Ing. Stoklas Roman, PhD.

Stoklas, R., Hasenőhrl, S., Dobročka, E., Gucmann, F., and Kuzmík, J.:  Electron transport properties in thin InN layers grown on InAlN, Mater. Sci  Semicond. Process. 155 (2023) 107250.

1. He, Z.: Vacuum 220 (2024) 112833.

Šichman, P., Stoklas, R., Hasenöhrl, S., Gregušová, D., Ťapajna, M., Hudec, B., Haščík, Š., Hashizume, T., Chvála, A., Šatka, A., and Kuzmík, J.: Vertical GaN transistor with semi-insulating channel, Physica Status Solidi (a) 220 (2023) SI2200776.

1. Woo, K.: J. Phys.-Mater. 7 (2024) 022003.

Stoklas, R., Chvála, A., Šichman, P., Hasenöhrl, S., Haščík, Š., Priesol, J., Šatka, A., and Kuzmík, J.: Analysis and modeling of vertical current conduction and breakdown mechanisms in semi-insulating GaN grown on GaN: role of deep levels, IEEE Trans. Electron Dev. 68 (2021) 2365.

1. Kim, H.: J. Electron. Mater. 50 (2021) 6688.
2. Qin, Y.: J. Phys. D 56 (2023) 093001.
3. Liu, B.: Inter. J. Numeric. Modell.-Electron. Networks Dev. Fields 37 (2024) Iss. 2.

Zelent, M., Vetrova, Iu.V., Li, X., Zhou, Y., Šoltýs, J., Gubanov, V.A., Sadovnikov, A.V., Ščepka, T., Dérer, J., Stoklas, R., Cambel, V., and Mruczkiewicz, M.: Skyrmion formation in nanodisks using magnetic force microscopy tip, Nanomater. 11 (2021) 2627.

1. Chaves-O’Flynn, G.D.: Physica D 445 (2023) 133617.

Kuzmík, J., Adikimenakis, A., Ťapajna, M., Gregušová, D., Haščík, Š., Dobročka, E., Tsagaraki, K., Stoklas, R., and Georgakilas, A.: InN: breaking the limits of solid-state electronics, AIP Adv. 11 (2021) 125325.

1. Damas, G.B.: J. Chem. Phys. 158 (2023) 174313.
2. Loo, C.C.: Mater. Character. 205 (2023) 113279.
3. Enayati, H.: Crystals 14 (2024) 105.

Sojková, M., Dobročka, E., Hutár, P., Tašková, V., Pribusová Slušná, L., Stoklas, R., Píš, I., Bondino, F., Munnik, F., and Hulman, M.: High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization, Applied Surface Sci 538 (2021) 147936.

1. Lukas, S.: Adv. Function. Mater. 31 (2021) 2102929.
2. Nakazawa, T.: Photonics 8 (2021) 505.
3. Miller, A.M.: Zeit. Naturfor. B-A J. Chem. Sci 77 (2022) 313.
4. Todorova, N.: Applied Surface Sci 611 (2023) 155534.
5. Tang, Q.Y.: Nanomater. 13 (2023) 1169.
6. Raczynski, J.: Mater. Sci Engn. B 297 (2023) 116728.
7. Liu, H.:  Phys. Status Solidi RRL 17 (2023) Iss.12.
8. Cho, Y.S.: ECOMAT 5 (2023) 12358.

Vetrova, Iu.V., Zelent, M., Šoltýs, J., Gubanov, V.A., Sadovnikov, A.V., Ščepka, T., Dérer, J., Stoklas, R., Cambel, V., and Mruczkiewicz, M.: Investigation of self-nucleated skyrmion states in the ferromagnetic/nonmagnetic multilayer dot, Applied Phys. Lett. 118 (2021) 212409.

1. Heyderman, L.: Applied Phys. Lett. 119 (2021) 080401.
2. Saavedra, E.: Sci Rep. 11 (2021) 23010.
3. Lepadatu, S.: J. Applied Phys. 130 (2021) 163902.
4. Orlov, V.A.: Techn. Phys. 67 (2022) 289.

