Ing. Osvald Jozef, DrSc.

Osvald, J., Lalinský, T., and Vanko, G.: High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes, Applied Surface Sci 461 (2018) 206.

1. Sun, S.: Mater. Sci Semicond. Process. 114 (2020) 105084.
2. Turut, A.: Turkish J. Phys.‏ 44 (2020)‏ 302.
3. Hou, C.: Applied Phys. Lett. 117 (2020) 203502.
4. Ozdemir, M.C.: Mater. Sci Semicond. Process. 125 (2021) 105629.

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Zápražný, Z., Sedlačková, K., Sekáčová, M., Dubecký, F., Skuratov, V.A., Korytár, D., and Nečas, V.: Schottky barrier detectors based on high quality 4H-SIC semiconductor: electrical and detection properties, Applied Surface Sci 461 (2018) 276-280.

1. Zhou, Y.: Carbon 148 (2019) 387.
2. Dong, P.: IEEE Access 7 (2019) 170385.
3. Sarac, Y.: J. Alloys Comp. 824 (2020) 153899.
4. Xie, X.-M.: Trans. Nonferr. Metals Soc China‏ 30 (2020)‏ 3058.

Osvald, J.: Fast and slow traps in Al2O3/(GaN)/AlGaN/GaN heterostructures studied by conductance technique, Physica E 97 (2018) 126-129.

1. Taoka, N.: Semicond. Sci Technol. 34 (2019) 025009.
2. Kim, H.: Optik 184 (2019) 527.

Osvald, J.: Interface traps contribution to capacitance of Al2O3/(GaN)AlGaN/GaN heterostructures at low frequencies, Physica E 93 (2017) 238-242.

1. Ghosh, J.: Microelectr. Engn. 216 (2019) 111097.
2. Luo, X. J.: J. Alloys Comp. 814 (2020) UNSP 152185.

Osvald, J., Stoklas, R., and Kordoš, P.: Low- and high-frequency capacitance of aluminum gallium nitride/gallium nitride heterostructures with interface traps, Mater. Sci in Semicond. Process. 31 (2015) 525-529.

1. Ziane, A.: J. Electron. Mater. 47 (2018) 5283.
2. Hoshii, T.: Japan. J. Applied Phys. 58 (2019) 061006.

Osvald, J.Back-to-back connected asymmetric Schottky diodes with series resistance as a single diode, Phys. Status Solidi A 212 (2015) 2754-2758.

1. Qiao, S.: ACS Nano 10 (2016) 8233.
2. Banerjee, A.: European Phys. J.-Applied Phys. 80 (2017) 20101.
3. Lin, X.: Nature Comm. 8 (2017) 613.
4. Chou, S.-Y.: ACS Nano 11 (2017) 11368.
5. Hajzus, J.R.: Nanoscale 10 (2018) 319.
6. Nouchi, R.: Adv. Mater. Interf. 5 (2018) 1801261.
7. de Melo, C.: ACS Applied Mater. Interf. 10 (2018) 40958.
8. Qiao, S.: ACS Applied Mater. Interf. 10 (2018) 35344.
9. Dai, M.: ACS Nano 12 (2018) 8739.
#    10. Rahman, S.F.A.: Telkomnika (Telecomm. Comput. Electron. Control) 17 (2019) 2427.
11. Parsonnet, E.: Phys. Rev. Lett. 125 (2020) 067601.
12. Rodriguez, J.R.: Applied Phys. Lett. 117 (2020) 052901.
13. Wang, Z.: Physica Status Solidi A 217 (2020) 1901018.
14. Miranda, E.: IEEE Trans. Nanotechnol. 19 (2020)‏ 297.
15. Kumar, N.: Physica B 599 (2020) 412547.
16. Li, S.: NPJ 2D Mater. Appl.‏ 5 (2021) 1.

Osvald, J., Stoklas, R., and Kordoš, P.: Extraction of interface trap density of Al2O3/AlGaN/GaN MIS heterostructure capacitance, Phys. Status Solidi B 252 (2015) 996-1000.

