doc. RNDr. Edmund DOBROČKA, CSc.

  • 2019

Dobročka, E.:  X-ray diffraction analysis of epitaxial layers with depth-dependent composition, Mater. Struct. 26 (2019) 148-150.

Branická, E., Ušáková, M., Ušák, E., Šoka, M., and Dobročka, E.: Effect of Eu substitution on magnetic behavior of spinel nickel ferrites, AIP Conf. Proc. 2131 (2019) 020003.

Zajkoska, S.M., Dobročka, E., Hansal, S., Mann, R., Hansal, W.E.G., and Kautek, W.: Tartrate-based electrolyte for electrodeposition of Fe–Sn alloys, Coatings 9 (2019) 313.

Sojková, M., Šiffalovič, P., Babchenko, O., Vanko, G., Dobročka, E., Hagara, J., Mrkývková, N., Majková, E.,  Ižák, T., Kromka, A., and Hulman, M.: Carbide-free one-zone sulfurization method grows thin MoS2 layers on polycrystalline CVD diamond, Sci Rep. 9 (2019) 2001.

Chauhan, P., Hasenöhrl, S., Dobročka, E., Chauvat, M.-P., Minj, A., Gucmann, F., Vančo, Ľ., Kováč, J.jr., Kret, S., Ruterana, P., Kuball, M., Šiffalovič, P., and Kuzmík, J.: Evidence of relationship between strain and In-incorporation: growth of N-polar In-rich InAlN buffer layer by OMCVD, J. Applied Phys. 125 (2019) 105304.

Šebesta, M., Kolenčík, M., Urík, M., Bujdoš, M., Vávra, I., Dobročka, E., Smilek, J., Kalina, M., Diviš, P., Pavúk, M., Miglierini, M., Kratošová, G., and Matúš, P.: Increased colloidal stability and decreased solubility-sol-gel synthesis of zinc oxide nanoparticles with humanic acids, J. Nanosci Nanotechnol. 19 (2019) 3024-3030.

Chauhan, P., Hasenöhrl, S., Dobročka, E., Vančo Ľ., Stoklas, R., Kováč, J., Šiffalovič, P., and Kuzmík, J.: Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer, Applied Surface Sci 470 (2019) 1-7.

Hasenöhrl, S., Chauhan, P., Dobročka, E., Stoklas, R., Vančo, Ľ., Veselý, M., Bouazzaoui, F., Chauvat, M.-P., Reterana, P., and Kuzmík, J.: Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures, Applied Phys. Express 12 (2019) 014001.

Kučera, M., Adikimenakis, A., Dobročka, E., Kúdela, R., Ťapajna, M., Laurenčíková, A., Georgakilas, A., and Kuzmík, J.: Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates, Thin Solid Films 672 (2019) 114-119.

  • 2018

Dobročka, E., Hasenöhrl, S., Chauhan, P., and Kuzmík, J.: Non-conventional scans in high-resolution X-ray diffraction analysis of epitaxial systems, Applied Surface Sci 461 (2018) 23-32.

Kúdela, R., Šoltýs, J., Kučera, M., Stoklas, R., Gucmann, F., Blaho, J., Mičušík, M., Pohorelec, O., Gregor, M., Brytavskyi, I.V., Dobročka, E., and Gregušová, D.: Technology and application of in-situ AlOx layers on III-V semiconductors, Applied Surface Sci 461 (2018) 33-38.

Chromik, Š., Španková, M., Talacko, M., Dobročka, E., and Lalinský, T.: Some peculiarities at preparation of Bi4Ti3O12 films for bolometric applications, Applied Surface Sci 461 (2018) 39-43.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Dobročka, E., Kováč, J.jr., Kováč, J., Ďurišová, J., and Pudiš, D.: Nanorods and nanocones for advanced sensor applications, Applied Surface Sci 461 (2018) 61-65.

Neilinger, P., Ščepka, T., Mruczkiewicz, M., Dérer, J., Manca, D., Dobročka, E., Samardak, A.S., Grajcar, M., and Cambel, V.: Ferromagnetic resonance study of sputtered Pt/Co/Pt multilayers, Applied Surface Sci 461 (2018) 202-205.

Rosová, A., Hušek, I., Kulich, M., Melišek, T., Kováč, P., Dobročka, E., Kopera, L., Scheiter, J., and Haessler, W.: Microstructure of undoped and C-doped MgB2 wires prepared by an internal magnesium diffusion technique using different B powders, J. Alloys Comp. 764 (2018) 437e445.

Ušák, E., Ušáková, M., Dosoudil, R., Šoka, M., and Dobročka, E.: Influence of iron substitution by selected rare-earth ions on the properties of NiZn ferrite fillers and PVC magneto-polymer composites, AIP Adv. 8 (2018) 047805.

Zápražný, Z., Korytár, D., Jergel, M., Halahovets, Yu., Ferrari, C., Frigeri, C., Dobročka, E., Keckes, J., and Hagara, J.:  Towards x-ray crystal channel-cut monochromators prepared by nano-machining technique, Mater. Struct. 25 (2018) 75-78.(ASFEU 26220220170, APVV 14-0745, VEGA 2/0092/18, XOPTICS)

  • 2017
Druga, J., Kašiarová, M., Dobročka, E., Zemanová, M., : Corrosion and tribological properties of nanocrystalline pulse electrodeposited Ni-W alloy coatings,. Trans. IMF 95 (2017) 39-45.

Dobročka, E.: Evaluation of threading dislocation density in III-nitride epitaxial layers, Mater. Struct. 24 (2017) 27-29.

Zápražný, Z., Korytár, D., Halahovets, Yu., Jergel, M., Ferrari, C., Hagara, J., and Dobročka, E.:  Diffraction surfaces in x-ray crystal monochromators prepared by nano-machining technique, Mater. Struct. 24 (2017) 25-26.

Soták, T., Hronec, M., Gál, M., Dobročka, E., and Škriniarová, J.: Aqueous-phase oxidation of furfural to mateic acid catalyzed by copper phosphate catalysts, Catalysis Letters 147 (2017) 2714-2723.

Kuzmík, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M., Kúdela, R., Androulidaki, M., Pogany, D., Georgakilas, A., : Current conduction mechanism and electrical break-down in InN grown on GaN. Applied Phys. Lett. 110 (2017) 232103. (APVV 15-0031). (CENTE II).