Šichman, P., Hasenöhrl, S., Stoklas, R., Priesol, J., Dobročka, E., Haščík, Š., Gucmann, F., Vincze, A., Chvála, A., Marek, J., Šatka, A., and Kuzmík, J.: Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure, Mater. Sci Semicond. Process. 118 (2020) 105203.

1. Mochizuki, K.: Japan. J. Applied Phys. 60 (2021) 018002.
2. Pan, Y.: Inter. J. Energy Res. 45 (2021) 15512.
3. Qin, Y.: J. Phys. D 56 (2023) 093001.

Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., and Kuzmík, J.: Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs, Applied Surface Sci 528 (2020) 146824.

1. Tian, Y.: Inter. J. Electrochem. Sci 15 (2020) 12682.

Gregušová, D., Tóth, L., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Cora, I., Fogarassy, Z., Stoklas, R., Seifertová, A., Blaho, M., Laurenčíková, A., Oyobiki, T., Pécz, B., Hashizume, T., and Kuzmík, J.: InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region, Japan. J. Applied Phys. 58 (2019) SCCCD21.

1. Biswas, D.: Mater. Sci Semicond. Process. 135 (2021) 106109.

Chauhan, P., Hasenöhrl, S., Dobročka, E., Vančo, Ľ., Stoklas, R., Kováč, J., Šiffalovič, P., and Kuzmík J.: Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer, Applied Surface Sci 470 (2019) 1-7.

1. Bangolla, H.K.: Nanoscale Adv. 4 (2022) 4886.

Hasenöhrl, S., Chauhan, P., Dobročka, E., Stoklas, R., Vančo, Ľ., Veselý, M., Bouazzaoui, F., Chauvat, M.-P., Reterana, P., and Kuzmík, J.: Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures, Applied Phys. Express 12 (2019) 014001.

1. Murugapandiyan, P.: J. Electronic Mater. ‏49 (2020) SI524.

Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, I.V., Ťapajna, M., Fröhlich, K., Haščík, Š., Gregor, M., and Kuzmík, J.: Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition, Applied Surface Sci 461 (2018) 255-259.

1. Ber, E.: IEEE Trans. Electron Dev. 66 (2019) 2100.
2. Zhang, X.-Y.: Nanoscale Res. Lett. 14 (2019) 83.
3. Liu, M.: Chinese Phys. B 29 (‏ 127101(2020.
4. Akkaya, A.: Mater. Today-Proc. 46 (2021) 6939.
5. Mohanty, S.: Applied Phys. Lett. 119 (2021) 042901.
6. Cheng, W.C.: J. Vacuum Sci Technol. B 40 (2022) 022212.
7. Shen, C.X.: Adv. Sci 9 (2022) 2104599.
8. Zhu, X.F.: J. Europ. Ceram. Soc 43 (2023) 4349.
9. Wu, N.T.: Semicond. Sci Technol. 38 (2023) 063002.
10. Wang, B.X.: J. Vacuum Sci Technol. A 42 (2024) 012401.
11. Long, P.X.: Nanotechnol. 35 (2024) 025204.

Kúdela, R., Šoltýs, J., Kučera, M., Stoklas, R., Gucmann, F., Blaho, J., Mičušík, M., Pohorelec, O., Gregor, M., Brytavskyi, I.V., Dobročka, E., and Gregušová, D.: Technology and application of in-situ AlOx layers on III-V semiconductors, Applied Surface Sci 461 (2018) 33-38.

1. Sa, Z.X.: Adv. Functional Mater. 33 (2023) Iss. 38.

Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Toth, L., Pecz, B., Micusik, M., Brunner, F., and Kuzmík, J.: Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties, Applied Surface Sci 426 (2017) 656-661.

