Ing. Kuzmík Ján, DrSc.

Stoklas, R., Hasenőhrl, S., Dobročka, E., Gucmann, F., and Kuzmík, J.:  Electron transport properties in thin InN layers grown on InAlN, Mater. Sci  Semicond. Process. 155 (2023) 107250.

1. He, Z.: Vacuum 220 (2024) 112833.

Šichman, P., Stoklas, R., Hasenöhrl, S., Gregušová, D., Ťapajna, M., Hudec, B., Haščík, Š., Hashizume, T., Chvála, A., Šatka, A., and Kuzmík, J.: Vertical GaN transistor with semi-insulating channel, Physica Status Solidi (a) 220 (2023) SI2200776.

1. Woo, K.: J. Phys.-Mater. 7 (2024) 022003.

Kuzmík, J., Adikimenakis, A., Ťapajna, M., Gregušová, D., Haščík, Š., Dobročka, E., Tsagaraki, K., Stoklas, R., and Georgakilas, A.: InN: breaking the limits of solid-state electronics, AIP Adv. 11 (2021) 125325.

1. Damas, G.B.: J. Chem. Phys. 158 (2023) 174313.
2. Loo, C.C.: Mater. Character. 205 (2023) 113279.
3. Enayati, H.: Crystals 14 (2024) 105.

Stoklas, R., Chvála, A., Šichman, P., Hasenöhrl, S., Haščík, Š., Priesol, J., Šatka, A., and Kuzmík, J.: Analysis and modeling of vertical current conduction and breakdown mechanisms in semi-insulating GaN grown on GaN: role of deep levels, IEEE Trans. Electron Dev. 68 (2021) 2365.

1. Kim, H.: J. Electron. Mater. 50 (2021) 6688.
2. Qin, Y.: J. Phys. D 56 (2023) 093001.
3. Liu, B.: Inter. J. Numeric. Modell.-Electron. Networks Dev. Fields 37 (2024) Iss. 2.

Chauhan, P., Hasenöhrl, S., Vančo, Ľ., Šiffalovič, P., Dobročka, E., Machajdík, D., Rosová, A., Gucmann, F., Kováč, J.jr., Maťko, I., Kuball, M., and Kuzmík, J.: A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: A complete depth-resolved investigation, CrystEngComm 22 (2020) 130-141.

1. Chen, W.C.: Surface Topography-Metrol. Propert. 11 (2023) 024002.

Adikimenakis, A., Chatzopoulou, P., Dimitrakopulos, G. P., Kehagias, Th., Tsagaraki, K., Androulidaki, M., Doundoulakis, G., Kuzmík, J., and Georgakilas, A.: Correlation of threading dislocations with the electron concentration and mobility in InN heteroepitaxial layers grown by MBE, ECS J. Solid State Sci Technol. 9 (2020)  015006.

1. Wang, S.: Coatings 10 (2020) 1185.
2. Pérez-Caro, M. .: J. Applied Phys. 128 (2020) 215304.
3. Lai, F.I.: Catalysts 11 (2021) 886.
4.  Kudryavtsev, K.E.: ECS J. Solid State Sci Technol. 11 (2022) 014003.
5. Sakakita, H.: Applied Mater. Today 27 (2022) 101489.
6. Feng, Z.C.: J. Vacuum Sci Technol. A 41 (2023) 053401.
7. Loo, C.C.: Mater. Character. 205 (2023) 113279.

Chauhan, P., Hasenöhrl, S., Minj, A., Chauvat, M.P., Ruterana, P., and Kuzmík, J.: Growth evolution of N-polar Indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer, Applied Surface Sci 502 (2020) 144086.

1. Chen, L.: Crystal Growth Design 21 (2021) 2911.
2. Shih, H.J.: J. Alloys Comp. 890 (2022) 161797.

Šichman, P., Hasenöhrl, S., Stoklas, R., Priesol, J., Dobročka, E., Haščík, Š., Gucmann, F., Vincze, A., Chvála, A., Marek, J., Šatka, A., and Kuzmík, J.: Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure, Mater. Sci Semicond. Process. 118 (2020) 105203.

1. Mochizuki, K.: Japan. J. Applied Phys. 60 (2021) 018002.
2. Pan, Y.: Inter. J. Energy Res. 45 (2021) 15512.
3. Qin, Y.: J. Phys. D 56 (2023) 093001.

Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., and Kuzmík, J.: Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs, Applied Surface Sci 528 (2020) 146824.

