Ing. Šoltýs Ján, PhD.

Szívós, J., Pothorszky, S., Šoltýs, J., Serényi, M., An, H., Gao, T., Deák, A., Shi, J., and Sáfrán, G.: CoPt/TiN films nanopatterned by RF plasma etching towards dot-patterned magnetic media, Applied Surface Sci 435 (2018) 31-38.

1. Abbas, S.K.: J. Magnetism Magn. Mater. 469 (2019) 196.

Sečianska, K., Šoltýs, J. and Cambel, V.: Study of magnetic micro-ellipses by cantilever sensor, Acta Phys. Polonica A 131 (2017) 833-836.

1. Nilsen, M.: J. Micromech. Microengn. 29 (2019) 025014.

Neilinger, K., Šoltýs, J., Mruczkiewicz, M., Dérer, J., and Cambel, V.: Dual-cantilever magnetometer for study of magnetic interactions between patterned permalloy microstructures, J. Magnetism Magnetic Mater. 444 (2017) 354-360.

1. Yu, Y.: Japan. J. Applied Phys. 57 (2018) 090312.

Pribulová, Z., Medvecká, Z., Kačmarčík, J., Komanický, V., Klein, T., Rodière, P., Levy-Bertrand, F., Michon, B., Marcenat, C., Husaníková, P., Cambel, V., Šoltýs, J., Karapetrov, G., Borisenko, S., Evtushinsky, D., Berger, H., and Samuely, P.: Magnetic and thermodynamic properties of CuxTiSe2 single crystals, Phys. Rev. B 95 (2017) 174512.

1. Ekino, T.: J. Phys.-Cond. Matt. 29 (2017) 505602.
2. Banerjee, A.: Phys. Rev. B 98 (2018) 104206.

Medvecká, Z., Klein, T., Cambel, V., Šoltýs, J., Karapetrov, G., Levy-Bertrand, F., Michon, B., Marcenat, C., Pribulová, Z., and Samuely, P.: Observation of a transverse Meissner effect in CuxTiSe2 single crystals, Phys. Rev. B 93 (2016) 100501(R).

1. Lian, C.: Phys. Rev. B 100 (2019) 205423.
2. Lian, C.: Nature Comm. 11 (2020) 43.

Blaho, M., Gregušová, D., Haščík, Š., Seifertová, A., Ťapajna, M., Šoltýs, J., Šatka, A., Nagy, L., Chvála, A., Marek, J., Carlin, J.-F., Grandjean, N., Konstantinidis, G., and Kuzmík, J.: Technology of integrated self-aligned E/Dmode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics, Semicond. Sci Technol. 31 (2016) 065011.

1. Kumar, S.: IEEE Calcutta Conf. – CALCON 2020, pp.‏ 378. ‏.

Kačmarčík, J., Pribulová, Z., Samuely, T., Szabó, P., Cambel, V., Šoltýs, J., Herrera, E., Suderow, H., Correa-Orellana, A., Prabhakaran, D., Samuely, P., : Single-gap superconductivity in ẞ-Bi2Pd. Phys. Rev. B 93 (2016) 144502.

1. Biswas, P.K.: Phys. Rev. B 93 (2016) 220504.
2. Che, L.: Phys. Rev. B 94 (2016) 024519.
3. Xu, C. Q.: Phys. Rev. B 94 (2016) 165119.
4. Guan, S.-Y.: Sci Adv.2 (2016) e1600894.
5. Zheng, J.-J.: Phys. Rev. B 95 (2017) 014512.
6. Saib, S.: Intermetall.84 (2017) 136.
7. Mitra, S.: Phys. Rev. B 95 (2017) 134519.
8. Lv, Y.-F.: Sci Bull.62 (2017) 852.
9. Iwaya, K.: Nature Comm. 8 (2017) 976.
10. Choi, H.: Phys. Rev. Mater. 1 (2017) 034201.
11. Wang, B.T.: J. Phys.-Cond. Matt. 29 (2017) 325501.
#   12. Xu, C.Q.: Phys. Rev. B 96 (2017) 064528.
13. Zhou, Y.: Phys. Rev. B 99 (2019) 054501.
14. Xu, T.: Phys. Rev. B 100 (2019) 161109.
15. Li, Y.: Science 366 (2019) Iss. 6462, p. 238-+.
16. Kolapo, A.: Sci Rep. 9 (2019) 12504.
17. Chen, J.: Phys. Rev. B 101 (2020) 054514.
18. Liu, P.-F.: Phys. Rev. B 102 (2020) 155406.
19. Yan, D.Y.: Supercond. Sci Technol. 34 (2021) 035025.

