Ing. Huran Jozef, CSc.

Huran, J., Balalykin, N.I., Sasinková, V., Kleinová, A., Nozdrin, M.A., Kobzev, A.P., and Kováčová, E.: Very thin N-doped nanostructured carbon films on quartz and sapphire substrate: Photoelectron emission properties, Thin Solid Films 709 (2020) 138200.

1. Bokov, D.O.: Molecul. Simul. 48 (2022) 438.

Perný, M., Šály, V., Janíček, F., Mikolášek, M., Váry, M., and Huran, J.: Electric measurements of PV heterojunction structures a-SiC/c-Si, J. Electr. Engn. 69 (2018) 52-57.

1. Cibira, G.: Adv. Electr. Electron. Engn. 19 (2021) 179.

Huran, J., Mikolášek, M., Perný, M., Šály, V., Kleinová, A., Sasinková, V., Kobzev, A.P., and Arbet, J.: HWCVD of B-doped silicon carbide thin films for SHJ solar cell technology, J. Integrated Ferroelectr. 184 (2017) 23-31.

1. Sun, X.L.: J. Alloys Comp. 905 (2022) 164062.

Šály, V., Perný, M., Janíček, F., Huran, J., Mikolášek, M., and Packa, J.: Impedance spectroscopy of heterojunction solar cell a-SiC/c-Si with ITO antireflection film investigated at different temperatures, J. Phys.: Conf. Ser. 829 (2017) 012019.

#       1. Wang, C.: Kuei Suan Jen Hsueh Pao/J. Chinese Ceramic Soc 45 (2017) 1555.
2. Seba, H.Y.: Thin Solid Films 699 (2020) 137891.

Bystritsky, V.M., Dudkin, G.N., Filipowicz, M., Huran, J., Krylov, A.R., Nechaev, B.A., Padalko, V.N., Penkov, F.M., Philippov, A.V., and Tuleushev, Yu.Zh.: Effect of pd and dd reactions enhancement in deuterides TiD2, ZrD2 and Ta2D in the astrophysical energy range, Phys. Particles Nuclei Lett. 13 (2016) 79-97.

1. Steinetz, B.M.: Phys. Rev. C 101 (2020) 044610.
2. Freire, L.O.: Fusion Sci Technol. 78 (2022) 259.

Balalykin N. I., Huran,  J., Nozdrin, M.A., Feshchenko, A.A., Kobzev, A.P., and Sasinková, V.: Transmission photocathodes based on stainless steel mesh and quartz glass coated with n doped DLC thin films prepared by reactive magnetron sputtering, J. Phys.:Conf. Ser. 700 (2016) 012050.

1. Liu, L.: Applied Phys. A 125 (2019) 366.

Perný, M., Šály, V., Mikolášek, M., Váry, M., and Huran, J.: Solar cell heterojunction a-SiC:H/c-Si structure under dark and illumination. In: Proc. 16th Inter. Sci Conf. on Electric Power Engn. (EPE). Eds. S. Rusek and R. Gono. Ostrava: VSB-TU 2015. ISBN: 978-1-4673-6788-2. P. 672-675.

1. Olayiwola, O.I.: IEEE Energy Conversion Congress and Exposition 2017. P. 2310.

Huran,  J., Hrubčín, L., Boháček, P., Borzakov, S.B., Skuratov, V.A., Kobzev, A.P., Kleinová, A., and Sasinková, V.: The effect of xe ion and neutron irradiation on the properties of SiC and SiC(N) film prepared by PECVD technology. In: RAD Proc. Ed. G. Ristič. Niš: RAD Ass. 2015. ISBN: 978-86-80300-01-6. P. 399-403.

1. Su, Q.: Acta Materialia 165 (2019) 587.

Sasinková, V., Huran,  J., Kleinová, A., Boháček, P., Arbet, J., and Sekáčová, M.: Raman spectroscopy study of SiC thin films prepared by PECVD for solar cell working in hard environment, Proc. SPIE 9563 (2015) 95630V.

1. de Obaldia, E.I.:Applied Sci-Basel 11 (2021) 3990.

Bystritsky, V.M., Gaži, Š., Huran, J., Dudkin, G.N., Krylov, A.R., Lysakov, A.S., Nechaev, B.A., Padalko, V.N., Sadovsky, A.B., Filipowicz, M., and Philippov, A.V.: Studying the D(p, ᵧ)3He reaction in zirconium deuteride within the proton energy range of 9-35 keV, Phys. Particles Nuclei Lett. 12 (2015) 550-558.

1. Moscoso, J.: Astrophys. J. 923 (2021) 49.

Kleinová, A., Huran,  J., Sasinková, V., Perný, M.,  Šály, V., and Packa, J.: FTIR spectroscopy of silicon carbide thin films prepared by PECVD technology for solar cell application, Proc. SPIE 9563 (2015) 95630U.

#      1. Khan, S.: Inter. IEEE/EMBS Conf. Neural Engn. 2017, NER 8008337, pp. 247.
2. Quang Hung T.: HELIYON 4 (2018) e00522.
3. Jurkeviciute, A.: Adv. Engn. Mater. (2020) 1900951.
4. Jeon, I.K.: Powder Technol. 359 (2020) 181.
5. Truong, T.B.: Electrochim. Acta 365 (2021) 137287.
6. Wang, Z.: ACS Applied Mater. Interfac. 13 (2021) 32126.
7. de Obaldia, E.I.:Applied Sci-Basel 11 (2021) 3990.
8. Roh, H.: Applied Surface Sci A 571 (2022) 151231.
9. Filatov, Y.D.: J. Superhard Mater. 43 (2021) 435.
10. Purvis, G.: ICARUS 375 (2022) 114827.
11. Filatov, Y.D.: J. Superhard Mater. 44 (2022) 37.

Perný, M., Huran, J., Šály, V., Váry, J., Packa, J., and Kobzev, A.P.: Electrical and structural characterization of carbon based films prepared by RF-PECVD and ECR-PECVD techniques for photovoltaic applications, J. Optoelectr. Adv. Mater. 16 (2014) 306-310.

1. Power, A.C.: Nanotechnol. Rev. 7 (2018) 19.

Perný, M., Šály, V., Váry, M., Mikolášek, M., Huran, J., and Packa, J.: AC impedance spectroscopy of Al/a-SiC/c-Si(p)/Al heterostructure under illumination, J. Electr. Engn. 65 (2014) 174-178.

 1. Panigrahi, J.: Solar Energy 136 (2016) 412.
2. Nawar, A.M.: J. Alloys Comp. 767 (2018) 1271.
3. Edgar, C.J.: J. Prev. Alzheimers Dis.6 (2019) 223.
4. Mabunda, N.E.: Energies 12 (2019) 2811.
5. Seba, H.Y.: Thin Solid Films 699 (2020) 137891.
6. Carmen Mejia, M. del.: J. Phys. D 54 (2021) 195101.
7. Mejia, M.D.:Mater. Sci Semicond. Process. 143 (2022) 106474.

Bystritsky, V.M., Bystritskii, Vit.M., Dudkin, G.N., Filipowicz, M., Gaži, Š., Huran, J., Nechaev, B.A., Padalko, V.N., Parzhitskii, S.S., Penkov, F.M., Philippov, A.V., and Tuleshev, Yu.Zh.: First experimental evidence of D(p, ᵧ)3He reaction in deuteride titanium in ultralow collision energy region, Nuclear Instr. Methods Phys. Res. A 753 (2014) 91-96.

1. Bagulya, A. V.: Phys. Particl. Nuclei 48 (2017) 691.
2. Moscoso, J.: Astrophys. J. 923 (2021) 49.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Tuleushev, Y., : Effect of the crystal structure of a deuterated target on the yield of neutrons in the dd reaction at ultralow energies. JETP Lett. 99 (2014) 497-502.

       1. Molodets, A.M.: Phys. Solid State 56 (2014) 2524.
2. Bagulya, A.V.: J. Surface Invest. 11 (2017) 58.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Tuleushev, Y., Varlachov, V., : Experimental verification of hypothesis of dd reaction enhancement by channeling of deuterons in titanium deuteride at ultralow energies,. Nuclear Instr. Methods Phys. Res. A 764 (2014) 42-47.

1. Bagulya, A.V.: Nuclear Instr. Methods in Phys. Res. B  402 (2017) 243.
2. Bagulya, A. V.: Phys. Particl. Nuclei 48 (2017) 691.
3. Choudhury, R.K.: EPL 126 (2019) 12002.
4. Schenkel, T.: J. Applied Phys. 126 (2019) 203302.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Tuleushev, Y., : First experimental evidence of D(p, ᵧ)3He reaction in titanium deuteride in ultralow collision energy region,. J. Experiment. Theoret. Phys. 119 (2014) 54-62.

       1. Bagulya, A.V.: J. Surface Invest. 11 (2017) 58.

Bystritsky, V., Kobzev, A., Krylov, A., Parzhitskii, S., Philippov, A., Dudkin, G., Nechaev, B., Padalko, V., Penkov, F., Tuleushev, Y., Filipowicz, M., Bystritsky, V., Gaži, Š., Huran, J., : Study of the d(p, ᵧ)3He reaction at ultralow energies using a zirconium deuteride target,. Nuclear Instr. Methods Phys. Res. A 737 (2014) 248-252.

1. Purcell, J.E.: Nuclear Data Sheets 130 (2015) 1.
2. Bagulya, A. V.: Phys. Particl. Nuclei 48 (2017) 691.
3. Moscoso, J.: Astrophys. J. 923 (2021) 49.

Huran, J., Boháček, P., Shvetsov, V., Kobzev, A., Kleinová, A., Sasinková, V., Balalykin, N., Sekáčová, M., and Arbet, J. : Amorphous silicon carbide thin films deposited by plasma enhanced chemical vapor deposition at different temperature for hard environment applications. In: 21st Inter. Symp. Plasma Chemistry. Cairns (Australia) 2013. Výveska.

 1. Marvi, Z.: RSC Adv. 7 (2017) 19189.
2. van Laar, J. H.: J. Europ. Ceramic Soc 38 (2018) 1197.
3. Lukianov, A.N.: J. Alloys Compounds 801 (2019) 285.

Perný, M., Mikolášek, M., Šály, V., Ružinský, M., Ďurman, V., Pavúk, M., Huran, J., Országh, J., Matejčík, Š., :Behaviour of amorphous silicon carbide in Au/a-SiC/Si heterostructures prepared by PECVD technology using two different RF modes,. Applied Surface Sci 267 (2013) 143-147.

1. Leal, G.: Mater. Res.-Ibero-American J. Mater. 17 (2014) 472.
2. Drinek, V.: Applied Surface Sci 292 (2014) 413.
#    3. Campos, T.M.B.: Mater. Research 17 (2014) 472.
4. Barbouche, M.: Inter. J. Adv. Manufact. Technol. 106 (2020) 731.

Huran, J., Boháček, P., Shvetsov, V., Kobzev, A., Kleinová, A., Borzakov, S., Hrubčín, L., Sekáčová, M., and Balalykin, N.: Neutron-irradation effect on the electrical chracteristics of amorphous silicon carbide and nitrogen-doped silicon carbide films prepared by PECVD technology, Phys. Status Solidi a 210 (2013) 2756-2761.

  1. Mutch, M.J.: Microelectron. Reliab. 63 (2016) 201.
2. Wei, J.: Ceramics Inter. 44 (2018) 20375.|
3. Su, Q.: Acta Materialia 165 (2019) 587.

Huran, J., Valovič, A., Boháček, P., Shvetsov, V., Kobzev, A., Borzakov, S., Kleinová, A., Sekáčová, M., Arbet, J., and Sasinková, V.: The effect of neutron irradiation on the properties of SiC and SiC(N) layer prepared by plasma enhanced chemical vapor deposition, Applied Surface Sci 267 (2013) 88-91.

1. El Khalfi, A.: Spectroscopy Lett. 47 (2014) SI392.
2. Wang, B.: Nanoscale 7 (2015) 14489.
3. Wang, R.: Plasma Process. Polym. 14 (2017) e1600248.
#     4. Baskar, S.: Inter. J. Mechan. Engn. Technol. 8 (2017) 250.
5. Baskar, S.: J. Surface Sci Technol. 34 (2018) 116.
6. Yoshimura, S.: Nuclear Instr. Methods in Phys. Res. B 430 (2018) 1.
7. Su, Q.: Acta Materialia 165 (2019) 587.
8. Baskar, S.: Adv. Mater. Process. Technol. 5 (2019) 438.
9. Baskar, S.: J. Surface Sci Technol. 35 (2019) 107.
#  10. Baskar, S.: Inter. J. Engn. Adv. Technol. 8 (2019) 787.
11. Mirzayev, M.N.: Physica B 611 (2021) 412842.
12. Yoshimura, S.: PLOS One 16 (2021) 0259216.

