Ing. Gucmann Filip, PhD.

Egyenes-Pörsök, F., Gucmann, F., Hušeková, K., Dobročka, E., Sobota, M., Mikolášek, M., Fröhlich, K., and Ťapajna, M.: Growth of α- and β-Ga2O3 epitaxial layers on sapphire substrates using liquid-injection MOCVD, Semicond. Sci Technol. 35 (2020) 115002.

1. Tak, B.R.: J. Phys. D 54 (2021) 453002.

Šichman, P., Hasenöhrl, S., Stoklas, R., Priesol, J., Dobročka, E., Haščík, Š., Gucmann, F., Vincze, A., Chvála, A., Marek, J., Šatka, A., and Kuzmík, J.: Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure, Mater. Sci Semicond. Process. 118 (2020) 105203.

1. Mochizuki, K.: Japan. J. Applied Phys. 60 (2021) 018002.
2. Pan, Y.: Inter. J. Energy Res. 45 (2021) 15512.

Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., and Kuzmík, J.: Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs, Applied Surface Sci 528 (2020) 146824.

1. Tian, Y.: Inter. J. Electrochem. Sci 15 (2020) 12682.

Kuball, M., Pomeroy, J. W., Gucmann, F., and Oner, B.: Thermal analysis of semiconductor devices and materials – Why should I not trust a thermal simulation?. In  IEEE BiCMOS and Compound Semicond. Integrated Circuits Technol. Symp. (BCICTS). Nashville 2019, pp. 1-5. (Not IEE SAS)

1. El Helou, A.: IEEE Trans. Electron Dev. 67 (2020) 5415.
2. El-Helou, A.: Semicond. Sci Technol. 36 (2021) 014008.

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, Mater. Sci in Semicond Process.  91 (2019) 356-361.

1. Duong, D.N.: J. Applied Phys. 127 (2020) 094501.

Liang, J., Zhou, Y., Masuya, S., Gucmann, F., Singh, M., Pomeroy, J., Kim, S., Kuball, M., Kasu, M., and Shigekawa, N.: Annealing effect of surface-activated bonded diamond/Si interface, Diamond Related Mater. 93 (2019) 187-192. (Not IEE SAS)

 1. Matsumae, T. Proc. 2019 6th Inter. Workshop on Low Temp. Bonding for 3d Integration (LTB-3D), p. 70.
2. Matsumae, T.: Electron. Compon. Technol. Conf. 2020‏, pp. 1436-1441.
3. Liu, H.: Tribol. Inter. 148 (2020) 106298.
#   4. Matsumae, T.: Mater. Sci. Forum 1004 MSF (2020) 206.
5. Liu, H.: Comput. Mater. Sci 186 (2021) 110069.
6. Matsumae, T.: Scripta Mater. 191 (2021) 52.
7. Yang, S.: Mater. Res. Express 8 (2021) 085901.
#          8. Fukumoto, S.: Inter. Conf. Electron. Packaging – ICEP 2021, 9451935, p. 41.

Liang, J.B., Zhou, Y., Masuya, S., Gucmann, F., Singh, M.,  Pomeroy, J., Kim, S.,  Kuball, M., Kasu, M., and Shigekawa, N.: Effect of annealing temperature on diamond/Si interfacial structure. In: Proc. 2019 6th Inter. Workshop on Low Temp. Bonding for 3d Integration (LTB-3D), p. 3. (Not IEE SAS)

1. Li, M.: Forensic Sci Inter.-Genetics 44 (2020) 102169.
2. Ilyas, T.: Electronics 9 (2020) 383.
3. Pan, L.: IEEE Conf. Computer Vision Pattern Recog. (2020)‏ 1669.
4. Naveed, S.: Environment. Pollution 261 (2020) 114233.
5. French, M.A.: J. Infect. Diseases 221 (2020) 1232.
6. Naveed, S.: Ecotoxicol. Environment. Safety 206 (2020) 111200.
7. Zhang, P.: Electrochim. Acta 363 (2020) 137220.
8. Yang, J.: Environment. Res. 189 (2020) 109950.
9. Lin, J.-R.: Automat. Construct. 115 (2020) 103212.

