Ing. Gabriel VANKO, PhD.

  • 2021

Izsák, T., Vanko, G., Babchenko, O., Vincze, A., Vojs, M., Zaťko,  B., and Kromka, A.: Influence of SiON interlayer on the diamond/GaN heterostructures studied by Raman and SIMS measurements, Mater. Sci Engn. B 273 (2021) 115434.

Rýger, I., Lobotka, P., Steiger, A., Chromik, Š., Lalinský, T., Raida, Z., Pítra, K., Zehetner, J., Španková, M., Gaži, Š., Sojková, M., and Vanko, G.: Uncooled antenna-coupled microbolometer for detection of terahertz radiation, J. Infrared, Millimet., Terahertz Waves 42 (2021) 462–478.

  • 2020

Izsák, T., Vanko, G., Držík, M., Kasemann, S., Zehetner, J., Vojs, M., Zaťko,  B., Potocký, Š., and Kromka, A.: Direct deposition of CVD diamond layers on the top of GaN membranes, Proceedings 56 (2020), Iss 1, no. 35.

Zehetner, J., Kromka, A., Izsák, T., Vanko, G., Gajdošová, L., and Kasemann, S.: Fabrication of diamond membranes by femtosecond laser ablation for MEMS sensor applications,  Proceedings 56 (2020), Iss 1, p. 13.

Izsák, T., Vanko, G., Držík, M., Kasemann, S., Zehetner, J., Vojs, M., Zaťko,  B., Potocký, Š., and Kromka, A.: Front-side diamond deposition on the GaN membranes. In: ASDAM 2020. Eds. T. Izsák et al. IEEE 2020. ISBN 978-1-7281-9776-0. P. 42-45.

Babcenko, O., Izsák, T., Varga, M., Aubrechtová Dragounová, K., Potocky, S., Stehlik, S., Vanko, G., Gajdosova, L., Kasemann, S., Zehetner, J., and Kromka, A.: Optimization of diamond growth on structured, soft and brittle substrates. In: ASDAM 2020. Eds. T. Izsák et al. IEEE 2020. ISBN 978-1-7281-9776-0. P. 46-50.

Vanko, G., Dzuba, J., Držík, M., Kutiš, V., Kasemann, S., and Zehetner, J.: High temperature operation of the MEMS piezoelectric pressure sensor based on AlGaN/GaN heterostructure. In Proc. 8th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2020. ISBN 978-80-554-1735-6. P. 33-36.

Dubecký, F., Hubík, P., Vanko, G., Zaťko, B., Boháček, P., Sekáčová, M., Šagátová, A., and Nečas, V.: Investigation of Mg contact on SI-GaAs. In: ASDAM 2020. Eds. T. Izsák et al. IEEE 2020. ISBN 978-1-7281-9776-0. P. 147-151.

  • 2019

Sojková, M., Šiffalovič, P., Babchenko, O., Vanko, G., Dobročka, E., Hagara, J., Mrkývková, N., Majková, E.,  Ižák, T., Kromka, A., and Hulman, M.: Carbide-free one-zone sulfurization method grows thin MoS2 layers on polycrystalline CVD diamond, Sci Rep. 9 (2019) 2001.

Sojková, M., Šiffalovič, P., Babchenko, O., Vanko, G., Dobročka, E., Hagara, J., Mrkývková, N., Majková, E., Ižák, T., Kromka, A., and Hulman, M.: Carbide-free one-zone sulfurization method grown thin MOS2 layers on polycrystalline CVD diamond. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 281-284.

Zehetner, J., Vanko, G., and Kasemann, S.: Femtosecond laser ablation supported fabrication of surface structures for sensor and fluidic devices. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 259-262.

  • 2018

Babchenko, O., Vanko, G., Gerboc, M., Ižák, T., Vojs, M., Lalinský, T., and Kromka, A.: Study on electronic properties of diamond/SiNx-coated AlGaN/GaN high electron mobility transistors operating up to 500 °C, Diamond Related Mater. 89 (2018) 266-272.

Osvald, J., Lalinský, T., and Vanko, G.: High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes, Applied Surface Sci 461 (2018) 206-211.

Zehetner, J., Kasemann, S., Vanko, G., and Babchenko, O.: Black titanium dioxide in situ generated on femtosecond laser induced periodic surface structures. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 203-206.