1. Huang, H.: J. Phys. D 51(2018) 345102.
2. Jo, Y.J.: Electron. Mater. Lett. 15 (2019) 179.
3. Shi, Y.: IEEE Trans. Electron Dev. 66 (2019) 4164.
4. He, F.: Chinese J. Catal. 41 (2020) SI9.
5. Shi, Y.: IEEE Trans. Electron Dev. 67 (2019) 2290.
6. Asubar, J.T.: IEEE Electron Dev. Lett. 41 (2020) ‏ 693.
7. Cai, Y.: Japan. J. Applied Phys. 59 (2020) 041001.
8. Low, R.S.: Applied Phys. Express 14 (2021) 031004.
9. Dashtian, K.: Coord. Chem. Rev. 445 (2021) 214097.
10. Vauche, L.: ACS Applied Electron. Mater. 3 (2021) 1170.
11. Kaushik, P.K.: Nanoscale Res. Lett. 16 (2021)159.
12. Kaplar, R.: Ultrawide Bandgap Semicond. 107 (2021) 191.
13. Ahbab, S.S.: Proc. IEEE Inter. Women in Engn. (WIE) Conf. Electr. Computer Engn., WIECON-ECE 2021. IEEE 2022, p. 59.
14. Gong, J.R.: Japan. J. Applied Phys. 61 (2022) 011003.
15. Lin, Y.S.: Sci Adv. Mater. 4 (2022) 1419.
16. Nautiyal, P.: Microelectron. Reliab. 139 (2022) 114800.
17. Brivio, F.: Applied Phys. Lett. 123 (2023) 022104.
18. Gong, J.R.: J. Applied Phys. 135 (2024) 115303.

Matys, M., Stoklas, R., Blaho, M., and Adamowicz, B.: Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition, Applied Phys. Lett. 110 (2017) 243505.

1. Uedono, A.: J. Applied Phys. 123 (2018) 155302.
2. He, Z.: Semicond. Sci Technol. 34 (2019) 035020.
3. Tapajna, M.: Mater. Sci Semicond. Process. 91 (2019) 356.
4. Asubar, J.T.: IEEE Electron Device Lett. 41(2020) ‏ 693.
5. Zhao, Y.: Phys. Status Solidi a 217 (2020) 1900981.
6. Tapajna, M.: Crystals 10 (2020) 1153.
7. He, J.Q.:Adv. Electron. Mater. 7 (2021) 2001045.
8. Gong, J.R.: Japan. J. Applied Phys. 61 (2022) 011003.
9. Kohler, K.: Semicond. Sci Technol. 37 (2022) 025016.
10. Shibata, T.: Japan. J. Applied Phys. 61 (2022) 065502.
11. Lin, Y.S.: Sci Adv. Mater. 14 (2022) 1419.
12. Gong, J.R.: J. Applied Phys. 132 (2022) 135302.
13. Qiu, S.Y.: AIP Adv. 13 (2023) 055110.
14. Yang, Y.N.: Micromach.14 (2023) 1278.

Florovič, M., Stoklas, R. , Kováč, J., and Kordoš, P.: Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors, Semicond. Sci Technol. 32 (2017) 025017.

1. Wang, N.: AIP Adv. 7 (2017) 095317.
2. Lalinsky, T.: Phys. Status Solidi A 214 (2017) 1700691.
3. Chakraborty, A.: Superlatt. Microstr. 113 (2018) 147.
4. Cui, M.: IEEE Access 7 (2019) 184375.
5. Wu, W.W.: Phys. Status Solidi a 221 (2024) Iss. 6.

Stoklas, R., Gregušová, D., Blaho, M., Fröhlich, K., Novák, J., Matys, M., Yatabe, Z.,  Kordoš, P., and Hashizume, T.: Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction, Semicond. Sci Technol. 32 (2017) 045018.