 

Brunner, B., Rosová, A., Kováč, P., Reissner, M., Dobročka, E., : Effect of Dy2O3 doping on phase formation and properties of MgB2 wires made by the modified internal magnesium diffusion process. Supercond. Sci Technol. 30 (2017) 025004. (APVV 14-0522). (VEGA 2/0129/16). (CENTE).

Lalinský, T., Vanko, G., Dobročka, E., Osvald, J., Babchenko, O., Dzuba, J., Veselý, M., Vančo, Ľ., Vogrinčič, P., and Vincze, A.: Ir/Al multilayer gates for high temperature operated AlGaN/GaN HEMTs, Phys. Status Solidi A 214 (2017) 1700691.

Laurenčíková, A., Novotný, I., Hasenöhrl, S., Dérer, J., Eliáš, P., Kováč, J., Kováč, J., Dobročka, E., Novák, J., : Formation of a compact Ga-doped ZnO layer over vertical free-standing GaP nanowires. Applied Surface Sci 395 (2017) 162-165. (APVV 0395-12). (APVV 14-0297). (VEGA 2/0098/13). (CENTE).

 

Brytavskyi, I., Gregušová, D., Ťapajna, M., Stoklas, R., Blaho, M., Seifertová, A., Hasenöhrl, S., Dobročka, E., Kuzmík, J., : Hafnium oxide as a promising material for gate isolation in GaN-based MOS HFETs In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 207-210.. (VEGA 2/0109/17). (VEGA 2/0104/17).

 

Chromik, Š., Sojková, M., Vretenár, V., Rosová, A., Dobročka, E., Hulman, M., : Influence of GaN/AlGaN/GaN (0001) and Si (100) substrates on structural properties of extremely thin MoS2 films grown by pulsed laser deposition. Applied Surface Sci 395 (2017) 232-236. (APVV-0494-11). (APVV LPP-0078-07). (VEGA 2/0120/14). (VEGA 2/0173/13). (VEGA 2/0178/15). (CENTE). (ASFEU ITMS 26240220084).

 

Ťapajna, M., Válik, L., Gucmann, F., Gregušová, D., Fröhlich, K., Haščík, Š., Dobročka, E., Tóth, L., Pecz, B., Kuzmík, J., : Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density. J. Vacuum Sci Technol. B 35 (2017) 01A107. (SAFEMOST). (VEGA 2/0138/14). (CENTE).

 

Sojková, M., Chromik, Š., Rosová, A., Dobročka, E., Hutár, P., Machajdík, D., Kobzev, A., Hulman, M., : MoS2 thin films prepared by sulfurization Proc. SPIE 10354 (2017) 103541K-1. (CENTE II). (APVV 15-0693). (VEGA 2/0149/17). (VEGA 2/0178/15).

 

Gucmann, F., Kúdela, R., Rosová, A., Dobročka, E., Micusik, M., Gregušová, D., : Optimization of UV-assisted wet oxidation of GaAs,. J. Vacuum Sci Technol. B 35 (2017) 01A116. (VEGA 2/0105/13). (APVV 15-0243). (CENTE II).

 

Kořenková, L., Šebesta, M., Urík, M., Kolenčík, M., Kratošová, G., Bujdoš, M., Vávra, I., Dobročka, E., :Physiological response of culture media-grown barley (Hordeum vulgare L.) to titanium oxide nanoparticles,. Acta Agricult. Scand. B 67 (2017) 285-291.

 

Brunner, B., Kováč, P., Rosová, A., Reissner, M., Dobročka, E., : Properties of MgB2 wires doped with BaZrO3 nanopowder made by a modified internal magnesium diffusion process. Supercond. Sci Technol. 30 (2017) 115003. (APVV 14-0522). (CENTE II). (VEGA 2/0129/16).

 

Novák, P., Dobročka, E., : Residual stress and optimization of lattice parameters in strongly textured ZnO thin films In: Proc. 23th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2017). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2017. ISBN 978-80-227-4699-1. P. 276-279.

 

Dobročka, E., Novák, P., Búc, D., Harmatha, L., Murín, J., : X-ray diffraction analysis of residual stresses in textured ZnO thin films. Applied Surface Sci 395 (2017) 16-23. (CENTE). (VEGA 2/0138/14).

Kováč, J., Florovič, M., Vincze, A., Dobročka, E., Novotný, I., Mikolášek, M., and Škriniarová, J.: Fabrication and characterization of Si/SiO2/TiO2 /ZnO heterostructures from sputtered and oxidized Ti-film, J. Electr. Engn. 68 (2017) 58-61.

 

  • 2016
Hronec, M., Fulajtárová, K., Vávra, I., Soták, T., Dobročka, E., Micusik, M., : Carbon supported Pd-Cu catalysts for highly selective rearrangement of furfural to cyclopentanone. Applied Catal. B 181 (2016) 210-219.

 

Sojková, M., Štrbik, V., Nurgaliev, T., Chromik, Š., Dobročka, E., Španková, M., Blagoev, B., Gál, N., :Fabrication of hybrid thin film structures from HTS and CMR materials. J. Phys.:Conf. Ser. 700 (2016) 012022. (APVV-0494-11). (APVV LPP-0078-07). (VEGA 2/0120/14). (VEGA 2/0173/13). (CENTE II).

 

Kulich, M., Kováč, P., Hain, M., Rosová, A., Dobročka, E., : High density and connectivity of a MgB2 filament made using the internal magnesium diffusion technique. Supercond. Sci Technol. 29 (2016) 035004.(APVV 14-0522). (VEGA 2/0126/15). (CENTE).

 

Španková, M., Štrbik, V., Dobročka, E., Chromik, Š., Sojková, M., Zheng, D., Li, J., : Characterization of epitaxial LSMO thin films with high Curie temperature prepared on different substrates. Vacuum 126 (2016) 24-28. (APVV-0494-11). (APVV LPP-0078-07). (APVV 14-0613). (VEGA 2/0120/14). (VEGA 2/0173/13). (CENTE).

 

Zemanová, M., Druga, J., Szúnyogh, J., Dobročka, E., : Ni-W alloys for hydrogen evolution. Mater. Sci Forum 844 (2016) 167-171.

 

Soták, T., Hronec, M., Vávra, I., Dobročka, E., : Sputtering processed tungsten catalysts for aqueous phase reforming of cellulose. Inter. J. Hydrogen Energy 41 (2016) 21936-21944. (VEGA 2 /0129/13).
  • 2015
Fulajtárová, K., Soták, T., Hronec, M., Vávra, I., Dobročka, E., Omastová, M., : Aqueous phase hydrogenation of furfural to furfural alcohol over Pd-Cu catalysts. Applied Catal. A 502 (2015) 78-85.

