doc.RNDr. Lubomír HRIVNÁK, DrSc.


HrivnákL.: Exciton binding-energy as a function of the well width, J. Applied Phys. 72 (1992) 321-3219.

HrivnákL.: Simple calculations of energy-levels in quantum-wells of lattice-matched semiconductors with nonparabolic bands, J. Applied Phys. 72 (1992) 4370-4376.


HrivnákL.: The relations for electron effective masses of strained InxGa1-xAs layers, Physica Status Solidi A 123 (1991) K133-K137.

HrivnákL.: Conduction-band discontinuities of strained and unstrained layer InxGa1-xAs and InxGa1-xAs/InP heterojunctions and quantum-wells, Physica Status Solidi A 123 (1991) K111-K116.

HrivnákL.: Band-gaps, effective masses, and band offsets in lattice matched heterojunctions, Physica Status Solidi A 128 (1991) K89-K93.


HrivnákL.: Determination of gamma-electron and light hole effective masses in AlxGa1-xAs on the basis of energy gaps, band-gap offsets, and energy-levels in AlxGa1-xAs/GaAs quantum-wells, Applied Phys. Lett. 56 (1990) 2425-2427.


HrivnákL.: Compositional dependences of band-gap energy and electron and light hole effective masses in InxGa1-xAs, Physica Status Solidi A 116 (1989) K73-K76.


HrivnákL.: New relations for band-edge offsets in lattice matched heterojunctions, Acta Physica Slovaca 38 (1988) 346.


HrivnákL.: An empirical relation for relative electronic permittivity of AnB8-n tetrahedrally coordinated crystals, Czechoslovak J. Phys. 37 (1987) 1407-1408.

HrivnákL.: On the nearest-neighbor distances in tetrahedrally coordinated AnB8-n crystals, Czechoslovak J. Phys. 37 (1987) 1313-1316.

HrivnákL.: Band-gap narrowing in semiinsulating gallium-arsenide, J. Applied Phys. 62 (1987) 3228-3233.


HrivnákL.: The approximative formulas for longitudinal optical phonon energy and density in tetrahedrally coordinated AnB8-n crystals, Czechoslovak J. Phys. 36 (1986) 771-774.


HrivnákL.: Band-gap narrowing in semi-insulating GaAs, Phys. Status Solidi b 127 (1985) K165.

HrivnákL.: New formula for the nearest-neighbour distances in tetrahedrally coordinated AnB8-n crystals, Czechoslov. J. Phys. B 35 (1985) 581.

HrivnákL.: A simple formula for the lattice constant of cubic crystals, Acta Physica Slovaca 35 (1985) 55.

HrivnákL.: Estimation of nearest-neighbour distances and electron effective masses in ternarry and quaternarry tetrahedrally coordinated solid solutions of III-V and II-VI compounds, Czechosl. J. Phys. 35 (1985) 1445.


HrivnákL.: Semiinsulating GaAs, Czechoslov. J. Phys. B 34 (1984) 436.

HrivnákL. and Kedro, M.: Mobility of electrons limited by scattering on an impurity-ion potential with a spatialy variable dielectric function, Acta Physica Slovaca 34 (1984) 37.

HrivnákL. and Kedro, M.: On the electron mobility in GaAs samples with dominant electrical level 0.15 eV below the conduction band, Acta Physica Slovaca 34 (1984) 234.


HrivnákL.: On the determination of carrier mobilities and densities in semi-insulating GaAs, Phys. Status Solidi a 80 (1983)


HrivnákL. and Betko, J.: On the relation between electron and hole mobilities in semi-insulating GaAs, Physica Status Solidi B 112 (1982) K143.

HrivnákL.: Electric field dependence of longitudinal electron diffusivity in GaAs, Acta Physica Slovaca 32 (1982) 153.


Olejníková, B., HrivnákL., and Kedro, M.: The model potential for charged centers in semiconductors, Phys. Status Solidi b 107 (1981) 451.


HrivnákL.: A note on the utilization of the Poole-Frenkel effect for the determination of trap potential well, Phys. Status Solidi b 101 (1980) K137.

HrivnákL.: Current induced transition from a high resistivity to a low resistivity state in semiconductors, Acta Physica Slovaca 30 (1980) 243.

HrivnákL. and Dubecký, F.: The temperature and compensation dependence of the threshold voltage for switching effect due to the Poole-Frenkel and screening effects with application to chromium doped GaAs structures, Acta Physica Slovaca 30 (1980) 233.


HrivnákL. and Ďurovová, B.: High-field capture of electrons by screened coulomb attractive center, Phys. Status Solidi b 92 (1979) K99.


HrivnákL.: On the switching effect in crystalline semiconductors, Phys. Status Solidi A (1978) 2.


HrivnákL., Morvic, M., and Betko, J.: Current-voltage characteristics of GaAs p-i-n and n-i-n diodes, Solid-State Electr. 20 (1977) 417.


HrivnákL.: The switching effect in crystalline semiconductors due to the screening of donor: by conduction electrons, Phys. Status Solidi A 36 (1976) 551.

HrivnákL.: Injection of electron into semi-insulating GaAs, Phys. Status Solidi A 37 (1976) K1.

HrivnákL.: The screening inflence of the conduction electrons on the shallow donor levels in n-type GaAs, Czechoslov. J. Phys. 26 (1976) 670.