1. Liang, X.: Semicond. Sci Technol. 32 (2017) 095010.
2. Yoon, S.-J.: J. Alloys Compounds 741 (2018) 999.
3. Bazaka, K.: Nanoscale 10 (2018) 17494.
4. Wang, C.: Phys. Status Solidi a 215 (2018) 1800092.
5. Gulseren, M.E.: Mater. Research Express 6 (2019) 095052.
6. Gokhan, K.: Solid-State Electron. 158 (2019) 22.
7. Xu, K.: Chemistry-Europ. J. 25 (2019) 5014.
8. Cai, Y.: ICICDT 2019.
9. Biswas, M.: J. Lumines. 222 (2020) 117123.
10. Cai, Y.: Japan. J. Applied Phys. 59 (2020) 041001.
11. Cai, Y.: IEEE Access 8 (2020) 95642.
12. Abo-Kahla, D.A.M.: J. Optical Soc America B 37 (2020) A96.
#   13. Abo-Kahla, D.A.M.: Pramana – J. Phys. 94 (2020) 65.
14. Choi, S.: J. Alloys Compounds 854 (2021) 157186.
15. Akazawa, M.: Japan. J. Applied Phys. 60 (2021) 036503.
16. Izsak, T.: Mater. Sci Engn. B 273 (2021) 115434.
17. Schiliro, E.: ACS Applied Electr. Mater. 4 (2022) 406.

Gregušová, D., Gucmann, F., Kúdela, R., Mičušík, M., Stoklas, R., Válik, L., Greguš, J., Blaho, M., Kordoš, P., :Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment,. Applied Surface Sci 395 (2017) 140-144.

1. Silva, J.C.F.: J. Molecular Model. 23 (2017) 204.
2. Kumar, J.: J. Alloys Compounds 727 (2017) 1089.
3. Sharma, I.: J. Alloys Compounds 723 (2017) 50.
4. Zhou, Y.: J. Colloid Interface Sci 560 (2020) 769.
#    5. Panda, S.: Proc. DevIC 2021, pp. 71-74.
6. Gil-Corrales, J.A.: Inter. J. Molecular Sci 23 (2022) 5169.
7. Panda, S.R.: Physica Scripta 97 (2022) 114006.
8. Panda, S.R.: Physica Scripta 98 (2023) 125984.

Matys, M., Adamowicz, J.B., Domanowska, A., Michalewicz, A., Stoklas, R., Akazawa, M., Yatabe, Z., and Hashizume, T.: On the origin of interface states at oxide/III-nitride heterojunction interfaces, J. Applied Phys. 120 (2016) 225305.

1. Uedono, A.: J. Applied Phys. 123 (2018) 155302.
2. Le, S.P.: J. Applied Phys. 123 (2018) 034504.
3. Im, K.-S.: IEEE J. Electron Dev. Soc 6 (2018) 354.
4. Sato, T.: Applied Phys. Lett. 113 (2018) 063505.
5. Liu, X.: ACS Applied Mater. Interfaces 10 (2018) 21721.
6. Jo, Y.J.: Electron. Mater. Lett. 15 (2019) 179.
7. Irokawa, Y.: AIP Adv. 9 (2019) 085319.
8. Uedono, A.: J. Applied Phys. 127 (2020) 054503.
9. Kamada, Y.: Japan. J. Applied Phys. 59 (2020) 046505.
10. Duong D.N.: J. Applied Phys. 127 (2020) 094501.
#   11. Enisherlova, K.L.: Russian Microelectr. 49 (2020) 603.
12. Maksimowski, P.: Przemysl Chemiczny 100 (2021) 278.
13. Nguyen, D.D.: J. Applied Phys. 130 (2021) 014503.
14. Rrustemi, B.: J. Applied Phys. 130 (2021) 105704.
15. Zheng, Z.Y.: IEEE Electron Dev. Lett. 42 (2021) 1584.
16. Raja, P.V.: Electron. 10 (2021) 3096.
17. Zhang, L.: IEEE Inter. Electron Devices Meet. 2021.
18. Meneghini, M.: J. Applied Phys. 130 (2021) 181101.
19. Calzolaro, A.: Materials 15 (2022) 791.
20. Zhang, J.H.: AIP Adv. 12 (2022) 045111.
21. Zhang, L.: IEEE Electron Dev. Lett. 43 (2022) 1822.
22. Blanton, E.W.: Applied Phys. Lett. 122 (2023) 173502.
23. Qiang, L.: Modern Phys. Lett. B 37 (2023) 2350092.
24. Yoo, S.H.: Phys. Rev. Applied 19 (2023) 064037.
25. Mallem, S.P.R.: Nanomater. 13 (2023) 2132.
26. Su, H.K.: IEEE Electron Dev. Lett. 44 (2023) 1939.