Huran, J., Valovič, A., Kobzev, A., Balalykin, N., Kučera, M., Haščík, Š., Malinovsky, L., and Kováčová, E.: Stuctural and physical characteristics of PECVD nanocrystalline silicon carbide thin films. Phys. Procedia 32 (2012) 303-307.

#   1. Wan, M.: Zhenkong Kexue yu Jishu Xuebao/J. Vacuum Sci Technol. 35 (2015) 424.

Huran, J., Valovič, A., Kučera, M., Kleinová, A., Kováčová, E., Boháček, P., and Sekáčová, M.: Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: properties, J. Electr. Engn. 65 (2012) 333-335.

1. Gangopadhyay, U.: J. Renewable Sustainable Energy 5 (2013) 031607.
2. Ivashchenko, V.I.: Thin Solid Films 569 (2014) 57.
#   3. Kozak, A.O.: J. Nano- and Electron. Phys. 6 (2014) 04047.
4. Fainer, N. I.: J. Struct. Chem. 56 (2015) 163.
5. Fainer, N. I.: ECS J. Solid State Sci Technol. 4 (2015) SIN3153.
6. Haacke, M.: Europ. Phys. J.-Special Top. 224 (2015) 1935.
7. Porada, O. K.: J. Superhard Mater. 38 (2016) 263.
8. Khatami, Z.: Thin Solid Films 622 (2017) 1.
9. Fainer, N. I.: J. Struct. Chem. 58 (2017) 119.
10. Porada, O. K.: J. Nano- Electron. Phys. 9 (2017) 02022.
11. Fainer, N.I.: Glass Phys. Chem. 43 (2017) 410.
12. He, W.: J. Ceramic Soc Japan 126 (2018) 253.
13. Khatami, Z.: J. Luminesc.196 (2018) 504.
14. Khatami, Z.: ECS J. Solid State Sci Technol. 7 (2018) N7.
15. Fainer, N.I.: Glass Phys. Chem. 44 (2018) 607.
16. Porada, O. K.: J. Superhard Mater. 41 (2019) 32.
17. Sukach, A.V.: J. Non-Crystall. Solids 523 (2019) UNSP 119603.
18. Fainer, N.I.: J. Struct. Chem.‏ 61 (2020) 1865.
19. Ivashchenko, V.I.: Inter. J. Hydrogen Energy 47 (2022) 7263.
20. Sukach, A.V.:Mater. Sci Semicond. Process. 143(2022) 106515.

Huran, J., Balalykin, N., Shirkov, G., Boháček, P., Kobzev, A., Valovič, A., Malinovsky, L., Sekáčová, M., :Characterization of nanocrystalline diamond/amorphous composite carbon films prepared by PECVD technology. Phys. Procedia 32 (2012) 875-879.

         1. Zhang, X.: J. Applied Phys. 115 (2014) 063508.

Bystritsky, V.M., Bystritskii, Vit.M., Dudkin, G.N., Filipowicz, M., Gaži, Š., Huran, J., Kobzev, A.P., Mesyats, G.A., Nechaev, B.A., Padalko, V.N., Parzhitskii, S.S., Penkov, F.M., Philippov, A.V., Kaminskii, V.L., Tuleshev, Yu.Zh., and Wozniak, J.: Investigation of temperature dependence of neutron yield and electron screening potentials for d(d,n)3He reaction proceeding in deuterides ZrD2 and TiD2, Phys. Atomic Nuclei 75 (2012) 913-922.

1. Choudhury, R.K.: EPL 126 (2019) 12002.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Kobzev, A., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Kaminskii, V., Tuleushev, Y., Wozniak, J., :Measurement of astrophysical S factors and electron screening potentials for d(d,n)3He reaction in ZrD2, TiD2, D2D, and CD2 targets in the ultralow energy region using plasma accelerators. Phys. Atomic Nuclei 75 (2012) 53-62.

       1. Bagulya, A. V.:  Bull. Lebedev Phys. Inst. 39 (2012) 325.
2. Tsyganov, E.N.: Nuclear Instr. Methods in Phys. Res. B  355 (2015) 333.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Kobzev, A., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Kaminskii, V., Tuleushev, Y., Wozniak, J., :Measurement of astrophysical S-factors and electron screening potentials for View the MathML source reaction in ZrD2, TiD2 and TaD0.5 targets in the ultralow energy region using plasma accelerator. Nuclear Phys. A 889 (2012) 93-104.

1. Xu, Y.: Nuclear Phys. A 918 (2013) 61.
2. Coc, A.: Phys. Rev. D 92 (2015) 123526.
3. Tsyganov, E.N.: Nuclear Instr. Methods in Phys. Res. B  355 (2015) 333.
4. Choudhury, R.K.: EPL 126 (2019) 12002.

Valovič, A., Huran, J., Kučera, M., Kobzev, A., Gaži, Š., : Properties study of silicon carbide thin films prepared by electron cyclotron resonance plasma technology. European Phys. J. Applied Phys. 56 (2011) 24013.

       1. Omar, M.F.: IEEE 4th Inter. Conf. Photonics 2013, Art. no. 6687098, Pp 154.

Perný, M., Šály, V., Váry, M., and Huran, J.: Electrical and structural properties of amorphous silicon carbide and its application for photovoltaic heterostructures, Elektroenergetika 4 (2011) 17-19.

1. Tulic, S.: RSC Adv. 10 (2020) 8224.
2. Sukach, A.V.: Mater. Sci Semicond. Process. 143 (2022) 106515.

Huran, J., Zaťko, B., Boháček, P., Shvetsov, V., Kobzev, A., : Study of wide band gap nanocrystalline silicon carbide films for radiation imaging detectors. Nuclear Instr. Methods Phys. Res. A 633 (2011) S75-S77.

1. Jha, H.S.: J. Mater. Sci-Mater. Electron. 26 (2015) 1381.
#        2. Wan, M.:  Zhenkong Kexue yu Jishu Xuebao/J. Vacuum Sci Technol. 35 (2015) 424.
3. Ermakova, E.: J. Organometall. Chem. 958 (2022) 122183.

Zaťko, B., Dubecký, F., Boháček, P., Huran, J., Nečas, V., and Ryc, L.: Development and evaluation of semi-insulating GaAs detectors in hot plasmas diagnostics, Nuclear Instr. Methods Phys. Res. A 633 (2011) S131-S133.

1. Chernykh, S.V.: Instrum. Experimen. Techniq. 61 (2018) 665.
2. Gao, R.L.: Sci China-Phys. Mechan. Astron. 62 (2019) 122012.

Dubecký, F., Zaťko, B., Hubík, P., Gombia, E., Boháček, P., Huran, J., : A new kind of quasi-ohmic metallization in semi-insulating GaAs: Study of electrical characteristics. Nuclear Instr. and Methods in Phys. Res. A 607 (2009) 132-134.

  1. Leau W.: Applied Surface Sci 257 (2011) 7286.

Kobzev, A., Huran, J., Maczka, D., Turek, M.: Investigation of light element contents in subsurface layers of silicon. Vacuum 83 (2009) S124-S126.

1. Bystritsky, V.M.: Phys. Particles Nuclei Lett. 13 (2016) 98.
2. Bystritsky, V.M.: Nuclear Instr. Methods in Phys. Res. A 810 (2016) 80.
3. Bystritsky, V. M.: JETP Lett. 107 (2018) 665.
4. Bystritsky, V.M.: Nuclear Phys. A 990 (2019) 29.
5. Bystritsky, V.M.: Europ. Phys. J. A 56 (2020) 60.
6. Bystritsky, V.M.: Inter. J. Modern Phys. E 30 (2021) 2150045.

Boháček, P., Huran, J., Kobzev, A., Balalykin, N., Petzold, J., : PECVD silicon carbon nitrid thin films: properties. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 291-294.

      1. Liu, X.: Ceramics Inter. 39 (2013) 3971.
2. Liu, X.: Ceramics Inter. 40 (2014) 5097.
3. Liu, Y.: Ceramics Inter. A 40 (2014) 15831.

Hotový, I., Huran, J., Spiess, L., Romanus, H., Capone, S., Řeháček, V., Taurino, A., Donoval, D., Siciliano, P., : Au-NiO nanocrystalline thin films for sensor application. J. Phys. Conf. Ser. 61 (2007) 435-439.

 1. Sahoo, P.: J. Solid State Chem. 190 (2012) 29.
2. Jegatha Christy, A.: Mater. Research Bull. 48 (2013) 4248.
#    3. Kumar, R.:  Lecture Notes in Electrical Engn. 268 (2014) LNEE, pp. 121.
4. Singh, A.: Chem. Phys. Lett. 646 (2016) 41.
5. Mohammed, B.K.: J. Sol-Gel Sci Technol. 99 (2021) 1.

Huran, J., Hotový, I., Balalykin, N., Starikov, A., : Physical and bonding characteristics of N-doped hydrogenated amorphous silicon carbide films grown by PECVD and annealed by pulsed electron beam J. Phys.: Conf. Ser. 61 (2007) 430-431.

1. Jin, C.G.: Physica E 43 (2011) 1863.
2. Singh, A.V.: J. Micromech. Microengn. 22 (2012) 025010.
3. Kamakshi, K.: Plasmonics 10 (2015) 1211.
4. Wang, C.: Ceramics Inter. 48 (2022) 632.

Huran, J., Hotový, I., Petzold, J., Balalykin, N., and Kobzev, A.: Effect of deposition temperature on the properties of amorphous silicon carbide thin films, Thin Solid Films 515 (2006) 651-653.

 1.Roumie, M.: Nuclear Instrum. Methods Phys. Res. B 260 (2007) 637.
#    2. Huang, J.: Acta Optica Sinica 28 (SUPPL. 2008), pp. 378.
3. Nam, S.H.: Nanotech Conference & Expo 2009, Vol 1, Technical Proc. – Nanotechnol. 2009: Fabrication, Particles, Character., MEMS, Electr. Photon. (2009) 452.
4. Kim, B.-H.: J. Nanosci Nanotechnol. 11 (2011) 7119.
5. Kim, S.Y.: Mater. Lett. 71 (2012) 74.
6. Medeiros, H. S.: ECS Trans. 49 (2012) 375.
7. Merazga, S.: Inter. J. Nanotechnol. 10 (2013) 587.
8. Rumyantsev, Yu.M.: Glass Phys. Chem. 44 (2018) 174.
9. Taysanoglu, T.: Thin Solid Films 674 (2019) 1.

Chromik, Š., Huran, J., Štrbik, V., Španková, M., Vávra, I., Bohne, W., Rohrich, J., Strub, E., Kováč, P., Stanček, S., : Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by an in situ method. Supercond. Sci Technol. 19 (2006) 577-580.

1. Mathur, S.: Zeit. Anorganische und Allgemeine Chemie 633 (2007) 2459.
2. Shimakage, H.: IEEE Trans. Applied Supercond. 17 (2007) 202.
3. Lee, T.G.: Physica C 468 (2008) 1888.
4. Jung, S.G.: Supercond. Sci. Technol. 22 (2009) 075010.
5. Sandu, V.: J. Supercond. Novel Magnet. 26 (2013) 361.
6. Orgiani, P.: J. Mater. Sci 49 (2014) 4108.
7. Gregor, M.: Applied Surface Sci 312 (2014) 97.
8. Putri, W.B.K.: Thin Solid Films 590 (2015) 80.
#   9. Ranot, M.: Progress in Supercond. Cryog. 17 (2015) 1.
10. Baker, A.A.: Supercond. Sci Technol. 31 (2018) 055006.
11. Gregor, M.: Applied Surface Sci 461 (2018) SI124.
12. Beckham, J. L.: J. Phys. D‏ 53 (2020) 205302.
13. Aji, L.B.B.: Thin Solid Films 710 (2020) 138260.

Hotový, I., Huran, J., Spiess, L., Romanus, H., Búc, D., Kosiba, R., : NiO-based nanostructured thin films with Pt surface modification for gas detection. Thin Solid Films 515 (2006) 658-661.

