doc. Ing. Peter KORDOŠ, DrSc.

2017

Florovič, M., Stoklas, R., Kováč, J., Kordoš, P., : Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors,. Semicond. Sci Technol. 32 (2017) 025017.

Gregušová, D., Gucmann, F., Kúdela, R., Mičušík, M., Stoklas, R., Válik, L., Greguš, J., Blaho, M., and Kordoš, P.: Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment,. Applied Surface Sci 395 (2017) 140-144.

Stoklas, R., Gregušová, D., Blaho, M., Fröhlich, K., Novák, J., Matys, M., Yatabe, Z., Kordoš, P., and Hashizume, T.: Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction,. Semicond. Sci Technol. 32 (2017) 045018.

2016

Mikulics, M., Arango, Y., Winden, A., Adam, R., Hardtdegen, A., Grützmacher, D., Plinski, E., Gregušová, D., Novák, J., Kordoš, P., Moonshiram, A., Marso, M., Sofer, Z., Lüth, H., and Hardtdegen, H.: Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes. Applied Phys. Lett. 108 (2016) 061107.

2015

Gucmann, F., Kúdela, R., Kordoš, P., Dobročka, E., Gaži, Š., Dérer, J., Liday, J., Vogrinčič, P., Gregušová, D. : III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O2 plasma-oxidized GaAs cap. J. Vacuum Sci Technol. B 33 (2015) 01A111.

Osvald, J., Stoklas, R., and Kordoš, P.: Low- and high-frequency capacitance of aluminum gallium nitride/gallium nitride heterostructures with interface traps. Mater. Sci in Semicond. Process. 31 (2015) 525-529.

Osvald, J., Stoklas, R., and Kordoš, P. : Extraction of interface trap density of Al2O3/AlGaN/GaN MIS heterostructure capacitance. Phys. Status Solidi B 252 (2015) 996-1000.

2014

Mikulics, M., Hardtdegen, H., Adam, R., Grützmacher, D., Gregušová, D., Novák, J., Kordoš, P., Sofer, Z., Serafini, J., Zhang, J., Sobolewski, R., Marso, M., : Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructures. Semicond. Sci Technol. 29 (2014) 045022.

Mikulics, M., Hardtdegen, H., Arango, Y., Adam, R., Fox, A., Grützmacher, D., Gregušová, D., Stanček, S., Novák, J., Kordoš, P., Sofer, Z., Juul, L., Marso, M., : Reduction of skin effect losses in double-level-T-gate structure. Applied Phys. Lett. 105 (2014) 232102.

Gucmann, F., Gregušová, D., Stoklas, R., Dérer, J., Kúdela, R., Fröhlich, K., and Kordoš, P. : InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator. Applied Phys. Lett. 105 (2014) 183504.

Stoklas, R., Gregušová, D., Hušeková, K., Marek, J., Kordoš, P., : Trapped charge effects in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 and ZrO2 gate insulator. Semicond. Sci Technol. 29 (2014) 045003.

2013

Kordoš, P., Stoklas, R., Gregušová, D., Hušeková, K., Carlin, J.-F., and Grandjean, N.: Defect states characterization of non-annealed and annealed Zr2/InAlN/GaN structures by capacitance measurements, Applied Phys. Lett. 102 (2013) 063502.

Gregušová, D., Hušeková, K., Stoklas, R., Blaho, M., Jurkovič,, Carlin, J.-F., Grandjean, N., and Kordoš, P.: : Zr2/InAlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with InAlN barrier of different compositions, Japan. J. Applied Phys. 52 (2013) 08JN07.

Blaho, M., Gregušová, D.,  Jurkovič, M., Haščík, Š., Fedor, J., Kordoš, P., Fröhlich, K., Brunner, F., Cho, M., Hilt, O., Wurfl, J., and Kuzmík, J.:  Ni/Au-Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOSHEMTs. Microelectr. Engn. 112 (2013) 204-207.

2012

Mikulics, M., Hardtdegen, H., Winden, A., Fox, A., Marso, M., Sofer, Z., Lüth, H., Grützmacher, D., and Kordoš, P.: Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements, Phys. Stat. Solidi C 9 (2012) 911.

Mikulics, M., Hardtdegen, H., Gregušová, D., Sofer, Z., Simek, P., Trellenkamp, S., Grützmacher, D., Luth H., Kordoš, P., and Marso, M.: Non-uniform distribution of induced strain in gate recessed AlGaN/GaN structure evaluated by micro PL measurements, Semicond. Sci Technol. 27 (2012) 105008.

Kordoš, P., Škriniarová, J., Chvála, A., Florovič, M., Kováč, J., Donoval, D., : Electrical and optical characterization of Ni/Al0.3Ga0.7N/GaN Schottky barrier diodes. J. Electronic Mater. 41 (2012) 3017-3020.

Kordoš, P., Mikulics, M., Stoklas, R., Čičo, K., Dadgar, A., Grützmacher, D., Krost, A., : Thermally oxidized InAlN of different compositions for InAlN/GaN heterostructure field-effect transistors. J. Electronic Mater. 41 (2012) 3013-3016.

Kordoš, P., Fox, A., Kúdela, R., Mikulics, M., Stoklas, R., and Gregušová, D.: GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD. Semicond. Sci Technol. 27 (2012) 115002.

Kováč, J., Šatka, A., Chvála, A., Donoval, D., Kordoš, P., Delage, S., : Gate leakage current on GaN-based mesa- and planar-type heterostructure field-effect transistors. Microelectron. Reliability 52 (2012) 1323-1327.

KordošP., Kúdela, R., Stoklas, R., Čičo, K., Mikulics, M., Gregušová, D., and Novák, J.: Aluminium oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition, Applied Phys. Lett. 100 (2012) 142113.

Mikulics, M., Fox, A., Marso, M., Grützmacher, D., Donoval, D., and KordošP.: Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate, Vacuum 86 (2012) 754-756.

KordošP., Stoklas, R., Čičo, K., and Mikulics, M.: Comparative study of InAlN/GaN HFETs with and without thermal oxidized InAlN of different composition. In: Proc. 18thInter. Conf. on Applied Phys. of Cond. Matter (APCOM 2012). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 165-168.

Benko, P., Kováč, J., Škriniarová, J., KordošP., and Harmatha, L.: Influence of layer structure on performance of AlGaN/GaN HEMTs. In: Proc. 18th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2012). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 227-230.

2011

Eickelkamp, M., Weingarten, M., Khoshroo, R.L., Ketteniss, N., Behmenburg, H., Heuken, M., Donoval, D., Chvála, A., KordošP., Kalisch, H., and Vescan, A.: Electrical properties of thermally oxidized AlInN/AlN/GaN-based metal oxide semiconductor hetero field effect transistors, J. Applied Phys. 110 (2011) 084501.

Mikulics, M., KordošP., Gregušová, D., Adam, R., Kočan, M., Wu, S., Zhang, J., Sobolewski, R., Grützmacher, D., and Marso, M.: Monolithic integration of ultrafast photodetector and MESFET in the GaN material system, IEEE Photonics Technol. Lett. 23 (2011) 1189-1191.

Donoval, D., Chvála, A., Šramatý, R., Kováč, J., Morvan, E., Dua, Ch., Sibboni, H., DiForte-Poisson, M.A., and KordošP.: Transport properties and barrier height evaluation in Ni/InAlN/GaN Schottky diodes, J. Applied Phys. 109 (2011) 063711.

Kováč, J., Šramatý, R., Chvála, A., Sibboni, H., Morvan, E., DiForte-Poisson, M.A., Donoval, D., and KordošP.: Schottky barrier height on thermally oxidized InAlN surface evaluated by electrical and optical measurements, Applied Phys. Lett. 98 (2011) 162111.

Stoklas, R., Gregušová, D., Gaži, Š., Novák, J., and KordošP.: Performance of AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors with AlN gate insulator prepared by reactive magnetron sputtering, J. Vacuum Sci Technol. B 29 (2011) 01A809.

Florovič, M., Hronec, P., Kováč, J., KordošP., Škriniarová, J., and Donoval, D.: Off-state stress and pulse response investigation of InAlN/GaN HFET. In: 17th Inter. Conf. on Applied Physics of Condensed Matter – APCOM. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 130-134.

KordošP.: Preparation and properties of GaN-based MOSHEFTs. In: Proc. 35th Workshop on Compound Semicond. Devices and Integrated Circuits – WOCSDICE 2011. Eds. V. Raineri and F. Roccaforte. CNR 2011. P. 135-139.

2010

Mikulics, M., Stoklas, R., Dadgar, A., Gregušová, D., Novák, J., Grützmacher, D., Krost, A., and KordošP.: InAlN/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAlN, Applied Phys. Lett. 97 (2010) art. no. 173505.

