Ing. Gabriel VANKO, PhD.

  • 2019

Sojková, M., Šiffalovič, P., Babchenko, O., Vanko, G., Dobročka, E., Hagara, J., Mrkývková, N., Majková, E.,  Ižák, T., Kromka, A., and Hulman, M.: Carbide-free one-zone sulfurization method grows thin MoS2 layers on polycrystalline CVD diamond, Sci Rep. 9 (2019) 2001.

Sojková, M., Šiffalovič, P., Babchenko, O., Vanko, G., Dobročka, E., Hagara, J., Mrkývková, N., Majková, E., Ižák, T., Kromka, A., and Hulman, M.: Carbide-free one-zone sulfurization method grown thin MOS2 layers on polycrystalline CVD diamond. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 281-284.

Zehetner, J., Vanko, G., and Kasemann, S.: Femtosecond laser ablation supported fabrication of surface structures for sensor and fluidic devices. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 259-262.

  • 2018

Babchenko, O., Vanko, G., Gerboc, M., Ižák, T., Vojs, M., Lalinský, T., and Kromka, A.: Study on electronic properties of diamond/SiNx-coated AlGaN/GaN high electron mobility transistors operating up to 500 °C, Diamond Related Mater. 89 (2018) 266-272.

Osvald, J., Lalinský, T., and Vanko, G.: High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes, Applied Surface Sci 461 (2018) 206-211.

Zehetner, J., Kasemann, S., Vanko, G., and Babchenko, O.: Black titanium dioxide in situ generated on femtosecond laser induced periodic surface structures. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 203-206.

  • 2017
Dubecký, F., Vanko, G., Zaťko, B., Kováč, J., Gombia, E., Ferrari, C., Šagátová, A., Nečas, V., : 4H-SiC radiation hard photodetector for UV photons and soft X-rays In: Proc. 23th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2017). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2017. ISBN 978-80-227-4699-1. P. 23-27.. (VEGA 2/0152/16). (APVV 0321-11). (ITMS 26220220170).

Lalinský, T., Vanko, G., Dobročka, E., Osvald, J., Babchenko, O., Dzuba, J., Veselý, M., Vančo, Ľ., Vogrinčič, P., and Vincze, A.: Ir/Al multilayer gates for high temperature operated AlGaN/GaN HEMTs, Phys. Status Solidi A 214 (2017) 1700691.

Dubecký, F., Kindl, D., Hubík, P., Mičušík, M., Dubecký, M., Boháček, P., Vanko, G., Gombia, E., Nečas, V., Mudroň, J., : A comparative study of Mg and Pt contacts on semi-insulating GaAs: electrical and XPS characterization. Applied Surface Sci 395 (2017) 131-135. (VEGA 2/0167/13). (VEGA 2/0152/16). (EURATOM/CU). (CENTE).

 

Osvald, J., Lalinský, T., Vanko, G., : Analysis of current transport in gate oxide based (MOS) Schottky diodes on GaN/AlGaN/GaN In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 52-55. (VEGA 2/0112/17). (APVV 14-0613). (CENTE II).

 

Zehetner, J., Kasemann, S., Vanko, G., Dzuba, J., Lalinský, T., Nürnberger, S., : Micro structuring of diaphragms for III-N MEMS using short pulsed laser ablation In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 287-290.. (SASPRO 0068/01/01). (APVV 14-0613). (VEGA 2/0150/17).

 

Babchenko, O., Dzuba, J., Lalinský, T., Vojs, M., Vincze, A., Ižák, T., Vanko, G., : Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment,. Applied Surface Sci 395 (2017) 92-97.. (SASPRO 0068/01/01). (APVV 0455-12). (CENTE).

 

Kutiš, V., Paulech, J., Gálik, G., Lalinský, T., Vanko, G., Hrabovský, J., Jakubec, J., : Thermal analysis of microbolometer In: Proc. 23th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2017). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2017. ISBN 978-80-227-4699-1. P. 267-271.. (APVV 14-0613).

 

Lalinský, T., Dzuba, J., Vanko, G., Kutiš, V., Paulech, J., Gálik, G., Držík, M., Chromik, Š., Lobotka, P., :Thermo-mechanical analysis of uncooled La0.67Sr0.33MnO3 microbolometer made on circular SOI membrane. Sensors Actuators A 265 (2017) 321–328. (APVV 14-0613). (APVV 0450-10). (APVV 0455-12). (CENTE II).

