Elektrotechnický ústav SAV, v.v.i.

2023

Kuzmík, J., Pohorelec, O., Hasenöhrl, S., Blaho, M., Stoklas, R., Dobročka, E., Rosová, A., Kučera, M., Gucmann, F., Gregušová, D., Precner, M., and Vincze, A.: Mg doping of N-polar, in-rich InAlN, Materials, 16 (2023) 2250.

Šichman, P., Stoklas, R., Hasenöhrl, S., Gregušová, D., Ťapajna, M., Hudec, B., Haščík, Š., Hashizume, T., Chvála, A., Šatka, A., and Kuzmík, J.: Vertical GaN transistor with semi-insulating channel, Physica Status Solidi (a) 220 (2023) SI2200776.

Hasenöhrl, S., Blaho, M., Dobročka, E., Gucmann, F., Kučera, M., Nádaždy, P., Stoklas, R., Rosová, A., and Kuzmík, J.: Growth of N-polar In-rich InAlN by metal organic chemical vapor deposition on on- and off-axis sapphire, Mater. Sci Semicond. Process. 156 (2023) 107290.

Stoklas, R., Hasenőhrl, S., Dobročka, E., Gucmann, , and Kuzmík, J.: Electron transport properties in thin InN layers grown on InAlN, Mater. Sci Semicond. Process. 155 (2023) 107250.

2022

Rosová, A., Dobročka, E., Eliáš, P., Hasenöhrl, S., Kučera, M., Gucmann, F., and Kuzmík, J.: In(Ga)N 3D growth on GaN-buffered on-axis and off-axis (0001) sapphire substrates by MOCVD, Nanomater. 12 (2022) 3496.

Stoklas, R., Šichman, P., Hasenöhrl, S., Gregušová, D., Ťapajna, M., Hudec, B., Haščík, Š., and Kuzmík, J.: Interface states analysis of Al₂O₃/GaN MOS capacitors with semi-insulating C-doped GaN. In: ASDAM 2022. Eds. J. Marek et al. IEEE 2022. ISBN 978-1-6654-6977-7. P. 15-16.

2021

Kuzmík, J., Adikimenakis, A., Ťapajna, M., Gregušová, D., Haščík, Š., Dobročka, E., Tsagaraki, K., Stoklas, R., and Georgakilas, A.: InN: breaking the limits of solid-state electronics, AIP Adv. 11 (2021) 125325.

Gucmann, F., Kučera, M., Hasenőhrl, S., Eliáš, P., Rosová, A., Dobročka, E., Stoklas, R., and Kuzmík, J.: InN crystal habit, structural, electrical, and optical properties affected by sapphire substrate nitridation in N-polar InN/InAlN heterostructures, Semicond. Sci Technol. 36 (2021) 075025.

Stoklas, R., Chvála,, Šichman, P., Hasenöhrl, S., Haščík, Š., Priesol, J., Šatka, A., and Kuzmík, J.: Analysis and modeling of vertical current conduction and breakdown mechanisms in semi-insulating GaN grown on GaN: role of deep levels, IEEE Trans. Electron Dev. 68 (2021) 2365.

Gregušová, D., Pohorelec, O., Ťapajna, M., Blaho, M., Gucmann, F., Stoklas, R., Hasenöhrl, S., Laurenčíková, A., Šichman, P., Haščík, Š., and Kuzmík, J.: Polarization engineering in GaN-based normally-off transistors. In: 2021 Inter. Meeting for Future of Electron Devices – IMFEDK2021. Kansai, Virtual 2021. Invited. IEEE: 2021, p. 1-4. ISBN 978-1-6654-4200-8.

Šichman, P., Haščík, Š., Gregušová, D., Hasenöhrl, S., and Kuzmík, J.: Optimalization of SiCl₄ – based reactive ion etching and nickel hard mask for GaN on GaN vertical structures. In Proc. 9^th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 163-166.

Pohorelec, O., Gregušová, D., Hasenöhrl, S., Dobročka, E., Stoklas, R., Vančo, L., Gregor, M., and Kuzmík, J.: Mg doping of InAlN layers. In Proc. 9^th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Žilina: EDIS 2021. ISBN 978-80-554-1735-6. P. 147-150.

2020

Hasenöhrl, S., Dobročka, E., Stoklas, R., Gucmann, F., Rosová, A., and Kuzmík, J.: Growth and Properties of N-polar InN/InAlN Heterostructures, Phys. Stat. sol (a) 217 (2020) 2000197.

Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., and Kuzmík, J.: Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs, Applied Surface Sci 528 (2020) 146824.

Šichman, P., Hasenöhrl, S., Stoklas, R., Priesol, J., Dobročka, E., Haščík, Š., Gucmann, F., Vincze, A., Chvála, A., Marek, J., Šatka, A., and Kuzmík, J.: Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure, Mater. Sci Semicond. Process. 118 (2020) 105203.

Adikimenakis, A., Chatzopoulou, P., Dimitrakopulos, G. P., Kehagias, Th., Tsagaraki, K., Androulidaki, M., Doundoulakis, G., Kuzmík, J., and Georgakilas, A.: Correlation of threading dislocations with the electron concentration and mobility in InN heteroepitaxial layers grown by MBE, ECS J. Solid State Sci Technol. 9 (2020) 015006.

Chauhan, P., Hasenöhrl, S., Vančo, Ľ., Šiffalovič, P., Dobročka, E., Machajdík, D., Rosová, A., Gucmann, F., Kováč, J.jr., Maťko, I., Kuball, M., and Kuzmík, J.: A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: A complete depth-resolved investigation, CrystEngComm 22 (2020) 130-141.

Chauhan, P., Hasenöhrl, S., Minj, A., Chauvat, M.P., Ruterana, P., and Kuzmík, J.: Growth evolution of N-polar Indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer, Applied Surface Sci 502 (2020) 144086.

Kučera, M., Hasenőhrl, S., Dobročka, E., Rosová, A., Eliáš, P., Gucmann, F., and Kuzmík, J.: Morphology, crystalline quality, and optical properties of MOCVDgrown InN/InAlN heterostructures. In: ASDAM 2020. Eds. T. Izsák et al. IEEE 2020. ISBN 978-1-7281-9776-0. P. 131-134.

2019

Chvála, A., Nagy, L., Marek, J., Priesol, J., Donoval, D., Šatka, A., Blaho, M., Gregušová, D., and Kuzmík, J.: Device and circuit models of monolithic InAlN/GaN NAND and NOR logic cells comprising D- and E-mode HEMTs, J. Circuits, Systems Computers 28 (2019) 1940009.

Adikimenakis, A., Androulidaki, M., Foundoulaki Salhin, E., Tsagaraki, K., Doundoulakis, G., Kuzmík, J., and Georgakilas, A.: Bandgap, electrical and structural properties of thick InN (0001) films grown under optimal conditions, IOP Conf. Ser.: J. Phys. 1190 (2019) 012010.

