Ing. Osvald Jozef, DrSc.

Osvald, J., Hrubčín, L., and Zaťko, B.: Temperature dependence of electrical behaviour of inhomogeneous Ni/Au/4H–SiC Schottky diodes, Mater. Sci Semicond. Process. 140 (2022) 106413.

1. Deniz, AR.: J. Mater. Sci-Mater. Electr. ‏ 33 (2022) 26954.
2. Efeoglu, H.: J. Electron. Mater. 52 (2023) 1410.
3. Capan, I.: Diamond Relat. Mater. 137 (2023) 110072.
4. Deniz, A.R.: Microelectron. Reliab. 147 (2023) 115114.
5. Capan, I.: Materials 17 (2024) 1147.

Osvald, J.: Intersection of 4H-SiC Schottky diodes I–V curves due to temperature dependent series resistance, Semicond. Sci Technol. 37 (2022) 125003.

1. Saadaoui, S.: Brazil. J. Phys. 53 (2023) 26.

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Kováčová, E., Halahovets, Y., Rozov, S.V., and Sandukovskij, V.G.: Study of Schottky barrier detectors based on high quality 4H-SiC epitaxial layer with different thickness, Applied Surface Sci 536 (2021) 147801.

1. Ozdemir, A.F.: Physica B 616 (2021) 413125.
2. Gullu, H.H.: J. Electron. Mater. 50 (2021) 7044.
3. Wang, X.: J. Semicond. 42 (2021) 112802.
4. Kacha, A.H.: Semiconductors 55 (2021) S54.
5. Gao, R.: Sensors Actuators A 333 (2022) 113241.
6. Li, X.X.: J. Mater. Res. Technol.-JMR&T 18 (2022) 2152.
7. Capan, I.: Electronics 11 (2022) 532.
8. Napoli, M.D.: Front. Phys. 10 (2022) 898833.
9. Bernat, R.: Materials 16 (2023) 2202.
10. Huang, Z.: J. Mater. Sci-Mater. Electron. 34 (2023) 1046.
11. Mandal, K.C.: IEEE Trans. Nuclear Sci 70 (2023) 823.
12. Capan, I.: Diamond Relat. Mater. 137 (2023) 110072.
13. Long, Z.: Nuclear Instr. Methods in Phys. Res. A 1056 (2023) 168585.
14. Capan, I.: Materials 17 (2024) 1147.

Osvald, J., Hrubčín, L., and Zaťko, B.: Schottky barrier height inhomogeneity in 4H-SiC surface barrier detectors, Applied Surface Sci 533 (2020) 147389.

1. Feng, B.Y.: Applied Phys. Lett. 118 (2021) 181602.
2. Ozdemir, A.F.: Physica B 616 (2021) 413125.
3. Huang, L.Q.: Japan. J. Applied Phys. 61 (2022) 014003.
4. Yan, Q.L.: Applied Phys. Lett. 120 (2022) 092106.
5. Duman, S.: Sensors Actuators A 338 (2022) 113457.
6. Mallik, G.: Optic. Mater. 144 (2023) 114306.

Osvald, J.: Simulation of structure parameters’influence on the threshold voltage of normally-off p-GaN/AlGaN/GaN transistors, Phys. Status Solidi a 216 (2019) 1900453.

1. Duan, B.X.: IEEE Trans. Electron Dev. 69 (2022) 1200.

Osvald, J., Lalinský, T., and Vanko, G.: High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes, Applied Surface Sci 461 (2018) 206.

1. Sun, S.: Mater. Sci Semicond. Process. 114 (2020) 105084.
2. Turut, A.: Turkish J. Phys.‏ 44 (2020)‏ 302.
3. Hou, C.: Applied Phys. Lett. 117 (2020) 203502.
4. Ozdemir, M.C.: Mater. Sci Semicond. Process. 125 (2021) 105629.
5. Turut, A.: Turkish J. Phys.‏ 45 (2021)‏ 268.
#     6. Sreejith, S.: Emerging Low-Power Semiconductor Devices. CRC Press 2022, pp. 127-152. ISBN 978-100-324-077-8.
7. Kumar, A.: Micro Nanostruct. 183 (2023) 207665.

