Mgr. Gaži Štefan

Štrbík, V., Beňačka, Š., Gaži, Š., Španková, M., Šmatko, V., Knoška, J., Gál, N., Chromik, Š., Sojková, M., and Pisarčík, M.: Superconductor-ferromagnet-superconductor nanojunctions from perovskite materials, Applied Surface Sci 395 (2017) 237-240.

1. Ma, L.: Sensors Actuators B 255 (2018) 2546.
2. Liu, X.: J. Alloys Compounds 772 (2019) 263.

Tsindlekht, M.I., Genkin, V.M., Felner, I., Zeides, F., Katz, N., Gaži, Š., Chromik, Š., Dobrovolskiy, O.V., Sachser, R., and Huth, M.: Magnetic moment jumps in flat and nanopatterned Nb thin-walled cylinders, Physica C 533 (2017) 101-104.

1. Margulis, V.A.: Nanosystems-Phys. Chem. Mathem. 9 (2018) 244.

Žemlička, M., Neilinger, P., Trgala, M., Rehak, M., Manca, D., Grajcar, M., Szabó, P., Samuely, P., Gaži, Š., Hübner, U., Vinokur, V., and Iľichev, E.: Finite quasiparticle lifetime in disordered superconductors, Phys. Rev B 92 (2015) 224506.

1. Blien, S.: Physica Status Solidi B 253 (2016) 2385.
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5. Kapria, P.: Europ. Phys. J. B 90 (2017) 33.
6. Seibold, G.: Phys. Rev. B 96 (2017) 144507.
7. Pracht, U.S.: Phys. Rev. B 96 (2017) 094514.
8. Kapri, P.: Physica E 99 (2018) 67.
9. Kapri, P.: European Phys. J. B 91 (2018) 12.
10. Kapri, P.: Physica E 103 (2018) 383.
11. Mauskopf, P.D.: Publ. Astronom. Soc Pacific 130 (2018) 082001.
12. Basset, J.: Applied Phys. Lett. 113 (2019) 102601.
13. Maccari, I.: Phys. Rev. B 99 (2019) 104509.

Tsindlekht, M., Genkin, V., Felner, I., Zeides, F., Katz, N., Gaži, Š., Chromik, Š., : dc and ac magnetic properties of thin-walled superconducting niobium cylinders. Phys. Rev. B 90 (2014) 014514.

1. Aburas, M.: Supercond. Sci Technol.  30 (2017) 015009.
2. Ptok, A.: Comm. Comput. Phys. 21 (2017) 748.
3. Demchenko, I.N.: Applied Surface Sci 399 (2017) 32.
4. Demchenko, I.N.: J. Electron Spectrosc. Related Phenomena 224 (2018) SI 17.

Bystritsky, V.M., Bystritskii, Vit.M., Dudkin, G.N., Filipowicz, M., Gaži, Š., Huran, J., Nechaev, B.A., Padalko, V.N., Parzhitskii, S.S., Penkov, F.M., Philippov, A.V., and Tuleshev, Yu.Zh.: First experimental evidence of D(p, ᵧ)3He reaction in deuteride titanium in ultralow collision energy region, Nuclear Instr. Methods Phys. Res. A 753 (2014) 91-96.

1. Bagulya, A. V.: Phys. Particl. Nuclei 48 (2017) 691.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Tuleushev, Y., : Effect of the crystal structure of a deuterated target on the yield of neutrons in the dd reaction at ultralow energies. JETP Lett. 99 (2014) 497-502.

1. Molodets, A.M.: Phys. Solid State 56 (2014) 2524.
2. Bagulya, A.V.: J. Surface Invest. 11 (2017) 58.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Tuleushev, Y., Varlachov, V., : Experimental verification of hypothesis of dd reaction enhancement by channeling of deuterons in titanium deuteride at ultralow energies,. Nuclear Instr. Methods Phys. Res. A 764 (2014) 42-47.

