Ing. Hasenöhrl Stanislav

Chauhan, P., Hasenöhrl, S., Minj, A., Chauvat, M.P., Ruterana, P., and Kuzmík, J.: Growth evolution of N-polar Indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer, Applied Surface Sci 502 (2020) 144086.

1. Chen, L.: Crystal Growth Design 21 (2021) 2911.

Šichman, P., Hasenöhrl, S., Stoklas, R., Priesol, J., Dobročka, E., Haščík, Š., Gucmann, F., Vincze, A., Chvála, A., Marek, J., Šatka, A., and Kuzmík, J.: Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure, Mater. Sci Semicond. Process. 118 (2020) 105203.

1. Mochizuki, K.: Japan. J. Applied Phys. 60 (2021) 018002.
2. Pan, Y.: Inter. J. Energy Res. 45 (2021) 15512.

Hasenöhrl, S., Chauhan, P., Dobročka, E., Stoklas, R., Vančo, Ľ., Veselý, M., Bouazzaoui, F., Chauvat, M.-P., Reterana, P., and Kuzmík, J.: Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures, Applied Phys. Express 12 (2019) 014001.

1. Murugapandiyan, P.: J. Electronic Mater. ‏49 (2020) SI524.

Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., and Kuzmík, J.: Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs, Applied Surface Sci 528 (2020) 146824.

1. Tian, Y.: Inter. J. Electrochem. Sci 15 (2020) 12682.

Chauhan, P., Hasenöhrl, S., Dobročka, E., Chauvat, M.-P., Minj, A., Gucmann, F., Vančo, Ľ., Kováč, J.jr., Kret, S., Ruterana, P., Kuball, M., Šiffalovič, P., and Kuzmík, J.: Evidence of relationship between strain and In-incorporation: growth of N-polar In-rich InAlN buffer layer by OMCVD, J. Applied Phys. 125 (2019) 105304.

1. Biswas, D.: J. Applied Phys. 125 (2019) 225707.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Dobročka, E., Kováč, J.jr., Kováč, J., Ďurišová, J., and Pudiš, D.: Nanorods and nanocones for advanced sensor applications, Applied Surface Sci 461 (2018) 61-65.

1. Rajkumar, C.: Results in Phys. 15 (2019) 102647.
2. Rajkumar, C.: Vacuum 168 (2019) UNSP 108856.
3. Chen, Y.: Adv. Mater. 32 (2021) 2001668.

Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J.jr., Szobolovszký, R., and Novák, J.: GaP nanocones covered with silver nanoparticles for surface-enhanced Raman spectroscopy, Applied Surface Sci 461 (2018) 149-153.

1. Zeng, Y.: Applied Surface Sci 544 (2021) 148924.
2. Liu, Y.: Mater. Horizons ‏ 8 (2021)‏ 370.

Ťapajna, M., Vincze, A., Noga, P., Dobrovodsky, J., Šagátová, A., Hasenöhrl, S., Gregušová, D., and Kuzmík, J.: Determination of secondary-ions yield in SIMS depth profiling of Si, Mg, and C ions implanted GaN epitaxial layers. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 141-144.

1. Senevirathna, M.K.I.: J. Vacuum Sci Technol. B 38 (2020) 044002.
2. Hajek, F.: J. Lumin. 236 (2021) 118127.

Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, I.V., Ťapajna, M., Fröhlich, K., Haščík, Š., Gregor, M., and Kuzmík, J.: Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition, Applied Surface Sci 461 (2018) 255-259.

1. Ber, E.: IEEE Trans. Electron Dev. 66 (2019) 2100.
2. Zhang, X.-Y.: Nanoscale Res. Lett. 14 (2019) 83.
3. Liu, M.: Chinese Phys. B 29 (‏ 127101(2020.
4. Akkaya, A.: Mater. Today-Proc. 46 (2021) 6939.
5. Mohanty, S.: Applied Phys. Lett. 119 (2021) 042901.

Novák, J., Laurenčíková, A., Hasenöhrl, S., Eliáš, P., and Kováč, J.:Methanol sensor for integration with GaP nanowire photocathode, Proc. SPIE 10248, Nanotechnology VIII (2017) 102480E.

#       1. Zhao, T.: Lecture Notes in Electr. Engn. 567 (2020) 264.

Novák, J., Laurenčíková, A., Vávra, I., Hasenöhrl, S., and Reiffers, M.: Magnetic properties of InMnAs nanodots prepared by MOVPE, J. Magnetism Magnetic Mater. 327 (2013) 20-23.

