RNDr. Kučera Michal, PhD.

Kučera, M., Adikimenakis, A., Dobročka, E., Kúdela, R., Ťapajna, M., Laurenčíková, A., Georgakilas, A., and Kuzmík, J.: Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates, Thin Solid Films 672 (2019) 114-119.

1. Andreev, B.A.: Semiconductors 53 (2019) 1357.
2. Cross, G. B.: J. Crystal Growth 536 (2020) 125574.
3. Wang, S.: Coatings 10 (2020) 1185.

Kuzmík, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M., Kúdela, R., Androulidaki, M., Pogany, D., and Georgakilas, A.: Current conduction mechanism and electrical break-down in InN grown on GaN, Applied Phys. Lett. 110 (2017) 232103.

1. Shen, L.: Applied Surface Sci 476 (2019) 418.

Pinčík, E., Brunner, R., Kobayashi, H., Mikula, M., Kučera, M., Švec, P. Jr., Greguš, J., Vojtek, P., Zábudlá, Z., Imamura, K., and Zahoran, M.: About the optical properties of oxidized black silicon structures, Applied Surface Sci 395 (2017) 185-194.

1. Sardar, M.: Mater. Res. Express (2017) 125902.

Kuzmík, J., Haščík, Š., Kučera, M., Kúdela, M., Dobročka, E., Adikimenakis, A., Mičušík, M., Gregor, M., Plecenik, A., and Georgakilas, A.: Elimination of surface band bending on N-polar InN with thin GaN capping, Applied Phys. Lett. 107 (2015) 191605.

1. Lund, C.: J. Applied Phys. 123 (2018) 055702.
2. Pfusterschmied, G.: Proc. IEEE Micro Electro Mechan. Systems 2019, pp. 735-738.
3. Park, B.-G.: Nanotechnol.‏ 31 (2020) 335503.

Huran, J., Valovič, A., Kobzev, A., Balalykin, N., Kučera, M., Haščík, Š., Malinovsky, L., and Kováčová, E.: Stuctural and physical characteristics of PECVD nanocrystalline silicon carbide thin films. Phys. Procedia 32 (2012) 303-307.

#   1. Wan, M.: Zhenkong Kexue yu Jishu Xuebao/J. Vacuum Sci Technol. 35 (2015) 424.

Huran, J., Valovič, A., Kučera, M., Kleinová, A., Kováčová, E., Boháček, P., and Sekáčová, M.: Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: properties, J. Electr. Engn. 65 (2012) 333-335.

1. Gangopadhyay, U.: J. Renewable Sustainable Energy 5 (2013) 031607.
2. Ivashchenko, V.I.: Thin Solid Films 569 (2014) 57.
#   3. Kozak, A.O.: J. Nano- and Electron. Phys. 6 (2014) 04047.
4. Fainer, N. I.: J. Struct. Chem. 56 (2015) 163.
5. Fainer, N. I.: ECS J. Solid State Sci Technol. 4 (2015) SIN3153.
6. Haacke, M.: Europ. Phys. J.-Special Top. 224 (2015) 1935.
7. Porada, O. K.: J. Superhard Mater. 38 (2016) 263.
8. Khatami, Z.: Thin Solid Films 622 (2017) 1.
9. Fainer, N. I.: J. Struct. Chem. 58 (2017) 119.
10. Porada, O. K.: J. Nano- Electron. Phys. 9 (2017) 02022.
11. Fainer, N.I.: Glass Phys. Chem. 43 (2017) 410.
12. He, W.: J. Ceramic Soc Japan 126 (2018) 253.
13. Khatami, Z.: J. Luminesc.196 (2018) 504.
14. Khatami, Z.: ECS J. Solid State Sci Technol. 7 (2018) N7.
15. Fainer, N.I.: Glass Phys. Chem. 44 (2018) 607.
16. Porada, O. K.: J. Superhard Mater. 41 (2019) 32.
17. Sukach, A.V.: J. Non-Crystall. Solids 523 (2019) UNSP 119603.
18. Fainer, N.I.: J. Struct. Chem.‏ 61 (2020) 1865.

