Mgr. Zaťko Bohumír, PhD.

Kubanda, D., Zaťko, B., Šagátová, A., Žemlička, J., Zápražný, Z., Boháček, P., Dudák, J., Kováčová, E., and Nečas, V.: Performance of bulk semi-insulating GaAs-based sensor and its comparison to Si-based sensor for Timepix radiation camera, J. Instrument. 14 (2019) C01023.

#     1. Xu, J.: Rengong Jingti Xuebao/J. Synthetic Crystals 48 (2019) 975.

Zaťko, B., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Kováčová, E., and Nečas, V.: Neutron detection using epitaxial 4H-SiC detector structures. In: ASDAM 2018. IEEE 2018. ISBN 978-1-5386-7488-8. P. 41-44.

1. Slavicek, T.: J. Instrument. 15 (2020) C01036.

Hrubčín, L., Gurov, J.B., Zaťko, B., Ivanov, O.M., Mitrofanov, S.V., Rozov, S.V., Sandukovskij, V.G., Semin, V.A., and Skuratov, V.A.: A study of the radiation hardness of Si and SiC detectors using a Xe ion beam, Instrum. Experiment. Techn. 61 (2018) 769-771.

1. Kandlakunta, P.: Nuclear Instr. Methods in Phys. Res. A 953 (2020) 163110.

Šagátová, A., Zaťko, B., Nečas, V., Dubecký, F., Tu, L.A., Sedlačková, K., Boháček, P., and Zápražný, Z.: From single GaAs detector to sensor for radiation imaging camera, Applied Surface Sci 461 (2018) 3-9.

1. Xu, L.: Materials 12 (2019) 1192.
2. Turkington, G.: J. Instrument. 14 (2019) P10018.
#     3. Xu, J.: Rengong Jingti Xuebao/J. Synthetic Crystals 48 (2019) 975.
4. Chen, J.: Precision Engn.-J. Inter. Soc for Precision Engn. Nanotechnol. 62 (2020) 71.

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Zápražný, Z., Sedlačková, K., Sekáčová, M., Dubecký, F., Skuratov, V.A., Korytár, D., and Nečas, V.: Schottky barrier detectors based on high quality 4H-SIC semiconductor: electrical and detection properties, Applied Surface Sci 461 (2018) 276-280.

1. Zhou, Y.: Carbon 148 (2019) 387.
2. Dong, P.: IEEE Access 7 (2019) 170385.
3. Sarac, Y.: J. Alloys Comp. 824 (2020) 153899.
4. Xie, X.-M.: Trans. Nonferr. Metals Soc China‏ 30 (2020)‏ 3058.

Zaťko, B., Zápražný, Z., Jakůbek, J., Šagátová, A., Boháček, P., Sekáčová, M Korytár, D., Nečas, V., Žemlička, J., Mora, Y., and Pichotka, M.: Imaging performance of Timepix d etector based on semi-insulating GaAs, J. Instrument. 13 (2018) C01034.

1. Veale, M. C.: J. Phys. D 52 (2019) 085106.
2. Curtis, T.E.: J. Medical Imaging 6 (2019) 013501.

Šagátová, A., Zaťko, B., Dubecký, F., Ly Anh, T., Nečas, V., Sedlačková, K., Pavlovič, M., and Fulop, M.: Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons, Applied Surface Sci 395 (2017) 66-71.

1. Turkington, G.: Nuclear Instr. Methods in Phys. Res. A 911 (2018) 55.
2. Ni, W.: Radiation Phys. Chem. 152 (2018) 43.
3. Geremew, A.K.: Nanoscale 11 (2019) 8380.
4. Xu, Y.-C.: J. Phys. Chem. Solids 127 (2019) 76.
#     5. Turkington, G.: Proc. IEEE Nuclear Sci Symp. Medical Imag. Conf. NSS/MIC 2018, no. 8824504.
6. Kruchonak, U.: Nuclear Instr. Methods in Phys. Res. A  975 (2020) 164204.
7. Peng, J.: Nuclear Instr. Methods in Phys. Res. A  969 (2020) 164017.
8. Chen, J.: Precision Engn.-J. Inter. Soc for Precision Engn. Nanotechnol. 62 (2020) 71.
9. Shen, Y.: Nanomater. 10 (2020) 340.
10. He, J.: Optical Mater.‏ 111 (2021) 110611.