Gregušová, D., Gaži, Š., Sofer, Z., Stoklas, R., Dobročka, E., Mikulics, M., Greguš, J., Novák, J., and KordošP.: Oxidized Al film as an insulation layer in AlGaN/GaN metal-oxide-semiconductor structure heterostructure field effect transistors, Japan. J. Applied Phys. 49 (2010) art. no. 046504.

Donoval, D., Chvála, A., Šramatý, R., Kováč, J., Carlin, J.-F., Grandjean, N., Pozzovivo, G., Kuzmík, J., Pogany, D., Strasser, G., and KordošP.: Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes, Applied Phys. Lett. 96 (2010) 223501.

KordošP., Stoklas, R., Gregušová, D., Gaži, Š., and Novák, J.: Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurement, Applied Phys. Lett. 96 (2010) art. no. 013505.

Gregušová, D., Stoklas, R., Mizue, Ch., Hori, Y., Novák, J., Hashizume, T., and KordošP.: Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3prepared by atomic layer deposition, J. Applied Phys. 107 (2010) art. no. 106104.

KordošP., Mikulics, M., Fox, A., Gregušová, D., Čičo, K., Carlin, J.-F., Grandjean, N., Novák, J., and Fröhlich, K.: RF performance of InAlN/GaN HFETs and MOSHFETs with ƒT × LG up to 21 GHz · µm, IEEE Electron Dev. Lett. 31 (2010) 180-182.

Gregušová, D., Mizue, Ch., Hori, Y., Stoklas, R., Novák, J., Hashizume, T., and KordošP.: Trapping effects in Al2O3/AlGaN/GaN MOS structures with gate oxide prepared by different deposition techniques. In: 10th Expert Evaluation & Control Compound Semicond Mater. & Technol. – EXMATEC 2010. Eds. D. Pavlidis et al. Darmstadt/Seeheim: TU Darmstadt 2010. ISBN: 978-3-00-030837-6. P. 139-140.

Donoval, D., Chvála, A., Pozzovivo, G., Šramatý, R., Carlin, J.-F., Kováč, J., Kuzmík, J., Strasser, G., Grandjean, N., and KordošP.: Current transport in Ni/InAlN/GaN Schottky diodes. In: 34th Workshop on Compound Semicond. Devices and Integrated Circuits held in Europe – WOCSDICE 2010. Eds. D. Pavlidis et al. Darmstadt/Seeheim: TU Darmstadt 2010. ISBN: 978-3-00-030838-3. P. 45-56.

Florovič, M., Kováč, J., Škriniarová, J., Lalinský, T., Haščík, Š., KordošP., Donoval, D., Kinder, R., and Tomáška, M.: Electrical properties of Al0,3Ga0,7N/GaN heterostructure field effect transistor. In: 16th Inter. Conf. on Applied Physics of Condensed Matter – APCOM. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 205-209.

Florovič, M., Kováč, J., Behmenburg, H., KordošP., Škriniarová, J., and Donoval, D.: Off-state stress investigation of InAlN/GaN HFETs with different AlN buffer layer. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 97-100.

Stoklas, R., Gregušová, D., Blaho, M., KordošP., Tajima, M., and Hashizume, T.: Preparation and properties of AlGaN/GaN MOS-HFETs with atomic layer deposited Al2O3 as gate oxide. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 155-158.

Fox, A., Mikulics, M., Strang, B., Marso, M., Grützmacher, D., and KordošP.: Comparison of AlGaN/GaN HFETs and MOSHFETs in prospect of oscillator design. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 159-162.

Chvala, A., Donoval, D., Sramaty, R., Marek, J., Kováč, J., KordošP., and Škriniarová, J.: Characterization of electrical properties of InAlN/GaN Schottky diode at very high temperature. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 115-118.*

Marek, J., Donoval, D., Kováč, J., Molnar, M., Chvala, A., and KordošP.: Analysis of structure geometry and interface charge on electrical characteristics of InAlN/GaN HEMTs. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 143-146.*

Gregušová, D., Hori, Y., Mizue, Ch., Stoklas, R., Sugawara, K., Hashizume, T., and KordošP.: Density of trap states in Al2O3/AlGaN/GaN MOS structures with gate oxide prepared by atomic layer deposition. In: Collect. Abstracts of 2010 Inter. RCIQE/CREST Joint Workshop. Hokkaido Univ. 2010. P. 34-35.

2009

KordošP., Stoklas, R., Gregušová, D., and Novák, J.: Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis, Applied Phys. Lett. 94 (2009) art. no. 223512.

Gregušová, D., Stoklas, R., Eickelkamp, M., Fox, A., Novák, J., Vescan, A., Grützmacher, D., and KordošP.: Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements, Semicond. Sci Technol. 24 (2009) art. no. 075014.

Mikulics, M., Marso, M., Lepsa, M., Grützmacher, D., and KordošP.: Output power improvement in MSM photomixers by modified finger contacts configuration, IEEE Photon. Technol. Lett. 21 (2009) 146-148.

Guarino, G., Donaldson, W.R., Mikulics, M., Marso, M., KordošP., and Sobolewski, R.: Finite element simulation of metal-semiconductor-metal photodetector, Solid-State Electron. 48 (2009) 1144.

KordošP., Fox, A., Stoklas, R., Eickelkamp, M., Gregušová, D., Grützmacher, A., and Vescan, A..: Improved high-frequency performance of Al2O3/AlGaN/GaN MISHFETs compared to AlGaN/GaN HFETs. In: APCOM 2009. Proc. 15st Inter. Conf. on Applied Phys. Cond. Matter. Eds. D. Pudiš et al. Žilina: Univ. Žilina 2009. ISBN: 978-80-554-0057-0. P. 25-28.

Florovič, M., Kováč, J., Škriniarová, J., Donoval, D., KordošP., Paszkiewicz, R., Tlaczala, M., Lalinský, T., and Haščík, Š.: Influence of off-state stress on electrical properties of Al0,19Ga0,81N/GaN heterostructure field effect transistor. In: APCOM 2009. Proc. 15st Inter. Conf. on Applied Phys. Cond. Matter. Eds. D. Pudiš et al. Žilina: Univ. Žilina 2009. ISBN: 978-80-554-0057-0. P. 45-48.

Pecháček, J., Škriniarová, J., Harmatha, L., Kováč, J., Paszkiewicz, R., KordošP., Donoval, D., and Tlaczala, M.: Current transport in Ni/AlGaN/GaN Schottky diodes evaluated from I-V characteristics measured at high temperatures. In: APCOM 2009. Proc. 15st Inter. Conf. on Applied Phys. Cond. Matter. Eds. D. Pudiš et al. Žilina: Univ. Žilina 2009. ISBN: 978-80-554-0057-0. P. 41-44.*

Kúdela, R., Gregušová, D., Stoklas, R., Šoltýs, J., Kučera, M., Dobročka, E., and KordošP.: HEMT transistors with aluminum oxide and InGaP layers. In: EW-MOVPE XIII: 13th European Workshop on Metalorganic Vapour Phase Epitaxy.Ulm Univ. 2009. P. 225-228.

2008

KordošP., Donoval, D., Florovič, M., Kováč, J., and Gregušová, D.: Investigation of trap effects in AlGaN/GaN field-effect transistors by temperature dependent threshold voltage analysis, Applied Phys. Lett. 92 (2008) art. no. 152113.

KordošP., Gregušová, D., Stoklas, R., Gaži, Š., and Novák, J.: Transport properties of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with Al2O3 different thickness, Solid-State Electr. 52 (2008) 973-979.

Stoklas, R., Gregušová, D., Novák, J., Vescan, A., and KordošP.: Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis, Applied Phys. Lett. 93 (2008) art. no. 124103.

Mikulics, M., Marso, M., Wu, S., Fox, A., Lepsa, M., Grützmacher, D., Sobolewski, R., and KordošP.: Sensitivity enhancement of metal-semiconductor-metal photodetectors on low-temperature-grown GaAs using alloyed contacts, IEEE Photon. Technol. Lett. 20 (2008) 1054.

Donoval, D., Florovič, M., Gregušová, D., Kováč, J., and KordošP.: High temperature performance of AlGaN/GaN HFETs and MOSHFETs, Microelectron. Reliab. 48(2008) 1669.

Stoklas, R., Gaži, Š., Gregušová, D., Novák, J., and KordošP.: Enhancement of effective carrier velocity in AlGaN/GaN MOSHFETs with Al2O3 gate oxide, Physica Status Solidi c 5 (2008) 1935-1937.

Florovič, M., KordošP., Donoval, D., Gregušová, D., and Kováč, J.: Performance of AlGaN/GaN heterostructure field – effect transistors at higher ambient temperatures, J. Electr. Engn. 59 (2008) 53-56.

Stoklas, R., Gregušová, D., Novák, J., and KordošP.: Influence of annealing on electrical properties of AlGaN/GaN HFETs and MOSHFETs using Al2O3. In: ASDAM 2008. The 7th Inter. Conf. Advanced Semicond. Devices Microsyst. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 263-266.