 

Zápražný, Z., Korytár, D., Jergel, M., Šiffalovič, P., Dobročka, E., Vagovič, P., Ferrari, C., Mikulík, P., Demydenko, M., Mikloška, M., : Calculations and surface quality measurements of high-asymmetry angle x-ray crystal monochromators for advanced x-ray imaging and metrological applications. Optical Engn. 54 (2015) 035101. (ITMS 26220220170). (APVV 0308-11). (COST MP1203). (COST MP1207).

 

Novák, P., Dobročka, E., Slugeň, V., Gokhman, A., : Effect of irradiation on the structural propeties of ironchromium alloys investigated by GIXRD In: Proc. 21th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2015). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2015. ISBN 978-80-227-4373-0. P. 277-281.

 

Šustek, M., Horváth, B., Vávra, I., Gál, M., Dobročka, E., Hronec, M., : Effects of structures of molybdenum catalysts on selectivity in gas-phase propylene oxidation. Chinese J. Catal. 36 (2015) 1900-1909. (VEGA 2 /0129/13).

 

Kuzmík, J., Haščík, Š., Kučera, M., Kúdela, R., Dobročka, E., Adikimenakis, A., Mičušík, M., Gregor, M., Plecenik, A., Georgakilas, A., : Elimination of surface band bending on N-polar InN with thin GaN capping,. Applied Phys. Lett. 107 (2015) 191605. (APVV 0367-11). (VEGA 2/0138/14). (CENTE).

 

Gucmann, F., Kúdela, R., Dobročka, E., Mičušík, M., Rosová, A., Novák, J., Gregušová, D., : III-As heterostructure field-effect transistors with recessed ex-situ gate oxide In: 18. Škola vákuovej techniky: Nanosvet s vákuom. Bratislava: SVS, 2015. ISBN 978-80-971179-6-2. S. 27-30.. (VEGA 2/0105/13). (CENTE). (VEGA 2/0098/13).

 

Gucmann, F., Kúdela, R., Kordoš, P., Dobročka, E., Gaži, Š., Dérer, J., Liday, J., Vogrinčič, P., Gregušová, D., : III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O2 plasma-oxidized GaAs cap. J. Vacuum Sci Technol. B 33 (2015) 01A111. (VEGA 2/0105/13). (VEGA 2/0098/13). (CENTE).

 

Oriňaková, R., Oriňak, A., Kupková, M., Hrubovčáková, M., Markušová-Bučková, L., Giretová, M., Medvecký, Ľ., Dobročka, E., Petruš, O., Kaľavský, F., : In vitro degradation and cytotoxicity evaluation of iron biomaterials with hydroxyapatite film. Inter. J. Electrochem. Sci 10 (2015) 8158-8174.

 

Brndiarová, J., Fröhlich, K., Hulman, M., Rosová, A., Dobročka, E., Kahro, T., Aarik, J., : Integration of atomic layer deposited Al2O3 dielectrics with graphene In: Proc. 21th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2015). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2015. ISBN 978-80-227-4373-0. P. 169-174. (VEGA 2/0138/14). (ASFEU ITMS 26240220088).

 

Kováč, P., Hušek, I., Rosová, A., Kulich, M., Melišek, T., Kopera, Ľ., Dobročka, E., : Interface MgB2 layers made by magnesium diffusion into boron. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 84.

 

Novák, P., Gokhman, A., Dobročka, E., Bokor, J., Pecko, S., : Investigation of helium implanted Fe-Cr alloys by means of x-ray diffraction and positron annihilation spectroscopy,. J. Electr. Engn. 66 (2015) 334-338.

 

Lalinský, T., Vanko, G., Dobročka, E., Vincze, A., Dzuba, J., Babchenko, O., : Ir/Al multilayer systems for high temperature stable gates of AlGaN/GaN HEMTs. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 91-92.. (VEGA 1/0839/12). (APVV 0455-12). (SASPRO 0068/01/01).

 

Šoka, M., Ušáková, M., Dosoudil, R., Ušák, E., Dobročka, E., : Magnetic and structural properties of nickel zinc ferrites doped with yttrium. IEEE Trans. Magn. 51 (2015) 2000504.. (VEGA 2/0062/13).

 

Jakubisová, E., Višnovský, Š., Široký, P., Hrabovský, D., Pištora, J., Vávra, I., Dobročka, E., Krišťan, P., Štěpánková, H., Harward, I., Celinski, Z., : Magneto-optical studies of BaFe12O19 films grown by metallo-organic decomposition. Optical Mater. Express 5 (2015) 1323-1330.

 

Dobročka, E., Novák, P., Búc, D., : Measuring of residual stresses in strongly textured thin films Mater. Struct. 22 (2015) 171-172.

 

Rosová, A., Kováč, P., Hušek, I., Brunner, B., Dobročka, E., : Microstructure of MgB2 superconducting wire prepared by internal magnesium diffusion and in-situ powder-in-tube processes – Secondary phase intergrain nanolayers as an oxygen content indicator. Physica C 516 (2015) 1-9. (VEGA 2-0121-12).

 

Rosová, A., Hušek, I., Kováč, P., Dobročka, E., Melišek, T., : Microstructure of MgB2 superconducting wire prepared by internal magnesium diffusion process. J. Alloys Comp. 619 (2015) 726-732. (APVV 0495-10). (VEGA 2-0121-12).

 

Sojková, M., Hulman, M., Chromik, Š., Micusik, M., Dobročka, E., Gaži, Š., Španková, M., : MoS2 thin film fabrication. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 129.. (APVV-0494-11). (APVV LPP-0078-07). (VEGA 2/0120/14). (VEGA 2/0173/13). (CENTE II).

 

Filo, J., Mišicák, R., Cigáň, M., Weis, M., Jakabovič, J., Gmucová, K., Pavúk, M., Dobročka, E., Putala, M., :Oligothiophenes with the naphthalene core for organic thin-film transistors: variation in positions of bithiophenyl attachment to the naphthalene. Synthetic Metals 202 (2015) 73-81.

 

Sojková, M., Štrbik, V., Chromik, Š., Liday, J., Vogrinčič, P., Dobročka, E., Španková, M., Talacko, M., Gaži, Š., : Stable fluoride based sputtering target for Tl-based cuprate superconducting thin film fabrication. Vacuum 119 (2015) 250-255. (APVV-0494-11). (APVV LPP-0078-07). (VEGA 2/0120/14). (VEGA 2/0173/13). (CENTE II).