Zaťko, B., Šagátová, A., Sedláčková, K., Boháček, P., Sekáčová, M., Kohout, Z., Granja, C., and Nečas, V.: Radiation detector based on 4H-SiC used for thermal neutron detection, J. Instrument. 11 (2016) C11022.

#    1. Anderson, P.: Proc. Inter. Workshop on Future Linear Colliders – LCWS 2016.
2. Liu, L.: Sensors Actuators A 280 (2018) 245.
3. Pavlovic, M.: AIP Conf. Proc. 1996 (2018) 020037.
4. Zhuraev, K.N.: J. Engn. Phys. Thermophys.‏ 93 (2020) 1036.

Sedlačková, K., Šagátová, A., Zaťko, B., and Nečas, V., Solard, M., and Granja, C.:  MCNPX simulations of the silicon carbide semiconductor detector response to fast neutrons from D-T nuclear reaction, Inter. J. Modern Phys.: Conf. Ser. 44 (2016) 1660226.

1. Pavlovic, M.: AIP Conf. Proc. 1996 (2018) 020037.

Šagátová, A., Kubanda, D., Zaťko, B., Sedláčková, K., Nečas, V., Solar, M., and Granja, C.: Semi-insulating GaAs based detector of fast neutrons produced by D–T nuclear reaction, J. Instrument. 11 (2016) C12002.

1. Pavlovic, M.: AIP Conf. Proc. 1996 (2018) 020037.

Zaťko, B., Šagátová, A., Sedlačková, K., Nečas, V., Dubecký, F., Solard, M., and Granja, C.: Detection of fast neutrons from D-T nuclear reaction using 4H-SiC radiation detector, Inter. J. Modern Phys.: Conf. Ser. 44 (2016) 1660235.

1. Pavlovic, M.: AIP Conf. Proc. 1996 (2018) 020037.

Zaťko, B., Dubecký, F., Šagátová, A., Sedlačková, K., and Ryć, L.: High resolution alpha particle detectors based on 4H-SiC epitaxial layer, J. Instrument. 10 (2015) C04009.

 1. Torrisi, L.: J. Electronic Mater. 46 (2017) 4242.
2. Liu, L.Y.: Diamond Related Mater. 73 (2017) 177.
3. Chernykh, S.V.: Nuclear Instr. Methods in Phys. Res. A 845 (2017) 52.
4. Sciuto, A.: J. Electron. Mater. 46 (2017) 6403.
5. Zhao, S.: Nuclear Instr. Methods in Phys. Res. A 910 (2018) 35.
6. Chernykh, A.V.: Technical Phys. Lett. 44 (2018) 942.
7. Ye, X.: Chinese Phys. B 27 (2018) 087304.
8. Taylor, N.R.: J. Radioanalyt. Nuclear Chem. 320 (2019) 441.
9. Sandupatla, A.: Micromach. 11 (2020) 519.
10. Chaudhuri, S.K.: J. Applied Phys. 128 (2020) 114501.

Gurov, J., Rozov, S., Sandukovskij, V., Jakušev, E., Hrubčín, L., Zaťko, B., : Characteristics of silicon carbide detectors. Instrum. Experiment. Techn. 58 (2015) 22-24.

      1. Torrisi, L.: J. Electronic Mater. 46 (2017) 4242.
2. Sciuto, A.: J. Electron. Mater. 46 (2017) 6403.

Zaťko, B., Sedlačková, K., Dubecký,  F., Šagátová, A., Boháček, P., and Nečas, V.: Semiconductor detector based on 4H-SiC and analysis of its active region thickness, J. Instrument. 9 (2014) C05041.

1. Raja, P. V.: J. Instrument. 12 (2017) P08006.

Šagátová, A., Zaťko, B., Pavlovič, M., Sedlačková, K., Hybler, P., Dubecký, F.,  and Nečas, V.: GaAs detectors irradiated by low doses of electrons, J. Instrument. 9 (2014) C04036.

1. Lioliou, G.: J. Applied Phys. 119 (2016) 124507.
2. Lioliou, G.: Nuclear Instr. Methods in Phys. Res. A  813 (2016) 1.
3. Lioliou, G.: Nuclear Instr. Methods in Phys. Res. A  836 (2016) 37.
4. Lioliou, G.: J. Applied Phys. 122 (2017) 244506.
5. Lioliou, G.: X-Ray Spectrometry 47 (2018) 201.
6. Lioliou, G.: J. Geophys. Res.-Space Phys. 123 (2018) 7568.
7. Torrisi, A.: Nuclear Instr. Methods in Phys. Res. A 922 (2019) 250.
8. Lioliou, G.: Nuclear Instr. Methods in Phys. Res. A  946 (2019) 162670.
9. Peng, J.: Nuclear Instr. Methods in Phys. Res. A 969 (2020) 164017.

