RNDr. Boháček Pavol, CSc.

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Kováčová, E., Halahovets, Y., Rozov, S.V., and Sandukovskij, V.G.: Study of Schottky barrier detectors based on high quality 4H-SiC epitaxial layer with different thickness, Applied Surface Sci 536 (2021) 147801.

1. Ozdemir, A.F.: Physica B 616 (2021) 413125.
2. Gullu, H.H.: J. Electron. Mater. 50 (2021) 7044.
3. Wang, X.: J. Semicond. 42 (2021) 112802.
4. Kacha, A.H.: Semiconductors 55 (2021) S54.
5. Gao, R.: Sensors Actuators A 333 (2022) 113241.
6. Li, X.X.: J. Mater. Res. Technol.-JMR&T 18 (2022) 2152.
7. Capan, I.: Electronics 11 (2022) 532.
8. Napoli, M.D.: Front. Phys. 10 (2022) 898833.
9. Bernat, R.: Materials 16 (2023) 2202.
10. Huang, Z.: J. Mater. Sci-Mater. Electron. 34 (2023) 1046.
11. Mandal, K.C.: IEEE Trans. Nuclear Sci 70 (2023) 823.
12. Capan, I.: Diamond Relat. Mater. 137 (2023) 110072.
13. Long, Z.: Nuclear Instr. Methods in Phys. Res. A 1056 (2023) 168585.
14. Capan, I.: Materials 17 (2024) 1147.

Hrubčín, L., Gurov, J.B., Zaťko, B., Boháček, P., Rozov, S.V., Rozov, I.E., Sandukovskij, V.G., a Skuratov, V.A.: The amplitude defect of SiC detectors during the recording of accelerated Xe ions, Yadernaya Fizika i Inzhiniring 10 (2019) no. 3, Phys. Atomic Nuclei 82 (2019) 1682-1685.

1. Gao, R.L.: IEEE Trans. Nuclear Sci 68 (2021) 1169.
2. Zhang, X.P.: J. Instrument. 18 (2023) P09038.

Kubanda, D., Zaťko, B., Šagátová, A., Žemlička, J., Zápražný, Z., Boháček, P., Dudák, J., Kováčová, E., and Nečas, V.: Performance of bulk semi-insulating GaAs-based sensor and its comparison to Si-based sensor for Timepix radiation camera, J. Instrument. 14 (2019) C01023.

#     1. Xu, J.: Rengong Jingti Xuebao/J. Synthetic Crystals 48 (2019) 975.

Zaťko, B., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Kováčová, E., and Nečas, V.: Neutron detection using epitaxial 4H-SiC detector structures. In: ASDAM 2018. IEEE 2018. ISBN 978-1-5386-7488-8. P. 41-44.

1. Slavicek, T.: J. Instrument. 15 (2020) C01036.

Šagátová, A., Zaťko, B., Nečas, V., Dubecký, F., Tu, L.A., Sedlačková, K., Boháček, P., and Zápražný, Z.: From single GaAs detector to sensor for radiation imaging camera, Applied Surface Sci 461 (2018) 3-9.

1. Xu, L.: Materials 12 (2019) 1192.
2. Turkington, G.: J. Instrument. 14 (2019) P10018.
#     3. Xu, J.: Rengong Jingti Xuebao/J. Synthetic Crystals 48 (2019) 975.
4. Chen, J.: Precision Engn.-J. Inter. Soc for Precision Engn. Nanotechnol. 62 (2020) 71.
5. Turkington, G.: Inter. Nuclear Phys. Conf. – INPC2019 (2020) 1643.
6. Leyva-Fabelo, A.: Revista Cubana De Fisica 38 (2021) 4.
7. Zhang, H.L.: Crystal Res. Technol. 57 (2022) 2100247.
8. Karthieka, R.R.: Electron. Mater. Lett. 18 (2022) 304.
9. Zhu, Z.F.: Nuclear Sci Techniq. 33 (2022) 85.
10. Sun, X.: Acta Phys. Sinica 71 (2022) 178102.

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Zápražný, Z., Sedlačková, K., Sekáčová, M., Dubecký, F., Skuratov, V.A., Korytár, D., and Nečas, V.: Schottky barrier detectors based on high quality 4H-SIC semiconductor: electrical and detection properties, Applied Surface Sci 461 (2018) 276-280.