 

Španková, M., Štrbik, V., Dobročka, E., Chromik, Š., Sojková, M., : Structural characterization of epitaxial LSMO thin films with high Curie temperature grown on LSAT substrates. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 154-155.. (APVV-0494-11). (APVV 14-0613). (VEGA 2/0120/14). (VEGA 2/0173/13).

 

Španková, M., Rosová, A., Dobročka, E., Chromik, Š., Vávra, I., Štrbik, V., Machajdík, D., Kobzev, A., Sojková, M., : Structural properties of epitaxial La0.67Sr0.33MnO3 films with increased temperature of metal-insulator transition grown on MgO substrates. Thin Solid Films 583 (2015) 19-24. (APVV-0494-11). (APVV LPP-0078-07). (VEGA 2/0120/14). (CENTE II).

 

Štrbik, V., Beňačka, Š., Gaži, Š., Španková, M., Šmatko, V., Chromik, Š., Gál, N., Sojková, M., Pisarčík, M.,Dobročka, E., Machajdík, D., : Superconductor-ferromagnet-superconductor nanojunctions. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 156-157.. (APVV-0494-11). (APVV 14-0613). (VEGA 2/0120/14). (VEGA 2/0173/13).

 

Kúdela, R., Gregušová, D., Šoltýs, J., Kučera, M., Dobročka, E., : Technology and application of in-situ alox layers on III-V semiconductors. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 87-88.. (VEGA 2/0105/13). (APVV 14-0297).

 

Dobročka, E., Novák, P., Búc, D., Harmatha, L., Murín, J., : X-ray diffraction analysis of residual stresses in textured ZnO thin films. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 38-41.

 

  • 2014
Blagoev, B., Gostev, I., Nurgaliev, T., Štrbik, V., Bineva, I., Uspenskaya, L., Mateev, E., Neshkov, L.,Dobročka, E., Chromik, Š., : Deposition and characterization of thin HTS and magnetic perovskite films. J. Phys.: Conf. Ser. 514 (2014) 012041. (VEGA 2/0173/13).

 

Novák, P., Dobročka, E., Búc, D., Kováč, J., : Determination of residual stress in thin film by GIXRD. In: Proc. 20th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2014). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2014. P. 300-303. (APVV 0301-10). (VEGA 2-0147-11).

 

Grančič, B., Mikula, M., Roch, T., Zeman, P., Satrapinskyy, L., Gregor, M., Plecenik, T., Dobročka, E., Hájovská, Z., Mičušík, M., Šatka, A., Zahoran, M., Plecenik, A., Kúš, P., : Effect of Si addition on mechanical properties and high temperature oxidation resistance of Ti-B-Si hard coatings. Surface Coating Technol. 240 (2014) 48-54.

 

Štrbik, V., Reiffers, M., Dobročka, E., Šoltýs, J., Španková, M., Chromik, Š., : Epitaxial LSMO thin films with correlation of electrical and magnetic properties above 400K. Applied Surface Sci 312 (2014) 212-215.(APVV-0494-11). (VEGA 2/0173/13). (VEGA 2/0120/14).

 

Horváth, B., Šustek, M., Škriniarová, J., Omastová, M., Dobročka, E., Hronec, M., : Gas phase hydroxylation of benzene with air-ammonia mixture over copper-based phosphate catalysts. Applied Catal. A 481 (2014) 71-78.

 

Španková, M., Chromik, Š., Dobročka, E., Štrbik, V., Sojková, M., : LSMO films with increased temperature of MI transition. Acta Phys. Polonica A 126 (2014) 212-213. (APVV-0494-11). (APVV LPP-0078-07). (VEGA 2-0164-11). (CENTE II).

 

Chromik, Š., Štrbik, V., Dobročka, E., Roch, T., Rosová, A., Španková, M., Lalinský, T., Vanko, G., Lobotka, P., Ralbovský, M., Choleva, P., : LSMO thin films with high metal-insulator transition temperature on buffered SOI substrates for uncooled microbolometers. Applied Surface Sci 312 (2014) 30-33. (APVV-0494-11). (SK-CN-0012-12). (VEGA 2/0120/14). (VEGA 2/0173/13). (CENTE II).

 

Murakami, K., Rommel, M., Hudec, B., Rosová, A., Hušeková, K., Dobročka, E., Rammula, R., Kasikov, A., Han, J., Lee, W., Song, S., Paskaleva, A., Bauer, A., Frey, L., Fröhlich, K., Aarik, J., Hwang, C., : Nanoscale characterization of TiO2 films grown by atomic layer deposition on RuO2 electrodes. ACS Applied Mater. Interfaces 6 (2014) 2486-2492. (VEGA 2-0147-11). (APVV 0509-10).

 

Vanko, G., Dzuba, J., Rýger, I., Lalinský, T., Vojs, M., Vincze, A., Dobročka, E., : Processing technology of MEMS sensors using III-N material system In: 17. škola vákuovej techniky: Analýza materiálov vo vákuu. Material analysis in vacuum. Eds. M. Michalka et al. Bratislava: FEI STU 2014. ISBN 978-80-971179-4-8. P. 39-43. (APVV 0455-12). (APVV 0450-10).

 

Búc, D., Kováč, J., Kutiš, V., Murín, J., Čaplovičová, M., Škriniarová, J., Novák, P., Novák, J., Hasenöhrl, S.,Dobročka, E., : Residual stress in RF magnetron deposited ZnO/GaP thin films and nanowires In: Proc. of the jointly organized WCCM XI, ECCM V, ECFD VI. Eds. E. Oñate et al. Barcelona: CIMNE 2014. ISBN: 978-84-942844-7-2. P. 2846-2856. (VEGA 2-0147-11).

 

Jančovič, P., Hudec, B., Dobročka, E., Dérer, J., Fedor, J., Fröhlich, K., : Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures. Applied Surface Sci 312 (2014) 112-116.(APVV 0509-10). (VEGA 2/0138/14). (CENTE).

 

Hudec, B., Paskaleva, A., Jančovič, P., Dérer, J., Fedor, J., Rosová, A., Dobročka, E., Fröhlich, K., :Resistiveswitching in TiO2-based metal-insulator-metal structures with Al2O3 barrier layer at the metal/dielectric interface. Thin Solid Films 563 (2014) 10-14. (VEGA 2/0138/14). (APVV 0509-10).