Pinčík, E., Kobayashi, H., Rusnák, J., Takahashi, M., Mikula, M., Kim, W., Kučera, M., Brunner, K., Jurečka, S., : Passivation of Si-based structures in HCN and KCN solutions. Applied Surface Sci 258 (2012) 8397-8405.

1. Angermann, H.: Applied Surface Sci 312 (2014) 3.
2. Gad, K.M.: Applied Surface Sci 353 (2015) 1269.
#    3. Angermann, H.: Solid State Phenomena 219 (2015) 291.
4. Gad, K.M.: IEEE Photovolt Specialists Conf. 2015.

Hasenöhrl, S., Novák, J., Vávra, I., Šoltýs, J., Kučera, M., and Šatka, A.: Epitaxial growth of GaP/InxGa1-xP (xIn ≥ 0,27) virtual substrate for optoelectronic applications, J. Electr. Engn. 62 (2011) 93-98.

1. Shi, B.: J. Applied Phys. 127 (2020) 033102.
2. Turkoglu, A.: Solid State Comm. 334 (2021) 114390.

Valovič, A., Huran, J., Kučera, M., Kobzev, A., Gaži, Š., : Properties study of silicon carbide thin films prepared by electron cyclotron resonance plasma technology. European Phys. J. Applied Phys. 56 (2011) 24013.

       1. Omar, M.F.: IEEE 4th Inter. Conf. Photonics 2013, Art. no. 6687098, Pp 154.

Brunner, K., Pinčík, E., Kobayashi, H., Kučera, M., Takahashi, M., Rusnák, J., : On photoluminescence properties of a-Si:H-based structures. Applied Surface Sci 256 (2010) 5596-5901.

      1. Khomenkova, L.: Physica B 453 (2014) 19.

Pinčík, E., Kobayashi, H., Rusnák, J., Kim, W., Brunner, K., Malinovsky, L., Matsumoto, T., Imamura, K., Jergel, M., Takahashi, M., Higashi, Y., Kučera, M., Mikula, M., : On ultra-thin oxide/Si and very-thin oxide/Si structures prepared by wet chemical process. Applied Surface Sci 256 (2010) 5757-5764.

#   1. Bordihn, S.: Energy Procedia 8 (2011) 654.
#   2. Angermann, H.: Central Europ. J. Phys. 9 (2011) 1472.
3. Angermann, H.: Applied Surface Sci 258 (2012) 8387.
4. Angermann, H.: Applied Surface Sci 312 (2014) 3.

Kúdela, R., Kučera, M., Dobročka, E., Šoltýs, J., : AlGaAs/InGaP interfaces in structures prepared by MOVPE. J. Crystal Growth 311 (2009) 3123-3129.

       1. Farag, A.A.M.: J. Alloys Compounds 509 (2011) 8056.

Pinčík, E., Brunner, K., Kobayashi, H., Takahashi, M., Kučera, M., : Photoluminescence of very thin oxide/a-Si:H structures passivated in HCN solutions. Applied Surface Sci 254 (2008) 3710-3714.

       1. Kayahan, E.: Applied Surface Sci 255 (2008) 2808.

Gregušová, D., Kučera, M., Hasenöhrl, S., Vávra, I., Štrichovanec, P., Martaus, J., Novák, J., : Impact of growth conditions on the spatial non-uniformities of composition in InGaP epitaxial layers. Physica Status Solidi c 4 (2007) 1419-1422.

1. Simon, J.: J. Applied Phys. 109 (2011) 013708.
2. Tomasulo, S.: IEEE J. Photovolt. 2 (2012) 56.

Novák, J., Hasenöhrl, S., Vávra, I., and Kučera, M.Influence of surface strain on the MOVPE growth on InGaP epitaxial layers. Applied Phys. 87 (2007) 511-516.