Chauhan, P., Hasenöhrl, S., Dobročka, E., Chauvat, M.-P., Minj, A., Gucmann, F., Vančo, Ľ., Kováč, J.jr., Kret, S., Ruterana, P., Kuball, M., Šiffalovič, P., and Kuzmík, J.: Evidence of relationship between strain and In-incorporation: growth of N-polar In-rich InAlN buffer layer by OMCVD, J. Applied Phys. 125 (2019) 105304.

1. Biswas, D.: J. Applied Phys. 125 (2019) 225707.

Gucmann, F., Ťapajna, M., Pohorelec, O., Haščík, Š., Hušeková, K., and Kuzmík, J.: Creation of two-dimesional electron gas and role of surface donors in III-N metal-oxide-semiconductor high-electron mobility transistors, Phys. Status Solidi A  215 (2018) 1800090.

1. Song, K.: J. Phys. D 53 (2020) 345107.
2. Shi, Y.: IEEE Trans. Electron Dev. 67 (2020) 2290.
3. Duong D.N.: J. Applied Phys. 127 (2020) 094501.

Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Toth, L., Pecz, B., Micusik, M., Brunner, F., and Kuzmík, J.: Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties, Applied Surface Sci 426 (2017) 656-661.

1. Huang, H.: J. Phys. D 51(2018) 345102.
2. Jo, Y.J.: Electron. Mater. Lett. 15 (2019) 179.
3. Shi, Y.: IEEE Trans. Electron Dev. 66 (2019) 4164.
4. He, F.: Chinese J. Catal. 41 (2020) SI9.
5. Shi, Y.: IEEE Trans. Electron Dev. 67 (2019) 2290.
6. Asubar, J.T.: IEEE Electron Dev. Lett. 41 (2020) ‏ 693.
7. Cai, Y.: Japan. J. Applied Phys. 59 (2020) 041001.
8. Low, R.S.: Applied Phys. Express 14 (2021) 031004.
9. Dashtian, K.: Coord. Chem. Rev. 445 (2021) 214097.
10. Vauche, L.: ACS Applied Electron. Mater. 3 (2021) 1170.

Gucmann, F., Kúdela, R., Rosová, A., Dobročka, E., Mičušík, M., and Gregušová, D.: Optimization of UV-assisted wet oxidation of GaAs, J. Vacuum Sci Technol. B 35 (2017) 01A116.

1. Toyoshima, R.: Chem. Comm. 56 (2020) 14905.

Ťapajna, M., Válik, L., Gucmann, F., Gregušová, D., Fröhlich, K., Haščík, Š., Dobročka, E., Tóth, L., Pécz, B., and Kuzmík, J.: Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density, J. Vacuum Sci Technol. B 35 (2017) 01A107.

1. Meer, M.: Semicond. Sci Technol. 32 (2017) 04LT02.
2. Duan, T. L.: Nanoscale Res. Lett. 12 (2017) 499.
3. Gao, J.: Physica Status Solidi A 215 (2018) 1700498.
4. Le, S.P.: J. Applied Phys. 123(2018) 034504.
5. Takhar, K.: Applied Surface Sci 481 (2019) 219.
6. Duong, D.N.: J. Applied Phys. 127 (2020) 094501.
7. Schiliro, E.: AIP Adv. 10 (2020) 125017.
8. Nguyen, D.D.: J. Applied Phys. 130 (2021) 014503.

Gregušová, D., Gucmann, F., Kúdela, R., Mičušík, M., Stoklas, R., Válik, L., Greguš, J., Blaho, M., Kordoš, P., :Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment,. Applied Surface Sci 395 (2017) 140-144.

1. Silva, J.C.F.: J. Molecular Model. 23 (2017) 204.
2. Kumar, J.: J. Alloys Compounds 727 (2017) 1089.
3. Sharma, I.: J. Alloys Compounds 723 (2017) 50.
4. Zhou, Y.: J. Colloid Interface Sci 560 (2020) 769.

