Ing. JÁn ŠOLTÝS, PhD.

  • 2018

Kúdela, R., Šoltýs, J., Kučera, M., Stoklas, R., Gucmann, F., Blaho, J., Mičušík, M., Pohorelec, O., Gregor, M., Brytavskyi, I.V., Dobročka, E., and Gregušová, D.: Technology and application of in-situ AlOx layers on III-V semiconductors, Applied Surface Sci 461 (2018) 33-38.

Szívós, J., Pothorszky, S., Šoltýs, J., Serényi, M., An, H., Gao, T., Deák, A., Shi, J., and Sáfrán, G.: CoPt/TiN films nanopatterned by RF plasma etching towards dot-patterned magnetic media, Applied Surface Sci 435 (2018) 31-38.

Šoltýs, J., Precner, M., Fedor, J., and Cambel, V.: Tailored SPM probes for dual-tip force microscopy. In: NANOCON 2017. Brno: Tanger Ltd., 2018, p. 759-764. ISBN 978-8-0872-9481-9.

  • 2017
Neilinger (Sečianska), K., Šoltýs, J., Mruczkiewicz, M., Dérer, J., Cambel, V., : Dual-cantilever magnetometer for study of magnetic interactions between patterned permalloy microstructures. J. Magnetism Magnetic Mater. 444 (2017) 354-360. (APVV 0088-12). (CENTE II). (VEGA 2/0183/15).

 

Pribulová, Z., Medvecká, Z., Kačmarčík, J., Komanický, V., Klein, T., Rodière, P., Levy-Bertrand, F., Michon, B., Marcenat, C., Barančeková Husaníková, P., Cambel, V., Šoltýs, J., Karapetrov, G., Borisenko, S., Evtushinsky, D., Berger, H., Samuely, P., : Magnetic and thermodynamic properties of CuxTiSe2 single crystals. Phys. Rev. B 95 (2017) 174512.

 

Neilinger (Sečianska), K., Šoltýs, J., Cambel, V., : Study of magnetic micro-ellipses by cantilever sensor. Acta Phys. Polonica A 131 (2017) 833-836. (CENTE). (VEGA 2/0183/15).

 

  • 2016
Neilinger (Sečianska), K., Šoltýs, J., Truchly, M., Dérer, J., Cambel, V., : Fabrication of double cantilever sensor for study of magnetic microstructures. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 61-64..(CENTE II). (VEGA 2/0183/15).

 

Medvecká, Z., Klein, T., Cambel, V., Šoltýs, J., Karapetrov, G., Levy-Bertrand, F., Michon, B., Marcenat, C., Pribulová, Z., Samuely, P., : Observation of a transverse Meissner effect in CuxTiSe2 single crystals. Phys. Rev. B 93 (2016) 100501(R). (APVV 0036-11). (APVV 51-040605).

 

Blaho, M., Gregušová, D., Haščík, Š., Seifertová, A., Ťapajna, M., Šoltýs, J., Šatka, A., Nagy, L., Chvála, A., Marek, J., Priesol, J., Kuzmík, J., : Post-deposition annealing and thermal stability of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 177-180. (APVV 15-0673).

 

Kačmarčík, J., Pribulová, Z., Samuely, T., Szabó, P., Cambel, V., Šoltýs, J., Herrera, E., Suderow, H., Correa-Orellana, A., Prabhakaran, D., Samuely, P., : Single-gap superconductivity in ẞ-Bi2Pd. Phys. Rev. B 93 (2016) 144502. (APVV 0036-11).

 

Blaho, M., Gregušová, D., Haščík, Š., Seifertová, A., Ťapajna, M., Šoltýs, J., Šatka, A., Nagy, L., Chvála, A., Marek, J., Carlin, J., Grandjean, N., Konstantinidis, G., Kuzmík, J., : Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics. Semicond. Sci Technol. 31 (2016) 065011. (CENTE). (APVV 0367-11). (VEGA 2/0138/14).