1. Bouravleuv, A. D.: Nanotechnol. 27 (2016) 425706.
2. Bouravleuva, A.: J. Crystal Growth 468 (2017) 680.
3. Kodaira, R.: J. Crystal Growth 507 (2019) 241.

Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Stoklas, R., Blaho, M., Novotný, I., Križanová, Z., and Novák, J.:Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization. Applied Surface Sci 267 (2013) 60-64.

1. Vidu, R.: Frontiers in Systems Neurosci 8 (2014) 91.
#     2. Opris, I.: In Recent advances on the modular organization of the cortex. Springer 2015 ISBN: 978-94-017-9899-0. P. 339.
3. Jahromi, K.E.: IEEE Electron Device Lett. 37 (2016) 43.
4. Pampaloni, N.P.: Front. Neurosci 12 (2019) 953.

Novák, J., Križanová, Z., Vávra, I., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Novotný, I., Kováč, J., Šutta, P., and Mikulics, M.: Structural and optical properties of individual GaP/ZnO core-shell nanowires, Vacuum 98 (2013) 106-110.

1. Chee, C.Y.: Ceramics Inter. 40 (2014) 9997.
2. Karunakaran, C.: Powder Technol. 254 (2014) 480.

Hasenöhrl, S., Eliáš, P., Šoltýs, J., Stoklas, R., Laurenčíková, A., and Novák, J.: Zinc-doped gallium phosphide nanowires for photovoltaic structures, Applied Surface Sci 269 (2013) 72-76.

1. Chandiramouli, R.: Mater. Sci Engn. B 194 (2015) 55.
2. Lee, S.: ACS Applied Mater. & Interfaces 8 (2016) 16178.
3. Horley, P.: Physica E 83 (2016) 227.
4. Chen, J.-Y.: CRYSTENGCOMM 19 (2017) 975.
5. Mohammad, R.: Inter. J. Modern Phys. C 28 (2017) Iss. 3.
6. Kim, D.-H.: J. Electronic Mater. 46 (2017) 4750.

Novák, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Stoklas, R., Laurenčíková, A., and Mikulics, M.: Electrical and photoluminescence properties of individual GaP nanowires doped by zinc, Phys. Status Solidi a 209 (2012) 2505-2509.

1. Jiang, H.-B.: Chinese Sci Bull. 59 (2014) SI2135.
2. Wallentin, J.: Nano Lett. 14 (2014) 1707.
3. Tomioka, K.: J. Phys. D 47 (2014) SI394001.
4. Liao, G.: Sci Rep. 6 (2016) 28240.

Novák, J., Novotný, I., Kováč, J., Eliáš, P., Hasenöhrl, S., Križanová, Z., Vávra, I., and Stoklas, R.: Preparation of thin Ga-doped ZnO layers for core–shell GaP/ZnO nanowires, Applied Surface Sci 258 (2012) 7607-7611.

1. Jiang, Y.: Phys. Chem. Chem. Phys. 17 (2015) 16784.
2. Mohammad, R.: Physica E 73 (2015) 213.
3. Huang, J.-M.: Phys. Chem. Chem. Phys. 18 (2016) 15251.
4. Belorus, A.O.: IEEE NW Russia Young Researchers in Electr. Electron. Engn. Conf. (2019) 763.

Križanová, Z., Vávra, I., Hasenöhrl, S., Novák, J., : TEM analysis of InMnAs layers and dots prepared by low pressure MOVPE. Vacuum 86 (2012) 657-660.

1. Bouravleuv, A.D.: Semicond. 47 (2013) 1037.
2. Bouravleuv, A.: Applied Phys.Lett. 105 (2014) 232101.
3. Bouravleuv, A.: Physica Status Solidi-Rapid Res. Lett. 10 (2016) 554.

Hasenöhrl, S., Novák, J., Vávra, I., Šoltýs, J., Kučera, M., and Šatka, A.: Epitaxial growth of GaP/InxGa1-xP (xIn ≥ 0,27) virtual substrate for optoelectronic applications, J. Electr. Engn. 62 (2011) 93-98.

1. Shi, B.: J. Applied Phys. 127 (2020) 033102.
2. Turkoglu, A.: Solid State Comm. 334 (2021) 114390.

Novák, J., Telek, P., Vávra, I., Hasenöhrl, S., Reiffers, M., : MOVPE growth and properties of light emitting diodes with an incorporated InMnAs ferromagnetic layer. J. Crystal Growth 315 (2011) 78-81.

1. Dorokhin, M.V.: Solid State Phenomena 190 (2012) 89.
2. Pudis, D.: Applied Surface Sci 269 (2013) 161.

Novák, J., Vávra, I., Hasenöhrl, S., Reiffers, M., Štrichovanec, P., Magen, C., : Role of growth mode in the formation of magnetic properties of InMnAs grown by MOVPE. J. Crystal Growth 318 (2011) 576-579.

