Ing. Boris HUDEC

2011

HudecB., Hušeková, K., Tarre, A., Han, J.H., Han, S., Rosová, A., Lee, W., Kasikov, A., Song, S.J., Aarik, J., Hwang, C.S., and Fröhlich, K.: Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes, Microelectr. Engn. 88 (2011) 1514-1516.

Fröhlich, K., HudecB., Aarik, J., Tarre, A., Machajdík, D., Kasikov, A., Hušeková, K., and Gaži, Š.: Post-deposition processing and oxygen content of TiO2-based capacitors, Microelectr. Engn. 88 (2011) 1525-1528.

HudecB., Hušeková, K., Dobročka, E., Aarik, J., Rammula, R., Kasikov, A., Tarre, A., Vincze, A., and Fröhlich, K.: Atomic layer deposition grown metal-insulator-metal capacitors with RuO2 electrodes and Al-doped rutile TiO2 dielectric layer, J. Vacuum Sci Technol. B 29 (2011) 01AC09.

Racko, J., Mikolášek, M., Harmatha, L., Breza, J., HudecB., Fröhlich, K., Aarik, J., Tarre, A., Granzner, R., and Schwierz, F.: Analysis of leakage current mechanisms in RuO2-TiO2-RuO2 MIM structures, J. Vacuum Sci Technol. B 29 (2011) 01AC08.

Fröhlich, K., HudecB., Hušeková, K., Aarik, J., Tarre, A., Kasikov, A., Rammula, R., Vincze, A.: Low equivalent oxide thickness TiO2 based capacitors for DRAM applications, ECS Trans. 41 No.2 (2011) 73.

2010

HudecB., Hušeková, K., Dobročka, E., Lalinský, T., Aarik, J., Aidla, A., and Fröhlich, K.: High-permittivity metal-insulator-metak capacitors with TiO2 rutile dielectric and RuO2 bottom electrode, IOP Conf. Series: Mater. Sci Engn. 8 (2010) 012024.

HudecB., Hranai, M., Hušeková, K., Aarik, J., Tarre, A., and Fröhlich, K.: Resistive switching in RuO2/TiO2/RuO2 MIM structures for non-volatile memory application. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 255-258.

HudecB., Hušeková, K., Aarik, J., Tarre, A., Kasikov, A., and Fröhlich, K.: RuO2/TiO2 based MIM capacitors for DRAM application. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 341-344.

2008

HudecB., Ťapajna, M., Hušeková, K., Aarik, J., Aidla, A., and Fröhlich, K.: Low equivalent oxide thickness metal/insulator/metal structures for DRAM applications. In: ASDAM 2008. The 7th Inter. Conf. Advanced Semicond. Devices Microsyst. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 123-126.