1. Brilis, N.: Thin Solid Films 515 (2007) 8484.
2. Mahaleh, Y.B.M.: J. Nanomater. 2008 (2008) 470595.
3. Rumiche, F.: Sensors Actuators B 134 (2008) 869.
4. Qureshi, A.: Sensors Actuators B 138 (2009) 71.
5. Steinebach, H.: Sensors Actuators B 151 (2010) 162.
6. Fasaki, I.: Applied Phys. A 107 (2012) 899.
7. Kim, H.-J.: Sensors Actuators B 171 (2012) 1029.
#    8. Ashok, K.: J. Nano- and Electronic Phys. 4 (2012) 04002.
#    9. Mathiyan, J.: J. Applied Sci 12 (2012) 1686.
10. Fasaki, I.: Sensors Actuators B 176 (2013) 103.
11. Saravanakumar, S.: Chem. Pap. 68 (2014) 788.
12. Farag, A.A.M.: Polyhedron 71 (2014) 75.
    13. Shaaban, E.R.: J. Alloys Comp. 613 (2014) 324.
    14. Sta, I.: J. Alloys Comp. 626 (2015) 87.
    15. Chou, P.-C.: Inter. J. Hydrogen Energy 40 (2015) 729.
16. Horak, P.: NANOCON 2014. TANGER (2015) 469.
    17. Jamal, R.K.: Photonic Sensors 5 (2015) 235.
18. Rusi, S.R.Majid: Electrochimica Acta 175 (2015) 193.
19. Grilli, M.L.: Superlatt. Microstr. 100 (2016) 924.
20. Nwidee, L.N.: J. Petroleum Sci Engn.149 (2017) 782.
#  21. Gagaoudakis, E.: Sensor Lett. 15 (2017) 663.
22. Tan, W.: Sensors Actuators B 256 (2018) 282.
23. Abdulrasheed, A. A.: J. CO2 Utiliz. 37 (2020) 230.
24. Mezher, S.J.: Vacuum 172 (2020) UNSP 109074.
25. Sheena, P.A.: J. Mater. Sci-Mater. Electron. 31 (2020) 5769.
26. Do, J.Y.: ACS Sustain. Chem. Engn.‏ 8 (2020)‏ 18646.
27. Choi, K.: J. Korean Phys. Soc 77 (2020) 482.
28. Meng, X.: Physica Scripta 96 (2021) 075806.

Huran, J., Hotový, I., Petzold, J., Balalykin, N.I., and Kobzev, A.P.: RF plasma deposition of thin amorphous silicon carbide films using a combination of silan and methane. In: ASDAM 2006. Proc. 6th Int. Conf. on Advanced Semiconductor Devices and Microsystems. Eds. J. Breza., D. Donoval, E. Vavrinský. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 59-62.

1. Fares, C.: Materials 13 (2020) 3321.
2. Camargo, S.E.A.: J. Funct. Biomater. 11 (2020) 33.
3. Fares, C.: Materials 13 (2020) 2375.

Huran, J., Zaťko, B., Hotový, I., Petzold, J., Kobzev, A., Balalykin, N., : PECVD silicon carbide deposited at different temperatures Czechoslov. J. Phys. B 56 (2006) S1207-S1211.

1. Hong, R.D.: Spectroscopy Lett. 43 (2010) 298.
2. Cheng, C.-H.: IEEE Photonics J. 4 (2012) 1762.

Dubecký, F., Šagátová-Perďochová, A., Ščepko, P., Zaťko, B., Sekerka, V., Nečas, V., Sekáčová, M., Hudec, M., Boháček, P., and Huran, J.: Digital X-ray portable scanner based on monolithic semi-insulating GaAs detectors: General description and first “quantum” images, Nuclear Instr. and Methods in Phys. Res. A 546 (2005) 118-124.

1. Iacobaeus, C.: IEEE Trans. Nuclear Sci 53 (2006) 554.
2. Zentai, G.: Proc. 2007 IEEE Inter. Workshop on Imaging Systems Techniques art. no. 4258788.
3. Jackson, J.B.: Measurement Sci Technol. 20 (2009) 075502.
*     4. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.
#     5. Prokopyev, D.G.: Proc. IFOST 2012 (2012) art. no. 6357750.
6. Veale, M. C.: Nuclear Instrum. Methods in Phys. Res. A 752 (2014) 6.
7. Turkington, G.: Nuclear Instr. Methods in Phys. Res. A 911 (2018) 55.

Dubecký, F., Ščepko, P., Loukas, D., Zaťko, B., Sekerka, V., Nečas, V., Šagátová-Perďochová, A., Sekáčová, M., Boháček, P., Hudec, M., Huran, J., : Application of monolithic strip line radiation detector based on semi-insulating GaAs in X-ray portable scanner. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 314-320.

      1. Pino, R.: J. Crystal Growth 290 (2006) 29.
2. Zwerger, A.: Nuclear Instr. Methods A 576 (2007) 23.
*     3. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.

Hotový, I., Huran, J., Siciliano, P., Capone, S., Spiess, L., and Řeháček, V.: Enhancement of H2 sensing properties of NiO-based thin films with a Pt surface modification. Sensors & Actuators B 103 (2004) 300-311.

1. Hazra, S.K.: Sensor Lett. 3 (2005) 179.
2. Lei, W.: ICEMI 2005: 5 (2005) 531.
3. Pino, R.: J. Crystal Growth 290 (2006) 29.
4. Pandis, C.: IEEE Sensors J. 7 (2007) 448.
5. Agnoli, S.: J. Phys. Chemistry C 111 (2007) 3736.
6. Palacin, S.: Applied Surface Sci 254 (2007) 278.
7. Brilis, N.: Thin Solid Films 515 (2007) 8484.
8. Thuwachaowsoan, K.: Materials Sci Engn. B 140 (2007) 23.
9. Stamataki, M.: Phys. Status Solidi A 205 (2008) 2064.
10. Wisitsmat, A.: Thin Solid Films 517 (2009) 2775.
11. Han, N.: J. Nanosci Nanotechnol. 9 (2009) 1346.
12. Qureshi, A.: Sensors Actuators B 138 (2009) 71.
13. Luyo, C.: Sensors Actuators B 138 (2009) 14.
14. Stamataki, M.: Thin Solid Films 518 (2009) 1326.
15. Wang, Z.J.: J. Phys. Chem. C 114 (2010) 6100.
16. Della Gaspera, E.: Sensors Actuators B 143 (2010) 567.
17. Jang, W.L.: J. European Ceramic Soc 30 (2010) 503.
18. Steinebach, H.: Sensors Actuators B 151 (2010) 162.
19. Mousdis, G.A.: Nanotechnol. Basis Adv. Sensors (2010) 401.
20. Su, P.G.: Sensors Actuators B 157 (2011) 275.
21. Liu, B.: Sensors Actuators B 156 (2011) 251.
22. Iliadis, A.A.: IEEE Trans. Nanotechnol. 10 (2011) 652.
23. Fu, X.: Advanced Mater. Research 228-229 (2011) 34.
24. Song, X.: J. Phys. Chem. C 115 (2011) 21730.
25. Della Gaspera, E.: J. Sol-Gel Sci Technol. 60 (2011) 366.
26. Della Gaspera, E.: Materials Chem. Phys. 131 (2011) 313.
27. Zhao, J.: Sensors Actuators B 160 (2011) 604.
28. Zeng, W.: Sensors Actuators B 160 (2011) 455.
#    29. Mousdis, G.A.: NATO Sci Peace Security B (2011)  401.
#    30. Fu, X.: Advanced Mater. Research 228-229 (2011) 34.
#    31. Guo, Q.-S.: Cailiao Kexue yu Gongyi/Mater. Sci Technol. 19 (2011) 47.
32. Dakhel, A.A.: J. Non-Crystall. Solids 358  (2012) 285.
33. Fasaki, I.: Applied Phys. A 107 (2012) 899.
34. Della Gaspera, E.: Sensors Actuators B 164 (2012) 54.
35. Soleimanpour, A.M.: Mater. Sci Engn. C 32 (2012) 2230.
36. Wang, B.: ACS Applied Mater. Interfac. 4 (2012) 5691.
37. Wang, L.: Sensors Actuators B 171 (2012) 1180.
#    38.  Della Gaspera, E.: Mater. Res. Soc Symp. Proc. 1449 (2012) 127.
#    39. Ashok, K.: J. Nano- and Electronic Phys. 4 (2012) 04002.
40. Lin, L.: Mater. Res. Bull. 48 (2013) 449.
41. Wu C.-C.: Nanoscale Res. Lett. 8 (2013) 33.
42. Soleimanpour, A.M.: Sensors Actuators B 182 (2013) 125.
43. Garduno-Wilches, I.: Inter. J. Hydrogen Energy 38 (2013) 4213.
44. Fasaki, I.: Sensors Actuators B 176 (2013) 103.
45. Alver, U.: Inter. J. Minerals, Metall. Mater. 20 (2013) 1097.
46. Chen, W.: Nanosci Nanotechnol. Lett. 5 (2013) 1231.
47. Yoon, J.-W.: Nanotechnol. 24 (2013) 444005.
48. Archanjo, B.S.: Adv. Mater. Sci Engn. (2013) 898565.
49. Wu, C.-C.: Nanoscale Res. Lett. 8 (2013) 33.
50. Reddy, A.K.Y.: J. Alloys Comp. 583 (2014) 396.
51. Reddy, A.K.Y.: Sci Adv. Mater. 6 (2014) 178.
52. Kandyla, M.: Mater. Research Bull. 49 (2014) 552.
53. Krunks, M.: Vacuum 107 (2014) SI242.
54. Kandyla, M.: Mater. Lett. 119 (2014) 51.
55. Shaaban, E.R.: J. Alloys Comp. 613 (2014) 324.
56. Wang, J.: Phys. Chem. Chem. Phys. 16 (2014) 16711.
57. Hoa, Le T.: J. Nanomater. (2014) 710874.
58. Bagwaiya, T.: AIP Conf. Proc. 1591 (2014) 938.
59. Cao, J.: CRYSTENGCOMM 16 (2014) 7731.
60. Sta, I.: J. Alloys Comp. 626 (2015) 87.
61. Chou, P.-C.: Inter. J. Hydrogen Energy 40 (2015) 729.
62. Chou, P.-C.: IEEE Sensors J. 15 (2015) 3711.
63. Zhang, J.: J. Phys. Chem. C 119 (2015) 17930.
64. Jamal, R.K.: Photonic Sensors 5 (2015) 235.
65. Fomekong, R.L.: J. Solid State Chem. 230 (2015) 381.
66. Lim, B.-W.: J. Nanosci Nanotechnol. 15 (2015) SI7522.
67. Varshney, D.: Superlatt. Microstr. 86 (2015) 430.
68. Kaur, N.: Nanotechnol. 27 (2016) 205701.
69. Mrabet, C.: Ceramics Inter. 42 (2016) 5963
70. Zhang, J.: J. Phys. Chem. C 120 (2016) 3936.
71. Zhang, J.: Phys. Chem. Chem. Phys. 18 (2016) 5386.
72. Singh, A.: Chemical Phys. Lett. 646 (2016) 41.
73. Xu, S.: ACS Applied Mater. & Interfaces 8 (2016) 3428.
74. Sta, I.: Inter. J. Hydrogen Energy 41 (2016) 3291.
75. Fomekong, L.R.: Mater. Today-Proc. 3 (2016) 586.
76.Sumithra, S.: J. Supercond. Novel Magnetism 30 (2017) 1129.
77. Zhang, J.: Phys. Chem. Chem. Phys. 19 (2017) 6313.
78. Jin, L.: Applied Sci-Basel 7 (2017) 19.
79. Wu, C.-C.: Chemical Comm. 53 (2017) 1634.
80. Khalaf, M.K.: Physica B 514 (2017) 78.
81. Riahi, R.: Applied Surface Sci 404 (2017) 34.
82. Gai, G.: J. Mater. Sci-Mater. Electron. 28 (2017) 7271.
83. Abbas, T.A.-H.: J. Mater. Sci-Mater. Electron. 28 (2017) 16086.
84. Nasirian, S.: Materials Sci Engn. B 224 (2017) 40.
85. Luo, Y.: Inter. J. Hydrogen Energy 42 (2017) 20386.
#  86. Gagaoudakis, E.: Sensor Lett. 15 (2017) 663.
#  87. Kitamura, M.:J. Vacuum Soc Japan 60 (2017) 415.
88. Gao, H.: Sensors Actuators B 269 (2018) 210.
89. Turgut, E.: Applied Surface Sci 435 (2018) 880.
90. Gawali, S.R.: J. Phys. Chem. Solids 114 (2018) 28.
91. Tan, W.: Sensors Actuators B 256 (2018) 282.
92. Chen, H.-I.: Sensors Actuators B 256 (2018) 962.
93. El khalidi, Z.: Inter. J. Hydrogen Energy 43 (2018) 12574.
94. Cheng, Y.: Mater. Res. Bull. 105  (2018) 21.
95. Kimiagar, S.: Sci Rep. 8  (2018) 16298.
96. Rimal, G.: Phys. Rev. B 98 (2018) 144442.
97. Zappa, D.: Analytica Chimica Acta 1039 (2018) 18
98. Liu, B.: Sensors Actuators B 273 (2018) 794.
99. Liu, B.: Applied Surface Sci 470 (2019) 596.
100. Al Boukhari, J.: Chemical Phys. 516 (2019) 116.
101. Zhang, D.: J. Mater. Sci-Mater. Electron.  30 (2019) 573.
102. Potlog, T.: Mater. Res. Express 6 (2019) 096440.
103. Das, P.: Front. in Mater. 6 (2019) 31.
104. Adeel, A.: J. Materiom. 5 (2019) 542.
105. Feng, C.: Sensors Actuators B 300 (2019) 127008.
106. Liu, I.-P.: Inter. J. Hydrogen Energy ‏ 44 (2019)‏ 5748.
107. Fang, Q.: Comput. Mater. Sci‏ 180 (2020) 109717.
108. Briois, P.: Coatings 10 (2020) 224.
109. Jeong, S.-Y.: Adv. Mater. 32 (2020) SI2002075.
110. Choi, K.: J. Korean Phys. Soc 77 (2020) 482.
111. Saiganesh, S.: Crystals 11 (2021) 124.
112. Haunsbhavi, K.: Ceramics Inter. 47 (2021) 13693.
113. Chtouki, T.: Optic. Mater. 118 (2021) 111294.
114. Aridi, A.: Physica Scripta 96 (2021) 105802.
115. Zhang, Z.: Proc. Nat. Acad. Sci USA 118 (2021) 2017239118.
116. Nishimoto, K.: Japan. J. Applied Phys. 61 (2022) 025505.
117. Trabelsi, A.B.: Crystals 12 (2022) 692.
118. Shahriar, R.: RSC Adv. 12 (2022) 16732.
119. Shima, T.: Japan. J. Applied Phys. 61 (2022) 088004.
120. Gupta, P.: J. Mater. Res. 37 (2022) SI369.