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Zápražný, Z., Sedlačková, K., Sekáčová, M., Dubecký, F., Skuratov, V.A., Korytár, D., and Nečas, V.: Schottky barrier detectors based on high quality 4H-SIC semiconductor: electrical and detection properties, Applied Surface Sci 461 (2018) 276-280.

1. Zhou, Y.: Carbon 148 (2019) 387.
2. Dong, P.: IEEE Access 7 (2019) 170385.
3. Sarac, Y.: J. Alloys Comp. 824 (2020) 153899.
4. Xie, X.-M.: Trans. Nonferr. Metals Soc China‏ 30 (2020)‏ 3058.
5. Jiang, L.: Nuclear Instr. Methods in Phys. Res. A 1048 (2023) 167917.

Osvald, J.: Fast and slow traps in Al2O3/(GaN)/AlGaN/GaN heterostructures studied by conductance technique, Physica E 97 (2018) 126-129.

1. Taoka, N.: Semicond. Sci Technol. 34 (2019) 025009.
2. Kim, H.: Optik 184 (2019) 527.

Osvald, J.: Interface traps contribution to capacitance of Al2O3/(GaN)AlGaN/GaN heterostructures at low frequencies, Physica E 93 (2017) 238-242.

1. Ghosh, J.: Microelectr. Engn. 216 (2019) 111097.
2. Luo, X. J.: J. Alloys Comp. 814 (2020) UNSP 152185.
3. Viswanathan, S.: Inter. J. Numer. Modell.-Electron. Networks Dev. Fields 35 (2022) 2936.
4. Fiorenza, P.: Applied Surface Sci 579 (2022) 152136.
5. Hasan, S.: Crystals 13 (2023) 231.
#     6. Chanchal: Comm. Computer Inf. Sci 1687 (2022) 76.

Osvald, J., Vanko, G., Chow, L., Chen, N.C., and Chang, L.B.: Transition voltage of AlGaN/GaN heterostructure MSM varactor with two-dimensional electron gas,  Microelectron. Reliab. 78 (2017) 243–248.

1. Hsieh, Y.L.: Microelectron. Reliab. 142 (2023) 114905.

Osvald, J., Stoklas, R., and Kordoš, P.: Low- and high-frequency capacitance of aluminum gallium nitride/gallium nitride heterostructures with interface traps, Mater. Sci in Semicond. Process. 31 (2015) 525-529.

1. Ziane, A.: J. Electron. Mater. 47 (2018) 5283.
2. Hoshii, T.: Japan. J. Applied Phys. 58 (2019) 061006.
3. Mao, W.: Applied Phys. Express 15 (2022) 016504.
4. Lin, X.Y.: IEEE Trans. Electron Dev. 70 (2023) 537.

Osvald, J.: Back-to-back connected asymmetric Schottky diodes with series resistance as a single diode, Phys. Status Solidi A 212 (2015) 2754-2758.

