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Mikulics, M., Kordoš, P., Gregušová, D., Gaži, Š., Novák, J., Sofer, Z., Mayer, J., and Hardtdegen, H.: Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer, Semicond. Sci Technol. 36 (2021) 095040.

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Mikulics, M., Kordoš, P., Gregušová, D., Sofer, Z., Winden, A., Trellenkamp, St., Moers, J., Mayer, J., and Hardtdegen, H.: Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement, Applied Phys. Lett. 118 (2021) 043101.

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Asubar, J.T., Yatabe, Z., Gregušová, D., and Hashizume, T.: Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation, J. Applied Phys. 129 (2021) 121102.

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Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., and Kuzmík, J.: Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs, Applied Surface Sci 528 (2020) 146824.

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Gregušová, D., Tóth, L., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Cora, I., Fogarassy, Z., Stoklas, R., Seifertová, A., Blaho, M., Laurenčíková, A., Oyobiki, T., Pécz, B., Hashizume, T., and Kuzmík, J.: InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region, Japan. J. Applied Phys. 58 (2019) SCCCD21.

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Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, Mater. Sci in Semicond Process.  91 (2019) 356-361.

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Chvála, A., Nagy, L., Marek, J., Priesol, J., Donoval, D., Šatka, A., Blaho, M., Gregušová, D., and Kuzmík, J.: Device and circuit models of monolithic InAlN/GaN NAND and NOR logic cells comprising D- and E-mode HEMTs, J. Circuits, Systems Computers 28 (2019) 1940009.

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Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, Mater. Sci in Semicond Process.  91 (2019) 356-361.

1. Nguyen, D.D.: J. Applied Phys. 127 (2020) 094501.

Brytavskyi, I., Hušeková, K., Myndrul, V., Pavlenko, M., Coy, E., Zaleski, K., Gregušová, D., Yate, L., Smyntyna, V., and Iatsunskyi, I.: Effect of porous silicon substrate on structural, mechanical and optical properties of MOCVD and ALD ruthenium oxide nanolayers, Applied Surface Sci 471 (2019) 686-693.

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Blaho, M., Gregušová, D., Haščík, Š., Kuzmík, J., Chvála, A., Marek, J., and Šatka, A.: Technology and performance of E/D-mode InAlN/GaN HEMTs for mixed-signal electronics. In 22nd Inter. Microwave Radar Conf. (MIKON). Poznan: Warsaw Univ. Technol. 2018, p. 440-441. ISBN 978-83-949421-1-3.

#       1. Saglam, B.: IEEE Energy Conv. Congress & Exposition – ECCE 2022, pp. 1-6.

Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, I.V., Ťapajna, M., Fröhlich, K., Haščík, Š., Gregor, M., and Kuzmík, J.: Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition, Applied Surface Sci 461 (2018) 255-259.

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Ťapajna, M., Vincze, A., Noga, P., Dobrovodsky, J., Šagátová, A., Hasenöhrl, S., Gregušová, D., and Kuzmík, J.: Determination of secondary-ions yield in SIMS depth profiling of Si, Mg, and C ions implanted GaN epitaxial layers. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 141-144.

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Chvála, A., Nagy, L., Marek, J., Priesol, J., Donoval, D., Blaho, M., Gregušová, D., Kuzmík, J., and Šatka, A.: Characterization of monolithic InAlN/GaN NAND logic cell supported by circuit and device simulations, IEEE Trans. Electron Devices 65 (2018) 2666-2669.

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Graff, A., Simon-Najasek, M., Altmann, F., Kuzmík, J., Gregušová, D., Haščík, Š., Jung, J., Baur, T., Grunenputt, J., and Blanck, H.: High resolution physical analysis of ohmic contact formation at GaN-HEMT devices, Microelectr. Reliab. 76-77 (2017)  338.

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Gucmann, F., Kúdela, R., Rosová, A., Dobročka, E., Mičušík, M., and Gregušová, D.: Optimization of UV-assisted wet oxidation of GaAs, J. Vacuum Sci Technol. B 35 (2017) 01A116.

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Blaho, M., Gregušová, D.,  Haščík, Š., Ťapajna, M., Fröhlich, K., Šatka, A., and Kuzmík, J.: Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs, Applied Phys. Lett. 111 (2017) 033506.

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Gucmann, F., Gregušová, D., Válik, L., Ťapajna, M., Haščík, Š., Hušeková, K., Fröhlich, K., Pohorelec, O., and Kuzmík, J.: DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric prepared by various techniques. In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 9-12.

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