Šagátová, A., Zaťko, B., Sedlačková, K., Pavlovič, M., Fulop, M., Boháček, P., and Nečas, V.: GaAs detectors irradiated by electrons at different dose rates, J. Instrument. 9 (2014) C12050.

1. Ozden, S.: Inter. J. Surface Sci Engn. 13 (2019) 79.
2. Peng, J.: Nuclear Instr. Methods in Phys. Res. A 969 (2020) 164017.

Sedlačková, K., Zaťko, B., Šagátová, A., Pavlovič, M., Nečas, V., and Stacho, M.: MCNPX Monte Carlo simulations of particle transport in SiC semiconductor detectors of fast neutrons. J. Instrument. 9 (2014) C05016.

     1. Tripathi, S.: INDICON 2015. IEEE ISBN: 978-146737399-9. Art. no. 7443467.
2. Tripathi, S.: Nuclear Sci Techniq. 28 (2017) 154.
3. Tripathi, S.: J. Instrument. 13 (2018) P05026.
4. Parida, M. K.: J. Instrument. 13 (2018) P03006.
5. Tripathi, S.: Lecture Notes in Electr. Engn. 442 (2018) 189.

Sedlačková, K., Zaťko, B., Šagátová, A., and Nečas, V.: Monte Carlo simulations of the particle transport in semiconductor detectors of fast neutrons, Nuclear Instr. Methods Phys. Res. A 709 (2013) 63-67.

 1. Meshkian, M.: Nuclear Instr. and Methods in Phys. Res. A 788 (2015) 73.
2. Tripathi, S.: INDICON 2015. IEEE ISBN: 978-146737399-9. Art. no. 7443467.
3. Chernykh, A.V.: J. Instrument. 10 (2016) C01021.
4. Chernykh, A.V.: J. Instrument. 11 (2016) C12005.
5. Tripathi, S.: Nuclear Sci Techniq. 28 (2017) 154.
6. Pavlovic, M.: AIP Conf. Proc. 1996 (2018) 020037.

Sedlačková, K., Zaťko, B., Šagátová, A., Nečas, V., : Properties of SiC semiconductor detector of fast neutrons investigated using MCNPX code. In: Proc. 19th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2013). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2013. ISBN 978-80-227-3956-6. P. 62-65. (APVV 0321-11).

        1. Tan, K.S.: Inter. J. Thermal Sci 87 (2015) 169.
2. Tan, K.S. AIP Conf. Proc. 1865 (2017) 050011.

Šagátová, A., Zaťko, B., Sedlačková, K., Nečas, V., Dubecký, F., Boháček, P., and Chodák, I.: Semi-insulating GaAs detectors optimized for fast neutron detection, J. Instrument. 8 (2013) C03016.

 1. Chernykh, A.V.: J. Instrument. 10 (2016) C01021.
2. Chernykh, A.V.: J. Instrument. 11 (2016) C12005.
3. Pavlovic, M.: AIP Conf. Proc. 1996 (2018) 020037.
4. Chernykh, S.V.: Instrum. Experiment. Techniq. 62 (2019) 312.
5. Zhu, Z.: Chinese Phys. B 29 (2020) 090401.

Zaťko, B., Dubecký, F., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Nečas, V., : Detector of fast neutrons based on silicon carbide epitaxial layers. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 151-154.

       1. Liu, L.Y.: Diamond Related Mater. 73 (2017) 177.
#     2. Ouyang, X.: Yuanzineng Kexue Jishu/Atomic Energy Sci Technol. 53 (2019) 1999.

Dubecký, F., Gombia, E., Ferrari, C., Zaťko, B., Vanko, G., Baldini, M., Kováč, J., Baček, D., Kováč, P., Hrkút, P., and Nečas, V.: Characterization of epitaxial 4H-SiC for photon detectors. J. Instrument. 7 (2012) P09005.

1. Liu, L.-Y.: Sensors (2017) 2334.

Zaťko, B., Sedlačková, K., Dubecký, F., Boháček, P., Sekáčová, M., and Nečas, V.: Detection of fast neutrons using detectors based on semi-insulating GaAs. J. Instrument. 6 (2011) C12047.