1. Tian, Y.: Inter. J. Electrochem. Sci 15 (2020) 12682.

Adikimenakis, A., Chatzopoulou, P., Dimitrakopulos, G. P., Kehagias, Th., Tsagaraki, K., Androulidaki, M., Doundoulakis, G., Kuzmík, J., and Georgakilas, A.: Correlation of threading dislocations with the electron concentration and mobility in InN heteroepitaxial layers grown by MBE, ECS J. Solid State Sci Technol. 9 (2020)  015006.

1. Wang, S.: Coatings 10 (2020) 1185.
2. Pérez-Caro, M. .: J. Applied Phys. 128 (2020) 215304.

Gregušová, D., Tóth, L., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Cora, I., Fogarassy, Z., Stoklas, R., Seifertová, A., Blaho, M., Laurenčíková, A., Oyobiki, T., Pécz, B., Hashizume, T., and Kuzmík, J.: InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region, Japan. J. Applied Phys. 58 (2019) SCCCD21.

1. Biswas, D.: Mater. Sci Semicond. Process. 135 (2021) 106109.

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, Mater. Sci in Semicond Process.  91 (2019) 356-361.

1. Nguyen, D.D.: J. Applied Phys. 127 (2020) 094501.
2. Kim, H.: IEEE Access 10 (2022) 68724.
3. Hsieh, H.J.: Mater. Sci Semicond. Process. 169 (2024) 107908.

Chauhan, P., Hasenöhrl, S., Dobročka, E., Vančo, Ľ., Stoklas, R., Kováč, J., Šiffalovič, P., and Kuzmík J.: Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer, Applied Surface Sci 470 (2019) 1-7.

1. Bangolla, H.K.: Nanoscale Adv. 4 (2022) 4886.

Chvála, A., Nagy, L., Marek, J., Priesol, J., Donoval, D., Šatka, A., Blaho, M., Gregušová, D., and Kuzmík, J.: Device and circuit models of monolithic InAlN/GaN NAND and NOR logic cells comprising D- and E-mode HEMTs, J. Circuits, Systems Computers 28 (2019) 1940009.

1. Lv, Z.: IEICE Electron. Express 18 (2021) 20.

Kučera, M., Adikimenakis, A., Dobročka, E., Kúdela, R., Ťapajna, M., Laurenčíková, A., Georgakilas, A., and Kuzmík, J.: Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates, Thin Solid Films 672 (2019) 114-119.

1. Andreev, B.A.: Semiconductors 53 (2019) 1357.
2. Cross, G. B.: J. Crystal Growth 536 (2020) 125574.
3. Wang, S.: Coatings 10 (2020) 1185.
4. Damas, G.B.: Applied Surface Sci 592 (2022) 153290.
#    5. Cao, B.: Adv. Function. Mater. 32 (2022) 2110715.

Hasenöhrl, S., Chauhan, P., Dobročka, E., Stoklas, R., Vančo, Ľ., Veselý, M., Bouazzaoui, F., Chauvat, M.-P., Reterana, P., and Kuzmík, J.: Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures, Applied Phys. Express 12 (2019) 014001.

1. Murugapandiyan, P.: J. Electronic Mater. ‏49 (2020) SI524.

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, Mater. Sci in Semicond Process.  91 (2019) 356-361.

1. Duong, D.N.: J. Applied Phys. 127 (2020) 094501.

Chauhan, P., Hasenöhrl, S., Dobročka, E., Chauvat, M.-P., Minj, A., Gucmann, F., Vančo, Ľ., Kováč, J.jr., Kret, S., Ruterana, P., Kuball, M., Šiffalovič, P., and Kuzmík, J.: Evidence of relationship between strain and In-incorporation: growth of N-polar In-rich InAlN buffer layer by OMCVD, J. Applied Phys. 125 (2019) 105304.

1. Biswas, D.: J. Applied Phys. 125 (2019) 225707.
2. Toprak, A.: Mater. Res. Express 8 (2021) 126302.
#     3. Wang, X.: Zhenkong Kexue yu Jishu Xuebao/J. Vacuum Sci Technol. 42 (2022) 151.

Blaho, M., Gregušová, D., Haščík, Š., Kuzmík, J., Chvála, A., Marek, J., and Šatka, A.: Technology and performance of E/D-mode InAlN/GaN HEMTs for mixed-signal electronics. In 22nd Inter. Microwave Radar Conf. (MIKON). Poznan: Warsaw Univ. Technol. 2018, p. 440-441. ISBN 978-83-949421-1-3.