 1. Bagulya, A.V.: Nuclear Instr. Methods in Phys. Res. B  402 (2017) 243.
2. Bagulya, A. V.: Phys. Particl. Nuclei 48 (2017) 691.
3. Choudhury, R.K.: EPL 126 (2019) 12002.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Tuleushev, Y., : First experimental evidence of D(p, ᵧ)3He reaction in titanium deuteride in ultralow collision energy region,. J. Experiment. Theoret. Phys. 119 (2014) 54-62.

       1. Bagulya, A.V.: J. Surface Invest. 11 (2017) 58.

Bystritsky, V., Kobzev, A., Krylov, A., Parzhitskii, S., Philippov, A., Dudkin, G., Nechaev, B., Padalko, V., Penkov, F., Tuleushev, Y., Filipowicz, M., Bystritsky, V., Gaži, Š., Huran, J., : Study of the d(p, ᵧ)3He reaction at ultralow energies using a zirconium deuteride target,. Nuclear Instr. Methods Phys. Res. A 737 (2014) 248-252.

1. Purcell, J.E.: Nuclear Data Sheets 130 (2015) 1.
2. Bagulya, A. V.: Phys. Particl. Nuclei 48 (2017) 691.

Trgala, M., Žemlička, M., Neilinger, P., Rehak, M., Leporis, M., Gaži, Š., Greguš, J., Plecenik, T., Roch, T., Dobročka, E., Grajcar, M., : Superconducting MoC thin films with enhanced sheet resistance. Applied Surface Sci 312 (2014) 216-219.

1. Jiao, G.: Applied Phys. A 120 (2015) 579.
2. Zou, J.: Acta Metall. Sinica 53 (2017) 31.

Tsindlekht, M., Genkin, V., Gaži, Š., and Chromik, Š.: AC conductivity of a niobium thin film in a swept magnetic field, J. Phys.: Cond. Matt. 25 (2013) 085701.

        1. Kang, N.L.: AIP Adv. 3 (2013) 072104.

Šoltýs, J., Gaži, Š., Fedor, J., Tóbik, J., Precner, M., and Cambel, V.: Magnetic nanostructures for non-volatile memories. Microelectr. Engn. 110 (2013) 474-478.

        1. Hluchy, L.: Comput. Informat. 35 (2016) 1386.

Cambel, V., Tóbik, J., Šoltýs, J., Fedor, J., Precner, M., Gaži, Š., and Karapetrov, G.: The influence of shape anisotropy on vortex nucleation in Pacman-like nanomagnets,. J. Magnetism Magnetic Mater. 336 (2013) 29-36.

1. Galvao, S.B.: Mater. Lett. 115 (2014) 38.
2. Hluchy, L.: Comput. Informat. 35 (2016) 1386.
3. Zheng, Y.: Rep. Progress in Phys. 80 (2017) 086501.
4. Ziegelwanger, H.: J. Comput. Phys. 346 (2017) 152.

Bystritsky, V.M., Bystritskii, Vit.M., Dudkin, G.N., Filipowicz, M., Gaži, Š., Huran, J., Kobzev, A.P., Mesyats, G.A., Nechaev, B.A., Padalko, V.N., Parzhitskii, S.S., Penkov, F.M., Philippov, A.V., Kaminskii, V.L., Tuleshev, Yu.Zh., and Wozniak, J.: Investigation of temperature dependence of neutron yield and electron screening potentials for d(d,n)3He reaction proceeding in deuterides ZrD2 and TiD2, Phys. Atomic Nuclei 75 (2012) 913-922.

1. Choudhury, R.K.: EPL 126 (2019) 12002.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Kobzev, A., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Kaminskii, V., Tuleushev, Y., Wozniak, J., :Measurement of astrophysical S factors and electron screening potentials for d(d,n)3He reaction in ZrD2, TiD2, D2D, and CD2 targets in the ultralow energy region using plasma accelerators. Phys. Atomic Nuclei 75 (2012) 53-62.

