Mgr. Šichman Peter

Stoklas, R., Chvála, A., Šichman, P., Hasenöhrl, S., Haščík, Š., Priesol, J., Šatka, A., and Kuzmík, J.: Analysis and modeling of vertical current conduction and breakdown mechanisms in semi-insulating GaN grown on GaN: role of deep levels, IEEE Trans. Electron Dev. 68 (2021) 2365.

1. Kim, H.: J. Electron. Mater. 50 (2021) 6688.
2. Qin, Y.: J. Phys. D 56 (2023) 093001.

Šichman, P., Hasenöhrl, S., Stoklas, R., Priesol, J., Dobročka, E., Haščík, Š., Gucmann, F., Vincze, A., Chvála, A., Marek, J., Šatka, A., and Kuzmík, J.: Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure, Mater. Sci Semicond. Process. 118 (2020) 105203.

1. Mochizuki, K.: Japan. J. Applied Phys. 60 (2021) 018002.
2. Pan, Y.: Inter. J. Energy Res. 45 (2021) 15512.
3. Qin, Y.: J. Phys. D 56 (2023) 093001.

Gregušová, D., Blaho, M., Haščík, Š., Šichman, P., Laurenčíková, A., Seifertová, A., Dérer, J., Brunner, F., Wurfl, J., and Kuzmík, J.: Polarization-engineered n⁺GaN/InGaN/AlGaN/GaN normally-off MOS HEMTs, Physica Status Solidi a 214 (2017) 1700407.

1. Tokuda, H.: Japan. J. Applied Phys. 59 (2020) 084002.
2. Tapajna, M.: Crystals 10 (2020) 1153.
3. Biswas, D.: Mater. Sci Semicond. Process. 135 (2021) 106109.
4. Li, J.L.: Superlatt. Microst. 161 (2022) 107064.