1. Chernykh, A.V.: J. Instrument. 10 (2016) C01021.
2. Chernykh, A.V.: J. Instrument. 11 (2016) C12005.
3. Hodgson, M.: Measurement Scie Technol. 28 (2017) 105501.
4. Chernykh, S.V.: Instrum. Experimen. Techniq. 62 (2019) 312.
5. Ozden, S.: Inter. J. Surface Sci Engn. 13 (2019) 79.

Zaťko, B., Dubecký, F., Boháček, P., Huran, J., Nečas, V., and Ryc, L.: Development and evaluation of semi-insulating GaAs detectors in hot plasmas diagnostics, Nuclear Instr. Methods Phys. Res. A 633 (2011) S131-S133.

1. Chernykh, S.V.: Instrum. Experimen. Techniq. 61 (2018) 665.
2. Gao, R.L.: Sci China-Phys. Mechan. Astron. 62 (2019) 122012.

Huran, J., Zaťko, B., Boháček, P., Shvetsov, V., Kobzev, A., : Study of wide band gap nanocrystalline silicon carbide films for radiation imaging detectors. Nuclear Instr. Methods Phys. Res. A 633 (2011) S75-S77. (APVV 0713-07).

           1. Jha, H.S.: J. Mater. Sci-Mater. Electron. 26 (2015) 1381.
#        2. Wan, M.:  Zhenkong Kexue yu Jishu Xuebao/J. Vacuum Sci Technol. 35 (2015) 424.

Dubecký, F., Zaťko, B., Hubík, P., Gombia, E., Boháček, P., Huran, J., : A new kind of quasi-ohmic metallization in semi-insulating GaAs: Study of electrical characteristics. Nuclear Instr. and Methods in Phys. Res. A 607 (2009) 132-134. (VEGA 2/7170/27).

  1. Leau W.: Applied Surface Sci 257 (2011) 7286.

Zaťko, B., Dubecký, F., Přibil, J., Boháček, P., Frollo, I., Ščepko, P., Mudroň, J., Grybos, P., Nečas, V., : On the development of portable X-ray CT mini-system using semi-insulating GaAs radiation imaging detectors. Nuclear Instrum. Methods in Phys. Res. A 607 (2009) 67-70.

     1. Mouleeswaran, D.: J. Crystal Growth 362 (2013) 238.

Přibil, J., Zaťko, B., Frollo, I., Dubecký, F., Ščepko, P., Mudroň, J., : Quantum imaging X–ray CT systems based on GaAs radiation detectors using perspective imaging reconstruction techniques, Measurement Sci Rev. 9, Sec. 3 (2009) 27-32.

*    1. Avenel-Le Guerroue, M.L.: PhD Thesis. Grenoble: CEA – LETI – Direction de la Recherche Technologique 2012.
2. Wells, K.: Applied Radiat. Isotopes 70 (2012) 1729.
3. Jin, G.: Measurement Sci Rev. 12 (2012) 296.
4. D’Aillon, E.G.: Nuclear Instrum. Methods in Phys. Res. A 727 (2013) 126.

Šagátová-Perďochová, A., Dubecký, F., Zaťko, B., Chodák, I., Ladzianský, M., and Nečas, V.: Detectors of fast netrons based on semi-insulating GaAs with neutron converter layers, Nuclear Instr. and Methods in Phys. Res. A 576 (2007) 56-69.

1. Guo, J.M.: Nuclear Instr. and Methods in Phys. Res. A 605 (2009) 69.
2. Dizaji, H.: Chinese Phys. Lett. 31 (2014) 012901.
3. Chernykh, A.V.: J. Instrument. 10 (2015) C01021.
4. Kasani, H.: J. Electron. Mater. 46 (2017) 2548.
5. Chernykh, S.V.: Instrum. Experimen. Techniq. 62 (2019) 312.

Zaťko, B., Dubecký, F., Procházková, O., and Nečas, V.: Role of electrode metalllization in the performance of bulk semi-insulating InP radiation detectors, Nuclear Instr. and Methods in Phys. Res. A 576 (2007) 98-102.

*  1. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.
2. Bilgili, A.K.: J. Applied Phys. 125 (2019) 035704.

Huran, J., Zaťko, B., Hotový, I., Petzold, J., Kobzev, A., Balalykin, N., : PECVD silicon carbide deposited at different temperatures Czechoslov. J. Phys. B 56 (2006) S1207-S1211.