       1. Bouravleuva, A.: J. Crystal Growth 468 (2017) 680.

Novák, J., Vávra, I., Križanová, Z., Hasenöhrl, S., Šoltýs, J., Reiffers, M., Štrichovanec, P., : Dependence of Curie temperature on surface strain in InMnAs epitaxial structures. Applied Surface Sci 256 (2010) 5672-5675.

1. Bouravleuv, A.D.: Semicond. 47 (2013) 1037.
2. Bouravleuv, A.: Applied Phys.Lett. 105 (2014) 232101.
3. Bouravleuva, A.: J. Crystal Growth 468 (2017) 680.
4. Marcal, L.A.B.: Phys. Rev. B 96 (2017) 245301.

Novák, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Vávra, I., : Study of the growth and structural properties of InMnAs dots grown on high-index surfaces by MOVPE. Mater. Sci Semicond. Proc. 13 (2010) 167-172.

            1. Bouravleuv, A.D.: Semicond. 47 (2013) 1037.

Gregušová, D., Kučera, M., Hasenöhrl, S., Vávra, I., Štrichovanec, P., Martaus, J., Novák, J., : Impact of growth conditions on the spatial non-uniformities of composition in InGaP epitaxial layers. Physica Status Solidi c 4 (2007) 1419-1422.

1. Simon, J.: J. Applied Phys. 109 (2011) 013708.
2. Tomasulo, S.: IEEE J. Photovolt. 2 (2012) 56.

Novák, J., Hasenöhrl, S., Vávra, I., Kučera, M., : Influence of surface strain on the MOVPE growth on InGaP epitaxial layers. Applied Phys. 87 (2007) 511-516.

1. Nakano, T.: J. Crystal Growth 347 (2012) 25.
2. Bittner, Z.: 38th IEEE Photovoltaic Specialists Conf. (2012) 3158.
3. Peng, Y.: Comput. Mater. Sci 123 (2016) 65.
4. Hussain, Z.S.: J. Applied Phys. 119 (2016) 195702.
5. Knijn, P. J.: Phys. Chem. Chem. Phys. 18  (2016) 21296.
6. Gagliano, L.: Nano Lett. 16  (2016) 7930.
7. He, Y.: J. Mater. Sci-Mater. Electron. 30 (2019) 7203.

Peternai, L., Kováč, J., Irmer, G., Hasenöhrl, S., Novák, J., and Srnánek, R.: Investigation of graded InxGa1-xP buffer by Raman scattering method, Microelectr. J. 37 (2006) 487-490.

1. Chen, L.: ACS Nano‏ 14 (2020)‏ 13127.
2. Kuznetsov, A.S.: IEEE Conf. Russian Young Res. Electr. Electron. Engn. – ElConRus 2021, p. 1325.

Vincze, A., Šatka, A., Peternai, L., Kováč, J., Hasenöhrl, S., Veselý, M., : SIMS and SEM analysis of In1-x-yP LED structure grown on In1-xP graded buffer. Applied Surface Sci 252 (2006) 7279-7282.

1. Bouhemadou, A.: Mater. Sci Semicond. Process. 16 (2013) 718.
2. Mohammad, R.: Inter. J. Modern Phys. C 28 (2017) Iss. 3.

Novák, J., Hasenöhrl, S., Vávra, I., Kučera, M., : Spinodal-like decomposition of InGaP epitaxial layers grown on GaP substrates. Applied Surface Sci 252 (2006) 4178-4184.

1. Pastore, C.E.: Applied Surface Sci 256 (2010) 5681.
2. Feldman, E.P.: Phys. Rev. E 89 (2014) 062406.
3. Moskvin, P.P.: J. Phys. Studies ‏ 24 (2020) 1602.

Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., : Growth and characterisation of InxGa1-xP layers with composition close to crossover from direct to indirect band gap. J. Crystal Growth 275 (2005) e1281-e1286.

1. Wolos, A.: Spintronics 82 (2008) 325.
2. Kovac, J.: More Than Moore: Creating High Value Micro/Nanoelectr. Systems. Springer 2009. ISBN 0387755926.  P. 203-238.
3. Lankinen, A.: J. Crystal Growth 311 (2009) 4619.
4. Jenichen, A.: Physica Status Solidi B 247 (2010) 59.
5. Nicklas, J.W.: Applied Phys.Lett. 97 (2010) 091902.
6. Norizan, M. N.: IOP Conf. Ser.-Mater. Sci Engn. 209 (2017) 012029.