  • 2017

Dubecký, F., Vanko, G., Zaťko, B., Kováč, J., Gombia, E., Ferrari, C., Šagátová, A., Nečas, V., : 4H-SiC radiation hard photodetector for UV photons and soft X-rays In: Proc. 23th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2017). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2017. ISBN 978-80-227-4699-1. P. 23-27.

Lalinský, T., Vanko, G., Dobročka, E., Osvald, J., Babchenko, O., Dzuba, J., Veselý, M., Vančo, Ľ., Vogrinčič, P., and Vincze, A.: Ir/Al multilayer gates for high temperature operated AlGaN/GaN HEMTs, Phys. Status Solidi A 214 (2017) 1700691.

Dubecký, F., Kindl, D., Hubík, P., Mičušík, M., Dubecký, M., Boháček, P., Vanko, G., Gombia, E., Nečas, V., Mudroň, J., : A comparative study of Mg and Pt contacts on semi-insulating GaAs: electrical and XPS characterization. Applied Surface Sci 395 (2017) 131-135.

Osvald, J., Lalinský, T., Vanko, G., : Analysis of current transport in gate oxide based (MOS) Schottky diodes on GaN/AlGaN/GaN In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 52-55.

Zehetner, J., Kasemann, S., Vanko, G., Dzuba, J., Lalinský, T., Nürnberger, S., : Micro structuring of diaphragms for III-N MEMS using short pulsed laser ablation In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 287-290.

Babchenko, O., Dzuba, J., Lalinský, T., Vojs, M., Vincze, A., Ižák, T., Vanko, G., : Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment,. Applied Surface Sci 395 (2017) 92-97.

Kutiš, V., Paulech, J., Gálik, G., Lalinský, T., Vanko, G., Hrabovský, J., Jakubec, J., : Thermal analysis of microbolometer In: Proc. 23th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2017). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2017. ISBN 978-80-227-4699-1. P. 267-271.

Lalinský, T., Dzuba, J., Vanko, G., Kutiš, V., Paulech, J., Gálik, G., Držík, M., Chromik, Š., Lobotka, P., :Thermo-mechanical analysis of uncooled La0.67Sr0.33MnO3 microbolometer made on circular SOI membrane. Sensors Actuators A 265 (2017) 321–328.

Osvald, J., Vanko, G., Chow, L., Chen, N., Chang, L., : Transition voltage of AlGaN/GaN heterostructure MSM varactor with two-dimensional electron gas. Microelectron. Reliab. 78 (2017) 243–248.

  • 2016

Lalinský, T., Vanko, G., Dzuba, J., Kutiš, V., Gálik, G., Paulech, J., Držík, M., Chromik, Š., and Lobotka, P.: Thermo-mechanical analysis of uncooled La0.67Sr0,33MnO3 microbolometer made on circular SOI membrane, Procedia  Engn. 168 (2016) 733-736.

Dubecký, F., Vanko, G., Kindl, D., Hubík, P., Gombia, E., Boháček, P., Sekáčová, M., Zaťko, B., : Investigation of metal contacts on semi-insulating GaAs: physics, technology and applications In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 219-222.

Zehetner, J., Kraus, S., Lucki, M., Vanko, G., Dzuba, J., Lalinský, T., : Manufacturing of membranes by laser ablation in SiC, sapphire, glass and ceramic for GaN/ferroelectric thin film MEMS and pressure sensors. Microsyst. Technol. 22 (2016) 1883-1892.

Zehetner, J., Vanko, G., Dzuba, J., Lalinský, T., Lucki, M., Kraus, S., : Micro structuring of bulk SiC substrates by femtosecond laser ablation. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 302-305.

Zehetner, J., Vanko, G., Dzuba, J., Lalinský, T., : Nanostructuring of bulk Si and SiC substrates by femtosecond laser ablation for membrane fabrication and surgace functionalization In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 223-226.

Kováč, T., Horvát, F., Čekan, M., Hučko, B., Szarvas, M., Dzuba, J., Vanko, G., : Numerical solution of aluminum galium nitride membrane in finite element analysis In: APLIMAT 2016. Eds. D. Richtarikova et al. Bratislava: STU 2016. ISBN: 978-802274531-4. P. 700-710.