1. Suria, A.J.: Semicond. Sci Technol. 31  (2016) 115017.
2. Yatabe, Z.: J. Phys. D 49  (2016) 393001.
3. Nishiguchi, K.: Japan. J. Applied Phys. 56 (2017) 101001.
4. Hashizume, T.: Mater. Sci Semicond. Process. 78 (2018) 85.
5. Kuzmin, M.: Adv. Mater. Interfaces 6 (2019) 1802033.
6. Ouduangvilai, K.: J. Semicond. Technol. Sci 19 (2019) 540.

Osvald, J.: Influence of interface deep traps on capacitance of AlGaN/GaN heterojunctions In: Phys. Semicond. Devices. Eds. V.K. Jain, A. Verma. Heidelberg: Springer 2014. ISBN 978-3-319-03002-9. P. 215-217.

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2. Verma, S.: Superlatt. Microstr. 119 (2018) 181.
3. Verma, S.: J. Comput. Electron. 17 (2018) 256.

Kaushal, P., Chand, S., and Osvald, J.Current–voltage characteristics of Schottky diode simulated using semiconductor device equations, Inter. J. Electron. 100 (2013) 686-698.

1. Biyikli, N.: Physica Scripta 89 (2014) 095804.
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3. Aydin, H.: J. Alloys Comp. 625 (2015) 18.
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5. Donarelli, M.: Proc. 18th AISEM Annual Conf. 2015. Art. no. 7066814.
6. Tataroglu, A.: Dyes Pigments 132 (2016) 64.
7. Ejderha, K.: Surface Rev. Lett. 24 (2017) 1750052.
8. Khairir, N.S.: Surfaces Interf. 6 (2017) 229.
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10. Tataroglu, A.: Silicon 10 (2018) 683.
11. Fritah, A.: Inter. Conf. Comm. Electr. Engn. – ICCEE 2018, p. 10.
12. Zeghdar, K.: Japan. J. Applied Phys. 58 (2019) 014002.
13. Baltakesmez, A.: Vacuum 168 (2019) UNSP 108825.
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17. Nafradi, B.: Proc. National Acad. Sci USA 117 (2020)‏ 6417.
18. Turut, A.: Turkish J. Phys.‏ 44 (2020)‏ 302.

Osvald, J.Interface electron traps as a source of anomalous capacitance in AlGaN/GaN heterostructures, J. Electr. Mater. 42 (2013) 1184-1189.

1. Cetinkaya, H. G.: J. Alloys Compounds 721 (2017) 750.
2. Cetinkaya, H. G.: J. Alloys Compounds 728 (2017) 896.

Lalinský, T., Vallo, M., Vanko, G., Dobročka, E., Vincze, A., Osvald, J., Rýger, I., and Dzuba, J.: Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation, Applied Surface Sci 283 (2013) 160-167.

        1. Jung, S.M.: Semicond. Sci Technol.  30 (2015) 075012.

Chand, S., Kaushal, P., and Osvald, J.Numerical simulation study of current-voltage characteristic of a Schottky diode with inverse doped surface layer, Mater. Sci in Semicond. Process. 16 (2013) 454-460.

1. Biyikli, N.: Physica Scripta 89 (2014) 095804.
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4. Kuang, Y.: Optical Quantum Electron. 48 (2016) 199.
5. Ejderha, K.: Silicon 9 (2017) 395.

Osvald, J.Simulation of the influence of interface states on capacitance characteristics of insulator/AlGaN/GaN heterojunctions, Phys. Status Solidi A 210 (2013) 1340-1344.

1. Stoklas, R.: Semicond. Sci Technol.  29 (2014) 045003.
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5. El-Amin, A. A.: Silicon 9 (2017) SI47.
6. Panda, D.K.: AEU-Inter. J. Electron. Comm.82 (2017) 467.

Osvald, J.Surface states influence on capacitance properties of dielectric/AlGaN/GaN heterostructures, Japan. J. Applied Phys. 52 (2013) 08JN09.