Huran, J., Hotový, I., Kobzev, A., Balalykin, N., : Further studies of N doped a-SiC:H films deposited by PECVD and annealed by pulse electron beam. Thin Solid Films 459 (2004) 149-151.

     1. Luo, F.: J. American Ceramic Soc. 91 (2008) 4151.
2. Hua, W.: Chinese Phys. Lett. 25 (2008) 2677.
3. Fraga, M. A.: Bull. Mater. Sci 34 (2011) 1375.
4. Peri, B.: Bull. Mater. Sci 38 (2015) 1105.

Hotový, I., Huran, J., and Spiess, L.: Characterization of sputtered NiO films using XRD and AFM. J. Materials Sci 39 (2004) 2609-2612.

1. Abbey, B.: J. Applied Phys. 99 (2006) Art. No. 124914.
2. Mohanty, P.: Physica B 405 (2010) 2711.
3. Awais, M.: Surface & Coatings Technol. 204 (2010) 2729.
4. Mallick, P.: Nuclear Instrum. Methods Phys. Res. B 268 (2010) 1613.
5. Shin, H.: J. Nanosci Nanotechnol. 11 (2011) 4629.
6. Kim, H.R.: Advanced Engn. Mater. 13 (2011) 376.
7. Kang, S.H.: Chemical Comm. 47 (2011) 10419.
8. Du, Y.: Materials Lett. 68 (2012) 168.
9. Park, S.: J. Applied Polymer Sci 125 (2012) 2929.
#   10. Mathiyan, J.: J. Applied Sci 12 (2012) 1686.
11. Safari-Alamuti, F.: Phys. Chemistry Chemical Phys. 15 (2013) 4767.
12. Lin, L.: Mater. Research Bull. 48 (2013) 2730.
13. Horak, P.Europ. Phys. J. B 86 (2013) 470.
#    14. Wang, W.: Chinese J. Sensors Actuators 26 (2013) 458.
15. Kandyla, M.: Mater. Research Bull. 49 (2014) 552.
16. Retamal, J.R.D.: ACS Photonics 1 (2014) 354.
17. Liu, B.: Electrochim. Acta 142 (2014) 336.
18. Valladares, L.: J. Vacuum Sci Technol. B 32 (2014) 051808.
19. Sun, X.: Frontiers In Chem. 2 (2014) 57.
20. Kumar, R.: Thin Solid Films 583 (2015) 233.
21. Comignani, V.: J. Power Sources 278 (2015) 119.
22. Dong, D.: Applied Surface Sci 357 (2015) 799.
23. Keraudy, J.: Applied Surface Sci 357 (2015) 838.
24. Wang, M.: Applied Surface Sci 419 (2017) 795.
25. Singh, S. D.: Mater. Sci in Semicond. Process. 66 (2017) 186.
26. Jeong, D.K.: J. Phys. D 50 (2017) 425101.
27. Dhull, N.: Vacuum (2018) 68.
28. Ravikumar, P.: J. Supercond. Novel Magnetism 31 (2018) 3761.
29. Singh, S.D.: J. Mater. Sci 54 (2019) 1992.
30. Alberto Garza-Cervantes, J.: Inter. J. Nanomed. 14 (2019) 2557.
31. Han, Q.: J. Alloys Comp. 848 (2020) 156477.
32. Yang, Y.: Dalton Trans. 50 (2021)‏  376.
33. Liu, Y.S.: Nanotechnol. Rev. 10 (2021) 166.
34. Acuna, J.R.A.: Optik 231 (2021) 166509.
35. Ece, M.S.: J. Mater. Sci-Mater. Electron. 32 (2021) 18192.
36. Guillen, C.: Physica Status Solidi A 218 (2021) 2100237.
37. Chtouki, T.: Optic. Mater. 118 (2021) 111294.
38. Shen, Z.: Acta Materialia 226 (2022) 117634.
39. Hefnawy, M.A.: CHEMISTRYSELECT 7 (2022) 202103735.

Huran, J., Hotový, I., Dubecký, F., Balalykin, N., : N-doped a-SiC:H films deposited by PECVD annealed by pulse electron beam. In: SIMC-XIII-2004. Ed. Wang, Z. et al. Piscataway: IEEE, 2004. P. 93-97.

     1. Hong, R.D.: Spectroscopy Lett. 43 (2010) 298.

Dubecký, F., Boháček, P., Zaťko, B., Sekáčová, M., Huran, J., Šmatko, V., Fornari, R., Gombia, E., Mosca, R., Pelfer, P., : Role of electrode technology in radiation detector based on semi-insulating InP in development of detector array. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 181-191.

     1. Zavadil, J.: J Optoelectr. Advanced Mater. 9 (2007) 1221.
2. Kim, H.: J. Electrochem. Sci Technol. 9 (2018) 78.

Huran, J., Hotový, I., Kobzev, A., Balalykin, N., : Low temperature plasma deposition of N-doped a-SiC:H films and annealed by pulsed electron beam. In: Proc. 16th Int. Symposium on Plasma Chemistry. Taormina 2003. P. 401.

      1. Choukourov, A.: Thin Solid Films 502 (2006) 40.

Boháček, P., Korytár, D., Ferrari, C., Dubecký, F., Surma, B., Zaťko, B., Šmatko, V., Huran, J., Fornari, R., Sekáčová, M., Strzelecka, S., : Correlation of crystal defects and galvanomagnetic parameters of semi-insulating InP with performance of radiation detectors fabricated from characterised materials. Materials Sci Engn. B 91-92 (2002) 516-520.

*    1. Pelfer, P.G: SIMC-XII-2002. Piscataway: IEEE 2002. P. 273.
2. Gorodynskyy, V.: Nuclear Instr. Methods A 555 (2005) 288.
*    3. Perďochová, A.: PhD. Thesis. Bratislava: FEI STU 2005.
4. Zdansky, K.: IEEE Trans. Nuclear Sci 56 (2009) 2997.

Morvic, M., Boháček, P., Betko, J., Dubecký, F., Huran, J., Sekáčová, M., : Electrical properties of semi-insulating GaAs irradiated with neutrons. Nuclear Instr. Methods in Phys. Res. B 197 (2002) 240-246.

1. Ladziansky, M.: In: ASDAM 2008. Piscataway: IEEE 2008. P. 179.
2. Sagatova-Perd’ochova, A.: Nuclear Instr. Methods Phys. Res. A 591 (2008) 98.
3. Bialous, M.: Applied Physics B 96 (2009) 471.
*     4. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.
5. Sedlackova, K.: Nuclear Instrum. Methods Phys. Res. A 709 (2013) 63.
6. Aldemir, D.A.: Silicon 11 (2019) 2647.

Huran, J., Hotový, I., Kobzev, A., Balalykin, N., : Influence of nitrogen concentration on conductivity of N-doped a-SiC:H films deposited by PECVD. Vacuum 67 (2002) 567-570.

1. Bau, S.: Proc. 3rd World Conf. Photovoltaic Energy Conv. B (2003) 1178.
2. Honda, K.: ECS J. Solid State Sci Technol. 5 (2016) P590.
3. Ma, X.: Vacuum 164 (2019) 355.
4. Kwon, S.: Vacuum 174 (2020) UNSP 109187.

Huran, J., Hotový, I., Kobzev, A., Balalykin, N., : PECVD nitrogen doped a-SiC:H films: properties. In: ASDAM ’02. Ed. J. Breza and D. Donoval. Piscataway: IEEE 2002. ISBN: 0-7803-7276-X. P. 67.

      1. Koeck, F.A.M.: J. Applied Phys. 112 (2012) 113707.

Hotový, I., Huran, J., Spiess, L., Liday, J., Sitter, H., and Haščík, Š.: The influence of process parameters and annealing temperature on the physical properties of sputtered NiO thin films, Vacuum 69 (2002) 237-242.

1. Bruckner, W.: J. Applied Phys. 94 (2003) 4853.
#     2. Chen, H.-L.: Mater. Trans. 46 (2005) 872.
#     3. Chen, H.-L.: Mater. Trans. 46 (2005) 2530
*     4. Yu-hua, X.: J. Guangdong Non-Ferrous Metals 15 (2005) 490.
5. Huang, J.-Z.: Trans. Nonferrous Metals Soc. China 16 (2006) 1301.
6. Ghodsi, F.E.: Surface Rev. Lett. 14 (2007) 219.
7. Reguig, B.A.: Applied Surface Sci 253 (2007) 4330.
8. Makhlouf, S.: Thin Solid Films 516 (2008) 3112.
9. Chen, H.L.: Thin Solid Films 516 (2008) 5590.
10. Jou, S.: J. Phys. Chem. Solids 69 (2008) 2804.
11. Makhlouf, S.A.: J. Materials Sci 44 (2009) 3438.
12. Shin, H.: J. Nanosci Nanotechnol. 11 (2011) 4629.
13. Saito, N.: Thin Solid Films 520 (2012) 3031.
14. Awais, M.: J. Electroanal. Chem. 689 (2013) 185.
15. Molaei, R.: Crystal Growth Design 13 (2013) 5459.
16. Solovev, A.A.: Russian J. Electrochem. 50 (2014) 647.
17. Wang, F.H.: Lecture Notes in Electr. Engn. 293 (2014) 147.
18. Mohammed, M.Z.: IEEE 40th Photovoltaic Specialist Conf. PVSC 2014 6925563, pp. 2998.
19. Sheehan, S.: J. Solid State Electrochem. 19 (2015) 975.
20. Gomaa, M.M.: J. Mater. Sci-Mater. Electron. 27 (2016) 711.
21. Atak, G.: Solid State Ionics 305  (2017) 43.
22. Khalaf, M.K.: Physica B 514  (2017) 78.
23. Hou, S.: Chemistry-an Asian J. 12 (2017) 2922.
24. Das, M. R.: Physica E 93  (2017) 243.
25. Jlassi, M.: Surfaces Interfaces 6 (2017) 218.
26. Becker, M.: Phys. Status Solidi B 255 (2018) 1700463.
27. Jamal, M.S.: Results in Phys. 14 (2019) 102360.
28. Al Boukhari, J.: Applied Phys. A 126 (2020) 74.
29. Thilagavathi, T.: J. Inorg. Organometall. Polymers Mater.‏ 31 (2021) 1217.
30. Jamal, M.S.: Applied Sci-Basel 11 (2021) 11546.
31. Madathil, R.K.: J. Phys. Chem. Solids 167 (2022) 110739.
32. Li, M.C.: Ceramics Inter. 48 (2022) 2820.