Babchenko, O., Vanko, G., Dzuba, J., Ižák, T., Vojs, M., Lalinský, T., Kromka, A., : Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition process In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 157-160.

Dzuba, J., Vanko, G., Babchenko, O., Lalinský, T., Horvát, F., Szarvas, M., Kováč, T., Hučko, B., : Strain induced response of AlGaN/GaN high electron mobility transistor located on cantilever and membrane In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 227-230.

Ižák, T., Jirásek, V., Vanko, G., Dzuba, J., Kromka, A., : Temperature-dependent stress in diamond-coatewd AlGaN/GaN heterostructures. Mater. & Design 106 (2016) 305-312.

  • 2015

Chromik, Š., Štrbik, V., Španková, M., Lalinský, T., Vanko, G., Lobotka, P., Beňačka, Š., : Advanced perovskite thin films and structures for applications. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 64-67.

Dzuba, J., Vanko, G., Držík, M., Rýger, I., Kutiš, V., Zehetner, J., Lalinský, T., : AlGaN/GaN diaphragm-based pressure sensor with direct high performance piezoelectric transduction mechanism. Applied Phys. Lett. 107 (2015) 122102.

Michniak, P., Marton, M., Behú, M., Redhammer, R., Vanko, G., : Analysis of carbon nanowals prepared by hot filament chemical vapour deposition In: NANOCON 2015. Tanger: 2015. ISBN: 978-808729463-5. P. 143-148.

Vanko, G., Ižák, T., Babchenko, O., Kromka, A., : Diamond coated AlGaN/GaN high electron mobility transistors – effect of deposition process on gate electrode In: NANOCON 2015. Tanger: 2015. ISBN: 978-808729463-5. P. 168-173.

Ižák, T., Vanko, G., Babchenko, O., Potocký, Š., Marton, M., Vojs, M., Choleva, P., Kromka, A., : Diamond-coated three-dimensional GaN micromembranes: Effect of nucleation and deposition techniques,. Phys. Status Solidi B 252 (2015) 2585–2590.. (APVV 0455-12). (SASPRO 0068/01/01).

Dzuba, J., Vanko, G., Vojs, M., Rýger, I., Ižák, T., Jirásek, V., Kutiš, V., Lalinský, T., : Finite element analysis of AlGaN/GaN micro-diaphragms with diamond Proc. SPIE 9517 (2015) 95171I.

Rýger, I., Vanko, G., Lalinský, T., Haščík, Š., Benčurová, A., Nemec, P., Andok, R., Tomáška, M., : GaN/SiC based surface acoustic wave structures for hydrogen sensors with enhanced sensitivity. Sensors Actuators A 227 (2015) 55-62.

Ižák, T., Babchenko, O., Jirásek, V., Vanko, G., Vojs, M., Kromka, A., : Influence of diamond CVD growth conditions and interlayer material on diamond/GaN interface. Mater. Sci Forum 821-823 (2015) 982-985.

Lalinský, T., Vanko, G., Dobročka, E., Vincze, A., Dzuba, J., Babchenko, O., : Ir/Al multilayer systems for high temperature stable gates of AlGaN/GaN HEMTs. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 91-92.

Zehetner, J., Vanko, G., Dzuba, J., Rýger, I., Lalinský, T., Benkler, M., Lucki, M., : Laser ablation for membrane processing of AlGaN/GaN- and micro structured ferroelectric thin film MEMS and SiC pressure sensors for extreme conditions Proc. SPIE 9517 (2015) 951721.

Vanko, G., Dzuba, J., Rýger, I., Vallo, M., Lalinský, T., : MEMS pressure sensor with an AlGaN/GaN based high electron mobility transistor In: NSTI: Advanced Materials – TechConnect Briefs 2015. Eds. B. Romanowicz, M. Laudon. Taylor and Francis: 2015. ISBN: 978-149874730-1. P. 290-293.

Babchenko, O., Vojs, M., Dzuba, J., Lalinský, T., Vanko, G., : Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 20-21..(APVV 0455-12). (SASPRO 0068/01/01).

Dzuba, J., Držík, M., Ižák, T., Vojs, M., Babchenko, O., Lalinský, T., Kutiš, V., Jirásek, V., Kromka, A.,Vanko, G., : Stress analysis in diamond-coated AlGaN/GaN diaphragms for MEMS pressure sensors. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 44.