#       1. Saglam, B.: IEEE Energy Conv. Congress & Exposition – ECCE 2022, pp. 1-6.

Gucmann, F., Ťapajna, M., Pohorelec, O., Haščík, Š., Hušeková, K., and Kuzmík, J.: Creation of two-dimesional electron gas and role of surface donors in III-N metal-oxide-semiconductor high-electron mobility transistors, Phys. Status Solidi A  215 (2018) 1800090.

1. Song, K.: J. Phys. D 53 (2020) 345107.
2. Shi, Y.: IEEE Trans. Electron Dev. 67 (2020) 2290.
3. Duong D.N.: J. Applied Phys. 127 (2020) 094501.
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Ťapajna, M., Vincze, A., Noga, P., Dobrovodsky, J., Šagátová, A., Hasenöhrl, S., Gregušová, D., and Kuzmík, J.: Determination of secondary-ions yield in SIMS depth profiling of Si, Mg, and C ions implanted GaN epitaxial layers. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 141-144.

1. Senevirathna, M.K.I.: J. Vacuum Sci Technol. B 38 (2020) 044002.
2. Hajek, F.: J. Lumin. 236 (2021) 118127.
3. Lagzdina, E.: Nuclear Instrum. Methods Phys. Res. B 538 (2023) 218.

Matys, M., Nishiguchi, K., Adamowicz, J.B., Kuzmík, J., and Hashizume, T.: Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors, J. Applied Phys. 124 (2018) 224502.

1. Mazumder, S.: Semicond. Sci Technol. 36 (2021) 095003.
2. Son, D.H.: Solid-State Electr. 184 (2021) 108079.
3. Glinkowski, M.: Acta Phys. Polonica A 140 (2021) 192.
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Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, I.V., Ťapajna, M., Fröhlich, K., Haščík, Š., Gregor, M., and Kuzmík, J.: Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition, Applied Surface Sci 461 (2018) 255-259.

1. Ber, E.: IEEE Trans. Electron Dev. 66 (2019) 2100.
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Chvála, A., Nagy, L., Marek, J., Priesol, J., Donoval, D., Blaho, M., Gregušová, D., Kuzmík, J., and Šatka, A.: Characterization of monolithic InAlN/GaN NAND logic cell supported by circuit and device simulations, IEEE Trans. Electron Devices 65 (2018) 2666-2669.

1. Guan, H.: Coatings 9 (2019) 318.
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Chvála, A., Nagy, L., Marek, J., Priesol, J., Donoval, D., Vilhan, M., Blaho, M., Gregušová, D., Kuzmík, J., and Šatka, A.: Simulation analysis of InAlN/GaN monolithic NAND logic cell. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 167-171.

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Hashizume, T., Nishiguchi, K., Kaneki, S., Kuzmik, J., and Yatabe, Z.: State of the art on gate insulation and surface passivation for GaN-based power HEMTs, Mater. Sci in Semicond. Process. 78 (2018) 85-95.

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41. Matys, M.: Applied Phys. Lett. 118 (2021) 093502.
42. Laukkanen, P.: Applied Phys. Rev. 8 (2021) 011309.
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Gregušová, D., Blaho, M., Haščík, Š., Šichman, P., Laurenčíková, A., Seifertová, A., Dérer, J., Brunner, F., Wurfl, J., and Kuzmík, J.: Polarization-engineered n+GaN/InGaN/AlGaN/GaN normally-off MOS HEMTs, Physica Status Solidi a 214 (2017) 1700407.

1. Tokuda, H.: Japan. J. Applied Phys. 59 (2020) 084002.
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Graff, A., Simon-Najasek, M., Altmann, F., Kuzmík, J., Gregušová, D., Haščík, Š., Jung, J., Baur, T., Grunenputt, J., and Blanck, H.: High resolution physical analysis of ohmic contact formation at GaN-HEMT devices, Microelectr. Reliab. 76-77 (2017)  338.

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Kuzmík, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M., Kúdela, R., Androulidaki, M., Pogany, D., and Georgakilas, A.: Current conduction mechanism and electrical break-down in InN grown on GaN, Applied Phys. Lett. 110 (2017) 232103.

1. Shen, L.: Applied Surface Sci 476 (2019) 418.

Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Toth, L., Pecz, B., Micusik, M., Brunner, F., and Kuzmík, J.: Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties, Applied Surface Sci 426 (2017) 656-661.

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Ťapajna, M., Válik, L., Gucmann, F., Gregušová, D., Fröhlich, K., Haščík, Š., Dobročka, E., Tóth, L., Pécz, B., and Kuzmík, J.: Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density, J. Vacuum Sci Technol. B 35 (2017) 01A107.

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