Ing. Huran Jozef, CSc.

Šály, V., Perný, M., Janíček, F., Huran, J., Mikolášek, M., and Packa, J.: Impedance spectroscopy of heterojunction solar cell a-SiC/c-Si with ITO antireflection film investigated at different temperatures, J. Phys.: Conf. Ser. 829 (2017) 012019.

#       1. Wang, C.: Kuei Suan Jen Hsueh Pao/J. Chinese Ceramic Soc 45 (2017) 1555.
2. Seba, H.Y.: Thin Solid Films 699 (2020) 137891.

Bystritsky, V.M., Dudkin, G.N., Filipowicz, M., Huran, J., Krylov, A.R., Nechaev, B.A., Padalko, V.N., Penkov, F.M., Philippov, A.V., and Tuleushev, Yu.Zh.: Effect of pd and dd reactions enhancement in deuterides TiD2, ZrD2 and Ta2D in the astrophysical energy range, Phys. Particles Nuclei Lett. 13 (2016) 79-97.

1. Steinetz, B.M.: Phys. Rev. C 101 (2020) 044610.

Balalykin N. I., Huran,  J., Nozdrin, M.A., Feshchenko, A.A., Kobzev, A.P., and Sasinková, V.: Transmission photocathodes based on stainless steel mesh and quartz glass coated with n doped DLC thin films prepared by reactive magnetron sputtering, J. Phys.:Conf. Ser. 700 (2016) 012050.

1. Liu, L.: Applied Phys. A 125 (2019) 366.

Perný, M., Šály, V., Mikolášek, M., Váry, M., and Huran, J.: Solar cell heterojunction a-SiC:H/c-Si structure under dark and illumination. In: Proc. 16th Inter. Sci Conf. on Electric Power Engn. (EPE). Eds. S. Rusek and R. Gono. Ostrava: VSB-TU 2015. ISBN: 978-1-4673-6788-2. P. 672-675.

1. Olayiwola, O.I.: IEEE Energy Conversion Congress and Exposition 2017. P. 2310.

Huran,  J., Hrubčín, L., Boháček, P., Borzakov, S.B., Skuratov, V.A., Kobzev, A.P., Kleinová, A., and Sasinková, V.: The effect of xe ion and neutron irradiation on the properties of SiC and SiC(N) film prepared by PECVD technology. In: RAD Proc. Ed. G. Ristič. Niš: RAD Ass. 2015. ISBN: 978-86-80300-01-6. P. 399-403.

1. Su, Q.: Acta Materialia 165 (2019) 587.

Kleinová, A., Huran,  J., Sasinková, V., Perný, M.,  Šály, V., and Packa, J.: FTIR spectroscopy of silicon carbide thin films prepared by PECVD technology for solar cell application, Proc. SPIE 9563 (2015) 95630U.

#      1. Khan, S.: Inter. IEEE/EMBS Conf. Neural Engn. 2017, NER 8008337, pp. 247.
2. Quang Hung T.: HELIYON 4 (2018) e00522.
3. Jurkeviciute, A.: Adv. Engn. Mater. (2020) 1900951.
4. Jeon, I.K.: Powder Technol. 359 (2020) 181.
5. Truong, T.B.: Electrochim. Acta 365 (2021) 137287.

Perný, M., Huran, J., Šály, V., Váry, J., Packa, J., and Kobzev, A.P.: Electrical and structural characterization of carbon based films prepared by RF-PECVD and ECR-PECVD techniques for photovoltaic applications, J. Optoelectr. Adv. Mater. 16 (2014) 306-310.

1. Power, A.C.: Nanotechnol. Rev. 7 (2018) 19.

Perný, M., Šály, V., Váry, M., Mikolášek, M., Huran, J., and Packa, J.: AC impedance spectroscopy of Al/a-SiC/c-Si(p)/Al heterostructure under illumination, J. Electr. Engn. 65 (2014) 174-178.

 1. Panigrahi, J.: Solar Energy 136 (2016) 412.
2. Nawar, A.M.: J. Alloys Comp. 767 (2018) 1271.
3. Edgar, C.J.: J. Prev. Alzheimers Dis.6 (2019) 223.
4. Mabunda, N.E.: Energies 12 (2019) 2811.
5. Seba, H.Y.: Thin Solid Films 699 (2020) 137891.
6. Carmen Mejia, M. del.: J. Phys. D 54 (2021) 195101.

