Ing. Ivan RÝGER

  • 2021

Rýger, I., Lobotka, P., Steiger, A., Chromik, Š., Lalinský, T., Raida, Z., Pítra, K., Zehetner, J., Španková, M., Gaži, Š., Sojková, M., and Vanko, G.: Uncooled antenna-coupled microbolometer for detection of terahertz radiation, J. Infrared, Millimet., Terahertz Waves 42 (2021) 462–478.

  • 2015

Dzuba, J., Vanko, G., Držík, M., Rýger, I., Kutiš, V., Zehetner, J., Lalinský, T.: AlGaN/GaN diaphragm-based pressure sensor with direct high performance piezoelectric transduction mechanism. Applied Phys. Lett. 107 (2015) 122102.

Dzuba, J., Vanko, G., Vojs, M., Rýger, I., Ižák, T., Jirásek, V., Kutiš, V., Lalinský, T., : Finite element analysis of AlGaN/GaN micro-diaphragms with diamond Proc. SPIE 9517 (2015) 95171I.

Rýger, I., Vanko, G., Lalinský, T., Haščík, Š., Benčurová, A., Nemec, P., Andok, R., Tomáška, M., : GaN/SiC based surface acoustic wave structures for hydrogen sensors with enhanced sensitivity. Sensors Actuators A 227 (2015) 55-62.

Zehetner, J., Vanko, G., Dzuba, J., Rýger, I., Lalinský, T., Benkler, M., Lucki, M., : Laser ablation for membrane processing of AlGaN/GaN- and micro structured ferroelectric thin film MEMS and SiC pressure sensors for extreme conditions Proc. SPIE 9517 (2015) 951721.

Vanko, G., Dzuba, J., Rýger, I., Vallo, M., Lalinský, T., : MEMS pressure sensor with an AlGaN/GaN based high electron mobility transistor In: NSTI: Advanced Materials – TechConnect Briefs 2015. Eds. B. Romanowicz, M. Laudon. Taylor and Francis: 2015. ISBN: 978-149874730-1. P. 290-293.

Dzuba, J., Vanko, G., Držík, M., Rýger, I., Vallo, M., Kutiš, V., Haško, D., Choleva, P., Lalinský, T., : Stress investigation of the AlGaN/GaN micromachined circular diaphragms of a pressure sensor. J. Micromech. Microengn. 25 (2015) 015001.

  • 2014

Vanko, G., Vojs, M., Ižák, T., Potocký, P., Choleva, P., Marton, M., Rýger, I., Dzuba, J., Lalinský, T., : AlGaN/GaN micromembranes with diamond coating for high electron mobility transistors operated at high temperatures In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 263-266.

Rýger, I., Vanko, G., Lalinský, T., Dzuba, J., Vallo, M., Kunzo, P., Vávra, I., : Enhanced sensitivity of Pt/NiO gate based AlGaN/GaN C-HEMT hydrogen sensor Key Engn. Mater. 605 (2014) 491-494.

Dzuba, J., Vanko, G., Rýger, I., Vallo, M., Kutiš, V., Lalinský, T., : Influence of temperature on the sensitivity of the AlGaN/GaN C HEMT based piezoelectric pressure sensor In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 5-8.

Dzuba, J., Držík, M., Vanko, G., Rýger, I., Vallo, M., Kutiš, V., Lalinský, T., : Modal analysis of Gallium Nitride membrane for pressure sensing device Key Engn. Mater. 605 (2014) 404-407.

Vanko, G., Dzuba, J., Rýger, I., Lalinský, T., Vojs, M., Vincze, A., Dobročka, E., : Processing technology of MEMS sensors using III-N material system In: 17. škola vákuovej techniky: Analýza materiálov vo vákuu. Material analysis in vacuum. Eds. M. Michalka et al. Bratislava: FEI STU 2014. ISBN 978-80-971179-4-8. P. 39-43.