Florovič, M., Kováč, J., KordošP., Škriniarová, J., Lalinský, T., Haščík, Š., Michalka, M., Donoval, D., and Uherek F.: Electrical properties of ohmic contacts for Al0.3Ga0.7N/GaN semiconductor devices. In: ASDAM 2008. The 7th Inter. Conf. Advanced Semicond. Devices Microsyst. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 103-106.

Škriniarová, J., Florovič, M., Kováč, J., Donoval, D., and KordošP.: Reliability issues of AlGaN/GaN heterostructures field-effect transistors. In: ASDAM 2008. The 7stInter. Conf. Advanced Semicond. Devices Microsyst. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 247-250.

KordošP., Florovič, M., Stoklas, R. , Gregušová, D., and Donoval, D.: Characterization of Al2O3/AlGaN/GaN MOSHFETs and AlGaN/GaN HFET by measurements at elevated temperatures. In: Proc. 14st Inter. Conf. Applied Phys. Condensed Matter: APCOM 2008. Eds. J. Vajda et al. Bratislava: STU, 2008. ISBN 978-80-227-2902-4. P. 109-112.

Florovič, M., Kováč, J., Škriniarová, J., Lalinský, T., Haščík, Š., Michalka, M., KordošP., Donoval, D., and Uherek F.: Electrical properties of Al0.3Ga0.7N/GaN heterostructure field effect transistor. In: Proc. 14th Inter. Conf. Applied Phys. Condensed Matter: APCOM 2008. Eds. J. Vajda et al. Bratislava: STU, 2008. ISBN 978-80-227-2902-4. P. 61-64.

Gregušová, D., Stoklas, R., Florovič, M., Novák, J., Donoval, D., and KordošP.: Trapping effects in AlGaN HFETs and Al2O3/AlGaN/GaN MOSHFETs. In: Inter. Workshop on Nitride Semicond. – IWN 2008. Book of Ext. Abstract Montreux 2008. P. 312.

2007

KordošP., Gregušová, D., Stoklas, R., Čičo, K., and Novák, J.: Improved transport properties of Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect tranzistor, Applied Phys. Lett. 90 (2007) art. no. 123513.

KordošP., Marso, M., and Mikulics, M.: Performance optimization of GaAs-based photomixers as sources of terahertz radiation, Applied Phys. A 87 (2007)563-567.

Gregušová, D., Stoklas, R., Čičo, K., Heidelberg, G., Marso, M., Novák, J., and KordošP.: Characterization of AlGaN/GaN MOSHFETs with Al2O3 as gate oxide, Physica Status Solidi c 4 (2007) 2720-2723.

Gregušová, D., Stoklas, R., Čičo, K., Lalinský, T., and Kordoš, P.: AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with 4nm thick Al2O3 gate oxide, Semicond. Sci Technol. 22 (2007) 947-951.

KordošP., Gregušová, D., Stoklas, R., Lalinský, T., and Novák, J.: Transconductance enhancement in AlGaN/GaN MOSHEFTs with Al2O3 gate oxide. In: Proc. 31stWorkshop on Compound Semiconductor Devices and Integrated Circuits. Ed. G. Meneghesso. Venice 2007. P. 381-384.

Faqir, M., Chini, G., Verzellesi, G., Fantini, F., Rampazzo, F., Meneghesso, G., Zanoni, E., and KordošP.: Analysis of high-electric-field degradation in AlGaN/GaN HEMTs. In: Proc. 31st Workshop on Compound Semiconductor Devices and Integrated Circuits. Ed. G. Meneghesso. Venice 2007. P. 101-104.

Gregušová, D., Stoklas, R., Čičo, K., Lalinský, T., Fröhlich, K., Novák, J., and KordošP.: Preparation and properties of MOSHFETs based on MOVPE grown AlGaN/GaN heterostructure and MOCVD deposited Al2O3 gate oxide. In: 12th European Workshop on Metalorganic Vapour Phase Epitaxy – EW-MOVPE XII: extended abstracts. Bratislava: IEE SAS, 2007. P. 85-88.

2006

KordošP.: Material and device issues of AlGaN/GaN high electron mobility transistors. In: Handbook of Semiconductor Nanostures and Nanodevices. Vol. 3: Spintronics and Nanoelectronics. Eds. A.A.Balandin et al. Valencia: American Sci Publ., 2006. P. 95-152.

Mikulics, M., Marso, M., Mantl, S., Lüth, H., and KordošP.: GaAs photodetectors prepared by high-energy and high-dose nitrogen implantation, Applied Phys. Lett. 89(2006) 091103.

Marso, M., Heidelberg, G., Indlekofer, K.M., Bernat, J., Fox, A., KordošP., and Lüth, H.: Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs, IEEE Trans. Electron Dev. 53 (2006) 1517-1523.

Meneghesso, G., Rampazzo, F., KordošP., Verzellesi, G., and Zanoni, E.: Current-collapse and hot-electron-reliability characteristics of unpassivated GaN/AlGaN/GaN HEMTs, IEEE Trans. Electron Devices 53 (2006) 2932.

Marso, M., Fox, A., Heidelberg, G., KordošP., and Lüth, H.: Comparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHEFT layer structures, IEEE Electron Dev. Lett. 27 (2006) 945-947.

KordošP., Kúdela, R., Gregušová, D., and Donoval, D.: The effect of passivation on the performance of AlGaN/GaN heterostructure field-effect transistors, Semicond. Sci Technol. 21 (2006) 1592-1596.

Mikulics, M., Michael, E.A., Marso, M., Lepsa, M., van der Hart, A., Lüth, H., Dewald, A., Stanček, S., Mozolik, M., and KordošP.: Traveling-wave photomixers fabricated on high energy nitrogen-ion-implanted GaAs, Applied Phys. Lett. 89 (2006) 071103-1-3.

Mikulics, M., Wu, S., Marso, M., Adam, R., Förster, A., van der Hart, A., KordošP., Lüth, H., and Sobolewski, R.: Ultrafast and highly sensitive LT-GaAs MSM photodetectors with recessed electrodes, IEEE Photonic Technol. Lett. 18 (2006) 820.*

Mikulics, M., Michael, E.A., Schieder, R., Stutzki, J., Güsten, R., Marso, M., van der Hart, A., Bochem, H.P., Lüth, H., and KordošP.: Travelling-wave photomixer with recessed interdigitated contacts on low-temperature-grown GaAs, Applied Phys. Lett. 88 (2006) 041118.

KordošP., Bernát, J., Gregušová, D., Marso, M., and Lüth, H.: Impact of surface treatment under the gate on the current collapse of unpassivated AlGaN/GaN heterostructure field-effect transistors, Semicond. Sci Technol. 21 (2006) 67-71.

Faqir, M., Chini, A., Verzellesi, G., Fantini, F., Rampazzo, F., Meneghesso, G., Zanoni, E., Bernat, J., and KordošP.: Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN HEMTs. In: Proc. 2006 ROCS Workshop – Reliability of Compound Semiconductors. Piscataway: IEEE 2006. P. 25-31.

Srnanek, R., Geurts, J., Lentze, M., Irmer, G., Kovac, J., Donoval, D., Mc Phail, D.S., KordošP., Florovic, M., Vincze, A., Sciana, B., Radziewicz, and Tlaczala, M.: Determination of the doping concentration profile in Si -doped GaAs layers using micro-Raman spectroscopy of bevelled structures, Thin Solid Films 497 (2006) 7-15.*

Heidelberg, G., Bernát, J., Fox, A., Marso, M., Lüth, H., Gregušová, D., and KordošP.: Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHEFTs, Physica Status Solidi a 203 (2006) 1876-1881.

Mayorga Cámara, I., Munoz Pradas, P., Michael, E.A., Mikulics, M., Schmitz, A., van der Wal, P., Kaseman, C., Güsten, R., Jacobs, K., Marso, M., Lüth, H., and KordošP.: Terahertz photonic mixers as local oscillators for hot electron bolometer and superconductor-insulator-superconductor astronomical receivers, J. Applied Phys. 100 (2006) art. no. 043116.*

Fox, A., Marso, M., Heidelberg, G., and KordošP.: RF characterization and modeling of AlGaN/GaN based HFETs and MOSHFETs. In: ASDAM 2006. Proc. 6th Int. Conf. on Advanced Semiconductor Devices and Microsystems. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P.109-112.

Mikulics, M., Marso, M., Stanček, S., Michael, E.A., and KordošP.: Terahertz-radiation photomixers on nitrogen-implanted GaAs. In: ASDAM 2006. Proc. 6th Int. Conf. on Advanced Semiconductor Devices and Microsystems. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 117-120.

Marso, M., Fox, A., Heidelberg, G., KordošP., and Lüth, H.: Comparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHFET layer structures. In: ASDAM 2006. Proc. 6th Int. Conf. on Advanced Semiconductor Devices and Microsystems. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 229-232.