Gregušová, D., Tóth, L., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Cora, I., Fogarassy, Z., Stoklas, R., Seifertová, A., Blaho, M., Laurenčíková, A., Oyobiki, T., Pécz, B., Hashizume, T., and Kuzmík, J.: InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region, Japan. J. Applied Phys. 58 (2019) SCCCD21.

Chauhan, P., Hasenöhrl, S., Dobročka, E., Chauvat, M.-P., Minj, A., Gucmann, F., Vančo, Ľ., Kováč, J.jr., Kret, S., Ruterana, P., Kuball, M., Šiffalovič, P., and Kuzmík, J.: Evidence of relationship between strain and In-incorporation: growth of N-polar In-rich InAlN buffer layer by OMCVD, J. Applied Phys. 125 (2019) 105304.

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., and Kuzmík, J.: Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures, Mater. Sci in Semicond Process. 91 (2019) 356-361.

Chauhan, P., Hasenöhrl, S., Dobročka, E., Vančo Ľ., Stoklas, R., Kováč, J., Šiffalovič, P., and Kuzmík, J.: Effect of temperature and carrier gas on the properties of thick In_xAl_1-xN layer, Applied Surface Sci 470 (2019) 1-7.

Hasenöhrl, S., Chauhan, P., Dobročka, E., Stoklas, R., Vančo, Ľ., Veselý, M., Bouazzaoui, F., Chauvat, M.-P., Reterana, P., and Kuzmík, J.: Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures, Applied Phys. Express 12 (2019) 014001.

Kučera, M., Adikimenakis, A., Dobročka, E., Kúdela, R., Ťapajna, M., Laurenčíková, A., Georgakilas, A., and Kuzmík, J.: Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates, Thin Solid Films 672 (2019) 114-119.

Pohorelec, O., Ťapajna, M., Gregušová, D., Fröhlich, K., and Kuzmík, J.: Investigation of threshold voltage instabilities in MOS-gated InGaN/AlGaN/GaN HEMTs. In Proc. ADEPT. 7th Inter. Conf. on Advances in Electron. Photon. Technol. Žilina: Univ. Žilina 2019. ISBN 978-80-554-1568-0. P. 123-126.

2018

Matys, M., Nishiguchi, K., Adamowicz, J.B., Kuzmík, J., and Hashizume, T.: Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors, J. Applied Phys. 124 (2018) 224502.

Gucmann, F., Ťapajna, M., Pohorelec, O., Haščík, Š., Hušeková, K., and Kuzmík, J.: Creation of two-dinesional electron gas and role of surface donors in III-N metal-oxide-semiconductor high-electron mobility transistors, Phys. Status Solidi A 215 (2018) 1800090.

Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, I.V., Ťapajna, M., Fröhlich, , Haščík, Š., Gregor, M., and Kuzmík, J.: Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO₂ gate dielectric grown by atomic layer deposition, Applied Surface Sci 461 (2018) 255-259.

Dobročka, E., Hasenöhrl, S., Chauhan, P., and Kuzmík, J.: Non-conventional scans in high-resolution X-ray diffraction analysis of epitaxial systems, Applied Surface Sci 461 (2018) 23-32.

Hashizume, T., Nishiguchi, K., Kaneki, S., Kuzmik, J., and Yatabe, Z.: State of the art on gate insulation and surface passivation for GaN-based power HEMTs, Mater. Sci in Semicond. Process. 78 (2018) 85-95.

Chvála, A., Nagy, L., Marek, J., Priesol, J., Donoval, D., Blaho, M., Gregušová, D., Kuzmík, J., and Šatka, A.: Characterization of monolithic InAlN/GaN NAND logic cell supported by circuit and device simulations, IEEE Trans. Electron Devices 65 (2018) 2666-2669.

Blaho, M., Gregušová, D., Haščík, Š., Kuzmík, J., Chvála, A., Marek, J., and Šatka, A.: Technology and performance of E/D-mode InAlN/GaN HEMTs for mixed-signal electronics. In 2018 22^nd Inter. Microwave Radar Conf. (MIKON). Poznan: Warsaw Univ. Technol. 2018, p. 440-441. ISBN 978-83-949421-1-3.

Chvála, A., Nagy, L., Marek, J., Priesol, J., Donoval, D., Vilhan, M., Blaho, M., Gregušová, D., Kuzmík, J., and Šatka, A.: Simulation analysis of InAlN/GaN monolithic NAND logic cell. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 167-171.

Ťapajna, M., Vincze, A., Noga, P., Dobrovodsky, J., Šagátová, A., Hasenöhrl, S., Gregušová, D., and Kuzmík, J.: Determination of secondary-ions yield in SIMS depth profiling of Si, Mg, and C ions implanted GaN epitaxial layers. In: ASDAM 2018. Eds. J. Breza et al. IEEE 2018. ISBN 978-1-5386-7488-8. P. 141-144.

2017

Blaho, M., Gregušová, D., Haščík, Š., Ťapajna, M., Fröhlich, K., Šatka, A., Kuzmík, J., : Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs. Applied Phys. Lett. 111 (2017) 033506.

Graff, A., Simon-Najasek, M., Altmann, F., Kuzmík, J., Gregušová, D., Haščík, Š., Jung, J., Baur, T., Grunenputt, J., and Blanck, H.: High resolution physical analysis of ohmic contact formation at GaN-HEMT devices, Microelectron. Reliab. 76-77 (2017) 338.

Kuzmík, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M., Kúdela, R., Androulidaki, M., Pogany, D., Georgakilas, A., : Current conduction mechanism and electrical break-down in InN grown on GaN. Applied Phys. Lett. 110 (2017) 232103.

Brytavskyi, I., Gregušová, D., Ťapajna, M., Stoklas, R., Blaho, M., Seifertová, A., Hasenöhrl, S., Dobročka, E.,Kuzmík, J., : Hafnium oxide as a promising material for gate isolation in GaN-based MOS HFETs In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 207-210.

Chvála, A., Nagy, L., Marek, J., Priesol, J., Blaho, M., Kuzmík, J., Gregušová, D., Príbytný, P., Bernát, M., Donoval, D., Šatka, A., : Characterization of monolithic InAlN/GaN NAND logic cell supported by device simulation In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 40-43.

Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Tóth, L., Pecz, B., Brunner, F., Kuzmík, J., : Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties. Applied Surface Sci 426 (2017) 656-661.

Ťapajna, M., Válik, L., Gucmann, F., Gregušová, D., Fröhlich, K., Haščík, Š., Dobročka, E., Tóth, L., Pecz, B.,Kuzmík, J., : Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density. J. Vacuum Sci Technol. B 35 (2017) 01A107.

Gregušová, D., Blaho, M., Haščík, Š., Šichman, P., Laurenčíková, A., Seifertová, A., Dérer, J., Brunner, F., Würfl, H., Kuzmík, J., : Polarization-engineered n+GaN/InGaN/AlGaN/GaN normally-off MOS HEMTs. Physica Status Solidi a 214 (2017) 1700407.