Ťapajna, M., Stoklas, R., Gregušová, D., Válik, L., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Toth, L., Pecz, B., Micusik, M., Brunner, F., Hashizume, T., and Kuzmík, J.: On the origin of surface donors in AlGaN/GaN metal-oxide semiconductor heterostructures with Al2O3 gate dielectric—correlation of electrical, structural, and chemical properties. In: Inter. Workshop on Nitride Semicond. (IWN 2016) Orlando 2016.

1. Akazawa, M.: Phys. Status Solidi B 254 (2017) 1600691.

Florovic, M., Stoklas, R., and Kordos, P.: Temperature dependence of the threshold voltage in GaN-based HFETs and MOSHFETs. In: WOCSDICE EXMATEC 2016.

1. Alshahed, M.: IEEE Proc. ESSDERC Conf. 2017 P.196.

Matys, M., Stoklas, R., Kuzmík, J., Adamowicz, J., Yatabe, Z., and Hashizume, T.: Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures, J. Applied Phys. 119 (2016) 205304.

 1. Kubo, T.: Semicond. Sci Technol. 32 (2017) 065012.
2. Kumar, S.: IEEE Trans. Electron Dev. 64 (2017) 4868.
3. Liu, X.: ACS Applied Mater. Interfaces 10 (2018) 21721.
4. Verma, M.: Trans. Electric. Electron. Mater.‏ 21 (2020) 427.
5. Tapajna, M.: Crystals 10 (2020) 1153.
6. Deng, K.: Applied Surface Sci ‏ 542 (2021) 148530.
7. Minetto, A.: IEEE Trans. Electron Dev. 68 (2021) 5003.
8. Liu, Y.B.: Chinese Phys. B 30 (2021) 117302.
9. Modolo, N.: IEEE Trans. Electron Dev. 69 (2022) 4432.
10. Hatakeyama, Y.: AIP Adv. 12 (2022) 125224.
11. Zhang, H.: Micro Nanostruct. 178 (2023) 207579.
12. Khatun, M.: Heliyon 9 (2023) 20603.
13. Al Ahmed, S.R.: Energy Fuels 38 (2023) 1462.

Osvald, J., Stoklas, R., and Kordoš, P.: Low- and high-frequency capacitance of aluminum gallium nitride/gallium nitride heterostructures with interface traps, Mater. Sci in Semicond. Process. 31 (2015) 525-529.

1. Ziane, A.: J. Electron. Mater. 47 (2018) 5283.
2. Hoshii, T.: Japan. J. Applied Phys. 58 (2019) 061006.
3. Mao, W.: Applied Phys. Express 15 (2022) 016504.
4. Lin, X.Y.: IEEE Trans. Electron Dev. 70 (2023) 537.

Osvald, J., Stoklas, R., Kordoš, P., : Extraction of interface trap density of Al2O3/AlGaN/GaN MIS heterostructure capacitance. Phys. Status Solidi B 252 (2015) 996-1000.

1. Suria, A.J.: Semicond. Sci Technol. 31  (2016) 115017.
2. Yatabe, Z.: J. Phys. D 49  (2016) 393001.
3. Nishiguchi, K.: Japan. J. Applied Phys. 56 (2017) 101001.
4. Hashizume, T.: Mater. Sci Semicond. Process. 78 (2018) 85.
5. Kuzmin, M.: Adv. Mater. Interfaces 6 (2019) 1802033.
6. Ouduangvilai, K.: J. Semicond. Technol. Sci 19 (2019) 540.
7. Viswanathan, S.: Inter. J. Numer. Modell.-Electron. Networks Dev. Fields 35 (2022) 2936.