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Chand, S., Kaushal, P., and Osvald, J.: Effect of inverse doped surface layer in Schottky barrier modification: a numerical study, J. Electr. Mater. 41 (2012) 3387-3392.

1. Baltakesmez, A.: Vacuum 168 (2019) UNSP 108825.

Osvald, J.: Interface traps in insulator/AlGaN/GaN heterostructure capacitors. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 59-62.

        1. Ma, X.: Physica Status Solidi A 212 (2015) 2928.

Lalinský, T., Vanko, G., Vincze, A., Haščík, Š., Osvald, J., Donoval, D., Tomáška, M., and Kostič, I.: Effect of fluorine interface redistribution on performance of AlGaN/GaN HEMTs, Microelectr. Engn. 88 (2011) 166-169.

1. Ketteniss, N.: IEEE Electron Device Lett. 33 (2012) 519.
2. Bisi, D.: Europ. Solid-State Device Research Conf. 2013, p. 61.
3. Loghmany, A.: Solid-State Electron. 103 (2015) 162.
4. He, Y.: IEEE SSL China – IFWS 2016. P. 116.

Osvald, J.Influence of deep levels on capacitance-voltage characteristics of AlGaN/GaN heterostructures. J. Applied Phys. 110 (2011) 073702.

1. Ho, J.-W.: 2012 38TH IEEE Photovoltaic Spec. Conf. (PVSC) (2012) P. 1898.
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Osvald, J., Lalinský, T., Vanko, G., Haščík, Š., and Vincze, A.: CV characterization of SF6 plasma treated AlGaN/GaN heterostructures, Microelectr. Engn. 87 (2010) 2208-2210.

1. Wang, R.: J. Phys. D 51 (2018) 065108.
2. Wang, R.: Phys. Rev. Applied 11 (2019) 054021.

Osvald, J., : Influence of interface states on C-V characteristics of AlGaN/GaN heterostructures. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 167-170.

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Osvald, J.Influence of AlGaN/GaN heterojunction parameters on its capacitance-voltage characteristics, J. Applied Phys. 106 (2009) 013708.

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Osvald, J.Temperature dependence of barrier height parameters of inhomogeneous Schottky diodes, Microelectron. Engn. 86 (2009) 117-120.

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25. El-Menyawy, E.M.: J. Mater. Sci-Mater. Electron. 25 (2014) 3939.
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Srnánek, R., Irmer, G., Donoval, D., Osvald, J., McPhail, D., Christoffi, A., Sciana, B., Radziewicz, D., Tlaczala, M., : Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn δ-doped GaAs structures. Microelectr. J. 39 (2008) 1439-1443.

            1. Sanson, A.: J. Raman Spectros. 45 (2014) 197.

Osvald, J.Numerical analysis of gate leakage current in AlGaN Schottky diodes. Applied Surface Sci 255 (2008) 793-795.

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Osvald, J.: Simulation of influence of AlGaN/GaN heterojunction parameters on its capacitance curves. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 319-322.

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Osvald, J.Numerical simultation of tunneling current in GaN Schottky diodes. J. Applied Phys. 101 (2007) 103701.

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Osvald, J.Polarization effects and energy band diagram in AlGaN/GaN heterostructures. Applied Phys. A 87 (2007) 679-682.

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Osvald, J.Influence of lateral current spreading on the apparent barrier parameters of inhomogeneous Schottky diodes, J. Applied Phys. 99 (2006) 033708.

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Osvald, J.Intersecting behaviour of nanoscale Schottky diodes I-V curves, Solid State Comm. 138 (2006) 39-42.

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Osvald, J.Series resistance influence on intersecting behaviour of inhomogeneous Schottky diodes I–V curves. Solid-State Electr. 50 (2006) 228-231.

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Osvald, J.Ohmic contacts to moderately doped semiconductors—are they really Ohmic or low-barrier Schottky contacts?, Semicond. Sci Technol. 20 (2005) 611-614.

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