Ščepka, T., Polakovič, J., Šoltýs, J., Tóbik, J., Kulich, M., Kúdela, R., Dérer, J., and Cambel, V.: Individual vortex nucleation/annihilation in ferromagnetic nanodots with broken symmetry observed by micro/Hall magnetometry, AIP Adv. 5 (2015) 117205.

1. Ehrmann, A.: J. Magnetism Magnetic Mater. 475 (2019) 727.

Precner, M., Fedor, J., Šoltýs, J., and Cambel, V.: Dual-tip magnetic force microscopy with suppressed influence on magnetically soft samples. Nanotechnol. 26 (2015) 055304.

 1. Wang, L.: Nanoscale Res. Lett. 11 (2016) 342.
2. Liu, J.: Micron 102 (2017) 15.
#          3. Passeri, D.: In Magnetic characterization techniques for nanomater. Springer 2017. ISBN 978-3-662-52779-5, p. 209.
4. Corte-Leon, H.: Nanoscale 11 (2019) 4478.
5. Zhang, Y.: J. Controlled Release 322 (2020)‏ 401.

Precner, M., Fedor, J., Tóbik, J., Šoltýs, J., and Cambel, V.: High resolution tips for switching magnetization MFM, Acta Phys. Polonica A 126 (2014) 386-387.

1. Schoenherr, P.: Materials 10 (2017) 1051.
2. Puttock, R.: IEEE Trans.Magnet. 53 (2017) 6500805.
3. Kazakova, O.: J. Applied Phys. 125 (2019) 060901.

Štrbik, V., Reiffers, M., Dobročka, E., Šoltýs, J., Španková, M., Chromik, Š., : Epitaxial LSMO thin films with correlation of electrical and magnetic properties above 400K. Applied Surface Sci 312 (2014) 212-215.

1. Dutta, P.: J. Alloys Compounds 653 (2015) 585.
2. Shiota, T.: Thin Solid Films 593 (2015) 1.
#     3. Zhang, S.: Applied Surface Sci 335 (2015) 115.
4. Yan, F.: Mater. Character. 124 (2017) 90.
5. Arango, I. C.: J. Phys. Conf. Ser. 935 (2017) UNSP012028.
#    6. Zhang, X.: Hsueh Pao/J. Chinese Ceramic Soc 45 (2017) 1303.
7. Zhang, F.: Nanoscale Research Lett. 13 (2018) 24.
8. Rasic, D.: ACS Applied Mater. Interfaces 10 (2018) 21001.

Cambel, V., Precner, M., Fedor, J., Šoltýs, J., Tóbik, J., Ščepka, T., Karapetrov, G., : High resolution switching magnetization magnetic force microscopy. Applied Phys. Lett. 102 (2013) 062405.

1. Li, Z.: Sci Reports 4 (2014) 5594.
2. Li, Z.: NANOSCALE 6 (2014) 11163.
3. Liu, D.: Applied Phys. Lett. 107 (2014) 103110.
4. Li, Z.: Phys. Chem. Chem. Phys. 18 (2016) 28254.
5. Li, Z.: Mater. Sci-Poland 34 (2016) 924.
6. Kinoshita, Y.: Nanotechnol. 28(2017) 485709.
7. Cao, Y.: Nanotechnol. 29(2018) 305502.
8. Kumar, P.: J. Applied Phys. 123 (2018)214503.