Dzuba, J., Vanko, G., Držík, M., Rýger, I., Vallo, M., Kutiš, V., Haško, D., Choleva, P., Lalinský, T., : Stress investigation of the AlGaN/GaN micromachined circular diaphragms of a pressure sensor. J. Micromech. Microengn. 25 (2015) 015001.

Ižák, T., Jirásek, V., Vanko, G., Dzuba, J., Kromka, A., : Temperature-dependent stress in diamond-coated AlGaN/GaN heterostructures. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 68-69.

  • 2014

Vanko, G., Vojs, M., Ižák, T., Potocký, P., Choleva, P., Marton, M., Rýger, I., Dzuba, J., Lalinský, T., : AlGaN/GaN micromembranes with diamond coating for high electron mobility transistors operated at high temperatures In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 263-266.

Rýger, I., Vanko, G., Lalinský, T., Dzuba, J., Vallo, M., Kunzo, P., Vávra, I., : Enhanced sensitivity of Pt/NiO gate based AlGaN/GaN C-HEMT hydrogen sensor Key Engn. Mater. 605 (2014) 491-494.

Osvald, J., Vanko, G., Fröhlich, K., : Frequency dependent capacitance of insulator GaN/AlGaN/GaN heterostructure In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 221-224.

Dzuba, J., Vanko, G., Rýger, I., Vallo, M., Kutiš, V., Lalinský, T., : Influence of temperature on the sensitivity of the AlGaN/GaN C HEMT based piezoelectric pressure sensor In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 5-8.

Chromik, Š., Štrbik, V., Dobročka, E., Roch, T., Rosová, A., Španková, M., Lalinský, T., Vanko, G., Lobotka, P., Ralbovský, M., Choleva, P., : LSMO thin films with high metal-insulator transition temperature on buffered SOI substrates for uncooled microbolometers. Applied Surface Sci 312 (2014) 30-33.

Dubecký, F., Zaťko, B., Vanko, G., Hubík, P., Oswald, J., Kindl, D., Gombia, E., Kováč, J., Šagátová, A., Nečas, V., : M/SI-GaAs/M diode: role of the metal contact in electrical transport, ɑ-particle and photon detection In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 49-52.

Dzuba, J., Držík, M., Vanko, G., Rýger, I., Vallo, M., Kutiš, V., Lalinský, T., : Modal analysis of Gallium Nitride membrane for pressure sensing device Key Engn. Mater. 605 (2014) 404-407.

Vanko, G., Dzuba, J., Rýger, I., Lalinský, T., Vojs, M., Vincze, A., Dobročka, E., : Processing technology of MEMS sensors using III-N material system In: 17. škola vákuovej techniky: Analýza materiálov vo vákuu. Material analysis in vacuum. Eds. M. Michalka et al. Bratislava: FEI STU 2014. ISBN 978-80-971179-4-8. P. 39-43.

Rýger, I., Vanko, G., Lalinský, T., Kunzo, P., Vallo, M., Vávra, I., Plecenik, T., : Pt/NiO ring gate based Schottky diode hydrogen sensors with enhanced sensitivity and thermal stability. Sensors Actuators B 202 (2014) 1-8.

Ižák, T., Babchenko, O., Jirásek, V., Vanko, G., Vallo, M., Vojs, M., Kromka, A., : Selective area deposition of diamond films on AlGaN/GaN heterostructures. Phys. Status Solidi B 251 (2014) 2574-2580.

Dzuba, J., Vanko, G., Držík, M., Rýger, I., Vallo, M., Lalinský, T., Kutiš, V., Haško, D., Srnánek, R., : The AlGaN/GaN C-HEMT diaphragm-based MEMS pressure sensor for harsh environment In: 17. škola vákuovej techniky: Analýza materiálov vo vákuu. Material analysis in vacuum. Eds. M. Michalka et al. Bratislava: FEI STU 2014. ISBN 978-80-971179-4-8. P. 142-145.

Rýger, I., Vanko, G., Lalinský, T., Haščík, Š., Nemec, P., Benčurová, A., Tomáška, M., : The GaN/SiC heterostructure-based hydrogen SAW sensor operating in GHz range. Procedia Engn. 87 (2014) 260-263.