1. Nakano, T.: J. Crystal Growth 347 (2012) 25.
2. Bittner, Z.: 38th IEEE Photovoltaic Specialists Conf. (2012) 3158.
3. Peng, Y.: Comput. Mater. Sci 123 (2016) 65.
4. Hussain, Z.S.: J. Applied Phys. 119 (2016) 195702.
5. Knijn, P. J.: Phys. Chem. Chem. Phys. 18  (2016) 21296.
6. Gagliano, L.: Nano Lett. 16  (2016) 7930.
7. He, Y.: J. Mater. Sci-Mater. Electron. 30 (2019) 7203.

Pinčík, E., Kobayashi, H., Hajossy, R., Glesková, H., Takahashi, M., Jergel, M., Brunner, K., Ortega, L., Kučera, M., Kráľ, M., Rusnák, J., : On interface properties of ultra-thin and very-thin oxide/a-Si:H stuctures prepared by oxygen based plasmas and chemical oxidation. Applied Surface Sci 253 (2007) 6697-6715.

   1. Hu, Y.C.: Jap. J. Applied Phys. 49 (2010) 022301.

Kučera, M. and Novák, J.: Optical characterization of gallium antimonide highly doped with manganese, J. Phys. Chem. Solids. 67 (2006) 1724-1730.

1. Dakhel, A.A.: Thin Solid Films 517 (2008) 886.
2. Ganesan, K.: Semicond. Sci Technol. 25 (2010) 105003.
3. Poltavtsev, S.V.: Phys. Rev. B 102 (2020) 014204.

Novák, J., Hasenöhrl, S., Vávra, I., Kučera, M., : Spinodal-like decomposition of InGaP epitaxial layers grown on GaP substrates. Applied Surface Sci 252 (2006) 4178-4184.

1. Pastore, C.E.: Applied Surface Sci 256 (2010) 5681.
2. Feldman, E.P.: Phys. Rev. E 89 (2014) 062406.
3. Moskvin, P.P.: J. Phys. Studies ‏ 24 (2020) 1602.

Novák, J., Hasenöhrl, S., Kúdela, R., and Kučera, M.Growth and characterisation of InxGa1-xP layers with composition close to crossover from direct to indirect band gap. J. Crystal Growth 275 (2005) e1281-e1286.

1. Wolos, A.: Spintronics 82 (2008) 325.
2. Kovac, J.: More Than Moore: Creating High Value Micro/Nanoelectr. Systems. Springer 2009. ISBN 0387755926.  P. 203-238.
3. Lankinen, A.: J. Crystal Growth 311 (2009) 4619.
4. Jenichen, A.: Physica Status Solidi B 247 (2010) 59.
5. Nicklas, J.W.: Applied Phys.Lett. 97 (2010) 091902.
6. Norizan, M. N.: IOP Conf. Ser.-Mater. Sci Engn. 209 (2017) 012029.

Pinčík, E., Kobayashi, H., Takahashi, M., Fujiwara, N., Brunner, R., Glesková, H., Jergel, M., Müllerová, J.,  Kučera, M., Falcony, C., Ortega, L., Rusnák, J., Mikula, M., Zahoran, M., Juráni, R., and Král, M.: Photoluminescence, structural and electrical properties of passivated a-Si:H based thin films and corresponding solar cells, Applied Surface Sci 235 (2004) 351-363.

#       1. Mikolášek, M.: Applied Surface Sci 395 (2017) 166.

Novák, J., Hasenöhrl, S., Kučera, M., Šoltýs, J., : Nano-patterning surfaces by the self-organized growth of ordered and strained epitaxial layers. Superlatt. Microstruct. 36 (2004) 123-131.

      1. Zhou, J.: Microelectr. J. 38 (2007) 1207.
2. Kaiju, H.: Applied Surface Sci 255 (2009) 3706.

Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., Alonso, M., Garriga, M., : Influence of ordered and random parts on properties of InGaP alloy grown by MOVPE. In: EW MOVPE X. Univ. Lecce 2003. P. 161.