Ťapajna, M., Válik, L., Gregušová, D., Fröhlich, K., Gucmann, F., Hashizume, T., and Kuzmík, J.: Treshold voltage instabilities in AlGaN/GaN MOS-HEMTs with ALD-grown Al2O3 gate dielectrics: relation to distribution of oxide/semiconductor interface state density. In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 1-4.

1. Ding, L.: IEEE Conf. Computer Vision Pattern Recogn. 2018, pp. 6508-6516.
2. Dashtian, K.: Coord. Chem. Rev. 445 (2021) 214097.

Ťapajna, M., Stoklas, R., Gregušová, D., Válik, L., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Toth, L., Pecz, B., Micusik, M., Brunner, F., Hashizume, T., and Kuzmík, J.: On the origin of surface donors in AlGaN/GaN metal-oxide semiconductor heterostructures with Al2O3 gate dielectric—correlation of electrical, structural, and chemical properties. In: Inter. Workshop on Nitride Semicond. (IWN 2016) Orlando 2016.

1. Akazawa, M.: Phys. Status Solidi B 254 (2017) 1600691.

Gucmann, F., Gregušová, D., Válik, L., Ťapajna, M., Haščík, Š., Hušeková, K., Fröhlich, K., Pohorelec, O., and Kuzmík, J.: DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric prepared by various techniques. In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 9-12.

1. Hasan, Md. R.: J. Vacuum Sci Technol. B 35 (2017) 052202.
2. Pan, T.: Materiali in Tehnologije 52 (2018) 795.

Gucmann, F., Kúdela, R., Kordoš, P., Dobročka, E., Gaži, Š., Dérer, J., Liday, J., Vogrinčič, P., and Gregušová, D.: III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O2 plasma-oxidized GaAs cap, J. Vacuum Sci Technol. B 33 (2015) 01A111.

1. Grabnic, T.: Surface Sci 692 (2020) 121516.

Gucmann, F., Gregušová, D., Stoklas, R., Dérer, J., Kúdela, R., Fröhlich, K., and Kordoš, P.: InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator, Applied Phys. Lett. 105 (2014) 183504.

1. Kim, S.-H.: IEEE Electron Device Lett. 36 (2015) 884.
2. Kim, S.-H.: J. Nanosci Nanotechnol. 16 (2016) 10389.
3. Akazawa, M.: Phys. Status Solidi B 254 (2017) 1600691.
4. Bazaka, K.: Nanoscale 10 (2018) 17494.
5. Kim, S.-H.: ACS Applied Mater. Interfaces 10 (2018) 26378.

Fröhlich, K., Mičušík, M., Dobročka, E., Šiffalovič, P., Gucmann, F., and Fedor, J.: Properties of Al2O3 thin films grown by atomic layer deposition. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 171-174.

1. Naumann, F.: J. Vacuum Sci Technol. B 38 (2020) 014014.
2. Kim, Y.: ACS Applied Mater. Interfac. 12 (2020) 44912.

Válik, L., Ťapajna, M., Gucmann, F., Fedor, J., Šiffalovič, P., Fröhlich, K., : Distribution of fixed charge in MOS structures with ALD grown Al2O3 studied by capacitance measurements. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 227-230.

1. Freedsman, J.J.: IEEE Trans. Electron Dev. 60 (2013) 6579632.
2. Samanta, P.: Semicond. Sci Technol. 34 (2019) 115008.

Rodière, P., Klein,T., Lemberger, L., Hasselbach, K., Demuer, A., Kačmarčik, J., Wang, Z.S., Luo, H.Q., Lu, X.Z., Wen, H.H., Gucmann, F., and Marcenat, C.: Scaling of the physical properties in Ba(Fe,Ni)2As2 single crystals: Evidence for quantum fluctuations, Phys. Rev. B 85 (2012) 214506.

1. Shipulin, I.: Materials 13 (2020) 630.
2. Kurokawa, H.: Phys. Rev. B 104 (2021) 014505.