 

Osvald, J., Vanko, G., Chow, L., Chen, N., Chang, L., : Transition voltage of AlGaN/GaN heterostructure MSM varactor with two-dimensional electron gas. Microelectron. Reliab. 78 (2017) 243–248. (VEGA 2/0112/17). (APVV 14-0613).

 

  • 2016
Lalinský, T., Vanko, G., Dzuba, J., Kutiš, V., Gálik, G., Paulech, J., Držík, M., Chromik, Š., and Lobotka, P.: Thermo-mechanical analysis of uncooled La0.67Sr0,33MnO3 microbolometer made on circular SOI membrane, Procedia  Engn. 168 (2016) 733-736.

Dubecký, F., Vanko, G., Kindl, D., Hubík, P., Gombia, E., Boháček, P., Sekáčová, M., Zaťko, B., : Investigation of metal contacts on semi-insulating GaAs: physics, technology and applications In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 219-222. (VEGA 2/0167/13). (VEGA 2/0152/16). (APVV 0321-11). (ITMS 26220220170).

 

Zehetner, J., Kraus, S., Lucki, M., Vanko, G., Dzuba, J., Lalinský, T., : Manufacturing of membranes by laser ablation in SiC, sapphire, glass and ceramic for GaN/ferroelectric thin film MEMS and pressure sensors. Microsyst. Technol. 22 (2016) 1883-1892. (SK-AT-0019-10). (APVV 0455-12).

 

Zehetner, J., Vanko, G., Dzuba, J., Lalinský, T., Lucki, M., Kraus, S., : Micro structuring of bulk SiC substrates by femtosecond laser ablation. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 302-305. (SK-AT-0019-10). (APVV 0450-10).

 

Zehetner, J., Vanko, G., Dzuba, J., Lalinský, T., : Nanostructuring of bulk Si and SiC substrates by femtosecond laser ablation for membrane fabrication and surgace functionalization In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 223-226.

 

Kováč, T., Horvát, F., Čekan, M., Hučko, B., Szarvas, M., Dzuba, J., Vanko, G., : Numerical solution of aluminum galium nitride membrane in finite element analysis In: APLIMAT 2016. Eds. D. Richtarikova et al. Bratislava: STU 2016. ISBN: 978-802274531-4. P. 700-710.

 

Babchenko, O., Vanko, G., Dzuba, J., Ižák, T., Vojs, M., Lalinský, T., Kromka, A., : Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition process In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 157-160. (SASPRO 0068/01/01). (APVV 0455-12).

 

Dzuba, J., Vanko, G., Babchenko, O., Lalinský, T., Horvát, F., Szarvas, M., Kováč, T., Hučko, B., : Strain induced response of AlGaN/GaN high electron mobility transistor located on cantilever and membrane In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 227-230. (APVV 14-0613). (APVV 0455-12). (VEGA 1/0712/14).

 

Ižák, T., Jirásek, V., Vanko, G., Dzuba, J., Kromka, A., : Temperature-dependent stress in diamond-coatewd AlGaN/GaN heterostructures. Mater. & Design 106 (2016) 305-312. (APVV 0455-12).

 

  • 2015
Chromik, Š., Štrbik, V., Španková, M., Lalinský, T., Vanko, G., Lobotka, P., Beňačka, Š., : Advanced perovskite thin films and structures for applications. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 64-67.. (APVV-0494-11). (APVV 14-0613). (VEGA 2/0120/14). (VEGA 2/0173/13).

 

Dzuba, J., Vanko, G., Držík, M., Rýger, I., Kutiš, V., Zehetner, J., Lalinský, T., : AlGaN/GaN diaphragm-based pressure sensor with direct high performance piezoelectric transduction mechanism. Applied Phys. Lett. 107 (2015) 122102. (APVV 0455-12). (APVV 0450-10). (VEGA 1/0712/14).

 

Michniak, P., Marton, M., Behú, M., Redhammer, R., Vanko, G., : Analysis of carbon nanowals prepared by hot filament chemical vapour deposition In: NANOCON 2015. Tanger: 2015. ISBN: 978-808729463-5. P. 143-148.

 

Vanko, G., Ižák, T., Babchenko, O., Kromka, A., : Diamond coated AlGaN/GaN high electron mobility transistors – effect of deposition process on gate electrode In: NANOCON 2015. Tanger: 2015. ISBN: 978-808729463-5. P. 168-173.