 

Zápražný, Z., Korytár, D., Šiffalovič, P., Jergel, M., Demydenko, M., Mikulík, P., Dobročka, E., Ferrari, C., Vagovič, P., Mikloška, M., : Simulations and surface quality testing of high asymetry angle x-ray crystal monochromators for advanced x-ray imaging applications. Proc. SPIE 9207 (2014) 92070Y. (ITMS 26220220170). (APVV 0308-11). (COST MP1203).

 

Červeň, I., Dobročka, E., Fejdi, P., Vančová, I., : Slovenská kryštalografická terminológia. Bratislava: Veda 2014. ISBN: 978-80-224-1361-9. 208 s.

 

Ušák, E., Šoka, M., Ušáková, M., Dobročka, E., : Structural and magnetic properties of nano-sized NiZn ferrites. Acta Phys. Polonica A 126 (2014) 68-69.

 

Trgala, M., Žemlička, M., Neilinger, P., Rehak, M., Leporis, M., Gaži, Š., Greguš, J., Plecenik, T., Roch, T.,Dobročka, E., Grajcar, M., : Superconducting MoC thin films with enhanced sheet resistance. Applied Surface Sci 312 (2014) 216-219.

 

  • 2013
Vanko, G., Lalinský, T., Ižák, T., Vojs, M., Vincze, A., Dobročka, E., Vallo, M., Dzuba, J., Rýger, I., Kromka, A., : AlGaN/GaN high electron mobility transistors for high temperatures In: Perspektívne vákuové metódy a technológie: 16. škola vákuovej techniky. Eds. M. Vojs, M. Veselý. Bratislava: Slov. vákuová spol. 2013. ISBN 978-80-971179-2-4. S. 55-59. (APVV 0455-12). (APVV 0199-10). (VEGA 1/0839/12).

 

Novák, P., Dobročka, E., Vallo, M., Lalinský, T., Ballo, P., : Depth distribution of chemical phase concentration determined by grazing incidence X-ray diffraction. In: Proc. 19th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2013). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2013. ISBN 978-80-227-3956-6. P. 96-98. (VEGA 2-0147-11). (CENTE II).

 

Horváth, B., Hronec, M., Vávra, I., Šustek, M., Križanová, Z., Dérer, J., Dobročka, E., : Direct gas-phase epoxidation of propylene over nanostructured molybdenum oxide film catalysts,. Catal. Comm. 34 (2013) 16-21.

 

Dobročka, E., Novák, P., Vallo, M., Lalinský, T., : Grazing incidence X-ray diffraction: study of depth distribution of chemical phase concentration. Mater. Struct. 20 (2013) 61-62.

 

Vallo, M., Lalinský, T., Dobročka, E., Vanko, G., Vincze, A., Rýger, I., : Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT,. Applied Surface Sci 267 (2013) 159-163. (MORGaN). (APVV 0450-10). (APVV 0655-07). (APVV 0199-10). (VEGA-2-0163-09).

 

Lalinský, T., Vallo, M., Vanko, G., Dobročka, E., Vincze, A., Osvald, J., Rýger, I., Dzuba, J., : Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation. Applied Surface Sci 283 (2013) 160-167. (APVV 0450-10). (APVV 0199-10). (VEGA 1/0839/12).

 

Korytár, D., Vagovič, P., Végsö, K., Šiffalovič, P., Dobročka, E., Jark, W., Áč, V., Zápražný, Z., Ferrari, C., Cecilia, A., Hamann, E., Mikulík, P., Baumbach, T., Fiederle, M., Jergel, M., : Potential use of V-channel Ge(220) monochromators in X-ray metrology and imaging. J. Applied Crystall. 46 (2013) 945-952. (ITMS 26220220170). (APVV 0308-11). (VEGA 2/0153/10).

 

Písečný, P., Chlpík, J., Chovan, J., Haško, D., Vincze, A., Hronec, P., Dobročka, E., Uherek, F., : Preparation and characterization of materials layers for photonic structures. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 258-261.

 

Lobotka, P., Radnóczi, G., Czigány, Z., Vávra, I., Držík, M., Micusik, M., Dobročka, E., Kunzo, P., :Preparation of nickel, nickel-iron, and silver-copper nanoparticles in ionic liquids.. In: IEEE Proc. 17th Inter. Conf. on Solid-State Sensors, Actuators and Microsyst. – Transducers 2013 & EUROSENSORS XXVII. IEEE 2013. ISBN: 978-1-4673-5981-8. P. 2021-2024. (APVV 0593 -11).

 

Korytár, D., Vagovič, P., Ferrari, C., Šiffalovič, P., Jergel, M., Dobročka, E., Zápražný, Z., Áč, V., Mikulík, P., : Process-induced inhomogeneities in higher asymmetry angle x-ray monochromators. Proc. SPIE 8848 (2013) 8848-28. (ITMS 26220220170). (APVV 0308-11).

 

Kováč, P., Hušek, I., Kopera, Ľ., Melišek, T., Rosová, A., Dobročka, E., : Properties of in situ made MgB2 in Nb or Ti sheath. Supercond. Sci Technol. 26 (2013) 025007. (APVV 0495-10). (VEGA 2-0121-12). (CENTE II).

 

Chromik, Š., Štrbik, V., Dobročka, E., Laurenčíková, A., Reiffers, M., Liday, J., Španková, M., : Significant increasing of onset temperature of FM transition in LSMO thin films,. Applied Surface Sci 269 (2013) 98-101.(VEGA 2/0144/10). (VEGA 2-0164-11). (APVV-0494-11).

 

Vincze, A., Vallo, M., Dobročka, E., Rýger, I., Vanko, G., Lalinský, T., : SIMS and XRD analysis on Ir contact layers for AlGaN/GaN HEMT structures. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 295-298. (APVV 0450-10).

 

Červeň, I., Dobročka, E., Fejdi, P., : Súpis základných termínov z kryštalografie Kultúra slova 47 (2013) 72-84.

 

  • 2012
Lalinský, T., Vanko, G., Vallo, M., Dobročka, E., Rýger, I., Vincze, A., : AlGaN/GaN high electron mobility transistors with nickel oxide based gates formed by high temperature oxidation. Applied Phys. Lett. 100 (2012) 092105. (MORGaN). (APVV 0450-10). (APVV 0199-10). (APVV 0655-07). (VEGA-2-0163-09).