Chauhan, P., Hasenöhrl, S., Hulman, M., Kováč, J., Rosová, A., Šiffalovič, P., Kuzmík, J., : Study of surface morphology and optical properties of InAlN epilayers grown on c-sapphire at different temperatures by MOCVD In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 125-128.

Nagy, L., Chvála, A., Stopjaková, V., Blaho, M., Kuzmík, J., Gregušová, D., Priesol, J., Šatka, A., : Towards standard digital cells on InAlN/GaN heterostructure In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 255-258.

2016

Gucmann, F., Gregušová, D., Válik, L., Ťapajna, M., Haščík, Š., Hušeková, K., Fröhlich, K., Pohorelec, O.,Kuzmík, J., : DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT with Al2O3 gate dielectric prepared by various techniques In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 9-12.

Ťapajna, M., Hušeková, K., Pohorelec, O., Válik, L., Haščík, Š., Gucmann, F., Fröhlich, K., Gregušová, D.,Kuzmík, J., : Effect of HCl pretreatment on the oxide/semiconductor interface state density in AlGaN/GaN MOS-HEMT structures with MOCVD grown Al2O3 gate dielectric In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 207-211.

Ťapajna, M., Hilt, O., Bahat-Triedel, E., Würfl, H., Kuzmík, J., : Gate reliability investigation in normally-off p-type-gan cap/AlGaN/GaN HEMTs under forward bias stress. IEEE Electron Device Lett. 37 (2016) 385-388.

Matys, M., Stoklas, R., Kuzmík, J., Adamowicz, J., Yatabe, Z., Hashizume, T., : Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures. J. Applied Phys. 119 (2016) 205304.

Blaho, M., Gregušová, D., Haščík, Š., Seifertová, A., Ťapajna, M., Šoltýs, J., Šatka, A., Nagy, L., Chvála, A., Marek, J., Priesol, J., Kuzmík, J., : Post-deposition annealing and thermal stability of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 177-180.

Blaho, M., Gregušová, D., Haščík, Š., Seifertová, A., Ťapajna, M., Šoltýs, J., Šatka, A., Nagy, L., Chvála, A., Marek, J., Carlin, J., Grandjean, N., Konstantinidis, G., Kuzmík, J., : Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics. Semicond. Sci Technol. 31 (2016) 065011.

Stoklas, R., Gregušová, D., Fröhlich, K., Kuzmík, J., : Temperature-dependent of sub-threshold slope of AlGaN/GaN MOSHFETs with HfO2 gate oxide prepared by ALD In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 189-192.

Ťapajna, M., Válik, L., Gregušová, D., Fröhlich, K., Gucmann, F., Hashizume, T., Kuzmík, J., : Treshold voltage instabilities in AlGaN/GaN MOS-HEMTs with ALD-grown Al2O3 gate dielectrics: relation to distribution of oxide/semiconductor interface state density In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 1-4.

2015

Kuzmík, J., Haščík, Š., Kučera, M., Kúdela, R., Dobročka, E., Adikimenakis, A., Mičušík, M., Gregor, M., Plecenik, A., Georgakilas, A., : Elimination of surface band bending on N-polar InN with thin GaN capping,. Applied Phys. Lett. 107 (2015) 191605.

Ťapajna, M., Hilt, O., Bahat-Triedel, E., Würfl, H., Kuzmík, J., : Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors. Applied Phys. Lett. 107 (2015) 193506.

Blaho, M., Gregušová, D., Haščík, Š., Jurkovič, M., Ťapajna, M., Fröhlich, K., Dérer, J., Carlin, J., Grandjean, N., Kuzmík, J., : Self-aligned normally-off metal-oxide-semiconductor n+++GaN/InAlN/GaN high-electron mobility transistors. Phys. Status Solidi A 112 (2015) 1086-1090.

Molnár, M., Donoval, D., Chvála, A., Marek, J., Príbytný, P., Ťapajna, M., Hilt, O., Brunner, F., Würfl, H.,Kuzmík, J., : Thermal management in high-power GaN HEMTs: investigation of selected thermal issues by 3-D simulation approach In: Proc. ADEPT. 3st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2015. ISBN 978-80-554-1033-3. P. 136-139.

2014

Gregušová, D., Jurkovič, M., Haščík, Š., Blaho, M., Seifertová, A., Fedor, J., Ťapajna, M., Fröhlich, K., Vogrinčič, P., Liday, J., Derluyn, J., Germain, M., Kuzmík, J., : Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth. Applied Phys. Lett. 104 (2014) 013506.

Kuzmík, J., Jurkovič, M., Gregušová, D., Ťapajna, M., Brunner, F., Cho, E., Meneghesso, G., Würfl, H., :Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown. J. Applied Phys. 115 (2014) 164504.

Bairamis, A., Adikimenakis, A., Ajagunna, A., Kehagias, T., Dimitrakopulos, G., Kioseoglou, J., Komninou, P., Zervos, C., Kuzmík, J., Georgakilas, A., : Different polarities of InN (0001) heterostructures on Si (111) substrates In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 129-132.

Ťapajna, M., Killat, N., Palankovski, V., Gregušová, D., Čičo, K., Carlin, J., Grandjean, N., Kuball, M.,Kuzmík, J., : Hot-electron-related degradation in InAlN/GaN high-electron-mobility transistors,. IEEE Trans. Electron Dev. 61 (2014) 2793-2801.

Ťapajna, M., Jurkovič, M., Válik, L., Haščík, Š., Gregušová, D., Brunner, F., Cho, E., Hashizume, T., Kuzmík, J., : Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations. J. Applied Phys. 116 (2014) 104501.

Ťapajna, M., Válik, L., Kotara, P., Zhytnytska, R., Brunner, F., Hilt, O., Bahat-Triedel, E., Würfl, H., Kuzmík, J., : Impact of the buffer structure on trapping characteristics of normally-off p-GaN/AlGaN/GaN HEMTs for power switching applications In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 121-124.

Čičo, K., Adikimenakis, A., Mičušík, M., Haščík, Š., Georgakilas, A., Kuzmík, J., : Material and electrical properties of N-polar (GaN)/InN surfaces In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 271-274.

Kuzmík, J., : Proposal of normally-off InN-channel high-electron mobility transistors. Semicond. Sci Technol. 29 (2014) 035015.

Kuzmík, J., Ťapajna, M., Válik, L., Molnár, M., Donoval, D., Fleury, C., Pogany, D., Strasser, G., Hilt, O., Brunner, F., Würfl, H., : Self-heating in GaN transistors designed for high-power operation,. IEEE Trans. Electron Dev. 61 (2014) 3429-3434.

Molnár, M., Donoval, D., Kuzmík, J., Marek, J., Chvála, A., Príbytný, P., Mikolášek, M., Rendek, K., Palankovski, V., : Simulation study of interface traps and bulk traps in n++GaN/InAlN/AlN/GaN high electron mobility transistors. Applied Surface Sci 312 (2014) 157-161.