Hotový, I., Huran, J., Siciliano, P., Capone, S., Spiess, L., and Řeháček, V.: The influences of preparation parameters on NiO thin film properties for gas-sensing application. Sensors & Actuators B 78 (2001) 126-132.

1. Zhang, C.F.: Trans. Nonferrous Metals Soc. China 13 (2003) 1440.
2. Ferreira, F.F.: Solid State Ionics 165 (2003) 161.
3. Zhan, Y.J.: Materials Lett. 57 (2003) 3265.
4. Sakata, O.: Applied Surface Sci 221 (2004) 450.
5. Doppiu, S.: Chemistry Mater. 16 (2004) 5664.
6. Ottaviano, L.: Surface Interface Analys. 36 (2004) 1335.
7. Martucci, A.: J. Materials Chemist. 14 (2004) 2889.
8. Haddad, P.S.: J. Sol-Gel Sci Technol. 30 (2004) 179.
*    9. Paetzold, A.: Dissertation zur Erlangung des Dr. rer. nat. Kassel: 2002.
10. Zhan, J.: Trans. Nonferrous Metals Soc. China 15 (2005) 926.
11. Joshi, U.S.: Thin Solid Films 486 (2005) 214.
12. Cantalini, C.: Sensors Actuators B 108 (2005) 184.
13. Chiu, K.F.: J. Electrochem. Soc. 152 (2005) A1188.
14. Sasaki, A.: Japan. J. Applied Phys. 44 (2005) L256.
#   15. Yang, Y.: Huagong Xuebao/J. Chemical Industry Engn. (China) 56 (2005) 2228.
16. Han, C.-H.: Digest Techn. Papers – TRANSDUCERS ’05 (2005) 1911.
17. Zhang, Z.J.: Applied Phys. Lett. 88 (2006) 033101.
18. Arshak, K.: Thin Solid Films 495 (2006) 286.
19. Korosec, R.C.: Acta Chimica Slovenica 53 (2006) 136.
20. Han, C.H.: Korean J. Chemical Engn. 23 (2006) 362.
21. Buso, D.: J. Sol-Gel Sci Technol. 40 (2006) 299.
22. Mattei, G.: Advanced Mater.  19 (2007) 561.
23. Nandy, S.: J. Materials Sci 42 (2007) 5766.
24. Zhang, K.L.: Nanotechnology 19 (2008) art. no. 155608.
25. Zhang, K.L.: J. Nanosci Nanotechnol. 8 (2008) 5903.
26. Nogues, J.: J. Nanosci Nanotechnol. 8 (2008) 2923.
27. Gunjakar, J.L.: Sensors Actuators B 131 (2008) 356.
28. Wisitsmat, A.: Thin Solid Films 517 (2009) 2775.
29. Jang, W.L.: Applied Phys. Lett. 94 (2009) 062103.
30. Qureshi, A.: Sensors Actuators B 135 (2009) 537.
31. Qureshi, A.: Sensors Actuators B 138 (2009) 71.
32. Luyo, C.: Sensors Actuators B 138 (2009) 14.
33. Mallick, P.: Nuclear Instrum. Methods Phys. Res. B 268 (2010) 1613.
34. Srivastava, N.: Physica E 42 (2010) 2225.
35. Reddy, A.: Vacuum 85 (2011) 949.
36. Reddy, A.M.: Ceramics Inter. 37 (2011) 2837.
37. Castro-Hurtado, I.: Thin Solid Films 520 (2011) 947.
38. Garcia-Cerda, L.A.: J. Nanomater. (2011) 162495.
39. Horak, P.: NANOCON 2011. Ostrava: TANGER 2011. P. 674. ISBN 978-80-87294-27-7.
#  40. Grochowski, J.: Proc. Inter. Spring Seminar on Electron. Technol. Košice: TU Kosice, 2011. P. 63. ISBN: 978-1-4577-2112- 0.
#  41. Khafag, M.G.: Australian J. Basic Applied Sci 5 (2011) 287.
#  42. Castro-Hurtado, I.: Proc. 8th Spanish Conf. Electron Devices – CDE’2011. IEEE, art. no. 5744198. ISBN 978-142447-8637.
43. Zhu, Z.: Superlatt. Microstr. 51 (2012) 232.
44. Gupta, P.: J. Applied Phys. 111 (2012) 013706.
45. Du, Y.: Materials Lett. 68 (2012) 168.
46. Park, H. W.: Materials Lett. 74 (2012) 30.
47. Molaei, R.: J. Mater. Research 27 (2012) 3103.
48. Wang, B.: ACS Applied Mater. Interfac. 4 (2012) 5691.
49. Wu, P.: Mater. Lett. 82 (2012) 191.
50. Li, G.: RSC Adv. 2 (2012) 13018.
51. Reddy, A.: Optoelectron. Adv. Mater. 6 (2012) 1041.
#   52. Mathiyan, J.: J. Applied Sci 12 (2012) 1686.
53. Castro-Hurtado, I.: Acta Materialia 61 (2013) 1146.
54. Gutierrez, A.: Applied Surface Sci 276 (2013) 832.
55. Garduno-Wilches, I.: Inter. J. Hydrogen Energy 38 (2013) 4213.
56. Lin, L.: Mater. Res. Bull. 48 (2013) 449.
57. Reddy, A.M.: Adv. Mater. Res. 678 (2013) 361.
58. Presto, S.: Thin Solid Films 552 (2014) 1.
59. Reddy, A.K.Y.: J. Alloys Comp. 583 (2014) 396.
60. Reddy, A.K.Y.: Sci Adv. Mater. 6 (2014) 178.
61. Dong, Q.: Applied Catalysis B 147 (2014)  741.
62. Offiah, S.U.: Optik  125 (2014) 2905.
63. Kim, K.H.: Optik  125 (2014) 2899.
64. Boukhachem, A.: Mater. Sci Engn. B 188 (2014) 72.
65. Jana, S.: Dalton Trans. 43 (2014) 13096.
66. Valladares, L.: J. Vacuum Sci Technol. B 32 (2014) 051808.
67. Song, X.: Vacuum  111 (2015) 48.
68. Choi, S.-W.: RSC Adv. 5 (2015) 71955.
69. Thubsuang, U.: Mater. Sci Engn. B 200 (2015) 67.
70. Al-Kuhaili, M. F.: Mater. Sci Semicond. Process. 39 (2015)84.
71. Garduno-Wilches, A.: J. Electron. Mater. 44 (2015) 4283.
72. Prabhu, V.: J. Phys. Chemist. Solids 87 (2015) 238.
73. Kang, I.-K.: IEEE Sensors J. 15 (2015) 7234.
74.  Larcher, D.: Mater. Chem. Phys. 174 (2016) 1.
75. Kokubun, Y.: Thin Solid Films 601 (2016) 76.
76. Huang, Y.: J. Alloys Comp. 686 (2016) 564.
77. Khaleed, A. A.: J. Mater. Sci 52 (2017) 2035.
78. Zappa, D.: Beilstein J. Nanotechnol. 8 (2017) 1205.
79. Nakai, H.: Applied Phys. Lett. 110 (2017) 181102.
80. Cindemir, U.: Sensors Actuators B 242 (2017) 132.
81. Rickerby, D. G.: RSC Detection Sci Ser. 10 (2017) 48.
82. Peter, R.: Croatica Chemica Acta 90 (2017) SI163.
#  83. Gagaoudakis, E.: Sensor Lett. 15 (2017) 663.
84. Oh, S.: J. Nanosci Nanotechnol. 18 (2018) 6213.
85. Majd, S.M.: Sensors Actuators B 266 (2018) 178.
86. Cosar, M.B.: J. Vacuum Sci Technol. A 36 (2018) 031501.
87. Guo, J.: Solar Energy Mater. Solar Cells 178 (2018) 193.
88. Shajudheen, M.V.P.: Mater. Today-Proc. 5 (2018) 8577.
89. Lin, C.-W.: Japan. J. Applied Phys. 57 (2018) S01AE01.
90. Bai, D.S.: Mater. Today-Proc. 5 (2018) 20793.
91. Guo, J.: Inorganic Chem. 57 (2018) 8874.
92. Pintor-Monroy, M.I.: ACS Applied Mater. Interfaces 10 (2018) 38159.
93. Parui, J.: Mater. Research Bull. 107 (2018) 321.
94. Mateos, D.: Ceramics Inter. 45 (2019) 11403.
95. Al-Hossainy, A.F.: J. Alloys Compounds 789 (2019) 670.
96. Acharya, A.D.: Current Nanosci 15 (2019) 354.
97. Ganapathi, S.K.: ACS Applied Nano Mater. 2 (2019) 6726.
98. Petersen, J.E.: Europ. Phys. J. B 92 (2019) 232.
99. Baig, M.K.: J. Mater. Engn. Perform. 28 (2019) 5882.
100. Pintor-Monroy, M.I.: ACS Applied Mater. Interf. 11 (2019) 27048.
101. Huang, T.-M.: J. Applied Phys. 128 (2020) 043302.
102. Arunodaya, J.: Mater. Res. Express 7 (2020) 016405.
103. Kokubun, Y.: Phys. Status Solidi B 257 (2020) 2000330.
104. Kaya, D.: J. Molecul. Struct. 1230 (2021) 129662.
105. Chtouki, T.: Optic. Mater. 118 (2021) 111294.
106. Shkir, M.: Chinese J. Phys. 72 (2021) 547.
107. Kokubun, Y.: Phys. Status Solidi B 258 (2021) 2100230.
108. Halium, E.M.F.A.: J. Mater. Sci-Mater. Electron. 33 (2022) 10165.

Hotový, I., Huran, J., Spiess, L., Čapkovic, R., and Haščík, Š.: Preparation and characterization of NiO thin films for gas sensor applications, Vacuum 58 (2000) 300-307.

