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Mošková, A., Moško, M., Precner, M., Mikolášek, M., Rosová, A., Mičušík, M.,  Štrbík, V., Šoltýs, J., Gucmann, F., Dobročka, E., and Fröhlich, K.: Doping efficiency and electron transport in Al-doped ZnO films grown by atomic layer deposition, J. Applied Phys. 130 (2021) 035106.

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Mošková, A. and Moško, M.: Note on the Coulomb blockade of a weak tunnel junction with Nyquist noise: Conductance formula for a broad temperature range. Phys. Status Solidi C 14 (2017) 1700029.

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Krško, O., Plecenik, T., Moško, M., Haidry, A., Durina, P., Truchly, M., Grančič, B., Gregor, M., Roch, T., Satrapinsky, L., Mošková, A., Mikula, M., Kúš, P., and Plecenik, A.: Highly sensitive hydrogen semiconductor gas sensor operating at room temperature, Procedia Engn. 120 (2015) 618-622.

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Plecenik, T., Moško, M., Haidry, A., Durina, P., Truchly, M., Grančič, B., Gregor, M., Roch, T., Satrapinskyy, L.,Mošková, A., Mikula, M., Kúš, P., and Plecenik, A.: Fast highly-sensitive room-temperature semiconductor gas sensor based on the nanoscale Pt-TiO2-Pt sandwich, Sensors Actuators B 207 (2015) 351-361.

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Plecenik, A., Haidry, A.A., Plecenik, T., Durina, P., Truchly, M., Moško, M., Grančič, B., Gregor, M., Roch, T., Satrapinsky, L., Mošková, A., Mikula, M., and Kúš, P.: Metal oxide gas sensors on the nanoscale, Proc. SPIE 9083 (2014) 9083OY.

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Mošková, A., Moško, M., Tóbik, J., : Theoretical study of persistent current in a nanoring made of a band insulator. Phys. Status Solidi B 250 (2013) 147-159.

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Mošková, A., Moško, M., : Phase-shift analysis of two-dimensional carrier-carrier scattering in GaAs and GaN: Comparison with Born and classical approximations. Phys. Rev. B 61 (2000) 3048.

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Moško, M., Mošková, A., and Cambel, V.: Carrier-carrier scattering in photoexcited intrinsic GaAs quantum wells and its effect on femtosecond plasma thermalization Phys. Rev. B 51 (1995) 16860.

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