     1. Hong, R.D.: Spectroscopy Lett. 43 (2010) 298.
2. Cheng, C.-H.: IEEE Photonics J. 4 (2012) 1762.

Zaťko, B., Dubecký, F., : Performance of a Schottky surface barrier radiation detector based on bulk undoped semi-insulating GaAs at reduced temperature. IEEE Trans. Nuclear Sci 53 (2006) 625-629.

      1. Sagatova-Perd’ochova, A.: Nuclear Instr. Methods Phys. Res. A 591 (2008) 98.

Dubecký, F., Hulicius, E., Frigeri, P., Šagátová-Perďochová, A., Zaťko, B., Hubík, P., Gombia, E., Boháček, P., Pangrác, J., Franchi, S., Nečas, V., : Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode. Nuclear Instr. and Methods in Phys. Res. A 563 (2006) 159-162.

      1. Manifacier, J.C.: Solid-State Electr. 54 (2010) 1511.
*    2. Avenel-Le Guerroue, M.L.: PhD Thesis. Grenoble: CEA – LETI – Direction de la Recherche Technologique 2012.

Dubecký, F., Šagátová-Perďochová, A., Ščepko, P., Zaťko, B., Sekerka, V., Nečas, V., Sekáčová, M., Hudec, M., Boháček, P., and Huran, J.: Digital X-ray portable scanner based on monolithic semi-insulating GaAs detectors: General description and first “quantum” images, Nuclear Instr. and Methods in Phys. Res. A 546 (2005) 118-124.

1. Iacobaeus, C.: IEEE Trans. Nuclear Sci 53 (2006) 554.
2. Zentai, G.: Proc. 2007 IEEE Inter. Workshop on Imaging Systems Techniques art. no. 4258788.
3. Jackson, J.B.: Measurement Sci Technol. 20 (2009) 075502.
*     4. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.
#     5. Prokopyev, D.G.: Proc. IFOST 2012 (2012) art. no. 6357750.
6. Veale, M. C.: Nuclear Instrum. Methods in Phys. Res. A 752 (2014) 6.
7. Turkington, G.: Nuclear Instr. Methods in Phys. Res. A 911 (2018) 55.

Zaťko, B., Dubecký, F., Ščepko, P., Melov, V., Herms, M., Haupt, L., : Performance study of monolithic line radiation detector based on semi-insulating GaAs using X-ray source. Nuclear Instr. and Methods in Phys. Res. A 551 (2005) 78-82.

      1. Paszkowicz, W.: Nuclear Instr. Methods Phys. Res. A 551 (2005) 162.
2. Sagatova-Perd’ochova, A.: Nuclear Instr. Methods Phys. Res. A 591 (2008) 98.
*     3. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.

Dubecký, F., Ščepko, P., Loukas, D., Zaťko, B., Sekerka, V., Nečas, V., Šagátová-Perďochová, A., Sekáčová, M., Boháček, P., Hudec, M., Huran, J., : Application of monolithic strip line radiation detector based on semi-insulating GaAs in X-ray portable scanner. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 314-320.

      1. Pino, R.: J. Crystal Growth 290 (2006) 29.
2. Zwerger, A.: Nuclear Instr. Methods A 576 (2007) 23.
*     3. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.

Dubecký, F., Boháček, P., Zaťko, B., Sekáčová, M., Huran, J., Šmatko, V., Fornari, R., Gombia, E., Mosca, R., Pelfer, P., : Role of electrode technology in radiation detector based on semi-insulating InP in development of detector array. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 181-191.

     1. Zavadil, J.: J Optoelectr. Advanced Mater. 9 (2007) 1221.
2. Kim, H.: J. Electrochem. Sci Technol. 9 (2018) 78.

Boháček, P., Korytár, D., Ferrari, C., Dubecký, F., Surma, B., Zaťko, B., Šmatko, V., Huran, J., Fornari, R., Sekáčová, M., Strzelecka, S., : Correlation of crystal defects and galvanomagnetic parameters of semi-insulating InP with performance of radiation detectors fabricated from characterised materials. Materials Sci Engn. B 91-92 (2002) 516-520.

*    1. Pelfer, P.G: SIMC-XII-2002. Piscataway: IEEE 2002. P. 273.
2. Gorodynskyy, V.: Nuclear Instr. Methods A 555 (2005) 288.
*    3. Perďochová, A.: PhD. Thesis. Bratislava: FEI STU 2005.
4. Zdansky, K.: IEEE Trans. Nuclear Sci 56 (2009) 2997.

