Ing. Boris HUDEC, PhD.

  • 2020

Chang, C.C., Huang, H.H., Hudec, B., Wu, M.H., Chang, C.C.,  Liu, P.T., and Hou, T.H.: Strong read and write interference induced by breakdown failure in crossbar arrays, IEEE Trans. on Electron Devices 67 (2020) 5497-5504. (Not IEE SAS)

Kingra, S.K., Parmar, V., Chang, C.C., Hudec, B., Hou, T.-H., and Suri, M.: SLIM: Simultaneous logic-in-memory computing exploiting bilayer analog OxRAM devices, Sci Rep. 10 (2020) 2567. (Not IEE SAS)

Majumdar, S., Chen, Y., Hudec, B., Hou, T.H., and Suri, M.: Semi-empirical RC circuit model for non-filamentary Bi-layer OxRAM devices, IEEE Transactions on Electron Devices 67 (2020) 1348-1352. (Not IEE SAS)

Kumar, A., Bezugam, S. S., Hudec, B., Hou, T. -H., and Suri, M.: Exploiting analogue OxRAM conductance modulation for contrast enhancement application, Electron. Lett. 56 (2020) 594-596. (Not IEE SAS)

  • 2019

Lanza, M., Wong, H.S.P., Pop, E., Ielmini, D., Strukov, D., Regan, B.C., Larcher, L., Villena, M.A., Yang, J.J., Goux, L., Belmonte, A., Yang, Y.C., Puglisi, F.M., Kang, J.F.,  Magyari-Kope, B., Yalon, E., Kenyon, A., Buckwell, M., Mehonic, A., Shluger, A., Li, H.T., Hou, T.H., Hudec, B., Akinwande, D., Ge, R.J., Ambrogio, S., Roldan, J.B., Miranda, E., Sune, J., Pey, K.L., Wu, X., Raghavan, N., Wu, E., Lu, W.D., Navarro, G., Zhang, W.D., Wu, H.Q., Li, R.W., Holleitner, A., Wurstbauer, U., Lemme, M.C., Liu, M., Long, S.B., Liu, Q., Lv, H.B., Padovani, A., Pavan, P., Valov, I., Jing, X., Han, T.T., Zhu, K.C., Chen, S.C., Hui, F., and Shi, Y.Y.: Recommended methods to study resistive switching devices, Adv. Electron. Mater. 5 (2019) 1800143. (Not IEE SAS)

Hudec, B., Chang, C.-C., Wang, I-T., Fröhlich, K., and Hou, T.-H.: Three-dimensional integration of ReRAMs, Proc. IEEE Conf. Nanotechnol. (2019) 8626351.

  • 2018

Chang, C.C., Chen, P.C., Chou, T., Wang, I.T., Hudec, B., Chang, C.C., Tsai, C.M., Chang, T.S., and Hou, T.H.: Mitigating asymmetric nonlinear weight update effects in hardware neural network based on analog resistive synapse, IEEE J. Emerging Select. Topics in Circuits Systems 8 (2018) 116-124. (Not IEE SAS)

Hudec, B., Chang, C.-C., and Hou, T.-H.: Memristive devices by ALD: design aspects for high density 3D arrays for memory and neuromorphic applications. In 14th IEEE Inter. Conf. Solid-State Integr. Circuit Technology ICSICT Beijing 2018. P. 863-863. (Not IEE SAS)

  • 2017

Chen, H.Y., Brivio, S., Chang, C.C., Frascaroli, J., Hou, T.H., Hudec, B., Liu, M., Lv, H.B., Molas, G., Sohn, J., Spiga, S., Teja, V.M., Vianello, E., and Wong, H.S.P.: Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication, J. Electroceram.‏ 39 (2017) SI21-38. (Not IEE SAS)

Liu, P.S., Lin, C.T., Hudec, B., and Hou, T.H.: Internal current amplification induced by dielectric hole trapping in monolayer MoS2 transistor, Nanotechnol.‏ 28 (2017) 475204. (Not IEE SAS)

  • 2016

Hudec, B., Hsu, C., Wang, I., Lai, W., Chang, C., Wang, T., Fröhlich, K., Ho, C., Lin, C., and Hou, T.: 3D resistive RAM cell design for high-density storage class memory – a review, Sci China Infor. Sci 59 (2016) 061403.