 

Ižák, T., Vanko, G., Babchenko, O., Potocký, Š., Marton, M., Vojs, M., Choleva, P., Kromka, A., : Diamond-coated three-dimensional GaN micromembranes: Effect of nucleation and deposition techniques,. Phys. Status Solidi B 252 (2015) 2585–2590.. (APVV 0455-12). (SASPRO 0068/01/01).

 

Dzuba, J., Vanko, G., Vojs, M., Rýger, I., Ižák, T., Jirásek, V., Kutiš, V., Lalinský, T., : Finite element analysis of AlGaN/GaN micro-diaphragms with diamond Proc. SPIE 9517 (2015) 95171I..

 

Rýger, I., Vanko, G., Lalinský, T., Haščík, Š., Benčurová, A., Nemec, P., Andok, R., Tomáška, M., : GaN/SiC based surface acoustic wave structures for hydrogen sensors with enhanced sensitivity. Sensors Actuators A 227 (2015) 55-62. (CENTE). (APVV 0199-10). (APVV 0450-10). (VEGA 1/0839/12).

 

Ižák, T., Babchenko, O., Jirásek, V., Vanko, G., Vojs, M., Kromka, A., : Influence of diamond CVD growth conditions and interlayer material on diamond/GaN interface. Mater. Sci Forum 821-823 (2015) 982-985.(APVV 0455-12).

 

Lalinský, T., Vanko, G., Dobročka, E., Vincze, A., Dzuba, J., Babchenko, O., : Ir/Al multilayer systems for high temperature stable gates of AlGaN/GaN HEMTs. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 91-92.. (VEGA 1/0839/12). (APVV 0455-12). (SASPRO 0068/01/01).

 

Zehetner, J., Vanko, G., Dzuba, J., Rýger, I., Lalinský, T., Benkler, M., Lucki, M., : Laser ablation for membrane processing of AlGaN/GaN- and micro structured ferroelectric thin film MEMS and SiC pressure sensors for extreme conditions Proc. SPIE 9517 (2015) 951721.

 

Vanko, G., Dzuba, J., Rýger, I., Vallo, M., Lalinský, T., : MEMS pressure sensor with an AlGaN/GaN based high electron mobility transistor In: NSTI: Advanced Materials – TechConnect Briefs 2015. Eds. B. Romanowicz, M. Laudon. Taylor and Francis: 2015. ISBN: 978-149874730-1. P. 290-293.

 

Babchenko, O., Vojs, M., Dzuba, J., Lalinský, T., Vanko, G., : Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 20-21..(APVV 0455-12). (SASPRO 0068/01/01).

 

Dzuba, J., Držík, M., Ižák, T., Vojs, M., Babchenko, O., Lalinský, T., Kutiš, V., Jirásek, V., Kromka, A.,Vanko, G., : Stress analysis in diamond-coated AlGaN/GaN diaphragms for MEMS pressure sensors. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 44.

 

Dzuba, J., Vanko, G., Držík, M., Rýger, I., Vallo, M., Kutiš, V., Haško, D., Choleva, P., Lalinský, T., : Stress investigation of the AlGaN/GaN micromachined circular diaphragms of a pressure sensor. J. Micromech. Microengn. 25 (2015) 015001.. (APVV 0455-12). (APVV 0450-10). (VEGA 1/0712/14).

 

Ižák, T., Jirásek, V., Vanko, G., Dzuba, J., Kromka, A., : Temperature-dependent stress in diamond-coated AlGaN/GaN heterostructures. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 68-69..(APVV 0455-12).

 

  • 2014
Vanko, G., Vojs, M., Ižák, T., Potocký, P., Choleva, P., Marton, M., Rýger, I., Dzuba, J., Lalinský, T., : AlGaN/GaN micromembranes with diamond coating for high electron mobility transistors operated at high temperatures In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 263-266.. (APVV 0455-12). (APVV 0199-10). (VEGA 2/0167/13).

 

Rýger, I., Vanko, G., Lalinský, T., Dzuba, J., Vallo, M., Kunzo, P., Vávra, I., : Enhanced sensitivity of Pt/NiO gate based AlGaN/GaN C-HEMT hydrogen sensor Key Engn. Mater. 605 (2014) 491-494. (APVV 0450-10). (APVV 0199-10). (APVV 0655-07). (VEGA 2/0167/13). (VEGA 1/0839/12).

 

Osvald, J., Vanko, G., Fröhlich, K., : Frequency dependent capacitance of insulator GaN/AlGaN/GaN heterostructure In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 221-224.(VEGA 2/0167/13). (APVV 0450-10). (APVV 0199-10). (APVV 0455-12).