1. Qiao, S.: ACS Nano 10 (2016) 8233.
2. Banerjee, A.: European Phys. J.-Applied Phys. 80 (2017) 20101.
3. Lin, X.: Nature Comm. 8 (2017) 613.
4. Chou, S.-Y.: ACS Nano 11 (2017) 11368.
5. Hajzus, J.R.: Nanoscale 10 (2018) 319.
6. Nouchi, R.: Adv. Mater. Interf. 5 (2018) 1801261.
7. de Melo, C.: ACS Applied Mater. Interf. 10 (2018) 40958.
8. Qiao, S.: ACS Applied Mater. Interf. 10 (2018) 35344.
9. Dai, M.: ACS Nano 12 (2018) 8739.
#    10. Rahman, S.F.A.: Telkomnika (Telecomm. Comput. Electron. Control) 17 (2019) 2427.
11. Parsonnet, E.: Phys. Rev. Lett. 125 (2020) 067601.
12. Rodriguez, J.R.: Applied Phys. Lett. 117 (2020) 052901.
13. Wang, Z.: Physica Status Solidi A 217 (2020) 1901018.
14. Miranda, E.: IEEE Trans. Nanotechnol. 19 (2020)‏ 297.
15. Kumar, N.: Physica B 599 (2020) 412547.
16. Li, S.: NPJ 2D Mater. Appl.‏ 5 (2021) 1.
17. Ortiz, W.: Nano Express 2 (2021) 010020.
18. Mao, SJ.: IEEE Trans. Electron Dev. 68 (2021) 1835.
19. Banerjee, A.: Physica B 618 (2021) 413142.
20. Zhang, M.: Nanoscale 13 (2021) 17147.
21. Labar, R.: J. Electron. Mater. 51 (2022) 223.
22. Park, S.: Applied Surface Sci 581 (2022) 152421.
23. Rhiger, D.R.: J. Electron. Mater. 51 (2022) SI4721.
24. Sun, T.Y.: Cell Rep. Phys. Sci 3 (2022) 100939.
25. Bhattacharya, G.: J. Phys. D 55 (2022) 435101.
26. Zhao, Q.H.: Nano Energy 108 (2023) 108238.
27. Oz, D.: ACS Photon. 10 (2023) 1783.
28. Zhang, Q.F.: J. Phys. D 56 (2023) 455101.
29. Banerjee, A.: J. Mater. Sci-Mater. Electron. 34 (2023) 1954.

Osvald, J., Stoklas, R., and Kordoš, P.: Extraction of interface trap density of Al2O3/AlGaN/GaN MIS heterostructure capacitance, Phys. Status Solidi B 252 (2015) 996-1000.

1. Suria, A.J.: Semicond. Sci Technol. 31  (2016) 115017.
2. Yatabe, Z.: J. Phys. D 49  (2016) 393001.
3. Nishiguchi, K.: Japan. J. Applied Phys. 56 (2017) 101001.
4. Hashizume, T.: Mater. Sci Semicond. Process. 78 (2018) 85.
5. Kuzmin, M.: Adv. Mater. Interfaces 6 (2019) 1802033.
6. Ouduangvilai, K.: J. Semicond. Technol. Sci 19 (2019) 540.
7. Viswanathan, S.: Inter. J. Numer. Modell.-Electron. Networks Dev. Fields 35 (2022) 2936.

Osvald, J.: Influence of interface deep traps on capacitance of AlGaN/GaN heterojunctions In: Phys. Semicond. Devices. Eds. V.K. Jain, A. Verma. Heidelberg: Springer 2014. ISBN 978-3-319-03002-9. P. 215-217.

1. Loan, S.A.: Electron. Lett. 52 (2016) 656.
2. Verma, S.: Superlatt. Microstr. 119 (2018) 181.
3. Verma, S.: J. Comput. Electron. 17 (2018) 256.
4. Ahmed, N.: Microelectron. J. 143 (2024) 106047.

Kaushal, P., Chand, S., and Osvald, J.: Current–voltage characteristics of Schottky diode simulated using semiconductor device equations, Inter. J. Electron. 100 (2013) 686-698.

