Ing. Jaroslav DZUBA, PhD.

  • 2017

Lalinský, T., Vanko, G., Dobročka, E., Osvald, J., Babchenko, O., Dzuba, J., Veselý, M., Vančo, Ľ., Vogrinčič, P., and Vincze, A.: Ir/Al multilayer gates for high temperature operated AlGaN/GaN HEMTs, Phys. Status Solidi A 214 (2017) 1700691.

Zehetner, J., Kasemann, S., Vanko, G., Dzuba, J., Lalinský, T., Nürnberger, S., : Micro structuring of diaphragms for III-N MEMS using short pulsed laser ablation In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 287-290.. (SASPRO 0068/01/01). (APVV 14-0613). (VEGA 2/0150/17).

 

Babchenko, O., Dzuba, J., Lalinský, T., Vojs, M., Vincze, A., Ižák, T., Vanko, G., : Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment,. Applied Surface Sci 395 (2017) 92-97. (SASPRO 0068/01/01). (APVV 0455-12). (CENTE).

 

Lalinský, T., Dzuba, J., Vanko, G., Kutiš, V., Paulech, J., Gálik, G., Držík, M., Chromik, Š., Lobotka, P.:Thermo-mechanical analysis of uncooled La0.67Sr0.33MnO3 microbolometer made on circular SOI membrane. Sensors Actuators A 265 (2017) 321–328. (APVV 14-0613). (APVV 0450-10). (APVV 0455-12). (CENTE II).
  • 2016
Lalinský, T., Vanko, G., Dzuba, J., Kutiš, V., Gálik, G., Paulech, J., Držík, M., Chromik, Š., and Lobotka, P.: Thermo-mechanical analysis of uncooled La0.67Sr0,33MnO3 microbolometer made on circular SOI membrane, Procedia  Engn. 168 (2016) 733-736.

Zehetner, J., Kraus, S., Lucki, M., Vanko, G., Dzuba, J., Lalinský, T., : Manufacturing of membranes by laser ablation in SiC, sapphire, glass and ceramic for GaN/ferroelectric thin film MEMS and pressure sensors. Microsyst. Technol. 22 (2016) 1883-1892. (SK-AT-0019-10). (APVV 0455-12).

 

Zehetner, J., Vanko, G., Dzuba, J., Lalinský, T., Lucki, M., Kraus, S., : Micro structuring of bulk SiC substrates by femtosecond laser ablation. In: Proc. 22th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2016). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2016. ISBN 978-80-227-4572-7. P. 302-305. (SK-AT-0019-10). (APVV 0450-10).

 

Zehetner, J., Vanko, G., Dzuba, J., Lalinský, T., : Nanostructuring of bulk Si and SiC substrates by femtosecond laser ablation for membrane fabrication and surgace functionalization In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 223-226.

 

Babchenko, O., Vanko, G., Dzuba, J., Ižák, T., Vojs, M., Lalinský, T., Kromka, A., : Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition process In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 157-160. (SASPRO 0068/01/01). (APVV 0455-12).

 

Dzuba, J., Vanko, G., Držík, M., Rýger, I., Kutiš, V., Zehetner, J., Lalinský, T., : AlGaN/GaN diaphragm-based pressure sensor with direct high performance piezoelectric transduction mechanism. Applied Phys. Lett. 107 (2015) 122102. (APVV 0455-12). (APVV 0450-10). (VEGA 1/0712/14).

 

Dzuba, J., Vanko, G., Vojs, M., Rýger, I., Ižák, T., Jirásek, V., Kutiš, V., Lalinský, T., : Finite element analysis of AlGaN/GaN micro-diaphragms with diamond Proc. SPIE 9517 (2015) 95171I.

 

Lalinský, T., Vanko, G., Dobročka, E., Vincze, A., Dzuba, J., Babchenko, O., : Ir/Al multilayer systems for high temperature stable gates of AlGaN/GaN HEMTs. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 91-92.. (VEGA 1/0839/12). (APVV 0455-12). (SASPRO 0068/01/01).

 

Zehetner, J., Vanko, G., Dzuba, J., Rýger, I., Lalinský, T., Benkler, M., Lucki, M., : Laser ablation for membrane processing of AlGaN/GaN- and micro structured ferroelectric thin film MEMS and SiC pressure sensors for extreme conditions Proc. SPIE 9517 (2015) 951721.

 

Vanko, G., Dzuba, J., Rýger, I., Vallo, M., Lalinský, T., : MEMS pressure sensor with an AlGaN/GaN based high electron mobility transistor In: NSTI: Advanced Materials – TechConnect Briefs 2015. Eds. B. Romanowicz, M. Laudon. Taylor and Francis: 2015. ISBN: 978-149874730-1. P. 290-293.

 

Babchenko, O., Vojs, M., Dzuba, J., Lalinský, T., Vanko, G., : Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 20-21..(APVV 0455-12). (SASPRO 0068/01/01).

 

Dzuba, J., Držík, M., Ižák, T., Vojs, M., Babchenko, O., Lalinský, T., Kutiš, V., Jirásek, V., Kromka, A., Vanko, G., : Stress analysis in diamond-coated AlGaN/GaN diaphragms for MEMS pressure sensors. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 44.

 

Vanko, G., Vojs, M., Ižák, T., Potocký, P., Choleva, P., Marton, M., Rýger, I., Dzuba, J., Lalinský, T., : AlGaN/GaN micromembranes with diamond coating for high electron mobility transistors operated at high temperatures In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 263-266. (APVV 0455-12). (APVV 0199-10). (VEGA 2/0167/13).