Hudec, B., Hušeková, K., Rosová, A., Šoltýs, J., Rammula, R., Kasikov, A., Uustare, T., Mičušík, M., Omastová, M., Aarik, J., and Fröhlich, K.: Impact of plasma treatment on electrical properties of TiO2/RuO2 based DRAM capacitor, J. Phys. D 46 (2013) 385304.

1. Pointet, J.: J. Vacuum Sci Technol. A 32 (2014) 01A120.
2. Wang, W.: Sci Reports 4 (2014) 4452.
3. Jeon, W.: ACS Applied Mater. Interfac. 6 (2014) 21632.
4. Jeon, W.: J. Mater. Chem. C 2 (2014) 9993.
5. Seok, J.: Phys. Chem. Chem. Phys. 17 (2015) 3004.
6. Luo, W.-B.: Chemical Comm. 51 (2015) 8269.
7. Liu, C.: Adv. Mater. Interfac. 3 (2016) 1500503.
8. Chaker, A.: J. Applied Phys. 120 (2016) 085315.
9. Kim, H.: J. Nanosci Nanotechnol. 17 (2017) 2906.
10. Nabatame, T.: ECS Trans. 80 (2017) 365.
11. Sawada, T.: J. Vacuum Sci Technol. A 35 (2017) 061503.
12. Niemela, Janne-P.: Semicond. Sci Technol. 32 (2017) 093005.
13. Nong, S.: J. American Chem. Soc 140 (22018) 5719.
14. Li, M.: Applied Surface Sci 439 (2018) 612.
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16. Bi, L.: J. Alloys Comp. 845 (2020) 156271.
17. Tsuji, R.: ACS Omega 5 (2020) 6090.
18. Zhang, J.: Catal. Sci Technol. 10 (2020) 1518.
19. Park, H.: Chemosphere ‏265 (2021) 129166.
20. Jung, E.Y.: Nanotechnol. 32 (2021) 045201.

Šoltýs, J., Gaži, Š., Fedor, J., Tóbik, J., Precner, M., Cambel, V., : Magnetic nanostructures for non-volatile memories. Microelectr. Engn. 110 (2013) 474-478.

        1. Hluchy, L.: Comput. Informat. 35 (2016) 1386.

Barančeková Husaníková, P., Fedor, J., Dérer, J., Šoltýs, J., Cambel, V., Iavarone, M., May, S., and Karapetrov, G.: Magnetization properties and vortex phase diagram of CuxTiSe2 single crystals. Phys. Rev. B 88 (2013) 174501.

1. Kaul, A.B.: J. Mater. Research 29 (2014) 348.
2. Hui, Z.: J. Applied Phys. 115 (2014) 033905.
3. Abdel-Hafiez, M.: Sci Rep. 6 (2016) 31824.
4. Song, Y.J.: Physica Status Solidi B 253 (2016) 1517.
5. Pervin, R.: Mater. Res. Express 5 (2018) 076001.
6. Lian, C.: Phys. Rev. B 100 (2019) 205423.
7. Lian, C.: Nature Comm. 11 (2020) 43.

Kúdela, R., Šoltýs, J., Vincze, A., and Novák, J.: Tellurium delta-doped InGaP layers grown by metalorganic vapour phase epitaxy. Phys. Status Solidi RRL 7 (2013) 443–446.

1. Gibson, B.: J. Anal. Atomic Spectrom. 29 (2014) 1969.
2. Bedair, S.M.: Applied Phys. Lett. 108 (2016) 203903.

Cambel, V., Tóbik, J., Šoltýs, J., Fedor, J., Precner, M., Gaži, Š., Karapetrov, G., : The influence of shape anisotropy on vortex nucleation in Pacman-like nanomagnets,. J. Magnetism Magnetic Mater. 336 (2013) 29-36.