Gucmann, F., Gregušová, D., Stoklas, R., Dérer, J., Kúdela, R., Fröhlich, K., and Kordoš, P.: InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator, Applied Phys. Lett. 105 (2014) 183504.

1. Kim, S.-H.: IEEE Electron Device Lett. 36 (2015) 884.
2. Kim, S.-H.: J. Nanosci Nanotechnol. 16 (2016) 10389.
3. Akazawa, M.: Phys. Status Solidi B 254 (2017) 1600691.
4. Bazaka, K.: Nanoscale 10 (2018) 17494.
5. Kim, S.-H.: ACS Applied Mater. Interfaces 10 (2018) 26378.

Stoklas, R., Gregušová, D., Hušeková, K., Marek, J., and Kordoš, P.: Trapped charge effects in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 and ZrO2 gate insulator, Semicond. Sci Technol. 29 (2014) 045003.

 1. Yatabe, Z.: Japan. J. Applied Phys. 53 (2014) 100213.
2. Stuchlikova, L.: 10th Europ. Workshop on Microelectron. Education 2014. P. 116.
3. Mekni, O.: Ceramics Inter. 42 (2016) 8729.
4. Yatabe, Z.: J. Phys. D 49 (2016) 393001.
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13. Hebali, K.: Trans. Electr. Electron. Mater. 24 (2023) 250.

Kordoš, P., Stoklas, R., Gregušová, D., Hušeková, K., Carlin, J., Grandjean, N., : Defect states characterization of non-annealed and annealed Zr2/InAlN/GaN structures by capacitance measurements,. Applied Phys. Lett. 102 (2013) 063502.

1. Liu, X.: Applied Phys. Lett. 104 (2014) 263511.
2. Akazawa, M.: Phys. Status Solidi B 254 (2017) 1600691.
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5. Cui, P.: Japan. J. Applied Phys. 59 (2020) 020901.
6. Bordoloi, S.: IEEE Access 9 ((2021) 99828.

Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Stoklas, R., Blaho, M., Novotný, I., Križanová, Z., Novák, J., :Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization. Applied Surface Sci 267 (2013) 60-64.

1. Vidu, R.: Frontiers in Systems Neurosci 8 (2014) 91.
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4. Pampaloni, N.P.: Front. Neurosci 12 (2019) 953.

Hasenöhrl, S., Eliáš, P., Šoltýs, J., Stoklas, R., Laurenčíková, A., Novák, J., : Zinc-doped gallium phosphide nanowires for photovoltaic structures,. Applied Surface Sci 269 (2013) 72-76.

1. Chandiramouli, R.: Mater. Sci Engn. B 194 (2015) 55.
2. Lee, S.: ACS Applied Mater. & Interfaces 8 (2016) 16178.
3. Horley, P.: Physica E 83 (2016) 227.
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Gregušová, D., Hušeková, K., Stoklas, R., Blaho, M., Jurkovič, M., Carlin, J., Grandjean, N., and Kordoš, P.:Zr2/InAlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with InAlN barrier of different compositions. Japan. J. Applied Phys. 52 (2013) 08JN07.

1. Schaefer, A.: Semicond. Sci Technol. 29 (2014) 075005.
2. Freedsman, J. J.: Applied Phys. Lett. 107 (2015) 103506.
3. Liu, H.-Y.: IEEE J. Electron Devices Soc 4 (2016) 358.
4. Duan, T.: In Gallium Nitride Power Devices. Pan Stanford 2017. ISBN 978-981-4774-09-3. P. 145-191.
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6. Cui, P.: Japan. J. Applied Phys. 59 (2020) 020901.

Kordoš, P., Kúdela, R., Stoklas, R., Čičo, K., Mikulics, M., Gregušová, D., Novák, J., : Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition. Applied Phys. Lett. 100 (2012) 142113.

1. Wang, L.S.: Applied Phys. Lett. 103 (2013) 092901.
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Novák, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Stoklas, R., Laurenčíková, A., Mikulics, M., : Electrical and photoluminescence properties of individual GaP nanowires doped by zinc Phys. Status Solidi a 209 (2012) 2505-2509.

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