Ing. Ťapajna Milan, PhD.

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, Mater. Sci in Semicond Process.  91 (2019) 356-361.

1. Duong, D.N.: J. Applied Phys. 127 (2020) 094501.

Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., and Kuzmík, J.: Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs, Applied Surface Sci 528 (2020) 146824.

1. Tian, Y.: Inter. J. Electrochem. Sci 15 (2020) 12682.

Kučera, M., Adikimenakis, A., Dobročka, E., Kúdela, R., Ťapajna, M., Laurenčíková, A., Georgakilas, A., and Kuzmík, J.: Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates, Thin Solid Films 672 (2019) 114-119.

1. Andreev, B.A.: Semiconductors 53 (2019) 1357.
2. Cross, G. B.: J. Crystal Growth 536 (2020) 125574.
3. Wang, S.: Coatings 10 (2020) 1185.

Gucmann, F., Ťapajna, M., Pohorelec, O., Haščík, Š., Hušeková, K., and Kuzmík, J.: Creation of two-dimesional electron gas and role of surface donors in III-N metal-oxide-semiconductor high-electron mobility transistors, Phys. Status Solidi A  215 (2018) 1800090.

1. Song, K.: J. Phys. D 53 (2020) 345107.
2. Shi, Y.: IEEE Trans. Electron Dev. 67 (2020) 2290.
3. Duong D.N.: J. Applied Phys. 127 (2020) 094501.

Mikolášek, M., Fröhlich, K., Hušeková, K., Racko, J., Rehacek, V., Chymo, F., Ťapajna, M., and Harmatha, L.: Silicon based MIS photoanode for water oxidation: a comparison of RuO2 and Ni Schottky contacts, Applied Surface Sci 461 (2018) 48-53.

1. Quinn, J.: ACS Energy Lett. 4 (2019) 2632.
2. Silva, R.C.: Electron. Mater. Lett. 15 (2019) 645.
3. Hemmerling, J.: Adv. Energy Mater. 10 (2020) 1903354.
4. Li, O.L.: Applied Surface Sci 528 (2020) 146979.
5. Zhao, C.: ACS Applied Energy Mater. 3 (2020)‏ 8216.

Fröhlich, K., Kundrata, I., Blaho, M., Precner, M., Ťapajna, M., Klimo, M., Šuch, O., and Škvarek, O.: Hafnium oxide and tantalum oxide based resistive switching structures for realization of minimum and maximum functions, J. Applied Phys. 124 (2018) 152109.

1. Aguirre, F.L.: IEEE Access 8 (2020)‏ 202174.

Fröhlich, K., Kundrata, I., Blaho, M., Precner, M., Ťapajna, M., Klimo, M., Šuch, O., and Škvarek, O.: Performance of HfOx– and TaOx-based resistive switching structures in circuits for min and max functions implementation, MRS Adv. 3 (2018) Iss. 59, 3427-3432.

1. Garcia, H.: Microelectron. Engn. 216 (2019) 111083.

Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, I.V., Ťapajna, M., Fröhlich, K., Haščík, Š., Gregor, M., and Kuzmík, J.: Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition, Applied Surface Sci 461 (2018) 255-259.

1. Ber, E.: IEEE Trans. Electron Dev. 66 (2019) 2100.
2. Zhang, X.-Y.: Nanoscale Res. Lett. 14 (2019) 83.
3. Liu, M.: Chinese Phys. B 29 (‏ 127101(2020.

Ťapajna, M., Válik, L., Gucmann, F., Gregušová, D., Fröhlich, K., Haščík, Š., Dobročka, E., Tóth, L., Pécz, B., and Kuzmík, J.: Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density, J. Vacuum Sci Technol. B 35 (2017) 01A107.

1. Meer, M.: Semicond. Sci Technol. 32 (2017) 04LT02.
2. Duan, T. L.: Nanoscale Res. Lett. 12 (2017) 499.
3. Gao, J.: Physica Status Solidi A 215 (2018) 1700498.
4. Le, S.P.: J. Applied Phys. 123(2018) 034504.
5. Takhar, K.: Applied Surface Sci 481 (2019) 219.
6. Duong, D.N.: J. Applied Phys. 127 (2020) 094501.
7. Schiliro, E.: AIP Adv. 10 (2020) 125017.

Kuzmík, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M., Kúdela, R., Androulidaki, M., Pogany, D., and Georgakilas, A.: Current conduction mechanism and electrical break-down in InN grown on GaN, Applied Phys. Lett. 110 (2017) 232103.

1. Shen, L.: Applied Surface Sci 476 (2019) 418.

Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Toth, L., Pecz, B., Micusik, M., Brunner, F., and Kuzmík, J.: Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties, Applied Surface Sci 426 (2017) 656-661.

1. Huang, H.: J. Phys. D 51(2018) 345102.
2. Jo, Y.J.: Electron. Mater. Lett. 15 (2019) 179.
3. Shi, Y.: IEEE Trans. Electron Dev. 66 (2019) 4164.
4. He, F.: Chinese J. Catal. 41 (2020) SI9.
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6. Asubar, J.T.: IEEE Electron Dev. Lett. 41 (2020) ‏ 693.
7. Cai, Y.: Japan. J. Applied Phys. 59 (2020) 041001.
8. Low, R.S.: Applied Phys. Express 14 (2021) 031004.