 

Dzuba, J., Vanko, G., Rýger, I., Vallo, M., Kutiš, V., Lalinský, T., : Influence of temperature on the sensitivity of the AlGaN/GaN C HEMT based piezoelectric pressure sensor In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 5-8.. (APVV 0455-12). (APVV 0450-10).

 

Chromik, Š., Štrbik, V., Dobročka, E., Roch, T., Rosová, A., Španková, M., Lalinský, T., Vanko, G., Lobotka, P., Ralbovský, M., Choleva, P., : LSMO thin films with high metal-insulator transition temperature on buffered SOI substrates for uncooled microbolometers. Applied Surface Sci 312 (2014) 30-33. (APVV-0494-11). (SK-CN-0012-12). (VEGA 2/0120/14). (VEGA 2/0173/13). . (CENTE II).

 

Dubecký, F., Zaťko, B., Vanko, G., Hubík, P., Oswald, J., Kindl, D., Gombia, E., Kováč, J., Šagátová, A., Nečas, V., : M/SI-GaAs/M diode: role of the metal contact in electrical transport, ɑ-particle and photon detection In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 49-52.. (VEGA 2/0062/13). (VEGA 2/0175/13). (APVV 0321-11). (EURATOM FU-CT-2007-00051).

 

Dzuba, J., Držík, M., Vanko, G., Rýger, I., Vallo, M., Kutiš, V., Lalinský, T., : Modal analysis of Gallium Nitride membrane for pressure sensing device Key Engn. Mater. 605 (2014) 404-407. (APVV 0450-10). (APVV 0199-10). (APVV 0655-07). (VEGA 2/0167/13). (VEGA 1/0839/12).

 

Vanko, G., Dzuba, J., Rýger, I., Lalinský, T., Vojs, M., Vincze, A., Dobročka, E., : Processing technology of MEMS sensors using III-N material system In: 17. škola vákuovej techniky: Analýza materiálov vo vákuu. Material analysis in vacuum. Eds. M. Michalka et al. Bratislava: FEI STU 2014. ISBN 978-80-971179-4-8. P. 39-43. (APVV 0455-12). (APVV 0450-10).

 

Rýger, I., Vanko, G., Lalinský, T., Kunzo, P., Vallo, M., Vávra, I., Plecenik, T., : Pt/NiO ring gate based Schottky diode hydrogen sensors with enhanced sensitivity and thermal stability. Sensors Actuators B 202 (2014) 1-8. (APVV 0450-10). (APVV 0199-10). (APVV 0655-07). (VEGA 2/0167/13). (VEGA 1/0839/12).

 

Ižák, T., Babchenko, O., Jirásek, V., Vanko, G., Vallo, M., Vojs, M., Kromka, A., : Selective area deposition of diamond films on AlGaN/GaN heterostructures. Phys. Status Solidi B 251 (2014) 2574-2580. (APVV 0455-12).

 

Dzuba, J., Vanko, G., Držík, M., Rýger, I., Vallo, M., Lalinský, T., Kutiš, V., Haško, D., Srnánek, R., : The AlGaN/GaN C-HEMT diaphragm-based MEMS pressure sensor for harsh environment In: 17. škola vákuovej techniky: Analýza materiálov vo vákuu. Material analysis in vacuum. Eds. M. Michalka et al. Bratislava: FEI STU 2014. ISBN 978-80-971179-4-8. P. 142-145. (APVV 0455-12). (APVV 0450-10).

 

Rýger, I., Vanko, G., Lalinský, T., Haščík, Š., Nemec, P., Benčurová, A., Tomáška, M., : The GaN/SiC heterostructure-based hydrogen SAW sensor operating in GHz range. Procedia Engn. 87 (2014) 260-263.(APVV 0199-10). (VEGA 1/0839/12).

 

Zehetner, J., Vanko, G., Choleva, P., Dzuba, J., Rýger, I., Lalinský, T., : Using of laser ablation technique in the processing technology of GaN/SiC based MEMS for extreme conditions In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 259-262.

 

  • 2013
Dubecký, F., Kováč, J., Kováč, J., Zaťko, B., Osvald, J., Hubík, P., Kindl, D., Vanko, G., Gombia, E., Ferrari, C., Boháček, P., Šagátová, A., Nečas, V., Sekáčová, M., : 4H-SiC and novel SI GaAs-based M-S-M radiation hard photodetectors applicable in UV, EUV and soft X-ray detection: design, technology and performance testing, Proc. SPIE 8777B (2013) 8777-56.

