doc. RNDr. Martin MOŠKO, DrSc.

  • 2019

Vidiš, M., Plecenik, T., Moško, M., Tomašec, S., Roch, T., Satrapinsky, L., Grančič, B., and Plecenik, A.: Gasistor: A memristor based gas-triggered switch and gas sensor with memory, Applied Phys. Lett. 115 (2019) 093504. (Not IEE SAS)

  • 2018

Mošková, A. and Moško, M.: States-conserving density of states for Altshuler-Aronov effect: Heuristic derivation, Solid State Comm. 284-286 (2018) 56-61.

Dvoranová,, Plecenik, T., Moško, M., Vidiš, M., Gregor, M., Roch, T., Grančič, B., Satrapinsky, L., Kúš, P., and Plecenik, A.: Point contact spectroscopy of superconductors via nanometer scale point contacts formed by resistive switching, AIP Adv. 8 (2018) 125217. (Not IEE SAS)

  • 2017
Mošková, A., Moško, M., : Note on the Coulomb blockade of a weak tunnel junction with Nyquist noise: Conductance formula for a broad temperature range,. Phys. Status Solidi C 14 (2017) 1700029. (VEGA 2/0200/14).

 

  • 2015
Plecenik, T., Moško, M., Haidry, A., Durina, P., Truchly, M., Grančič, B., Gregor, M., Roch, T., Satrapinskyy, L., Mošková, A., Mikula, M., Kúš, P., Plecenik, A., : Fast highly-sensitive room-temperature semiconductor gas sensor based on the nanoscale Pt-TiO2-Pt sandwich. Sensors Actuators B 207 (2015) 351-361.. (APVV 0199-10).

 

Krško, O., Plecenik, T., Moško, M., Haidry, A., Durina, P., Truchly, M., Grančič, B., Gregor, M., Roch, T., Satrapinskyy, L., Mošková, A., Kúš, P., Plecenik, A., : Highly sensitive hydrogen semiconductor gas sensor operating at room temperature. Procedia Engn. 120 (2015) 618-622.

 

Plecenik, T., Moško, M., Haidry, A., Durina, P., Truchly, M., Krško, O., Grančič, B., Gregor, M., Roch, T., Satrapinskyy, L., Mošková, A., Mikula, M., Kúš, P., Plecenik, A., : Highly sensitive Pt/TiO2/Pt sandwich type hydrogen gas sensor operating at room temperature. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 116-117.

 

  • 2014
Plecenik, A., Haidry, A., Plecenik, T., Durina, P., Truchly, M., Moško, M., Grančič, B., Gregor, M., Roch, T., Satrapinskyy, L., Mošková, A., Mikula, M., Kúš, P., : Metal oxide gas sensors on the nanoscale. Proc. SPIE 9083 (2014) 9083OY. (APVV 0199-10).

 

Durina, P., Plecenik, T., Moško, M., Haidry, A., Truchly, M., Mikula, M., Grančič, B., Roch, T., Gregor, M., Satrapinskyy, L., Kúš, P., Plecenik, A., : Properties of metal oxide gas sensors with electrodes placed below and on top of the sensing layer, Key Engn. Mater. 605 (2014) 527-530.

 

  • 2013
Feilhauer, J., Moško, M., : Coexistence of diffusive resistance and ballistic persistent current in disordered metallic rings with rough edges: possible origin of puzzling experimental values. Phys. Rev. B 88 (2013) 125424, also arXiv: 1203.6512v2 (2012). (VEGA 2-0206-11).

 

Durina, P., Plecenik, T., Moško, M., Haidry, A., Truchly, M., Mikula, M., Grančič, B., Roch, T., Gregor, M., Satrapinskyy, L., Kúš, P., Plecenik, A., : Properties of metal oxide gas sensors with electrodes placed below and on top of the sensing layer In: Vrstvy a povlaky 2013. Plzeň: Západočes. univ., 2013. P. 19-21. ISBN 978-80-970824-2-0. (APVV 0199-10).

 

Mošková, A., Moško, M., Tóbik, J., : Theoretical study of persistent current in a nanoring made of a band insulator. Phys. Status Solidi B 250 (2013) 147-159. (VEGA 2-0206-11).

 

  • 2011
Feilhauer, J., Moško, M., : Conductance and persistent current in quasi-one-dimensional systems with grain boundaries: Effects of the strongly reflecting and columnar grains. Phys. Rev. B 84 (2011) 085454.

 

Mošková, A., Moško, M., : Jednoelektrónové tunelovanie a coulombovská blokáda. In: Kryofyzika a nanoelektronika. Košice: ÚEF SAV, 2011. ISBN 978-80-968060-9-6. S. 179-201.

 

Moško, M., : Perzistentný prúd v prstenci s normálnymi elektrónmi. In: Kryofyzika a nanoelektronika. Košice: ÚEF SAV, 2011. ISBN 978-80-968060-9-6. S. 202-219.

 

Feilhauer, J., Moško, M., : Quantum and Boltzmann transport in a quasi-one-dimensional wire with rough edges. Phys. Rev. B 83 (2011) 245328.