 

  • 2015
Neilinger (Sečianska), K., Šoltýs, J., Tóbik, J., Dérer, J., Cambel, V., : Cantilever sensor for study of magnetic microstructures In: Proc. 21th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2015). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2015. ISBN 978-80-227-4373-0. P. 189-193. (VEGA 2/0183/15). (ASFEU ITMS 26240220088).

 

Precner, M., Fedor, J., Šoltýs, J., Cambel, V., : Dual-tip magnetic force microscopy with suppressed influence on magnetically soft samples. Nanotechnol. 26 (2015) 055304.. (APVV 0088-12). (Vega 2/0037/12). (CENTE).

 

Ščepka, T., Polakovič, T., Šoltýs, J., Tóbik, J., Kulich, M., Kúdela, R., Dérer, J., Cambel, V., : Individual vortex nucleation/annihilation in ferromagnetic nanodots with broken symmetry observed by micro/Hall magnetometry. AIP Adv. 5 (2015) 117205.. (APVV 0088-12). (APVV 0036-11). (CENTE).

 

Kúdela, R., Gregušová, D., Šoltýs, J., Kučera, M., Dobročka, E., : Technology and application of in-situ alox layers on III-V semiconductors. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 87-88.. (VEGA 2/0105/13). (APVV 14-0297).

 

  • 2014
Štrbik, V., Reiffers, M., Dobročka, E., Šoltýs, J., Španková, M., Chromik, Š., : Epitaxial LSMO thin films with correlation of electrical and magnetic properties above 400K. Applied Surface Sci 312 (2014) 212-215.(APVV-0494-11). (VEGA 2/0173/13). (VEGA 2/0120/14).

 

Precner, M., Fedor, J., Tóbik, J., Šoltýs, J., Cambel, V., : High resolution tips for switching magnetization MFM. Acta Phys. Polonica A 126 (2014) 386-387. (APVV 0088-12). (Vega 2/0037/12). (CENTE).

 

Pribulová, Z., Medvecká, Z., Kačmarčík, J., Komanický, V., Klein, T., Barančeková Husaníková, P., Cambel, V.,Šoltýs, J., Karapetrov, G., Samuely, P., : Local magnetometry of Cu0,064TiSe2. Acta Phys. Polonica A 126 (2014) 370-371. (APVV 0036-11).

 

Barančeková Husaníková, P., Cambel, V., Fedor, J., Šoltýs, J., Karapetrov, G., : Magnetization studies of Cu0.058TiSe2 near a quantum critical point. Acta Phys. Polonica A 126 (2014) 336-337. (APVV 0036-11). (CENTE).

 

Ščepka, T., Šoltýs, J., Precner, M., Fedor, J., Tóbik, J., Gregušová, D., Gucmann, F., Kúdela, R., Cambel, V., : Vortex dynamics in ferromagnetic nanoelements observed by micro-hall probes. Acta Phys. Polonica A 126 (2014) 390-391. (APVV 0088-12). (Vega 2/0037/12). (CENTE).

 

  • 2013
Huran, J., Balalykin, N., Hotový, I., Šoltýs, J., Feshchenko, A., Haščík, Š., : GaAs mesh type transmission photocathode prepared by inductively oupled plasma CCl2F2 etching of GaAs substrate. In: Proc. ADEPT. 1st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 233-236. (ITMS 26240220041).

 

Cambel, V., Precner, M., Fedor, J., Šoltýs, J., Tóbik, J., Ščepka, T., Karapetrov, G., : High resolution switching magnetization magnetic force microscopy. Applied Phys. Lett. 102 (2013) 062405. (ITMS 26240220041). (Vega 2/0037/12).

 

Hudec, B., Hušeková, K., Rosová, A., Šoltýs, J., Rammula, R., Kasikov, A., Uustare, T., Mičušík, M., Omastová, M., Aarik, J., Fröhlich, K., : Impact of plasma treatment on electrical properties of TiO2/RuO2 based DRAM capacitor. J. Phys. D 46 (2013) 385304. (APVV 0133-07). (VEGA 2-0147-11). (KCMTE).

