RNDr. Hušeková Kristína

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, Mater. Sci in Semicond Process.  91 (2019) 356-361.

1. Duong, D.N.: J. Applied Phys. 127 (2020) 094501.

Brytavskyi, I., Hušeková, K., Myndrul, V., Pavlenko, M., Coy, E., Zaleski, K., Gregušová, D., Yate, L., Smyntyna, V., and Iatsunskyi, I.: Effect of porous silicon substrate on structural, mechanical and optical properties of MOCVD and ALD ruthenium oxide nanolayers, Applied Surface Sci 471 (2019) 686-693.

1. Gueye, I.: J. Catal. 380 (2019) 247.
2. Ensafi, A.A.:Electroanal.‏ 32 (2020)  1707.

Gucmann, F., Ťapajna, M., Pohorelec, O., Haščík, Š., Hušeková, K., and Kuzmík, J.: Creation of two-dimesional electron gas and role of surface donors in III-N metal-oxide-semiconductor high-electron mobility transistors, Phys. Status Solidi A  215 (2018) 1800090.

1. Song, K.: J. Phys. D 53 (2020) 345107.
2. Shi, Y.: IEEE Trans. Electron Dev. 67 (2020) 2290.
3. Duong D.N.: J. Applied Phys. 127 (2020) 094501.

Mikolášek, M., Fröhlich, K., Hušeková, K., Racko, J., Rehacek, V., Chymo, F., Ťapajna, M., and Harmatha, L.: Silicon based MIS photoanode for water oxidation: a comparison of RuO2 and Ni Schottky contacts, Applied Surface Sci 461 (2018) 48-53.

1. Quinn, J.: ACS Energy Lett. 4 (2019) 2632.
2. Silva, R.C.: Electron. Mater. Lett. 15 (2019) 645.
3. Hemmerling, J.: Adv. Energy Mater. 10 (2020) 1903354.
4. Li, O.L.: Applied Surface Sci 528 (2020) 146979.
5. Zhao, C.: ACS Applied Energy Mater. 3 (2020)‏ 8216.

Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Toth, L., Pecz, B., Micusik, M., Brunner, F., and Kuzmík, J.: Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties, Applied Surface Sci 426 (2017) 656-661.

1. Huang, H.: J. Phys. D 51(2018) 345102.
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7. Cai, Y.: Japan. J. Applied Phys. 59 (2020) 041001.
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Ťapajna, M., Stoklas, R., Gregušová, D., Válik, L., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Toth, L., Pecz, B., Micusik, M., Brunner, F., Hashizume, T., and Kuzmík, J.: On the origin of surface donors in AlGaN/GaN metal-oxide semiconductor heterostructures with Al2O3 gate dielectric—correlation of electrical, structural, and chemical properties. In: Inter. Workshop on Nitride Semicond. (IWN 2016) Orlando 2016.

1. Akazawa, M.: Phys. Status Solidi B 254 (2017) 1600691.

Gucmann, F., Gregušová, D., Válik, L., Ťapajna, M., Haščík, Š., Hušeková, K., Fröhlich, K., Pohorelec, O., and Kuzmík, J.: DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric prepared by various techniques. In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 9-12.

1. Hasan, Md. R.: J. Vacuum Sci Technol. B 35 (2017) 052202.
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Aarik, L., Arroval, T., Rammula, R., Mändar, H., Sammelselg, V., Hudec, B., Hušeková, K., Fröhlich, K., and Aarik, J.: Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors, Thin Solid Films 565 (2014) 19-24.

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Arroval, T., Aarik, L., Rammula, R., Mändar, H., Aarik, J., Hudec, B., Hušeková, K., and Fröhlich, K.: Influence of growth temperature on the structure and electrical properties of high-permittivity TiO2 films in TiCl4-H2O and TiCl4-O3 atomic-layer-deposition processes, Phys. Status Solidi a 211 (2014) 425-432.

1. Pessoa, R.S.: 29th Symp. Microelectr. Technol. Dev. 2014.
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Murakami, K., Rommel, M., Hudec, B., Rosová, A., Hušeková, K., Dobročka, E., Rammula, R., Kasikov, A., Han, J., Lee, W., Song, S., Paskaleva, A., Bauer, A., Frey, L., Fröhlich, K., Aarik, J., Hwang, C., : Nanoscale characterization of TiO2 films grown by atomic layer deposition on RuO2 electrodes. ACS Applied Mater. Interfaces 6 (2014) 2486-2492.

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Stoklas, R., Gregušová, D., Hušeková, K., Marek, J., and Kordoš, P.: Trapped charge effects in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 and ZrO2 gate insulator, Semicond. Sci Technol. 29 (2014) 045003.

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Aarik, J., Arroval, T., Aarik, L., Rammula, R., Kasikov, A., Mändar, H., Hudec, B., Hušeková, K., Fröhlich, K., :Atomic layer deposition of rutile-phase TiO2 on RuO2 from TiCl4 and O3: Growth of high-permittivity dielectrics with low leakage current. J. Crystal Growth 382 (2013) 61-66.