Šatka, A., Priesol, J., Bernát, M., Donoval, D., Kováč, J., Allsopp, D., Kuzmík, J., : Time Resolved EBIC study of InAlN/GaN HFETs In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 145-148.

Šatka, A., Priesol, J., Kováč, J., Donoval, D., Allsopp, D., Kuzmík, J., : Time-resolved EBIC method for investigation of transient phenomena in GaN-based HFETs In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 152-155.

2013

Ťapajna, M., Jurkovič, M., Válik, L., Haščík, Š., Gregušová, D., Brunner, F., Cho, E., Kuzmík, J., : Bulk and interface trapping in the gate dielectric of GaN based metal–oxide–semiconductor high-electron mobility transistors. Applied Phys. Lett. 102 (2013) 243509.

Ťapajna, M., Kuzmík, J., : Control of threshold voltage in GaN based metal–oxide–semiconductor high-electron mobility transistors towards the normally-off operation. Japan. J. Applied Phys. 52 (2013) 08JN08.

Molnár, M., Palankovski, V., Donoval, D., Kuzmík, J., Kováč, J., Chvála, A., Marek, J., Príbytný, P., Selberherr, S., : Modeling and characterization of In0.12Al0.88N/GaN HEMTs at elevated temperatures. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 48-51.

Blaho, M., Gregušová, D., Jurkovič, M., Haščík, Š., Fedor, J., Kordoš, P., Fröhlich, K., Brunner, F., Cho, E., Hilt, O., Würfl, H., Kuzmík, J., : Ni/Au-Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOSHEMTs. Microelectr. Engn. 112 (2013) 204-207.

Jurkovič, M., Gregušová, D., Palankovski, V., Haščík, Š., Blaho, M., Čičo, K., Fröhlich, K., Carlin, J., Grandjean, N., Kuzmík, J., : Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region,. IEEE Electron Dev. Lett. 34 (2013) 432-434.

2012

Ťapajna, M., Kuzmík, J., : A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors. Applied Phys. Lett. 100 (2012) 113509.

Palankovski, V., Kuzmík, J., : A Promising new n++-GaN/InAlN/GaN HEMT concept for high-frequency applications ECS Transactions 50 (2012) 291-296.

Kuzmík, J., Vitanov, S., Dua, C., Carlin, J., Ostermaier, C., Alexewicz, A., Strasser, G., Pogany, D., Gornik, E., Grandjean, N., Delage, S., Palankovski, V., : Buffer-related degradation aspects of single and double-heterostructure quantum well InAlN/GaN high-electron-mobility transistors. Japan. J. Applied Phys. 51 (2012) 054102.

Palankovski, V., Donnarumma, G., Kuzmík, J., : Degradation study of single and double-heterojunction InAlN/GaN HEMTs by two-dimensional simulation ECS Transactions 50 (2012) 223-228.

Ťapajna, M., Gregušová, D., Čičo, K., Fedor, J., Carlin, J., Grandjean, N., Killat, N., Kuball, M., Kuzmík, J., : Early stage degradation of InAlN/GaN HEMTs during electrical stress. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 7-10.

Molnár, M., Donnarumma, G., Palankovski, V., Kuzmík, J., Donoval, D., Kováč, J., Selberherr, S., : Electrothermal analysis of In0.12Al0.88N/GaN HEMTs. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 55-58.

Jurkovič, M., Gregušová, D., Haščík, Š., Blaho, M., Molnár, M., Palankovski, V., Donoval, D., Carlin, J., Grandjean, N., Kuzmík, J., : GaN/InAlN/AlN/GaN normally-off HEMT with etched access region. In: WOCSDICE-EXMATEC 2012.Eds. Y. Cordier and J.-Y. Duboz. Island of Porquerolles: CRHEA & CNRS 2012.

Molnár, M., Donnarumma, G., Palankovski, V., Kuzmík, J., Donoval, D., Kováč, J., Selberherr, S., : Characterization, modeling and simulation of In0.12Al0.88N/GaN HEMTsP. In: APCOM 2012. Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2012. ISBN 978-80-227-3720-3. P. 190-194.

Čičo, K., Gregušová, D., Kuzmík, J., Jurkovič, M., Alexewicz, A., di Forte Poisson, M., Pogany, D., Strasser, G., Delage, S., Fröhlich, K., : Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation. Solid-State Electr. 67 (2012) 74-78.

Kuzmík, J., : Material and device issues of InAlN/GaN heterostructures. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 45-50.

Kuzmík, J., : N-polarity InN/GaN/InAlN high-electron-mobility transistors. Applied Phys. Express 5 (2012) 044101.

Jurkovič, M., Gregušová, D., Haščík, Š., Blaho, M., Čičo, K., Palankovski, V., Carlin, J., Grandjean, N.,Kuzmík, J., : Polarization engineered normally-off GaN/InAlN/AlN/GaN HEMT In: Inter. Workshop on Nitride Semicond. 2012 – IWN. Sapporo 2012.

2011

Čičo, K., Hušeková, K., Ťapajna, M., Gregušová, D., Stoklas, R., Kuzmík, J., Carlin, J., Grandjean, N., Pogany, D., Fröhlich, K., : Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics. J. Vacuum Sci Technol. B 29 (2011) 01A808.

Ostermaier, C., Pozzovivo, G., Carlin, J., Basnar, B., Schrenk, W., Ahn, S., Detz, H., Klang, P., Andrews, A., Douvry, Y., Gaquiere, C., De Jaeger, J., Tóth, L., Pecz, B., Gonschorek, M., Feltin, E., Grandjean, N., Strasser, G., Pogany, D., Kuzmík, J., : Improvements of high performance 2-nm-thin InAlN/AlN barrier devices by interface engineering, AIP Conf. Proc. 1399 (2011) 905-906.

Kuzmík, J., Georgakilas, A., : Proposal of InN channel high electron-mobility transistors. IEEE Trans. Electron Dev. 58 (2011) 720.

Vitanov, S., Kuzmík, J., Palankovski, V., : Study of the conduction properties of the n++ GaN cap layer in GaN/InAlN/GaN E-HEMTs Annual J. Electronics (2011) 113-116.

Kuzmík, J., Bychikhin, S., Pogany, D., Pichonat, E., Lancry, O., Gaquiere, C., Tsiakatouras, G., Deligeorgis, G., Georgakilas, A., : Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond. J. Applied Phys. 109 (2011) 086106.

2010

Donoval, D., Chvála, A., Šramatý, R., Kováč, J., Carlin, J., Grandjean, N., Pozzovivo, G., Kuzmík, J., Pogany, D., Strasser, G., Kordoš, P., : Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes. Applied Phys. Lett. 96 (2010) 223501.