 

Šoltýs, J., Gaži, Š., Fedor, J., Tóbik, J., Precner, M., Cambel, V., : Magnetic nanostructures for non-volatile memories. Microelectr. Engn. 110 (2013) 474-478. (APVV 0036-11). (Vega 2/0037/12). (ITMS 26240220041). (CENTE II).

 

Barančeková Husaníková, P., Fedor, J., Dérer, J., Šoltýs, J., Cambel, V., Iavarone, M., May, S., Karapetrov, G., : Magnetization properties and vortex phase diagram of CuxTiSe2 single crystals. Phys. Rev. B 88 (2013) 174501. (APVV 0036-11). (ITMS 26220220170).

 

Kúdela, R., Šoltýs, J., Vincze, A., Novák, J., : Tellurium delta-doped InGaP layers grown by metalorganic vapour phase epitaxy. Phys. Status Solidi RRL 7 (2013) 443–446. (APVV 0301-10). (VEGA 2/0081/09).

 

Cambel, V., Tóbik, J., Šoltýs, J., Fedor, J., Precner, M., Gaži, Š., Karapetrov, G., : The influence of shape anisotropy on vortex nucleation in Pacman-like nanomagnets,. J. Magnetism Magnetic Mater. 336 (2013) 29-36. (ITMS 26240220041). (Vega 2/0037/12).

 

Hasenöhrl, S., Eliáš, P., Šoltýs, J., Stoklas, R., Laurenčíková, A., Novák, J., : Zinc-doped gallium phosphide nanowires for photovoltaic structures,. Applied Surface Sci 269 (2013) 72-76. (VEGA 2/0081/09). (APVV 0301-10). (APVV LPP-0162-09).

 

  • 2012
Meško, M., Vretenár, V., Kotrusz, P., Hulman, M., Šoltýs, J., Skákalová, V., : Carbon nanowalls synthesis by means of atmospheric dcPECVD method. Phys. Status Solidi B 249 (2012) 2625–2628.

 

Ščepka, T., Gregušová, D., Gaži, Š., Haščík, Š., Fedor, J., Šoltýs, J., Kúdela, R., Cambel, V., : Detection elements for on-cantilever laboratory. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 91-94. (CENTE).

 

Novák, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Stoklas, R., Laurenčíková, A., Mikulics, M., : Electrical and photoluminescence properties of individual GaP nanowires doped by zinc Phys. Status Solidi a 209 (2012) 2505-2509. (APVV 0301-10). (APVV LPP-0162-09). (VEGA 2/0081/09).

 

Precner, M., Gregušová, D., Šoltýs, J., Fedor, J., Gucmann, F., Tóbik, J., Kúdela, R., Cambel, V., : Nucleation and annihilation of magnetic vortices in Pacman-like nanodots observed by micro-Hall probes. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 87-90.

 

  • 2011
Hasenöhrl, S., Novák, J., Vávra, I., Šoltýs, J., Kučera, M., Šatka, A., : Epitaxial growth of GaP/InxGa1-xP (xIn ≥ 0,27) virtual substrate for optoelectronic applications, J. Electr. Engn. 62 (2011) 93-98.

 

Šoltýs, J., Kúdela, R., Kučera, M., Eliáš, P., Novák, J., Cambel, V., Vávra, I., Kostič, I., : Characterization of an AlGaAs/GaAs quantum well prepared on objects of pyramidal shape. J. Crystal Growth 316 (2011) 67-70.(VEGA 2/0081/09).

 

Eliáš, P., Kostič, I., Šoltýs, J., : Patterning of pyramidal recesses in (1 0 0)InP substrate. Microelectr. Engn. 88 (2011) 36-40. (VEGA 2/0081/09).