1. Porqueras, I.: Thin Solid Films 398 (2001) 41
2. Srivastava, D.N.: Ultrasonics Sonochemistry 10 (2003) 1.
3. Wu, L.L.: Materials Lett. 58 (2004) 2700.
*       4. Ai, D.: China Particuology 2 (2004) 157.
5. Srivastava, D.N.: Ultrasonics Sonochem. 12 (2005) 205.
6. Yang, T.S.: J. Vacuum Sci Technol. A 23 (2005) 1238.
7. Han, C.-H.: Digest Techn. Papers – TRANSDUCERS ’05 (2005) 1911.
8. Belous, A.G.: Russian J. Applied Chemistry 79 (2006) 345.
9. Yu, M.: J. Univ. Sci Technol. Beijing 13 (2006) 169.
10. Han, Ch.: Korean J. Chemical Engn. 23 (2006) 362.
11. Abbey, B.: J. Applied Phys.  99 (2006) Art.  no. 124914.
12. Wu, Y.: Materials Lett. 61 (2007) 3174.
13. Li, Q.: Materials Lett. 61 (2007) 1615.
14. Tresback, J.S.: IEEE Trans. Nanotechnol. 6 (2007) 676.
15. Tresback, J.S.: J. Mater. Research 23 (2008) 2047.
16. Luyo, C.: Sensors Actuators B 138 (2009) 14.
17. Das, S.: J. Alloys Compounds 505 (2010)  L19.
18. Farhadi, S.: Polyhedron 30 (2011) 1244.
19. Guziewicz, M.: Optica Applicata 41 (2011) 431.
#     20. Soleimanpour, A.M. : Inter. Semicond. Device Research Symp. – ISDRS 2011. IEEE, art. no. 6135379. ISBN 978-145771-7550. 6135379
#     21. Grochowski, J.: Proc. Inter. Spring Seminar on Electron. Technol. Košice: TU Kosice, 2011. P. 63. ISBN: 978-1-4577-2112- 0.
22. Ding, Y.: J. Materials Chem. 22 (2012) 980.
23. Soleimanpour, A.M.: Mater. Sci Engn. C 32 (2012) 2230.
24. Wang, B.: ACS Applied Mater. Interfac. 4 (2012) 5691.
25. Soleimanpour, A.M.: ACS Applied Mater. Interfaces 4 (2012) 4651.
#     26. Mathiyan, J.: J. Applied Sci 12 (2012) 1686.
27. Teoh, L.G.: Mater. Trans. 53 (2012) 2135.
28. Castro-Hurtado, I.: Acta Materialia 61 (2013) 1146.
29. Nalage, S.R.: J. Mater. Sci-Mater. Electron. 24 (2013) 368.
30. Soleimanpour, A.M.: Sensors Actuators B 182 (2013) 125.
31. da Silva, M.: J. Mater. Sci-Mater. Electron. 24 (2013) 1823.
32. El-Kemary, M.: Mater. Sci Semicond. Process. 16 (2013) 1747.
33. Deore, M. K.: Sensor Lett. 11 (2013) 1919.
34. Reddy, A.K.Y.: J. Alloys Comp. 583 (2014) 396.
35. Reddy, A.K.Y.: Sci Adv. Mater. 6 (2014) 178.
36. Farag, A.A.M.: Polyhedron 71 (2014) 75.
37. Sharma, R.: Optik  125 (2014) 6751.
38. Ben Amor, M.: Mater. Sci Semicond. Process. 27 (2014) 994.
#      39. Kumar, R.:  Lecture Notes in Electrical Engn. 268 (2014) LNEE, pp. 121.
40. da Silva, M.R.: Ionics 21 (2015) 1407.
#      41. Thangamani, G.: Inter. J. ChemTech Research 8 (2015) 70.
42. Zhang, Y.: J. Mater. Sci-Mater. Electron. 26 (2016) 1817.
43. Sato, K.: Japan. J. Applied Phys. 55 (2016) 06GJ10.
44. Lavanya, J.: AIP Conf. Proc. 1724 (2016) 020050.
45. Fayemi, O.E.: J. Nanomater. (2016) 9614897.
46. Helan, V.: Results in Phys. 6 (2016) 712.
47. Sankar, S.: Optik 127 (2016) 10727.
48. Jacobs, C.B.:  Proc. SPIE 9749 (2016) 97491Q.
49. Nasseri, M.A.: Applied Organometall. Chem. 30 (2016) 978.
50. Jacobs, C.B.: J. Photonics for Energy 6 (2016) 038001.
51. Bespalova, Zh.I.: Nanosystems-Phys. Chem. Mathemat. 7 (2016) 433.
52. Gomez-Perez, J.: Catal. Today 284 (2017) 37.
53. Ningsih, S.K.W.: Makara J. Sci 21 (2017) 19.
#     54. Nam: W.J. ECS Transactions 66 (2015) 275.
55. Augustine, C.: Digest J. Nanomater. Biostruct. 12 (2017) 523.
56. Cerc Korosec, R.: Thermochim. Acta 655 (2017) 344.
57. Das, M.R.: Physica E 93 (2017) 243.
58. Augustine, C.: J. Non-Oxide Glasses 9 (2018) 85.
59. Chandrakala, M.: Mater. Chem. Phys. 201 (2017) 344.
60. Patel, K.N.: Mater. Res. Express 4 (2017) 105027.
61. Farag, H. K.: J. Mater. Sci-Mater. Electron. 28 (2017) 15480.
62. Dhanisha, K.M.: Inter. J. Nanosci 17 (2018) 1760039.
63. Sabzehparvar, M.: Mater. Today-Proc. 5 (2018) SI15821.
64. Zhao, S.: Ceramics Inter. 44 (2018) 753.
65. Arble, C.: Thin Solid Films 660 (2018) 365.
66. Potlog, T.: Mater. Res. Express 6 (2019) 096440.
67. Hammad, A.H.: Physica B 568 (2019) 6.
68. Ganesh, V.: Mater. Res. Express 6 (2019) 086439.
69. Zhang, Y.: Applied Surface Sci 481 (2019) 138.
70. Mateos, D.: Ceramics Inter. 45 (2019) 11403.
71. Derikvand, Z.: Applied Organometall. Chem. 33 (2019) e4864.
72. Kate, R.S.: J. Electron. Mater. 48 (2019) 3220.
73. Behera, B.: J. Breath Res. 13 (2019) 024001.
74. Liang Y.: J. Inorg. Mater. 34 (2019) 79.
75. Zaheer, A.: J. Nanoelectron. Optoelectron. 14 (2019) 1304.
#    76. Joseph, S.: Inter. J. Thin Film Sci Technol. 8 (2019) 131.
77. Manthrammel, M.A.: Chinese J. Phys. 66 (2020) 91.
78. Wilson, R.L.: ACS Sensors‏ 5 (2020) 1389.
79. Boulila, S.: Phil. Magazine Lett. 100 (2020) 283.
80. Baraskar, P.: AIP Conf. Proc. 2220 (2020) 020161.
81. Gurenko, V.E.: Mater. Lett. 279 (2020) 128478.
82. Gupta, P.: J. Mater. Sci-Mater. Electron. 32 (2021) 3529.
83. Abbasnejad, S.: Russian J. Electrochem. 57 (2021) 478.
84. Kuba, A.S.M.: Mater. Today-Proc. 49 (2022) 2741.

Hotový, I., Huran, J., Spiess, L., Haščík, Š., and Řeháček, V.: Preparation of nickel oxide films for gas sensors applications Sensors Actuators B 57 (1999) 147-152.