1. Zhou, Y.: Carbon 148 (2019) 387.
2. Dong, P.: IEEE Access 7 (2019) 170385.
3. Sarac, Y.: J. Alloys Comp. 824 (2020) 153899.
4. Xie, X.-M.: Trans. Nonferr. Metals Soc China‏ 30 (2020)‏ 3058.
5. Jiang, L.: Nuclear Instr. Methods in Phys. Res. A 1048 (2023) 167917.

Sedlačková, K., Zaťko, B., Šagátová, A., Nečas, V., Boháček, P., and Sekáčová, M.: Comparison of semi-insulating GaAs and 4H-SiC-based semiconductor detector covered by LiF film for thermal neutron detection, Applied Surface Sci 461 (2018) 242-248.

1. Monk, S.D.: IEEE Nuclear Sci Symp. Medical Imag. Conf. (NSS/MIC), 2019, pp. 1.
2. Peng, J.: Nuclear Instr. Methods in Phys. Res. A 969 (2020) 164017.
3. Bernat, R.: Materials 14 (2021) no. 17.
4. Zhang, L.: IEEE Sensors J. 21 (2021) 20145.
5. Zhang, L.L.: IEEE Sensors J. 22 (2022) 10620.
6. Zhu, Z.F.: Nuclear Sci Techniq. 33 (2022) 85.
7. Capan, I.: Electronics 11 (2022) 532.

Zaťko, B., Zápražný, Z., Jakůbek, J., Šagátová, A., Boháček, P., Sekáčová, M Korytár, D., Nečas, V., Žemlička, J., Mora, Y., and Pichotka, M.: Imaging performance of Timepix d etector based on semi-insulating GaAs, J. Instrument. 13 (2018) C01034.

1. Veale, M. C.: J. Phys. D 52 (2019) 085106.
2. Curtis, T.E.: J. Medical Imaging 6 (2019) 013501.

Dubecký, F., Kindl, D., Hubík, P., Mičušík, M., Dubecký, M., Boháček, P., Vanko, G., Gombia, E., Nečas, V., and Mudroň, J.: A comparative study of Mg and Pt contacts on semi-insulating GaAs: electrical and XPS characterization, Applied Surface Sci 395 (2017) 131-135.

1. Xiong, T.: Applied Surface Sci A427 (2018) 1107.
2. Zhou, Y.: Metals 9 (2019) 311.
3. Niu, Q.: Dalton Trans. 49 (2020) 11120.
4. Zhou, L.: J. Water Process Engn. 36 (2020) 101168.
5. Bendahmane, B.: Sensors 20 (2020) 2158.
6. Li, R.: Energy Storage Mater. 29 (2020) 223.
7. Aldawsari, A.M.: J. Alloys Comp. 857 (2021) 157551.
8. Yu, X.: Catalysts 11 (2021) 232.
9. Zhang, S.S.: ACS Omega 6 (2021) 25506.
10. Guo, S.: Vacuum 197 (2022) 110792.
11. Predoi, D.: Coatings 12 (2022) 702.
12. Hwang, Y.Y.: Energy Storage Mater. 51 (2022) 108.
13. Afzal, S.: Applied Surface Sci 600 (2022) 154026.
14. Ye, Y.S.: J. Mater. Chem. A 11 (2023) 9112.
15. Yang, Y.X.: IEEE Trans. Electron Dev. 70 (2023) 4604.

Dubecký, F., Osvald, J., Kindl, D., Hubík, P., Dubecký, M., Gombia, E., Šagátová, A., Boháček, P., Sekáčová, M., and Nečas, V.: Photocurrent spectra of semi-insulating GaAs M-S-M diodes: role of the contacts, Solid-State Electr. 118 (2016) 30-35.

#       1. Abdulkhaev, O.: Inter. Conf. Inf. Sci Comm. Techn. –  ICISCT 2020, art. no. 9351463.

Zaťko, B., Šagátová, A., Boháček, P., Sedláčková, K., Sekáčová, M., Arbet, J., and Nečas, V.: The influence of high-energy electrons irradiation on the electrical properties of Schottky barrier detectors based on semi-insulating GaAs, J. Instrument. 11 (2016) C01076.