Bystritsky, V.M., Bystritskii, Vit.M., Dudkin, G.N., Filipowicz, M., Gaži, Š., Huran, J., Nechaev, B.A., Padalko, V.N., Parzhitskii, S.S., Penkov, F.M., Philippov, A.V., and Tuleshev, Yu.Zh.: First experimental evidence of D(p, ᵧ)3He reaction in deuteride titanium in ultralow collision energy region, Nuclear Instr. Methods Phys. Res. A 753 (2014) 91-96.

1. Bagulya, A. V.: Phys. Particl. Nuclei 48 (2017) 691.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Tuleushev, Y., : Effect of the crystal structure of a deuterated target on the yield of neutrons in the dd reaction at ultralow energies. JETP Lett. 99 (2014) 497-502.

       1. Molodets, A.M.: Phys. Solid State 56 (2014) 2524.
2. Bagulya, A.V.: J. Surface Invest. 11 (2017) 58.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Tuleushev, Y., Varlachov, V., : Experimental verification of hypothesis of dd reaction enhancement by channeling of deuterons in titanium deuteride at ultralow energies,. Nuclear Instr. Methods Phys. Res. A 764 (2014) 42-47.

1. Bagulya, A.V.: Nuclear Instr. Methods in Phys. Res. B  402 (2017) 243.
2. Bagulya, A. V.: Phys. Particl. Nuclei 48 (2017) 691.
3. Choudhury, R.K.: EPL 126 (2019) 12002.
4. Schenkel, T.: J. Applied Phys. 126 (2019) 203302.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Tuleushev, Y., : First experimental evidence of D(p, ᵧ)3He reaction in titanium deuteride in ultralow collision energy region,. J. Experiment. Theoret. Phys. 119 (2014) 54-62.

       1. Bagulya, A.V.: J. Surface Invest. 11 (2017) 58.

Bystritsky, V., Kobzev, A., Krylov, A., Parzhitskii, S., Philippov, A., Dudkin, G., Nechaev, B., Padalko, V., Penkov, F., Tuleushev, Y., Filipowicz, M., Bystritsky, V., Gaži, Š., Huran, J., : Study of the d(p, ᵧ)3He reaction at ultralow energies using a zirconium deuteride target,. Nuclear Instr. Methods Phys. Res. A 737 (2014) 248-252.

       1. Purcell, J.E.: Nuclear Data Sheets 130 (2015) 1.
2. Bagulya, A. V.: Phys. Particl. Nuclei 48 (2017) 691.

Huran, J., Boháček, P., Shvetsov, V., Kobzev, A., Kleinová, A., Sasinková, V., Balalykin, N., Sekáčová, M., and Arbet, J. : Amorphous silicon carbide thin films deposited by plasma enhanced chemical vapor deposition at different temperature for hard environment applications. In: 21st Inter. Symp. Plasma Chemistry. Cairns (Australia) 2013. Výveska.

 1. Marvi, Z.: RSC Adv. 7 (2017) 19189.
2. van Laar, J. H.: J. Europ. Ceramic Soc 38 (2018) 1197.
3. Lukianov, A.N.: J. Alloys Compounds 801 (2019) 285.

Perný, M., Mikolášek, M., Šály, V., Ružinský, M., Ďurman, V., Pavúk, M., Huran, J., Országh, J., Matejčík, Š., :Behaviour of amorphous silicon carbide in Au/a-SiC/Si heterostructures prepared by PECVD technology using two different RF modes,. Applied Surface Sci 267 (2013) 143-147.

1. Leal, G.: Mater. Res.-Ibero-American J. Mater. 17 (2014) 472.
2. Drinek, V.: Applied Surface Sci 292 (2014) 413.
#    3. Campos, T.M.B.: Mater. Research 17 (2014) 472.
4. Barbouche, M.: Inter. J. Adv. Manufact. Technol. 106 (2020) 731.

Huran, J., Boháček, P., Shvetsov, V., Kobzev, A., Kleinová, A., Borzakov, S., Hrubčín, L., Sekáčová, M., and Balalykin, N.: Neutron-irradation effect on the electrical chracteristics of amorphous silicon carbide and nitrogen-doped silicon carbide films prepared by PECVD technology, Phys. Status Solidi a 210 (2013) 2756-2761.