1. Porqueras, I.: Thin Solid Films 398 (2001) 41.
2. Bosco, C. A. C.: Phys. Rev. B 66 (2002)  125406.
*    3. Paetzold, A.: Dissertation zur Erlangung des Dr. rer. nat. Kassel: 2002.
4. Zhang, C.F.: Trans. Nonferrous Metals Soc. China 13 (2003) 1440.
5. Zhang, C.: Yazawa Inter. Symp. 3 (2003) 417.
#    6. Acosta, D.R.: Microscopy and Microanalysis 9 (2003) 620.
7. Zhan, Y.J.: J. Solid State Chem. 177 (2004) 2281.
*    8. Gomes, K.Q.: Tese de Doutor em Ciencia e engenharia de materiais. Sao Carlos: 2004.
9. Zhan, J.: Trans. Nonferrous Metals Soc. China 15 (2005) 926.
10. Magana, C.R.: Solar Energy 80 (2006) 161.
11. Yu, M.: J. Univ. Sci Technol. Beijing 13 (2006) 169.
12. Li, X.L.: Solid State Comm. 137 (2006) 581.
13. Karakasidis, T.E.: Surface Sci 600 (2006) 1952.
14. Sasi, B.: Nanotechnology 18 (2007) 115613.
15. Perentes, A.: J. Vacuum Sci Technol. B 25 (2007) 2228.
16. Yang, L.X.: J. Solid State Chem. 180 (2007) 2095.
17. Gunjakar, J.L.: Sensors Actuators B 131 (2008) 356.
18. Varghese, B.: Chemistry Mater. 20 (2008) 3360.
#   19. Yuan, Z.: J. Chinese Ceramic Soc. 36 (2008) 341.
20. Nandy, S.: J. Phys.-Cond. Matter 21 (2009) 115804.
21. Qiu, Y.J.: Nanoscale Research Lett. 4 (2009) 173.
22. Qiu, Y.J.: Materials Lett. 63 (2009) 200.
23. Qiao, H.X.: J. Nanomater. (2009) 795928.
24. Wei, Z.Q.: J. Alloys Compounds 479 (2009) 855.
25. Salavati-Niasari, M.: Inorganica Chim. Acta  362 (2009) 3691.
26. Ma, M.G.: Mater. Lett. 63 (2009) 1791.
27. Kumari, L.: Crystal Research Technol. 44 (2009) 495.
28. Rani, J.D.V.: J. Colloid Interface Sci 341 (2010) 48.
29. Romero, R.: Thin Solid Films 518 (2010) 4499.
30. Das, N.S.: Physica E 42 (2010) 1377.
31. Rahman, M.M.: Solid State Ionics 180 (2010) 1646.
32. Wei, Z.P.: ACS NANO 4 (2010) 4785.
33. Das, S.: J. Alloys Compounds 505 (2010)  L19.
34. Tadic, M.: Materials Lett. 64 (2010) 2129.
35. Gavade, C.: Nuclear Instrum. Methods Phys. Research B 268 (2010) 3127.
36. Kim, D.S.: Proc. SPIE 7660  (2010).
37. Rubio-Marcos, F.: J. Alloys Compounds 509 (2011) 2891.
38. Jiang, W.T.: Applied Surface Sci 257  (2011) 3253.
39. Hosny, N.M.: Polyhedron 30 (2011) 470.
40. Farhadi, S.: Polyhedron 30 (2011) 1244.
41. Farhadi, S.: Polyhedron 30 (2011) 971.
42. Hayat, K.: J. Molecular Catalysis A 336 (2011) 64.
43. Wang, T.: NANO 6 (2011) 67.
44. Gandhi, A.C.: Nanoscale Research Lett. 6 (2011) 485.
45. Zhao, J.: Materials Research Bull. 46 (2011) 2427.
#  46. Das, N.S.: Inter. J. Nanosci 10 (2011) 985.
47. Dalavi, D.S.: J. Solid State Electrochem. 16 (2012) 253.
48. Amin, R.S.: Electrochim. Acta 59 (2012) 499.
49. Kalam, A.: Materials Character. 68 (2012) 77.
50. Tahmasian, A.: Inorganica Chim. Acta 387 (2012) 327.
51. Atla, S. B.: Chemical Engn. J. 184 (2012) 333.
52. Karpinski, A.: Thin Solid Films 520 (2012) 3609.
53. Abbasi, M.A.: Sensors 12 (2012) 15424.
54. Sekiya, K.: Microelectr. Engn. 98 (2012) 532.
55. Reddy, A. M.: J. Optoelectr. Advanced Mater. 14 (2012) 763.
56. Kim, D.S.: J. Applied Phys. 112 (2012) 034504.
57. Hamid, M.A.: Advanced Mater. Research. 399-401 (2012) 581.
58. Masoomi, M.Y.: Coordinat. Chem. Rev. 256 (2012) 2921.
59. Teoh, L.G.: Mater. Trans. 53 (2012) 2135.
60. Khalaji, A.D.: J. Cluster Sci 24 (2013) 189.
61. Khalaji, A.D.: J. Cluster Sci 24 (2013) 209.
62. Shi, J.: Micropor. Mesoporous Mater. 168 (2013) 188.
63. Hasan, N.: Talanta 103 (2013) 38.
64. Nalage, S.R.: J. Mater. Sci-Mater. Electron. 24 (2013) 368.
65. Molaei, R.: J. Applied Phys. 113 (2013) 233708.
66. Awais, M.: J. Electroanal. Chem. 689 (2013) 185.
67. Shin, Y.: J. Korean Phys. Soc 63 (2013) 1199.
68. Samiey, B.: Chimica Slovenica 60 (2013) 763.
69. Barakat, A.: Inter. J. Molecular Sci 14 (2013) 23941.
70. Xie, Q.: RSC Adv. 3 (2013) 24430.
#   71. Wu, J.-R.: Huanan Ligong Daxue Xuebao/J. South China Univ. Technol.
Natural Sci) 41 (2013) 135-141+146.
#    72. Wan, M.: Proc. Meetings on Acoust. 19 (2013) 045024.
73. Liu, L.: Electrochim. Acta 114 (2013) 42.
74. Ahmadisoltansaraei, K.: Inter. J. Minerals Metall. Mater. 21 (2014) 726.
75. Sharma, R.: Mater. Sci Semicond. Process. 23 (2014) 42.
76. Dominguez-Canizares, G.: J. Mater. Sci 49 (2014) 2773.
77. Thi, T.D.V.: Industrial Engn. Chem. Res. 53 (2014) 3888.
78. Moghaddam, J.: Korean J. Chemical Engn. 31 (2014) 503.
79. Guo, H.: Particle Particle Systems Character. 31 (2014) 374.
80. Basith, N. M.: J. Nanosci Nanotechnol. 14 (2014) 2577.
81. Gowthami, V.: Mater. Sci Semicond. Process. 27 (2014) 1042.
82. Rashad, M.M.: Applied Phys. A 117 (2014) 877.
83. Gowthami, V.: Physica B 452 (2014) 1.
84. Vu, T.T.D.: Industrial Engn. Chemistry Research 53 (2014) 3888.
85. Bharathi, B.: J. New Mater. Electrochem. Systems 17 (2014) 173.
86. Rajendran, V.: Mater. Sci Semicond. Process. 38 (2015) 203.
87. Chen, T. F.: J. Alloys Comp. 643 (2015) 167.
88. Salvadori, M.R.: PLOS ONE 10 (2015) e0129799.
89. Kumar, R.: Thin Solid Films 583 (2015) 233.
90. Sheehan, S.: J. Solid State Electrochem. 19 (2015) 975.
91. Iwueke, D.C.: J. Mater. Sci-Mater. Electron. 26 (2015) 2236.
92. Paeng, D.: J. Phys. Chem. C 119 (2015) 6363.
93. Madhup, M.K.: Progress In Organic Coat. 80 (2015) 1.
94. Chakrabarty, N.: AIP Conf. Proc. 1665 (2015) 050072.
95. Anandan, K.: Mater. Sci Engn. B 199 (2015) 48.
96. Park, S.: Nanosci Nanotechnol. Lett. 7 (2015) 713.
97. Ranjbar, M.: J. Mater. Sci-Mater. Electron. 26 (2015) 8029.
98. Al-Heniti, S. H.: Sci Advanced Mater. 7 (2015) 2459.
99. Vernardou, D.: Chemical Vapor Dep. 21 (2015) 369.
100. Tripathi:S.K, Solid State Phenomena 232 (2015) 1
#  101. SCOPUS Ponnusamy: P.M, Int. Journal of Chemical Sciences 13 (2015) 683.
102. Sun, G.-J.: Ceramics Inter. 42(2016) 1063.
103. Ye, Y.: Applied Surface Sci 362 (2016) 20.
104. Kaur, N.: Nanotechnol. 27 (2016) 205701.
105. Kaviyarasu, K.: Ceramics Inter. 42 (2016) 8385.
106. Park, S.: Bull. Korean Chemical Soc 37 (2016) 713.
107. El-Megharbel, S.M.: J. Molecular Liquids 216 (2016) 608.
108. Hu, C.-W.: J. Mater. Chem. C 4 (2016) 5390.
109. Sharma, R.: Optik 127 (2016) 4661.
110. Shajudheen, V.P.M.: Mater. Today-Proc. 3 (2016) 2450.
111. Srivastava, M.: RSC Adv. 6 (2016) 109083.
112. Sadeghi, M.: J. Environmental Chem. Engn. 4 (2016)  2990.
113. Zhang, Z.: J. Nanopart. Research 18 (2016) 247.
114. Lashanizadegan, M.: J. Ceramic Process. Research 17 (2016) 586.
#   115. Al Majthoub, M.M.: J. Comput. Theoret. Nanosci 13 (2016) 7014.
116. Mutkule, S.U.: J. Alloys Comp. 695 (2017) 2008.
117. Ditta, M.A.: Russian J. Applied Chem. 90 (2017) 151.
118. Agrawal, S.: J. Lumin. 184 (2017) 250.
119. Sadeghi, M.: Applied Surface Sci 400 (2017) 471.
120. Soofivand, F.: J. Photochem. Photobiol. A 337 (2017) 44.
121. Ben Mansour, N.:J. Mater. Sci-Mater. Electron. 28 (2017) 11284.
122. Naeemy, A.: J. Analyt. Chem. 72 (2017) 783.
123. Lacerda, M. M.: Applied Phys. Lett. 110 (2017) 202406.
124. Dubey, P.: J. Phys. Conf. Ser. 836  (2017) UNSP 012040.
125. Bharathy, G.: J. Mater. Sci-Mater. Electron. 28  (2017) 17889.
126. Ashik, U. P. M.: Comptes Rendus Chimie 20  (2017) 896.
127. Das, M. R.: Physica E 93 (2017) 243.
128. Dubey, P.: AIP Conf. Proc. 1942  (2018) UNSP 140072.
129. Dubey, P.: RSC Adv. 8  (2018) 5882.
130. Das, M. R.: J. Mater. Sci-Mater. Electron. 29  (2018) 1216.
131. Khan, S.: Mater. Sci Engn. B 229  (2018) 155.|
132. Bharathy, G.: Physica B 530  (2018) 75.
133. Rawool, S.A.: Applied Catal. B 221  (2018) 443.
134. Oh, S.: J. Nanosci Nanotechnol. 18 (2018) 6213.
135. Arif, M.: J. Electronic Mater. 47 (2018) 3451.
136. Iqbal, M. J.: Mater. Research Express 5  (2018) 065002.
137. Rahman, M. A.: J. Alloys Compounds 742 (2018) 421.
138. Mondal, M.: J. Electroanalyt. Chem. 813 (208) 116.
139. Dhanisha, K.M.: Inter. J. Nanosci 17 (2018) 1760039.
140. Usha, V.: Inter. J. Nanosci 17 (2018) 1850003.
141.Guillemot, T.: Thin Solid Films 661 (2018) 143.
142. Ben Mansour, N.: J. Inorganic Organometall. Polymers Mater. 29 (2019) 192.
143. Borah, D.J.: Mater. Sci Semicond. Process. 93 (2019) 111.
144. Binod, D.C.: IEEE Trans. Magnet. 55 (2019) 2900205.
145. Lee, J.H.: J. Power Sources 412 (2019) 425.
146. Parwani, S.: AIP Conf. Proc. 2100 (2019) 020092.
147. Dubey, P.: AIP Conf. Proc. 2100 (2019) 020171.
148. Rahman, M. A.: SN Applied Sci 1 (2019) 221.
149. Hammad, A.H.: Physica B 568 (2019) 6.
150. Khatri, A.: Bull. Mater. Sci 42 (2019) 141.
151. Mateos, D.: Ceramics Inter. 45 (2019) 11403.
152. Mohammadi, M.: J. Petroleum Sci Engn. 177 (2019) 1103.
153. Govindarajan, B.: J. Mater Sci-Mater. Electron. 30 (2019) 6519.
154. Chaudhary, A.: ACS Applied Electr. Mater. 1 (2019) 892.
155. Shujah, T.: Nanosci Nanotechnol. Lett. 11 (2019) 1050.
156. Wang, F.: Phys. Chem. Chem. Phys. 21 (2019) 17852.
157. Becker, M.: J. Applied Phys. 126 (2019) 134901.
158. Ganapathi, S.K.: ACS Applied Nano Mater. 2 (2019) 6726.
159. Abboud, M.: New J. Chem. 44 (2020) 3402.
160. Williams, L.: Mater. Chem. Phys. 242 (2020) 122469.
161. Zeb, A.: Mater. Chem. Phys. 239 (2020) 122036.
162. Shin, J.: Advanced Mater. 32 (2020) 1905527.
#     163. Priyamvada, D.: Inter. Conf. Applied Electromagn., Signal Process. Comm. AESPC 2018, no. 9033295.
164. Lee, J.H.: J. Soc Inf. Display 27 (2019) 806.
165. Salunkhe, P.: Mater. Res. Express 7 (2020) 016427.
166. Giri, N.: J. Mater. Sci-Mater. Electron. 31 (2020) 12628.
167. Boulila, S.: Phil. Magazine Lett. 100 (2020) 283.
168. Perumal, R.: Mater. Today-Proc. 33 (2020)‏ ‏ 3989.
169. Revathy, M.S.: Mater. Today-Proc. 33 (2020)‏ 1165.
170. Karamzadeh, A.: Solid State Comm. 325 (2021) 114167.
171. Gupta, P.: J. Mater. Sci-Mater. Electron. 32 (2021) 3529.
172. Pehlivanoglu, S.A.: Physica B 603 (2021) 412482.
173. Jeba, S.V.: Inorg. Nano-Metal Chem. 51 (2020) 1431.
174. Momeni, B.Z.: Applied Organometal. Chem. 35 (2021) 6179.
175. Kumar, V.P.: Optik 231 (2021) 166388.
176. Rubab, R.: Colloids Surfaces A-Physicochem. Engn. Aspects 615 (2021) 126253.
177. Alharthi, F.A.: Crystals 11 (2021) 456.
178. Maity, P.C.: J. Mater. Sci-Mater. Electron. 32 (2021) 16761.
179. Chandekar, K.V.: J. Mater. Res. Technol.-JMR&T 15 (2021) 2584.
#     180. Lekshmi, M.S.: Key Engn. Mater. 877 (2021) 96.
181. Chang, Y.T.: Applied Sci-Basel 12 (2022) 7206.
182. Zouridi, L.: Adv. Mater. Technol. 7 (2022) 2101491.
183. Narender, S.S.: Chem. Engn. Technol. 45 (2022) 397.
184. Sivakumar, S.: Mater. Technol. 37 (2022) 1375.

Hotový, I., Huran, J., Janík, J., and Kobzev, A.: Deposition and properties of nickel oxide films produced by DC reactive magnetron sputtering Vacuum 50 (1998) 157.

1. Porqueras, I.: Thin Solid Films 398 (2001) 41.
2. Chan, I.M.: Applied Phys. Lett. 81 (2002) 1899.
3. Bosco, C. A. C.: Phys. Rev. B 66 (2002)  125406.
4. Yu, G.H.: Applied Phys. A 76 (2003) 45.
5. Bruckner, W.: J. Applied Phys. 94 (2003) 4853.
6. Seo, S.: Applied Phys. Lett. 85 (2004) 5655.
7. Depla, D.: Surface Coatings Technol. 183 (2004) 196.
8. Chan, I.M.: Thin Solid Films 450 (2004) 304.
*     9. Avendano Soto, E.D.: PhD Thesis. Acta Univ. Upseliensis. Uppsala: Fac. Sci Technol. 2004. ISBN: 91-554-5996-X.
10. Lutzenkirchen-Hecht, D.: Rev. Sci Instrum. 76 (2005) Art. No. 073905.
11. Zhao, S.X.: Solar Energy Mater. Solar Cells 90 (2006) 308.
12. Zhou, Y.: Materials Sci Engn. B 135 (2006) 125.
13. Lutzenkirchen-Hecht, D.: Surface Sci 600 (2006) 4380.
14. Huang, J.Z.: Trans. Nonferrous Metals Soc. China 16 (2006) 1301.
#     15. Zhou, Y.: Chinese Optics Lett. 4 (2006) 678.
16. Ringpfeil, C.: Thin Solid Films 515 (2007) 5597.
17. Zhou, Y.: Materials Lett. 61 (2007) 2482.
18. Sasi, B.: Nanotechnology 18 (2007) Art. No. 115613.
19. Ringpfeil, C.: Physica Status Solidi A 204 (2007) 2792.
20. Tharayil, N.J.: Physica B 399 (2007) 1.
#     21. Zhou, Y.: Zhongguo Jiguang/Chinese J. Lasers 34 (2007) 125.
22. Ai, L.: Applied Surface Scie 254 (2008) 2401.
23. Tharayil, N.J. Indian J. Engn. Materials Sci 15 (2008) 489.
24. Jang, W.L.: Surface Coatings Technol. 202 (2008) 5444.
25. Sun, N.H.: Solar Energy Mater. Solar Cells 94 (2010) 2328.
26. Sun, N.H.: J. Phys. D 43 (2010) 445101.
27. Zhou, Y.: Physica B 405 (2010) 3875.
28. Garduno, I.A.: J. Crystal Growth 312 (2010) 3276.
29. Chien, F.S.S.: Applied Phys. Lett. 98 (2011) 153513.
30. Guziewicz, M.: Optica Applicata 41 (2011) 431.
31. Jang, W.L.: EPL 96 (2011) 37009.
32. Castro-Hurtado, I.: Thin Solid Films 520 (2011) 947.
33. Guziewicz, M.: Procedia Engn. 25 (2011).
34. Guziewicz, M.: Acta Physica Polonica A 120 (2011) A69.
#   35. Grochowski, J.: Proc. Inter. Spring Seminar on Electron. Technol. Košice: TU Kosice, 2011. P. 63. ISBN: 978-1-4577-2112- 0.
#   36. Castro-Hurtado, I.: Proc. 8th Spanish Conf. Electron Devices – CDE’2011. IEEE, art. no. 5744198. ISBN 978-142447-8637.
37. Huang, Y.: Applied Surface Sci 258 (2012) 7435.
38. De Gryse, R.: Thin Solid Films 520 (2012) 5833.
39. Hsu, C.-Y.: Electrochimica Acta 66 (2012) 210.
40. Karpinski, A.: Thin Solid Films 520 (2012) 3609.
41. Soleimanpour, A.M.: Mater. Sci Engn. C 32 (2012) 2230.
42. Soleimanpour, A.M.: Sensors Actuators B 182 (2013) 125.
43. Huang, C.-C.: Thin Solid Films 544 (2013) 348.
44. Reddy, A.: Springer Proc. Phys. 143 (2013) 165.
45. Reddy, A.K.Y.: Mater. Express 4 (2014) 32.
46. Reddy, A.K.Y.: J. Alloys Comp. 583 (2014) 396.
47. Burgstaller, W.: J. Mater. Res. 29 (2014) 148.
48. Ebrahimi, M.: J. Phys. D 47 (2014) 115302.
49. Thi, T.D.V.: Industrial Engn. Chem. Res. 53 (2014) 3888.
50. Boukhachem, A.: Mater. Sci Semicond. Process. 27 (2014) 994.
51. Boukhachem, A.: Mater. Sci Engn. B 188 (2014) 72.
52. Vu, T.T.D.: Industrial Engn. Chem. Research 53 (2014) 3888.
53. Ben Amor, M.: Mater. Sci Semicond. Process. 27 (2014) 994.
54. Ben Ameur, S.: Superlatt. Microstr. 84 (2015) 99.
55. Kang, J.S.: Sci Rep. 5 (2015) 10450.
56. Khatibani, A.B.: Bull. Mater. Sci 38 (2015) 319.
57. Wang, J.: Nanoscale Research Lett. 10 (2015) 119.
58. Zhang, C.: J. Mater. Chem. A 3 (2015) 10519.
59. Madah, F.: J. Alloys Comp. 658 (2016) 272.
60. Cruz-Ortiz, B.R.: J. Electroanal. Chem. 772 (2016) 38.
61. Yu, H.: Mater. Sci-Medziagotyra 22 (2016) 184.
62. Ahmed, A.A.: Mater. Research Express 3 (2016) 116405.
63. Makuku, O.: Ceramics Inter. 42 (2016) 14581.
64. Ningsih, S.K.W.: Makara J. Sci 21 (2017) 19.
65. Riahi, R.: Applied Surface Sci 404 (2017) 34.
66. Keraudy, J.: J. Applied Phys. 121 (2017) 171916.
67. Poulopoulos, P.: J. Nanosci Nanotechnol. 17 (2017) 8842.
#    68. Zhang, T.: Guangdianzi Jiguang/J. Optoelectron. Laser 11 (2017) 1218.
69. Mondal, M.: J. Electroanalyt. Chem. 813 (208) 116.
70. Huo, X.-L.: Nanoscale 10 (2018) 19224.
71. Ben Ameur, S.: Vacuum 155 (2018) 546.
72. Slimi, H.: Superlatt. Microstr. 120 (2018) 670.
#    73. Ran, M.: Fenmo Yejin Cailiao Kexue yu Gongcheng/Mater. Sci Engn. Powder Metall. 23 (2018) 63.
74. Hammad, A.H.: Physica B 568 (2019) 6.
75. Zouini, M.: J. Mater Sci-Mater. Electron. 30 (2019) 7110.
76. Choi, K.: J. Mater. Chem. A 7 (2019) 1468.
77. Arunodaya, J.: Mater. Research Express 7(2020) 016405.
78. Woods-Robinson, R.: IEEE J. Photovolt.‏ 11 (2021) 247.
79. Li, Y.: Kexue Tongbao/Chinese Sci Bull. 66 (2021) 4197.
80. Son, K.R.: Applied Surface Sci 575 (2022) 151783.
81. Zouini, M.: Silicon 14 (2022) 2115.
82. Lutzenkirchen-Hecht, D.: Phys. Status Solidi A 219 (2022) 2100514.
83. Ganesh, V.N.: Mater. Today-Proc. 55 (2022) 135.
84. Ouyang, Z.P.: Materials 15 (2022) 4781.