Donoval, D., Chvála, A., Pozzovivo, G., Šramatý, R., Carlin, J., Kováč, J., Kuzmík, J., Strasser, G., Grandjean, N., Kordoš, P., : Current transport in Ni/InAlN/GaN Schottky diodes. In: WOCSDICE 2010. Eds. D. Pavlidis et al. Darmstadt/Seeheim: TU Darmstadt 2010. ISBN: 978-3-00-030838-3. P. 45-56.

Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Carlin, J., Gonschorek, M., Grandjean, N., Vincze, A., Tóth, L., Pecz, B., Strasser, G., Pogany, D., Kuzmík, J., : Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6 Japan. J. Applied Phys. 49 (2010) 116506.

Kohn, E., Alomari, M., Denisenko, A., Dipalo, M., Maier, D., Medjoub, F., Pietzka, C., Delage, S., di Forte Poisson, M., Morvan, E., Sarazin, N., Jacquet, J., Dua, C., Carlin, J., Grandjean, N., Py, M., Gonschorek, M.,Kuzmík, J., Pogany, D., Pozzovivo, G., Ostermaier, C., Tóth, L., Pecz, B., De Jaeger, J., Gaquiere, C., Čičo, K., Fröhlich, K., Georgakilas, A., Iliopoulos, E., Konstantinidis, G., Giessen, C., Heuken, M., Schineller, B., : InAlN/GaN heterostructures for microwave power and beyond. In: IEDM 2009. Piscataway: IEEE, 2010. ISBN 978-1-4244-5639-0. P. 173-176.

Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Schmid, M., Tóth, L., Pecz, B., Carlin, J., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., Kuzmík, J., : Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors. Applied Phys. Lett. 96 (2010) 263515.

Čičo, K., Gregušová, D., Gaži, Š., Šoltýs, J., Kuzmík, J., Carlin, J., Grandjean, N., Pogany, D., Fröhlich, K., : Optimization of the ohmic contact processing in InAlN/GaN high electron mobility transistors for lower temprerature of annealing, Phys. Status Solidi c 7 (2010) 108-111.

Kuzmík, J., Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Carlin, J., Gonschorek, M., Feltin, E., Grandjean, N., Douvry, Y., Gaquiere, C., DeJaeger, J., Čičo, K., Fröhlich, K., Škriniarová, J., Kováč, J., Strasser, G., Pogany, D., Gornik, E., : Proposal and performance analysis of normally off GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier. IEEE Trans. Electron Dev. 57 (2010) 2144-2154.

Kuzmík, J., Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Carlin, J., Gonschorek, M., Feltin, E., Grandjean, N., Douvry, Y., Gaquiere, C., De Jaeger, J., Strasser, G., Pogany, D., Gornik, E., : Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 163-166.

Ostermaier, C., Ahn, S., Potzger, K., Helm, M., Kuzmík, J., Pogany, D., Strasser, G., Hahn, S., Lee, J., : Study of Si implantation into Mg-doped GaN for MOSFETs, Phys. Status Solidi C 7 (2010) 1964–1966.

2009

Kuzmík, J., Pozzovivo, G., Ostermaier, C., Strasser, G., Pogany, D., Gornik, E., Carlin, J., Gonschorek, M., Feltin, E., and Grandjean, N.: Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors, J. Applied Phys. 106 (2009) 124503.

Abermann, S., Ostermaier, C., Pozzovivo, G., Kuzmík, J., Bethge, O., Henkel, C., Strasser, G., Pogany, D., Heuken, M., : Atomic layer deposition of high-k oxides on InAlN/GaN-based materials, ECS Trans. 25 (2009) Iss. 4, 123-129.

Abermann, S., Pozzovivo, G., Kuzmík, J., Ostermaier, C., Henkel, C., Bethge, O., Strasser, G., Pogany, D., Carlin, J., Grandjean, N., Bertagnolli, E., : Current collapse reduction in InAIM/GaN MOS hemtHEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics. Electronics Lett. 45 (2009) 570-572.

Čičo, K., Kuzmík, J., Liday, J., Hušeková, K., Pozzovivo, G., Carlin, J., Grandjean, N., Pogany, D., Vogrinčič, P., Fröhlich, K., : InAlN/GaN metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases. J. Vacuum Sci Technol. B 27 (2009) 218-222.

Ťapajna, M., Kuzmík, J., Čičo, K., Pogany, D., Pozzovivo, G., Strasser, G., Abermann, S., Bertagnolli, E., Carlin, J., Grandjean, N., Fröhlich, K., : Interface states and trapping effects in Al2O3- and ZrO2/InAlN/AlN/GaN metal-oxide-semiconductor heterostructures. Japan. J. Applied Phys. 48 (2009) 090201.

Pozzovivo, G., Kuzmík, J., Giesen, C., Heuken, M., Liday, J., Strasser, G., Pogany, D., : Low resistance ohmic contacts annealed at 600°C on a InAlN/GaN heterostructure with SiCl4-reactive ion etching surface treatment Phys. Status Solidi C 6 (2009) S999–S1002.

Kuzmík, J., Pozzovivo, G., Carlin, J., Gonschorek, M., Feltin, E., Grandjean, N., Strasser, G., Pogany, D., Gornik, E., : Off-state breakdown in InAlN/AlN/GaN high electron mobility transistors Phys. Status Solidi C 6 (2009) S925–S928.

Kuzmík, J., Bychikhin, S., Pichonat, E., Gaquiere, C., Morwan, E., Kohn, E., Teyssier, J., Pogany, D., : Self-heating phenomana in high-power III-N transistors and new thermal characterization methods developed within EU project TARGET Inter. J. Microwave and Wireless Technol. 1 (2009) 153-160.

Ťapajna, M., Čičo, K., Kuzmík, J., Pogany, D., Pozzovivo, G., Strasser, G., Carlin, J., Grandjean, N., Fröhlich, K., : Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures. Semicond. Sci Technol. 24 (2009) 035008.

Ostermaier, C., Pozzovivo, G., Carlin, J., Basnar, B., Schrenk, W., Douvry, Y., Gaquiere, C., DeJaeger, J., Čičo, K., Fröhlich, K., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., Kuzmík, J., : Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation. IEEE Electron Dev. Lett. 30 (2009) 1030-1032.

2008

Kuzmík, J., : Advances and prospects of InAlN/GaN HEMTs. In: 17th Inter. Workshop Heterostruct. Technol. Ed. G. Meneghesso. Venice 2008. P. 141-144.

Čičo, K., Gregušová, D., Kuzmík, J., di Forte Poisson, M., Lalinský, T., Pogany, D., Delage, S., Fröhlich, K., : InAlN/GaN MOSHEMT with Al2O3 insulating film. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 87-91.

Pozzovivo, G., Kuzmík, J., Golka, K., Čičo, K., Fröhlich, K., Carlin, J., Gonschorek, M., Grandjean, N., Schrenk, W., Strasser, G., Pogany, D., : Influence of GaN capping on performance of InAlN/AlN/GaN MOS-HEMT with Al2O3 gate insulation grown by CVD. Physica Status Solidi c 5 (2008) 1956-1958.