 

Rýger, I., Vanko, G., Lalinský, T., Dzuba, J., Vallo, M., Kunzo, P., Vávra, I., : Enhanced sensitivity of Pt/NiO gate based AlGaN/GaN C-HEMT hydrogen sensor Key Engn. Mater. 605 (2014) 491-494. (APVV 0450-10). (APVV 0199-10). (APVV 0655-07). (VEGA 2/0167/13). (VEGA 1/0839/12).

 

Dzuba, J., Vanko, G., Rýger, I., Vallo, M., Kutiš, V., Lalinský, T., : Influence of temperature on the sensitivity of the AlGaN/GaN C HEMT based piezoelectric pressure sensor In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 5-8.. (APVV 0455-12). (APVV 0450-10).

 

Dzuba, J., Držík, M., Vanko, G., Rýger, I., Vallo, M., Kutiš, V., Lalinský, T., : Modal analysis of Gallium Nitride membrane for pressure sensing device Key Engn. Mater. 605 (2014) 404-407. (APVV 0450-10). (APVV 0199-10). (APVV 0655-07). (VEGA 2/0167/13). (VEGA 1/0839/12).

 

Vanko, G., Dzuba, J., Rýger, I., Lalinský, T., Vojs, M., Vincze, A., Dobročka, E., : Processing technology of MEMS sensors using III-N material system In: 17. škola vákuovej techniky: Analýza materiálov vo vákuu. Material analysis in vacuum. Eds. M. Michalka et al. Bratislava: FEI STU 2014. ISBN 978-80-971179-4-8. P. 39-43. (APVV 0455-12). (APVV 0450-10).

 

Dzuba, J., Vanko, G., Držík, M., Rýger, I., Vallo, M., Lalinský, T., Kutiš, V., Haško, D., Srnánek, R., : The AlGaN/GaN C-HEMT diaphragm-based MEMS pressure sensor for harsh environment In: 17. škola vákuovej techniky: Analýza materiálov vo vákuu. Material analysis in vacuum. Eds. M. Michalka et al. Bratislava: FEI STU 2014. ISBN 978-80-971179-4-8. P. 142-145. (APVV 0455-12). (APVV 0450-10).

 

Zehetner, J., Vanko, G., Choleva, P., Dzuba, J., Rýger, I., Lalinský, T., : Using of laser ablation technique in the processing technology of GaN/SiC based MEMS for extreme conditions In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 259-262.

 

  • 2013
Vanko, G., Lalinský, T., Ižák, T., Vojs, M., Vincze, A., Dobročka, E., Vallo, M., Dzuba, J., Rýger, I., Kromka, A., : AlGaN/GaN high electron mobility transistors for high temperatures In: Perspektívne vákuové metódy a technológie: 16. škola vákuovej techniky. Eds. M. Vojs, M. Veselý. Bratislava: Slov. vákuová spol. 2013. ISBN 978-80-971179-2-4. S. 55-59. (APVV 0455-12). (APVV 0199-10). (VEGA 1/0839/12).

 

Vanko, G., Hudek, P., Dzuba, J., Choleva, P., Kutiš, V., Vallo, M., Rýger, I., Lalinský, T., : Bulk micromachining of SiC substrate for MEMS sensor applications. Microelectron. Engn. 110 (2013) 260-264.(SK-AT-0019-10). (APVV 0450-10). (APVV 0199-10). (VEGA-2-0163-09).

 

Lalinský, T., Vallo, M., Vanko, G., Dobročka, E., Vincze, A., Osvald, J., Rýger, I., Dzuba, J., : Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation. Applied Surface Sci 283 (2013) 160-167. (APVV 0450-10). (APVV 0199-10). (VEGA 1/0839/12).

 

Vanko, G., Hudek, P., Zehetner, J., Dzuba, J., Choleva, P., Vallo, M., Rýger, I., Lalinský, T., : MEMS pressure sensor fabricated by advanced bulk micromachining techniques, Proc. SPIE 8763 (2013) 8763-101.

 

Kutiš, V., Dzuba, J., Paulech, J., Murín, J., Hrabovský, J., Lalinský, T., : Piezoelectric analysis of MEMS pressure sensor. In: Proc. 19th Inter. Conf. on Applied Phys. of Cond. Matter (APCOM 2013). Eds. J. Vajda and I. Jamnický. Bratislava: FEI STU 2013. ISBN 978-80-227-3956-6. P. 225-228. (APVV 0450-10).

 

Vanko, G., Vallo, M., Rýger, I., Dzuba, J., Lalinský, T., : Conductive metal oxide based gates for self aligned technology of AlGaN/GaN HEMT. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 19-22.

 

Rýger, I., Vanko, G., Kunzo, P., Lalinský, T., Dzuba, J., Vallo, M., Satrapinskyy, L., Plecenik, T., Chvála, A., : Gates of AlGaN/GaN HEMT for high temperature gas sensing applications. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 23-26.

 

Kutiš, V., Dzuba, J., Paulech, J., Murín, J., Lalinský, T., : MEMS piezoelectric pressure sensor-modelling and simulation. Procedia Engn. 48 (2012) 338-345. (APVV 0450-10).

 

Lalinský, T., Hudek, P., Vanko, G., Dzuba, J., Kutiš, V., Srnánek, R., Choleva, P., Vallo, M., Držík, M., Matay, L., Kostič, I., : Micromachined membrane structures for pressure sensors based on AlGaN/GaN circular HEMT sensing device. Microelectron. Engn. 98 (2012) 578–581. (APVV 0655-07). (APVV 0450-10). (APVV 0199-10). (VEGA-2-0163-09).

 

Dzuba, J., Lalinský, T., Vanko, G., Vallo, M., Rýger, I., Kutiš, V., Královič, V., : Modeling and simulation of AlGaN/GaN piezoelectric MEMS pressure sensor. In: 13th Mechatronics Forum Inter. Conf. – Mechatronics 2012. Linz 2012. P. 773-778.