1. Chia, J.Y.: Applied Phys. Express 15 (2022) 107002.

Zaťko, B., Šagátová, A., Sedláčková, K., Boháček, P., Sekáčová, M., Kohout, Z., Granja, C., and Nečas, V.: Radiation detector based on 4H-SiC used for thermal neutron detection, J. Instrument. 11 (2016) C11022.

#    1. Anderson, P.: Proc. Inter. Workshop on Future Linear Colliders – LCWS 2016.
2. Liu, L.: Sensors Actuators A 280 (2018) 245.
3. Pavlovic, M.: AIP Conf. Proc. 1996 (2018) 020037.
4. Zhuraev, K.N.: J. Engn. Phys. Thermophys.‏ 93 (2020) 1036.
5. Hong, B.: IEEE Trans. Nuclear Sci 69 (2022) 639.
6. Zhang, L.: IEEE Trans. Nuclear Sci 69 (2022) 2103.
7. Holiatkina, M.: J. Applied Phys. 134 (2023) 145702.

Sasinková, V., Huran,  J., Kleinová, A., Boháček, P., Arbet, J., and Sekáčová, M.: Raman spectroscopy study of SiC thin films prepared by PECVD for solar cell working in hard environment, Proc. SPIE 9563 (2015) 95630V.

1. de Obaldia, E.I.:Applied Sci-Basel 11 (2021) 3990.

Huran,  J., Hrubčín, L., Boháček, P., Borzakov, S.B., Skuratov, V.A., Kobzev, A.P., Kleinová, A., and Sasinková, V.: The effect of xe ion and neutron irradiation on the properties of SiC and SiC(N) film prepared by PECVD technology. In: RAD Proc. Ed. G. Ristič. Niš: RAD Ass. 2015. ISBN: 978-86-80300-01-6. P. 399-403.

1. Su, Q.: Acta Materialia 165 (2019) 587.

Šagátová, A., Zaťko, B., Sedlačková, K., Pavlovič, M., Fulop, M., Boháček, P., and Nečas, V.: GaAs detectors irradiated by electrons at different dose rates, J. Instrument. 9 (2014) C12050.

1. Ozden, S.: Inter. J. Surface Sci Engn. 13 (2019) 79.
2. Peng, J.: Nuclear Instr. Methods in Phys. Res. A 969 (2020) 164017.

Huran, J., Boháček, P., Shvetsov, V., Kobzev, A., Kleinová, A., Sasinková, V., Balalykin, N., Sekáčová, M., and Arbet, J. : Amorphous silicon carbide thin films deposited by plasma enhanced chemical vapor deposition at different temperature for hard environment applications. In: 21st Inter. Symp. Plasma Chemistry. Cairns (Australia) 2013. Výveska.

 1. Marvi, Z.: RSC Adv. 7 (2017) 19189.
2. van Laar, J. H.: J. Europ. Ceramic Soc 38 (2018) 1197.
3. Lukianov, A.N.: J. Alloys Compounds 801 (2019) 285.

Zaťko, B., Sedlačková, K., Dubecký,  F., Šagátová, A., Boháček, P., and Nečas, V.: Semiconductor detector based on 4H-SiC and analysis of its active region thickness, J. Instrument. 9 (2014) C05041.

1. Raja, P. V.: J. Instrument. 12 (2017) P08006.

Huran, J., Boháček, P., Shvetsov, V., Kobzev, A., Kleinová, A., Borzakov, S., Hrubčín, L., Sekáčová, M., and Balalykin, N.: Neutron-irradation effect on the electrical chracteristics of amorphous silicon carbide and nitrogen-doped silicon carbide films prepared by PECVD technology, Phys. Status Solidi a 210 (2013) 2756-2761.

  1. Mutch, M.J.: Microelectron. Reliab. 63 (2016) 201.
2. Wei, J.: Ceramics Inter. 44 (2018) 20375.|
3. Su, Q.: Acta Materialia 165 (2019) 587.
#   4. Zhang, X.: In 4th ICREED 2021.

Šagátová, A., Zaťko, B., Sedlačková, K., Nečas, V., Dubecký, F., Boháček, P., and Chodák, I.: Semi-insulating GaAs detectors optimized for fast neutron detection, J. Instrument. 8 (2013) C03016.