 

Vanko, G., Lalinský, T., Ižák, T., Vojs, M., Vincze, A., Dobročka, E., Vallo, M., Dzuba, J., Rýger, I., Kromka, A., : AlGaN/GaN high electron mobility transistors for high temperatures In: Perspektívne vákuové metódy a technológie: 16. škola vákuovej techniky. Eds. M. Vojs, M. Veselý. Bratislava: Slov. vákuová spol. 2013. ISBN 978-80-971179-2-4. S. 55-59. (APVV 0455-12). (APVV 0199-10). (VEGA 1/0839/12).

 

Vanko, G., Hudek, P., Dzuba, J., Choleva, P., Kutiš, V., Vallo, M., Rýger, I., Lalinský, T., : Bulk micromachining of SiC substrate for MEMS sensor applications. Microelectron. Engn. 110 (2013) 260-264.(SK-AT-0019-10). (APVV 0450-10). (APVV 0199-10). (VEGA-2-0163-09).

 

Le Boulbar, E., Edwards, M., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C., Allsopp, D., : Effect of bias conditions on pressure sensors based on AlGaN/GaN high electron mobility transistor. Sensors Actuators A 194 (2013) 247-251. (MORGaN).

 

Vallo, M., Lalinský, T., Dobročka, E., Vanko, G., Vincze, A., Rýger, I., : Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT,. Applied Surface Sci 267 (2013) 159-163. (MORGaN). (APVV 0450-10). (APVV 0655-07). (APVV 0199-10). (VEGA-2-0163-09).

 

Lalinský, T., Vallo, M., Vanko, G., Dobročka, E., Vincze, A., Osvald, J., Rýger, I., Dzuba, J., : Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation. Applied Surface Sci 283 (2013) 160-167. (APVV 0450-10). (APVV 0199-10). (VEGA 1/0839/12).

 

Vanko, G., Hudek, P., Zehetner, J., Dzuba, J., Choleva, P., Vallo, M., Rýger, I., Lalinský, T., : MEMS pressure sensor fabricated by advanced bulk micromachining techniques, Proc. SPIE 8763 (2013) 8763-101.

 

Jirásek, V., Ižák, T., Babchenko, O., Kromka, A., Vanko, G., : Modeling of thermal stress induced during the diamond-coating of AlGaN/GaN high electron mobility transistors Advanced Sci, Engn. Medicine 5 (2013) 522-526.

 

Florovič, M., Kováč, J., Hronec, P., Škriniarová, J., Donoval, D., Lalinský, T., Vanko, G., : On-state stress investigation of AlGaN/GaN HEMT. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 44-47.

 

Ižák, T., Jirásek, V., Vanko, G., Babchenko, O., Varga, M., Kromka, A., : Perspectives and challenges in „Diamant-on-GaN“ In: Perspektívne vákuové metódy a technológie: 16. škola vákuovej techniky. Eds. M. Vojs, M. Veselý. Bratislava: Slov. vákuová spol. 2013. ISBN 978-80-971179-2-4. S. 37-41.

 

Vincze, A., Vallo, M., Dobročka, E., Rýger, I., Vanko, G., Lalinský, T., : SIMS and XRD analysis on Ir contact layers for AlGaN/GaN HEMT structures. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 295-298. (APVV 0450-10).

 

  • 2012
Rýger, I., Vanko, G., Kunzo, P., Lalinský, T., Vallo, M., Plecenik, A., Satrapinskyy, L., Plecenik, T., :AlGaN/GaN HEMT based hydrogen sensors with gate absorption layers formed by high temperature oxidation. Procedia Engn. 47 (2012) 518-521. (APVV 0450-10). (APVV 0199-10). (VEGA-2-0163-09).

 

Lalinský, T., Vanko, G., Vallo, M., Dobročka, E., Rýger, I., Vincze, A., : AlGaN/GaN high electron mobility transistors with nickel oxide based gates formed by high temperature oxidation. Applied Phys. Lett. 100 (2012) 092105. (MORGaN). (APVV 0450-10). (APVV 0199-10). (APVV 0655-07). (VEGA-2-0163-09).

 

Rýger, I., Tomáška, M., Vanko, G., Lalinský, T., : An AlGaN/GaN based GHz-range surface acoustic wave oscillator for sensor applications. . In: Proc. 22nd Inter. Conf. Radioelektronika 2012. Eds. R. Balada et al. Brno: Univ. Technol. 2012. ISBN 978-80-214-4468-3. P. 279-282.