Hasenöhrl, S., Novák, J., Vávra, I., Šatka, A., : Material properties of graded composition InxGa1−xP buffer layers grown on GaP by organometallic vapor phase epitaxy. J. Crystal Growth 272 (2004) 633-641.

1. Sharma, T.K.: Semicond. Sci Technol. 23 (2008) 075031.
2. Sun, Y.R.: J. Crystal Growth 381 (2013) 70.
#     3. Gillan, E.G.: In Reference Module in Chemistry, Molecular Sci and Chemical Engn. Comprehensive Inorganic Chemistry II (Second Ed.): From Elements to Applications. Elsevier: 2013, Pp 969–1000.

Kicin, S., Kromka, A., Kúdela, R., Hasenöhrl, S., Schwarz, A., Novák, J., : Micro-Raman study of InGaP composition grown on V-grooved substrates. Materials Sci Engn. B 113 (2004) 111-116.

1. Smyth, T.: IEEE J. Photovolt. 6 (2016) 166.
2. Yaccuzzi, E.: J. Phys. D 54 (2021) 115302.

Novák, J., Hasenöhrl, S., Kučera, M., Šoltýs, J., : Nano-patterning surfaces by the self-organized growth of ordered and strained epitaxial layers. Superlatt. Microstruct. 36 (2004) 123-131.

1. Zhou, J.: Microelectr. J. 38 (2007) 1207.
2. Kaiju, H.: Applied Surface Sci 255 (2009) 3706.

Eliáš, P., Kostič, I., Šoltýs, J., Hasenöhrl, S., : Wet-etch bulk micromachining of (100) InP substrates. J. Micromech. Microengn. 14 (2004) 1205–1214.

1. Xu, G.Y.: Applied Phys. Lett. 89 (2006) 161102.
2. Xu, G.Y.: J. Crystal Growth 301-302 (2007) 927.
*         3. Arrioja, D. A. M.: PhD Thesis. Orlando: Univ. Central Florida 2006.
*         4. Lamontagne, B.: Optical waveguides: From Theory to Applied Technologies. Eds. M. L. Calvo,  V. Lakshminarayanan. CRC 2007. ISBN-10: 1-57444-698-3. P. 283.
*         5. Tang, D.: Semicond. Technol. 34 (2009) 543.
*         6. Mounier, M.: PhD Thesis. Sherbrooke: Univ. de Sherbrooke. 2009.
7. Chen, L: IEEE Photonics Technol. Lett. 22 (2010) 890.
8. Wu, W.: ACS Nano 5 (2011) 7488.
9. Andres-Garcia, B.: IEEE Trans. Antennas Propagation 59 (2011) 3164.
10. Yang, H.: Proc. SPIE 8439 (2012) 843925.
*       11. Kaspar, P.: PhD Thesis. Zürich: ETH 2012.
12. Nia, H.I.: ECS Solid State Lett. 2 (2013) P44.
*       13. Garcia, B.A.: PhD Thesis. Madrid: Univ. Carlos III de Madrid. 2013.
14. Kim, S.H.: Nano Lett. 15 (2015) 641.
15. Prinz, V.Y.: Sci Rep. 7 (2017) 43334.
16. Chappell, G.A.: Optical Mater. Express 10 (2020)‏ 3328.
17. Suttijalern, K.: J. Micromech. Microengn. 31 (2021) 085007.

Hasenöhrl, S., Novák, J., Kúdela, R., Betko, J., Morvic, M., Fedor, J., : Anisotropy in transport properties of ordered strained InGaP. J. Crystal Growth 248 (2003) 369.

1. Sigman, M.B.: J. American Chemical Soc. 127 (2005) 10089.
2. Huang R.-R.: Chinese J. Struct. Chem. 34 (2015) 594.

Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., Alonso, M., Garriga, M., : Influence of ordered and random parts on properties of InGaP alloy grown by MOVPE. In: EW MOVPE X. Univ. Lecce 2003. P. 161.

      1. Zakaria, A.: J. Applied Phys. 108 (2010) 074908.

Hasenöhrl, S., Kúdela, R., Novák, J., Tuomi, T., Knuuttila, L., : Anisotropic surface structure in ordered strained InGaP. Materials Sci Engn. B 88 (2002) 134-138.

#        1. Cao, X.: Jingti Xuebao/J. Synthetic Crystals 39 (2010) 1406.
2. Ye, Z.C.: Trans. Nonferrous Metals Soc China 21 (2011) 146.
3. Kim, T.W.: J. Vacuum Sci Technol. A 35 (2017) 031507.

Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., Alonso, M., Garriga, M., : Effect of strain and ordering on the band-gap energy of InGaP. Materials Sci Engn. B 88 (2002) 139-142.