1. Bagulya, A. V.:  Bull. Lebedev Phys. Inst. 39 (2012) 325.
2. Tsyganov, E.N.: Nuclear Instr. Methods in Phys. Res. B  355 (2015) 333.

Nurgaliev, T., Blagoev, B., Mateev, E., Štrbik, V., Beňačka, Š., Šmatko, V., Gaži, Š., and Chromik, Š.:  Planar homogeneity of the electrical properties of YBa2Cu3O7/La0.7Sr0.3MnO3 bi-layers , J. Phys.: Conf. Ser. 356 (2012) 012020.

1. Marinov, G.: Optical Mater. 89 (2019) 390.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Kobzev, A., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Kaminskii, V., Tuleushev, Y., Wozniak, J., :Measurement of astrophysical S-factors and electron screening potentials for View the MathML source reaction in ZrD2, TiD2 and TaD0.5 targets in the ultralow energy region using plasma accelerator. Nuclear Phys. A 889 (2012) 93-104.

1. Xu, Y.: Nuclear Phys. A 918 (2013) 61.
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3. Tsyganov, E.N.: Nuclear Instr. Methods in Phys. Res. B  355 (2015) 333.
4. Choudhury, R.K.: EPL 126 (2019) 12002.

Štrbik, V., Beňačka, Š., Gaži, Š., Šmatko, V., Chromik, Š., Laurenčíková, A., Vávra, I., : Effect of gallium focused ion beam irradiation on properties of YBa2Cu3Ox/La0,67Sr0,33MnO3 heterostructures. J. Electr. Engn. 62 (2011) 109-113.

1. Cui, A.: Sci Rep 3 (2013) 2429.
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Stoklas, R., Gregušová, D., Gaži, Š., Novák, J., and Kordoš, P.: Performance of AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors with AlN gate insulator prepared by reactive magnetron sputtering. J. Vacuum Sci Technol. B 29 (2011) 01A809.

1. Shih, H.-A.: Japan. J. Applied Phys. 51 (2012) Part 2 02BF01.
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Fröhlich, K., Hudec, B., Aarik, J., Tarre, A., Machajdík, D., Kasikov, A., Hušeková, K., Gaži, Š., : Post-deposition processing and oxygen content of TiO2-based capacitors. Microelectr. Engn. 88 (2011) 1525-1528.(APVV 0133-07).

      1. Bayati, M.: J. Mater. Res. 28 (2013) SI1669.

Valovič, A., Huran, J., Kučera, M., Kobzev, A., Gaži, Š., : Properties study of silicon carbide thin films prepared by electron cyclotron resonance plasma technology. European Phys. J. Applied Phys. 56 (2011) 24013.

       1. Omar, M.F.: IEEE 4th Inter. Conf. Photonics 2013, Art. no. 6687098, Pp 154.

Čičo, K., Gregušová, D., Gaži, Š., Šoltýs, J., Kuzmík, J., Carlin, J., Grandjean, N., Pogany, D., and Fröhlich, K.: Optimization of the ohmic contact processing in InAlN/GaN high electron mobility transistors for lower temprerature of annealing, Phys. Status Solidi c 7 (2010) 108-111.

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6. Yoshida, T.: Japan. J. Applied Phys. 57 (2018) 110302.
7. Lin, Y.-K.: Semicond. Sci Technol.33 (2018) 095019.

Gregušová, D., Gaži, Š., Sofer, Z., Stoklas, R., Dobročka, E., Mikulics, M., Greguš, J., Novák, J., and Kordoš, P.: Oxidized Al film as an insulation layer in AlGaN/GaN Metal–Oxide–Semiconductor heterostructure field effect transistors, Japan. J. Applied Phys. 49 (2010) 046504.

1. Ozen, S.: Mater. Res. Express 3 (2016) 045012.
2. Kanaga, S.: IEEE Inter. Conf. Electron. Comput. Comm. Technol. 2018.