 

Cambel, V., Šoltýs, J., : Skenovacie mikroskpie. In: Kryofyzika a nanoelektronika. Košice: ÚEF SAV, 2011. ISBN 978-80-968060-9-6. S. 269-305.

 

  • 2010
Novák, J., Vávra, I., Križanová, Z., Hasenöhrl, S., Šoltýs, J., Reiffers, M., Štrichovanec, P., : Dependence of Curie temperature on surface strain in InMnAs epitaxial structures. Applied Surface Sci 256 (2010) 5672-5675.

 

Telek, P., Hasenöhrl, S., Šoltýs, J., Vávra, I., Držík, M., Novák, J., : Design, preparation and properties of spin-LED structures based on InMnAs. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 175-178.

 

Gregušová, D., Kúdela, R., Eliáš, P., Šoltýs, J., Kostič, I., Cambel, V., : GaAs/AlAs/InGaP heterostructure: a versatile material basis for cantilever designs. J. Micromech. Microeng. 20 (2010) 097001.

 

Hušeková, K., Dobročka, E., Rosová, A., Šoltýs, J., Šatka, A., Fillot, F., Fröhlich, K., : Growth of RuO2 thin films by liquid injection atomic layer deposition. Thin Solid Films 518 (2010) 4701-4704.

 

Čičo, K., Gregušová, D., Gaži, Š., Šoltýs, J., Kuzmík, J., Carlin, J., Grandjean, N., Pogany, D., Fröhlich, K., : Optimization of the ohmic contact processing in InAlN/GaN high electron mobility transistors for lower temprerature of annealing, Phys. Status Solidi c 7 (2010) 108-111.

 

Novák, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Vávra, I., : Study of the growth and structural properties of InMnAs dots grown on high-index surfaces by MOVPE. Mater. Sci Semicond. Proc. 13 (2010) 167-172.

 

  • 2009
Kúdela, R., Kučera, M., Dobročka, E., Šoltýs, J., : AlGaAs/InGaP interfaces in structures prepared by MOVPE. J. Crystal Growth 311 (2009) 3123-3129. (APVV 51-045705).

 

Novák, J., Vávra, I., Šoltýs, J., Hasenöhrl, S., Reiffers, M., Štrichovanec, P., : Effect of nanodimension on the properties of III-V ferromagnetic semiconductors. In: Proc. 17th Conf. Slovak Physicists. Ed. M. Reiffers. Bratislava: Slovak Phys. Soc., 2009. ISBN 978-80-969124-7-6. P. 13-16.

 

Kúdela, R., Gregušová, D., Stoklas, R., Šoltýs, J., Kučera, M., Dobročka, E., Kordoš, P., : HEMT transistors with aluminum oxide and InGaP layers. In: EW-MOVPE XIII. Ulm Univ. 2009. P. 225-228.

 

  • 2008
Novák, J., Vávra, I., Hasenöhrl, S., Šoltýs, J., Štrichovanec, P., Balazsi, K., : Influence of GaAs cap layer on the relaxation of InMnAs dots. In: APCOM 2008. Eds. J. Vajda et al. Bratislava: FEI STU, 2008. P. 171-174.

 

Novák, J., Eliáš, P., Šoltýs, J., Hasenöhrl, S., Vávra, I., : InMnAs dots grown on GaAs surfaces etched via AlAs sacrificial layer. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 219-222.

 

Cambel, V., Martaus, J., Šoltýs, J., Kúdela, R., Gregušová, D., : Local anodic oxidation by AFM tip developed for novel semiconductor nanodevices. Ultramicroscopy 108 (2008) 1021-1024.

 

Martaus, J., Gregušová, D., Cambel, V., Kúdela, R., Šoltýs, J., : New approach to local anodic oxidation of semiconductor heterostructures. Ultramicroscopy 108 (2008) 1086-1089.