Blaho, M., Gregušová, D.,  Haščík, Š., Ťapajna, M., Fröhlich, K., Šatka, A., and Kuzmík, J.: Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs, Applied Phys. Lett. 111 (2017) 033506.

1. Lee, C.-T.: AIP Adv. 4(2018) 045014.
2. Cui, P.: Sci Rep. 8 (2018) 9036.
3. Yahyazadeh, R.: J. Non-Oxide Glass. 11 (2019) 19.
4. Zhu, Q.: Chinese Phys. B 29 (2020) 047304.

Ťapajna, M., Stoklas, R., Gregušová, D., Válik, L., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Toth, L., Pecz, B., Micusik, M., Brunner, F., Hashizume, T., and Kuzmík, J.: On the origin of surface donors in AlGaN/GaN metal-oxide semiconductor heterostructures with Al2O3 gate dielectric—correlation of electrical, structural, and chemical properties. In: Inter. Workshop on Nitride Semicond. (IWN 2016) Orlando 2016.

1. Akazawa, M.: Phys. Status Solidi B 254 (2017) 1600691.

Ťapajna, M., Válik, L., Gregušová, D., Fröhlich, K., Gucmann, F., Hashizume, T., and Kuzmík, J.: Treshold voltage instabilities in AlGaN/GaN MOS-HEMTs with ALD-grown Al2O3 gate dielectrics: relation to distribution of oxide/semiconductor interface state density. In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 1-4.

1. Ding, L.: IEEE Conf. Computer Vision Pattern Recogn. 2018, pp. 6508-6516.

Ťapajna, M., Hilt, O., Bahat-Triedel, E., Würfl, H., and Kuzmík, J.: Gate reliability investigation in normally-off p-type-gan cap/AlGaN/GaN HEMTs under forward bias stress, IEEE Electron Device Lett. 37 (2016) 385 – 388.

1. Rossetto, I.: Microelectron. Reliab. 64 (2016) SI547.
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18. Zhang, L.: IEEE Electron Device Lett. 39 (2018) 1026.
19. Wang, L.: 9th Inter. Conf. Electron. Packaging Technol. (ICEPT) 2018, pp. 961-964.
20. Longobardi, G.: IEEE Inter. Conf. Electr. Systems For Aircraft, Railway, Ship Propulsion Road Vehicles & Inter. Transport. Electrif. Conf. (ESARS-ITEC) 2018.
21. Stockman, A.: IEEE Trans. Electron Dev. 65 (2018) 5365.
22. Tajalli, A.: Microelectron. Reliab. 88-90 (2018) SI572.
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28. Moens, P.: IEEE Inter. Reliab. Phys. Symp. – IRPS 2019.
29. Stoffels, S.: IEEE Inter. Reliab. Phys. Symp. – IRPS 2019.
30. Tallarico, A.N.: IEEE Electron Device Lett. 40 (2019) 518.
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35. Roccaforte, F.: Materials 12 (2019) 1599.
36. Wang, Z.: Nanoscale Res. Lett. 14 (2019) 128.
37. He, J.: IEEE Trans. Electron Dev. 66 (2019) 3453.
38. Masin, F.: Applied Phys. Lett. 115 (2019) 052103.
39. Shi, Y.: Proc. Inter. Symp. Power Semicond. Devices & ICs 2019, p. 423.
40. Yao, Y.: ICICDT 2019.
41. Zeng, C.: Applied Phys. Express 12 (2019) 121005.
42. del Alamo, J.A.: IEEE Trans. Electron Dev. 66 (2019) 4578.
43. Tallarico, A.N.: IEEE Trans. Electron Dev. 66 (2019) 4829.
44. Cui, P.: Applied Phys. Express 12 (2019) 104001.
45. Ge, M.: Chinese Phys. B 28 (2019) 107301.
46. Li, B.: IEEE Electron Device Lett. 40 (2019) 1389.
47. Wang, Z.: Proc. ISNE 2019, pp. 1-2.
#        48. Moens, P.: CS MANTECH 2019, Code 148134.
#        49. Meneghesso, G.: EDTM 2019, pp. 68-70.
#        50. Roy, C.: WiPDA 2019, pp. 181-186.
#        51. Longobardi, G.: ESARS-ITEC 2018 (2019) 8607788.
52. Wan, L.: Applied Phys. Lett. 116 (2020) 023504.
53. Wang, J.: IEEE Trans. Electron Dev. 67 (2020) 3564.
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56. Wang, C.: IEEE Electron Device Lett. 41 (2020) ‏ 545.
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58. Zhou, G.: IEEE Trans. Electron Dev. 67 (2020) 875.
59. Hamza, H.K.: Proc. ICDCS‘ 20‏ 2020, pp. 290-293.
60. Kini, R.L.: IEEE Access 8 (2020) 137312.
61. Subramanian, B.: J. Electronic Mater.‏ 49 (2020)‏ 4091.
62. Chen, T.: IEEE Applied Power Electron. Conf. Expos. – APEC 2020, pp. 2455-2461.
#     63. Zhang, X.: 21st Inter. Conf. Electronic Pack. Technol. – ICEPT 2020, Art. no. 9202882.
#     64. Cheng, W.-C.: IEEE 15th Intern. Conf. Solid-State Integrated Circuit Technol. – ICSICT 2020, Art. no. 9278368.
#   65. Husna Hamza, K.: 5th Inter. Conf. Devices, Circuits Systems – ICDCS 2020, pp. 290.
66. Zhang, L.: IEEE Electron Device Lett. 42 (2021) ‏ 22.
67. Sun, S.: Phys. Status Solidi A 218 (2021) SI2000565.
68. Jiang, H.: Semicond. Sci Technol. 36 (2021) 034001.