      1. Zakaria, A.: J. Applied Phys. 108 (2010) 074908.

Pinčík, E., Jergel, M., Falcony, C., Ortega, L., Ivančo, J., Brunner, K., Kučera, M., : Low-energy particle treatment of GaAs surface. Thin Solid Films 433 (2003) 108-113.

      1. Klyui, N.I.: Technical Phys. Lett. 38 (2012) 609.
2. Klyui, N.I.: Technical Phys. Lett. 38 (2012) 1016.

Pinčík, E., Kobayashi, H., Glesková, H., Kučera, M., Ortega, L., Jergel, M., Falcony, C., Brunner, K., Shimizu, T., Nádaždy, V., Zeman, M., Mikula, M., Kumeda, M., van Swaaijand, R., : Photoluminescence properties of a-Si:H based thin films and corresponding solar cells. Thin Solid Films 433 (2003) 344-351.

     1. Wu, D.: J. Rare Earths 30 (2012) 325.

Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., Alonso, M., Garriga, M., : Effect of strain and ordering on the band-gap energy of InGaP. Materials Sci Engn. B 88 (2002) 139-142.

     1. Kakumu, T.: Japan. J. Applied Phys. 42 (2003) 2230.
2. Yang, M.D.: Optics Express 16 (2008) 15754.
3. Yang, M.D.: Japan. J. Applied Phys. 47 (2008) 4499.
4. Longo, M.: J. Crystal Growth 311 (2009) 4293.
5. Jakomin, R.: Thin Solid Films 520 (2012) 6619.

Kučera, M., Novák, J., : Photoluminescence characterisation of Bismuth doped GaSb. In: ASDAM ’02. Ed. J.Breza and D.Donoval. Piscataway: IEEE 2002. ISBN: 0-7803-7276-X. P. 149.

      1. Segercrantz, N.: AIP Conf. Proc. 1583 (2014) 174.
2. Segercrantz, N.: Applied Phys. Lett. 105 (2014) 082113.
3. Fang, D.: Nanosci Nanotechnol. Lett. 7 (2015) 117.

Pinčík, E., Glesková, H., Müllerová, J., Nádaždy, V., Mraz, S., Ortega, L., Jergel, M., Falcony, C., Brunner, K., Gmucová, K., Zeman, M., van Swaaijand, R., Kučera, M., Juráni, R., Zahoran, M., : Properties of semiconductor surfaces covered with very thin insulating overlayers prepared by impacts of low-energy particles. Vacuum 67 (2002) 131-141.

        1. Yan, S.: Polymer Comp. 30 (2009) 1492.
2. Butvinova, B.: Applied Surface Sci 301 (2014) SI119.

Kúdela, R., Kučera, M., Novák, J., Ferrari, C., Pelosi, C., : Study of narrow InGaP/(In)GaAs quantum wells. J. Crystal Growth 242 (2002) 132-140.

      1. Begotti, M.: Applied Surface Sci 222 (2004) 423.
*    2. Gladkov, P.: ASDAM 2004. Piscataway: IEEE 2004. S. 17.
3. Saly, V.: Renewable Energy 31 (2006) 865.
4. Ichikawa, O.: J. Crystal Growth 298 (2007) 85.
5. Longo, M.: J. Crystal Growth 311 (2009) 4293.

Kicin, S., Novák, J., Hasenöhrl, S., Kučera, M., Meertens, D., : Photoluminescence characterization of InGaP/GaAs/InGaP quantum wires. Materials Sci & Engn. B 80 (2001) 184-187.

      1. Kwon, S.: Physical Rev. E 73 (2006) 025102.

Kúdela, R., Kučera, M., Olejníková, B., Eliáš, P., Hasenöhrl, S., Novák, J., : Formation of interfaces in InGaP/GaAs/InGaP quantum wells. J. Crystal Growth 212 (2000) 21-28.