Kuzmík, J., Pozzovivo, G., Abermann, S., Carlin, J., Gonschorek, M., Feltin, E., Grandjean, N., Bertagnolli, E., Strasser, G., Pogany, D., : Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2. IEEE Trans Electron Devices 55 (2008) 937-941.

2007

Bychikhin, S., Dubec, V., Kuzmík, J., Würfl, H., Kurpas, P., Teyssier, J., Pogany, D., : Current gain collapse in HBTs analysed by transient interferometric mapping method. In: Conf. Proc. 2nd European Microwave Integrated Circuits Conference, EuMIC 2007. (2007) 28-31. ISBN 978-2-87487-002-6. (not IEE SAS).

Pozzovivo, G., Kuzmík, J., Golka, K., Schrenk, W., Strasser, G., Pogany, D., Čičo, K., Ťapajna, M., Fröhlich, K., Carlin, J., Gonschorek, M., Feltin, E., Grandjean, N., : Gate insulation and drain current saturation mechanism in InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors. Applied Phys. Lett. 91 (2007) 043509.

Kuzmík, J., Carlin, J., Gonschorek, M., Kostopoulos, A., Konstantinidis, G., Pozzovivo, G., Golka, K., Georgakilas, A., Grandjean, N., Strasser, G., Pogany, D., : Gate-lag and drain-lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs Physica status solidi (a) 204 (2007) 2019.

Kuzmík, J., Bychikhin, S., Pogany, D., Gaquiere, C., Pichonat, E., Morvan, E., : Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods. J. Applied Phys. 101 (2007) 054508.

Abermann, S., Pozzovivo, G., Kuzmík, J., Strasser, G., Pogany, D., Carlin, J., Grandjean, N., Bertagnolli, E., : MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs. Semicond. Sci Technol. 22 (2007) 1272-1275.

Čičo, K., Kuzmík, J., Gregušová, D., Stoklas, R., Lalinský, T., Georgakilas, A., Pogany, D., Fröhlich, K., :Optimization and performance of Al2O3/GaN metal-oxide-semiconductor structures. Microelectr. Reliability 47 (2007) 790-793.

Pozzovivo, G., Golka, K., Kuzmík, J., Schrenk, W., Carlin, J., Gonschorek, M., Grandjean, N., di Forte Poisson, M., Delage, S., Strasser, G., Pogany, D., : Optimization of the plasma etching in fabrication of InAlN/AlN/GaN HEMTs. In: Proc. 31st Workshop Compound Semicond. Devices and Integrated Circuits. Ed. G. Meneghesso. Venice 2007. P. 245-247.

Kuzmík, J., Pozzovivo, G., Čičo, K., Golka, K., Schrenk, W., Carlin, J., Gonschorek, M., Grandjean, N., Fröhlich, K., Strasser, G., Pogany, D., : Technology and performance of Al2O3/InAlN/AlN/GaN MOS HEMTs. In: Proc. 31st Workshop on Compound Semiconductor Devices and Integrated Circuits. Ed. G. Meneghesso. Venice: 2007. P. 359-362.

Teyssier, J., Sommet, R., Pogany, D., Kuzmík, J., Gaquiere, C., : Thermal measurement of microwave transistors and MMIC within TARGET NoE. In: Proc. Target Days 2007. Ed. P. Colantonio. Frascati (Rome) 2007. P. 67-71.

Kuzmík, J., Bychikhin, S., Lossy, R., Würfl, H., di Forte Poisson, M., Teyssier, J., Gaquiere, C., Pogany, D., :Transient self-heating effects in multifinger AlGaN/GaN HEMTs with metal airbridges. Solid-State Electronics 51 (2007) 969-974.

2006

Kuzmík, J., Bychikhin, S., Pogany, D., Gaquiere, C., Morvan, E., : Current conduction and saturation mechanism in AlGaN/GaN ungated structures. J. Applied Phys. 99 (2006) 123720.

Kuzmík, J., Kostopoulos, A., Konstantinidis, G., Carlin, J., Georgakilas, A., Pogany, D., : InAlN/GaN HEMTs: A first insight into technological optimization. IEEE Trans. Electron Dev. 53 (2006) 422-426.

Čičo, K., Kuzmík, J., Gregušová, D., Lalinský, T., Georgakilas, A., Pogany, D., Fröhlich, K., : Rapid thermal annealing and performance of Al2O3/GaN metal-oxide-semiconductor structures. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 197-200.

2005

Reggiani, S., Gnani, E., Rudan, M., Baccarani, G., Bychikhin, S., Kuzmík, J., Pogany, D., Gornik, E., Denison, M., Jensen, N., Groos, G., Stecher, M., : A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique, IEEE Electron Device Lett. 26 (2005) 916-918.(Not IEE SAS).

Bychikhin, S., Vandamme, L., Kuzmík, J., Meneghesso, G., Levada, S., Zanoni, E., Pogany, D., : Accelerated aging og GaN light emitting diodes studied by 1/f and RTS noise, AIP Conf. Proc. 780 (2005) 709-712.

Reggiani, S., Gnani, E., Rudan, M., Baccarani, G., Bychikhin, S., Kuzmík, J., Pogany, D., Gornik, E., Denison, M., Jensen, N., Groos, G., Stecher, M., : Predictive device simulation for ESD protection structures validated with transient interferometric thermal – mapping experiments. In: ESSDERC’05. Eds. G. Ghibaudo et al. ISBN0-7803-9203-5. Piscataway, IEEE 2005. P. 411-414.

Kuzmík, J., Carlin, J., Kostopoulos, T., Konstantinidis, G., Georgakilas, A., Pogany, D., : Technology, properties and limitations of state-of-the-art InAlN/GaN HEMTs. In: 63rd Device Research Conf. Santa Barbara 2005. Conf. Digest p. 57-58.

Osvald, J., Kuzmík, J., Konstantinidis, G., Lobotka, P., Georgakilas, A., : Temperature dependence of GaN Schottky diodes I–V characteristics. Microelectronic Engn. 81 (2005) 181-187.

Kuzmík, J., Bychikhin, S., Neuburger, M., Dadgar, A., Krost, A., Kohn, E., Pogany, D., : Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon. IEEE Trans. Electron Dev. 52 (2005) 1698-1705.

2004

Kuzmík, J., Pogany, D., Gornik, E., Javorka, P., Kordoš, P., : Electrical overstress in AlGaN/GaN HEMTs: study of degradation processes. Solid-State Electronics 48 (2004) 271-276.

Bychikhin, S., Vandamme, L., Kuzmík, J., Meneghesso, G., Pogany, D., : Low frequency noise characterization of the GaN LEDs. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 85-86.