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Kordoš, P., Stoklas, R., Gregušová, D., Hušeková, K., Carlin, J., Grandjean, N., : Defect states characterization of non-annealed and annealed Zr2/InAlN/GaN structures by capacitance measurements,. Applied Phys. Lett. 102 (2013) 063502.

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Hudec, B., Hušeková, K., Rosová, A., Šoltýs, J., Rammula, R., Kasikov, A., Uustare, T., Mičušík, M., Omastová, M., Aarik, J., and Fröhlich, K.: Impact of plasma treatment on electrical properties of TiO2/RuO2 based DRAM capacitor, J. Phys. D 46 (2013) 385304.

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Gregušová, D., Hušeková, K., Stoklas, R., Blaho, M., Jurkovič, M., Carlin, J., Grandjean, N., and Kordoš, P.:Zr2/InAlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with InAlN barrier of different compositions. Japan. J. Applied Phys. 52 (2013) 08JN07.

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Aarik, J., Hudec, B., Hušeková, K., Rammula, R., Kasikov, A., Arroval, T., Uustare, T., Fröhlich, K., : Atomic layer deposition of high-permittivity TiO2 dielectrics with low leakage current on RuO2 in TiCl4-based processes. Semicond. Sci Technol. 27 (2012) 074007.

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Fröhlich, K., Hudec, B., Ťapajna, M., Hušeková, K., Rosová, A., Eliáš, P., Aarik, J., Rammula, R., Kasikov, A., Arroval, T., Aarik, L., Murakami, K., Rommel, M., and Bauer, A.: TiO2-based metal-insulator-metal structures for future DRAM storage capacitors ECS Transactions 50 (2012) 79-87.

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Hudec, B., Hušeková, K., Dobročka, E., Aarik, J., Rammula, R., Kasikov, A., Tarre, A., Vincze, A., Fröhlich, K., : Atomic layer deposition grown metal-insulator-metal capacitors with RuO2 electrodes and Al-doped rutile TiO2 dielectric layer. J. Vacuum Sci Technol. B 29 (2011) 01AC09.

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Čičo, K., Hušeková, K., Ťapajna, M., Gregušová, D., Stoklas, R., Kuzmík, J., Carlin, J., Grandjean, N., Pogany, D., and Fröhlich, K.: Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics, J. Vacuum Sci Technol. B 29 (2011) 01A808.

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Hudec, B., Hušeková, K., Tarre, A., Han, J., Han, S., Rosová, A., Lee, W., Kasikov, A., Song, S., Aarik, J., Hwang, C., and Fröhlich, K.: Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes. Microelectr. Engn. 88 (2011) 1514-1516.

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Fröhlich, K., Hudec, B., Hušeková, K., Aarik, J., Tarre, A., Kasikov, A., Rammula, R., Vincze, A., : Low equivalent oxide thickness TiO2 based capacitors for DRAM applications, ECS Trans. 41 no. 2 (2011) 73.

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Fröhlich, K., Hudec, B., Aarik, J., Tarre, A., Machajdík, D., Kasikov, A., Hušeková, K., Gaži, Š., : Post-deposition processing and oxygen content of TiO2-based capacitors. Microelectr. Engn. 88 (2011) 1525-1528.

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Paskaleva, A., Ťapajna, M., Dobročka, E., Hušeková, K., Atanassova, E., and Fröhlich, K.: Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks,  Applied Surface Sci 257 (2011) 7876-7880.

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Kováč, P., Hušek, I., Kulich, M., Hušeková, K., Melišek, T., and Dobročka, E.: Effects influencing the grain connectivity in ex-situ MgB2 wires, Physica C 470 (2010) 340-344.

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Ťapajna, M., Paskaleva, A., Atanassova, E., Dobročka, E., Hušeková, K., and Fröhlich, K.: Gate oxide thickness dependence of the leakage current mechanism in Ru/Ta2O5/SiON/Si structures, Semicond. Sci Technol. 25 (2010) 075007.

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Hušeková, K., Dobročka, E., Rosová, A., Šoltýs, J., Šatka, A., Fillot, F., Fröhlich, K., : Growth of RuO2 thin films by liquid injection atomic layer deposition. Thin Solid Films 518 (2010) 4701-4704.

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Hudec, B., Hušeková, K., Dobročka, E., Lalinský, T., Aarik, J., Aidla, A., Fröhlich, K., : High-permittivity metal-insulator-metak capacitors with TiO2 rutile dielectric and RuO2 bottom electrode IOP Conf. Series: Mater. Sci Engn. 8 (2010) 012024.

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Hušeková, K., Hušek, I., Kováč, P., Kulich, M., Dobročka, E., Štrbik, V., : Properties of MgB2 superconductor chemically treated by accetic acid. Physica C 470 (2010) 331-335.

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