Blaho, M., Gregušová, D., Haščík, Š., Seifertová, A., Ťapajna, M., Šoltýs, J., Šatka, A., Nagy, L., Chvála, A., Marek, J., Carlin, J.-F., Grandjean, N., Konstantinidis, G., and Kuzmík, J.: Technology of integrated self-aligned E/Dmode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics, Semicond. Sci Technol. 31 (2016) 065011.

1. Kumar, S.: IEEE Calcutta Conf. – CALCON 2020, pp.‏ 378. ‏.

Ťapajna, M., Hilt, O., Bahat-Triedel, E., Würfl, H., and Kuzmík, J.: Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors, Applied Phys. Lett. 107 (2015) 193506.

1. De Santi, C.: IEEE Electron Device Lett. 37 (2016) 611.
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6. Dong, B.: AIP Adv. 6 (2016) 095021.
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13. Zhong, Y.: Applied Surface Sci 420 (2017) 817.
14. Kim, K.S.: Japan. J. Applied Phys. 56 (2017) 091002.
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18. De Santi, C.: Solid State Lighting Technol. Appl. Ser. 3 (2018) 15.
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35. Kato, D.: Japan. J. Applied Phys. 59 (2020) SGGD13.
36. Kim, K.: Japan. J. Applied Phys. 59 (2020) 030908.
37. Xu, H.: IEEE Trans. Power Electron. 36 (2021) 5904.

Gucmann, F., Gregušová, D., Válik, L., Ťapajna, M., Haščík, Š., Hušeková, K., Fröhlich, K., Pohorelec, O., and Kuzmík, J.: DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric prepared by various techniques. In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 9-12.

1. Hasan, Md. R.: J. Vacuum Sci Technol. B 35 (2017) 052202.

Blaho, M., Gregušová, D., Haščík, Š., Jurkovič, M., Ťapajna, M., Fröhlich, K., Dérer, J., Carlin, J., Grandjean, N., Kuzmík, J., : Self-aligned normally-off metal-oxide-semiconductor n+++GaN/InAlN/GaN high-electron mobility transistors. Phys. Status Solidi A 112 (2015) 1086-1090.

1. Yeh, P.-C.: Applied Phys. Express 8 (2015) 084101.
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6. Meneghini, M.: Mater. Sci Semicond. Process. 78 (2018) 118.
7. Duong, D.N.: J. Applied Phys. 127 (2020) 094501.

Gregušová, D., Jurkovič, M., Haščík, Š., Blaho, M., Seifertová, A., Fedor, J., Ťapajna, M., Fröhlich, K., Vogrinčič, P., Liday, J., Derluyn, J., Germain, M., and Kuzmík, J.: Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth. Applied Phys. Lett. 104 (2014) 013506.

1. Nagy, L.: IEEE Proc. 6828415 RADIOELEKTRONIKA 2014. ISBN: 978-1-4799-3714-1.
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Kuzmík, J., Jurkovič, M., Gregušová, D., Ťapajna, M., Brunner, F., Cho, E., Meneghesso, G., and Würfl, H.:Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown, J. Applied Phys. 115 (2014) 164504.

#        1. Jang, S.Y.: New Phys. 65 (2015) 1-13.
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Ťapajna, M., Killat, N., Palankovski, V., Gregušová, D., Čičo, K., Carlin, J., Grandjean, N., Kuball, M., and Kuzmík, J.: Hot-electron-related degradation in InAlN/GaN high-electron-mobility transistors,. IEEE Trans. Electron Dev. 61 (2014) 2793-2801.

1. Lee, G.-Y.: Applied Phys. Express 8 (2015) 064102.
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Ťapajna, M., Jurkovič, M., Válik, L., Haščík, Š., Gregušová, D., Brunner, F., Cho, E., Hashizume, T., and Kuzmík, J.: Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations. J. Applied Phys. 116 (2014) 104501.

1. Zhu, J.-J.: IEEE Trans. Electron Dev. 62 (2015) 512.
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Ťapajna, M., Válik, L., Kotara, P., Zhytnytska, R., Brunner, F., Hilt, O., Bahat-Triedel, E., Würfl, H., and Kuzmík, J.: Impact of the buffer structure on trapping characteristics of normally-off p-GaN/AlGaN/GaN HEMTs for power switching applications In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 121-124.

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