Dubecký, F., Zaťko, B., Nečas, V., Sekáčová, M., Fornari, R., Gombia, E., Boháček, P., Krempasky, M., and Pelfer, P.: Recent improvements in detection performances of radiation detectors based on bulk semi-insulating InP, Nuclear Instrum. Methods in Phys. Research A 487 (2002) 27-32.

1. Gorodynskyy, V.: Nuclear Instr. Methods A 555 (2005) 288.
#     2.   Procházková, O.: J. Crystal Growth 275 (2005)  e959.
3. Pino, R.: J. Crystal Growth 290 (2006) 29.
4. Celik, A.: X-Ray Spectrometry 37 (2008) 490.
5. Yatskiv, R.: Nuclear Instr. Methods A 598 (2009) 759.
6. Zdansky, K.: IEEE Trans. Nuclear Sci 56 (2009) 2997.
7. Owens, A.: Compound Semicond. Radiation Detectors. CRC Press-Taylor 2012 ISBN:978-1-4398-7313-7. P. 287-368.
8. Mouleeswaran, D.: J. Crystal Growth 362 (2013) 238.
9. Lioliou, G.: J. Applied Phys. 124 (2018) 195704.

Dubecký, F., Darmo, J., Krempasky, M., Sekáčová, M., Zaťko, B., Nečas, V., Pelfer, P., Senderák, R., Somora, M., Haralabidis, N., Loukas, D., Misiakos, K., Hlaváč, S., Kolesár, F., Boháček, P., Ruček, M., : On technology and performance of SAMO:: X- and γ-ray 32-pixel line detector based on semi-insulating GaAs and InP. Nuclear Instr. & Methods in Phys. Res. A 458 (2001) 152-157.

      1. Šatka, D.: Materials Sci & Engn. B 91-92 (2002) 239.
*    2. Perďochová, A.: PhD. Thesis. Bratislava: FEI STU 2005.

Darmo, J., Dubecký, F., Zaťko, B., Boháček, P., Sekáčová, M., Kvitkovič, J., Nečas, V., Pelfer, P., : The semi-insulating GaAs-based particle detector at IEE SAS: first imaging results. Nuclear Instr. & Methods in Phys. Res. A 458 (2001) 418-421.

      1. Mikulec, B.: Nuclear Instr. & Methods A 510 (2003) 1.
*     2. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.

Zaťko, B., Dubecký, F., Darmo, J., Euthymiou, P., Nečas, V., Krempasky, M., Sekáčová, M., Korytár, D., Csabay, O., Harmatha, L., Pelfer, P., : Electrical and detection performance of radiation detector based on bulk semi-insulating InP: Role of detector volume. In: ASDAM 2000. Eds. J.Osvald et al. Piscataway: IEEE 2000. ISBN 0-7803-5939-9. P. 429-432.

       1. Zdansky, K.: Semicond. Sci Technol. 16 (2001) 1002.

Pelfer, P.G., Dubecký, F., Fornari, R., Pikna, M., Gombia, E., Zaťko, B., Darmo, J., Krempaský, M., and Sekáčová, M.: Semi-insulating InP detectors for solar neutrino experiment. In: ASDAM 2000 : 3rd Int. EuroConf. on Advanced Semiconductor Devices and Microsystems. Piscataway, IEEE 2000. P. 99-104.

1. Lioliou, G.: J. Applied Phys. 124 (2018) 195704.

Dubecký, F., Darmo, J., Krempasky, M., Sekáčová, M., Zaťko, B., Boháček, P., Bešše, I., Ruček, M., Nečas, V., Pelfer, P., Senderák, R., Pinčík, E., Somora, M., Kolesár, F., Hudek, P., Kostič, I., : Technology and performance of x-and γ-ray 32 pixel line detector based on semi-insulating GaAs, J. Electrical Engn. 51 (2000) 30-35.

     1. Kordyasz, A.J.: Nuclear Instr. Methods A 545 (2005) 716.

Dubecký, F., Darmo, J., Zaťko, B., Fornari, R., Nečas, V., Krempasky, M., Pelfer, P., Sekáčová, M., Boháček, P., : X-ray and gamma-ray detectors based on bulk semi-insulating GaAs&InP: Present status and prospects. In: SIMC-XI. Eds. C.Jagadish and N.J. Welham. Piscataway: IEEE 2000. P. 151-158.

     1. Causley, R.L.: Physica B 302 (2001) 327.