 1. Chernykh, A.V.: J. Instrument. 10 (2016) C01021.
2. Chernykh, A.V.: J. Instrument. 11 (2016) C12005.
3. Pavlovic, M.: AIP Conf. Proc. 1996 (2018) 020037.
4. Chernykh, S.V.: Instrum. Experiment. Techniq. 62 (2019) 312.
5. Zhu, Z.: Chinese Phys. B 29 (2020) 090401.

Huran, J., Valovič, A., Boháček, P., Shvetsov, V., Kobzev, A., Borzakov, S., Kleinová, A., Sekáčová, M., Arbet, J., and Sasinková, V.: The effect of neutron irradiation on the properties of SiC and SiC(N) layer prepared by plasma enhanced chemical vapor deposition, Applied Surface Sci 267 (2013) 88-91.

1. El Khalfi, A.: Spectroscopy Lett. 47 (2014) SI392.
2. Wang, B.: Nanoscale 7 (2015) 14489.
3. Wang, R.: Plasma Process. Polym. 14 (2017) e1600248.
#     4. Baskar, S.: Inter. J. Mechan. Engn. Technol. 8 (2017) 250.
5. Baskar, S.: J. Surface Sci Technol. 34 (2018) 116.
6. Yoshimura, S.: Nuclear Instr. Methods in Phys. Res. B 430 (2018) 1.
7. Su, Q.: Acta Materialia 165 (2019) 587.
8. Baskar, S.: Adv. Mater. Process. Technol. 5 (2019) 438.
9. Baskar, S.: J. Surface Sci Technol. 35 (2019) 107.
#  10. Baskar, S.: Inter. J. Engn. Adv. Technol. 8 (2019) 787.
11. Mirzayev, M.N.: Physica B 611 (2021) 412842.
12. Yoshimura, S.: PLOS One 16 (2021) 0259216.

Zaťko, B., Dubecký, F., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Nečas, V., : Detector of fast neutrons based on silicon carbide epitaxial layers. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 151-154.

       1. Liu, L.Y.: Diamond Related Mater. 73 (2017) 177.
#     2. Ouyang, X.: Yuanzineng Kexue Jishu/Atomic Energy Sci Technol. 53 (2019) 1999.
#     3. Liu, L.: Yuanzineng Kexue Jishu/Atomic Energy Sci Technol. 56 (2022) 1987.

Huran, J., Valovič, A., Kučera, M., Kleinová, A., Kováčová, E., Boháček, P., and Sekáčová, M.: Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: properties, J. Electr. Engn. 65 (2012) 333-335.

1. Gangopadhyay, U.: J. Renewable Sustainable Energy 5 (2013) 031607.
2. Ivashchenko, V.I.: Thin Solid Films 569 (2014) 57.
#   3. Kozak, A.O.: J. Nano- and Electron. Phys. 6 (2014) 04047.
4. Fainer, N. I.: J. Struct. Chem. 56 (2015) 163.
5. Fainer, N. I.: ECS J. Solid State Sci Technol. 4 (2015) SIN3153.
6. Haacke, M.: Europ. Phys. J.-Special Top. 224 (2015) 1935.
7. Porada, O. K.: J. Superhard Mater. 38 (2016) 263.
8. Khatami, Z.: Thin Solid Films 622 (2017) 1.
9. Fainer, N. I.: J. Struct. Chem. 58 (2017) 119.
10. Porada, O. K.: J. Nano- Electron. Phys. 9 (2017) 02022.
11. Fainer, N.I.: Glass Phys. Chem. 43 (2017) 410.
12. He, W.: J. Ceramic Soc Japan 126 (2018) 253.
13. Khatami, Z.: J. Luminesc.196 (2018) 504.
14. Khatami, Z.: ECS J. Solid State Sci Technol. 7 (2018) N7.
15. Fainer, N.I.: Glass Phys. Chem. 44 (2018) 607.
16. Porada, O. K.: J. Superhard Mater. 41 (2019) 32.
17. Sukach, A.V.: J. Non-Crystall. Solids 523 (2019) UNSP 119603.
18. Fainer, N.I.: J. Struct. Chem.‏ 61 (2020) 1865.
19. Ivashchenko, V.I.: Inter. J. Hydrogen Energy 47 (2022) 7263.
20. Sukach, A.V.:Mater. Sci Semicond. Process. 143(2022) 106515.

Huran, J., Balalykin, N., Shirkov, G., Boháček, P., Kobzev, A., Valovič, A., Malinovsky, L., Sekáčová, M., :Characterization of nanocrystalline diamond/amorphous composite carbon films prepared by PECVD technology. Phys. Procedia 32 (2012) 875-879.