 

Viljamaa, J., Kario, A., Dobročka, E., Reissner, M., Kulich, M., Kováč, P., Haessler, W., : Effect of heat treatment temperature on superconducting performance of B4C added MgB2/Nb conductors. Physica C 473 (2012) 34-40. (CENTE II).

 

Srnánek, R., Jakabovič, J., Kováč, J., Kováč, J., Haško, D., Šatka, A., Dobročka, E., Donoval, D., :Identification of the crystalline-phases in thin pentacene layers by Raman spectroscopy. Vacuum 86 (2012) 627-629.

 

Kuzma, A., Weis, M., Flickyngerová, S., Jakabovič, J., Šatka, A., Dobročka, E., Chlpík, J., Cirák, J., Donoval, M., Telek, P., Uherek, F., Donoval, D., : Influence of surface oxidation on plasmon resonance in monolayer of gold and silver nanoparticles. J. Applied Phys. 112 (2012) 103531. (VEGA 2-0147-11).

 

Chromik, Š., Lalinský, T., Dobročka, E., Gierlowski, P., Štrbik, V., Laurenčíková, A., Španková, M., : Mutual compatibility of AlGaN HEMT and HTS (YBCO) technology. Supercond. Sci Technol. 25 (2012) 035008. (VEGA 2-0164-11). (VEGA 2/0144/10). (VEGA-2-0163-09). (APVV 0450-10). (APVV 51-040605).

 

Azimi, H., Fournier, D., Wirix, M., Dobročka, E., Ameri, T., Machui, F., Rodman, S., Dennler, G., Scharber, M., Hingerl, K., Loos, J., Brabec, C., Morana, M., : Nano-morphology characterization of organic bulk heterojunctions based on mono and bis-adduct fullerenes. Organic Electr. 13 (2012) 1315-1321.

 

Fröhlich, K., Mičušík, M., Dobročka, E., Šiffalovič, P., Gucmann, F., Fedor, J., : Properties of Al2O3 thin films grown by atomic layer deposition. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 171-174.

 

Roch, T., Dobročka, E., Mikula, M., Pidík, A., Durina, P., Haidry, A., Plecenik, T., Truchly, M., Grančič, B., Plecenik, A., Kúš, P., : Strong biaxial texture and polymorph nature in TiO2 thin film formed by ex-situ annealing on c-plane Al2O3 surface. J. Crystal Growth 338 (2012) 118-124.

 

Cirák, J., Sokolský, M., Weis, M., Dobročka, E., : The Langmuir monolayer: an efficient model for studying interfacial properties of biomembranes. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 157-160. (not IEE SAS).

 

  • 2011
Hudec, B., Hušeková, K., Dobročka, E., Aarik, J., Rammula, R., Kasikov, A., Tarre, A., Vincze, A., Fröhlich, K., : Atomic layer deposition grown metal-insulator-metal capacitors with RuO2 electrodes and Al-doped rutile TiO2 dielectric layer. J. Vacuum Sci Technol. B 29 (2011) 01AC09. (APVV 0133-07). (VEGA 2/0031/08).

 

Schröfel, A., Kratošová, G., Bohunická, M., Dobročka, E., Vávra, I., : Biosynthesis of gold nanoparticles using diatoms-silica-gold and EPS-gold bionanocomposite formation, J. Nanopart. Res. 13 (2011) 3207-3216.

 

Vincze, A., Michniak, P., Varga, M., Dobročka, E., Uherek, F., : Development of diamond thin films on various substrates. In: APCOM 2011. Eds. D.Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 82-85.

 

Lapin, J., Pelachová, T., Witusiewicz, V., Dobročka, E., : Effect of long-term ageing on microstructure stability and lattice parameters of coexisting phases in intermetallic Ti–46Al–8Ta alloy. Intermetallics 19 (2011) 121-124.

 

Paskaleva, A., Ťapajna, M., Dobročka, E., Hušeková, K., Atanassova, E., Fröhlich, K., : Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks. Applied Surface Sci 257 (2011) 7876-7880.(APVV 0133-07). (VEGA 2/0031/08).

 

Jakabovič, J., Vincze, A., Kováč, J., Srnánek, R., Kováč, J., Dobročka, E., Donoval, D., Heinemeyer, U., Schreiber, F., Machovic, V., Uherek, F., : Surface and interface analysis of iodine-doped pentacene structures for OTFTs, Surface Inteface Anal. 43 (2011) 518-521. (not IEE SAS).

 

Mikula, M., Grančič, B., Roch, T., Plecenik, T., Vávra, I., Dobročka, E., Šatka, A., Buršíková, V., Držík, M., Zahoran, M., Plecenik, A., Kúš, P., : The influence of low-energy ion bombardment on the microstructure development and mechanical properties of TiBx coatings. Vacuum 85 (2011) 866-870.

 

Srnánek, R., Jakabovič, J., Kováč, J., Dobročka, E., Donoval, D., : Thin pentacene layer under pressure. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 296-299.

 

  • 2010
Korytár, D., Ferrari, C., Mikulík, P., Vagovič, P., Dobročka, E., Áč, V., Konopka, P., Erko, A., Abrosimov, N., Zápražný, Z., : 1D X‐ray Beam Compressing Monochromators. AIP Conf. Proc. 1221 (2010) 59-62.

 

Viljamaa, J., Kováč, P., Hušek, I., Melišek, T., Štrbik, V., Dobročka, E., : Effect of fabrication route on density and connectivity of MgB2 filaments J. Phys.: Conf. Series 234 (2010) 022041.

 

Kováč, P., Hušek, I., Kulich, M., Hušeková, K., Melišek, T., Dobročka, E., : Effects influencing the grain connectivity in ex-situ MgB2 wires. Physica C 470 (2010) 340-344. (VEGA 2/0037/09).

 

Srnánek, R., Jakabovič, J., Dobročka, E., Irmer, G., Heinemeyer, U., Broch, K., Schreiber, F., Vincze, A., Machovic, V., Kováč, J., Donoval, D., : Evidence of pentacene bulk and thin film phase transformation into an orthorhombic phase by iodine diffusion. Chemical Phys. Lett. 484 (2010) 299-303.

 

Ťapajna, M., Paskaleva, A., Atanassova, E., Dobročka, E., Hušeková, K., Fröhlich, K., : Gate oxide thickness dependence of the leakage current mechanism in Ru/Ta2O5/SiON/Si structures Semicond. Sci Technol. 25 (2010) 075007.