Hotový, I., Huran, J., Breternitz, V., Spiess, L., Teichert, G., Schawohl, J., : Effect of oxygen concentration in the sputtering mixture on the properties of dc magnetron sputtered NiO films. In: 43. Inter. Wissenschaft. Kolloquium. Ilmenau: TU 1998. P. 509.

       1. Tan, L.: Acta Materialia 50 (2002)  4449.

Šafránková, J., Huran, J., Hotový, I., Kobzev, A., and Korenev, S.: Characterization of nitrogen-doped amorphous silicon carbide thin films Vacuum 51 (1998) 165.

#     1.Li, B.: Frontiers Mater. Sci China 1 (2007) 309.
#     2. Fraga, M.A.: ECS Trans. 14 (2008) 375.
3. Schnabel, M.: Thin Solid Films 527 (2013) 193.
4. Wei, J.: Ceramics Inter. 44 (2018) 20375.
5. Lewandkow, R.: Vacuum 177 (2020) UNSP 109345.

Mudroň, J., Müllerová, J., Dubecký, F., Huran, J., : Optical properties of InP:Fe irradiated by fast neutrons. In: ASDAM 98. Eds. J.Breza et al. Piscataway: IEEE 1998. ISBN 0-7803-4909-1. P. 235.

*      1. Niu, X.: US Patent 6,694,275, 2004.

Huran, J., Šafránková, J., Kobzev, A., : Preparation of hydrogenated amorphous silicon carbide thin films by plasma enhanced chemical vapour deposition Vacuum 50 (1998) 103.

      1. Du, P.Y.: J. Phys. Chem. Solids 64 (2003) 777.
2. Prado, R.J.: J. Non-Crystalline Solids 330 (2003) 196.
3. Pakula. L.S.: J. Micromechanics Microengn. 14 (2004) 1478.
4. Pham, H.T.M.: Proc. SPIE 4557 (2001) 272.
5. Du, J.F.: J. Wuhan Univ. Technol. 23 (2008) 658.
6. Torchani, A.: Sensor Lett. 9 (2011) 2182.

Hotový, I., Huran, J., Haščík, Š., Lalinský, T., : Reactively sputtered NbN Schottky contacts on GaAs and their thermal stability Vacuum 50 (1998) 403.

*    1. Venger, E.F.: Mežfaznyje vzaimodeistvija i mechanizmy degradacii v strukturach metall-InP i metall-GaAs. Kyjev: Nac. Akad. Nauk Ukrajiny 1999.
2. Dmitruk, N.L.: Applied Surface Sci 166 (2000) 520.
3. Dmitruk, N.L.: Surface Sci 482 (2001) 928.
4. Bendavid, A.: Surface Coatings Technol. 163 (2003) 347.

Hotový, I., Huran, J., Búc, D., Srnánek, R., : Thermal stability of NbN films deposited on GaAs substrates Vacuum 50 (1998) 45.

      1. Piotrowska, A.: Proc. Mater. Res. Soc. Symp. 743 (2002) 807.
2. Han, Z.H.: Surface & Coatings Techn. 179 (2004) 188.
#     3. Han, Z.-H.: J. Shanghai Jiaotong Univ. 38 (2004) 120.
4. Du, X.-K.: Chinese J. Aeronautics 20 (2007) 140.
5. Koscielska, B.: J. Non-Crystalline Solids 354 (2008) 4349.
6. Linde AV.: Mater. Research Bull. 44 (2009) 1025.
7. Yuzephovich, O.I.: Low Temp. Phys. 36 (2010) 1058.
8. Farha, A.H.: Applied Surface Sci 258 (2011) 1613.
9. Farha, A.H.: Advanced Mater. Research. 445 (2012) 667.
10. Farha, A.H.: AIP Conf. Proc. 1687 (2015) 020003.
#   11. Hu, H.: Zhenkong Kexue yu Jishu Xuebao/J. Vacuum Sci Technol. 36 (2016) 80.
#    12. Yu, L., Sun, C., Xu, J.: Zhenkong Kexue yu Jishu Xuebao/J. Vacuum Sci Technol. 36 (2016) 377.

Huran, J., Hrubčín, L., Kobzev, A., and Liday, J.: Properties of amorphous silicon carbide films prepared by PECVDtechnology Vaccum 47 (1996) 1223.

1. Mccurdy, P.R.: J. Vacuum Sci Technol. A 17 (1999) 2475.
2. Nainaparampil, J.J.: J. Vacuum Sci Technol. A 17 (1999) 909.
3. Kikuchi, N.: Surface Coatings Technol. 149 (2002) 76.
4. Melinon, P.: Phys. Rev. B 65 (2002) 125321.
5. An, Z.H.: J. Vacuum Sci Technol. B 21 (2003) 1375.
6. Bau, S.: Proc. 3rd World Conf. Photovoltaic Energy Conversion 2003. P. 1178.
7. An, Z.H.: Thin Solid Films 447 (2004) 153.
8. Poon, R.W.Y.: Biomaterials 26 (2005) 2265.
9. Lin, G.-R.: J. Electrochem. Soc. 159 (2012) K35.
10. Li, M.: Applied Surface Sci 258 (2012) 3074.
11. Lo, T.-C.: J. Non-Crystall. Solids 358 (2012) 2126.
12. Cheng, C.-H.: Optics InfoBase Conf. Papers 2014. OSA ISBN 155752999X.
13. Cheng, C.-H.: Sci Rep 5 (2015) 16463.
14. Cheng, C.-H.: J. Mater. Chem. C 3 (2015) 10164.
15. Wu, C.-L.: River Publ. Ser. Optics Photon. 1 (2016) 179.
16. Deku, F.: J. Biomed. Mater. Research B 107 (2019) 1654.

Huran, J., Kobzev, A.P., Šafránková,  J., Hotový, I.: Properties of amorphous thin  films prepared by  plasma enhanced chemical  vapour deposition. In: 9th Conf. Semicond. Insulat. Mater. Toulouse 1996. IEEE 1996. ISBN:0-7803-3179-6, pp. 249-252.

1. Tulic, S.: RSC Adv. 10 (2020) 8224.

Korenev, S., Huran, J., Kobzev, A., : Surface modification of SiC thin films by pulsed electron and ion beams, IEEE Semicond. and Semi-Insulating Materials Conf. SIMC. (1996) 253-256. (Not IEE SAS).

#    1. Hao, S.: Current Applied Phys. 1 (2001) 203.

Hrubčín, L., Huran, J., Šándrik, R., Kobzev, A., Shirokov, D., : Application of the ERD method for hydrogen determination in silicon (oxy)nitride thin films prepared by ECR plasma deposition Nuclear Instrum. Methods in Phys. Research B 85 (1994) 60.

      1. Dreer, S.: Mikrochimica Acta 130 (1999) 281.
2. Dreer, S.: Pure Applied Chemis. 76 (2004) 1161.
3. Didyk, A.Yu.: Doklady Phys. 57 (2012) 7.
#    4. Didyk, A.Y.: Phys. Particles Nuclei Lett. 9 (2012) 253.
#    5. Didyk, A.Y.: Phys. Particles Nuclei Lett. 9 (2012) 186.
#    6. Didyk, A.Y.: Phys. Particles Nuclei Lett. 9 (2012) 80.
#    7. Didyk, A.Y.: Phys. Particles Nuclei Lett. 9 (2012) 86.
#    8. Didyk, A.Y.: Phys. Particles Nuclei Lett. 9 (2012) 96.
#    9. Didyk, A.Y.: J. Surface Investigation 8 (2014) 814.
10. Didyk, A. Y.: J. Surface Investigation 9 (2015) 859.

Hotový, I., Huran, J., : Properties of NbN films prepared by reactive magnetron sputtering Physica Status Solidi A 137 (1993) K25.

     1. Siebolt, T.: Phys. Rev. B 51 (1995) 6328.
2. Hiroshima, Y.: Japan. J. Applied Phys. 35 (1996) 4021.

Szulényi, F., Huran, J., : Physical properties of plasma deposited silicon nitride layers, Acta Physica Slovaca 41 (1991) 5.

        1. Tompkins, H.G.: Surface Interface Anal. 35 (2003) 136.

Handke, R., Haščík, Š., Huran, J., : Plasma etching of deep Si-trencheswith CBrF3 and dilutions Acta Phys. Slovaca 41 (1991) 122.

      1. Frank, W.E.: J. Electrochem. Soc. 140 (1993) 490.

Huran, J., Szulényi, F., Lalinský, T., Liday, J., Fapšo, L., : The silicon nitride layers prepared by PE CVD for GaAs IC technology. In: Proc. 3rd Conf. Phys. Technol. GaAs other III-V Semicond. Ed. P.Kordoš. Zürich: Trans. Tech. Publ. 1989. P. 161.

        1. Tompkins, H.G.: Surface Interface Anal. 35 (2003) 136.