1. Kakumu, T.: Japan. J. Applied Phys. 42 (2003) 2230.
2. Yang, M.D.: Optics Express 16 (2008) 15754.
3. Yang, M.D.: Japan. J. Applied Phys. 47 (2008) 4499.
4. Longo, M.: J. Crystal Growth 311 (2009) 4293.
5. Jakomin, R.: Thin Solid Films 520 (2012) 6619.

Eliáš, P., Hasenöhrl, S., Fedor, J., Cambel, V., : Hall bar device processing on patterned substrates using optical lithography. Sensors Actuators A 101 (2002) 150-155.

1. Deen, M.J.: J. Mater. Sci 17 (2006) 549¬57.
2. Sakamoto, N.: JSME Inter. J. Ser. C 49 (2006) 361.
*    3. Deen, J.: Springer Handbook Electr. Photonic Materials. Eds. S. Kasap and P. Capper. Springer 2007. ISBN-13: 978-0-387-26059-4. P. 419.
4. Deen, J.: Springer Handbook of Electronic and Photonic Materials. 2nd ed. Eds. S. Kasap and P. Capper. Springer 2017. ISBN-13: 978-3319489315. P. 453.
5. Wang, Y.: J. Phys.-Energy 3 (2021) 012004.

Eliáš, P., Kostič, I., Hasenöhrl, S., : Polar diagram of wet-etched (100) InP. In: 14th Indium Phosphide and Related Materials Conf. Piscataway: IEEE 2002. ISBN: 1092-8669. P. 229-231.

#     1. Yu, J.: Pan Tao Ti Hsueh Pao/Chinese J. Semicond. 27 (2006) 1732.
#     2. Jinyong, Y.: Proc. 8th Inter. Conf. Solid-State Integr. Circuit Technol. ICSICT-2006. Piscataway: IEEE 2006. P. 872.
#     3. Yu, J.: Pan Tao Ti Hsueh Pao/Chinese J. Semicond. 28 (2007) 154.
*     4. Dummer, M.M.: PhD Thesis. Santa Barbara: Univ. California. (2008) 285 p.
#     5. Yu, J.: J. Semicond. 30 (2009) 114001.
6. Cohen-Elias, D.: 71st Device Res. Conf. IEEE Device Res. Conf. Proc. 2013.
7. Calabretta, N.: J. Optics 20 (2018) 044001.

Novák, J., Hasenöhrl, S., Alonso, M., Garriga, M., : Influence of tensile and compressive strain on the band gap energy of ordered InGaP. Applied Phys. Lett. 79 (2001) 2758-2760.

1. Scardova, S.: Physica Status Solidi A 195 (2003) 50.
2. Kinaci, B.: J. Mater. Sci-Mater. Electron. 24 (2013) 1375.
3. Hussein, M.T.: Indian J. Phys. 87 (2013) 1079.
#     4. Khan, H.A.: IEEE J. Quantum Electron. 50 (2014) 1044.
#     5. Zhang, Y.: European Microwave Week  2014 – EuMW 2014. Art. no. 6986486, p. 524.

Kuzmík, J., Hasenöhrl, S., Kúdela, R., Haščík, Š., Mozolová, Ž., Lalinský, T., Breza, J., Vogrinčič, P., Škriniarová, J., Fox, A., and Kordoš, P.: InGaAs/InGaP HEMTs: technological optimization and analytical modelling, Vacuum 61 (2001) 333-337.

      1. Li, A.Z.: J. Crystal Growth 251 (2003) 816.

Eliáš, P., Cambel, V., Hasenöhrl, S., and Kostič, I.: MOCVD growth of InP and InGaAs on InP non-planar substrates patterned with {1 1 0} quasi facets, J. Crystal Growth 233 (2001) 141-149.

       1. Poole, P.J.: J. Crystal Growth 310 (2008)1069.
*     2. Deura, M.: PhD Thesis. Univ. Tokyo 2010.

Kicin, S., Novák, J., Hasenöhrl, S., Kučera, M., and Meertens, D.: Photoluminescence characterization of InGaP/GaAs/InGaP quantum wires, Materials Sci & Engn. B 80 (2001) 184-187.

      1. Kwon, S.: Physical Rev. E 73 (2006) 025102.

Lalinský, T., Škriniarová, J., Kuzmík, J., Hasenöhrl, S., Fox, A., Tomáška, M., Mozolová, Ž., Kordoš, P., Kovačik, T., and Haščík, Š.: Technology and performance of 150 nm gate length InGaP/InGaAs/GaAs pHEMTs, Vacuum 61 (2001) 323-327.