 

  • 2009
Moško, M., Németh, R., Krčmár, R., Indlekofer, K., : Luttinger liquid and persistent current in a continuous mesoscopic ring with a weak link. Phys. Rev. B 79 (2009) 245323.

 

Tóbik, J., Mošková, A., Moško, M., : Persistent currents in perfect crystalline insulators: realistic tight-binding model. In: Proc. 17th Conf. Slovak Physicists. Ed. M. Reiffers. Bratislava: Slovak Phys. Soc., 2009. ISBN 978-80-969124-7-6. P. 49-50.

 

  • 2008
Németh, R., Moško, M., : One-dimensional ring with Kronig–Penney periodic potential: Persistent currents at full filling. Physica E 40 (2008) 1498.

 

Feilhauer, J., Moško, M., : Persistent current in a disordered mesoscopic ring with many channels: Scattering-matrix based calculation. Physica E 40 (2008) 1582.

 

Krčmár, R., Gendiar, A., Moško, M., Németh, R., Vagner, P., Mitas, L., : Persistent current of correlated electrons in mesoscopic ring with impurity. Physica E 40 (2008) 1507-1509. (VEGA 2/6101/26).

 

Mošková, A., Moško, M., Gendiar, A., : Possible persistent current in a ring made of the perfect crystalline insulator. Physica E 40 (2008) 1991-1993.

 

  • 2006
Moško, M., Vagner, P., Gendiar, A., Németh, R., : Coherent transport of interacting electrons through a single scatterer. Physica B 378-380 (2006) 908.

 

Vagner, P., Moško, M., Németh, R., Wagner, L., Mitas, L., : Hartree–Fock versus quantum Monte Carlo study of persistent current in a one-dimensional ring with single scatterer. Physica E 32 (2006) 350-353.

 

Cambel, V., Šoltýs, J., Martaus, J., Moško, M., : IV characteristics in structures prepared by tip induced oxidation J. de Physique IV 132 (2006) 171-175.

 

Gendiar, A., Moško, M., Vagner, P., Németh, R., : Tunneling of interacting one-dimensional electrons through a single scatterer: Luttinger liquid behavior in the Hartree–Fock model. Physica E 34 (2006) 596.

 

  • 2005
Németh, R., Moško, M., : Hartree-Fock simulation of persistent current in rings with single scatterer. Acta Physica Polonica A 108 (2005) 795.

 

Gendiar, A., Moško, M., Vagner, P., Németh, R., : Tunneling of interacting fermions in 1D systems Acta Phys. Polonica 108 (2005) 661-667.

 

  • 2004
Cambel, V., Šoltýs, J., Moško, M., Kúdela, R., : Two-dimensional electron transport through a barrier prepared by tip-induced oxidation. Superlatt. Microstruct. 36 (2004) 359-367.

 

  • 2003
Moško, M., Vagner, P., Bajdich, M., Schaepers, T., : Coherent „metallic“ resistance and medium localization in a disordered one-dimensional insulator. Phys. Rev. Lett. 91 (2003) 136803.

 

Vagner, P., Markoš, P., Moško, M., Schaepers, T., : Coherent resistance of a disordered one-dimensional wire:  Expressions for all moments and evidence for non-Gaussian distribution. Phys. Rev. B 67 (2003) 165316.

 

  • 2002
Vagner, P., Moško, M., Markoš, P., Schaepers, T., : Dephasing of coherent one-dimensional transport in a disordered wire. Physica E 12 (2002) 703-707.

 

Moško, M., Vagner, P., : Elektrónový transport v jednorozmernom drôte s „disorderom“. In: 12. Konf. slov. fyzikov. Eds. M.Reiffers, L.Just. Košice: Slov. fyzik. spol. 2002. P. 56.

 

  • 2001
Vagner, P., Moško, M., Markoš, P., Schäpers, T., : Dephasing of coherent 1D transport in a disordered wire. In: 14th Int. Conf. on the Electronic Properties of Two-Dimensional Systems. Praha: 2001. P. 195.

 

  • 2000
Mošková, A., Moško, M., : Phase-shift analysis of two-dimensional carrier-carrier scattering in GaAs and GaN: Comparison with Born and classical approximations. Phys. Rev. B 61 (2000) 3048.

 

  • 1999
Moško, M., Vagner, P., : Born approximation versus the exact approach to carrier-impurity collisions in a one-dimensional semiconductor: Impact on the mobility Phys. Rev. B 59 (1999) R10445-R10448.

 

Moško, M., Kálna, K., : Carrier capture into a GaAs quantum well with a separate confinement region: comment on quantum and classical aspects Semicond. Sci Technol. 14 (1999) 790-796.

 

  • 1998
Vagner, P., Moško, M., : Carrier-impurity collisions in a narrow quantum wire: Born approximation versus exact solution. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 91.

 

Mošková, A., Moško, M., : Phase-shift analysis of two-dimensional carrier-carrier scattering. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 87.

 

  • 1997
Vagner, P., Munzar, L., Moško, M., : Calculation of excitonic absorption spectrum of GaAs quantum wire free-standing in vacuum Acta Physica Polonica A 92 (1997) 1038.