1. Biyikli, N.: Physica Scripta 89 (2014) 095804.
2. Guzeldir, B.: J. Alloys Comp. 627 (2015) 200.
3. Aydin, H.: J. Alloys Comp. 625 (2015) 18.
4. Andrei, G.: Proc. 7th Inter. Conf. on Electron., Computers and Artificial Intellig. – ECAI 2015. Art. no. 7301251, p. P49.
5. Donarelli, M.: Proc. 18th AISEM Annual Conf. 2015. Art. no. 7066814.
6. Tataroglu, A.: Dyes Pigments 132 (2016) 64.
7. Ejderha, K.: Surface Rev. Lett. 24 (2017) 1750052.
8. Khairir, N.S.: Surfaces Interf. 6 (2017) 229.
9. Turut, A.: J. Optoelectron. Adv. Mater. 19 (2017) 424.
10. Tataroglu, A.: Silicon 10 (2018) 683.
11. Fritah, A.: Inter. Conf. Comm. Electr. Engn. – ICCEE 2018, p. 10.
12. Zeghdar, K.: Japan. J. Applied Phys. 58 (2019) 014002.
13. Baltakesmez, A.: Vacuum 168 (2019) UNSP 108825.
14. Kup, S.: Mater. Today-Proc. 18 (2019) SI1936.
15. Lewerenz, H.J.: RSC Energy Environment Ser. 22 (2019) 3.
16. Ziko, M.H.: Crystals 10 (2020)‏ 636.
17. Nafradi, B.: Proc. National Acad. Sci USA 117 (2020)‏ 6417.
18. Turut, A.: Turkish J. Phys.‏ 44 (2020)‏ 302.
#     19. Ziko, M.H.: Mater. Sci Forum 1004 MSF (2020)‏ 960.
#     20. Chatterjee, S.: Inter. J. Electron. Lett. 8 (2020)‏ 223.
#     21. Banerjee, S.N.: 4th Inter. Conf. Electron., Mater. Engn. Nano-Technol. – IEMENTech 2020, no. 9270092.
22. Kumar, A.: Solar Energy 220 (2021) 35.
23. Ejderha, K.: J. Electron. Mater. 50 (2021) 6741.
24. Basov, M.: Sensors Actuators A 331 (2021) 112930.
25. Li, Y.F.: J. Thermal Sci 31 (2022) 976.
#     26. Nagasai, R.K.K.B.: IEEE 5NANO 2022, pp. 1-4.
27. Ejderha, K.: J. Electron. Mater. 52 (2023) 1410.
#   28. Devi, A.V.N.: IEEE Inter. Conf. Emerg. Electron. ICEE 2022.
29. Baltakesmez, A.: Surfaces Interfaces 40 (2023) 103066.

Osvald, J.: Interface electron traps as a source of anomalous capacitance in AlGaN/GaN heterostructures, J. Electr. Mater. 42 (2013) 1184-1189.

1. Cetinkaya, H. G.: J. Alloys Compounds 721 (2017) 750.
2. Cetinkaya, H. G.: J. Alloys Compounds 728 (2017) 896.

Lalinský, T., Vallo, M., Vanko, G., Dobročka, E., Vincze, A., Osvald, J., Rýger, I., and Dzuba, J.: Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation, Applied Surface Sci 283 (2013) 160-167.

1. Jung, S.M.: Semicond. Sci Technol.  30 (2015) 075012.
2. Eisner, S.R.: IEEE Aerospace Conf. Proc. – AEROCONF 2021.
3. Eisner, S.R.: Applied Phys. Lett. 123 (2023) 152101.

Chand, S., Kaushal, P., and Osvald, J.: Numerical simulation study of current-voltage characteristic of a Schottky diode with inverse doped surface layer, Mater. Sci in Semicond. Process. 16 (2013) 454-460.

1. Biyikli, N.: Physica Scripta 89 (2014) 095804.
2. Kosec, G.: Engn. Analysis with Boundary Elements 50 (2015) 69.
3. Varma, T.: J. Nanoelectron. Optoelectron. 10 (2015) 761.
4. Kuang, Y.: Optical Quantum Electron. 48 (2016) 199.
5. Ejderha, K.: Silicon 9 (2017) 395.
#     6. Sreejith, S.: Emerging Low-Power Semiconductor Devices. CRC Press 2022, pp. 127-152. ISBN 978-100-324-077-8

Osvald, J.: Simulation of the influence of interface states on capacitance characteristics of insulator/AlGaN/GaN heterojunctions, Phys. Status Solidi A 210 (2013) 1340-1344.