1. Li, A.Z.: J. Crystal Growth 251 (2003) 816.
2. Mil’shtein, S.: Microelectr. J. 40 (2009) 554.

Cambel, V., Karapetrov, G., Eliáš, P., Hasenöhrl, S., Kwok, W., Krause, J., and Maňka, J.: Approaching the pT range with a 2DEG InGaAs/InP Hall sensor at 77 K, Microelectr. Engn. 51-52 (2000) 333-342.

1. Boero, G.: Sensors & Actuators A 106 (2003) 314.
2. Mosser, V.: Proc. SPIE 5115 (2003) 183.
*    3. Li, Y.: PhD Thesis. Florida State Univ. 2003.
4. Popovic, R.: Smart Sensors and MEMS. 2004.
5. Hicks, C.W.: Applied Phys. Lett. 90 (2007) 1333512.
6. Kirtley, J.R.: Reports Progress Phys. 73 (2010) 126501.
*    7. Lipert, K.: Development of a micro-Hall magnetometer and studies of individual Fe – filled carbon nanotubes. PhD Thesis. Heidelberg Univ. 2011.
#     8. Chesnitskiy, A.V.: Russian Microelectr. 45 (2016) 105.
9. Mosser, V.: IEEE Trans. Instrum. Measurement 66 (2017) 637.
10. Alpert, H. S.: IEEE Sensors J. 19 (2019) 3640.

Attolini, G., Bocchi, C., Germini, F., Pelosi, C., Parisini, A., Tarricone, L., Kúdela, R., and Hasenöhrl, S.: Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE ,Materials Chemistry & Physics 66 (2000) 246-252.

1. Chiu, H.C.: Solid-State Electron. 49 (2005) 1391.
2. Saly, V.: Renewable Energy 31 (2006) 865.
3. Tsai, J.-H.: Applied Phys. Lett. 106 (2015) 063502.

Kúdela, R., Kučera, M., Olejníková, B., Eliáš, P., Hasenöhrl, S., and Novák, J.: Formation of interfaces in InGaP/GaAs/InGaP quantum wells, J. Crystal Growth 212 (2000) 21-28.

1. Nakano, T.: J. Crystal Growth 221 (2000) 136.
2. Wallart, X.: Applied Phys. Lett. 81 (2002) 1086.
3. Wallart, X.: Phys. Rev. B 68 (2003) 235314.
*    4. Begotti, M.: 10th European Workshop on MOVPE. Lecce 2003.
5. Gladkov, P.: ASDAM 2004. Piscataway: IEEE 2004. P. 17.
6. Oliveira, C.L.N.: Applied Surface Sci 234 (2004) 38.
7. Laureto, E.: Inter. J. Modern Phys. B 18 (2004) 1743.
8. Chang, Y.M.: Applied Phys. Lett. 84 (2004) 2548.
9. Pelosi, C.: Crystal Research Technol. 40 (2005) 982.
10. Ribeiro, E.: Phys. Rev. B 73 (2006) 075330.
11. Pelosi, C.: J. de Physique IV 132 (2006) 205.
12. Zhang, X.B.: J. Electronic Mater. 35 (2006) 705.
13. Bosi, M.: Progress in Photovoltaics 15 (2007) 51.
14. Frigeri, C.: J. Electrochem. Soc. 156 (2009) H448.
15. Frigeri, C.: Superlatt. Microstr. 45 (2009) 451.
16. Silva, A.A.P.: J. Applied Phys. 106 (2009) 083521.
17. Frigeri, C.: Nanoscale Research Lett. 6 (2011) 194.
18. Bender, D.A.: Applied Phys. Lett. 102 (2013) 252102.
19. Wells, N.P.: J. Applied Phys. 118 (2015) 065703.
20. Ladugin, M. A.: Inorganic Mater. 55 (2019) 315.

Mareš, J., Krištofik, J., Hubík, P., Feng, X., Novák, J., and Hasenöhrl, S.: Highly disordered two-dimensional electron systém in a weak magnetic field, Europhys. Lett. 45 (1999) 374-380.

1. Horváth, Zs.J.: Proc. SPIE 4746 (2002) 265.
2. Horváth, Zs.J.: Current Applied Phys. 6 (2006) 205.

Kicin, S., Novák, J., Kučera, M., Hasenöhrl, S., Eliáš, P., Vávra, I., and Hudek, P.: Preparation of stair-step grooves by wet etching of AlAs/GaAs heterostructures and MOCVD growth of QWR, Materials Sci Engn. B 65 (1999) 106-110.