Zehetner, J., Vanko, G., Choleva, P., Dzuba, J., Rýger, I., Lalinský, T., : Using of laser ablation technique in the processing technology of GaN/SiC based MEMS for extreme conditions In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 259-262.

  • 2013

Dubecký, F., Kováč, J., Kováč, J., Zaťko, B., Osvald, J., Hubík, P., Kindl, D., Vanko, G., Gombia, E., Ferrari, C., Boháček, P., Šagátová, A., Nečas, V., Sekáčová, M., : 4H-SiC and novel SI GaAs-based M-S-M radiation hard photodetectors applicable in UV, EUV and soft X-ray detection: design, technology and performance testing, Proc. SPIE 8777B (2013) 8777-56.

Vanko, G., Lalinský, T., Ižák, T., Vojs, M., Vincze, A., Dobročka, E., Vallo, M., Dzuba, J., Rýger, I., Kromka, A., : AlGaN/GaN high electron mobility transistors for high temperatures In: Perspektívne vákuové metódy a technológie: 16. škola vákuovej techniky. Eds. M. Vojs, M. Veselý. Bratislava: Slov. vákuová spol. 2013. ISBN 978-80-971179-2-4. S. 55-59.

Vanko, G., Hudek, P., Dzuba, J., Choleva, P., Kutiš, V., Vallo, M., Rýger, I., Lalinský, T., : Bulk micromachining of SiC substrate for MEMS sensor applications. Microelectron. Engn. 110 (2013) 260-264.

Le Boulbar, E., Edwards, M., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C., Allsopp, D., : Effect of bias conditions on pressure sensors based on AlGaN/GaN high electron mobility transistor. Sensors Actuators A 194 (2013) 247-251.

Vallo, M., Lalinský, T., Dobročka, E., Vanko, G., Vincze, A., Rýger, I., : Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT,. Applied Surface Sci 267 (2013) 159-163.

Lalinský, T., Vallo, M., Vanko, G., Dobročka, E., Vincze, A., Osvald, J., Rýger, I., Dzuba, J., : Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation. Applied Surface Sci 283 (2013) 160-167.

Vanko, G., Hudek, P., Zehetner, J., Dzuba, J., Choleva, P., Vallo, M., Rýger, I., Lalinský, T., : MEMS pressure sensor fabricated by advanced bulk micromachining techniques, Proc. SPIE 8763 (2013) 8763-101.

Jirásek, V., Ižák, T., Babchenko, O., Kromka, A., Vanko, G., : Modeling of thermal stress induced during the diamond-coating of AlGaN/GaN high electron mobility transistors Advanced Sci, Engn. Medicine 5 (2013) 522-526.

Florovič, M., Kováč, J., Hronec, P., Škriniarová, J., Donoval, D., Lalinský, T., Vanko, G., : On-state stress investigation of AlGaN/GaN HEMT. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 44-47.

Ižák, T., Jirásek, V., Vanko, G., Babchenko, O., Varga, M., Kromka, A., : Perspectives and challenges in „Diamant-on-GaN“ In: Perspektívne vákuové metódy a technológie: 16. škola vákuovej techniky. Eds. M. Vojs, M. Veselý. Bratislava: Slov. vákuová spol. 2013. ISBN 978-80-971179-2-4. S. 37-41.

Vincze, A., Vallo, M., Dobročka, E., Rýger, I., Vanko, G., Lalinský, T., : SIMS and XRD analysis on Ir contact layers for AlGaN/GaN HEMT structures. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 295-298.

  • 2012

Rýger, I., Vanko, G., Kunzo, P., Lalinský, T., Vallo, M., Plecenik, A., Satrapinskyy, L., Plecenik, T., :AlGaN/GaN HEMT based hydrogen sensors with gate absorption layers formed by high temperature oxidation. Procedia Engn. 47 (2012) 518-521.

Lalinský, T., Vanko, G., Vallo, M., Dobročka, E., Rýger, I., Vincze, A., : AlGaN/GaN high electron mobility transistors with nickel oxide based gates formed by high temperature oxidation. Applied Phys. Lett. 100 (2012) 092105.

