Ing. Filip GUCMANN

  • 2021

Gucmann, F., Kučera, M., Hasenőhrl, S., Eliáš, P., Rosová, A., Dobročka, E., Stoklas, R., and Kuzmík, J.: InN crystal habit, structural, electrical, and optical properties affected by sapphire substrate nitridation in N-polar InN/InAlN heterostructures, Semicond. Sci Technol. 36 (2021) 075025.

Šimkovic, I., Gucmann, F., Mendichi, R., Schieroni, A.G., Piovani, D., Dobročka, E., and Hricovíni, M.: Extraction and characterization of polysaccharide films prepared from Furcellaria lumbricalis and Gigartina skottsbergii seaweeds, Cellulose 28 (2021) 9567–9588.

Mošková, A., Moško, M., Precner, M., Mikolášek, M., Rosová, A., Mičušík, M., Štrbík, V., Šoltýs, J., Gucmann, F., Dobročka, E., and Fröhlich, K.: Doping efficiency and electron transport in Al-doped ZnO films grown by atomic layer deposition, J. Applied Phys. 130 (2021) 035106.

Egyenes-Pörsök, F., Hušeková, K., Dobročka, E., Gucmann, F., and Ťapajna, M.: Optimization of Ohmic contact formation for αlpha-Ga2O3 epitaxial layers grown by MOCVD. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 91-94.

Gucmann, F., Hušeková, K., Dobročka, E., Nádaždy, P., Egyenes-Pörsök, F., and Ťapajna, M.: Growth and properties of ε-Ga2O3 on sapphire substrates. In Proc. 9th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 63-66.

  • 2020

Hasenöhrl, S., Dobročka, E., Stoklas, R., Gucmann, F., Rosová, A., and Kuzmík, J.: Growth and Properties of N-polar InN/InAlN Heterostructures, Phys. Stat. sol (a) 217 (2020) 2000197.

Egyenes-Pörsök, E., Gucmann, F., Hušeková, K., Dobročka, E., Sobota, M., Mikolášek, M., Fröhlich, K., and Ťapajna, M.: Growth of α- and β-Ga2O3 epitaxial layers on sapphire substrates using liquid-injection MOCVD, Semicond. Sci Technol. 35 (2020) 115002.

Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., and Kuzmík, J.: Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs, Applied Surface Sci 528 (2020) 146824.

Šichman, P., Hasenöhrl, S., Stoklas, R., Priesol, J., Dobročka, E., Haščík, Š., Gucmann, F., Vincze, A., Chvála, A., Marek, J., Šatka, A., and Kuzmík, J.: Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure, Mater. Sci Semicond. Process. 118 (2020) 105203.

Chauhan, P., Hasenöhrl, S., Vančo, Ľ., Šiffalovič, P., Dobročka, E., Machajdík, D., Rosová, A., Gucmann, F., Kováč, J.jr., Maťko, I., Kuball, M., and Kuzmík, J.: A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: A complete depth-resolved investigation, CrystEngComm 22 (2020) 130-141.

Kabouche, R., Pecheux, R., Harrouche, K., Okada, E., Medjdoub, F., Derluyn, J., Degroote, S., Germain, M., Gucmann, F., Middleton, C., Pomeroy, J.W., and Kuball, M.: High efficiency AlN/GaN HEMTs for q-band applications with an improved thermal dissipation. In Wide Bandgap Semiconductor Electronics and Devices. Select. Topics in Electron. Systems Vol. 63. Eds. U. Singisetti, T. Razzak, Y. Zhang. World Sci Publ. 2020, ISBN 978-981-121-647-3, pp. 51-62.(Not IEE SAS)

Kučera, M., Hasenőhrl, S., Dobročka, E., Rosová, A., Eliáš, P., Gucmann, F., and Kuzmík, J.: Morphology, crystalline quality, and optical properties of MOCVDgrown InN/InAlN heterostructures. In: ASDAM 2020. Eds. T. Izsák et al. IEEE 2020. ISBN 978-1-7281-9776-0. P. 131-134.

  • 2019

Kabouche, R., Pecheux, R., Harrouche, K., Okada, E., Medjdoub, F., Derluyn, J., Degroote, S., Germain, M., Gucmann, F., Middleton, C., Pomeroy, J.W., and Kuball, M.: High efficiency AlN/GaN HEMTs for q-band applications with an improved thermal dissipation, Inter. J. High Speed Electron. Systems 28 (2019) 1940003. (Not IEE SAS)

Liang, J., Zhou, Y., Masuya, S., Gucmann, F., Singh, M., Pomeroy, J., Kim, S., Kuball, M., Kasu, M., and Shigekawa, N.: Annealing effect of surface-activated bonded diamond/Si interface, Diamond Related Mater. 93 (2019) 187-192. (Not IEE SAS)

Chauhan, P., Hasenöhrl, S., Dobročka, E., Chauvat, M.-P., Minj, A., Gucmann, F., Vančo, Ľ., Kováč, J.jr., Kret, S., Ruterana, P., Kuball, M., Šiffalovič, P., and Kuzmík, J.: Evidence of relationship between strain and In-incorporation: growth of N-polar In-rich InAlN buffer layer by OMCVD, J. Applied Phys. 125 (2019) 105304.

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, Mater. Sci in Semicond Process.  91 (2019) 356-361.

Kuball, M., Pomeroy, J. W., Gucmann, F., and Oner, B.: Thermal analysis of semiconductor devices and materials – Why should I not trust a thermal simulation?. In  IEEE BiCMOS and Compound Semicond. Integrated Circuits Technol. Symp. (BCICTS). Nashville 2019, pp. 1-5. (Not IEE SAS)

  • 2018

Gucmann, F., Ťapajna, M., Pohorelec, O., Haščík, Š., Hušeková, K., and Kuzmík, J.: Creation of two-dinesional electron gas and role of surface donors in III-N metal-oxide-semiconductor high-electron mobility transistors, Phys. Status Solidi A  215 (2018) 1800090.