Kuzmík, J., Konstantinidis, G., Harasek, S., Haščík, Š., Bertagnolli, E., Georgakilas, A., Pogany, D., :ZrO2/(Al)GaN metal–oxide–semiconductor structures: characterization and application. Semiconductor Sci Techn. 19 (2004) 1364-1368.

Kuzmík, J., Harasek, S., Konstantinidis, G., Haščík, Š., Pogany, D., Bertagnolli, E., Georgakilas, A., : ZrO2/GaN metal oxide semiconductor structures characterization and application. In: 28th Workshop Compound Semicond. Devices Integrated Circuits. Eds. D.Pogany and A.Vincze. Bratislava: FEEIT STU 2004. P. 35-36.

2003

Kuzmík, J., Blaho, M., Pogany, D., Gornik, E., Alam, A., Dikme, Y., Heuken, M., Javorka, P., Marso, M., Kordoš, P., : Backgating, high-current and breakdown characterisation of AlGaN/GaN HEMTs on silicon substrates. In: ESSDERC 2003. Eds. J. Franca, P.Freitas. Piscataway: IEEE 2003. ISBN: 0-7803-7999-3. P. 319-322.

Kuzmík, J., Pogany, D., Gornik, E., Javorka, P., Kordoš, P., : Electrostatic discharge effects in AlGaN/GaN high-electron-mobility transistors. Applied Phys. Lett. 83 (2003) 4655-4657.

Javorka, P., Alam, A., Marso, M., Wolter, M., Kuzmík, J., Fox, A., Heuken, M., Kordoš, P., : Material and device issues of AlGaN/GaN HEMTs on silicon substrates. Microelectr. J. 34 (2003) 435-437.

Pogany, D., Bychikhin, S., Kuzmík, J., Dubec, V., Jensen, N., Denison, M., Groos, G., Stecher, M., Gornik, G., : Thermal distribution during destructive pulses in ESD protection devices using a single-shot, two-dimensional interferometric method IEEE Trans. Device Mater. Reliability 3 (2003) 197-201.

Pogany, D., Bychikhin, S., Pflugl, C., Dubec, V., Kuzmík, J., Blaho, M., Litzenberger, M., Strasser, G., Gornik, E., : Thermal mapping of semiconductor devices with nanosecond resolution. In: GaAs 2003, Europ. Microwave Week. Munich 2003. P. 105-131.

Pogany, D., Bychikhin, S., Dubec, V., Blaho, M., Litzenberger, M., Kuzmík, J., Pflugl, C., Strasser, G., Gornik, E., : Transient interferometric mapping of temperature and free carriers in semiconductor devices. In: 2003 IEEE LEOS Annual Meeting Conf. Proc. Vol. 2. IEEE 2003. P. 666-667.

2002

Kuzmík, J., Javorka, P., Marso, M., Kordoš, P., : Annealing of Schottky contacts deposited on dry etched AlGaN/GaN. Semicond. Sci Technol. 17 (2002) L76-L78.

Kuzmík, J., Javorka, P., Alam, A., Marso, M., Heuken, M., Kordoš, P., : Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method. IEEE Trans. Electron Dev. 49 (2002) 1496-1498.

Pogany, D., Kuzmík, J., Darmo, J., Litzenberger, S., Bychikhin, S., Unterrainer, K., Mozolová, Ž., Haščík, Š., Lalinský, T., Gornik, E., : Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using backside infrared OBIC technique. Microelectron. Reliability 42 (2002) 1673-1677.

Kuzmík, J., : InAlN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal. Semicond. Sci Technol. 17 (2002) 540-544.

2001

Kuzmík, J., Hasenöhrl, S., Kúdela, R., Haščík, Š., Mozolová, Ž., Lalinský, T., Breza, J., Vogrinčič, P., Škriniarová, J., Fox, A., Kordoš, P., : InGaAs/InGaP HEMTs: technological optimization and analytical modelling. Vacuum 61 (2001) 333-337.

Kuzmík, J., Javorka, P., Alam, A., Marso, M., Heuken, M., Kordoš, P., : Investigation of self-heating effects in AlGaN/GaN HEMTs. In: EDMO 2001. Vienna: TU, 2001. P. 21.

Kuzmík, J., : Power electronics on InAlN/(In)GaN: prospect for a record performance. IEEE Electron Devices Lett. 22 (2001) 510-512.

Amimer, K., Georgakilas, A., Androulidaki, M., Tsagaraki, K., Pavelescu, M., Mikroulis, S., Constantinidis, G., Arbiol, J., Peiro, F., Cornet, A., Calamiotou, M., Kuzmík, J., Davydov, V., : Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy. Materials Sci & Engn. B 80 (2001) 304-308.

Lalinský, T., Škriniarová, J., Kuzmík, J., Hasenöhrl, S., Fox, A., Tomáška, M., Mozolová, Ž., Kordoš, P., Kovačik, T., Haščík, Š., : Technology and performance of 150 nm gate length InGaP/InGaAs/GaAs pHEMTs. Vacuum 61 (2001) 323-327.

2000

Lalinský, T., Burian, E., Držík, M., Haščík, Š., Mozolová, Ž., Kuzmík, J., Hatzopoulos, Z., : Performance of GaAs micromachined microactuator. Sensors Actuators A 85 (2000) 365-370.

Lalinský, T., Burian, E., Držík, M., Haščík, Š., Mozolová, Ž., Kuzmík, J., : Thermal actuation of a GaAs cantilever beam J. Micromechanics Microengn. 10 (2000) 293-298.

Kuzmík, J., : β-SiC growth on Si by reactive-ion molecular beam epitaxy Acta Physica Slovaca 50 (2000) 545-548.

1999

Lalinský, T., Burian, E., Držík, M., Kuzmík, J., Haščík, Š., Mozolová, Ž., : GaAs cantilever based thermally excited microactuator. In: MME ’99. Orsay: Inst. d’Electronique Fondamentale, 1999. P. 219-222.

1998

Matsumoto, K., Chen, Y., Kuzmík, J., Nishino, S., : 6H-SiC Schottky diode edge terminated using amorphous SiC by sputterning method, Mater. Sci Forum 264-268 (1998) 925. (Not IEE SAS).

Lalinský, T., Haščík, Š., Mozolová, Ž., Kuzmík, J., Hatzopoulos, Z., : GaAs power sensor microsystem technology and characterization Sensors Mater. 10 (1998) 241.

Haščík, Š., Lalinský, T., Mozolová, Ž., Kuzmík, J., : Patterning of cantilever for power sensor microsystem Vacuum 51 (1998) 307.

Constantinidis, G., Kuzmík, J., Michelakis, K., Tsagaraki, K., : Schottky contacts on CF4/H2 Reactive ion etched -SiC Solid State Electron. 42 (1998) 253.

Lalinský, T., Držík, M., Haščík, Š., Mozolová, Ž., Kuzmík, J., Hatzopoulos, Z., : Study of bimetallic efekt in GaAs cantilever beam of power sensor microsystem. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 331.