Rýger, I., Vanko, G., Lalinský, T., Kunzo, P., Vallo, M., Vávra, I., Plecenik, T., : Pt/NiO ring gate based Schottky diode hydrogen sensors with enhanced sensitivity and thermal stability. Sensors Actuators B 202 (2014) 1-8.

Dzuba, J., Vanko, G., Držík, M., Rýger, I., Vallo, M., Lalinský, T., Kutiš, V., Haško, D., Srnánek, R., : The AlGaN/GaN C-HEMT diaphragm-based MEMS pressure sensor for harsh environment In: 17. škola vákuovej techniky: Analýza materiálov vo vákuu. Material analysis in vacuum. Eds. M. Michalka et al. Bratislava: FEI STU 2014. ISBN 978-80-971179-4-8. P. 142-145.

Rýger, I., Vanko, G., Lalinský, T., Haščík, Š., Nemec, P., Benčurová, A., Tomáška, M., : The GaN/SiC heterostructure-based hydrogen SAW sensor operating in GHz range. Procedia Engn. 87 (2014) 260-263

Zehetner, J., Vanko, G., Choleva, P., Dzuba, J., Rýger, I., Lalinský, T., : Using of laser ablation technique in the processing technology of GaN/SiC based MEMS for extreme conditions In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 259-262.

  • 2013

Vanko, G., Lalinský, T., Ižák, T., Vojs, M., Vincze, A., Dobročka, E., Vallo, M., Dzuba, J., Rýger, I., Kromka, A., : AlGaN/GaN high electron mobility transistors for high temperatures In: Perspektívne vákuové metódy a technológie: 16. škola vákuovej techniky. Eds. M. Vojs, M. Veselý. Bratislava: Slov. vákuová spol. 2013. ISBN 978-80-971179-2-4. S. 55-59.

Vanko, G., Hudek, P., Dzuba, J., Choleva, P., Kutiš, V., Vallo, M., Rýger, I., Lalinský, T., : Bulk micromachining of SiC substrate for MEMS sensor applications. Microelectron. Engn. 110 (2013) 260-264

Vallo, M., Lalinský, T., Dobročka, E., Vanko, G., Vincze, A., Rýger, I., : Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT,. Applied Surface Sci 267 (2013) 159-163.

Lalinský, T., Vallo, M., Vanko, G., Dobročka, E., Vincze, A., Osvald, J., Rýger, I., Dzuba, J., : Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation. Applied Surface Sci 283 (2013) 160-167.

Vanko, G., Hudek, P., Zehetner, J., Dzuba, J., Choleva, P., Vallo, M., Rýger, I., Lalinský, T., : MEMS pressure sensor fabricated by advanced bulk micromachining techniques, Proc. SPIE 8763 (2013) 8763-101.

Kutiš, V., Gálik, G., Rýger, I., Paulech, J., Murín, J., Hrabovský, J., Lalinský, T., : Modal and transient analysis of SAW MEMS sensor. In: Proc. 19th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2013). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2013. ISBN 978-80-227-3956-6. P. 221-224.

Vincze, A., Vallo, M., Dobročka, E., Rýger, I., Vanko, G., Lalinský, T., : SIMS and XRD analysis on Ir contact layers for AlGaN/GaN HEMT structures. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 295-298.

  • 2012

Rýger, I., Vanko, G., Kunzo, P., Lalinský, T., Vallo, M., Plecenik, A., Satrapinskyy, L., Plecenik, T., :AlGaN/GaN HEMT based hydrogen sensors with gate absorption layers formed by high temperature oxidation. Procedia Engn. 47 (2012) 518-521.

Lalinský, T., Vanko, G., Vallo, M., Dobročka, E., Rýger, I., Vincze, A., : AlGaN/GaN high electron mobility transistors with nickel oxide based gates formed by high temperature oxidation. Applied Phys. Lett. 100 (2012) 092105.

Rýger, I., Tomáška, M., Vanko, G., Lalinský, T., : An AlGaN/GaN based GHz-range surface acoustic wave oscillator for sensor applications. . In: Proc. 22nd Inter. Conf. Radioelektronika 2012. Eds. R. Balada et al. Brno: Univ. Technol. 2012. ISBN 978-80-214-4468-3. P. 279-282.