 

Vanko, G., Vallo, M., Rýger, I., Dzuba, J., Lalinský, T., : Conductive metal oxide based gates for self aligned technology of AlGaN/GaN HEMT. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 19-22.

 

Rýger, I., Vanko, G., Kunzo, P., Lalinský, T., Dzuba, J., Vallo, M., Satrapinskyy, L., Plecenik, T., Chvála, A., : Gates of AlGaN/GaN HEMT for high temperature gas sensing applications. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 23-26.

 

Dubecký, F., Gombia, E., Ferrari, C., Zaťko, B., Vanko, G., Baldini, M., Kováč, J., Baček, D., Kováč, P., Hrkút, P., Nečas, V., : Characterization of epitaxial 4H-SiC for photon detectors. J. Instrument. 7 (2012) P09005. (VEGA 2/0192/10). (VEGA 2/0153/10). (APVV 0450-10).

 

Mikolášek, M., Zhang, D., Vanko, G., Kováč, J., Zeman, M., Harmatha, L., : Impact of interface passivation on the band alignment of a-Si:H(n)/c-Si(p) heterostructure solar cells. In: Proc. 27th Europ. Photovoltaic Solar Energy Conf. and Exhibition. Frankfurt 2012. P. 1534-1537.

 

Vanko, G., Vallo, M., Bruncko, J., Lalinský, T., : Laser ablated ZnO layers for ALGaN/GaN HEMT passivation. Vacuum 86 (2012) 672-674. (APVV 0655-07). (VEGA-2-0163-09).

 

Vanko, G., Zehetner, J., Choleva, P., Lalinský, T., Hudek, P., : Laser ablation: A supporting technique to bulk micromachining of SiC. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 259-262.

 

Lalinský, T., Hudek, P., Vanko, G., Dzuba, J., Kutiš, V., Srnánek, R., Choleva, P., Vallo, M., Držík, M., Matay, L., Kostič, I., : Micromachined membrane structures for pressure sensors based on AlGaN/GaN circular HEMT sensing device. Microelectron. Engn. 98 (2012) 578–581. (APVV 0655-07). (APVV 0450-10). (APVV 0199-10). (VEGA-2-0163-09).

 

Dzuba, J., Lalinský, T., Vanko, G., Vallo, M., Rýger, I., Kutiš, V., Královič, V., : Modeling and simulation of AlGaN/GaN piezoelectric MEMS pressure sensor. In: 13th Mechatronics Forum Inter. Conf. – Mechatronics 2012. Linz 2012. P. 773-778.

 

Dubecký, F., Príbytný, P., Vanko, G., Zaťko, B., Gombia, E., Baldini, M., Hrkút, P., Nečas, V., Donoval, D., : Novel concepts of soft X-ray detector based on semi-insulating GaAs. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 29-32.

 

Edwards, M., Le Boulbar, E., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C., Allsopp, D., : Pressure and temperature dependence of GaN/AlGaN HEMT based sensors on a sapphire membrane,. Phys. Status Solidi c 9 (2012) 960-963. (MORGaN).

 

Vincze, A., Držík, M., Michalka, M., Bruncko, J., Vallo, M., Vanko, G., Lalinský, T., : SIMS depth profiling of metallization contact layers for AlGaN/GaN heterostructures. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 231-234.

 

Dubecký, F., Gombia, E., Vanko, G., Ferrari, C., Zaťko, B., Kováč, P., Baček, D., Baldini, M., Ryć, L., Nečas, V., : Surface barrier 4H-SiC soft X-ray detector for hot plasmas diagnostic. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 247-250.

 

  • 2011
Rýger, I., Vanko, G., Lalinský, T., Vallo, M., Tomáška, M., Ritomský, A., : AlGaN/GaN based SAW-HEMT devices for chemical gas sensors operating in GHz range. Procedia Engn. 25 (2011) 1101-1104. (APVV 0655-07). (APVV 0450-10). (APVV 0199-10). (VEGA-2-0163-09).

 

Vanko, G., Držík, M., Vallo, M., Lalinský, T., Kutiš, V., Stančík, S., Rýger, I., Benčurová, A., : AlGaN/GaN C-HEMT structures for dynamic stress detection. Sensors Actuators A 172 (2011) 98-102. (APVV 0655-07). (MORGaN). (VEGA-2-0163-09).