Pogany, D., Lalinský, T., Kuzmík, J., Mozolová, Ž., : Study of thermall effects in GaAs micromachined power sensor microsystem by an optical interferometer technique Microelectron. J. 29 (1998) 191.

Lalinský, T., Hotový, I., Haščík, Š., Mozolová, Ž., Kuzmík, J., Pogany, D., : Thin films resistence temperature sensor on GaAs. In: ASDAM 98. Ed. J.Breza. Piscataway: IEEE 1998. P. 243.

1997

Lalinský, T., Haščík, Š., Mozolová, Ž., Burian, E., Kuzmík, J., : Micromachined power sensor microsystems based on GaAs cantilever beams, Nexus Academic Newslett. (1997) 13.

Constantinidis, G., Kuzmík, J., Michelakis, K., : Schottky contact investigation on reactive ion etched 6H -SiC Diamond Related Mater. 6 (1997) 1459.

Kuzmík, J., Darmo, J., Kúdela, R., Haščík, Š., Mozolová, Ž., : Schottky contacts on reactive-ion etched InGaP J. Vacuum Sci Technol. B 15 (1997) 2016.

Lalinský, T., Burian, E., Mozolová, Ž., Haščík, Š., Kuzmík, J., Boháček, P., Hatzopoulos, Z., : The improvement in GaAs power sensor microsystem technology and simulation. In: MICROSIM II: Simulation and Design of Microsystems and Microstructures. Eds. R.A.Adey and P.Renaud. Southamton: Comput. Mechan. Publ. 1997. ISBN-13: 978-1853125010. P. 43-51.

1996

Haščík, Š., Lalinský, T., Kuzmík, J., Porges, M., Mozolová, Ž., : Fabrication of thin GaAs cantilever beams for power sensor microsystem by RIE Vacuum 47 (1996) 1215-1217.

Lalinský, T., Kuzmík, J., Haščík, Š., Mozolová, Ž., Hatzopoulos, Z., : GaAs power sensor microsystem technology and characterization. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 301.

Malacký, L., Kuzmík, J., Mozolová, Ž., Kučera, M., Lubke, K., Wehmann, H., : InGaAs/GaAs pseudomorphic double delta dopes Hemts. Some limitations of design. In: HEAD 95. Eds. J.Novák et el. NATO ASI Series 3, High Technol. 11. Dordrecht: Kluwer Acad. Publ. 1996. P. 277.

Pogany, D., Lalinský, T., Seliger, N., Kuzmík, J., Habaš, P., Hrkút, P., Gornik, E., : Power sensor microsystems characterization using a contactless optical laser method. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 201.

Constantinidis, G., Kuzmík, J., Michelakis, K., : Schottky contacts on reactive-ion etched ß-SiC. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 21.

Kuzmík, J., Darmo, J., Haščík, Š., Kúdela, R., Mozolová, Ž., : Study of Schottky contact formation on RIE-etched InGaP. In: ASDAM 96. Ed. T.Lalinský et. al. Bratislava: 1996. P. 9.

Lalinský, T., Burian, E., Mozolová, Ž., Haščík, Š., Kuzmík, J., Boháček, P., Hatzopoulos, Z., : The improvement in a GaAs power sensor microsystem technology and simulation. In: MICROSIM II. Ed. R.A.Adey. Southampton: Comput. Mechanics Publ. 1996. P. 43-51.

1995

Lalinský, T., Porges, M., Šafránková, J., Kuzmík, J., Boháček, P., Mozolová, Ž., Ďuríček, L., : GaAs submicron heterostructure devices. In: Miteko ’95. Pardubice 1995. P. 63.

Lalinský, T., Kuzmík, J., Porges, M., Haščík, Š., Mozolová, Ž., Grno, L., : Monolithic GaAs MESFET power sensor microsystem Electron. Lett. 31 (1995) 1914.

1994

Kuzmík, J., Georgakilas, A., : Study of Schottky contact formation on CH4/H2 reactive-ion-etched InAlAs Semicond. Sci Technol. 9 (1994) 1226.

1993

Kuzmík, J., Lalinský, T., Seidel, P., : Coimplantation of Mg and Si in GaAs MESFETs Solid State Electr. 36 (1993) 427.

Kuzmík, J., Michelakis, K., Konstantinidis, G., Papanicolaou, N., : Reactive ion etching of beta-SiC in CCl2F2/O2 Electron. Lett. 29 (1993) 18.

1992

Lalinský, T., Kuzmík, J., Gregušová, D., Mozolová, Ž., Breza, J., Feciško, M., Seidel, P., : Properties of WN x/GaAs Schottky contacts prepared by ion implantation of nitrogen J. Materials Sci 3 (1992) 157.

Papaioannou, G., Ioannou-Sougleridis, V., Lalinský, T., Kuzmík, J., Porges, M., Kourkoustas, C., : The PHOTOFET method in submicrometer GaAs MESFETs: substrate leakage current effect Semicond. Sci Technol. 7 (1992) 935.

1990

Porges, M., Lalinský, T., Mozolová, Ž., Kuzmík, J., : A three layer model of p lanar alloyed ohmic contacts to n-GaAs Solid-State Electr. 33 (1990) 1531.

Kuzmík, J., Lalinský, T., : Correlation between the Backgating effect and the gate lenght shortening on GaAs MESFETs Physica Status Solidi A 119 (1990) K185.

Kuzmík, J., Lalinský, T., Mozolová, Ž., Porges, M., : DC performance of short ion-implanted GaAsMESFETs, the role of gate length shortening Solid-State Electr. 33 (1990) 1223.

1989

Malacký, L., Kuzmík, J., Cambel, V., : Optical properties of metal GaInAs contacts for Schottky photodiodes Phys. Status Solidi A 115 (1989) K121.

Šafránková, J., Lalinský, T., Kuzmík, J., Mozolová, Ž., Porges, M., Gregušová, D., : Preparation and properties of GaAs double-Schottky-interdigitated photodetectors, Crystal Propert. Preparation 19-20 (1989) 315.

Lalinský, T., Kuzmík, J., Porges, M., Mozolová, Ž., Gregušová, D., : Technology and characterization of a submicrometer GaAs length GaAs MESFETs, Crystal Propert. Preparation 19-20 (1989) 259.

1987

Lalinský, T., Mozolová, Ž., Haščík, Š., Guldan, A., Porges, M., Kuzmík, J., : Využitie plazmového leptania v technológii GaAs MESFET štruktúr. In: 6. čs. konf. o tenkých vrstvách 1987. Ed. Z.Hájek. Praha: JČSMF 1987. S. 92.

1986

Lalinský, T., Chromik, Š., Porges, M., Gregušová, D., Kuzmík, J., Breza, J., : Problémy technológie, elektrickej charakterizácie a spoľahlivosti ohmických kontaktov na GaAs, Elektrotechn. časopis 37 (1986) 354.

Ing. Ján KUZMÍK, DrSc.