 

Cambel, V., Šoltýs, J., : Skenovacia sondová mikroskpia vo výskume povrchov materiálov. In: Rozprávanie o materiáloch. Bratislava: ÚMMS SAV, 2008. ISBN 978-80-970027-6-3. S. 81-92.

 

  • 2007
Cambel, V., Martaus, J., Šoltýs, J., Kúdela, R., Gregušová, D., : AFM nanooxidation process – technology perspective for mesoscopic structures. Surface Sci. 601 (2007) 2717-2723. (APVV 51-045705).

 

Martaus, J., Gregušová, D., Cambel, V., Kúdela, R., Šoltýs, J., : AFM tip induced local anodic oxidation of InGaP/AlGaAs/GaAs heterostructures. In: EW-MOVPE XII: extended abstracts. Bratislava: IEE SAS, 2007. P. 299-302.

 

Bartolome, E., Pavau, A., Guitierrez, J., Granados, X., Pomar, A., Puig, T., Obradors, X., Cambel, V., Šoltýs, J., Gregušová, D., Chen, D., Sanchez, A., : Artificial magnetic granularity effects on patterned epitaxial YBa2Cu3O7-x thin films. Phys. Rev. B 76 (2007) 094508.

 

Štrichovanec, P., Kúdela, R., Vávra, I., Kováč, J., Šoltýs, J., Novák, J., : Characterization of corrugated MQW heterostructure prepared on patterned (001) GaAs substrate by MOVPE Physica Status Solidi c 4 (2007) 1499-1502.

 

Cambel, V., Karapetrov, G., Novosad, V., Bartolome, E., Gregušová, D., Fedor, J., Kúdela, R., Šoltýs, J., :Novel Hall sensors developed for magnetic field imaging systems. J. Magnetism Magn. Mater. 316 (2007) 232-235. (APVV 51-045705).

 

Šoltýs, J., Cambel, V., Kúdela, R., Eliáš, P., : Study into the shape of oxide lines formed by LAO – influence an oxidized material. Surface Sci 601 (2007) 2876-2880.

 

Šoltýs, J., Gregušová, D., Kúdela, R., Kostič, I., Cambel, V., : Study of epitaxially overgrown pyramids developed for active tips in scanning force microscopy. In: EW-MOVPE XII: extended abstracts. Bratislava: IEE SAS, 2007. P. 297-298.

 

Eliáš, P., Šoltýs, J., Kostič, I., : Study of ordinary facets revealed in (100) InP by etching in HCl. Mater. Sci Engn. B 138 (2007) 172-179. (APVV 51-045705).

 

Cambel, V., Šoltýs, J., : The influence of sample conductivity on local anodic oxidation by the tip of atomic force microscope. J. Applied Phys. 102 (2007) 074315. (APVV 51-045705).

 

  • 2006
Martaus, J., Cambel, V., Kúdela, R., Gregušová, D., Šoltýs, J., : 2D electron transport through potential barrier prepared by LAO on shallow GaAs/AlxGa1-xAs/InGaP heterostructures. In: ASDAM 2006. Eds. J. Breza et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 253-256.

 

Haščík, Š., Eliáš, P., Šoltýs, J., Martaus, J., Hotový, I., : CCl4-based reactive ion etching of semi-insulating GaAs and InP. Czechoslov. J. Phys. B 56 (2006) S1169-S1173.
Eliáš, P., Haščík, Š., Martaus, J., Kostič, I., Šoltýs, J., Hotový, I., : CCl4-based RIE pattern transfer into facets of mesas formed by wet etching in InP(100). Electrochem. Solid-State Lett. 9 (2006) G27-G30.

 

Šoltýs, J., Gregušová, D., Kúdela, R., Šatka, A., Kostič, I., Cambel, V., : Formation of sharp-apex pyramids for active tips used in scanning probe microscopy. In: ASDAM 2006. Eds. J. Breza. et al. Piscataway: IEEE 2006. ISBN: 1-4244-0396-0. P. 105-108.