 

Mikolášek, M., Prusaková, L., Matay, L., Řeháček, V., Jakabovič, J., Vanko, G., Kotlár, M., Harmatha, L., : Determination of the conduction band offset in the a-Si:H/c-Si heterojunction structures from coplanar temperature current-voltage measurements. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 184-187.

 

Lalinský, T., Vanko, G., Vincze, A., Haščík, Š., Osvald, J., Donoval, D., Tomáška, M., Kostič, I., : Effect of fluorine interface redistribution on performance of AlGaN/GaN HEMTs. Microelectr. Engn. 88 (2011) 166-169.

 

Dubecký, F., Gombia, E., Vanko, G., Ferrari, C., Baldini, M., Ryć, L., Zaťko, B., Nečas, V., : Characterization of epitaxial 4H-SiC as a material for spectrometric radiation detectors. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 240-243.

 

Lalinský, T., Vanko, G., Vallo, M., Držík, M., Bruncko, J., Jakovenko, J., Kutiš, V., Rýger, I., Haščík, Š., Husák, M., : Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor. Sensors Actuators A 172 (2011) 386-391. (APVV 0655-07). (MORGaN). (VEGA-2-0163-09).

 

Lalinský, T., Hudek, P., Vanko, G., Choleva, P., Vallo, M., Matay, L., Kostič, I., Držík, M., : Micromachined pressure sensors based on AlGaN/GaN circular HEMT sensing devices In: 37th Inter. Conf. Micro Nano Engn. – MNE 2011. Berlin 2011.

 

Lalinský, T., Držík, M., Vanko, G., Vallo, M., Kutiš, V., Bruncko, J., Haščík, Š., Jakovenko, J., Husák, M., :Piezoelectric response of AlGaN/GaN-based circular-HEMT structures. Microelectr. Engn. 88 (2011) 2424-2426.

 

  • 2010
Lalinský, T., Rýger, I., Vanko, G., Tomáška, M., Kostič, I., Haščík, Š., Vallo, M., : AlGaN/GaN based SAW-HEMT structures for chemical gas sensors, Procedia Engn. 5 (2010) 152-155.

 

Vallo, M., Lalinský, T., Vanko, G., Držík, M., Haščík, Š., Rýger, I., Kostič, I., : AlGaN/GaN C-HEMT for piezoelectric MEMS stress sensor appliocations. In.: MME 2010. Eds. L. Abelmann et al. Enschede: Univ. Twente 2010. ISBN 978-90-816737-1-6. P. 56-59.

 

Vanko, G., Držík, M., Vallo, M., Lalinský, T., Kutiš, V., Stančík, S., Rýger, I., Kostič, I., : AlGaN/GaN C-HEMT structures for dynamic stress detection. Procedia Engn. 5 (2010) 1405-1408.

 

Osvald, J., Lalinský, T., Vanko, G., Haščík, Š., Vincze, A., : C–V analysis of rapidly thermal annealed SF6 plasma treated AlGaN/GaN heterostructures. Applied Surface Sci 257 (2010) 1254-1256.

 

Osvald, J., Lalinský, T., Vanko, G., Haščík, Š., Vincze, A., : C–V characterization of SF6 plasma treated AlGaN/GaN heterostructures. Microelectr. Engn. 87 (2010) 2208-2210. (VEGA-2-0163-09).

 

Rýger, I., Lalinský, T., Vanko, G., Tomáška, M., Kostič, I., Haščík, Š., Vallo, M., : HEMT-SAW structures for chemical gas sensors in harsh environment In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 131-134.

 

Liday, J., Vogrinčič, P., Hotový, I., Bonanni, A., Sitter, H., Lalinský, T., Vanko, G., Řeháček, V., Breza, J., Ecke, G., : Ohmic contacts to p-GaN using Au/Ni-Mg-O metallization. J. Electr. Engn. 61 (2010) 378-381.

 

  • 2009
Jakovenko, J., Lalinský, T., Držík, M., Ivanova, M., Vanko, G., Husák, M., : GaN, GaAs and silicon based micromechanical free standing hot plates for gas sensing. Procedia Chemistry 1 (2009) 804-807. (APVV 0655-07).

 

Vanko, G., Lalinský, T., Haščík, Š., Rýger, I., Mozolová, Ž., Škriniarová, J., Tomáška, M., Kostič, I., Vincze, A., : Impact of SF6 plasma treatment on performance of AlGaN/GaN HEMT. Vacuum 84 (2009) 235-237.(APVV 0655-07).