         1. Zhang, X.: J. Applied Phys. 115 (2014) 063508.

Zaťko, B., Sedlačková, K., Dubecký, F., Boháček, P., Sekáčová, M., and Nečas, V.: Detection of fast neutrons using detectors based on semi-insulating GaAs. J. Instrument. 6 (2011) C12047.

1. Chernykh, A.V.: J. Instrument. 10 (2016) C01021.
2. Chernykh, A.V.: J. Instrument. 11 (2016) C12005.
3. Hodgson, M.: Measurement Scie Technol. 28 (2017) 105501.
4. Chernykh, S.V.: Instrum. Experimen. Techniq. 62 (2019) 312.
5. Ozden, S.: Inter. J. Surface Sci Engn. 13 (2019) 79.

Zaťko, B., Dubecký, F., Boháček, P., Huran, J., Nečas, V., and Ryc, L.: Development and evaluation of semi-insulating GaAs detectors in hot plasmas diagnostics, Nuclear Instr. Methods Phys. Res. A 633 (2011) S131-S133.

1. Chernykh, S.V.: Instrum. Experimen. Techniq. 61 (2018) 665.
2. Gao, R.L.: Sci China-Phys. Mechan. Astron. 62 (2019) 122012.

Huran, J., Zaťko, B., Boháček, P., Shvetsov, V., Kobzev, A., : Study of wide band gap nanocrystalline silicon carbide films for radiation imaging detectors. Nuclear Instr. Methods Phys. Res. A 633 (2011) S75-S77.

 1. Jha, H.S.: J. Mater. Sci-Mater. Electron. 26 (2015) 1381.
#        2. Wan, M.:  Zhenkong Kexue yu Jishu Xuebao/J. Vacuum Sci Technol. 35 (2015) 424.
3. Ermakova, E.: J. Organometall. Chem. 958 (2022) 122183.

Dubecký, F., Zaťko, B., Hubík, P., Gombia, E., Boháček, P., Huran, J., : A new kind of quasi-ohmic metallization in semi-insulating GaAs: Study of electrical characteristics. Nuclear Instr. and Methods in Phys. Res. A 607 (2009) 132-134.

  1. Leau W.: Applied Surface Sci 257 (2011) 7286.

Zaťko, B., Dubecký, F., Přibil, J., Boháček, P., Frollo, I., Ščepko, P., Mudroň, J., Grybos, P., Nečas, V., : On the development of portable X-ray CT mini-system using semi-insulating GaAs radiation imaging detectors. Nuclear Instrum. Methods in Phys. Res. A 607 (2009) 67-70.

     1. Mouleeswaran, D.: J. Crystal Growth 362 (2013) 238.

Boháček, P., Huran, J., Kobzev, A., Balalykin, N., Petzold, J., : PECVD silicon carbon nitrid thin films: properties. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 291-294.

      1. Liu, X.: Ceramics Inter. 39 (2013) 3971.
2. Liu, X.: Ceramics Inter. 40 (2014) 5097.
3. Liu, Y.: Ceramics Inter. A 40 (2014) 15831.

Dubecký, F., Hulicius, E., Frigeri, P., Šagátová-Perďochová, A., Zaťko, B., Hubík, P., Gombia, E., Boháček, P., Pangrác, J., Franchi, S., Nečas, V., : Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode. Nuclear Instr. and Methods in Phys. Res. A 563 (2006) 159-162.

      1. Manifacier, J.C.: Solid-State Electr. 54 (2010) 1511.
*    2. Avenel-Le Guerroue, M.L.: PhD Thesis. Grenoble: CEA – LETI – Direction de la Recherche Technologique 2012.

Dubecký, F., Šagátová-Perďochová, A., Ščepko, P., Zaťko, B., Sekerka, V., Nečas, V., Sekáčová, M., Hudec, M., Boháček, P., and Huran, J.: Digital X-ray portable scanner based on monolithic semi-insulating GaAs detectors: General description and first “quantum” images, Nuclear Instr. and Methods in Phys. Res. A 546 (2005) 118-124.