      1. Clawson A.R.: Materials Sci Engn. R 31 (2001) 1.
*    2. Gopal, M.: PhD Thesis. Nat. Univ. Singapore 2008.

Eliáš, P., Cambel, V., Hasenöhrl, S., Hudek, P., and Novák, J.: SEM and AFM characterisation of high MESA patterned InP subtrated prepared by wet etching, Mater. Sci Engn. B 66 (1999) 15-20.

1. Clawson, A.R.: Materials Sci Engn. R 31 (2001) 1.
2. Bandaru, P.: Materials Res. Soc. Symp. – Proc. 782 (2003) 471.
3  Kim, J.-H.: J. Electronic Mater. 37 (2008) 361.

Cambel, V., Kúdela, R., Gregušová, D., Hasenöhrl, S., Eliáš, P., and Novák, J.: Characterization of 2DEG Hall probes in high magnetic field at 4,2K. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 31.

          1. Gonzalez-Jorge, H.: Cryogenics 46 (2006) 736.

Cambel, V., Gregušová, D., Eliáš, P., Hasenöhrl, S., Olejníková, B., Novák, J., Schaepers, T., Neurohr, K., and Fox, A.: Characterization of InGaAs/InP microscopic Hall probe arrays with 2DEG active layer, Mater. Sci Engn. B 51 (1998) 188.

1. Bydžovský, J.: Sensors Actuators A 91 (2001) 21.
2. Vavra, I.: Sensors Actuators A 91 (2001) 177.

Hasenöhrl, S., Kučera, M., Novák, J., Bujdák, M., Eliáš, P., and Kúdela, R.: MOCVD growth of InxGa1-xAs/GaAs multiple quantum well and superlattice structures for optical modulators, Solid State Electron. 42 (1998) 263.

     1. Donkor, E.: Semiconductors Semimetals 73 (2001) 15.

Kúdela, R., Olejníková, B., Kučera, M., and Hasenöhrl, S.: MOVPE growth of InGaP/GaAs interfaces. In: HEAD 97. Eds. P. Kordoš et al. NATO ASI Ser. 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 123.

     1. Bludska, J.: Czechoslov. J. Phys. 49 (1999) 775.

Mareš, J., Krištofik, J., Hubík, P., Hulicius, E., Melichar, K., Pangrác, J., Novák, J., and Hasenöhrl, S.: Out-of-plane weak localization in two-dimensional electron structures, Phys. Rev. Lett. 80 (1998) 4020.

1. Raichev, O.E.: J. Phys.-Condensed Matter 12 (2000) 589.
2. Shlimak, I.: Phys. Rev. B 61 (2000) 7253.
3. Shlimak, I.: Philos. Magazine B 81 (2001) 1093.
4. Ganichev, S.D.: Phys. Rev. B 63 (2001) 201204.
5. Zumbuhl, D.M.: Phys. Rev. B 69 (2004) Art. No. 121305.
*    6. Zumbuhl, D.M.: PhD Thesis. Massachusetts: Harvard Univ. Cambridge,
(2004).

Novák, J., Hasenöhrl, S., Kúdela, R., and Kučera, M.: Resistivity anisotrophy in ordered InGaP grown at 640 C, Applied Phys. Lett. 73 (1998) 369.

1. Fink, V.: Applied Phys. Lett. 79 (2001) 2384.
2. Li, J.H.: Phys. Rev. B 63 (2001) 155310.
3. Jakomin, R.: Thin Solid Films 520 (2012) 6619.

Novák, J., Hasenöhrl, S., Kučera, M., Hjelt, K., and Tuomi, T.: Sulphur doping of GaSb grown by atmospheric pressure MOVPE, J. Crystal Growth 183 (1998) 69.

1. Wiersma, R.D.: Phys. Rev. B 67 (2003) 165202.
2. Han, F.: Chem. Phys. Lett. 651 (2016) 183.

Kováč, P., Cambel, V., Gregušová, D., Eliáš, P., Hušek, I., Kúdela, R., Hasenöhrl, S., and Ďurica, M.: Testing of homogenity of Bi(2223)/Ag tapes by Hall probe array, IoP Conf. Series No. 158 (1997) 1311.

1. Gomory, F.: Physica C 308 (1998) 203.
2. Schauer, W.: Proc. 9th CIMTEC. Florence 1998. P. 436
3. Herrmann, J.:  IEEE Trans. Applied Supercond. 9 (1999) 1824.
4. Lehndorff, B.R.: Springer Trans. Modern Phys. 171 (2001) 1.
5. Bydžovský, J.: Sensors Actuators A 91 (2001) 21.