Vanko, G., Vallo, M., Rýger, I., Dzuba, J., Lalinský, T., : Conductive metal oxide based gates for self aligned technology of AlGaN/GaN HEMT. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 19-22.

Rýger, I., Vanko, G., Kunzo, P., Lalinský, T., Dzuba, J., Vallo, M., Satrapinskyy, L., Plecenik, T., Chvála, A., : Gates of AlGaN/GaN HEMT for high temperature gas sensing applications. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 23-26.

Dzuba, J., Lalinský, T., Vanko, G., Vallo, M., Rýger, I., Kutiš, V., Královič, V., : Modeling and simulation of AlGaN/GaN piezoelectric MEMS pressure sensor. In: 13th Mechatronics Forum Inter. Conf. – Mechatronics 2012. Linz 2012. P. 773-778.

Kutiš, V., Gálik, G., Královič, V., Rýger, I., Mojto, E., Lalinský, T., : Modelling and simulation of SAW sensor using FEM. Procedia Engn. 48 (2012) 332-337.

  • 2011

Rýger, I., Vanko, G., Lalinský, T., Vallo, M., Tomáška, M., Ritomský, A., : AlGaN/GaN based SAW-HEMT devices for chemical gas sensors operating in GHz range. Procedia Engn. 25 (2011) 1101-1104.

Vanko, G., Držík, M., Vallo, M., Lalinský, T., Kutiš, V., Stančík, S., Rýger, I., Benčurová, A., : AlGaN/GaN C-HEMT structures for dynamic stress detection. Sensors Actuators A 172 (2011) 98-102.

Lalinský, T., Vanko, G., Vallo, M., Držík, M., Bruncko, J., Jakovenko, J., Kutiš, V., Rýger, I., Haščík, Š., Husák, M., : Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor. Sensors Actuators A 172 (2011) 386-391.

  • 2010

Lalinský, T., Rýger, I., Vanko, G., Tomáška, M., Kostič, I., Haščík, Š., Vallo, M., : AlGaN/GaN based SAW-HEMT structures for chemical gas sensors, Procedia Engn. 5 (2010) 152-155.

Vallo, M., Lalinský, T., Vanko, G., Držík, M., Haščík, Š., Rýger, I., Kostič, I., : AlGaN/GaN C-HEMT for piezoelectric MEMS stress sensor appliocations. In.: MME 2010. Eds. L. Abelmann et al. Enschede: Univ. Twente 2010. ISBN 978-90-816737-1-6. P. 56-59.

Vanko, G., Držík, M., Vallo, M., Lalinský, T., Kutiš, V., Stančík, S., Rýger, I., Kostič, I., : AlGaN/GaN C-HEMT structures for dynamic stress detection. Procedia Engn. 5 (2010) 1405-1408.

Rýger, I., Lalinský, T., Vanko, G., Tomáška, M., Kostič, I., Haščík, Š., Vallo, M., : HEMT-SAW structures for chemical gas sensors in harsh environment In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 131-134.

  • 2009

Vanko, G., Lalinský, T., Haščík, Š., Rýger, I., Mozolová, Ž., Škriniarová, J., Tomáška, M., Kostič, I., Vincze, A., : Impact of SF6 plasma treatment on performance of AlGaN/GaN HEMT. Vacuum 84 (2009) 235-237

Lalinský, T., Rýger, I., Rufer, L., Vanko, G., Haščík, Š., Mozolová, Ž., Škriniarová, J., Tomáška, M., Kostič, I., Vincze, A., : Surface acoustic wave excitation on SF6 plasma-treated AlGaN/GaN heterostructure. Vacuum 84 (2009) 231-234.

  • 2008

Lalinský, T., Rufer, L., Vanko, G., Rýger, I., Haščík, Š., Tomáška, M., Mozolová, Ž., Vincze, A., : Surface acoustic wave excitation on SF6 plasma treated AlGaN/GaN heterostructure. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 311-314.