1. Stoklas, R.: Semicond. Sci Technol.  29 (2014) 045003.
2. Yoon, Y.J.: J. Korean Phys. Soc 65 (2014) 1579.
3. Bakeroot, B.: J. Applied Phys. 116 (2014) 134506.
4. Molnar, M.: Applied Surface Sci 312 (2014) 157.
5. El-Amin, A. A.: Silicon 9 (2017) SI47.
6. Panda, D.K.: AEU-Inter. J. Electron. Comm.82 (2017) 467.

Osvald, J.: Surface states influence on capacitance properties of dielectric/AlGaN/GaN heterostructures, Japan. J. Applied Phys. 52 (2013) 08JN09.

       1. Colon, A.: Solid-State Electron. 99 (2014) 25.

Chand, S., Kaushal, P., and Osvald, J.: Effect of inverse doped surface layer in Schottky barrier modification: a numerical study, J. Electr. Mater. 41 (2012) 3387-3392.

1. Baltakesmez, A.: Vacuum 168 (2019) UNSP 108825.

Osvald, J.: Interface traps in insulator/AlGaN/GaN heterostructure capacitors. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 59-62.

        1. Ma, X.: Physica Status Solidi A 212 (2015) 2928.

Osvald, J.: Interface electron traps and capacitance characteristics of AlGaN/GaN. In: Proc. 18th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2012). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 121-124.

1. Song, Y.L.: Micromach. 12 (2021) 751.

Lalinský, T., Vanko, G., Vincze, A., Haščík, Š., Osvald, J., Donoval, D., Tomáška, M., and Kostič, I.: Effect of fluorine interface redistribution on performance of AlGaN/GaN HEMTs, Microelectr. Engn. 88 (2011) 166-169.

1. Ketteniss, N.: IEEE Electron Device Lett. 33 (2012) 519.
2. Bisi, D.: Europ. Solid-State Device Research Conf. 2013, p. 61.
3. Loghmany, A.: Solid-State Electron. 103 (2015) 162.
4. He, Y.: IEEE SSL China – IFWS 2016. P. 116.
*     5. Fornasiero, Q.: WOCSDICE EXMATEC 2021, p. 50.
6. Mauduit, C.: Microelectron. Engn. 277 (2023) 112020.

Osvald, J.: Influence of deep levels on capacitance-voltage characteristics of AlGaN/GaN heterostructures. J. Applied Phys. 110 (2011) 073702.

1. Ho, J.-W.: 2012 38TH IEEE Photovoltaic Spec. Conf. (PVSC) (2012) P. 1898.
2. Yang, Y.-N.: Acta Phys. Sinica 62 (2013) 177302.
3. Bera, L.K.: ECS Solid State Lett. 2 (2013) Q105.
4. Yang, G.: J. Applied Phys. 115 (2014)
5. Jia, C.H.: Applied Phys. Lett. 104 (2014) 043501.
6. Dogan, H.: Physica B 457 (2015) 48.
7. Zhao, M.: Chinese Phys. Lett. 32 (2015) 048501.
8. Ruzzarin, M.: IEEE Trans. Electron Dev. 65 (2018) 2778.
9. Wang, C.A.: J. Applied Phys. 123 (2018)134502.

Osvald, J., Lalinský, T., Vanko, G., Haščík, Š., and Vincze, A.: C–V characterization of SF6 plasma treated AlGaN/GaN heterostructures, Microelectr. Engn. 87 (2010) 2208-2210.

1. Wang, R.: J. Phys. D 51 (2018) 065108.
2. Wang, R.: Phys. Rev. Applied 11 (2019) 054021.
3. Fornasiero, Q.: J. Vacuum Sci Technol. B 41 (2023) 012202.

Osvald, J., : Influence of interface states on C-V characteristics of AlGaN/GaN heterostructures. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 167-170.

1. Kumar, M.: ECS Trans. 44 (2012) 1285.
2. Harmatha, L.: Applied Surface Sci 312 (2014) 102.
3. Mostefaoui, M.: J. Optoelectron. Adv. Mater. 16 (2014) 849.