Kordoš, P., Stoklas, R., Gregušová, D., Gaži, Š., and Novák, J.: Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurement. Applied Phys. Lett. 96 (2010) 013505.

1. Zeng, H.Z.: J. Applied Phys. 107 (2010) 084508.
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Tarenkov, V., D’yachenko, A., Sidorov, S., Bolchenko, V., Bolchenko, D., Chromik, Š., Štrbik, V., Gaži, Š., Španková, M., and Beňačka, Š.: Electron tunneling spectroscopy of the phonon spectrum of MgB2 Phys. Solid State 51 (2009) 1778-1784.

1. Markovskiy, N. D.: Phys. Rev. B 83 (2011) 174301.
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Stoklas, R., Gaži, Š., Gregušová, D., Novák, J., Kordoš, P., : Enhancement of effective carrier velocity in AlGaN/GaN MOSHFETs with Al2O3 gate oxide. Physica Status Solidi c 5 (2008) 1935-1937.

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Kordoš, P., Gregušová, D., Stoklas, R., Gaži, Š., and Novák, J.: Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness, Solid-State Electr. 52 (2008) 973-979.

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Ťapajna, M., Rosová, A., Dobročka, E., Štrbik, V., Gaži, Š., Fröhlich, K., Benko, P., Harmatha, L., Manke, C., Baumann, P., : Work function thermal stability of RuO2-rich Ru–Si–O p-channel metal-oxide-semiconductor field-effect transistor gate electrodes. J. Applied Phys. 103 (2008) 073702.

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Vávra, O., Gaži, Š., Golubovič, J., Vávra, I., Dérer, J., Verbeeck, J., van Tendeloo, G., and Moshchalkov, V.: 0 and π phase Josephson coupling through an insulating barrier with magnetic impurities. Phys. Rev. B 74 (2006) 020502.

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Chromik, Š., Gaži, Š., Štrbik, V., Španková, M., Vávra, I., Beňačka, Š., van der Beek, C., and Gierlowski, P.:Electrical and structural properties of MgB2 films prepared by sequential deposition of B and Mg on the NbN-buffered Si(100) substrate. J. Applied Physics 96 (2004) 4668-4670.

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Vávra, O., Gaži, Š., Vávra, I., Dérer, J., and Kováčová, E.: High efficiency Andreev reflection observed in Nb/Fe0.5Si0.5/Nb Josephson junctions. Physica C 404 (2004) 395-399.

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Tesař, R., Koláček, R., Kawate, E., Beňačka, Š., Gaži, Š., Šimša, Z., : Far-infrared thermal spectroscopy of low-Tc and high-Tc superconductor films. Supercond. Sci Technol. 16 (2003) 916-920.

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Španková, M., Vávra, I., Chromik, Š., Gaži, Š., Štrbik, V., Kúš, P., Machajdík, D., Beňačka, Š., : Improvement of the superconducting properties of YBCO thin films upon annealing of CeO2/Al2O3 substrate. Thin Solid Films 416 (2002) 254-259.

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Vávra, O., Gaži, Š., Bydžovský, J., Dérer, J., Kováčová, E., Frait, Z., Marysko, M., Vávra, I., : Study of the proximity effect in the Nb′/FexSi1−x/Nb tunnel junctions. J. Magnetism Magnetic Mater. 240 (2002) 583-585.

      1. Halterman, K.: Phys. Rev. B 70 (2004) 104516.

Chromik, Š., Beňačka, Š., Gaži, Š., Štrbik, V., Öszi, Z., Kostič, I., : Superconducting properties of MgB2 thin films prepared by sequential deposition of boron and magnesium. Vacuum 69 (2002) 351-356.

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Chromik, Š., Cannaerts, M., Gaži, Š., van Haesendonck, C., Španková, M., Kúš, P., Beňačka, Š., : The influence of (1 View the MathML source 0 2) sapphire substrate on structural perfection of CeO2 thin films. Physica C 371 (2002) 301-308.

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