  1. Mutch, M.J.: Microelectron. Reliab. 63 (2016) 201.
2. Wei, J.: Ceramics Inter. 44 (2018) 20375.|
3. Su, Q.: Acta Materialia 165 (2019) 587.

Huran, J., Valovič, A., Boháček, P., Shvetsov, V., Kobzev, A., Borzakov, S., Kleinová, A., Sekáčová, M., Arbet, J., and Sasinková, V.: The effect of neutron irradiation on the properties of SiC and SiC(N) layer prepared by plasma enhanced chemical vapor deposition, Applied Surface Sci 267 (2013) 88-91.

1. El Khalfi, A.: Spectroscopy Lett. 47 (2014) SI392.
2. Wang, B.: Nanoscale 7 (2015) 14489.
3. Wang, R.: Plasma Process. Polym. 14 (2017) e1600248.
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5. Baskar, S.: J. Surface Sci Technol. 34 (2018) 116.
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7. Su, Q.: Acta Materialia 165 (2019) 587.
8. Baskar, S.: Adv. Mater. Process. Technol. 5 (2019) 438.
9. Baskar, S.: J. Surface Sci Technol. 35 (2019) 107.
#  10. Baskar, S.: Inter. J. Engn. Adv. Technol. 8 (2019) 787.

Huran, J., Valovič, A., Kobzev, A., Balalykin, N., Kučera, M., Haščík, Š., Malinovsky, L., and Kováčová, E.: Stuctural and physical characteristics of PECVD nanocrystalline silicon carbide thin films. Phys. Procedia 32 (2012) 303-307.

#   1. Wan, M.: Zhenkong Kexue yu Jishu Xuebao/J. Vacuum Sci Technol. 35 (2015) 424.

Huran, J., Valovič, A., Kučera, M., Kleinová, A., Kováčová, E., Boháček, P., and Sekáčová, M.: Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: properties, J. Electr. Engn. 65 (2012) 333-335.

1. Gangopadhyay, U.: J. Renewable Sustainable Energy 5 (2013) 031607.
2. Ivashchenko, V.I.: Thin Solid Films 569 (2014) 57.
#   3. Kozak, A.O.: J. Nano- and Electron. Phys. 6 (2014) 04047.
4. Fainer, N. I.: J. Struct. Chem. 56 (2015) 163.
5. Fainer, N. I.: ECS J. Solid State Sci Technol. 4 (2015) SIN3153.
6. Haacke, M.: Europ. Phys. J.-Special Top. 224 (2015) 1935.
7. Porada, O. K.: J. Superhard Mater. 38 (2016) 263.
8. Khatami, Z.: Thin Solid Films 622 (2017) 1.
9. Fainer, N. I.: J. Struct. Chem. 58 (2017) 119.
10. Porada, O. K.: J. Nano- Electron. Phys. 9 (2017) 02022.
11. Fainer, N.I.: Glass Phys. Chem. 43 (2017) 410.
12. He, W.: J. Ceramic Soc Japan 126 (2018) 253.
13. Khatami, Z.: J. Luminesc.196 (2018) 504.
14. Khatami, Z.: ECS J. Solid State Sci Technol. 7 (2018) N7.
15. Fainer, N.I.: Glass Phys. Chem. 44 (2018) 607.
16. Porada, O. K.: J. Superhard Mater. 41 (2019) 32.
17. Sukach, A.V.: J. Non-Crystall. Solids 523 (2019) UNSP 119603.
18. Fainer, N.I.: J. Struct. Chem.‏ 61 (2020) 1865.

Huran, J., Balalykin, N., Shirkov, G., Boháček, P., Kobzev, A., Valovič, A., Malinovsky, L., Sekáčová, M., :Characterization of nanocrystalline diamond/amorphous composite carbon films prepared by PECVD technology. Phys. Procedia 32 (2012) 875-879.