Osvald, J.: Influence of AlGaN/GaN heterojunction parameters on its capacitance-voltage characteristics, J. Applied Phys. 106 (2009) 013708.

1. Ferng, Y.C.: Electrochem. Solid State Lett. 13 (2010) H350.
2. Zhang, J.: Rev. Sci Instrum. 81 (2010) 103704.
3. Tan, G.: Modern Phys. Lett. B 25 (2011) 1293.
4. Chen, Z.: Japan. J. Applied Phys. 50 (2011) 081001.
5. Li, L.: Solid-St. Electron. 68 (2012) 98.
6. Dogan, H.: Physica B 457 (2015) 48.
7. Tham, W.H.: IEEE Trans. Electron Dev. 63 (2016) SI345.
8. Pandit, B.: AIP Adv. 11 (2021) 045314.
9. Fukuhara, N.: J. Applied Phys. 133 (2023)085702.

Osvald, J.: Temperature dependence of barrier height parameters of inhomogeneous Schottky diodes, Microelectron. Engn. 86 (2009) 117-120.

1. Yildirim, N.: Microelectr. Engn. 86 (2009) 2270.
2. Ejderha, K.: J. Alloys. Compounds 484 (2009) 870.
3. Bacaksiz, E.: J. Alloys. Compounds 496 (2010) 560.
4. Kavasoglu, A.S.: J. Alloys. Compounds 492 (2010) 421.
5. Ejderha, K.: Superlatt. Microstr. 47 (2010) 241.
6. Boyarbay, B.: Thin Solid Films 518 (2010) 2216.
7. Tascioglu, I.: J. Applied Phys. 108 (2010) 064506.
8. Harrabi, Z.: Physica B 405 (2010) 3745.
9. Soylu, M.: J. Alloys. Compounds 509 (2011) 5105.
10. Bacaksiz, E.: Thin Solid Films 519 (2011) 3679.
11. Kavasoglu, A.S.: J. Alloys. Compounds 509 (2011) 9394.
12. El-Nahass, M.M.: Synthetic Metals 161 (2011) 2253.
13. Guzeldir, B.: J. Phys. Chem. Solids 72 (2011) 1506.
14. Peta, K.R.: Microelectr. Engn. 93 (2012) 100.
15. Tripathi, S. K.: J. Applied Phys. 111 (2012) 074513.
16. Kinaci, B.: Mater. Sci Semicond. Process. 15 (2012) 531.
17. Sharma, M.: J. Applied Phys. 112  (2012)  024521.
18. Tugluoglu, N.: Phys. Status Solidi A 209 (2012) 2313.
19. Saglam, M.: J. Phys. Chem. Solids 74 (2013) 370.
20. Birel, O.: Physica B 412 (2013) 64.
21. Zhao, M.: Mater. Sci Engn. B 178 (2013) 465.
22. Yeganeh, M.A.: J. Semicond. 34 (2013) 082002.
23. Tombak, A.: Mater. Sci Semicond. Process. 28 (2014) 98.
24. Bestas, A.N.: Applied Surface Sci 318 (2014) 280.
25. El-Menyawy, E.M.: J. Mater. Sci-Mater. Electron. 25 (2014) 3939.
26. Mamor, M.: Superlatt. Microstr. 72 (2014) 344.
27. Hendi, A. A.: Synthetic Metals 199 (2015) 388.
28. Maril, E.: Philosoph. Magazine 95 (2015) 1049.
29. Zhao, M.: Chinese Phys. Lett. 32 (2015) 048501.
30. Soliman, I.M.: Synthetic Metals 209 (2015) 55.
31. Deniz, A.R.: J. Colloid Interface Sci 473 (2016) 172.
32. Filali, W.: Superlatt. Microstr. 111 (2017) 1010.
33. Coskun, F. M.: J. Applied Phys. 125(2019) 214104.
34. Nawar, A.M.: Applied Phys. A 126 (2020) 113.
35. Blond, J.: Solid-State Electron. 170 (2020) 107838.
36. Li, S.: IEEE Trans. Electron Dev. 68 (2021) ‏443.
37. Caldiran, Z.: J. Alloys. Compounds 865 (2021) 158856.
38. Bilgili, A.K.: Brazil. J. Phys. 51 (2021) 527.
39. Mondal, S.: Mater. Sci Semicond. Process. 130 (2021) 105834.
40. Kim, H.: Applied Phys. A 127 (2021) 647.
41. Narayanan, P.V.: ACS Applied Electron. Mater. 4 (2022) 6038.
42. Bekaddour, A.: Micro Nanostruct. 173 (2023) 207464.
43. El-Damhogi, D.G.: Chinese J. Phys. 85 (2023) 660.
44. Erdogan, M.: J. Photochem. Photobiol. A 443 (2023) 114877.
45. Gullu, H.H.: J. Mater. Sci-Mater. in Electron. 35 (2024) 189.