Heidelberger, G., Roeckerath, M., Steins, R., Stefaniak, M., Fox, A., Schubert, J., Kaluza, N., Marso, M., Lüth, H., and KordošP.: Technology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric. In: ASDAM 2006. Proc. 6th Int. Conf. on Advanced Semiconductor Devices and Microsystems. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 241-244.

Stoklas, R., Čičo, K., Gregušová, D., Novák, J., and KordošP.: Preparation and properties of AlGaN/GaN MOSHFETs with MOCVD Al2O3 as gate oxide. In: ASDAM 2006. Proc. 6th Int. Conf. on Advanced Semiconductor Devices and Microsystems. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 249-252.

2005

Mikulics, M., Kocan, M., Rizzi, A., Javorka, P., Sofer, Z., Stejskal, J., Marso, M., KordošP., and Lüth, H.: Growth and properties of GaN and AlN layers on silver substrates, Applied Phys. Lett. 87 (2005) 212109.*

KordošP., Heidelberg, G., Bernát, J., Fox, A., Marso, M., and Lüth, H.: High-power SiO2/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors, Applied Phys. Lett. 87 (2005) 143501-143504.

KordošP., Bernát, J., Marso, M., Lüth, H., Rampazzo, F., Tamiazzo, G., Pierobon, R., and Meneghesso, G.: Influnce of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors, Applied Phys. Lett. 86 (2005) 253511.

KordošP., Bernát, J., and Marso, M.: Impact of layer structure on performance of unpassivated AlGaN/GaN HEMT, Microelectronics J. 36 (2005) 438-441.

Bernát, J., Gregušová, D., Heidelberg, G., Fox, A., Marso, M., Lüth, H., and KordošP.: SiO2/AlGaN/GaN MOSHFET with 0.7 μm gate-length and fmax/fT of 40/24 GHz, Electronics Lett. 41 (2005) 667-668.

Marso, M., Mikulics, M., Adam, R., Wu, S., Zheng, X., Camara, I., Siebe, F., Förster, A., Güsten, R., KordošP., and Sobolewski, R.: Ultrafast phenomena in freestanding LT-GaAs devices, Acta Phys. Polonica A 107 (2005) 109-117.*

Gregušová, D., Bernát, J., Držík, M., Marso, M., Uherek, F., Novák, J., and KordošP.: Influence of passivation induced stress on the performance of AlGaN/GaN HEMTs, Phys. Status Solidi c 2 (2005) 2619-2622.

Michael, E. A., Vowinkel, B., Schieder, R., Mikulics, M., Marso, M., and KordošP.: Large-area travelling-wave photonic mixers for increased terahertz power, Applied Phys. Lett. 86 (2005) 111120.*

Bernát, J., Pierobon, R., Marso, M., Flynn, J., Brandes, G., Meneghesso, G., Zanoni, E., and KordošP.: Low current dispersion and low bias-stress degradation of unpassivated GaN/AlGaN/GaN/SiC HEMTs, Phys. Status Solidi (c) 2 (2005) 2676.*

Marso, M., Bernát, J., Javorka, P., Fox, A., and KordošP.: Influence of carrier supply doping on the RF properties of AlGaN/GaN/SiC high-electron-mobility transistors, Phys. Status Solidi (c) 2 (2005) 2611.*

Mikulics, M., Marso, M., Javorka, P., KordošP., Lüth, H., Kocan, M., Rizzi, A.,Wu, S., and Sobolewski, R.: Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN, Applied Phys. Lett. 86 (2005) 211110.*

Mikulics, M., Marso, M., Cámara Mayorga, I.,Güsten, R., Stanček, S., Kováč, P., Wu, S., Xia, Li, Khafizov, M., Sobolewski, R., Michael,E.A., Schieder, R., Wolter, M., Buca, D., Förster, A., KordošP., and Lüth, H.: Photomixers fabricated on nitrogen-ion-implanted GaAs, Applied Phys. Lett. 87 (2005) 041106.*

Mikulics, M., Adam, R., Marso, M., Förster, A., KordošP., Lüth, H., Wu, S.,Zheng,X., and Sobolewski, R.: Ultrafast low-temperature-grown epitaxial GaAs photodector transfered on flexibile plastic substrates, IEEE Photonics Technol.Lett. 17 (2005) 1725-1727.*

Meneghesso, G., Pierobon, R., Rampazzo, F., Tamiazzo, G., Zanoni, E., Bernat, J., KordošP., Basile, A.F., Chini, A., and Verzellesi, G.: Hot electron stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC. In: 43th IEEE Inter. Reliability Physics Symp. Proc. IEEE Catalog No. 05CH37616. 2005, P. 415-422.*

KordošP., Bernát, J., Heidelberger, G., and Marso, M.: Performance of AlGaN/GaN heterostructure field-effect transistors for high-frequency and high-power electronics, Advances in Electrical and Electronic Engn. 4 (2005) 67-70.

Kuzmik, J., Bychikhin, S., Dubec, V., Blaho, M., Marso, M., KordošP., Suski, T., Bockowski, M., Grzegory, I., and Pogany, D.: Characterization of III-Nitride group semiconductors and devices using optical methods. In: WOCSDICE 05 – the 29th Workshop on Compound Semicond. Devices and Integrated Circuits held in Europe. Cardiff 2005. P. 61-62.

Lalinský, T., Vanko, G., Gregušová, D., Mozolová, Ž., Haščík, Š., and KordošP.: Schottky gate contacts for AlGaN/GaN based HEMTs. In: Proc. IMAPS CS Inter. Conf. EDS’05. Brno: VUT 2005. P. 242-247. ISBN 80-214-2990-9.

Osvald, J. and KordošP.: Dimensionally dependent barrier height in Ni/Au-AlGaN Schottky diodes. In: 14th Inter. Workshop on Heterostructure Technol. (HETECH 05). Sci Program. & Book of Abstracts. Bratislava: ElÚ SAV 2005.

Heidelberg, G., Bernát, J., Gregušová, D., Fox, A., Marso, M., Lüth, H., and KordošP.: Investigation of AlGaN/GaN-based MOSHFET performance relative to conventional and SiO2-passivated HFETs. In: 14th Inter. Workshop on Heterostructure Technol. (HETECH 05). Sci Program. & Book of Abstracts. Bratislava: ElÚ SAV 2005.

Mikulics, M., Michael, E.A., Marso, M., Van der Hari, A., Güsten, R., Schieder, R., and KordošP.: Travelling-wave photonic mixers on LT-GaAs for increased continuous terahertz power. In: 14th Inter. Workshop on Heterostructure Technol. (HETECH 05). Sci Program. & Book of Abstracts. Bratislava: ElÚ SAV 2005.

Kúdela, R., Gregušová, D., Donoval, D., and KordošP.: Influence of passivation on current collapse of AlGaN/GaN HEMTs. In: 14th Inter. Workshop on Heterostructure Technol. (HETECH 05). Sci Program. & Book of Abstracts. Bratislava: ElÚ SAV 2005.

2004

Rey-de-Castro, R., Wang, D., Zheng, X., Verevkin, A., Sobolewski, R., Mikulics, M., Adam, R., KordošP., and Mycielski, A.: Subpicosecond Faraday effect in CdMnTe and its application in magneto-optical sampling, Applied Phys. Lett. 85 (2004) 3806.*

Marso, M., Wolter, M., and KordošP.: A novel two-color photodetector based on an InAlAs-InGaAs HEMT layer structure, IEEE Photonic Technol. Lett. 16 (2004) 2541.*

KordošP., Morvic, M., Betko, J., Novák, J., Flynn, J., and Brandes, G.: Conductivity and Hall effect of freestanding highly-resistive epitaxial GaN:Fe substrates, Applied Phys. Lett. 85 (2004) 5616-5620.

Zaťko, B., Dubecký, F., Boháček, P., Gombia, E., Frigeri, P., Mosca, R., Franchi, S., Huran, J., Nečas, V., Sekáčová, M., Förster, A., and KordošP.: On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs, Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 111-120.

Bernat, J., Wolter, M., Fox, A., Marso, M., Flynn, J., Brandes, G., and KordošP.: Impact of layer structure on performance of unpassivated AlGaN/GaN/SiC HEMTs, Electronics Lett. 40 (2004) 78-80.*

Trellenkamp, S., Moers, J., van der Hart, A., KordošP., and Lüth, H.: Fabrication of silicon webs in the decananometre range, Applied Physics A 78 (2004) 627-628.*

Marso, M., Bernat, J., Javorka, P., and KordošP.: Influence of a carrier supply layer on carrier density and drift mobility of AlGaN/GaN/SiC high-electron-mobility transistors, Applied Physics Lett. 84 (2004) 2928-2930.*

Kuzmik, J., Pogany D., Gornik E., Javorka, P., KordošP.: Electrical overstress in AlGaN/GaN HEMTs: study of degradation processes, Solid-State Electr. 48 (2004) 271-276.