1. Nakano, T.: J. Crystal Growth 221 (2000) 136.
2. Wallart, X.: Applied Phys. Lett. 81 (2002) 1086.
3. Wallart, X.: Phys. Rev. B 68 (2003) 235314.
*    4. Begotti, M.: 10th European Workshop on MOVPE. Lecce 2003.
5. Gladkov, P.: ASDAM 2004. Piscataway: IEEE 2004. P. 17.
6. Oliveira, C.L.N.: Applied Surface Sci 234 (2004) 38.
7. Laureto, E.: Inter. J. Modern Phys. B 18 (2004) 1743.
8. Chang, Y.M.: Applied Phys. Lett. 84 (2004) 2548.
9. Pelosi, C.: Crystal Research Technol. 40 (2005) 982.
10. Ribeiro, E.: Phys. Rev. B 73 (2006) 075330.
11. Pelosi, C.: J. de Physique IV 132 (2006) 205.
12. Zhang, X.B.: J. Electronic Mater. 35 (2006) 705.
13. Bosi, M.: Progress in Photovoltaics 15 (2007) 51.
14. Frigeri, C.: J. Electrochem. Soc. 156 (2009) H448.
15. Frigeri, C.: Superlatt. Microstr. 45 (2009) 451.
16. Silva, A.A.P.: J. Applied Phys. 106 (2009) 083521.
17. Frigeri, C.: Nanoscale Research Lett. 6 (2011) 194.
18. Bender, D.A.: Applied Phys. Lett. 102 (2013) 252102.
19. Wells, N.P.: J. Applied Phys. 118 (2015) 065703.
20. Ladugin, M. A.: Inorganic Mater. 55 (2019) 315.

Pinčík, E., Jergel, M., Kučera, M., van Swaaijand, R., Ivančo, J., Senderák, R., Zeman, M., Müllerová, J., Brunel, M., : Influence of the plasma pretreatment of GaAs(100) and Si(100) surfaces on the optical and structural properties of Si3N4/GaAs and a-SiGe/Si interfaces. Applied Surface Sci 166 (2000) 72-76.

#   1.Avakyants, L.P.: Bulletin Russian Acad. Sci: Physics 72 (2008) 941.

Pinčík, E., Jergel, M., Kučera, M., Brunel, M., Čičmanec, P., Šmatko, V., : Modification of the high-doped GaAs surface region bv its exposure to 150 keV proton beam Nuclear Instr. Methods in Phys. Research B 149 (1999) 81.

       1. Pollak, F.H.: Surface Interface Anal. 31 (2001) 938.

Kicin, S., Novák, J., Kučera, M., Hasenöhrl, S., Eliáš, P., Vávra, I., Hudek, P., : Preparation of stair-step grooves by wet etching of AlAs/GaAs heterostructures and MOCVD growth of QWR Materials Sci Engn. B 65 (1999) 106-110.

      1. Clawson A.R.: Materials Sci Engn. R 31 (2001) 1.
*    2. Gopal, M.: PhD Thesis. Nat. Univ. Singapore 2008.

Pinčík, E., Bartoš, P., Jergel, M., Falcony, C., Bartoš, J., Kučera, M., Kákoš, J., : The metastability of porous silicon/crystalline silicon structure Thin Solid Films 343-344 (1999) 277-280.

      1. Skryshevskii, Y.A.: J. Applied Phys. 89 (2001) 2711.
2. Tretyak, O.V.: Thin Solid Films 445 (2003) 144.
3. Skryshevsky, V.A.: Semicond. Sci Technol. 21 (2006) 1605.
#    4. Skryshevsky, V.A.: In Handbook of Porous Silicon. Springer 2014, ISBN 978-3-319-05744-6, pp. 335-344.
#     5. Skryshevsky, V.A.: In Handbook of Porous Silicon: Second Ed. Springer 2018, ISBN 978-3-319-71379-3, pp. 473-486.