Srnánek, R., Irmer, G., Donoval, D., Osvald, J., McPhail, D., Christoffi, A., Sciana, B., Radziewicz, D., Tlaczala, M., : Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn δ-doped GaAs structures. Microelectr. J. 39 (2008) 1439-1443.

            1. Sanson, A.: J. Raman Spectros. 45 (2014) 197.

Osvald, J.: Numerical analysis of gate leakage current in AlGaN Schottky diodes. Applied Surface Sci 255 (2008) 793-795.

 1. Dobos, L.: Vacuum 82 (2008) 794.
2. Korkut, H.: AIP Conf. Proc. 1400 (2011) 497.
3. Chen, F.: Mater. Sci Engn. B 183 (2014) 24.

Osvald, J.: Simulation of influence of AlGaN/GaN heterojunction parameters on its capacitance curves. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 319-322.

       1. Pardeshi, H.: Superlatt. Microstr. 60 (2013) 47.

Osvald, J.: Numerical simultation of tunneling current in GaN Schottky diodes. J. Applied Phys. 101 (2007) 103701.

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2. Wu, T.: Electronics Lett. 44 (2008) 883.
3. Horvath, Z.J.: Applied Surface Sci 256 (2010) 5614.
4. Lin, Y.J.: Thin Solid Films 519 (2010) 829.
5. Ejderha, K.: European Phys. J.-Applied Phys. 68 (2014) Iss. 2.
6. Nirwal, V.S.: Mater. Research Express 3 (2016) 125901.
7. Dan, M.J.: Nano Energy 98 (2022) 107275.

Osvald, J.: Polarization effects and energy band diagram in AlGaN/GaN heterostructures. Applied Phys. A 87 (2007) 679-682.

 1. Huang, S.: Inter. Conf. Solid-State Integr. Circuits Technol. Proc., ICSICT, art. no. 4734648 (2008) 692.
2. Huang, S.: Semicond. Sci Technol. 24 (2009) 055005.
3. Jampana, B.R.: Mater. Res. Soc Symp. Proc. 1167 (2009) 3.
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5. Yotsuhashi, S.: Applied Phys. Lett.  100 (2012) 243904.
6. Yotsuhashi, S.: AIP Advan. 2 (2012) 042160.
#  7. Sun, J.: Guangxue Xuebao/Acta Optica Sinica 32 (2012) 0214002.
8. Sharma, N.: J. Comput. Electron. 13 (2014) 503.
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10. Hirose, K.: Japan. J. Applied Phys. 55 (2016) 08NB13.
11. Sharma, N.: J. Nanoelectron. Optoelectron. 11 (2016) 694.
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15. Sharma, N.: IEEE Trans. Electron Dev. 67 (2020) 289.
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Osvald, J.: Influence of lateral current spreading on the apparent barrier parameters of inhomogeneous Schottky diodes, J. Applied Phys. 99 (2006) 033708.

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