Kúdela, R., Šoltýs, J., Kučera, M., Stoklas, R., Gucmann, F., Blaho, J., Mičušík, M., Pohorelec, O., Gregor, M., Brytavskyi, I.V., Dobročka, E., and Gregušová, D.: Technology and application of in-situ AlOx layers on III-V semiconductors, Applied Surface Sci 461 (2018) 33-38.

  • 2017

Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Tóth, L., Pecz, B., Brunner, F., Kuzmík, J., : Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties. Applied Surface Sci 426 (2017) 656-661.

Ťapajna, M., Válik, L., Gucmann, F., Gregušová, D., Fröhlich, K., Haščík, Š., Dobročka, E., Tóth, L., Pecz, B., Kuzmík, J., : Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density. J. Vacuum Sci Technol. B 35 (2017) 01A107.

Gucmann, F., Kúdela, R., Rosová, A., Dobročka, E., Micusik, M., Gregušová, D., : Optimization of UV-assisted wet oxidation of GaAs,. J. Vacuum Sci Technol. B 35 (2017) 01A116.

Gregušová, D., Gucmann, F., Kúdela, R., Mičušík, M., Stoklas, R., Válik, L., Greguš, J., Blaho, M., Kordoš, P., : Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment,. Applied Surface Sci 395 (2017) 140-144.

  • 2016

Gucmann, F., Gregušová, D., Válik, L., Ťapajna, M., Haščík, Š., Hušeková, K., Fröhlich, K., Pohorelec, O., Kuzmík, J., : DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric prepared by various techniques In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 9-12.

Ťapajna, M., Hušeková, K., Pohorelec, O., Válik, L., Haščík, Š., Gucmann, F., Fröhlich, K., Gregušová, D., Kuzmík, J., : Effect of HCl pretreatment on the oxide/semiconductor interface state density in AlGaN/GaN MOS-HEMT structures with MOCVD grown Al2O3 gate dielectric In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 207-211.

Ťapajna, M., Válik, L., Gregušová, D., Fröhlich, K., Gucmann, F., Hashizume, T., Kuzmík, J., : Treshold voltage instabilities in AlGaN/GaN MOS-HEMTs with ALD-grown Al2O3 gate dielectrics: relation to distribution of oxide/semiconductor interface state density In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 1-4.

  • 2015

Gucmann, F., Kúdela, R., Dobročka, E., Mičušík, M., Rosová, A., Novák, J., Gregušová, D., : III-As heterostructure field-effect transistors with recessed ex-situ gate oxide In: 18. Škola vákuovej techniky: Nanosvet s vákuom. Bratislava: SVS, 2015. ISBN 978-80-971179-6-2. S. 27-30.

Gucmann, F., Kúdela, R., Kordoš, P., Dobročka, E., Gaži, Š., Dérer, J., Liday, J., Vogrinčič, P., Gregušová, D., : III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O2 plasma-oxidized GaAs cap. J. Vacuum Sci Technol. B 33 (2015) 01A111.

Gregušová, D., Kúdela, R., Gucmann, F., Stoklas, R., Blaho, M., Ťapajna, M., Kordoš, P., Fröhlich, K., : Technology and application of in-situ alox layers on III-V semiconductors. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 58.

  • 2014

Gucmann, F., Kúdela, R., Fröhlich, K., Liday, J., Vogrinčič, P., Gaži, Š., Stoklas, R., Kordoš, P., Novák, J., Gregušová, D., : III-As high electron mobility transistors with recessed ex-situ gate oxide In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 5-8.

Gucmann, F., Gregušová, D., Stoklas, R., Dérer, J., Kúdela, R., Fröhlich, K., Kordoš, P., : InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator. Applied Phys. Lett. 105 (2014) 183504.

Ščepka, T., Šoltýs, J., Precner, M., Fedor, J., Tóbik, J., Gregušová, D., Gucmann, F., Kúdela, R., Cambel, V., : Vortex dynamics in ferromagnetic nanoelements observed by micro-hall probes. Acta Phys. Polonica A 126 (2014) 390-391.

  • 2012

Válik, L., Ťapajna, M., Gucmann, F., Fedor, J., Šiffalovič, P., Fröhlich, K., : Distribution of fixed charge in MOS structures with ALD grown Al2O3 studied by capacitance measurements. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 227-230.

Precner, M., Gregušová, D., Šoltýs, J., Fedor, J., Gucmann, F., Tóbik, J., Kúdela, R., Cambel, V., : Nucleation and annihilation of magnetic vortices in Pacman-like nanodots observed by micro-Hall probes. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 87-90.

Fröhlich, K., Mičušík, M., Dobročka, E., Šiffalovič, P., Gucmann, F., Fedor, J., : Properties of Al2O3 thin films grown by atomic layer deposition. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 171-174.

Rodière, P., Klein, T., Lemberger, L., Hasselbach, K., Demuer, A., Kačmarčík, J., Wang, Z., Luo, H., Lu, X., Wen, H., Gucmann, F., Marcenat, C., : Scaling of the physical properties in Ba(Fe,Ni)2As2 single crystals: Evidence for quantum fluctuations. Phys. Rev. B 85 (2012) 214506.

Gregušová, D., Kúdela, R., Stoklas, R., Blaho, M., Gucmann, F., Fedor, J., Kordoš, P., : The influence of an AlOx film in-situ deposited on the GaAs-based HFETs properties. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 107-110.