Srnanek, R., Geurts, J., Lentze, M., Irmer, G., Donoval, D., Brdecka, P., KordošP., Förster, A., Sciana, B., Radziewicz, D., and Tlaczala, M.: Study of δ-doped GaAs layers by micro-Raman spectroscopy on bevelled samples, Applied Surface Sci 230 (2004) 379-385.*

Mikulics, M., Wolter, M.J., Marso, M., Camara, I., Stanček, S., Wu, S., Buca, D., Sobolewski, R., Kováč, P., Guesten, R., Lüth, H., and KordošP.: Nitrogen implanted GaAs for ultrafast photodetectors and photomixers. In: ASDAM 2004. Piscataway: IEEE 2004. S. 53-56.

Bernat, J., Wolter, M., Javorka, P., Fox, A., Marso, M., and KordošP.: Performance of unpassivated AlGaN/GaN/SiC HEMTs after short-term electrical bias stress, Solid-State Electr. 48 (2004) 1825-1828.*

Bernát, J., Marso, M., Fox, A., KordošP., and Lüth, H.: DC and pulsed behaviour of undoped and doped AlGaN/GaN/SiC HEMTs before and after Si3N4 passivation. In: ASDAM 2004. Piscataway: IEEE 2004. S. 139-142.

Fox, A., Marso, M., Bernát, J., Javorka, P., and KordošP.: Influence of doping density on small- and large- signal characteristics of AlGaN/GaN/SiC HEMTs. In: ASDAM 2004. Piscataway: IEEE 2004. S. 147-150.

Marso, M., Bernát, J., Javorka, P., Fox, A., Wolter, M., and KordošP.: MSM varactor diodes based on AlGaN/GaN/SiC HEMT layer structures. In: ASDAM 2004. Piscataway: IEEE 2004. S. 151-154.

Moers, J., Trellenkamp, St., Marso, M., v.d.Hart, A., Mantl, S., Lüth, H., and KordošP.: Vertical double-gate MOSFETs. In: ASDAM 2004. Piscataway: IEEE 2004. S. 215-218.

Mikulics, M., Camara, I., Marso, M., v.d.Hart, A., Fox, A., Förster, A., Güsten, R., Lüth, H., and KordošP.: Generation of THz radiation by photomixing in low-temperature-grown MBE GaAs. In: ASDAM 2004. Piscataway: IEEE 2004. S. 231-234.

Gregušová, D., Novák, J., Hardtdegen, H., Šoltýs, J., Kostič, I., Greguš, J., and KordošP.: Smooth GaN recess wet photoelectrochemical etching. In: ASDAM 2004. Piscataway: IEEE 2004. S. 199-202.

2003

Marso, M., Wolter, M., Javorka, P., KordošP., and Lüth, H.: Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy, Applied Physics Lett. 82 (2003) 633-635.*

Zheng, X., Wu, S., Sobolewski, R., Adam, R., Mikulics, M., KordošP., and Siegel, M.:Electro-optic sampling system with a single-crystal 4-N,N-dimethylamino-4 ‚-N ‚-methyl-4-stilbazolium tosylate sensor, Applied Physics Lett. 82 (2003) 2383-2385.*

Javorka, P., Alam, A., Marso, M., Wolter, M., Kuzmik, J., Fox, A., Heuken, M., and KordošP.: Material and device issues of AlGaN/GaN HEMTs on silicon substrates, Microelectronics J. 34 (2003) 435-437.*

Trellenkamp, S., Moers, J., van der Hart, A., KordošP., and Lüth, H.: Patterning of 25-nm-wide silicon webs with an aspect ratio of 13, Microelectronic Engn. 67-8 (2003) 376-380.*

Javorka, P., Bernat, J., Fox, A., Marso, M., Lüth, H., and KordošP.: Influence of SiO2 and Si3N4 passivation on AlGaN/GaN/Si HEMT performance , Electronics Lett. 39(2003) 1155-1157.*

Goryll, M., Moers, J., Trellenkamp, S., Vescan, L., Marso, M., KordošP., and Lüth, H.: Wet low-temperature gate oxidation for nanoscale vertical field-effect transistors, Physica E 19 (2003) 18-22.*

Mikulics, M., Marso, M., KordošP., Stancek, S., Kovac, P., Zheng, X., Wu, S., and Sobolewski, R.: Ultrafast and highly sensitive photodetectors fabricated on high-energy nitrogen-implanted GaAs, Applied Physics Lett. 83 (2003) 1719-1721.*

Bernat, J., Javorka, P., Fox, A., Marso, M., Lüth, H., and KordošP.: Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs, Solid-State Electronics 47(2003) 2097-2103.*

Kuzmik, J., Pogany D., Gornik, E., Javorka, P., and KordošP.: Electrostatic discharge effects in AlGaN/GaN high-electron-mobility transistors, Applied Physics Lett. 83(2003) 4655-4657.*

Marso, M., Javorka, P., Dikme, Y., Kalisch, H., Bernat, J., Schafer, C., Schineller, B., von der Hart, A., Wolter, M., Fox, A., Jansen, R.H., Heuken, M., KordošP., and Lüth, H.: Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate, Physica Status Solidi A 200 (2003) 179-182.*

Bernat, J., Javorka, P., Marso, M., and KordošP.: Conductivity and Hall effect measurements on intentionally undoped and doped AlGaN/GaN heterostructures before and after passivation, Applied Physics Lett. 83 (2003) 5455-5457.*

Mikulics, M., Zheng, X.M., Adam, R., Sobolewski, R., and KordošP.: High-speed photoconductive switch based on low-temperature GaAs transferred on SiO2-Si substrate, IEEE Photonics Technology Lett. 15 (2003) 528-530.*

Zheng, X.M., Xu, Y., Sobolewski, R., Adam, R., Mikulics, M., Siegel, M., and KordošP.: Femtosecond response of a free-standing LT-GaAs photoconductive switch, Applied Optics 42 (2003) 1726-1731.*

2002

Javorka, P., Alam, A., Fox, A., Marso, M., Heuken, M., and KordošP.: AlGaN/GaN HEMTs on silicon substrates with f(T) of 32/20 GHz and f(max) of 27/22 GHz for 0.5/0.7 mu m gate length, Electronics Lett. 38 (2002) 288-289.*

Kalisch, H.,Dikme, Y., Gerstenbrandt, G., Alam, A., Szymakowski, A.,Klockenhoff, H., Rieckmann, C., Heuken, M., Jansen, R.H., Javorka, P., Marso, M.,Fox A., KordošP., and Lüth, H.: Growth and characterisation of AlGaN/GaN HEMT on silicon substrates, Physica Status Solidi A 194 (2002) 464-467.*

Škriniarová, J., van der Hart, A., Bochem, P., Fox, A., and KordošP.: Photoenhanced wet chemical etching of n(+)-doped GaN, Materials Sci Engn. B 91 (2002) Sp. Iss. SI 298-302.*

Kuzmik, J., Javorka, P., Alam, A., Marso, M., Heuken, M., and KordošP.: Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method, IEEE Trans. Electron Devices 49 (2002) 1496-1498.

Moers, J., Trellenkamp, S., Goryll, M., Marso, A., van der Hart, A., Hogg, S., Mantl, S., KordošP., and Lüth, H.: Top contacts for vertical double-gate MOSFETs, Microelectronic Engn. 64 (2002) 465-471.*

Adam, R., Mikulics, M., Förster, A., Schelten, J., Siegel, M., KordošP., Zheng, X., Wu, S., and Sobolewski, R.: Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices, Applied Physics Lett. 81 (2002) 3485-3487.*

Kuzmik, J., Javorka, P., Marso, M., and KordošP.: Annealing of Schottky contacts deposited on dry etched AlGaN/GaN, Semicond. Sci Techn. 17 (2002) L76-L78.*

Wolter, M., Javorka, P., Fox, A., Marso, M., Lüth, H., KordošP., Carius, R., Alam, A., and Heuken, M.: Photo-ionization spectroscopy of traps in AlGaN/GaN high-electron mobility transistors, J. Electronic Materials 31 (2002) 1321-1324.*

Javorka, P., Alam, A., Marso, M., Wolter, M., Fox, A., Heuken, M., and KordošP.: Fabrication and performance of AlGaN/GaN HEMTs on (111) Si substrates, Physica Status Solidi A 194 (2002) 472-475.*

Javorka, P., Alam, A., Wolter, M., Fox, A., Marso, M., Heuken, M., Lüth, H., and KordošP.: AlGaN/GaN HEMTs on (111) silicon substrates, IEEE Electron Device Lett. 23(2002) 4-6.*

Wolter, M., Javorka, P., Marso, M., Fox, A., Carius, R., Alam, A., Heuken, M., KordošP., and Lüth, H.: Photoionization spectroscopy of traps in doped and undoped AlGaN/GaN HEMTs, Phys. Stat. Solidi ( c) 0 (2002) 82-85. 2001

Kuzmík, J., Hasenöhrl, S., Haščík, Š., Mozolová, Ž., Lalinský, T., Breza, J., Vogrinčič, P., Škriniarová, J., Fox, A., and KordošP.: InGaAs/InGaP HEMTs: technological optimization and analytical modeling, Vacuum 61 (2001) 333-337.*

Lalinský, T., Škriniarová, J., Kuzmík, J., Hasenöhrl, S., Fox, A., Tomáška, M., Mozolová, Ž., KordošP., Kovačik, T., and Haščík, Š.: Technology and performance of 150 nm gate length InGaP/ InGaAs/GaAs pHEMT, Vacuum 61 (2001) 323-327.