 

Vagner, P., Moško, M., : Electron-impurity scattering in free- standing quantum wires: effect of dielectric confinement J. Applied Phys. 81 (1997) 3196.

 

Moško, M., Munzar, L., Vagner, P., : Excitonic effects in free-standing ultrathin GaAs films Phys. Rev. B 55 (1997) 15416.

 

  • 1996
Kálna, K., Moško, M., : Carrier capture due to carrier-carrier interaction in quantum wells. In: HEAD 95. Eds. J.Novák et el. NATO ASI Series 3, High Technol. 11. Dordrecht: Kluwer Acad. Publ. 1996. P. 79.

 

Kálna, K., Moško, M., Peeters, F., : Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering Applied Phys. Lett. 68 (1996) 117.

 

Kálna, K., Moško, M., : Electron capture in quantum wells via scattering by electrons, holes and optical phonons Phys. Rev. B 54 (1996) 17730.

 

Vagner, P., Moško, M., : Impurity-scattering limited electron mobility in free-standing quantum wires: image charge effect Acta Phys. Polonica 90 (1996) 1103.

 

Mošková, A., Moško, M., : Microscopic origin of femtosecond spectral hole burning in laser excited quantum wells. In: HEAD 95. Eds. J.Novák et el. NATO ASI Series 3, High Technol. 11. Dordrecht: Kluwer Acad. Publ. 1996. P. 75.

 

Moško, M., Mošková, A., : Near-band edge spectral hole in a quantum well: No evidence for subpicosecond plasma thermalisation Acta Phys. Polonica A 90 (1996) 1055.

 

  • 1995
Moško, M., Mošková, A., Cambel, V., : Carrier-carrier scattering in photoexcited intrinsic GaAs quantum wells and its effect on femtosecond plasma thermalization Phys. Rev. B 51 (1995) 16860.

 

Kálna, K., Moško, M., Peeters, F., : Electron-electron scattering induced capture in GaAs quantum wells, Lithuanian J. Phys. 35 (1995) 435.

 

Moško, M., Cambel, V., : Thermalization of one-dimensional electron gas by many-body Coulomb scattering: molecular dynamics model for quantum wires Acta Physica Polonica 87 (1995) 157.

 

Moško, M., Pelouard, J., Pardo, F., : Transmitted-acoustic phonon draag between 2D electron gases in GaAs/AlGaAs systems at low temperatures: Monte Carlo study Phys. Rev. B 52 (1995) 5830.

 

  • 1994
Cambel, V., Moško, M., : Carrier-carrier scattering in photoexcited quantum wells: Inadequacy of two-particle model at low densities Semicond. Sci Technol. 9 (1994) 474.

 

Mošková, A., Moško, M., : Exchange carrier-carrier scattering of photoexcited spin-polarized carriers in GaAs quantum wells: Monte Carlo study Phys. Rev. B 49 (1994) 7443.

 

Moško, M., Mošková, A., : Photoexcited spin-polarized carriers in GaAs quantum wells: Monte Carlo study of exchange carrier-carrier scattering Semicond. Sci Technol. 9 (1994) 478.

 

Moško, M., Cambel, V., : Thermalization of one-dimensional electron gas by many-body Coulomb scattering: molecular dynamics model for quantum wires Phys. Rev. B 50 (1994) 8864.

 

Moško, M., Pelouard, J., Pardo, F., : Transmitted-acoustic phonon drag between parallel two-dimensional electron gases: Monte Carlo simulation Semicond. Sci Technol. 9 (1994) 806.

 

  • 1993
Cambel, V., Moško, M., : The influence of ionized impurities on electron-electron drag between parallel two-dimensional gases: Monte Monte Carlo simulation with molecular dynamics Semicond. Sci Technol. 8 (1993) 364.

 

  • 1992
Moško, M., Cambel, V., Mošková, A., : Electron-electron drag between parallel two-dimensional gases Phys. Rev. B 46 (1992) 5012.

 

  • 1991
Moško, M., Mošková, A., : Ensemble Monte Carlo simulation of electron-electron scattering: Improvements of conventional methods Phys. Rev. B 44 (1991) 10794.

 

  • 1990
Moško, M., Novák, I., : Picosecond real-space electron transfer in GaAs-N-AlxGa1-x heterostructures with graded barriers: Monte Carlo simulation J. Applied Phys. 67 (1990) 890.

 

  • 1989
Moško, M., Novák, I., : Energy exchange between heterostructures layers by real space electron transfer J. Applied Phys. 66 (1989) 2011.

 

Moško, M., Novák, J., : Monte Carlo study of real space electron transfer. In: Proc. 3rd Conf. Phys. Technol. GaAs other III-V Semicond. Ed. P.Kordoš. Zürich: Trans. Tech. Publ. 1989. P. 107.

 

  • 1988
Moško, M., Novák, I., Quittner, P., : On the analytical approach to the real space electron transfer in GaAs-AlGaAs heterostructures Solid State Electr. 31 (1988) 363.