         1. Zhang, X.: J. Applied Phys. 115 (2014) 063508.

Bystritsky, V.M., Bystritskii, Vit.M., Dudkin, G.N., Filipowicz, M., Gaži, Š., Huran, J., Kobzev, A.P., Mesyats, G.A., Nechaev, B.A., Padalko, V.N., Parzhitskii, S.S., Penkov, F.M., Philippov, A.V., Kaminskii, V.L., Tuleshev, Yu.Zh., and Wozniak, J.: Investigation of temperature dependence of neutron yield and electron screening potentials for d(d,n)3He reaction proceeding in deuterides ZrD2 and TiD2, Phys. Atomic Nuclei 75 (2012) 913-922.

1. Choudhury, R.K.: EPL 126 (2019) 12002.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Kobzev, A., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Kaminskii, V., Tuleushev, Y., Wozniak, J., :Measurement of astrophysical S factors and electron screening potentials for d(d,n)3He reaction in ZrD2, TiD2, D2D, and CD2 targets in the ultralow energy region using plasma accelerators. Phys. Atomic Nuclei 75 (2012) 53-62.

       1. Bagulya, A. V.:  Bull. Lebedev Phys. Inst. 39 (2012) 325.
2. Tsyganov, E.N.: Nuclear Instr. Methods in Phys. Res. B  355 (2015) 333.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Kobzev, A., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Kaminskii, V., Tuleushev, Y., Wozniak, J., :Measurement of astrophysical S-factors and electron screening potentials for View the MathML source reaction in ZrD2, TiD2 and TaD0.5 targets in the ultralow energy region using plasma accelerator. Nuclear Phys. A 889 (2012) 93-104.

1. Xu, Y.: Nuclear Phys. A 918 (2013) 61.
2. Coc, A.: Phys. Rev. D 92 (2015) 123526.
3. Tsyganov, E.N.: Nuclear Instr. Methods in Phys. Res. B  355 (2015) 333.
4. Choudhury, R.K.: EPL 126 (2019) 12002.

Valovič, A., Huran, J., Kučera, M., Kobzev, A., Gaži, Š., : Properties study of silicon carbide thin films prepared by electron cyclotron resonance plasma technology. European Phys. J. Applied Phys. 56 (2011) 24013.

       1. Omar, M.F.: IEEE 4th Inter. Conf. Photonics 2013, Art. no. 6687098, Pp 154.

Perný, M., Šály, V., Váry, M., and Huran, J.: Electrical and structural properties of amorphous silicon carbide and its application for photovoltaic heterostructures, Elektroenergetika 4 (2011) 17-19.

1. Tulic, S.: RSC Adv. 10 (2020) 8224.

Huran, J., Zaťko, B., Boháček, P., Shvetsov, V., Kobzev, A., : Study of wide band gap nanocrystalline silicon carbide films for radiation imaging detectors. Nuclear Instr. Methods Phys. Res. A 633 (2011) S75-S77. (APVV 0713-07).

           1. Jha, H.S.: J. Mater. Sci-Mater. Electron. 26 (2015) 1381.
#        2. Wan, M.:  Zhenkong Kexue yu Jishu Xuebao/J. Vacuum Sci Technol. 35 (2015) 424.

Zaťko, B., Dubecký, F., Boháček, P., Huran, J., Nečas, V., and Ryc, L.: Development and evaluation of semi-insulating GaAs detectors in hot plasmas diagnostics, Nuclear Instr. Methods Phys. Res. A 633 (2011) S131-S133.

1. Chernykh, S.V.: Instrum. Experimen. Techniq. 61 (2018) 665.
2. Gao, R.L.: Sci China-Phys. Mechan. Astron. 62 (2019) 122012.

Dubecký, F., Zaťko, B., Hubík, P., Gombia, E., Boháček, P., Huran, J., : A new kind of quasi-ohmic metallization in semi-insulating GaAs: Study of electrical characteristics. Nuclear Instr. and Methods in Phys. Res. A 607 (2009) 132-134.

  1. Leau W.: Applied Surface Sci 257 (2011) 7286.

Kobzev, A., Huran, J., Maczka, D., Turek, M.: Investigation of light element contents in subsurface layers of silicon. Vacuum 83 (2009) S124-S126.

1. Bystritsky, V.M.: Phys. Particles Nuclei Lett. 13 (2016) 98.
2. Bystritsky, V.M.: Nuclear Instr. Methods in Phys. Res. A 810 (2016) 80.
3. Bystritsky, V. M.: JETP Lett. 107 (2018) 665.
4. Bystritsky, V.M.: Nuclear Phys. A 990 (2019) 29.
5. Bystritsky, V.M.: EUROP. PHYS. J. A 56 (2020) 60.