Pinčík, E., Ivančo, J., Kučera, M., Almeida, J., Jergel, M., Krempasky, M., Margaritondo, G., Brunel, M., : X-ray photoemission and photoreflectance study of Au/ultraithin Si/n-GaAs Schottky contacts and hydrogen plasma treated semi-insulating GaAs surfaces Thin Solid Films 343-344 (1999) 328-331.

   1. Pollak, F.H.: Surface Interface Anal. 31 (2001) 938.

Hasenöhrl, S., Kučera, M., Novák, J., Bujdák, M., Eliáš, P., Kúdela, R., : MOCVD growth of InxGa1-xAs/GaAs multiple quantum well and superlattice structures for optical modulators Solid State Electron. 42 (1998) 263.

     1. Donkor, E.: Semiconductors Semimetals 73 (2001) 15.

Kúdela, R., Olejníková, B., Kučera, M., Hasenöhrl, S., : MOVPE growth of InGaP/GaAs interfaces. In: HEAD 97. Eds. P. Kordoš et al. NATO ASI Ser. 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 123.

     1. Bludska, J.: Czechoslov. J. Phys. 49 (1999) 775.

Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., : Resistivity anisotrophy in ordered InGaP grown at 640 C Applied Phys. Lett. 73 (1998) 369.

     1. Fink, V.: Applied Phys. Lett. 79 (2001) 2384.
2. Li, J.H.: Phys. Rev. B 63 (2001) 155310.
3. Jakomin, R.: Thin Solid Films 520 (2012) 6619.

Novák, J., Hasenöhrl, S., Kučera, M., Hjelt, K., Tuomi, T., : Sulphur doping of GaSb grown by atmospheric pressure MOVPE J. Crystal Growth 183 (1998) 69.

      1. Wiersma, R.D.: Phys. Rev. B 67 (2003) 165202.
2. Han, F.: Chem. Phys. Lett. 651 (2016) 183.

Novák, J., Kučera, M., Morvic, M., Betko, J., Förster, A., Kordoš, P., : Characterization of low-temperature GaAs by galvanomagnetic and photoluminiscence measurements Mater. Sci Engn. B 44 (1997) 341.

     1. Wang, J.S.: J. Vacuum Sci Technol. B 19 (2001) 202.

Pinčík, E., Jergel, M., Kučera, M., Brunel, M., : The influence of the inductively-coupled hydrogen plasma on the GaAs surface properties Thin Solid Films 299 (1997) 136H.

       1. Pollak, F.H.: Surface Interface Analysis 31 (2001) 938.

Kúdela, R., Novák, J., Kučera, M., : Zn-doped InGaP grown by the LP-MOCVD J. Electron. Mater. 25 (1997) 7.

1. Piskorski, L.: Semicond. Sci Technol. 22 (2007) 593.
2. Piskorski, L.: Opto-Electronics Rev. 16 (2008) 34.
3. Piskorski, L.: Applied Phys. A 98 (2010) 651.

Novák, J., Kučera, M., Lauer, S., Benz, K., : Photoluminiscence characterization of sulphur-doped GaSb grown by liquid phase electroepitaxy J. Crystal Growth 158 (1996) 1-5.

1. Swiatek, K.: Acta Phys. Polonica A 90 (1996) 1100.
2. Gladkov, P.: Semicond Sci Technol. 12 (1997) 1409.
3. Lvova, T.V.: IEE Proc.-Optpelectr. 145 (1998) 303
4. Papis, E.: Vacuum 57 (2000) 171.
5. Agert, C.: Semicond Sci Technol. 17 (2002) 39.
6. Vankova, V.: J. Crystal Growth 248 (2003) 279.
7. Herrera, D.J.: J. Vacuum Sci Technol. B 37 (2019) 031214.

Pinčík, E., Gmucová, K., Bartoš, J., Kučera, M., Jergel, M., Brunner, K., : Plasma anodic oxidation of semiinsulating GaAs Applied Surface Sci 93 (1996) 119-130.

      1. Lamberti, C.: Surface Sci Reports 53 (2004) 1.