Kováč, J., Uherek, F., Šatka, A., Waclawek, J., Jakabovič, J., Srnánek, R., Rheinländer, B., Gottschalch, V.,Hasenöhrl, S., Novák, J., Barna, A., and Wood, J.: InAlGaAS-InGaAs-InP RCE PIN Photodiode for 1300nm wavelength region. In: 8th Inter. Conf. Indium Phosphide Related Materials – IPRM ’96. Ed. J.Lorenzo. Piscataway: IEEE 1996. P. 219.

#     1. Jervase, J.A.: IEEE J. Quantum Electronics 36 (2000) 325.
#     2. El-Batawy, Y.M.: Proc. SPIE 4999 (2003) 363.
#     3. El-Batawy, Y.: In Photodetectors. Woodhead Publ. 2016. ISBN: 978-1-78242-445-1. P. 415-470.

Hasenöhrl, S., Hardtdegen, H., Ungermanns, C., : MOCVD growth of GaAs, AlAs an InP using H2/N2 ambient mixturees. In: 6th Europ. Workshop MOVPE and Related Growth Techn. Gent: 1995 D-12..

        1. Schon, O.: J. Crystal Growth 190 (1998) 335.

Hardtdegen, H., Ungermanns, C., Hollfelder, M., Raafat, T., Carius, R., Hasenöhrl, S., and Lüth, H.: A new approach towards low-pressure metalorganic vapor phase epitaxy of (AlGa)As using triethylgallium and dimethylethylaminealane, J. Crystal Growth 145 (1994) 478-484.

1. Watanabe, N.: Japan. Applied Phys. 34 (1995) L473.
2. Werner, P.: Applied Phys. Lett. 69 (1996) 409.
3. Pautet, C.: Applied Phys. Lett. 69 (1996) 209.
4. Schafer, P.: Advanced Mater. Optic Electr. 10 (2000) 169.
5. Keiper, D.: J. Crystal Growth 233 (2001) 121.
6. Keiper, D.: J. Crystal Growth 233 (2001) 126.
7. Su, X.: AIP Adv. 8 (2018) 075301.

Hjelt, K., Sopanen, M., Lipsanen, H., Tuomi, T., and Hasenöhrl, S.: The effect of praseodymium dioxide on the optical properties of LPE-grown InGaAsP layers. In: Optoelectr. Lab. Annual Report. Helsinki: Univ. Technol. 1992. P. 26.

1. Jiang, G.C.: Crystal Res. Technol. 31 (1996) 365.
2. Jiang, G.C.: Japan. J. Applied Phys. 1 35 (1996) 2020.

Novák, J., Hasenöhrl, S., and Kuliffayová, M.: Gettering properties of PrO2 in In0.53Ga0.47As LPE growth, J. Crystal Growth 110 (1991) 862.

1. Wu, M.-CH.: Japan. J. Applied Phys. 30 (1991) 2679.
2. Lai, M.Z.: J. Applied Phys. 72 (1992) 1312.
3. Amano, T.: Japan. J. Applied Phys. 31 (1992) 2185.
4. Wu, M.C.: J. J. Applied Phys. 71 (1992) 456.
5. Yamaguchi, T.: Japan. J. Applied Phys. 1 32 (1993) Suppl 664.
6. Wu, M.C.: Japan. J. Applied Phys. 32 (1993) 2587.
7. Wu, M.C.: J. Crystal Growth 139 (1994) 251.
8. Jiang, G.C.: J. Crystal Growth 152 (1995) 127.
9. Lai, M.Z.: Crystal Res. Technology 30 (1995) 433.
10. Ho, W.J.: IEEE Trans. Electron Dev. 42 (1995) 639.
11. Choi, S.J.: J. Korean Phys. Soc 28 (1995) S145.
12. Jiang, G.C.: Cryst. Res. Tech. 31 (1996) 365-371.
13. Jiang. G.C.: Japan. J. Applied Phys. 35 (1996) 2020-2024.
14. Chang. L.B.: Cryst. Res. Tech. 31 (1996) 911-915.
15. Chang, L.B.: IoP Conf. Ser. I 155 (1997) 291.
*   16. Hjelt K.  Photoluminescence  and  growth of  compound semi-condutors, Espoo, 1997.
17. Chang L.B.: Japan. J. Appl. Phys. 36 (1997) 7264.
18. Chang L.B.: Japan. J. Appl. Phys. 36 (1998) 811.
19. Chang, L.B.: J. Crystal Growth 199 (1999) 1092.
20. Cheng, Y.C.: Microelectr. Engn. 65 (2003) 223.
#   21. Procházková, O.: Physica Status Solidi C 2 (2005) 1269.
22. Hassan, M.: Central Europ. J. Phys. 4 (2006) 117.