1. Galvao, S.B.: Mater. Lett. 115 (2014) 38.
2. Hluchy, L.: Comput. Informat. 35 (2016) 1386.
3. Zheng, Y.: Rep. Progress in Phys. 80 (2017) 086501.
4. Ziegelwanger, H.: J. Comput. Phys. 346 (2017) 152.

Hasenöhrl, S., Eliáš, P., Šoltýs, J., Stoklas, R., Laurenčíková, A., Novák, J., : Zinc-doped gallium phosphide nanowires for photovoltaic structures,. Applied Surface Sci 269 (2013) 72-76.

1. Chandiramouli, R.: Mater. Sci Engn. B 194 (2015) 55.
2. Lee, S.: ACS Applied Mater. & Interfaces 8 (2016) 16178.
3. Horley, P.: Physica E 83 (2016) 227.
4. Chen, J.-Y.: CRYSTENGCOMM 19 (2017) 975.
5. Mohammad, R.: Inter. J. Modern Phys. C 28 (2017) Iss. 3.
6. Kim, D.-H.: J. Electronic Mater. 46 (2017) 4750.

Meško, M., Vretenár, V., Kotrusz, P., Hulman, M., Šoltýs, J., Skákalová, V., : Carbon nanowalls synthesis by means of atmospheric dcPECVD method. Phys. Status Solidi B 249 (2012) 2625–2628.

1. Bo, Z.: Phys. Status Solidi B 251 (2014) 155.
2. Zhang, X.: Phys. Status Solidi B 251 (2014) 829.
3. Mishin, M.V.: Russian J. General Chem. 85 (2015) 1209.
4. Zou, H.H.: Composites B 73 (2015) 57.
5. Bo, Z.: Phys. Status Solidi B 252 (2015) 2236.
6. Michniak, P.: NANOCON 2015. P. 143.
7. Li, M.: Advanced Sci 3 (2016) 1600003.
8. Bo, Z.: Phys. Status Solidi B 254 (2017) 1600804.
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10. Li, L.: Applied Phys. Lett. 115 (2019) 081101.
11. Jasek, O.: Diamond Related Mater. 105 (2020) 107798.

Novák, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Stoklas, R., Laurenčíková, A., Mikulics, M., : Electrical and photoluminescence properties of individual GaP nanowires doped by zinc Phys. Status Solidi a 209 (2012) 2505-2509.

1. Jiang, H.-B.: Chinese Sci Bull. 59 (2014) SI2135.
2. Wallentin, J.: Nano Lett. 14 (2014) 1707.
3. Tomioka, K.: J. Phys. D 47 (2014) SI394001.
4. Liao, G.: Sci Rep. 6 (2016) 28240.

Hasenöhrl, S., Novák, J., Vávra, I., Šoltýs, J., Kučera, M., and Šatka, A.: Epitaxial growth of GaP/InxGa1-xP (xIn ≥ 0,27) virtual substrate for optoelectronic applications, J. Electr. Engn. 62 (2011) 93-98.

1. Shi, B.: J. Applied Phys. 127 (2020) 033102.

Novák, J., Vávra, I., Križanová, Z., Hasenöhrl, S., Šoltýs, J., Reiffers, M., Štrichovanec, P., : Dependence of Curie temperature on surface strain in InMnAs epitaxial structures. Applied Surface Sci 256 (2010) 5672-5675.

1. Bouravleuv, A.D.: Semicond. 47 (2013) 1037.
2. Bouravleuv, A.: Applied Phys.Lett. 105 (2014) 232101.
3. Bouravleuva, A.: J. Crystal Growth 468 (2017) 680.
4. Marcal, L.A.B.: Phys. Rev. B 96 (2017) 245301.

Hušeková, K., Dobročka, E., Rosová, A., Šoltýs, J., Šatka, A., Fillot, F., Fröhlich, K., : Growth of RuO2 thin films by liquid injection atomic layer deposition. Thin Solid Films 518 (2010) 4701-4704.