Lalinský, T., Škriniarová, J., Kostič, I., Hart van der, A., Hrkút, P., Haščík, Š., Matay, L., Mozolová, Ž., and KordošP.: T-shaped gates for heterostructure field effect transistors, Vacuum 61 (2001) 329-332.

Škriniarová, J., Bochem, P., Fox, A., and KordošP.: Photoenhanced wet etching of gallium nitride in KOH-based solutions, J. Vacuum Sci Techn. B 19 (2001) 1721-1727.*

Javorka, P., Alam, A., Nastase, N., Marso, M., Hardtdegen, H., Heuken, M., Lüth, H., and KordošP.: AlGaN/GaN round-HEMTs on (111) silicon substrates, , Electronics Lett. 37 (2001) 1364-1366.*

Marso, M., Wolter, M., Javorka, P., Fox, A., and KordošP.: AlGaN/GaN varactor diode for integration in HEMT circuits, , Electronics Lett. 37 (2001) 1476-1478.*

Marso, M., Javorka, P., Alam, A., Wolter, M., Hardtdegen, H., Fox, A., Heuken, M., KordošP., and Lüth, H.: AlGaN/GaN HEMT optimization using the RoundHEMT technology, Physica Status Solidi A 188 (2001) 199-202.*

2000

Lüth, H., Thust, M., Steffen, A., KordošP., and Schöning, M.J.: Biochemical sensors with structured and porous silicon capacitors, Materials Sci Engn. B 69 (2000) Sp. Iss. SI 104-108.*

Schöning, M.J., Kurowski, A., Thust, M., KordošP., Schultze, J.W., and Lüth, H.: Capacitive microsensors for biochemical sensing based on porous silicon technology, Sensors & Actuators B 64 (2000) 59-64.*

KordošP., Javorka, P., Morvic, M., Betko, J., Van Hove, J.M., Wowchak, A.M., and Chow, P.P.: Conductivity and Hall-effect in highly resistive GaN layers, Applied Phys. Lett. 76 (2000) 3762-3764.*

Schutz, S., Schöning, M.J., Schroth, P., Malkoc, U., Weissbecker, B., KordošP., and Lüth, H.: Hummel HE An insect-based BioFET as a bioelectronic, Sensors & Actuators B 65 (2000) 291-295.*

Schöning, M.J., Malkoc, U., Thust, M., Steffen, A., KordošP., and Lüth, H.: Novel electrochemical sensors with structured and porous semiconductor/insulator capacitors, Sensors & Actuators B 65 (2000) 288-290.*

Poghossian, A., Thust, M., Schöning, M.J., Muller-Veggian, M., KordošP., and Lüth, H.: Cross-sensitivity of a capacitive penicillin sensor combined with a diffusion barrier, Sensors & Actuators B 68 (2000) 260-265.*

Schöning, M.J., Schmidt, C., Schubert, J., Zander, W., Mesters, S., KordošP., Lüth, H., Legin, A., Seleznev, B., and Vlasov, Y.G.: Thin film sensors on the basis of chalcogenide glass materials prepared by pulsed laser deposition technique,Sensors & Actuators B 68 (2000) 254-259.*

KordošP., Morvic, M., Betko, J., Van Hove, J.M., Wowchak, A.M., and Chow, P.P.: Conductivity and Hall effect characterization of highly resestive molecular-beam epitaxial GaN layers, J. Applied Physics 88 (2000) 5821-5826.*

Mourzina, Y., Schöning, M.J., Schubert, J., Zander, W., Legin, A.V., Vlasov, Y,G., KordošP., and Lüth, H.: A new thin-film Pb microsensor based on chalcogenide glasses, Sensors & Actuators B 71 (2000) 13-18.*

1999

Marso, M., Gersdorf, P., Fox, A., Förster, A., Hodel, U., Lambertini, R., and KordošP.: An InAlAs-InGaAs OPFET with responsivity above 200 A/W at 1.3-mu m wavelength, IEEE Photonics Techn. Lett. 11 (1999) 117-119.*

Moers, J., Klaes, D., Tonnesmann, A., Vescan, L., Wickenhauser, S., Marso, M., KordošP., and Lüth, H.: 19GHz vertical Si p-channel MOSFET, Electronics Lett. 35(1999) 239-240.*

Moers, J., Klaes, D., Tonnesmann, A., Vescan, L., Wickenhauser, S., Grabolla, T., Marso, M., KordošP., and Lüth, H.: Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth, Solid-State Electronics 43 (1999) 529-535.*

Schroth, P., Schöning, M.J., KordošP., Lüth, H., Schutz, S., Weissbecker, B., and Hummel, H.E.: Insect-based BioFETs with improved signal characteristics, Biosensors & Bioelectronics 14 (1999) 303-308.*

Schroth, P., Schöning, M.J., Schutz, S., Malkoc, U., Steffen, A., Marso, M., , Hummel HE., KordošP., and Lüth, H.: Coupling of insect antennae to field-effect transistors for biochemical sensing, Electrochimica Acta 44 (1999) 3821-3826.*

Thust, M., Schöning, M.J., Schroth, P., Malkoc, U., Dicker, C.I., Steffen, A., KordošP., and Lüth, H.: Enzyme immobilisation on planar and porous silicon substrates for biosensor applications, J.Molecular Catalysis B 7 (1999) 77-83.*

Betko, J., Morvic, M., Novák, J., Förster, A., and KordošP.: Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs, J. Applied Physics 86 (1999) 6243-6248.*

Schubert, J., Schöning, M.J., Schmidt, C., Siegert, M., Mesters, S., Zander, W., KordošP., Lüth, H., Legin, A., Mourzina, Y.G., Seleznev, B., and Vlasov, Y.G.: Chalcogenide-based thin film sensors prepared by pulsed laser deposition technique, Applied Physics A 69 (1999) S803-S805.*

1998

Darmo, J., Dubecký, F., KordošP. , and Förster, A.: Annealing effect on concentration of EL-6like deep-level state in low-temperature-grown molecular beam epitaxial GaAs, Applied Physics Lett. 72 (1998) 590.

Morvic, M., Betko, J., Novák, J., KordošP., and Förster, A.: On the hopping and band conductivity in molecular beam epitaxial low-temperature grown GaAs, Physica Status Solidi (b) 205 1998 125.

KordošP., Förster, A.Marso, M., and Ruders, F.: 550GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs, Electronics Letters 34(1998) 119-120.*

Marso, M., Horstmann, M., Hardtdegen, H., and KordošP.: Optoelectronic DC and RF behavior of InP/InGaAs based HEMTs, Solid-State Electronics 42 (1998) 197-200.*

KordošP., Marso, M., and Luysberg, M.: Conduction in nonstoichiometric molecular-beam epitaxial GaAs grown above the critical thickness, Applied Phys. Lett. 72 (1998) 1851-1853.*

Schöning, M.J., Schutz, S., Schroth, P., Weissbecker, B., Steffen, A., KordošP., Hummel, H.E., and Lüth, H.: A BioFET on the basis of intact insect antennae, Sensors Actuators B 47 (1998) 235.*

Schöning, M.J., Thust, M., Muller-Veggian, M., KordošP., and Lüth, H.: A novel silicon-based sensor array with capacitive EIS structures, Sensors Actuators B 47 (1998) 225-230.*

1997

Marso, M., Horstmann, M., Hardtdegen, H., KordošP., and Lüth, H.: Electrical behaviour of the InP/InGaAs based MSM-2DEG diode, Solid-State Electronics 41 (1997) 25-31.*

KordošP. , Marso, M., Förster, A., Darmo, J., Betko, J., and Nimtz, G.: Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs, Applied Physics Lett. 71 (1997) 1118.

Novák, J., Kučera, M., Morvic, M., Betko, J., Förster, A., and KordošP.: Characterization of low-temperature GaAs by galvanomagnetic and photoluminiscence measurements, Materials Sci & Engn. B 44 (1997) 341.