Rýger, I., Tomáška, M., Vanko, G., Lalinský, T., : An AlGaN/GaN based GHz-range surface acoustic wave oscillator for sensor applications. . In: Proc. 22nd Inter. Conf. Radioelektronika 2012. Eds. R. Balada et al. Brno: Univ. Technol. 2012. ISBN 978-80-214-4468-3. P. 279-282.

Vanko, G., Vallo, M., Rýger, I., Dzuba, J., Lalinský, T., : Conductive metal oxide based gates for self aligned technology of AlGaN/GaN HEMT. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 19-22.

Rýger, I., Vanko, G., Kunzo, P., Lalinský, T., Dzuba, J., Vallo, M., Satrapinskyy, L., Plecenik, T., Chvála, A., : Gates of AlGaN/GaN HEMT for high temperature gas sensing applications. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 23-26.

Dubecký, F., Gombia, E., Ferrari, C., Zaťko, B., Vanko, G., Baldini, M., Kováč, J., Baček, D., Kováč, P., Hrkút, P., Nečas, V., : Characterization of epitaxial 4H-SiC for photon detectors. J. Instrument. 7 (2012) P09005.

Mikolášek, M., Zhang, D., Vanko, G., Kováč, J., Zeman, M., Harmatha, L., : Impact of interface passivation on the band alignment of a-Si:H(n)/c-Si(p) heterostructure solar cells. In: Proc. 27th Europ. Photovoltaic Solar Energy Conf. and Exhibition. Frankfurt 2012. P. 1534-1537.

Vanko, G., Vallo, M., Bruncko, J., Lalinský, T., : Laser ablated ZnO layers for ALGaN/GaN HEMT passivation. Vacuum 86 (2012) 672-674.

Vanko, G., Zehetner, J., Choleva, P., Lalinský, T., Hudek, P., : Laser ablation: A supporting technique to bulk micromachining of SiC. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 259-262.

Lalinský, T., Hudek, P., Vanko, G., Dzuba, J., Kutiš, V., Srnánek, R., Choleva, P., Vallo, M., Držík, M., Matay, L., Kostič, I., : Micromachined membrane structures for pressure sensors based on AlGaN/GaN circular HEMT sensing device. Microelectron. Engn. 98 (2012) 578–581.

Dzuba, J., Lalinský, T., Vanko, G., Vallo, M., Rýger, I., Kutiš, V., Královič, V., : Modeling and simulation of AlGaN/GaN piezoelectric MEMS pressure sensor. In: 13th Mechatronics Forum Inter. Conf. – Mechatronics 2012. Linz 2012. P. 773-778.

Dubecký, F., Príbytný, P., Vanko, G., Zaťko, B., Gombia, E., Baldini, M., Hrkút, P., Nečas, V., Donoval, D., : Novel concepts of soft X-ray detector based on semi-insulating GaAs. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 29-32.

Edwards, M., Le Boulbar, E., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C., Allsopp, D., : Pressure and temperature dependence of GaN/AlGaN HEMT based sensors on a sapphire membrane,. Phys. Status Solidi c 9 (2012) 960-963.

Vincze, A., Držík, M., Michalka, M., Bruncko, J., Vallo, M., Vanko, G., Lalinský, T., : SIMS depth profiling of metallization contact layers for AlGaN/GaN heterostructures. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 231-234.

Dubecký, F., Gombia, E., Vanko, G., Ferrari, C., Zaťko, B., Kováč, P., Baček, D., Baldini, M., Ryć, L., Nečas, V., : Surface barrier 4H-SiC soft X-ray detector for hot plasmas diagnostic. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 247-250.

  • 2011

Rýger, I., Vanko, G., Lalinský, T., Vallo, M., Tomáška, M., Ritomský, A., : AlGaN/GaN based SAW-HEMT devices for chemical gas sensors operating in GHz range. Procedia Engn. 25 (2011) 1101-1104.

Vanko, G., Držík, M., Vallo, M., Lalinský, T., Kutiš, V., Stančík, S., Rýger, I., Benčurová, A., : AlGaN/GaN C-HEMT structures for dynamic stress detection. Sensors Actuators A 172 (2011) 98-102.

Mikolášek, M., Prusaková, L., Matay, L., Řeháček, V., Jakabovič, J., Vanko, G., Kotlár, M., Harmatha, L., : Determination of the conduction band offset in the a-Si:H/c-Si heterojunction structures from coplanar temperature current-voltage measurements. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 184-187.