Boháček, P., Huran, J., Kobzev, A., Balalykin, N., Petzold, J., : PECVD silicon carbon nitrid thin films: properties. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 291-294.

      1. Liu, X.: Ceramics Inter. 39 (2013) 3971.
2. Liu, X.: Ceramics Inter. 40 (2014) 5097.
3. Liu, Y.: Ceramics Inter. A 40 (2014) 15831.

Hotový, I., Huran, J., Spiess, L., Romanus, H., Capone, S., Řeháček, V., Taurino, A., Donoval, D., Siciliano, P., : Au-NiO nanocrystalline thin films for sensor application. J. Phys. Conf. Ser. 61 (2007) 435-439.

      1. Sahoo, P.: J. Solid State Chem. 190 (2012) 29.
2. Jegatha Christy, A.: Mater. Research Bull. 48 (2013) 4248.
#    3. Kumar, R.:  Lecture Notes in Electrical Engn. 268 (2014) LNEE, pp. 121.
4. Singh, A.: Chem. Phys. Lett. 646 (2016) 41.

Huran, J., Hotový, I., Balalykin, N., Starikov, A., : Physical and bonding characteristics of N-doped hydrogenated amorphous silicon carbide films grown by PECVD and annealed by pulsed electron beam J. Phys.: Conf. Ser. 61 (2007) 430-431.

     1. Jin, C.G.: Physica E 43 (2011) 1863.
2. Singh, A.V.: J. Micromech. Microengn. 22 (2012) 025010.
3. Kamakshi, K.: Plasmonics 10 (2015) 1211.

Huran, J., Hotový, I., Petzold, J., Balalykin, N., and Kobzev, A.: Effect of deposition temperature on the properties of amorphous silicon carbide thin films, Thin Solid Films 515 (2006) 651-653.

 1.Roumie, M.: Nuclear Instrum. Methods Phys. Res. B 260 (2007) 637.
#    2. Huang, J.: Acta Optica Sinica 28 (SUPPL. 2008), pp. 378.
3. Nam, S.H.: Nanotech Conference & Expo 2009, Vol 1, Technical Proc. – Nanotechnol. 2009: Fabrication, Particles, Character., MEMS, Electr. Photon. (2009) 452.
4. Kim, B.-H.: J. Nanosci Nanotechnol. 11 (2011) 7119.
5. Kim, S.Y.: Mater. Lett. 71 (2012) 74.
6. Medeiros, H. S.: ECS Trans. 49 (2012) 375.
7. Merazga, S.: Inter. J. Nanotechnol. 10 (2013) 587.
8. Rumyantsev, Yu.M.: Glass Phys. Chem. 44 (2018) 174.
9. Taysanoglu, T.: Thin Solid Films 674 (2019) 1.

Chromik, Š., Huran, J., Štrbik, V., Španková, M., Vávra, I., Bohne, W., Rohrich, J., Strub, E., Kováč, P., Stanček, S., : Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by an in situ method. Supercond. Sci Technol. 19 (2006) 577-580.

1. Mathur, S.: Zeit. Anorganische und Allgemeine Chemie 633 (2007) 2459.
2. Shimakage, H.: IEEE Trans. Applied Supercond. 17 (2007) 202.
3. Lee, T.G.: Physica C 468 (2008) 1888.
4. Jung, S.G.: Supercond. Sci. Technol. 22 (2009) 075010.
5. Sandu, V.: J. Supercond. Novel Magnet. 26 (2013) 361.
6. Orgiani, P.: J. Mater. Sci 49 (2014) 4108.
7. Gregor, M.: Applied Surface Sci 312 (2014) 97.
8. Putri, W.B.K.: Thin Solid Films 590 (2015) 80.
#   9. Ranot, M.: Progress in Supercond. Cryog. 17 (2015) 1.
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11. Gregor, M.: Applied Surface Sci 461 (2018) SI124.
12. Beckham, J. L.: J. Phys. D‏ 53 (2020) 205302.
13. Aji, L.B.B.: Thin Solid Films 710 (2020) 138260.