 

Lalinský, T., Rýger, I., Rufer, L., Vanko, G., Haščík, Š., Mozolová, Ž., Škriniarová, J., Tomáška, M., Kostič, I., Vincze, A., : Surface acoustic wave excitation on SF6 plasma-treated AlGaN/GaN heterostructure. Vacuum 84 (2009) 231-234.

 

  • 2008
Lalinský, T., Vanko, G., : Advanced microelectronic and micro-electro-mechanical structures based on AlGaN/GaN material systems. In: Vzájomná spolupráca pracovísk = kvalitný výskum, Zamerané na vákuové technológie. Škola vákuovej techniky. Bratislava: Slov. vákuová spoločnosť, 2008. ISBN 978-80-969435-4-8. P. 64-69.

 

Lalinský, T., Rufer, L., Vanko, G., Mir, S., Haščík, Š., Mozolová, Ž., Vincze, A., Uherek, F., : AlGaN/GaN heterostructure-based surface acoustic wave-structures for chemical sensors. Applied Surface Sci 255 (2008) 712-714.

 

Lalinský, T., Držík, M., Jakovenko, J., Vanko, G., Mozolová, Ž., Haščík, Š., Chlpík, J., Hotový, I., Řeháček, V., Kostič, I., Matay, L., Husák, M., : GaAs based micromachined thermal converter for gas sensors. Sensors Actuators A 142 (2008) 147-152.

 

Hotový, I., Řeháček, V., Mika, F., Lalinský, T., Haščík, Š., Vanko, G., Držík, M., : Gallium arsenide suspended microheater for MEMS sensor arrays Microsyst. Technol. 14 (2008) 629-635.

 

Tomáška, M., Lalinský, T., Vanko, G., Mišun, M., : High frequency characterization and properties of AlGaN/GaN HEMT structures. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 331-334.

 

Vanko, G., Lalinský, T., Tomáška, M., Haščík, Š., Mozolová, Ž., Škriniarová, J., Kostič, I., Vincze, A., Uherek, F., : Impact of SF6 plasma on DC and microwave performance of AlGaN/GaN HEMT structures. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 335-338.

 

Tomáška, M., Lalinský, T., Vanko, G., Mišun, M., : Microwave characterization and properties of 2 µm gate length AlGaN/Gan HEMT structures. In: COMITE 2008 Praha: Čs. sekce IEEE, 2008. 350 p. ISBN 978-1-4244-2137-4. P. 317-320.

 

Vanko, G., Lalinský, T., Mozolová, Ž., Liday, J., Vogrinčič, P., Vincze, A., Uherek, F., Haščík, Š., Kostič, I., :Nb-Ti/Al/Ni/Au based ohmic contacts to AlGaN/GaN. Vacuum 82 (2008) 193-196.

 

Haščík, Š., Hotový, I., Lalinský, T., Vanko, G., Řeháček, V., Mozolová, Ž., : Preparation of thin GaAs suspended membranes for gas microsensors using plasma etching. Vacuum 82 (2008) 236-239.

 

Lalinský, T., Rufer, L., Vanko, G., Rýger, I., Haščík, Š., Tomáška, M., Mozolová, Ž., Vincze, A., : Surface acoustic wave excitation on SF6 plasma treated AlGaN/GaN heterostructure. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 311-314.

 

  • 2007
Jakovenko, J., Husák, M., Lalinský, T., Držík, M., Vanko, G., : Design and modeling of GaAs based hot plate for Gas sensors. In: DTIP 2007. Ed. K.Chakrabarty et al. EDA Publishing, 2007. ISBN 978-2-35500-000-3. P. 147-150.

 

  • 2006
Rufer, L., Lalinský, T., Grobelny, D., Mir, S., Vanko, G., Öszi, Z., Mozolová, Ž., : GaAs and GaN based SAW chemical sensors: acoustic part design and technology. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 165-168.

 

Lalinský, T., Vanko, G., Grujbár, M., Mozolová, Ž., Haščík, Š., Kostič, I., : Nb-Ti/Al/Ni/Au ohmic metallic system to AlGaN/GaN. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 151-154.

 

  • 2005
Lalinský, T., Vanko, G., Gregušová, D., Mozolová, Ž., Haščík, Š., Kordoš, P., : Schottky gate contacts for AlGaN/GaN based HEMTs. In: Proc. IMAPS CS Inter. Conf. EDS’05. Brno: VUT 2005. P. 242-247. ISBN 80-214-2990-9.