 

Cambel, V., Šoltýs, J., Martaus, J., Moško, M., : IV characteristics in structures prepared by tip induced oxidation J. de Physique IV 132 (2006) 171-175.

 

Gregušová, D., Eliáš, P., Öszi, Z., Kúdela, R., Šoltýs, J., Fedor, J., Cambel, V., Kostič, I., : Technology and properties of a vector hall sensor. Microelectronics J. 37 (2006) 1543-1546.

 

  • 2005
Eliáš, P., Martaus, J., Šoltýs, J., Kostič, I., : Micromachining of mesa and pyramidal-shaped objects in (1 0 0) InP substrates. J. Micromech. Microengn. 15 (2005) 1007-1014.

 

Štrichovanec, P., Novák, J., Vávra, I., Kúdela, R., Kučera, M., Šoltýs, J., : QWIP structures prepared on wet-etched non-planar GaAs. Phys. Status Solidi c 2 (2005) 1384-1388.

 

Španková, M., Vávra, I., Chromik, Š., Harasek, S., Lupták, R., Šoltýs, J., Hušeková, K., : Structural properties of Y2O3 thin films grown on Si(1 0 0) and Si(1 1 1) substrates,. Materials Sci Engn. B 116 (2005) 30-33.

 

  • 2004
Eliáš, P., Šoltýs, J., Kostič, I., : Formation of micro- and nano-striations at (211)A facets during wet etching of InP in HCl. Superlatt. Microstruct. 36 (2004) 315-323.

 

Písečný, P., Hušeková, K., Fröhlich, K., Harmatha, L., Šoltýs, J., Machajdík, D., Espinos, J., Jergel, M., Jakabovič, J., : Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology. Materials Sci Semicond. Process. 7 (2004) 231-236.

 

Novák, J., Hasenöhrl, S., Kučera, M., Šoltýs, J., : Nano-patterning surfaces by the self-organized growth of ordered and strained epitaxial layers. Superlatt. Microstruct. 36 (2004) 123-131.

 

Gregušová, D., Novák, J., Hardtdegen, H., Šoltýs, J., Kostič, I., Greguš, J., : Smooth GaN recess wet photoelectrochemical etching. In: ASDAM 2004. Eds. J.Osvald and Š.Haščík. Piscataway: IEEE 2004. ISBN 0-7803-8535-7. P. 199-202.

 

Cambel, V., Šoltýs, J., Moško, M., Kúdela, R., : Two-dimensional electron transport through a barrier prepared by tip-induced oxidation. Superlatt. Microstruct. 36 (2004) 359-367.
Eliáš, P., Kostič, I., Šoltýs, J., Hasenöhrl, S., : Wet-etch bulk micromachining of (100) InP substrates. J. Micromech. Microengn. 14 (2004) 1205–1214.

 

  • 2003
Gregušová, D., Cambel, V., Fedor, J., Kúdela, R., Šoltýs, J., Lalinský, T., Kostič, I., Bending, S., : Fabrication of a vector Hall sensor for magnetic microscopy. Applied Phys. Lett. 82 (2003) 3704-3706.

 

Gregušová, D., Cambel, V., Kúdela, R., Šoltýs, J., Kostič, I., Attolini, G., Pelosi, C., : Investigation of the GaAs-pyramids overgrowth using MOCVD. J. Crystal Growth 248 (2003) 417-420.

 

Kúdela, R., Štrichovanec, P., Gregušová, D., Cambel, V., Šoltýs, J., Hasenöhrl, S., Novák, J., Kostič, I., Attolini, G., Pelosi, C., : MOVPE growth of AlGaAs/GaAs and InGaP/GaAs structures on patterned GaAs substrates. In: EW MOVPE X. Univ. Lecce 2003. P. 219.

 

Šoltýs, J., Cambel, V., Fedor, J., : Study of tip-induced Ti-film oxidation in atomic force microscopy contact and non-contact mode Acta Physica Polonica A 103 (2003) 553-558.