Schutz, S., Weissbecker, B., Hummel, H.E., Schöning, M.J., Riemer, A., KordošP., and Lüth, H.: Field effect transistor-insect antenna junction, Naturwissenschaften 84(1997) 86-88.*

Schimpf, K., Sommer, M., Horstmann, M., Hollfelder, M., van der Hart, A., Marso, M., KordošP., and Lüth, H.: 0.1-mu m T-gate Al-free InP/InGaAs/InP pHEMT’s for W-Band applications using a nitrogen carrier for LP-MOCVD growth, IEEE Electron Device Lett. 18 (1997) 144-146.*

Schöning, M.J., Thut, M., Schroth, P., Muller-Veggian, M., KordošP., and Lüth, H.: Silicon-based field-effect sensors for biochemical process contro, Abstracts of Papers of the American Chemical Soc. 213 (1997) 121-BIOT.*

Loo, R., Vescan, L., Behammer, D., Moers, J., Grabolla, T., Langen, W., Klaes, D., Zastrow, U., and KordošP.: Vertical Si p-MOS transistor selectively grown by low pressure chemical vapour deposition, Thin Solid Films 294 (1997) 267-270.*

Schöning, M.J., Ronkel, F., Crott, M., Thust, M., Schultze, J.W., KordošP., and Lüth, H.: Miniaturization of potentiometric sensors using porous silicon microtechnology, Electrochimica Acta 42 (1997) 3185-3193.*

1996

Betko, J., Morvic, M., Novák, J., Forster, A., KordošP.: Hall mobility analysis in low-teperature-grown molecular beam epitxial GaAs, Applied Physics Lett. 69 (1996) 2563.

Dubecký, F., Darmo, J., Hlaváč. S. , Benovič, M., Pikna, M., Pelfer. P. G., Förster, A. and KordošP.: Detection properties of LEC SI GaAs radiation detectors with the symmetrical contact configuration, Nuclear Instruments & Methods in Physics Research A 377 (1996) 475.

Betko, J., Morvic, M., Novák, J., Forster, A., and KordošP. : Hall mobility analysis in low-temperature-grown molecular beam epitaxial GaAs, Applied Physics Lett. 69(1996) 2563.

Thust, M., Schoning, M.J., Frohnhoff, S., ArensFischer, R., KordošP., and Lüth, H.: Porous silicon as a substrate material for potentiometric biosensors, Measurement Sci Techn. 7 (1996) 26-29.*

Thust, M., Schoning, M.J., Vetter, J., KordošP., and Lüth, H.: A long-term stable penicillin-sensitive potentiometric biosensor with enzyme immobilized by heterobifunctional cross-linking, Analytica Chimica Acta 323 (1996) 115-121.*

Horstmann, M., Schimpf, K., Marso, M., Fox, A., and KordošP.:16GHz bandwidth MSM photodetector and 45/85GHz f(T)/f(max) HEMT prepared on an identical InGaAs/InP layer structure, Electronics Letters 32 (1996) 763-764.*

Horstmann, M., Marso, M., Muttersbach. J., Schimpf, K., and KordošP.: Responsivity enhancement of InGaAs based MSM photodetectors using 2DEG layer sequence and semitransparent electrodes, Electronics Letters 32 (1996) 1613-1615.*

Langen, W., Vescan, L., Loo, R., Lüth, H., and KordošP.: Vertical 100 nm Si-P channel JFET grown by selective epitaxy, Applied Surface Sci 102 (1996) 252-254.*

Schimpf, K., Horstmann, M., Hardtdegen, H., Marso, M., and KordošP.: Thermionic field emission in p-barrier enhanced InP/InGaAs/InP HEMTs, Electronics Letters 32(1996) 2132-2134.*

Manciu, M., KordošP., Hartdegen, H., and Manaila, R.: Structural parameters of multilayers as deduced from X-ray specular reflectivity: Effect of statistical thickness fluctuations, J. Applied Crystallography 29 (1996) 632-637.*

Schoning, M.J., Tsarouchas, D., Beckers, L., Schubert, J., Zander, W., KordošP., and Lüth, H.: A highly long-term stable silicon-based pH sensor fabricated by pulsed laser deposition technique, Sensors Actuators B 35 (1996) 228-233.*

Morvic, M., Betko, J., Novák, J., Förster, A., and KordošP. : Transport properties of MBE GaAs layers grown at 4200C. In: HEAD 95. 2nd Int. Workshop on Heterostructure Epitaxy and Devices. Eds. J. Novák and A. Schlachetzki. NATO ASI Series 3, High Technology, Vol. 11. Dordrecht: Kluwer Academic Publ. 1996. P. 197-200.

Darmo J., Dubecký, F., KordošP., Forster, A.: Annealing characteristics of native defects in low-temperature-grown MBE GaAs. In: The 9th Conference on Semiconducting and Insulating Materials, Toulouse 1996. Ed. Ch.Fontaine. IEEE Publ. 1996. P. 67.

1995

Marso, M., Schimpf, K., Fox, A., Vanderhart, A., Hardtdegen, H., Hollfelder, M., KordošP., and Lüth, H.: Novel HEMT layout – the roundhemt, Electronics Letters 31 (1995) 589-591.*

KordošP., Betko, J., Förster, A., Kuklovský, S., Dieker, Ch., Rüders, F.: Electrical and structural chatacterization of MBE grown at temperatures between 200 and 6000C, Compound Semicond. 1994, IoP Conf. Ser. No. 141 (1995) 295.

Langen, W., Hardtdegen, H., Lüth, H., and KordošP.: Selectively grown vertical sub-100 nm dual-gate GaAs-FETS, Compound Semicond. 1994, IoP Conf. Ser. No. 141(1995) 183.*

Schoning, M.J., Sauke, M., Steffen, A., Marso, M., KordošP., Lüth, H., Kauffmann, F., Erbach, R., and Hoffmann, B.: Ion-sensitive field-effect transistors with ultrathin langmuir-blodgett membranes, Sensors & Actuators B 27 (1995) 325-328.*

Horstmann, M., Marso, M., Fox, A., Ruders, F., Hollfelder, M., Hardtdegen, H., KordošP., and Lüth, H.: InP/InGaAs photodetector based on a high-electron-mobility transistor layer structure – its response at 1.3 mu-m wavelength, Applied Physics Lett. 67 (1995) 106.*

KordošP., Förster, A., Betko, J., Morvic, M., and Novák, J.: Semi-insulating GaAs layers grown by molecular-beam epitaxy, Applied Phys. Lett. 67 (1995) 983.

1994

Betko, J., KordošP. , Kuklovský, S., Förster, A., Gregušová, D., Lüth, H.: Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature, Materials Sci Engn. B 28 (1994) 147.

Darmo, J., Dubecký, F., KordošP., Förster, A., and Lüth, H.: Electrical properties and deep-level states in MBE GaAs layer grown at 2500C, Materials Sci Engn. B 28(1994) 393.

KordošP., Betko, J., Förster, A., Kuklovský, S., Dieker, Ch., Rüders, F.: Electrical and structural chatacterization of MBE grown at temperatures between 200 and 6000C. In: Proc. of the 21st Int. Symposium on Compound Semicond., San Diego 1994. P. 110.

1993

Dubecký, F., Novák, J., and KordošP.: An efficient and low cost optical excitation system: Application to deep-level spectroscopy, Measurement Sci. Techn. 4 (1993) 538.

Dubecký, F., Novák, J., and KordošP.: An efficient and low cost optical excitation system: application to deep-level spectroscopy, Engn. Optics 1 (1993) 363.

Dubecký, F., Darmo, J., Darviras, M., Förster, A., KordošP. , and Lüth, H.: Investigation of deep-level states in bulk and low- temperature MBE semi-insulating GaAs by admitance transient spectroscopy. In: Proc. 7th Conf. on III-V Semi-Insulating Materials. Ed.: C.J.Miner. Bristol, IOP Publ. 1993. P. 265.

Darmo, J., Dubecký, F., Lalinský, T., KordošP., Förster, A., Lüth, H.: Influence of annealing on deep-level defect states in LT MBE GaAs. In: Proc. 7th Conf. on III-V Semi-Insulating Materials. Ed.:C.J.Miner. Bristol, IOP Publ. 1993.

1992

KordošP., Marso, M., Meyer, R., and Lüth, H.: Schottky barrier height enhancement on n-InGaAs, J. Appl. Physics 72 (1992) 2347.

KordošP., Marso, M., Meyer, R., and Lüth, H.: Schottky contacts on n-In0.53Ga0.47As with enhanced barriers by counter-doped interfacial layers, IEEE Trans. Electron Devices 39 (1992) 1970-1972.*

KordošP., Marso, M., Fox, A., Hollfelder, M., and Lüth, H.: n-InGaAs Schottky diode with current transport along 2-deg channel, Electronics Letters 28 (1992) 1689-1690.*

KordošP. : Influence of thin surface interlayers on the properties of metal-semiconductor interfaces. In: Proc. of the Int. Workshop : Characterization of Semiconductor Substrates and Structures. Piešťany, ÚFE SAS 1992. P. 33.