Hotový, I., Huran, J., Spiess, L., Romanus, H., Búc, D., Kosiba, R., : NiO-based nanostructured thin films with Pt surface modification for gas detection. Thin Solid Films 515 (2006) 658-661.

1. Brilis, N.: Thin Solid Films 515 (2007) 8484.
2. Mahaleh, Y.B.M.: J. Nanomater. 2008 (2008) 470595.
3. Rumiche, F.: Sensors Actuators B 134 (2008) 869.
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5. Steinebach, H.: Sensors Actuators B 151 (2010) 162.
6. Fasaki, I.: Applied Phys. A 107 (2012) 899.
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10. Fasaki, I.: Sensors Actuators B 176 (2013) 103.
11. Saravanakumar, S.: Chem. Pap. 68 (2014) 788.
12. Farag, A.A.M.: Polyhedron 71 (2014) 75.
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16. Horak, P.: NANOCON 2014. TANGER (2015) 469.
    17. Jamal, R.K.: Photonic Sensors 5 (2015) 235.
18. Rusi, S.R.Majid: Electrochimica Acta 175 (2015) 193.
19. Grilli, M.L.: Superlatt. Microstr. 100 (2016) 924.
20. Nwidee, L.N.: J. Petroleum Sci Engn.149 (2017) 782.
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22. Tan, W.: Sensors Actuators B 256 (2018) 282.
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24. Mezher, S.J.: Vacuum 172 (2020) UNSP 109074.
25. Sheena, P.A.: J. Mater. Sci-Mater. Electron. 31 (2020) 5769.
26. Do, J.Y.: ACS Sustain. Chem. Engn.‏ 8 (2020)‏ 18646.
27. Choi, K.: J. Korean Phys. Soc 77 (2020) 482.

Huran, J., Hotový, I., Petzold, J., Balalykin, N.I., and Kobzev, A.P.: RF plasma deposition of thin amorphous silicon carbide films using a combination of silan and methane. In: ASDAM 2006. Proc. 6th Int. Conf. on Advanced Semiconductor Devices and Microsystems. Eds. J. Breza., D. Donoval, E. Vavrinský. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 59-62.

1. Fares, C.: Materials 13 (2020) 3321.
2. Camargo, S.E.A.: J. Funct. Biomater. 11 (2020) 33.
3. Fares, C.: Materials 13 (2020) 2375.

Huran, J., Zaťko, B., Hotový, I., Petzold, J., Kobzev, A., Balalykin, N., : PECVD silicon carbide deposited at different temperatures Czechoslov. J. Phys. B 56 (2006) S1207-S1211.

1. Hong, R.D.: Spectroscopy Lett. 43 (2010) 298.
2. Cheng, C.-H.: IEEE Photonics J. 4 (2012) 1762.

Dubecký, F., Šagátová-Perďochová, A., Ščepko, P., Zaťko, B., Sekerka, V., Nečas, V., Sekáčová, M., Hudec, M., Boháček, P., and Huran, J.: Digital X-ray portable scanner based on monolithic semi-insulating GaAs detectors: General description and first “quantum” images, Nuclear Instr. and Methods in Phys. Res. A 546 (2005) 118-124.

1. Iacobaeus, C.: IEEE Trans. Nuclear Sci 53 (2006) 554.
2. Zentai, G.: Proc. 2007 IEEE Inter. Workshop on Imaging Systems Techniques art. no. 4258788.
3. Jackson, J.B.: Measurement Sci Technol. 20 (2009) 075502.
*     4. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.
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Dubecký, F., Ščepko, P., Loukas, D., Zaťko, B., Sekerka, V., Nečas, V., Šagátová-Perďochová, A., Sekáčová, M., Boháček, P., Hudec, M., Huran, J., : Application of monolithic strip line radiation detector based on semi-insulating GaAs in X-ray portable scanner. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 314-320.

      1. Pino, R.: J. Crystal Growth 290 (2006) 29.
2. Zwerger, A.: Nuclear Instr. Methods A 576 (2007) 23.
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Hotový, I., Huran, J., Siciliano, P., Capone, S., Spiess, L., and Řeháček, V.: Enhancement of H2 sensing properties of NiO-based thin films with a Pt surface modification. Sensors & Actuators B 103 (2004) 300-311.

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