Lalinský, T., Vanko, G., Vincze, A., Haščík, Š., Osvald, J., Donoval, D., Tomáška, M., Kostič, I., : Effect of fluorine interface redistribution on performance of AlGaN/GaN HEMTs. Microelectr. Engn. 88 (2011) 166-169.

Dubecký, F., Gombia, E., Vanko, G., Ferrari, C., Baldini, M., Ryć, L., Zaťko, B., Nečas, V., : Characterization of epitaxial 4H-SiC as a material for spectrometric radiation detectors. In: APCOM 2011. Eds. D. Pudiš et al. Žilina: FEE TU, 2011. ISBN: 978-80-554-0386-1. P. 240-243.

Lalinský, T., Vanko, G., Vallo, M., Držík, M., Bruncko, J., Jakovenko, J., Kutiš, V., Rýger, I., Haščík, Š., Husák, M., : Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor. Sensors Actuators A 172 (2011) 386-391.

Lalinský, T., Hudek, P., Vanko, G., Choleva, P., Vallo, M., Matay, L., Kostič, I., Držík, M., : Micromachined pressure sensors based on AlGaN/GaN circular HEMT sensing devices In: 37th Inter. Conf. Micro Nano Engn. – MNE 2011. Berlin 2011.

Lalinský, T., Držík, M., Vanko, G., Vallo, M., Kutiš, V., Bruncko, J., Haščík, Š., Jakovenko, J., Husák, M., :Piezoelectric response of AlGaN/GaN-based circular-HEMT structures. Microelectr. Engn. 88 (2011) 2424-2426.

  • 2010

Lalinský, T., Rýger, I., Vanko, G., Tomáška, M., Kostič, I., Haščík, Š., Vallo, M., : AlGaN/GaN based SAW-HEMT structures for chemical gas sensors, Procedia Engn. 5 (2010) 152-155.

Vallo, M., Lalinský, T., Vanko, G., Držík, M., Haščík, Š., Rýger, I., Kostič, I., : AlGaN/GaN C-HEMT for piezoelectric MEMS stress sensor appliocations. In.: MME 2010. Eds. L. Abelmann et al. Enschede: Univ. Twente 2010. ISBN 978-90-816737-1-6. P. 56-59.

Vanko, G., Držík, M., Vallo, M., Lalinský, T., Kutiš, V., Stančík, S., Rýger, I., Kostič, I., : AlGaN/GaN C-HEMT structures for dynamic stress detection. Procedia Engn. 5 (2010) 1405-1408.

Osvald, J., Lalinský, T., Vanko, G., Haščík, Š., Vincze, A., : C–V analysis of rapidly thermal annealed SF6 plasma treated AlGaN/GaN heterostructures. Applied Surface Sci 257 (2010) 1254-1256.

Osvald, J., Lalinský, T., Vanko, G., Haščík, Š., Vincze, A., : C–V characterization of SF6 plasma treated AlGaN/GaN heterostructures. Microelectr. Engn. 87 (2010) 2208-2210. (VEGA-2-0163-09).

Rýger, I., Lalinský, T., Vanko, G., Tomáška, M., Kostič, I., Haščík, Š., Vallo, M., : HEMT-SAW structures for chemical gas sensors in harsh environment In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 131-134.

Liday, J., Vogrinčič, P., Hotový, I., Bonanni, A., Sitter, H., Lalinský, T., Vanko, G., Řeháček, V., Breza, J., Ecke, G., : Ohmic contacts to p-GaN using Au/Ni-Mg-O metallization. J. Electr. Engn. 61 (2010) 378-381.

  • 2009

Jakovenko, J., Lalinský, T., Držík, M., Ivanova, M., Vanko, G., Husák, M., : GaN, GaAs and silicon based micromechanical free standing hot plates for gas sensing. Procedia Chemistry 1 (2009) 804-807.

Vanko, G., Lalinský, T., Haščík, Š., Rýger, I., Mozolová, Ž., Škriniarová, J., Tomáška, M., Kostič, I., Vincze, A., : Impact of SF6 plasma treatment on performance of AlGaN/GaN HEMT. Vacuum 84 (2009) 235-237.

