Applied Phys. Express 14 (2021) 031004.
9. Dashtian, K.: Coord. Chem. Rev. 445 (2021) 214097.
10. Vauche, L.: ACS Applied Electron. Mater. 3 (2021) 1170.
11. Kaushik, P.K.: Nanoscale Res. Lett. 16 (2021)159.
12. Kaplar, R.: Ultrawide Bandgap Semicond. 107 (2021) 191.
13. Ahbab, S.S.: Proc. IEEE Inter. Women in Engn. (WIE) Conf. Electr. Computer Engn., WIECON-ECE 2021. IEEE 2022, p. 59.
14. Gong, J.R.: Japan. J. Applied Phys. 61 (2022) 011003.
15. Lin, Y.S.: Sci Adv. Mater. 4 (2022) 1419.
16. Nautiyal, P.: Microelectron. Reliab. 139 (2022) 114800.
17. Brivio, F.: Applied Phys. Lett. 123 (2023) 022104.
18. Gong, J.R.: J. Applied Phys. 135 (2024) 115303.

Gucmann, F., Kúdela, R., Rosová, A., Dobročka, E., Mičušík, M., and Gregušová, D.: Optimization of UV-assisted wet oxidation of GaAs, J. Vacuum Sci Technol. B 35 (2017) 01A116.

1. Toyoshima, R.: Chem. Comm. 56 (2020) 14905.
2. Wang, J.J.: Mater. Sci Semicond. Process. 159 (2023) 107372.

Ťapajna, M., Válik, L., Gucmann, F., Gregušová, D., Fröhlich, K., Haščík, Š., Dobročka, E., Tóth, L., Pécz, B., and Kuzmík, J.: Low-temperature atomic layer deposition-grown Al₂O₃ gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density, J. Vacuum Sci Technol. B 35 (2017) 01A107.

1. Meer, M.: Semicond. Sci Technol. 32 (2017) 04LT02.
2. Duan, T. L.: Nanoscale Res. Lett. 12 (2017) 499.
3. Gao, J.: Physica Status Solidi A 215 (2018) 1700498.
4. Le, S.P.: J. Applied Phys. 123(2018) 034504.
5. Takhar, K.: Applied Surface Sci 481 (2019) 219.
6. Nguyen, D.D.: J. Applied Phys. 127 (2020) 094501.
7. Schiliro, E.: AIP Adv. 10 (2020) 125017.
8. Nguyen, D.D.: J. Applied Phys. 130 (2021) 014503.
9. Bhardwaj, N.: Applied Surface Sci 572 (2022) 151332.
10. Fiorenza, P.: Applied Surface Sci 579 (2022) 152136.
11. Schiliro, E.: ACS Applied Electr. Mater. 4 (2022) 406.
12. Lo Nigro, R.: Materials 15 (2022) 830.
13. Calzolaro, A.: Materials 15 (2022) 791.
14. Meer, M.: Semicond. Sci Technol. 37 (2022) 085007.
15. Paul, P.: ACS Applied Mater. Interfaces 15 (2023) 22626.
16. Chang, C.Y.: Chem. Mater. 35 (2023) 7430.

Gregušová, D., Gucmann, F., Kúdela, R., Mičušík, M., Stoklas, R., Válik, L., Greguš, J., Blaho, M., Kordoš, P., :Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment,. Applied Surface Sci 395 (2017) 140-144.

Gucmann, F., Gregušová, D., Válik, L., Ťapajna, M., Haščík, Š., Hušeková, K., Fröhlich, K., Pohorelec, O., and Kuzmík, J.: DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT with Al₂O₃ gate dielectric prepared by various techniques. In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 9-12.

1. Hasan, Md. R.: J. Vacuum Sci Technol. B 35 (2017) 052202.
2. Pan, T.: Materiali in Tehnologije 52 (2018) 795.

Gucmann, F., Kúdela, R., Kordoš, P., Dobročka, E., Gaži, Š., Dérer, J., Liday, J., Vogrinčič, P., and Gregušová, D.: III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O₂ plasma-oxidized GaAs cap, J. Vacuum Sci Technol. B 33 (2015) 01A111.

1. Grabnic, T.: Surface Sci 692 (2020) 121516.

Gucmann, F., Gregušová, D., Stoklas, R., Dérer, J., Kúdela, R., Fröhlich, K., and Kordoš, P.: InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator, Applied Phys. Lett. 105 (2014) 183504.

Fröhlich, K., Mičušík, M., Dobročka, E., Šiffalovič, P., Gucmann, F., and Fedor, J.: Properties of Al₂O₃ thin films grown by atomic layer deposition. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 171-174.

1. Naumann, F.: J. Vacuum Sci Technol. B 38 (2020) 014014.
2. Kim, Y.: ACS Applied Mater. Interfac. 12 (2020) 44912.
3. Burwell, G.: Adv. Engn. Mater. 25 (2023) Iss. 12.

Válik, L., Ťapajna, M., Gucmann, F., Fedor, J., Šiffalovič, P., Fröhlich, K., : Distribution of fixed charge in MOS structures with ALD grown Al2O3 studied by capacitance measurements. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 227-230.