1. Iacobaeus, C.: IEEE Trans. Nuclear Sci 53 (2006) 554.
2. Zentai, G.: Proc. 2007 IEEE Inter. Workshop on Imaging Systems Techniques art. no. 4258788.
3. Jackson, J.B.: Measurement Sci Technol. 20 (2009) 075502.
*     4. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.
#     5. Prokopyev, D.G.: Proc. IFOST 2012 (2012) art. no. 6357750.
6. Veale, M. C.: Nuclear Instrum. Methods in Phys. Res. A 752 (2014) 6.
7. Turkington, G.: Nuclear Instr. Methods in Phys. Res. A 911 (2018) 55.

Dubecký, F., Ščepko, P., Loukas, D., Zaťko, B., Sekerka, V., Nečas, V., Šagátová-Perďochová, A., Sekáčová, M., Boháček, P., Hudec, M., Huran, J., : Application of monolithic strip line radiation detector based on semi-insulating GaAs in X-ray portable scanner. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 314-320.

      1. Pino, R.: J. Crystal Growth 290 (2006) 29.
2. Zwerger, A.: Nuclear Instr. Methods A 576 (2007) 23.
*     3. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.

Šagátová-Perďochová, A., Nečas, V., Ly Anh, T., Dubecký, F., Boháček, P., Sekáčová, M., Pavlicová, V., :Influence of top contact topology on detection properties of semi-insulating GaAs detectors. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 103-110.

*     1. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.

Dubecký, F., Boháček, P., Zaťko, B., Sekáčová, M., Huran, J., Šmatko, V., Fornari, R., Gombia, E., Mosca, R., Pelfer, P., : Role of electrode technology in radiation detector based on semi-insulating InP in development of detector array. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 181-191.

     1. Zavadil, J.: J Optoelectr. Advanced Mater. 9 (2007) 1221.
2. Kim, H.: J. Electrochem. Sci Technol. 9 (2018) 78.

Boháček, P., Korytár, D., Ferrari, C., Dubecký, F., Surma, B., Zaťko, B., Šmatko, V., Huran, J., Fornari, R., Sekáčová, M., Strzelecka, S., : Correlation of crystal defects and galvanomagnetic parameters of semi-insulating InP with performance of radiation detectors fabricated from characterised materials. Materials Sci Engn. B 91-92 (2002) 516-520.

*    1. Pelfer, P.G: SIMC-XII-2002. Piscataway: IEEE 2002. P. 273.
2. Gorodynskyy, V.: Nuclear Instr. Methods A 555 (2005) 288.
*    3. Perďochová, A.: PhD. Thesis. Bratislava: FEI STU 2005.
4. Zdansky, K.: IEEE Trans. Nuclear Sci 56 (2009) 2997.

Morvic, M., Boháček, P., Betko, J., Dubecký, F., Huran, J., Sekáčová, M., : Electrical properties of semi-insulating GaAs irradiated with neutrons. Nuclear Instr. Methods in Phys. Res. B 197 (2002) 240-246.

1. Ladziansky, M.: In: ASDAM 2008. Piscataway: IEEE 2008. P. 179.
2. Sagatova-Perd’ochova, A.: Nuclear Instr. Methods Phys. Res. A 591 (2008) 98.
3. Bialous, M.: Applied Physics B 96 (2009) 471.
*     4. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.
5. Sedlackova, K.: Nuclear Instrum. Methods Phys. Res. A 709 (2013) 63.
6. Aldemir, D.A.: Silicon 11 (2019) 2647.

Dubecký, F., Zaťko, B., Nečas, V., Sekáčová, M., Fornari, R., Gombia, E., Boháček, P., Krempasky, M., and Pelfer, P.: Recent improvements in detection performances of radiation detectors based on bulk semi-insulating InP, Nuclear Instrum. Methods in Phys. Research A 487 (2002) 27-32.

1. Gorodynskyy, V.: Nuclear Instr. Methods A 555 (2005) 288.
#     2.   Procházková, O.: J. Crystal Growth 275 (2005)  e959.
3. Pino, R.: J. Crystal Growth 290 (2006) 29.
4. Celik, A.: X-Ray Spectrometry 37 (2008) 490.
5. Yatskiv, R.: Nuclear Instr. Methods A 598 (2009) 759.
6. Zdansky, K.: IEEE Trans. Nuclear Sci 56 (2009) 2997.
7. Owens, A.: Compound Semicond. Radiation Detectors. CRC Press-Taylor 2012 ISBN:978-1-4398-7313-7. P. 287-368.
8. Mouleeswaran, D.: J. Crystal Growth 362 (2013) 238.
9. Lioliou, G.: J. Applied Phys. 124 (2018) 195704.