 

Hušeková, K., Dobročka, E., Rosová, A., Šoltýs, J., Šatka, A., Fillot, F., Fröhlich, K., : Growth of RuO2 thin films by liquid injection atomic layer deposition. Thin Solid Films 518 (2010) 4701-4704.

 

Hudec, B., Hušeková, K., Dobročka, E., Lalinský, T., Aarik, J., Aidla, A., Fröhlich, K., : High-permittivity metal-insulator-metak capacitors with TiO2 rutile dielectric and RuO2 bottom electrode IOP Conf. Series: Mater. Sci Engn. 8 (2010) 012024.

 

Jurkovič, M., Hušeková, K., Čičo, K., Dobročka, E., Nemec, M., Fedor, J., Fröhlich, K., : Characterization of high permittivity GdScO3 films prepared by liquid injection MOCVD. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 247-250.

 

Korytár, D., Ferrari, C., Mikulík, P., Vagovič, P., Dobročka, E., Áč, V., Konopka, P., Erko, A., Abrosimov, N., : Linearly graded GeSi beam-expanding/compressing X-ray monochromator J. Applied Crystall. 43 (2010) 176-178.

 

Gregušová, D., Gaži, Š., Sofer, Z., Stoklas, R., Dobročka, E., Mikulics, M., Greguš, J., Novák, J., Kordoš, P., : Oxidized Al film as an insulation layer in AlGaN/GaN Metal–Oxide–Semiconductor heterostructure field effect transistors Japan. J. Applied Phys. 49 (2010) art. no. 046504. (VEGA 2/0098/09).

 

Chromik, Š., Gierlowski, P., Španková, M., Dobročka, E., Vávra, I., Štrbik, V., Lalinský, T., Sojková, M., Liday, J., Vogrinčič, P., Espinos, J., : Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate. Applied Surface Sci 256 (2010) 5618-5622.

 

Hušeková, K., Hušek, I., Kováč, P., Kulich, M., Dobročka, E., Štrbik, V., : Properties of MgB2 superconductor chemically treated by accetic acid. Physica C 470 (2010) 331-335. (VEGA 2/0037/09).

 

Áč, V., Korytár, D., Zápražný, Z., Dobročka, E., : Thermally tuned x-ray V-shaped monochromator – simulations and experimental results. In: APCOM 2010. Eds. J. Vajda and M. Weis. Bratislava: FEI STU, 2010. ISBN: 978-80-227-3307-6. P. 93-96.

 

Dobročka, E., Jergel, M., : X-ray laboratory with rotating anode of the Consortium MULTIDISC of SAS – capabilities of the diffractometer Bruker D8 DISCOVER SSS, Materials Struct. 17 (2010) k12-k17.

 

  • 2009
Kúdela, R., Kučera, M., Dobročka, E., Šoltýs, J., : AlGaAs/InGaP interfaces in structures prepared by MOVPE. J. Crystal Growth 311 (2009) 3123-3129. (APVV 51-045705).

 

Srnánek, R., Jakabovič, J., Dobročka, E., Kováč, J., Kytka, M., Donoval, D., : Diffusion of iodine in thin pentacene layers. In: APCOM 2009. Eds. D. Pudiš et al. Žilina: Univ. Žilina 2009. ISBN: 978-80-554-0057-0. P. 100-103.

 

Šebo, P., Moser, Z., Švec, P., Janičkovič, D., Dobročka, E., Gasior, W., Pstruś, J., : Effect of indium on the microstructure of the interface between Sn3.13Ag0.74CuIn solder and Cu substrate. J. Alloys Compounds 480 (2009) 409-415.

 

Fröhlich, K., Aarik, J., Ťapajna, M., Rosová, A., Aidla, A., Dobročka, E., Hušeková, K., : Epitaxial growth of high-κ TiO2 rutile films on RuO2 electrodes. J. Vacuum Sci Technol. B 27 (2009) 266-270. (APVV 0133-07). (VEGA 2/0031/08).

 

Kúdela, R., Gregušová, D., Stoklas, R., Šoltýs, J., Kučera, M., Dobročka, E., Kordoš, P., : HEMT transistors with aluminum oxide and InGaP layers. In: EW-MOVPE XIII. Ulm Univ. 2009. P. 225-228.

 

Hušeková, K., Jurkovič, M., Čičo, K., Machajdík, D., Dobročka, E., Lupták, R., Fröhlich, K., : Preparation of high permitivity GdScO3 films by liquid injection MOCVD, ECS Trans. 25 (2009) 1061.

 

Vincze, A., Lupták, R., Hušeková, K., Dobročka, E., Fröhlich, K., : Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD. Vacuum 84 (2009) 170. (VEGA 2/0031/08).

 

Fröhlich, K., Vincze, A., Dobročka, E., Hušeková, K., Čičo, K., Uherek, F., Lupták, R., Ťapajna, M., Machajdík, D., : Thermal stability of GdScO3 dielectric films grown on Si and InAlN/GaN substrates, Mater. Res. Soc. Symp. Proc. 1155 (2009) C09-03.

 

  • 2008
Paskaleva, A., Ťapajna, M., Atanassova, E., Fröhlich, K., Vincze, A., Dobročka, E., : Effect of Ti doping on Ta2O5 stacks with Ru and Al gates. Applied Surface Sci 254 (2008) 5879-5885.

 

Ťapajna, M., Dobročka, E., Paskaleva, A., Hušeková, K., Atanassova, E., Fröhlich, K., : Electrical characterization of Ru- and RuO2/Ta2O5 gate stacks for nanoscale DRAM technology. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 267-270.

 

Fröhlich, K., Ťapajna, M., Rosová, A., Dobročka, E., Hušeková, K., Aarik, J., Aidla, A., : Growth of high-dielectric-constant TiO2 films in capacitors with RuO2 electrodes. Electrochem. Solid-State Lett. 11 (2008) G19-G21. (VEGA 2/0031/08).

 

Srnánek, R., Kováč, J., Jakabovič, J., Kováč, J., Irmer, G., Dobročka, E., Haško, D., : Characterization of organic field effect transistor structures by micro-Raman. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 255-258.

 

Orlický, O., Funaki, M., Dobročka, E., : Magnetomineralogical and the domain structure observations of the low-temperature oxidized titanomagnetite bearing basalts from southern Slovakia, Contrib. Geophys. Geodesy. Spec. Iss. 38 (2008) 89.