Lalinský, T., Rýger, I., Rufer, L., Vanko, G., Haščík, Š., Mozolová, Ž., Škriniarová, J., Tomáška, M., Kostič, I., Vincze, A., : Surface acoustic wave excitation on SF6 plasma-treated AlGaN/GaN heterostructure. Vacuum 84 (2009) 231-234.

  • 2008

Lalinský, T., Vanko, G., : Advanced microelectronic and micro-electro-mechanical structures based on AlGaN/GaN material systems. In: Vzájomná spolupráca pracovísk = kvalitný výskum, Zamerané na vákuové technológie. Škola vákuovej techniky. Bratislava: Slov. vákuová spoločnosť, 2008. ISBN 978-80-969435-4-8. P. 64-69.

Lalinský, T., Rufer, L., Vanko, G., Mir, S., Haščík, Š., Mozolová, Ž., Vincze, A., Uherek, F., : AlGaN/GaN heterostructure-based surface acoustic wave-structures for chemical sensors. Applied Surface Sci 255 (2008) 712-714.

Lalinský, T., Držík, M., Jakovenko, J., Vanko, G., Mozolová, Ž., Haščík, Š., Chlpík, J., Hotový, I., Řeháček, V., Kostič, I., Matay, L., Husák, M., : GaAs based micromachined thermal converter for gas sensors. Sensors Actuators A 142 (2008) 147-152.

Hotový, I., Řeháček, V., Mika, F., Lalinský, T., Haščík, Š., Vanko, G., Držík, M., : Gallium arsenide suspended microheater for MEMS sensor arrays Microsyst. Technol. 14 (2008) 629-635.

Tomáška, M., Lalinský, T., Vanko, G., Mišun, M., : High frequency characterization and properties of AlGaN/GaN HEMT structures. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 331-334.

Vanko, G., Lalinský, T., Tomáška, M., Haščík, Š., Mozolová, Ž., Škriniarová, J., Kostič, I., Vincze, A., Uherek, F., : Impact of SF6 plasma on DC and microwave performance of AlGaN/GaN HEMT structures. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 335-338.

Tomáška, M., Lalinský, T., Vanko, G., Mišun, M., : Microwave characterization and properties of 2 µm gate length AlGaN/Gan HEMT structures. In: COMITE 2008 Praha: Čs. sekce IEEE, 2008. 350 p. ISBN 978-1-4244-2137-4. P. 317-320.

Vanko, G., Lalinský, T., Mozolová, Ž., Liday, J., Vogrinčič, P., Vincze, A., Uherek, F., Haščík, Š., Kostič, I., :Nb-Ti/Al/Ni/Au based ohmic contacts to AlGaN/GaN. Vacuum 82 (2008) 193-196.

Haščík, Š., Hotový, I., Lalinský, T., Vanko, G., Řeháček, V., Mozolová, Ž., : Preparation of thin GaAs suspended membranes for gas microsensors using plasma etching. Vacuum 82 (2008) 236-239.

Lalinský, T., Rufer, L., Vanko, G., Rýger, I., Haščík, Š., Tomáška, M., Mozolová, Ž., Vincze, A., : Surface acoustic wave excitation on SF6 plasma treated AlGaN/GaN heterostructure. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 311-314.

  • 2007

Jakovenko, J., Husák, M., Lalinský, T., Držík, M., Vanko, G., : Design and modeling of GaAs based hot plate for Gas sensors. In: DTIP 2007. Ed. K.Chakrabarty et al. EDA Publishing, 2007. ISBN 978-2-35500-000-3. P. 147-150.

  • 2006

Rufer, L., Lalinský, T., Grobelny, D., Mir, S., Vanko, G., Öszi, Z., Mozolová, Ž., : GaAs and GaN based SAW chemical sensors: acoustic part design and technology. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 165-168.

Lalinský, T., Vanko, G., Grujbár, M., Mozolová, Ž., Haščík, Š., Kostič, I., : Nb-Ti/Al/Ni/Au ohmic metallic system to AlGaN/GaN. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 151-154.

  • 2005

Lalinský, T., Vanko, G., Gregušová, D., Mozolová, Ž., Haščík, Š., Kordoš, P., : Schottky gate contacts for AlGaN/GaN based HEMTs. In: Proc. IMAPS CS Inter. Conf. EDS’05. Brno: VUT 2005. P. 242-247. ISBN 80-214-2990-9.