Dubecký, F., Darmo, J., Krempasky, M., Sekáčová, M., Zaťko, B., Nečas, V., Pelfer, P., Senderák, R., Somora, M., Haralabidis, N., Loukas, D., Misiakos, K., Hlaváč, S., Kolesár, F., Boháček, P., Ruček, M., : On technology and performance of SAMO:: X- and γ-ray 32-pixel line detector based on semi-insulating GaAs and InP. Nuclear Instr. & Methods in Phys. Res. A 458 (2001) 152-157.

      1. Šatka, D.: Materials Sci & Engn. B 91-92 (2002) 239.
*    2. Perďochová, A.: PhD. Thesis. Bratislava: FEI STU 2005.

Darmo, J., Dubecký, F., Zaťko, B., Boháček, P., Sekáčová, M., Kvitkovič, J., Nečas, V., Pelfer, P., : The semi-insulating GaAs-based particle detector at IEE SAS: first imaging results. Nuclear Instr. & Methods in Phys. Res. A 458 (2001) 418-421.

 1. Mikulec, B.: Nuclear Instr. & Methods A 510 (2003) 1.
*     2. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.
3. Rangel-Kuoppa, V.T.: J. Instrum. 16 (2021) P09012.

Korytár, D., Boháček, P., Ferrari, C., : X-ray flat diffractor optics II. Czechoslovak J. Phys. 51 (2001) 35-47.

      1. Hrdy, J.: J. Synchrotron Radiation 8 (2001) 1200.
#    2. Hrdy, J.: Proc. SPIE  4501 (2001) 88.
*    3. Artemiev, N.: Doctoral Thesis. Praha: Inst. Phys. CAS 2002.
*    4. Hrdá, J.: PhD Thesis. Praha 2007.

Dubecký, F., Darmo, J., Krempasky, M., Sekáčová, M., Zaťko, B., Boháček, P., Bešše, I., Ruček, M., Nečas, V., Pelfer, P., Senderák, R., Pinčík, E., Somora, M., Kolesár, F., Hudek, P., Kostič, I., : Technology and performance of x-and γ-ray 32 pixel line detector based on semi-insulating GaAs, J. Electrical Engn. 51 (2000) 30-35.

     1. Kordyasz, A.J.: Nuclear Instr. Methods A 545 (2005) 716.

Dubecký, F., Darmo, J., Zaťko, B., Fornari, R., Nečas, V., Krempasky, M., Pelfer, P., Sekáčová, M., Boháček, P., : X-ray and gamma-ray detectors based on bulk semi-insulating GaAs&InP: Present status and prospects. In: SIMC-XI. Eds. C.Jagadish and N.J. Welham. Piscataway: IEEE 2000. P. 151-158.

     1. Causley, R.L.: Physica B 302 (2001) 327.

Korytár, D., Boháček, P., Ferrari, C., : X-ray flat diffractor optics I. Czechoslovak J. Phys. 50 (2000) 841-849.

     1. Hrdy, J.: J. Synchrotron Radiation 8 (2001) 1200.
2. Hrdy, J.: Proc. SPIE  4501 (2001) 88.
*    3. Artemiev, N.: Doctoral Thesis. Praha: Inst. of Physics CAS 2002.
*    4. Hrdá, J.: PhD Thesis. Praha 2007.

Dubecký, F., Krempasky, M., Boháček, P., Sekáčová, M., Fornari, R., Gombia, E., Pikna, M., Pelfer, P., : Electrical and detection characteristics of improved particle detectors based on semi-insulating InP. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 269..

     1. Gorodynskyy, V.: Nuclear Instr. Methods A 555 (2005) 288.

Měřínsky, K., Boháček, P., Kordoš, P., Betko, J., : Hĺbkové profily koncentrácií nosičov náboja a Hallových pohyblivostí v implantovaných vrstvách GaAs (Si). Elektrotechn. časopis 33 (1982) 409.

     1. Ďuríček, Ľ.: Cryst. Properties Prepar. 12 (1987) 1.
2. Ďuríček, Ľ.: Cryst. Properties Prepar. 19-20 (1989) 173.