1. Over, H.: Chemical Rev. 112 (2012) 3356.
2. Miikkulainen, V.: J. Applied Phys. 113 (2013) 021301.
3. Hamalainen, J.: Chem. Mater. 26 (2014) SI786.
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5. Gregorczyk, K.E.: ACS NANO 9 (2015) 464.
6. Sawada, T.: J. Vacuum Sci Technol. A 35 (2017) 061503.
7. Nabatame, T.: ECS Trans. 80 (2017) 365.
8. Lin, C.: J. Electrochem. Soc 166 (2019) D476.
9. Lee, J.H.: Thin Solid Films 701 (2020) 137950.

Čičo, K., Gregušová, D., Gaži, Š., Šoltýs, J., Kuzmík, J., Carlin, J., Grandjean, N., Pogany, D., and Fröhlich, K.: Optimization of the ohmic contact processing in InAlN/GaN high electron mobility transistors for lower temprerature of annealing, Phys. Status Solidi c 7 (2010) 108-111.

1. Kim, S.: Applied Phys. Lett. 102 (2013) 052107.
2. Lee, D.S.: Japan. J. Applied Phys. 53 (2014) 100212.
3. Bergsten, J.: Semicond. Sci Technol. 30 (2015) 105034.
4. Li, Q.: AIP Adv. 7 (2017) 125103.
5. Li, Q.: Acta Phys. Sinica 67 (2018) 027303.
6. Yoshida, T.: Japan. J. Applied Phys. 57 (2018) 110302.
7. Lin, Y.-K.: Semicond. Sci Technol.33 (2018) 095019.

Novák, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Vávra, I., : Study of the growth and structural properties of InMnAs dots grown on high-index surfaces by MOVPE. Mater. Sci Semicond. Proc. 13 (2010) 167-172.

            1. Bouravleuv, A.D.: Semicond. 47 (2013) 1037.

Kúdela, R., Kučera, M., Dobročka, E., Šoltýs, J., : AlGaAs/InGaP interfaces in structures prepared by MOVPE. J. Crystal Growth 311 (2009) 3123-3129. (APVV 51-045705).

       1. Farag, A.A.M.: J. Alloys Compounds 509 (2011) 8056.

Cambel, V., Martaus, J., Šoltýs, J., Kúdela, R., Gregušová, D., : Local anodic oxidation by AFM tip developed for novel semiconductor nanodevices. Ultramicroscopy 108 (2008) 1021-1024.

       1. Voves, J.: Microelectr. Engn. 86 (2009) 561.
2. Simeone, F.C.: J. Phys. Chem. C 113 (2009) 18987.
#    3. Abdullah, A.M.: Inter. J. Nanosci 9 (2010) 251.
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Martaus, J., Gregušová, D., Cambel, V., Kúdela, R., Šoltýs, J., : New approach to local anodic oxidation of semiconductor heterostructures. Ultramicroscopy 108 (2008) 1086-1089.

       1. Pust, S.E.: Nanotechnology 20 (2009) 075302.
2. Simeone, F.C.: J. Phys. Chem. C 113 (2009) 18987.
3. Janousek, M.: Microelectr. Engn. 87 (2010) 1066.
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#    6. Tian, L.: Scientia Sinica Chimica 49 (2019) 455.

Cambel, V., Martaus, J., Šoltýs, J., Kúdela, R., Gregušová, D., : AFM nanooxidation process – technology perspective for mesoscopic structures. Surface Sci. 601 (2007) 2717-2723. (APVV 51-045705).