Hudec, B., Wang, I., Lai, W., Chang, C., Jančovič, P., Fröhlich, K., Mičušík, M., Omastová, M., and Hou, T. :Interface engineering HfO2-based 3D vertical ReRAM, J. Phys. D 49 (2016) 215102.

  • 2015

Miranda, E., Hudec, B., Suñé, J., and Fröhlich, K.: Model for the current–voltage characteristic of resistive switches based on recursive hysteretic operators, IEEE Electron Dev. Lett. 36 (2015) 944-946.

Čičo, K., Jančovič, P., Dérer, J., Šmatko, V., Rosová, A., Blaho, M., Hudec, B., Gregušová, D., and Fröhlich, K.: Resistive switching in nonplanar HfO2-based structures with variable series resistance, J. Vacuum Sci Technol. B 33 (2015) 01A108.

Chou, C.-T., Hudec, B., Hsu, C.-W., Lai, W.-L., Chang, C.-C., and Hou, T.-H.: Crossbar array of selector-less TaOx/TiO2 bilayer RRAM, Microelectron. Reliab. 55 (2015) 2220-2223. (Not IEE SAS)

  • 2014

Hudec, B., Paskaleva, A., Jančovič, P., Dérer, J., Fedor, J., Rosová, A., Dobročka, E., and Fröhlich, K.: Resistiveswitching in TiO2-based metal-insulator-metal structures with Al2O3 barrier layer at the metal/dielectric interface, Thin Solid Films 563 (2014) 10-14.

Jančovič, P., Hudec, B., Dobročka, E., Dérer, J., Fedor, J., Fröhlich, K.: Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures, Applied Surface Sci 312 (2014) 112-116.

Aarik, L., Arroval, T., Rammula, R., Mändar, H., Sammelselg, V., Hudec, B., Hušeková, K., Fröhlich, K., and Aarik, J.: Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors, Thin Solid Films 565 (2014) 19-24.

Arroval, T., Aarik, L., Rammula, R., Mändar, H., Aarik, J., Hudec, B., Hušeková, K., and Fröhlich, K.: Influence of growth temperature on the structure and electrical properties of high-permittivity TiO2 films in TiCl4-H2O and TiCl4-O3 atomic-layer-deposition processes, Phys. Status Solidi a 211 (2014) 425-432.

Murakami, K., Rommel, M., Hudec, B., Rosová, A., Hušeková, K., Dobročka, E., Rammula, R., Kasikov, A., Han, J., Lee, W., Song, S., Paskaleva, A., Bauer, A., Frey, L., Fröhlich, K., Aarik, J., and Hwang, C.: Nanoscale characterization of TiO2 films grown by atomic layer deposition on RuO2 electrodes, ACS Applied Mater. Interfaces 6 (2014) 2486-2492.

Paskaleva, A., Hudec, B., Jančovič, P., Fröhlich, K., and Spassov, D.: The influence of technology and switching parameters on resistive switching behavious of Pt/HfO2/TiN MIM structures, Facta Universitas 27 (2014) 621.

Paskaleva, A., Hudec, B., Jančovič, P., and Fröhlich, K.: Resistive switching effects in Pt/HfO2/TiN MIM structures and their dependence on bottom electrode interface engineering. In: IEEE Proc. 29th Inter. Conf. Microelectr. – MIEL 2014. IEEE 2014. ISBN: 978-1-4799-5296-0. P. 285-288.

  • 2013

Hudec, B., Hušeková, K., Rosová, A., Šoltýs, J., Rammula, R., Kasikov, A., Uustare, T., Mičušík, M., Omastová, M., Aarik, J., and Fröhlich, K.: Impact of plasma treatment on electrical properties of TiO2/RuO2 based DRAM capacitor, J. Phys. D 46 (2013) 385304.