 

Kováč, P., Hušek, I., Dobročka, E., Melišek, T., Haessler, W., Herrmann, M., : MgB2 tapes made of mechanically alloyed precursor powder in different metallic sheaths. Supercond. Sci Technol. 21 (2008) 015004.

 

Beňo, J., Weis, M., Dobročka, E., Haško, D., : Mixed 2D molecular systems: Mechanic, thermodynamic and dielectric properties. Applied Surface Sci 254 (2008) 6370-6375.

 

Ťapajna, M., Rosová, A., Dobročka, E., Štrbik, V., Gaži, Š., Fröhlich, K., Benko, P., Harmatha, L., Manke, C., Baumann, P., : Work function thermal stability of RuO2-rich Ru–Si–O p-channel metal-oxide-semiconductor field-effect transistor gate electrodes. J. Applied Phys. 103 (2008) 073702.

 

  • 2007
Ťapajna, M., Rosová, A., Hušeková, K., Roozeboom, F., Dobročka, E., Fröhlich, K., : Evidence of hafnia oxygen vacancy defects in MOCVD grown HfxSi1-xOy ultrathin gate dielectrics gated with Ru electrode. Microelectr. Engn. 84 (2007) 2366-2369.

 

Kúdela, R., Martaus, J., Cambel, V., Kučera, M., Dobročka, E., : Novel MOVPE grown 2DEG structures for local anodic oxidation. In: EW-MOVPE XII: extended abstracts. Bratislava: IEE SAS, 2007. P. 49-52.

 

Kováč, P., Hušek, I., Skákalová, V., Meyer, J., Dobročka, E., Hirscher, M., Roth, S., : Transport current improvements of in-situ MgB2 tapes by the addition of carbon nanotubes, silicon carbide or graphite. Supercond. Sci Technol. 20 (2007) 105-111.

 

  • 2006
Fröhlich, K., Lupták, R., Dobročka, E., Hušeková, K., Čičo, K., Rosová, A., Lukosius, M., Abrutis, A., Písečný, P., Espinos, J., : Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition. Materials Sci Semicond Process. 9 (2006) 1065-1072.

 

Ťapajna, M., Hušeková, K., Fröhlich, K., Dobročka, E., Roozeboom, F., : Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 21-24.

 

Franta, M., Rosová, A., Ťapajna, M., Dobročka, E., Fröhlich, K., : Microstructure of HfO2 and HfxSi1-xOy dielectric films prepared on Si for advanced CMOS application. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 47-50.

 

  • 2005
Grančič, B., Mikula, M., Hruba, L., Gregor, M., Štefečka, M., Csuba, A., Dobročka, E., Plecenik, A., Kúš, P., : The influence of deposition parameters on TiB2 thin films prepared by DC magnetron sputtering, Vacuum 80 (2005) 174. (not IEE SAS).

 

  • 2002
Horváth, D., Gmitra, M., Vávra, I., Dobročka, E., Brutovsky, B., : The evolutionary approach to the optimization of finite-size effects in magnetic dot arrays Czechosl. J. Physics 52 (2002) 123-126.

 

  • 2001
Dobročka, E., Vávra, I., Wallenberg, L., : Simulation of electron diffraction patterns from III–V alloys with CuPt ordering: Effect of clusters and antiphase boundaries. J. Applied Phys. 89 (2001) 2653-2665.

 

  • 1998
Harvanka, M., Dobročka, E., Vávra, I., : Antiphase boundaries in the ordered InGaP epitaxial layers prepared by MO CVD. In: HEAD 97. Eds. P. Kordoš et al. NATO ASI Ser. 4/45. Dordrecht: Kluwer Acad Publ 1998. P. 115.

 

Munzar, L., Dobročka, E., Vávra, I., Kúdela, R., Harvanka, M., Christensen, N., : Antiphasing mechanism of ordered InGaP layers grown on GaAs Phys. Rev. B 57 (1998) 4642.

 

Dobročka, E., Vávra, I., Harvanka, M., : The stability of the misfit dislocation array at the substrate-epitaxial layer interface. In: HEAD 97. Eds. P. Kordoš et al. NATO ASI Ser. 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 63.

 

  • 1996
Osvald, J., Dobročka, E., : Generalized approach to the parameter extraction from Schttky diodes I.-V. characteristics Semicond. Sci Technol. 11 (1996) 1198-1202.

 

Dobročka, E., Vávra, I., Kúdela, R., Harvanka, M., : Ordering in InGaP prepared by MOCVD. In: HEAD 95. Eds. J.Novák et el. NATO ASI Series 3, High Technol. 11. Dordrecht: Kluwer Acad. Publ. 1996. P. 217.

 

  • 1995
Dobročka, E., Osvald, J., : Response to „Comment on Influence of barrier height distribution on the parameters of Schottky diodes“ Applied Phys. Lett. 66 (1995) 3069.

 

Vávra, I., Dobročka, E., Wallenberg, L., : Transmission electron microscopy of superlattices. In: Proc. Multinat. Congress Electron Microscopy 1995. Bratislava: VÚ SAV 1995. P. 81.

 

  • 1994
Dobročka, E., Osvald, J., : Influence of barrier height distribution on the parameters of Schottky diodes Applied Phys. Lett. 65 (1994) 575.

 

Ožvold, M., Tuscher, L., Čičmanec, P., Dobročka, E., Hurtová, ., Kopačková, ., Vávra, I., : Solid phase recrystallization of thin polycrystalline silicon films implanted with Si ions, Acta Phys. Slovaca 44 (1994) 207.

 

  • 1991
Dobročka, E., : Geometrical principles of the monolithic x-ray magnifier, J. Applied Crystall. 24 (1991) 212-221. (not IEE SAS).

 

Dobročka, E., Gleichmann, R., : The evolution of prismatic dislocation loops in heavily Si-doped GaAs, IoP Conf. Series 117 (1991) 343-346. (not IEE SAS).

 

  • 1990
Dobročka, E., : The effect of growth orientation on the resolved shear stresses for horizontal bridgman grown gaas crystals J. Crystal Growth 104 (1990) 428-434.

 

Dobročka, E., Sladek, J., : Thermal-stress analysis in horizontal bridgman grown crystals J. Crystal Growth 104 (1990) 419-427.

 

  • 1989
Osvald, J., Dobročka, E., : The influence of postimplantation annealing on stresses in GaAs waters. In: Proc. 3rd Conf. Phys. Technol. GaAs other III-V Semicond. Ed. P.Kordoš. Zürich: Trans. Tech. Publ. 1989. P. 219.