   1. Parisse, P.: Mater. Sci Engn. B 165 (2009) 227.
2. Jo, Y.D.: Applied Phys. Lett. 96 (2010) 082105.
3. Bukauskas, V.: Surface Interface Anal. 42 (2010) 991.
4. Lin, C.W.: Applied Surface Sci 264 (2013) 280.
5. Han, C.: Bull. Korean Chem. Soc 36 (2015) 1024.
6. Batkova, M.: Europ. Phys. J.-Applied Phys. 73 (2016) 30301.
7. Mollick, S.A.: Nanotechnol. 27 (2016) 435302.

Bartolome, E., Pavau, A., Guitierrez, J., Granados, X., Pomar, A., Puig, T., Obradors, X., Cambel, V., Šoltýs, J., Gregušová, D., Chen, D., Sanchez, A., : Artificial magnetic granularity effects on patterned epitaxial YBa2Cu3O7-x thin films. Phys. Rev. B 76 (2007) 094508.

     1. Vestgarden, J. I.: Phys. Rev. B 85 (2012) 014516.
2. Janu, Z.: Physica C 501 (2014) 55.

Cambel, V., Karapetrov, G., Novosad, V., Bartolome, E., Gregušová, D., Fedor, J., Kúdela, R., Šoltýs, J., :Novel Hall sensors developed for magnetic field imaging systems. J. Magnetism Magn. Mater. 316 (2007) 232-235. (APVV 51-045705).

        1. Cheng, Y.H.: Physical Rev. B 80 (2009) 174412.
2. Tian, W.: Rev. Sci Instrum. 84 (2013) 035004.

Šoltýs, J., Cambel, V., Kúdela, R., Eliáš, P., : Study into the shape of oxide lines formed by LAO – influence an oxidized material. Surface Sci 601 (2007) 2876-2880.

   1. Kim, T.Y.: Surface Sci 601 (2007) 4910.

Cambel, V., Šoltýs, J., : The influence of sample conductivity on local anodic oxidation by the tip of atomic force microscope. J. Applied Phys. 102 (2007) 074315.

1. Parisse, P.: Mater. Sci Engn. B 165 (2009) 227.
2. Jo, Y.D.: Applied Phys. Lett. 96 (2010) 082105.
3. Moriya, R.: Japan. J. Applied Phys. 52 (2013) UNSP 055201.
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8. Ryu, Y.K.: Nanosci Technol. ‏2019 pp. 143-172.

Haščík, Š., Eliáš, P., Šoltýs, J., Martaus, J., Hotový, I., : CCl4-based reactive ion etching of semi-insulating GaAs and InP. Czechoslov. J. Phys. B 56 (2006) S1169-S1173.

       1.Venugopal, V.: Surface Sci 602 (2008) 3000.
2. Park, Y.H.: Microelectr. Engn. 87 (2010) 548.
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Gregušová, D., Eliáš, P., Öszi, Z., Kúdela, R., Šoltýs, J., Fedor, J., Cambel, V., Kostič, I., : Technology and properties of a vector hall sensor. Microelectronics J. 37 (2006) 1543-1546.

#     1.Rybak, M.: Przeglad Wlokienniczy 61 (2007) 39.
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Eliáš, P., Martaus, J., Šoltýs, J., Kostič, I., : Micromachining of mesa and pyramidal-shaped objects in (1 0 0) InP substrates. J. Micromech. Microengn. 15 (2005) 1007-1014.

*     1. Siwak, N.P.: PhD Thesis. Univ. Maryland 2007.
2. Chappell, G.A.: Optical Mater. Express 10 (2020)‏ 3328.

Španková, M., Vávra, I., Chromik, Š., Harasek, S., Lupták, R., Šoltýs, J., Hušeková, K., : Structural properties of Y2O3 thin films grown on Si(1 0 0) and Si(1 1 1) substrates,. Materials Sci Engn. B 116 (2005) 30-33.

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Písečný, P., Hušeková, K., Fröhlich, K., Harmatha, L., Šoltýs, J., Machajdík, D., Espinos, J., Jergel, M., and Jakabovič, J.: Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology, Materials Sci Semicond. Process. 7 (2004) 231-236.

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