KordošP., Marso, M., Meyer, R., Lüth, H.: Enhanced Schottky barriers on n-In0.53Ga0.47As using p InGaAs, GaAs, InP and InGaP surface layers. In: Proc. 4th Int. Conf. on InP and Related Materials. Newport, 1992. P. 230.

1991

Kourkoutas, C.D., Novák, J., Kuliffayová, M., Papaioannou, G.J., KordošP. and Ioannou-Sougleridis, V.: Transport properties of praseodymium doped p-type In0.53Ga0.47As layers, Solid State Comm. 78 (1991) 543.

KordošP. , Novák, J., Kayser, O., and Heime, K.: Schottky barrier enhancement of /n/ GaInAs with GaInP layer, Physica Status Solidi A 127 (1991) K25.

Šouc, J., Machajdík, D., Šmatko, V., Štrbík, V., Fröhlich, K., Hríb, Š., Štefánik, V., KordošP. and Ivan, J.: Preparation and properties of Ba-deficient superconducting thin Y-Ba-Cu-O films, J. Crystal Growth 107 (1991) 710.

KordošP., Marso, M., Meyer, R., and Lüth, H.: Barrier height enhancement of (n) In0.53Ga0.47As Schottky diodes grown by MO CVD technique, Electronics Letters 27(1991) 1759.

1990

Malacký, L., KordošP., Novák, J.: Schottky barrier contacts on (p)-GaInAs, Solid State Electronics 33 (1990) 273.

1989

Novák, J., Kuliffayová, M., Morvic, M., and KordošP.: Growth and properties of low-doped In0.53Ga0.47As LPE layers using rare earth oxides, J. Crystal Growth 96 (1989) 645.

1987

Malacký, L., Novák, J., Morvic, M., and KordošP. : Study of dark current in Ga1-xInxAs/GaAs diodes, Crystal Prop. and Preparation 12 (1987) 303.

Šafránková, J. and KordošP. : Photocurrent multiplicaion in GaAs Schottky photodiodes, Solid State Electronics 30 (1987) 93.

Novák, J., Malacký, L., Morvic, M., and KordošP.: Dependence of InGaAs photodiode characteristics on the composition of the ternary, Crystal Prop. and Preparation 12(1987) 307.

Šafránková, J. and KordošP. : Some properties of GaAs Schottky barrier photodetectors for 0,82μ wavelength applications. In: Gallium Arsenide. Proc. 2nd Conf. on Physics and Technology of GaAs and other III-V Semiconductors. Ed. E.Lendway. Aedermannsdorf, Trans. Techn. Publ. 1987. P. 147.

KordošP. : Liquid phase epitaxial growth for solar applications. In: Technical Notes of the 2nd International School „Solar Cell Materials and Applications“. Káhira, AS Res. and Techn. 1987. P. 175.

1986

KordošP. a Morvic, M.: Fotodiody dlja volokonn-optičeskich system 1,3mkm, Zarubežnaja elektr. 11 (1986) 80.

Konakova, R.V., KordošP. , Tchorik, J.A., Fajnberg, V.I., Štofaník, F.: Prognozirovanije nadežnosti poluprovodnikovych lavinnych diodov. Kyjev, Naukova Dumka 1986. 187s.

Kolchanova, N.M., Mikhailova, M.P., Reschikov, M.A., Morvic, M., Dubecký, F., and KordošP. : High-sensitive GaAs photodetector in the range of 0.6+1.6.μ . In: 12th Int. Symposium of the Technical Committee on Photon-Detectors. Ed.: J. Schanda. Budapešť, OMIKK- TECHNOINFORM 1986. P. 168.

Šafránková, J. a KordošP.: Responsivity analysis of GaAs Schottky-barrier photodiode. In: 12th Int. Symposium of the Technical Committee on Photon-Detectors. Ed.: J. Schanda. Budapešť, OMIKK- TECHNOINFORM 1986. P. 221.

1985

Lalinský, T., KordošP., Kovács, B., Mojzes, I., Racz, A., and Szentpali, B.: Optimization of heat treatment for forming AuGe based contacts to n-GaAs, Phys. Status Solidi 88 (1985) K87.

1984

Kúdela, R., Benč, V., Morvic, M., Novák, J., and KordošP. : Photodiodes on InGaAs/InP and InGaAsP/InP structures. In: Photovoltaic and Optpelectronic Processes. Bukurest 1984. P. 113.

KordošP. : High-speed photodetectors. In: Photovoltaic and Optoelectronic Processes. Bukurest 1984. P. 78.

Lalinský, T., Chromik, Š., and KordošP.: Technological optimization and reliability of AuGe based ohmic contacts to n-GaAs. In: Physics and Technology of GaAs and other III-V Semiconductors. Reinhardsbrum, 1984.

1983

Konakova, R.V., Tchorik, Ju.A., Zaitsevskij, I.L., KordošP., Morvic, M., and Červenák, J.: The influence of stress on the fine structure of Schottky diode V-A characteristics in the breakdown region, Physica Status Solidi (a) 77 (1983) K125.

Konakova, R.V., Tchorik, Ju.A., Zaitsevskij, I.L., Benč, V., KordošP., Morvic, M., and Červenák, J.: Electrical characteristics of GaAs LPE Schottky diodes, Crystal Research & Techn. 18 (1983) 1451-6.

Tchorik, Ju.A., Konakova, R.V., Jevstignejev, A.M., Krasiko, A.N., KordošP., Morvic, M. a Červenák, J.: Vlijanije ionizurujuščej radiacii na spektry poverchnostno-bariernovo elektrootrayenija AlxGa1-xAs, Poverchnost (1983) 12.

Dubecký, F., Novák, J., and KordošP. : Observation of deep traps in LPE(P)AlGaAs-(N)GaAs heterojunctions for avalanche photodiode applications. In: 4th Int. Conf. Deep Level Impurities in Semicond. Eger 1983. P. 90.

1982

Novák, J., Morvic, M., and KordošP.: High gain (p) AlGaAs-(n) GaAs heterojunction avalanele photodiodes, Solid State Electr. 25 (1982) 82.

KordošP., Schumbera, P., Heyen, M., and Balk, P.: Vapor growth of GaxIn1-xAs using an In/Ga alloy source, IoP Conf. Series (1982) 131-136.

1981

Konakova, R.V., Tchorik, Y.A., Zajcevskij, I.L., KordošP. , Morvic, M., and Červenák, J.: Avalanche breakdoron pecularities of AlxGa1-xAs IMPATT diodes, Phys. Status Solidi A 63 (1981) K163.

KordošP. , Schumbera, A.P., Heyen, M., Balk. P. : Vapour growth of Ga1-xInxAs using on In/Ge alloy source. In: Int. Symp. GaAs. Oiso, 1981. P. 231.

1980

KordošP. and Pearson, G.: Grown junction GaAs solar cells with a thin graded band-gap AlxGa1-xAs surface layer, Solid State Electr. 23 (1980) 399.

1979

KordošP., Pearson, G.L., and Panish, M.B.: Isothermal LPE growth of thin graded gap AlxGa1-xAs layers, J. Applied Phys. 50 (1979) 6902. B

KordošP. , Powell, R.H., Spicer, W.E., Pearson, G.L., and Panish, M.B.: Growth and properties of graded band-gap AlxGa1-xAs layers, Applied Physics Lett. 34 (1979) 366.

1975

KordošP. , Janšák, L., and Benč, V.: Preparation and properties of doped epitaxial GaAs, Solid State Electr. 18 (1975) 223.

Janšák, L., KordošP., and Blahová, M.: Silicon and gallium arsenide diodes for low-temperature thermometry, Inst. Phys. Conf. Ser. No. 26 (1975) 65.

Janšák, L. and KordošP. : Preparation and properties of GaAs p-n junction in the wide temperature range, Elektrotechn. čas. 26 (1975) 312.

1974

Janšák, L. and KordošP. : Wide-range resistence thermometer made from Mn-doped epitaxial GaAs, Cryogenics 14 (1974) 467.

Janšák, L. and KordošP. : Thermometric diode made from epitaxial GaAs, Czechosl. J. Phys. A 24 (1974) 364.

1973

KordošP.: Epitaxial efficiency coefficient at liquid phase epitaxy, J. Crystal Growth 20 (1973) 307.

KordošP., Janšák, L., and Benč, V.: Magnetic field and low temperature sensor made from epitaxial GaAs, Cryogenics 13 (1973) 312.

1970

KordošP. : Diffusion and solubility of thermally induced acceptors in indium antimonide, Fyzikálny čas. 20 (1970) 220.

1969

KordošP.: Deep acceptor level in heat treated indium antimonide, Phys. Status Solidi 33 (1969) K129.

1968

Měřínsky, K., Betko, J., Morvic, M., and KordošP.: Über dieelektrischen eigenschaften von Ge-Magnetodioden, Solid State Electr. 11 (1968) 187.

1967

KordošP.: Heat treatment of InSb crystals with different dislocation densities, Phys. Status Solidi 22 (1967) K59.