Aarik, J., Arroval, T., Aarik, L., Rammula, R., Kasikov, A., Mändar, H., Hudec, B., Hušeková, K., and Fröhlich, K.: Atomic layer deposition of rutile-phase TiO2 on RuO2 from TiCl4 and O3: Growth of high-permittivity dielectrics with low leakage current, J. Crystal Growth 382 (2013) 61-66.

Fröhlich, K., Jančovič, P., Hudec, B., Dérer, J., Paskaleva, A., Bertaud, T., and Schroeder, T.: Atomic layer deposition of thin oxide films for resistive switching, ECS Trans. 58 (2013) 163-170.

  • 2012

Aarik, J., Hudec, B., Hušeková, K., Rammula, R., Kasikov, A., Arroval, T., Uustare, T., and Fröhlich, K.: Atomic layer deposition of high-permittivity TiO2 dielectrics with low leakage current on RuO2 in TiCl4-based processes, Semicond. Sci Technol. 27 (2012) 074007.

Fröhlich, K., Hudec, B., Ťapajna, M., Hušeková, K., Rosová, A., Eliáš, P., Aarik, J., Rammula, R., Kasikov, A., Arroval, T., Aarik, L., Murakami, K., Rommel, M., and Bauer, A.: TiO2-based metal-insulator-metal structures for future DRAM storage capacitors, ECS Transactions 50 (2012) 79-87.

  • 2011

HudecB., Hušeková, K., Tarre, A., Han, J.H., Han, S., Rosová, A., Lee, W., Kasikov, A., Song, S.J., Aarik, J., Hwang, C.S., and Fröhlich, K.: Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes, Microelectr. Engn. 88 (2011) 1514-1516.

Fröhlich, K., HudecB., Aarik, J., Tarre, A., Machajdík, D., Kasikov, A., Hušeková, K., and Gaži, Š.: Post-deposition processing and oxygen content of TiO2-based capacitors, Microelectr. Engn. 88 (2011) 1525-1528.

HudecB., Hušeková, K., Dobročka, E., Aarik, J., Rammula, R., Kasikov, A., Tarre, A., Vincze, A., and Fröhlich, K.: Atomic layer deposition grown metal-insulator-metal capacitors with RuO2 electrodes and Al-doped rutile TiO2 dielectric layer, J. Vacuum Sci Technol. B 29 (2011) 01AC09.

Racko, J., Mikolášek, M., Harmatha, L., Breza, J., HudecB., Fröhlich, K., Aarik, J., Tarre, A., Granzner, R., and Schwierz, F.: Analysis of leakage current mechanisms in RuO2-TiO2-RuO2 MIM structures, J. Vacuum Sci Technol. B 29 (2011) 01AC08.

Fröhlich, K., HudecB., Hušeková, K., Aarik, J., Tarre, A., Kasikov, A., Rammula, R., Vincze, A.: Low equivalent oxide thickness TiO2 based capacitors for DRAM applications, ECS Trans. 41 No.2 (2011) 73.

  • 2010

HudecB., Hušeková, K., Dobročka, E., Lalinský, T., Aarik, J., Aidla, A., and Fröhlich, K.: High-permittivity metal-insulator-metak capacitors with TiO2 rutile dielectric and RuO2 bottom electrode, IOP Conf. Series: Mater. Sci Engn. 8 (2010) 012024.

HudecB., Hranai, M., Hušeková, K., Aarik, J., Tarre, A., and Fröhlich, K.: Resistive switching in RuO2/TiO2/RuO2 MIM structures for non-volatile memory application. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 255-258.

HudecB., Hušeková, K., Aarik, J., Tarre, A., Kasikov, A., and Fröhlich, K.: RuO2/TiO2 based MIM capacitors for DRAM application. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 341-344.

  • 2008

HudecB., Ťapajna, M., Hušeková, K., Aarik, J., Aidla, A., and Fröhlich, K.: Low equivalent oxide thickness metal/insulator/metal structures for DRAM applications. In: ASDAM 2008. The 7th Inter. Conf. Advanced Semicond. Devices Microsyst. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 123-126.